JP3405219B2 - Semiconductor acceleration sensor element and method of manufacturing the same - Google Patents
Semiconductor acceleration sensor element and method of manufacturing the sameInfo
- Publication number
- JP3405219B2 JP3405219B2 JP24061098A JP24061098A JP3405219B2 JP 3405219 B2 JP3405219 B2 JP 3405219B2 JP 24061098 A JP24061098 A JP 24061098A JP 24061098 A JP24061098 A JP 24061098A JP 3405219 B2 JP3405219 B2 JP 3405219B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- frame
- sensor element
- notch
- acceleration sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 85
- 230000001133 acceleration Effects 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000005452 bending Methods 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 238000000407 epitaxy Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 17
- 230000035882 stress Effects 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
- G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
Landscapes
- Pressure Sensors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、自動車、航空機、
家電製品等に用いられる半導体加速度センサ素子及びそ
の製造方法に関するものであり、特にｘ軸、ｙ軸、ｚ軸
に感度を有する３軸加速度センサ素子に関するものであ
る。TECHNICAL FIELD The present invention relates to an automobile, an aircraft,
The present invention relates to a semiconductor acceleration sensor element used for home electric appliances and the like and a manufacturing method thereof, and more particularly to a triaxial acceleration sensor element having sensitivity in x-axis, y-axis and z-axis.
【０００２】[0002]
【従来の技術】一般に加速度センサとしては、片持ち梁
方式と両持ち梁方式とが提案されている。検出方法とし
ては、機械的な歪みを電気抵抗の変化として検出する方
法と、静電容量の変化による検出方法とがある。例え
ば、特開平6-109755号公報には機械的な歪みを電気抵抗
の変化として検出する両持ち梁方式の加速度センサが開
示され、このような加速度センサの製造方法が特開平9-
289327号公報に開示されている。2. Description of the Related Art Generally, a cantilever type and a double-supported beam type have been proposed as acceleration sensors. As a detection method, there are a method of detecting mechanical strain as a change in electric resistance and a detection method by a change in capacitance. For example, Japanese Unexamined Patent Publication No. 6-109755 discloses a double-ended beam type acceleration sensor that detects mechanical strain as a change in electrical resistance.
It is disclosed in Japanese Patent No. 289327.
【０００３】図８は、従来例に係る半導体加速度センサ
の製造工程を示す概略断面図であり、図９は、上図に係
る半導体加速度センサの上面から見た状態を示す概略平
面図である。先ず、ｎ型の単結晶シリコン基板９の一主
表面上に熱酸化等によりシリコン酸化膜１３を形成し、
所定形状にパタ−ニングされたレジストマスク（図示せ
ず）を用いてシリコン酸化膜１３のエッチングを行うこ
とにより開口部１３ａを形成し、プラズマアッシング等
によりレジストマスクを除去する。このとき、開口部１
３ａは単結晶シリコン基板９の略四角状の中央部９ａを
外囲した箇所に形成されている。FIG. 8 is a schematic sectional view showing a manufacturing process of a semiconductor acceleration sensor according to a conventional example, and FIG. 9 is a schematic plan view showing a state of the semiconductor acceleration sensor according to the upper view as seen from above. First, a silicon oxide film 13 is formed on one main surface of the n-type single crystal silicon substrate 9 by thermal oxidation or the like,
The opening 13a is formed by etching the silicon oxide film 13 using a resist mask (not shown) patterned into a predetermined shape, and the resist mask is removed by plasma ashing or the like. At this time, the opening 1
3a is formed at a location surrounding a substantially square central portion 9a of the single crystal silicon substrate 9.
【０００４】続いて、開口部１３ａが形成されたシリコ
ン酸化膜１３をマスクとしてボロン（B）等のｐ型不純
物をイオン注入、アニ−ル処理を行うことによりｐ＋型
埋込犠牲層１０を形成し（図８（ａ））、シリコン酸化
膜１３をエッチングにより除去する。Then, a p + type buried sacrificial layer 10 is formed by ion-implanting p-type impurities such as boron (B) and annealing using the silicon oxide film 13 having the opening 13a as a mask. Then, the silicon oxide film 13 is removed by etching (FIG. 8A).
【０００５】次に、単結晶シリコン基板９の一主表面上
にｎ型のエピタキシャル層１１を形成し、エピタキシャ
ル層１１に、後述する梁部２ｂを挟んで略対向し、か
つ、中央部２ａの近傍が欠落した矩形状にレジストマス
ク（図示せず）を用いてボロン（B）等のｐ型不純物を
イオン注入及びアニ−ル処理を行うことによりｐ＋型埋
込犠牲層１０に到達するｐ＋型不純物層（図示せず）を
形成し、レジストマスクを除去する（図８（ｂ））。こ
こで、エピタキシャル層１１は、後に撓み部２となるた
め、加速度印加時に撓む厚さに形成されている。Next, an n-type epitaxial layer 11 is formed on one main surface of the single crystal silicon substrate 9, and the n-type epitaxial layer 11 is substantially opposed to the epitaxial layer 11 with a beam portion 2b, which will be described later, interposed therebetween, and the central portion 2a. A p + type that reaches the p + type buried sacrificial layer 10 by ion-implanting p-type impurities such as boron (B) and an annealing process using a resist mask (not shown) in a rectangular shape lacking the vicinity An impurity layer (not shown) is formed and the resist mask is removed (FIG. 8B). Here, since the epitaxial layer 11 will be the bending portion 2 later, it is formed to have a thickness that bends when acceleration is applied.
【０００６】次に、エピタキシャル層１１の撓み部２に
対応する箇所に、ボロン（B）等のｐ型不純物を拡散し
てピエゾ抵抗１４を形成し（図８（ｃ））、ピエゾ抵抗
１４と電気的に接続されるようにエピタキシャル層１１
内にボロン（B）等のｐ型不純物を拡散して拡散配線１
５を形成する（図８（ｄ））。Next, a p-type impurity such as boron (B) is diffused to form a piezoresistor 14 at a portion of the epitaxial layer 11 corresponding to the bending portion 2 (FIG. 8 (c)). Epitaxial layer 11 so as to be electrically connected
Diffusion wiring 1 by diffusing p-type impurities such as boron (B) inside
5 is formed (FIG. 8D).
【０００７】次に、単結晶シリコン基板９の二主表面上
及びエピタキシャル層１１のピエゾ抵抗１４形成面上に
CVD法等によりシリコン窒化膜等の保護膜１６を形成
し、所定形状にパタ−ニングされたレジストマスク（図
示せず）を用いて単結晶シリコン基板９の二主表面上に
形成された保護膜１６のエッチングを行うことにより、
後述する重り部３の外周縁に対応する箇所に開口部１６
ａを形成し、レジストマスクを除去する（図８
（ｅ））。Next, on the two main surfaces of the single crystal silicon substrate 9 and on the surface of the epitaxial layer 11 on which the piezoresistor 14 is formed.
A protective film 16 such as a silicon nitride film is formed by a CVD method or the like, and a protective film formed on the two main surfaces of the single crystal silicon substrate 9 using a resist mask (not shown) patterned in a predetermined shape. By performing 16 etching,
The opening 16 is provided at a location corresponding to the outer peripheral edge of the weight portion 3 described later.
a is formed and the resist mask is removed (see FIG. 8).
(E)).
【０００８】次に、開口部１６ａが形成された保護膜１
６をマスクとして単結晶シリコン基板９を、水酸化カリ
ウム（KOH）溶液等のアルカリ系のエッチャントを用い
て異方性エッチングを行うことにより、ｐ＋型埋込犠牲
層１０に到達する切り込み部５を形成する（図８
（ｆ））。Next, the protective film 1 in which the opening 16a is formed
6 is used as a mask to anisotropically etch the single crystal silicon substrate 9 using an alkaline etchant such as a potassium hydroxide (KOH) solution to form the cut portion 5 reaching the p + -type buried sacrificial layer 10. Form (Fig. 8
(F)).
【０００９】次に、拡散配線１５上の所望の箇所の保護
膜１６をエッチングにより除去し、拡散配線１５と電気
的に接続されるように、スパッタリング及びエッチング
等によりメタル配線１７を形成する（図８（ｇ））。Next, the protective film 16 at a desired position on the diffusion wiring 15 is removed by etching, and a metal wiring 17 is formed by sputtering and etching so as to be electrically connected to the diffusion wiring 15 (see FIG. 8 (g)).
【００１０】次に、フッ酸等を含んだ酸性溶液から成る
エッチャントを切り込み部５に導入し、ｐ＋型埋込犠牲
層１０及びｐ＋型不純物層を等方性エッチングにより除
去して切り込み溝４を形成し、エピタキシャル層１１の
所望の箇所に撓み部２に撓みが集中するようにスリット
１２をRIE(Reactive Ion Etching)等により形成するこ
とにより、重り部３と、エピタキシャル層１１から成る
フレーム１と、フレーム１の下面側を支持する支持部材
６と、中央部２ａと梁部２ｂとを有し、中央部２ａには
重り部３のネック部３ａが接続され、梁部２ｂが中央部
２ａの外周縁から四方に延在し、フレーム１の内周縁に
接続された十字形状の撓み部２とを形成する（図８
（ｈ））。Next, an etchant made of an acidic solution containing hydrofluoric acid or the like is introduced into the cut portion 5, and the p + type buried sacrificial layer 10 and the p + type impurity layer are removed by isotropic etching to form the cut groove 4. By forming the slit 12 by RIE (Reactive Ion Etching) or the like so that the bending is concentrated on the bending portion 2 at a desired position of the epitaxial layer 11, the weight portion 3 and the frame 1 including the epitaxial layer 11 are formed. , A support member 6 for supporting the lower surface side of the frame 1, a central portion 2a and a beam portion 2b, the neck portion 3a of the weight portion 3 is connected to the central portion 2a, the beam portion 2b of the central portion 2a A cross-shaped bending portion 2 extending from the outer peripheral edge in all directions and connected to the inner peripheral edge of the frame 1 is formed (FIG. 8).
(H)).
【００１１】そして、重り部３に対応する箇所に凹部を
有する上部ストッパ（図示せず）がフレーム１に接合さ
れ、重り部３に対応する箇所に凹部を有する下部ストッ
パ（図示せず）が支持部材６に接合されている。An upper stopper (not shown) having a recess at a position corresponding to the weight 3 is joined to the frame 1, and a lower stopper (not shown) having a recess at a position corresponding to the weight 3 is supported. It is joined to the member 6.
【００１２】この半導体加速度センサは、重り部３に加
速度が印加されると、重り部３が加速度の印加方向と反
対方向に変位して撓み部２が撓み、その撓み部２の一面
に形成されたピエゾ抵抗１４が撓んで、ピエゾ抵抗１４
の抵抗値が変化する。この抵抗値の変化を電気信号に変
換して加速度を検出する。In this semiconductor acceleration sensor, when acceleration is applied to the weight portion 3, the weight portion 3 is displaced in the direction opposite to the direction of application of the acceleration to bend the bending portion 2, and the bending portion 2 is formed on one surface of the bending portion 2. The piezoresistor 14 bends and the piezoresistor 14
The resistance value of changes. The acceleration is detected by converting the change in the resistance value into an electric signal.
【００１３】[0013]
【発明が解決しようとする課題】上述のような十字形状
の撓み部２を有する構造の半導体加速度センサにおいて
は、センサチップに内在する残留応力は構造上変形しや
すい部分、即ち撓み部２に集中する。In the semiconductor acceleration sensor having the structure having the cross-shaped bending portion 2 as described above, the residual stress existing in the sensor chip is concentrated in the portion easily deformed structurally, that is, the bending portion 2. To do.
【００１４】この残留応力の発生原因には、上部ストッ
パ及び下部ストッパからの熱ストレス等が考えられる。
上部ストッパ及び下部ストッパの材料としては、センサ
材料（シリコン）との接合の容易性からガラスを用いる
ことが多い。この場合、シリコンとガラスの熱膨張係数
が異なるため、接合後、センサチップに熱応力による残
留応力が残り、チップ、特に最も応力の影響を受けやす
い撓み部２に反りが発生する。この反りにより、センサ
の特性はオフセット電圧が大きくずれる等の悪影響を受
け、特性ばらつきの原因にもなる。The cause of this residual stress is considered to be thermal stress from the upper stopper and the lower stopper.
As the material of the upper stopper and the lower stopper, glass is often used because it is easily bonded to the sensor material (silicon). In this case, since the thermal expansion coefficient of silicon is different from that of glass, residual stress due to thermal stress remains in the sensor chip after bonding, and warpage occurs in the chip, especially in the flexible portion 2 that is most susceptible to stress. Due to this warpage, the characteristics of the sensor are adversely affected such that the offset voltage is largely deviated, and this also causes variations in characteristics.
【００１５】また、その反り量は温度によっても変化す
るため、感度やオフセット電圧が温度によって大きく変
動する等、温度特性が悪くなるといった問題もある。ま
た、パッケージ等のセンサチップ外部からの応力によっ
ても同様の問題が発生する。Further, since the amount of warp also changes depending on the temperature, there is a problem that the temperature characteristics are deteriorated such that the sensitivity and the offset voltage largely change depending on the temperature. A similar problem also occurs due to stress from the outside of the sensor chip such as a package.
【００１６】残留応力が撓み部２の長手方向に引っ張り
応力として発生した場合、撓み部２は撓みにくくなり、
感度劣化を招く。長手方向に圧縮応力が発生した場合、
撓み部２が十字形状に構成されているので、同一直線上
にある梁部２ｂは応力の逃げ場がなくなり、大きな圧縮
力で座屈現象が起こり、撓み部２が撓まなくなって、同
じく感度劣化を招く。When the residual stress is generated as a tensile stress in the longitudinal direction of the bending portion 2, the bending portion 2 becomes difficult to bend,
This causes sensitivity deterioration. When compressive stress is generated in the longitudinal direction,
Since the bending portion 2 is formed in a cross shape, the beam portion 2b on the same straight line has no escape area for the stress, and a large compressive force causes a buckling phenomenon, so that the bending portion 2 does not bend and the sensitivity is also deteriorated. Invite.
【００１７】本発明は、上記の点に鑑みて成されたもの
であり、その目的とするところは、センサチップへの外
部からの熱ストレスを緩和し、温度特性に優れ、高性能
な半導体加速度センサ素子及びその製造方法を提供する
ことにある。The present invention has been made in view of the above points, and an object of the present invention is to reduce the thermal stress from the outside to the sensor chip, have excellent temperature characteristics, and achieve high-performance semiconductor acceleration. A sensor element and a manufacturing method thereof are provided.
【００１８】[0018]
【課題を解決するための手段】請求項１記載の発明は、
中央部と該中央部から延在する梁部とを有する撓み部
と、該撓み部を支持するフレームと、前記中央部にネッ
ク部を介して連結される重り部と、前記梁部と前記重り
部の間の所定位置に設けられた切り込み溝と、該重り部
を切り込み部を介して包囲するとともに前記フレームの
一面側を支持する支持部材とを有し、前記切り込み部が
前記切り込み溝に連通して成る半導体加速度センサ素子
において、前記梁部に折り曲げ部を複数設けるととも
に、前記撓み部を該撓み部形成面に対して回転対称とな
るように構成したことを特徴とするものである。The invention according to claim 1 is
A flexible portion having a central portion and a beam portion extending from the central portion, a frame supporting the flexible portion, a weight portion connected to the central portion via a neck portion, the beam portion and the weight. A notch groove provided at a predetermined position between the parts, and a supporting member that surrounds the weight part through the notch part and supports one surface side of the frame, and the notch part communicates with the notch groove. In the semiconductor acceleration sensor element having the above structure, a plurality of bent portions are provided on the beam portion, and the bending portion is configured to be rotationally symmetrical with respect to the bending portion forming surface.
【００１９】請求項２記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材とを有し、前記切り込み部が前記切り込み溝に連
通して成る半導体加速度センサ素子において、前記梁部
に折り曲げ部を設け、前記梁部の所望の箇所を平行する
複数の梁部で構成するとともに、前記撓み部を該撓み部
形成面に対して回転対称となるように構成したことを特
徴とするものである。According to a second aspect of the present invention, the central portion and the central portion
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
A holding member, and the cutout portion is connected to the cutout groove.
In the semiconductor acceleration sensor element formed by passing through the beam part,
Only set the in fold bent portion, parallel to the desired position of the beam portion
It is composed of a plurality of beam portions, and the bending portion is provided with the bending portion.
It is characterized in that it is configured to be rotationally symmetric with respect to the forming surface .
【００２０】請求項３記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材とを有し、前記切り込み部が前記切り込み溝に連
通して成る半導体加速度センサ素子において、前記梁部
に折り曲げ部を設け、前記梁部の所望の箇所を分岐する
とともに、前記撓み部を該撓み部形成面に対して回転対
称となるように構成したことを特徴とするものである。According to a third aspect of the invention, the central portion and the central portion
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
A holding member, and the cutout portion is connected to the cutout groove.
In the semiconductor acceleration sensor element formed by passing through the beam part,
A bent portion is provided on the beam, and a desired portion of the beam portion is branched.
At the same time, the bending portion is rotated with respect to the bending portion forming surface.
It is characterized in that it is configured as a name .
【００２１】請求項４記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材とを有し、前記切り込み部が前記切り込み溝に連
通して成る半導体加速度センサ素子において、前記梁部
に折り曲げ部を設け、前記梁部を薄肉部と厚肉部とで構
成するとともに、前記撓み部を該撓み部形成面に対して
回転対称となるように構成したことを特徴とするもので
ある。The invention according to claim 4 is the central portion and the central portion.
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
A holding member, and the cutout portion is connected to the cutout groove.
In the semiconductor acceleration sensor element formed by passing through the beam part,
A bent portion is provided at the bottom, and the beam portion is composed of a thin portion and a thick portion.
And the bending portion with respect to the bending portion forming surface.
It is characterized by being configured to have rotational symmetry .
【００２２】請求項５記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材とを有し、前記切り込み部が前記切り込み溝に連
通して成る半導体加速度センサ素子において、前記梁部
に折り曲げ部を設け、前記折り曲げ部、前記中央部と前
記梁部との連結部、前記梁部と前記フレームとの連結部
及び前記中央部と前記ネック部との連結部に丸みを持た
せるとともに、前記撓み部を該撓み部形成面に対して回
転対称となるように構成したことを特徴とするものであ
る。According to a fifth aspect of the invention, the central portion and the central portion
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
A holding member, and the cutout portion is connected to the cutout groove.
In the semiconductor acceleration sensor element formed by passing through the beam part,
A bent portion is provided at the bent portion, the central portion and the front.
Connecting part with beam part, connecting part with the beam part and the frame
And a rounded connecting portion between the central portion and the neck portion
And the bending portion is rotated with respect to the bending portion forming surface.
It is characterized by being configured to be axisymmetric .
【００２３】請求項６記載の発明は、請求項１乃至請求
項５のいずれかに記載の半導体加速度センサ素子の製造
方法であって、前記ネック部、前記重り部及び前記支持
部材が半導体基板を用いて形成され、前記フレーム及び
前記撓み部が前記半導体基板上に形成されたエピタキシ
ャル層を用いて形成されたことを特徴とするものであ
る。According to a sixth aspect of the present invention, the semiconductor acceleration sensor element according to any one of the first to fifth aspects is manufactured.
A method comprising the neck portion, the weight portion and the support
The member is formed using a semiconductor substrate, the frame and
An epitaxy in which the flexure is formed on the semiconductor substrate.
It is characterized in that it is formed by using a thin layer .
【００２４】請求項７記載の発明は、請求項４記載の半
導体加速度センサ素子の製造方法であって、前記ネック
部、前記重り部及び前記支持部材が半導体基板を用いて
形成され、前記フレーム及び前記中央部及び前記梁部の
薄肉部が前記半導体基板上に形成されたエピタキシャル
層を用いて形成され、前記梁部の厚肉部が前記半導体基
板及び前記エピタキシャル層を用いて形成されたことを
特徴とするものである。The invention according to claim 7 is the method for manufacturing a semiconductor acceleration sensor element according to claim 4 , wherein the neck portion, the weight portion and the supporting member are formed by using a semiconductor substrate, and the frame and Of the central portion and the beam portion
The thin portion is formed by using the epitaxial layer formed on the semiconductor substrate, and the thick portion of the beam portion is the semiconductor substrate.
It is characterized by being formed using a plate and the epitaxial layer .
【００２５】請求項８記載の発明は、請求項６または請
求項７記載の半導体加速度センサ素子の製造方法であっ
て、前記切り込み溝が前記半導体基板の一主表面に形成
された高濃度不純物層をエッチング除去することにより
形成されたことを特徴とするものである。The invention according to claim 8 is the invention according to claim 6 or the contract.
A method of manufacturing a semiconductor acceleration sensor element according to claim 7 , wherein the cut groove is formed on one main surface of the semiconductor substrate.
The high-concentration impurity layer thus formed is removed by etching .
【００２６】請求項９記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材と、前記撓み部の一面側所定位置に設けられたピ
エゾ抵抗とを有し、前記切り込み部が前記切り込み溝に
連通して成る半導体加速度センサ素子において、前記梁
部に折り曲げ部を設けるとともに、前記撓み部を該撓み
部形成面に対して回転対称となるように構成したことを
特徴とするものである。The invention according to claim 9 is the central portion and the central portion.
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
The holding member and a pin provided at a predetermined position on one surface side of the bending portion.
Ezo resistance, and the cut portion is in the cut groove.
In the semiconductor acceleration sensor element formed in communication , the beam
The bent portion is provided to the bending portion, and the bending portion is
It is characterized in that it is configured so as to be rotationally symmetrical with respect to the part forming surface .
【００２７】[0027]
【発明の実施の形態】以下、本発明の一実施の形態につ
いて図面に基づき説明する。図１は、本発明の一実施の
形態に係る半導体加速度センサ素子を示す概略構成図で
あり、（ａ）は概略平面図であり、（ｂ）は（ａ）のＡ
−Ａ’での概略断面図であり、（ｃ）は（ａ）のＢ−
Ｂ’での概略断面図である。本実施の形態に係る半導体
加速度センサ素子は、枠状のフレーム１と、中央部２ａ
と梁部２ｂとを有する撓み部２と、重り部３と、支持部
材４とを有する。撓み部２は、略四角状の中央部２ａの
外周縁から四方に延在し、中央部２ａの中心に対して略
卍形状となるように梁部２ｂが設けられている。梁部２
ｂは、第一梁部２ｂ１と第二梁部２ｂ２とを有し、第一
梁部２ｂ１の一端は中央部２ａに連結され、他端は第二
梁部２ｂ２の一端に所定の角度αを成して（折り曲げ部
７ａ）連結され、第二梁部２ｂ２の他端はフレーム１の
内周縁に連結されている。従って、撓み部２は、撓み部
２形成面に対して回転対称に構成される。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a semiconductor acceleration sensor element according to an embodiment of the present invention, (a) is a schematic plan view, and (b) is A of (a).
It is a schematic sectional drawing in -A ', (c) is B- of (a).
It is a schematic sectional drawing in B '. The semiconductor acceleration sensor element according to the present embodiment has a frame-shaped frame 1 and a central portion 2a.
The flexible portion 2 having the beam portion 2b, the weight portion 3, and the support member 4 are provided. The bending portion 2 extends in four directions from the outer peripheral edge of the substantially square-shaped central portion 2a, and a beam portion 2b is provided so as to have a substantially swastika shape with respect to the center of the central portion 2a. Beam 2
b has a first beam portion 2b1 and a second beam portion 2b2, one end of the first beam portion 2b1 is connected to the central portion 2a, and the other end forms a predetermined angle α with one end of the second beam portion 2b2. The second beam portion 2b2 is connected to the inner peripheral edge of the frame 1 by being formed (folded portion 7a). Therefore, the flexible portion 2 is configured to be rotationally symmetrical with respect to the surface on which the flexible portion 2 is formed.
【００２８】なお、第一梁部２ｂ１は、中央部２ａから
半導体加速度センサ素子の撓み部２形成面の中心線上に
延在して設けられている。これにより、中央部２ａ及び
第一梁部２ｂ１は十字形状となる。The first beam portion 2b1 is provided so as to extend from the central portion 2a to the center line of the surface where the flexible portion 2 of the semiconductor acceleration sensor element is formed. As a result, the central portion 2a and the first beam portion 2b1 have a cross shape.
【００２９】中央部２ａにはネック部３ａを介して重り
部３が連結されている。これにより、重り部３と梁部２
ｂとの間には切り込み溝４が構成される。また、重り部
３を切り込み部５を介して包囲するとともに、フレーム
１の下面側を支持するように支持部材６が設けられてい
る。A weight portion 3 is connected to the central portion 2a via a neck portion 3a. Thereby, the weight portion 3 and the beam portion 2
A cut groove 4 is formed between the groove and b. A support member 6 is provided so as to surround the weight portion 3 via the notch portion 5 and support the lower surface side of the frame 1.
【００３０】なお、切り込み部５は切り込み溝４に連通
するように構成されている。また、本実施の形態におい
ては、重り部３及び支持部材６として半導体基板である
単結晶シリコン基板を用い、フレーム１及び撓み部２と
して半導体基板上に形成したエピタキシャル層を用い
た。The cut portion 5 is constructed so as to communicate with the cut groove 4. Further, in the present embodiment, a single crystal silicon substrate which is a semiconductor substrate is used as the weight portion 3 and the supporting member 6, and an epitaxial layer formed on the semiconductor substrate is used as the frame 1 and the bending portion 2.
【００３１】また、撓み部２の一面側所定位置にはピエ
ゾ抵抗（図示せず）及び拡散配線（図示せず）が設けら
れ、拡散配線と電気的に接続されるようにメタル配線
（図示せず）が設けられている。Further, a piezoresistor (not shown) and a diffusion wiring (not shown) are provided at a predetermined position on one surface side of the bending portion 2, and a metal wiring (not shown) is electrically connected to the diffusion wiring. No) is provided.
【００３２】従って、本実施の形態においては、撓み部
２の梁部２ｂに折り曲げ部７ａを設けて、撓み部２形成
面に対して回転対称となるように撓み部２を構成したの
で、外力からの残留応力による撓み部２の反りが解消さ
れ、感度，オフセット電圧等の温度による変動を抑制す
ることができ、良好で安定した特性を得ることができ
る。Therefore, in this embodiment, since the bending portion 7a is provided on the beam portion 2b of the bending portion 2 and the bending portion 2 is configured to be rotationally symmetric with respect to the surface on which the bending portion 2 is formed, the external force is applied. The warp of the bending portion 2 due to the residual stress due to is eliminated, fluctuations in sensitivity, offset voltage and the like due to temperature can be suppressed, and good and stable characteristics can be obtained.
【００３３】なお、本実施の形態においては、重り部３
の上面にエピタキシャル層を残して、半導体基板とエピ
タキシャル層とで重り部３を構成しているが、これに限
定されるものではなく、重り部３を半導体基板のみで構
成してもよい。但し、重り部３の体積を増すことによ
り、重さを増して感度を向上させることができる。In this embodiment, the weight portion 3
Although the epitaxial layer is left on the upper surface of the semiconductor substrate and the epitaxial layer to form the weight portion 3, the weight portion 3 is not limited to this, and the weight portion 3 may be formed of only the semiconductor substrate. However, by increasing the volume of the weight portion 3, it is possible to increase the weight and improve the sensitivity.
【００３４】また、本実施の形態においては、撓み部２
の梁部２ｂを、第一梁部２ｂ１及び第二梁部２ｂ２とで
１つの折り曲げ部７ａを有して構成して、略卍形状で、
かつ、回転対称にしたが、これに限定されるものではな
く、梁部２ｂに折り曲げ部７ａを複数箇所設けるととも
に、撓み部２形成面に対して回転対称となるように撓み
部２を構成しても良く、例えば、図２に示すように、図
１に示す第二梁部２ｂ２とフレーム１の内周縁との間に
第三梁部２ｂ３を介在させ、第二梁部２ｂ２と第三梁部
２ｂ３とを所定の角度βを成して（折り曲げ部７ｂ）連
結させた構成としても良い。Further, in the present embodiment, the bending portion 2
The beam portion 2b of 1 is composed of the first beam portion 2b1 and the second beam portion 2b2 and has a single bent portion 7a.
Moreover, although it is made to be rotationally symmetric, the present invention is not limited to this. The beam 2b is provided with a plurality of bent portions 7a, and the flexible portion 2 is configured to be rotationally symmetrical with respect to the surface on which the flexible portion 2 is formed. For example, as shown in FIG. 2, the third beam portion 2b3 may be interposed between the second beam portion 2b2 and the inner peripheral edge of the frame 1 shown in FIG. A configuration may be adopted in which the portion 2b3 and the portion 2b3 are connected at an angle β (folded portion 7b).
【００３５】また、図３に示すように、図１に示す第二
梁部２ｂ２を枝分かれ（枝分かれ部８）させて、複数に
分岐させた構成としても良い。Further, as shown in FIG. 3, the second beam portion 2b2 shown in FIG. 1 may be branched (branching portion 8) to be branched into a plurality of parts.
【００３６】また、図４に示すように、図１に示す第一
梁部２ｂ１の代わりに、複数に分岐された第四梁部２ｂ
４を用いた構成としても良い。Further, as shown in FIG. 4, instead of the first beam portion 2b1 shown in FIG. 1, a plurality of fourth beam portions 2b are branched.
4 may be used.
【００３７】ここで、梁部２ｂの形状としては、上記形
状に限定されるものではなく、所望の箇所が分岐された
り、折り曲げられていても良く、即ち、少なくとも１つ
の折り曲げ部が設けられ、撓み部２形成面に対して回転
対称となるように撓み部２が構成されていれば良い。Here, the shape of the beam portion 2b is not limited to the above-mentioned shape, and a desired portion may be branched or bent, that is, at least one bent portion is provided, It suffices that the bending portion 2 be configured so as to be rotationally symmetrical with respect to the surface on which the bending portion 2 is formed.
【００３８】また、重り部３の形状としては、図１乃至
図４に示す形状に限定されるものではなく、フレーム１
及び支持部材６で囲まれる範囲内においてできる限り大
きな形状とすることにより質量を増して感度を向上させ
ることができ、例えば、図５に示すように、上面から見
た形状を略卍形状として、撓み部２形成面に対して回転
対称となるように構成しても良い。Further, the shape of the weight portion 3 is not limited to the shape shown in FIGS.
By increasing the mass as much as possible within the range surrounded by the support member 6, the mass can be increased to improve the sensitivity. For example, as shown in FIG. It may be configured to be rotationally symmetric with respect to the surface on which the flexible portion 2 is formed.
【００３９】また、図１乃至図５においては撓み部２の
厚さを一定としたが、これに限定されるものではなく、
例えばフレーム１の内周縁近傍の撓み部２の厚さを厚く
するようにすれば、更に外力からの残留応力による撓み
部２の反りが解消され、感度，オフセット電圧等の温度
による変動を抑制することができ、良好で安定した特性
を得ることがで｀きる。Although the thickness of the bending portion 2 is constant in FIGS. 1 to 5, it is not limited to this.
For example, if the thickness of the bending portion 2 near the inner peripheral edge of the frame 1 is made thicker, the warping of the bending portion 2 due to the residual stress from the external force is further eliminated, and fluctuations in sensitivity, offset voltage, etc. due to temperature are suppressed. It is possible to obtain good and stable characteristics.
【００４０】また、撓み部２の折り曲げ部，枝分かれ
部，フレーム１の内周縁との連結部，重り部３との連結
部及び中央部２ａと梁部２ｂとの連結部に丸み（アール
形状）を持たせるようにすれば、更に外力、例えば衝撃
や振動等による破壊を防止することができる。Further, the bent portion of the flexible portion 2, the branched portion, the connecting portion with the inner peripheral edge of the frame 1, the connecting portion with the weight portion 3 and the connecting portion between the central portion 2a and the beam portion 2b are rounded (rounded). With the inclusion of the, it is possible to further prevent breakage due to external force, such as impact or vibration.
【００４１】ここで、図１乃至図５に示す半導体加速度
センサ素子を用いて加速度を検出するためには、加速度
検出手段を設ける必要がある。加速度検出手段として
は、例えば、撓み部２の撓みにより抵抗値が変化するピ
エゾ抵抗を用い、該ピエゾ抵抗の抵抗値の変化を電気信
号に変換して加速度を検出する方法や、対向配置された
電極を用い、撓み部２の撓みによる前記電極間の静電容
量の変化を用いて加速度を検出する方法がある。Here, in order to detect the acceleration using the semiconductor acceleration sensor element shown in FIGS. 1 to 5, it is necessary to provide acceleration detecting means. As the acceleration detecting means, for example, a piezoresistor whose resistance value changes due to the bending of the bending portion 2 is used, and a change in the resistance value of the piezoresistor is converted into an electric signal to detect the acceleration, or the piezoresistor is arranged oppositely. There is a method of detecting acceleration by using electrodes and using a change in capacitance between the electrodes due to bending of the bending portion 2.
【００４２】以下において、本実施の形態に係る半導体
加速度センサの製造工程について説明する。なお、説明
の便宜上、図１に示す半導体加速度センサの製造工程に
ついて説明するが、図２乃至図５に示す半導体加速度セ
ンサの製造工程についても略同様である。図６は、本発
明の一実施の形態に係る半導体加速度センサの製造工程
を示す概略断面図である。なお、図６は、図１における
Ｂ−Ｂ’断面での製造工程を示している。The manufacturing process of the semiconductor acceleration sensor according to this embodiment will be described below. For convenience of description, the manufacturing process of the semiconductor acceleration sensor shown in FIG. 1 will be described, but the manufacturing process of the semiconductor acceleration sensor shown in FIGS. 2 to 5 is substantially the same. FIG. 6 is a schematic cross-sectional view showing the manufacturing process of the semiconductor acceleration sensor according to the embodiment of the present invention. Note that FIG. 6 shows a manufacturing process on a BB ′ cross section in FIG. 1.
【００４３】本実施の形態に係る半導体加速度センサ
は、厚さ400〜600μｍのｎ型の半導体基板である単結晶
シリコン基板９の一主表面上に熱酸化等によりシリコン
酸化膜（図示せず）を形成し、所定形状にパターニング
されたレジストマスク（図示せず）を用いてシリコン酸
化膜のエッチングを行うことにより開口部を形成し、プ
ラズマアッシング等によりレジストマスクを除去する。
このとき、開口部は単結晶シリコン基板９の略四角状の
中央部９ａを外囲した箇所に形成されている。なお、中
央部９ａの形状は、特に限定されず、例えば円形，楕円
形，矩形（長方形，正方形）であって良い。The semiconductor acceleration sensor according to the present embodiment has a silicon oxide film (not shown) formed on one main surface of a single crystal silicon substrate 9 which is an n-type semiconductor substrate having a thickness of 400 to 600 μm by thermal oxidation or the like. Are formed, an opening is formed by etching the silicon oxide film using a resist mask (not shown) patterned in a predetermined shape, and the resist mask is removed by plasma ashing or the like.
At this time, the opening is formed at a location surrounding the substantially square central portion 9a of the single crystal silicon substrate 9. The shape of the central portion 9a is not particularly limited, and may be, for example, a circle, an ellipse, or a rectangle (rectangle, square).
【００４４】続いて、開口部が形成されたシリコン酸化
膜をマスクとしてボロン（B）等のｐ型不純物のデポジ
ション及び熱拡散またはイオン注入及びアニール処理を
行うことにより高濃度不純物層であるｐ＋型埋込犠牲層
１０を形成し（図１（ａ））、シリコン酸化膜をエッチ
ングにより除去する（図６（ａ））。ここで、ｐ＋型埋
込犠牲層１０の不純物濃度としては、1019cm-3以上であ
ることが望ましい。Subsequently, by using the silicon oxide film having the openings formed therein as a mask, deposition and thermal diffusion of p-type impurities such as boron (B) or ion implantation and annealing treatment are performed to form p + which is a high concentration impurity layer. The mold embedding sacrificial layer 10 is formed (FIG. 1A), and the silicon oxide film is removed by etching (FIG. 6A). Here, the impurity concentration of the p + type buried sacrificial layer 10 is preferably 10 19 cm −3 or more.
【００４５】なお、本実施の形態においては、開口部が
形成されたシリコン酸化膜をマスクとしてｐ＋型埋込犠
牲層１０を形成するようにしたが、シリコン窒化膜をマ
スクとして用いても良い。In this embodiment, the p + type buried sacrificial layer 10 is formed by using the silicon oxide film having the openings as a mask, but the silicon nitride film may be used as a mask.
【００４６】また、ｐ＋型埋込犠牲層１０を単結晶シリ
コン基板９に形成するようにしたが、リン（P）等のｎ
型不純物をデポジション及び熱拡散またはイオン注入及
びアニール処理を行うことによりｎ＋型埋込犠牲層を形
成するようにしても良い。Although the p + type buried sacrificial layer 10 is formed on the single crystal silicon substrate 9, n such as phosphorus (P) is used.
The n + type buried sacrificial layer may be formed by performing deposition and thermal diffusion of type impurities or ion implantation and annealing.
【００４７】また、ｐ＋型埋込犠牲層１０は、中央部９
ａの外縁の全体から延びてその部分を完全に包囲するよ
うになっていても、あるいは外縁の一部分から延びても
良い。全体から延びる場合は、ｐ＋型埋込犠牲層１０は
環状形態であって良く、例えば中央部９ａが円形であ
り、ｐ＋型埋込犠牲層１０がそれと同心の円により形成
される同心円と中央部９ａとの間の環状部分であった
り、中央部９ａが内側正方形であり、ｐ＋型埋込犠牲層
１０がそれと同心かつ向きが同じ外側正方形により形成
され、内側正方形と外側正方形との間の環状部分であっ
て良い。また、ｐ＋型埋込犠牲層１０は、円形の中央部
９ａと外側正方形との間の部分またはその逆の組み合わ
せにより形成される部分であっても良く、更に、正方形
の代わりに長方形を、円形の変わりに楕円形を用いても
良い。The p + type buried sacrificial layer 10 has a central portion 9
It may extend from the entire outer edge of a to completely surround that portion, or it may extend from a portion of the outer edge. When extending from the whole, the p + -type buried sacrificial layer 10 may have an annular shape, for example, the central portion 9a has a circular shape, and the p + -type buried sacrificial layer 10 has a concentric circle and a central portion formed by concentric circles. 9a, the central portion 9a is an inner square, and the p + -type buried sacrificial layer 10 is formed by an outer square that is concentric with and has the same direction as that of the inner square. It may be a part. Further, the p + -type buried sacrificial layer 10 may be a portion formed by a portion between the circular central portion 9a and the outer square or the opposite combination, and further, instead of the square, a rectangular shape may be used. Alternatively, an elliptical shape may be used.
【００４８】また、ｐ＋型埋込犠牲層１０が、中央部９
ａの外縁の一部分から延びる場合、ｐ＋型埋込犠牲層１
０は、中央部９ａの周囲で等しい角度（例えば９０゜）
の間隔で離れた実質的に長尺の層であって良く、９０゜
の場合、ｐ＋型埋込犠牲層１０は中央部９ａにおいて相
互に対向する４本のビーム形態（即ち、中央部９ａで十
字に交差する形態）となる。換言すれば、ｐ＋型埋込犠
牲層１０は中央部９ａから放射状に延びて良く、その数
は限定されない。Further, the p + type buried sacrificial layer 10 has the central portion 9
p + type buried sacrificial layer 1 when extending from a part of the outer edge of a
0 is an equal angle (eg 90 °) around the central portion 9a
Can be substantially elongate layers spaced apart, and at 90 °, the p + type buried sacrificial layer 10 has four beam configurations facing each other in the central portion 9a (ie, in the central portion 9a). It will be a cross shape). In other words, the p + type buried sacrificial layer 10 may extend radially from the central portion 9a, and the number thereof is not limited.
【００４９】次に、単結晶シリコン基板９の一主表面上
に、加速度印加時に撓む撓み部２に相当する厚さでｎ型
のエピタキシャル層１１を形成し、所定形状にパターニ
ングされたレジストマスク（図示せず）を用いてエピタ
キシャル層１１の後述する撓み部２に対応する箇所に、
ボロン（B）等のｐ型不純物のデポジション及び熱拡散
またはイオン注入及びアニール処理を行うことによりピ
エゾ抵抗（図示せず）を形成し、同様にしてｐ型不純物
のデポジション及び熱拡散またはイオン注入及びアニー
ル処理を行うことによりピエゾ抵抗に電気的に接続され
るように拡散配線（図示せず）を形成し、フォトレジス
トを除去する。Next, an n-type epitaxial layer 11 is formed on one main surface of the single crystal silicon substrate 9 with a thickness corresponding to the bending portion 2 that bends when acceleration is applied, and a resist mask patterned into a predetermined shape. (Not shown) to a portion of the epitaxial layer 11 corresponding to a bending portion 2 described later,
A piezoresistor (not shown) is formed by performing deposition and thermal diffusion of p-type impurities such as boron (B) or ion implantation and annealing, and similarly, deposition and thermal diffusion of p-type impurities or ions are performed. Diffusion wiring (not shown) is formed so as to be electrically connected to the piezoresistors by performing implantation and annealing treatment, and the photoresist is removed.
【００５０】次に、単結晶シリコン基板９の二主表面上
及びエピタキシャル層１１上にシリコン酸化膜（図示せ
ず）を形成し、シリコン酸化膜上にシリコン窒化膜等の
保護膜（図示せず）を形成する。そして、所定形状にパ
タ−ニングされたレジストマスク（図示せず）を用いて
単結晶シリコン基板９の二主表面上に形成されたシリコ
ン酸化膜／保護膜のエッチングを行うことにより、重り
部３の外周縁に対応する箇所に開口部（図示せず）を形
成し、レジストマスクを除去する。Next, a silicon oxide film (not shown) is formed on the two main surfaces of the single crystal silicon substrate 9 and the epitaxial layer 11, and a protective film (not shown) such as a silicon nitride film is formed on the silicon oxide film. ) Is formed. Then, the silicon oxide film / protective film formed on the two main surfaces of the single crystal silicon substrate 9 is etched by using a resist mask (not shown) patterned in a predetermined shape, so that the weight portion 3 is formed. An opening (not shown) is formed at a position corresponding to the outer peripheral edge of the resist mask and the resist mask is removed.
【００５１】次に、開口部が形成されたシリコン酸化膜
／保護膜をマスクとしてKOH溶液等のアルカリ系のエッ
チャントを用いて単結晶シリコン基板９の異方性エッチ
ングを行うことにより、ｐ＋型埋込犠牲層１０に達す
か、または近傍まで切り込み部５を形成する（図６
（ｃ））。なお、ｐ＋型埋込犠牲層１０の近傍で異方性
エッチングを停止すれば、後工程において撓み部２が破
壊されるのを防止することができる。その場合、その残
りの部分を単結晶シリコン基板９の二主表面側からRIE
等により除去するようにしなければならない。Next, anisotropic etching of the single crystal silicon substrate 9 is performed by using an alkaline etchant such as KOH solution with the silicon oxide film / protective film having the openings formed as a mask to thereby p-type buried. The cut portion 5 is formed to reach the sacrificial sacrificial layer 10 or to the vicinity (FIG. 6).
(C)). If the anisotropic etching is stopped in the vicinity of the p + type buried sacrificial layer 10, it is possible to prevent the bending portion 2 from being destroyed in a later step. In that case, the remaining portion is RIEed from the second main surface side of the single crystal silicon substrate 9.
Etc. must be removed.
【００５２】次に、エピタキシャル層１１上のシリコン
酸化膜／保護膜をエッチングにより除去して開口部（図
示せず）を形成する。この時、開口部は、ｐ＋型埋込犠
牲層１０上の、後工程で形成される梁部２ｂに対応する
箇所に隣接する箇所に形成される。そして、開口部が形
成されたシリコン酸化膜／保護膜をマスクとして、エピ
タキシャル層１１をｐ＋型埋込犠牲層１０に達するまで
エッチング除去してエッチャント導入口（図示せず）を
形成する。Next, the silicon oxide film / protective film on the epitaxial layer 11 is removed by etching to form an opening (not shown). At this time, the opening is formed on the p + -type buried sacrificial layer 10 at a position adjacent to a position corresponding to the beam 2b formed in a later step. Then, using the silicon oxide film / protective film having the openings formed therein as a mask, the epitaxial layer 11 is removed by etching until it reaches the p + type buried sacrificial layer 10 to form an etchant introduction port (not shown).
【００５３】次に、エッチャント導入口からフッ酸等を
含んだ酸性溶液から成るエッチャント（50％フッ酸水溶
液：69％硝酸水溶液：酢酸＝1：1〜3：8の体積基準）を
導入してｐ＋型埋込犠牲層１０をエッチング除去して切
り込み溝４を形成して、後工程で形成される中央部２ａ
にネック部３ａを介して懸架支持された重り部３と、後
工程で形成されるフレーム１の下面側を支持し、重り部
３の外周縁を切り子壬生５を介して包囲する支持部材６
とを形成する（図６（ｄ））。Next, an etchant (50% hydrofluoric acid aqueous solution: 69% nitric acid aqueous solution: acetic acid = 1: 1 to 3: 8 by volume) was introduced from the etchant inlet through an acidic solution containing hydrofluoric acid and the like. The p + type buried sacrificial layer 10 is removed by etching to form the cut groove 4, and the central portion 2a to be formed in a later step.
A support member 6 that supports the weight portion 3 that is suspended and supported by the neck portion 3a and the lower surface side of the frame 1 that is formed in a later step, and that surrounds the outer peripheral edge of the weight portion 3 through the facets 5.
And are formed (FIG. 6D).
【００５４】次に、拡散配線上のシリコン酸化膜／保護
膜の一部をエッチング除去してコンタクトホール（図示
せず）を形成し、コンタクトホールを介して拡散配線と
電気的に接続されるようにメタル配線（図示せず）を形
成する。Next, a part of the silicon oxide film / protective film on the diffusion wiring is removed by etching to form a contact hole (not shown) so that the diffusion wiring is electrically connected through the contact hole. A metal wiring (not shown) is formed on.
【００５５】最後に、単結晶シリコン基板９の一主表面
側のエピタキシャル層１１及びシリコン酸化膜／保護膜
の所定の箇所（本製造工程においては、図１乃至図５の
平面図における白抜き部分）をエッチング除去してスリ
ット１２を形成し、枠状のフレーム１と、中央部２ａ及
び梁部２ｂを有し、梁部２ｂはフレーム１の内周側面の
少なくとも一部分と中央部２ａとの間で延在し、梁部２
ｂと中央部２ａとが一体につながっている撓み部２とを
形成する（図６（ｅ））。この時、梁部２ｂの形状は、
図１乃至図５に示す形状に形成されている。Finally, predetermined portions of the epitaxial layer 11 and the silicon oxide film / protective film on the one main surface side of the single crystal silicon substrate 9 (in this manufacturing process, white portions in the plan views of FIGS. 1 to 5) ) Is removed by etching to form a slit 12 and has a frame-shaped frame 1, a central portion 2a and a beam portion 2b, and the beam portion 2b is between at least a part of the inner peripheral side surface of the frame 1 and the central portion 2a. Beam part 2
The bending portion 2 in which b and the central portion 2a are integrally connected is formed (FIG. 6 (e)). At this time, the shape of the beam portion 2b is
It is formed in the shape shown in FIGS. 1 to 5.
【００５６】なお、撓み部２の厚さが部分的に異なる半
導体加速度センサ素子の製造工程については、図７に示
すように、ｐ＋型埋込犠牲層１０の形成領域を調整し
て、単結晶シリコン基板９の一部を梁部２ｂとして用い
ることにより可能である。Regarding the manufacturing process of the semiconductor acceleration sensor element in which the thickness of the bending portion 2 is partially different, the formation region of the p + type buried sacrificial layer 10 is adjusted as shown in FIG. This is possible by using a part of the silicon substrate 9 as the beam portion 2b.
【００５７】[0057]
【発明の効果】請求項１記載の発明は、中央部と該中央
部から延在する梁部とを有する撓み部と、該撓み部を支
持するフレームと、前記中央部にネック部を介して連結
される重り部と、前記梁部と前記重り部の間の所定位置
に設けられた切り込み溝と、該重り部を切り込み部を介
して包囲するとともに前記フレームの一面側を支持する
支持部材とを有し、前記切り込み部が前記切り込み溝に
連通して成る半導体加速度センサ素子において、前記梁
部に折り曲げ部を複数設けるとともに、前記撓み部を該
撓み部形成面に対して回転対称となるように構成したの
で、外力からの残留応力による撓み部の反りが解消さ
れ、感度，オフセット電圧等の温度による変動を抑制す
ることができ、良好で安定した特性を得ることができ、
センサチップへの外部からの熱ストレスを緩和し、温度
特性に優れ、高性能な半導体加速度センサ素子を提供す
ることができた。According to the first aspect of the present invention, the bending portion having the central portion and the beam portion extending from the central portion, the frame supporting the bending portion, and the neck portion in the central portion are provided. A weight portion to be connected, a notch groove provided at a predetermined position between the beam portion and the weight portion, and a support member that surrounds the weight portion via the notch portion and supports one surface side of the frame. the a, in the semiconductor acceleration sensor device the cut portion is made to communicate with the notches, a plurality provided with a bent portion to the beam portion, so as to be rotationally symmetrical to the deflection unit relative to該撓viewed forming surface Since it is configured as described above, the warpage of the bending portion due to the residual stress from the external force is eliminated, the fluctuations in sensitivity, offset voltage, etc. due to temperature can be suppressed, and good and stable characteristics can be obtained.
It has been possible to provide a high-performance semiconductor acceleration sensor element which has an excellent temperature characteristic by mitigating external thermal stress on the sensor chip.
【００５８】請求項２記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材とを有し、前記切り込み部が前記切り込み溝に連
通して成る半導体加速度センサ素子において、前記梁部
の所望の箇所が、平行する複数の梁部で構成されている
ので、請求項１記載の発明の効果に加えて、さらに応力
を緩和することができる。According to a second aspect of the invention, the central portion and the central portion
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
A holding member, and the cutout portion is connected to the cutout groove.
In the semiconductor acceleration sensor element formed by passing through the beam part,
Desired portion of, the <br/> that consists of a plurality of beam portions parallel, in addition to the effect of the invention of claim 1 Symbol mounting can be relaxed further stress.
【００５９】請求項３記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材とを有し、前記切り込み部が前記切り込み溝に連
通して成る半導体加速度センサ素子において、前記梁部
の所望の箇所が、分岐されているので、請求項１または
２に記載の発明の効果に加えて、さらに応力を緩和する
ことができる。According to a third aspect of the present invention, the central portion and the central portion
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
A holding member, and the cutout portion is connected to the cutout groove.
In the semiconductor acceleration sensor element formed by passing through , since the desired portion of the beam portion is branched, in addition to the effect of the invention described in claim 1 or 2, stress can be further relieved.
【００６０】請求項４記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材とを有し、前記切り込み部が前記切り込み溝に連
通して成る半導体加速度センサ素子において、前記梁部
が、薄肉部と厚肉部とで構成されているので、請求項１
乃至請求項３のいずれかに記載の発明の効果に加えて、
さらに応力を緩和することができる。According to a fourth aspect of the present invention, the central portion and the central portion
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
A holding member, and the cutout portion is connected to the cutout groove.
In the semiconductor acceleration sensor element formed by passing through the beam part,
Is composed of a thin wall portion and a thick wall portion.
In addition to the effects of the invention according to any one of claims 3 to 5,
Further, the stress can be relieved.
【００６１】請求項５記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材とを有し、前記切り込み部が前記切り込み溝に連
通して成る半導体加速度センサ素子において、前記折り
曲げ部，前記中央部と前記梁部との連結部，前記梁部と
前記フレームとの連結部及び前記中央部と前記ネック部
との連結部に丸みを持たせたので、請求項１乃至請求項
４のいずれかに記載の発明の効果に加えて、外力による
破壊を防止することができる。According to a fifth aspect of the present invention, the central portion and the central portion
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
A holding member, and the cutout portion is connected to the cutout groove.
In the semiconductor acceleration sensor element comprising through, the folding
A bent portion, a connecting portion between the central portion and the beam portion, and the beam portion
Connecting part with the frame and the central part and the neck part
Since the connecting portion with and is rounded, in addition to the effect of the invention according to any one of claims 1 to 4, it is possible to prevent destruction due to an external force.
【００６２】請求項６記載の発明は、請求項１乃至請求
項５のいずれかに記載の半導体加速度センサ素子の製造
方法であって、前記ネック部，前記重り部及び前記支持
部材が半導体基板を用いて形成され、前記フレーム及び
前記撓み部が前記半導体基板上に形成されたエピタキシ
ャル層を用いて形成されたので、請求項１乃至請求項５
のいずれかに記載の発明の効果に加えて、撓み部の厚み
を精度良く形成することができる。A sixth aspect of the present invention is a method for manufacturing the semiconductor acceleration sensor element according to any one of the first to fifth aspects.
A method comprising the neck portion, the weight portion and the support
The member is formed using a semiconductor substrate, the frame and
An epitaxy in which the flexure is formed on the semiconductor substrate.
Is formed by using a thin layer, and therefore,
In addition to the effect of the invention described in any one of the above, the thickness of the bending portion can be accurately formed.
【００６３】請求項７記載の発明は、請求項４記載の半
導体加速度センサ素子の製造方法であって、前記ネック
部，前記重り部及び前記支持部材が半導体基板を用いて
形成され、前記フレーム及び前記中央部及び前記梁部の
薄肉部が前記半導体基板上に形成されたエピタキシャル
層を用いて形成され、前記梁部の厚肉部が前記半導体基
板及び前記エピタキシャル層を用いて形成されたので、
請求項４記載の発明の効果に加えて、撓み部の厚みを精
度良く形成することができる。The invention according to claim 7 is the method for manufacturing a semiconductor acceleration sensor element according to claim 4 , wherein the neck portion, the weight portion and the supporting member are formed using a semiconductor substrate, and the frame and Of the central portion and the beam portion
The thin portion is formed by using the epitaxial layer formed on the semiconductor substrate, and the thick portion of the beam portion is the semiconductor substrate.
Since it was formed using the plate and the epitaxial layer ,
In addition to the effect of the invention described in claim 4 , the thickness of the bending portion can be accurately formed.
【００６４】請求項８記載の発明は、請求項６または請
求項７記載の半導体加速度センサ素子の製造方法であっ
て、前記切り込み溝が前記半導体基板の一主表面に形成
された高濃度不純物層をエッチング除去することにより
形成されたので、請求項６または請求項７記載の発明の
効果に加えて、さらに撓み部の厚みを精度良く形成する
ことができる。The invention according to claim 8 is the invention according to claim 6 or the contract.
A method of manufacturing a semiconductor acceleration sensor element according to claim 7 , wherein the cut groove is formed on one main surface of the semiconductor substrate.
Since the high-concentration impurity layer thus formed is removed by etching , in addition to the effect of the invention according to claim 6 or 7, it is possible to further accurately form the thickness of the bending portion. .
【００６５】請求項９記載の発明は、中央部と該中央部
から延在する梁部とを有する撓み部と、該撓み部を支持
するフレームと、前記中央部にネック部を介して連結さ
れる重り部と、前記梁部と前記重り部の間の所定位置に
設けられた切り込み溝と、該重り部を切り込み部を介し
て包囲するとともに前記フレームの一面側を支持する支
持部材と、前記撓み部の一面側所定位置に設けられたピ
エゾ抵抗とを有し、前記切り込み部が前記切り込み溝に
連通して成る半導体加速度センサ素子において、前記梁
部に折り曲げ部を設けるとともに、前記撓み部を該撓み
部形成面に対して回転対称となるように構成したので、
外力からの残留応力による撓み部の反りが解消され、感
度，オフセット電圧等の温度による変動を抑制すること
ができ、良好で安定した特性を得ることができ、センサ
チップへの外部からの熱ストレスを緩和し、温度特性に
優れ、高性能な半導体加速度センサ素子を提供すること
ができる。According to a ninth aspect of the invention, the central portion and the central portion
A flexible portion having a beam portion extending from the flexible portion, and supporting the flexible portion.
The frame is connected to the center through the neck.
At the predetermined position between the beam part and the weight part.
The notch groove provided and the weight part through the notch part
A support that surrounds and supports one side of the frame.
The holding member and a pin provided at a predetermined position on one surface side of the bending portion.
Ezo resistance, and the cut portion is in the cut groove.
In the semiconductor acceleration sensor element formed in communication , the beam
The bent portion is provided to the bending portion, and the bending portion is
Since it is configured to be rotationally symmetric with respect to the part forming surface ,
Warping of the flexure due to residual stress from external force is eliminated,
To suppress fluctuations in temperature, offset voltage, etc. due to temperature
The sensor can obtain good and stable characteristics.
Relieves thermal stress on the chip from the outside, and improves temperature characteristics
An excellent and high-performance semiconductor acceleration sensor element can be provided .
【図１】本発明の一実施の形態に係る半導体加速度セン
サ素子を示す概略構成図であり、（ａ）は概略平面図で
あり、（ｂ）は（ａ）のＡ−Ａ’での概略断面図であ
り、（ｃ）は（ａ）のＢ−Ｂ’での概略断面図である。FIG. 1 is a schematic configuration diagram showing a semiconductor acceleration sensor element according to an embodiment of the present invention, (a) is a schematic plan view, and (b) is a schematic view taken along the line AA ′ of (a). It is sectional drawing, (c) is a schematic sectional drawing in BB 'of (a).
【図２】本発明の他の実施の形態に係る半導体加速度セ
ンサ素子を示す概略平面図である。FIG. 2 is a schematic plan view showing a semiconductor acceleration sensor element according to another embodiment of the present invention.
【図３】本発明の他の実施の形態に係る半導体加速度セ
ンサ素子を示す概略平面図である。FIG. 3 is a schematic plan view showing a semiconductor acceleration sensor element according to another embodiment of the present invention.
【図４】本発明の他の実施の形態に係る半導体加速度セ
ンサ素子を示す概略平面図である。FIG. 4 is a schematic plan view showing a semiconductor acceleration sensor element according to another embodiment of the present invention.
【図５】本発明の他の実施の形態に係る半導体加速度セ
ンサ素子を示す概略平面図である。FIG. 5 is a schematic plan view showing a semiconductor acceleration sensor element according to another embodiment of the present invention.
【図６】本発明の他の実施の形態に係る半導体加速度セ
ンサ素子の製造工程を示す概略断面図である。FIG. 6 is a schematic cross-sectional view showing the manufacturing process of the semiconductor acceleration sensor element according to another embodiment of the present invention.
【図７】本発明の他の実施の形態に係る半導体加速度セ
ンサ素子の製造工程を示す概略断面図である。FIG. 7 is a schematic cross-sectional view showing a manufacturing process of a semiconductor acceleration sensor element according to another embodiment of the present invention.
【図８】従来例に係る半導体加速度センサの製造工程を
示す概略断面図である。FIG. 8 is a schematic cross-sectional view showing a manufacturing process of a semiconductor acceleration sensor according to a conventional example.
【図９】上図に係る半導体加速度センサの上面から見た
状態を示す概略平面図である。FIG. 9 is a schematic plan view showing a state of the semiconductor acceleration sensor according to the above figure as viewed from above.
１ フレーム ２ 撓み部 ２ａ 中央部 ２ｂ 梁部 ２ｂ１ 第一梁部 ２ｂ２ 第二梁部 ２ｂ３ 第三梁部 ２ｂ４ 第四梁部 ３ 重り部 ３ａ ネック部 ４ 切り込み溝 ５ 切り込み部 ６ 支持部材 ７ａ，７ｂ 折り曲げ部 ８ 枝分かれ部 ９ 単結晶シリコン基板 ９ａ 中央部 １０ ｐ＋型埋込犠牲層 １１ エピタキシャル層 １２ スリット １３ シリコン酸化膜 １４ ピエゾ抵抗 １５ 拡散配線 １６ 保護膜 １６ａ 開口部 １７ メタル配線 1 frame 2 flexure 2a Central part 2b Beam part 2b1 First beam part 2b2 Second beam part 2b3 Third beam part 2b4 Fourth beam part 3 Weight section 3a neck part 4 notch 5 notch 6 Support members 7a, 7b Bent section 8 branches 9 Single crystal silicon substrate 9a central part 10 p + type embedded sacrificial layer 11 Epitaxial layer 12 slits 13 Silicon oxide film 14 Piezoresistor 15 Diffusion wiring 16 Protective film 16a opening 17 Metal wiring
フロントページの続き (72)発明者 宮島 久和 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 石田 拓郎 大阪府門真市大字門真1048番地松下電工 株式会社内 (56)参考文献 特開 平11−248738（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G01P 15/12 H01L 29/84 Front page continued (72) Inventor Hisawa Miyajima 1048, Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Works, Ltd. (72) Takuro Ishida, 1048, Kadoma, Kadoma, Osaka Prefecture (56) References JP-A-11-248738 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) G01P 15/12 H01L 29/84
Claims (9)
有する撓み部と、該撓み部を支持するフレームと、前記
中央部にネック部を介して連結される重り部と、前記梁
部と前記重り部の間の所定位置に設けられた切り込み溝
と、該重り部を切り込み部を介して包囲するとともに前
記フレームの一面側を支持する支持部材とを有し、前記
切り込み部が前記切り込み溝に連通して成る半導体加速
度センサ素子において、前記梁部に折り曲げ部を複数設
けるとともに、前記撓み部を該撓み部形成面に対して回
転対称となるように構成したことを特徴とする半導体加
速度センサ素子。1. A flexible portion having a central portion and a beam portion extending from the central portion, a frame supporting the flexible portion, a weight portion connected to the central portion via a neck portion, and A notch groove provided at a predetermined position between the beam portion and the weight portion, and a supporting member that surrounds the weight portion via the notch portion and supports one surface side of the frame, and the notch portion In the semiconductor acceleration sensor element communicating with the cut groove, a plurality of bent portions are provided on the beam portion, and the bending portion is configured to be rotationally symmetric with respect to the bending portion forming surface. A semiconductor acceleration sensor element characterized by the above.
有する撓み部と、該撓み部を支持するフレームと、前記
中央部にネック部を介して連結される重り部と、前記梁
部と前記重り部の間の所定位置に設けられた切り込み溝
と、該重り部を切り込み部を介して包囲するとともに前
記フレームの一面側を支持する支持部材とを有し、前記
切り込み部が前記切り込み溝に連通して成る半導体加速
度センサ素子において、前記梁部に折り曲げ部を設け、
前記梁部の所望の箇所を平行する複数の梁部で構成する
とともに、前記撓み部を該撓み部形成面に対して回転対
称となるように構成したことを特徴とする半導体加速度
センサ素子。2. A central portion and a beam portion extending from the central portion
A flexible portion having a frame, a frame supporting the flexible portion,
The weight portion connected to the central portion through the neck portion, and the beam
Groove provided at a predetermined position between the weight portion and the weight portion
And surrounding the weight through the notch and
A supporting member for supporting one surface side of the frame,
Semiconductor acceleration in which the notch communicates with the notch
In time the sensor element, set the in fold bend in the beam portion,
The desired part of the beam part is composed of a plurality of parallel beam parts
At the same time, the bending portion is rotated with respect to the bending portion forming surface.
Semiconductors acceleration sensor element characterized by being configured such that the universal.
有する撓み部と、該撓み部を支持するフレームと、前記
中央部にネック部を介して連結される重り部と、前記梁
部と前記重り部の間の所定位置に設けられた切り込み溝
と、該重り部を切り込み部を介して包囲するとともに前
記フレームの一面側を支持する支持部材とを有し、前記
切り込み部が前記切り込み溝に連通して成る半導体加速
度センサ素子において、前記梁部に折り曲げ部を設け、
前記梁部の所望の箇所を分岐するとともに、前記撓み部
を該撓み部形成面に対して回転対称となるように構成し
たことを特徴とする半導体加速度センサ素子。3. A central portion and a beam portion extending from the central portion
A flexible portion having a frame, a frame supporting the flexible portion,
The weight portion connected to the central portion through the neck portion, and the beam
Groove provided at a predetermined position between the weight portion and the weight portion
And surrounding the weight through the notch and
A supporting member for supporting one surface side of the frame,
Semiconductor acceleration in which the notch communicates with the notch
In the degree sensor element, a bent portion is provided on the beam portion,
While branching a desired portion of the beam portion, the bending portion
Is configured so as to be rotationally symmetric with respect to the bending portion forming surface.
Semiconductors acceleration sensor element characterized in that the.
有する撓み部と、該撓み部を支持するフレームと、前記
中央部にネック部を介して連結される重り部と、前記梁
部と前記重り部の間の所定位置に設けられた切り込み溝
と、該重り部を切り込み部を介して包囲するとともに前
記フレームの一面側を支持する支持部 材とを有し、前記
切り込み部が前記切り込み溝に連通して成る半導体加速
度センサ素子において、前記梁部に折り曲げ部を設け、
前記梁部を薄肉部と厚肉部とで構成するとともに、前記
撓み部を該撓み部形成面に対して回転対称となるように
構成したことを特徴とする半導体加速度センサ素子。4. A central portion and a beam portion extending from the central portion
A flexible portion having a frame, a frame supporting the flexible portion,
The weight portion connected to the central portion through the neck portion, and the beam
Groove provided at a predetermined position between the weight portion and the weight portion
And surrounding the weight through the notch and
And a support member for supporting the one side of the serial frame, wherein
Semiconductor acceleration in which the notch communicates with the notch
In the degree sensor element, a bent portion is provided on the beam portion ,
The beam portion is composed of a thin portion and a thick portion, and
So that the bending portion is rotationally symmetric with respect to the bending portion forming surface.
Semiconductors acceleration sensor element you characterized in that configuration was.
有する撓み部と、該撓み部を支持するフレームと、前記
中央部にネック部を介して連結される重り部と、前記梁
部と前記重り部の間の所定位置に設けられた切り込み溝
と、該重り部を切り込み部を介して包囲するとともに前
記フレームの一面側を支持する支持部材とを有し、前記
切り込み部が前記切り込み溝に連通して成る半導体加速
度センサ素子において、前記梁部に折り曲げ部を設け、
前記折り曲げ部、前記中央部と前記梁部との連結部、前
記梁部と前記フレームとの連結部及び前記中央部と前記
ネック部との連結部に丸みを持たせるとともに、前記撓
み部を該撓み部形成面に対して回転対称となるように構
成したことを特徴とする半導体加速度センサ素子。5. A central portion and a beam portion extending from the central portion
A flexible portion having a frame, a frame supporting the flexible portion,
The weight portion connected to the central portion through the neck portion, and the beam
Groove provided at a predetermined position between the weight portion and the weight portion
And surrounding the weight through the notch and
A supporting member for supporting one surface side of the frame,
Semiconductor acceleration in which the notch communicates with the notch
In the degree sensor element, a bent portion is provided on the beam portion ,
The bent portion, the connecting portion between the central portion and the beam portion, the front
The connecting portion between the beam portion and the frame, the central portion, and the
In addition to rounding the connecting part with the neck part,
Semiconductors acceleration sensor element you characterized in that it is configured <br/> formed so as to be rotationally symmetrical only part against該撓viewed forming surface.
の半導体加速度センサ素子の製造方法であって、前記ネ
ック部、前記重り部及び前記支持部材が半導体基板を用
いて形成され、前記フレーム及び前記撓み部が前記半導
体基板上に形成されたエピタキシャル層を用いて形成さ
れたことを特徴とする半導体加速度センサ素子の製造方
法。6. The method according to any one of claims 1 to 5.
The method of manufacturing a semiconductor acceleration sensor element according to
The semiconductor substrate is used for the hook portion, the weight portion, and the supporting member.
And the frame and the flexure are
Formed using an epitaxial layer formed on the body substrate
Is produced beside the semi-conductor acceleration sensor element you characterized in that the
Law .
の製造方法であって、前記ネック部、前記重り部及び前
記支持部材が半導体基板を用いて形成され、前記フレー
ム及び前記中央部及び前記梁部の薄肉部が前記半導体基
板上に形成されたエピタキシャル層を用いて形成され、
前記梁部の厚肉部が前記半導体基板及び前記エピタキシ
ャル層を用いて形成されたことを特徴とする半導体加速
度センサ素子の製造方法。 7. The method of manufacturing a semiconductor acceleration sensor element according to claim 4 , wherein the neck portion, the weight portion and the support member are formed by using a semiconductor substrate, and the frame, the center portion and the beam are formed. A thin portion of the portion is formed using an epitaxial layer formed on the semiconductor substrate ,
The thick portion of the beam portion corresponds to the semiconductor substrate and the epitaxy.
A method for manufacturing a semiconductor acceleration sensor element, which is formed by using a thin layer .
表面に形成された高濃度不純物層をエッチング除去する
ことにより形成されたことを特徴とする請求項６又は請
求項７記載の半導体加速度センサ素子の製造方法。 8. The main groove of the semiconductor substrate is the cut groove.
Etching away the high concentration impurity layer formed on the surface
Claim 6 or請, characterized in that it is formed by
A method for manufacturing a semiconductor acceleration sensor element according to claim 7 .
有する撓み部と、該 撓み部を支持するフレームと、前記
中央部にネック部を介して連結される重り部と、前記梁
部と前記重り部の間の所定位置に設けられた切り込み溝
と、該重り部を切り込み部を介して包囲するとともに前
記フレームの一面側を支持する支持部材と、前記撓み部
の一面側所定位置に設けられたピエゾ抵抗とを有し、前
記切り込み部が前記切り込み溝に連通して成る半導体加
速度センサ素子において、前記梁部に折り曲げ部を設け
るとともに、前記撓み部を該撓み部形成面に対して回転
対称となるように構成したことを特徴とする半導体加速
度センサ素子。 9. A central portion and a beam portion extending from the central portion
A flexure having a frame supporting the flexure, the
The weight portion connected to the central portion through the neck portion, and the beam
Groove provided at a predetermined position between the weight portion and the weight portion
And surrounding the weight through the notch and
A supporting member for supporting one surface side of the frame, and the bending portion.
A piezoresistor provided at a predetermined position on one side of the
A semiconductor processing device in which a notch portion communicates with the notch groove.
In the speed sensor element, a bent portion is provided on the beam portion.
And rotate the bending portion with respect to the bending portion forming surface.
The semiconductor acceleration sensor element characterized by being configured to be symmetrical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24061098A JP3405219B2 (en) | 1998-08-26 | 1998-08-26 | Semiconductor acceleration sensor element and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24061098A JP3405219B2 (en) | 1998-08-26 | 1998-08-26 | Semiconductor acceleration sensor element and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000065854A JP2000065854A (en) | 2000-03-03 |
| JP3405219B2 true JP3405219B2 (en) | 2003-05-12 |
Family
ID=17062064
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24061098A Expired - Fee Related JP3405219B2 (en) | 1998-08-26 | 1998-08-26 | Semiconductor acceleration sensor element and method of manufacturing the same |
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| JP2014041164A (en) * | 2013-12-05 | 2014-03-06 | New Cosmos Electric Corp | Gas detection element |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014061099A1 (en) * | 2012-10-16 | 2014-04-24 | 日立オートモティブシステムズ株式会社 | Inertial sensor |
| DE102017210691A1 (en) * | 2017-06-26 | 2018-12-27 | Robert Bosch Gmbh | Process for the production of micromechanical sensors |
| CN109596859B (en) * | 2019-01-18 | 2021-08-31 | 中国电子科技集团公司第十三研究所 | Piezoresistive Accelerometer |
| CN117686737B (en) * | 2023-10-26 | 2025-06-27 | 武汉杰开科技有限公司 | Acceleration sensor |
-
1998
- 1998-08-26 JP JP24061098A patent/JP3405219B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007132814A (en) * | 2005-11-10 | 2007-05-31 | Nippon Ceramic Co Ltd | MEMS structure for gas sensor |
| JP2014041164A (en) * | 2013-12-05 | 2014-03-06 | New Cosmos Electric Corp | Gas detection element |
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| Publication number | Publication date |
|---|---|
| JP2000065854A (en) | 2000-03-03 |
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