JP3409741B2 - Semiconductor laser optical module for WDM - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser optical module, and more particularly to a semiconductor laser optical module suitable for WDM optical communication and the like.

[0002]

2. Description of the Related Art Wavelength division multiplexing (WDM) optical communication technology has various possibilities such as an increase in communication capacity in a trunk system, a wavelength routing function in an optical access system, and an application to optical interconnection between computer boards. It is an attractive technology that has the potential for sex. In this WDM optical communication, it is necessary to prepare a large number of semiconductor laser optical modules having an oscillation wavelength that matches a channel wavelength grid designated on the system side.

In the conventional optical communication using a single wavelength of 1550 nm band, the oscillation wavelength accuracy required for the optical module was not so strict, but in WDM optical communication, the wavelength grid spacing is 0.8 nm ( 100 GHz),
Or 1.6 nm (200 GHz), more recently 0.
The system of 4 nm (50 GHz) is being considered, and the oscillation wavelength accuracy required for the optical module is becoming extremely high.

As a method of adjusting the oscillation wavelength, there is a method of adjusting the oscillation wavelength by controlling the operating temperature of the semiconductor laser. For example, when controlling the operating temperature of the semiconductor laser using a Peltier element, the oscillation wavelength that can be adjusted The range is ± at most considering the deterioration of laser characteristics such as threshold current.
Since it is about 0.5 nm (about ± 5 ° C.), the deviation of the oscillation wavelength of the manufactured semiconductor laser is ± 0.5 from the target value.
Only about nm is allowed.

The parameters for determining the oscillation wavelength of the single mode semiconductor laser for optical communication are: the diffraction grating period Λ, the refractive index n of the semiconductor optical waveguide layer,
There are the width W of the semiconductor optical waveguide, the cleaved facet phase φ of the laser, and the like. Using these parameters, the oscillation wavelength λ of the laser can be represented by λ = 2neqΛ in an ideal case. Here, neq is the equivalent refractive index of the optical waveguide determined by the waveguide width W with the refractive index n of.

Now, the deviation of the oscillation wavelength from the target value is ± 0.
The accuracy required for each parameter is 5 nm.
Λ: ± 0.08 nm, n: ± 1%, W: ± 0.07 μm
However, the end face phase φ is a parameter that is determined completely at random, and the other parameters Λ, n, and W include a manufacturing error far from satisfying the above accuracy with the current manufacturing method. . That is, with the current technology, it is very difficult to set the oscillation wavelength of the semiconductor laser to the target value ± 0.5 nm.

Therefore, in the past, when supplying a semiconductor laser optical module for WDM, the manufacturer side produced an element many times until the oscillation wavelength coincided with the target value when the oscillation wavelength was designated by the user side ( (Tries and errors) must be repeated, resulting in wasting a large amount of wafers, causing elements with wavelengths deviating from the target value, and causing WDM.
There has been a problem that the price of the optical module for use is remarkably increased.

Conventionally, WDM semiconductor lasers have been manufactured with a pitch of elements on the wafer of about 250 to 300 μm. As a result, the total number of elements that can be obtained from one 2-inch wafer is 3 for the laser element chip size.
When the width is 00 μm × 400 μm, the number is about 10,000. When the diffraction grating (period Λ) is formed by the interference exposure method, the oscillation wavelength of the laser element that can be obtained from one wafer is almost one type. Therefore, when the oscillation wavelength deviates from the target value due to manufacturing error. , The 10,000 elements are wasted.

On the other hand, recently, as a method of obtaining a semiconductor laser having a target oscillation wavelength even if an error occurs in manufacturing a laser element, a method of manufacturing a diffraction grating using electron beam exposure has been proposed ( For example, Japanese Patent Application No. 08-26
7006, etc.). By using this method, it is possible to change many kinds of diffraction grating periods within one wafer, so that semiconductor lasers having different oscillation wavelengths can be obtained from one wafer. For example, when eight kinds of diffraction grating periods are changed, semiconductor lasers that oscillate at eight different wavelengths can be manufactured.

[0010]

However, in this case, since it is sufficient that any one of the lasers of eight kinds of oscillation wavelengths agrees with the target oscillation wavelength, the probability of obtaining a desired element is higher than that of the conventional one. However, the total number of obtained elements naturally decreases to ⅛, and 7/8 elements that do not match the target oscillation wavelength are wasted. Therefore, although there is an effect of suppressing an increase in the manufacturing cost of the light source to some extent, there is a problem that the yield of the device from the unit wafer is reduced and the price of the semiconductor laser optical module is increased as a result.

That is, in the conventional semiconductor laser optical module for WDM, the manufacturing yield is low because the tolerance of the deviation from the target oscillation wavelength is small as compared with the normal semiconductor laser optical module, and as a result, the module price is low. There was a problem that it became extremely high.

In contrast to this problem, the conventional wavelength tunable laser utilizing current injection or resistance heating has a problem in long-term reliability of wavelength and cannot be practically used as an optical module. Further, it is conceivable to use a multi-wavelength light source in which a distributed feedback (DFB) type laser of different wavelength and an optical multiplexer are integrated. However, this is also because the yield is deteriorated due to the process complexity in manufacturing the optical integrated device. At present, it is difficult to use it in terms of cost.

The present invention has been made in view of the above problems, and its main object is to provide a low-cost WDM that can be used even when the oscillation wavelength is deviated due to a manufacturing error. It is to provide a semiconductor laser optical module.

[0014]

In order to achieve the above object, the present invention is, in a first aspect, a semiconductor optical device comprising a plurality of semiconductor laser light sources arranged in an array on one chip. An optical fiber for taking out an optical output from the semiconductor optical element, a detecting means for monitoring the output light from the semiconductor optical element, and an oscillation by controlling the temperature of the semiconductor optical element based on a signal from the detecting means. A semiconductor laser optical module having at least adjusting means for adjusting a wavelength, wherein the plurality of semiconductor laser light sources have different oscillation wavelengths, and one semiconductor selected from the plurality of semiconductor laser light sources. Only the output light from the laser light source is incident on the optical fiber.

In the present invention, a lens system for condensing laser light emitted from the plurality of semiconductor laser light sources onto the optical fiber may be provided between the semiconductor optical element and the optical fiber. it can.

Further, in the present invention, a spot size converter is provided at an output end of each semiconductor laser light source of the semiconductor optical device, and the spot size converter outputs laser light emitted from the semiconductor laser light source. It is also possible to adopt a configuration in which the light is focused on the optical fiber.

Further, in the present invention, an optical modulator is provided at the output end of each semiconductor laser light source of the semiconductor optical device, and the laser light modulated by the optical modulator is focused on the optical fiber. It can also be configured.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION In a preferred embodiment of a semiconductor laser optical module for WDM according to the present invention, a plurality of semiconductor laser light sources having different oscillation wavelengths are arranged in an array on one chip. The DFB laser array (1 in FIG. 1), the lens (5 in FIG. 1) and the optical fiber (2 in FIG. 1) for extracting the laser light, the output of the laser light is monitored, and the oscillation wavelength is adjusted by the temperature control. Which includes a wavelength filter, a light receiving element (3 in FIG. 1) and a Peltier element (4 in FIG. 1), and only the output light from the one semiconductor laser light source closest to the target oscillation wavelength among the plurality of semiconductor laser light sources. However, the wavelength is adjusted by the Peltier element, and is focused on the optical fiber through the lens.

Regarding the above-described embodiment of the present invention,
This will be described with reference to FIG. 1A and 1B are views for explaining a WDM semiconductor optical module according to an embodiment of the present invention, in which FIG. 1A is a top view and FIG. 1B is a sectional view. The optical module of this embodiment has a minimum array period (10 μm).
m) DFB laser array 1 in which semiconductor lasers are arranged
The optical fiber 2, the light receiving element 3, the Peltier element 4, the lens 5 and the lens support 6, and the wavelength filter 8 are used. The single mode optical fiber has a core diameter of about 10 μm.

In the present invention, the array spacing of the DFB laser array 1 integrated in one chip is minimized to about 10 μm. In the conventional DFB laser array, since the array spacing is as large as about 250 μm, if 6 channels are arranged, the lateral size of the chip becomes about 1.25 mm, and the element yield from one wafer is greatly reduced.

However, in the present invention, since the array interval is minimized to about 10 μm, even with a 6-channel array, the element size of one chip is the same as the conventional D.
FB laser width is the same as one chip size 250μm width ×
The length can be about 400 μm. That is, the yield of array elements from one wafer can be maintained at the same level as in the conventional case.

Further, the present invention is characterized in that the oscillation wavelengths of the respective DFB lasers constituting this array are gradually shifted around the target oscillation wavelength. For example, when the oscillation wavelength required on the system side is 1550 nm,
The design value of the oscillation wavelength of each DFB laser is set to ch. 1 is 154
8 nm, ch. 2 is 1549 nm, ch. 3 is 1550
nm (matches the target value), ch. 4 is 1551 nm, c
h. 5 is 1552 nm, ch. 6 is 1553nm and 1n
Change at m intervals.

Then, even if the oscillation wavelength of the device fabricated on one wafer is shifted to the long wavelength side by about 2 nm when completed due to various process errors,
Since the relative values of the oscillation wavelengths are almost kept between the elements that are densely arranged and adjacent to each other, ch. The oscillation wavelength of 1 is the design value 1
The actual value is 1550 nm with respect to 548 nm, which is a wavelength that matches the target value. Then, finally, the optical output from the channel 1 is condensed by using the lens 5 in the optical module, so that the semiconductor laser optical module satisfying the requirements of the system side can be realized. That is, in the present invention, the semiconductor laser array is not used as an array, but only one laser in the array is used as a semiconductor laser with extremely high redundancy.

As described above, in the conventional optical module, the element yield from one wafer becomes 0 when the oscillation wavelength shifts to the long wavelength side of 2 nm, but according to the present invention, any channel is Is within the allowable range of the target wavelength,
It is possible to secure almost 100% yield from one wafer. As a result, the yield of the optical module is significantly improved, and the semiconductor laser optical module can be supplied at a low price. In the present invention, the electrodes 7 are provided at the positions where the current injection windows are partially opened so that the laser of each channel can be driven independently.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to describe the embodiment of the present invention described above in more detail, an embodiment of the present invention will be described below with reference to the drawings.

[Embodiment 1] First, referring to FIG. 2, a WDM DFB laser optical module according to a first embodiment of the present invention will be described. FIG. 1 shows the W according to the first embodiment.
It is a figure for demonstrating the structure of the DFB laser optical module for DM, (a) is a perspective view of a DFB laser array,
(B) is sectional drawing of a laser beam module.

Referring to FIG. 2, the WDM DF of the present embodiment.
Explaining the structure of the B laser optical module, the optical module includes an 8-channel different wavelength DFB laser array 15 arranged at a minimum array period of 9 μm, a single mode optical fiber 2 having a core diameter of 12 μm, and a light receiving element. 3, a Peltier element 4, a lens 5, a lens support 6, a wavelength filter 8, and an optical isolator 11.
Since the total width of the array of the 8ch laser array is about 63 μm, the element size of the DFB laser array is
It was possible to achieve the conventional one-chip element size of μm and length of 300 μm.

The electrode 7 of the DFB laser array used a double electrode structure with a partially opened window so that current can be independently injected into each channel. The oscillation wavelength of the laser array is different for each channel from the diffraction grating 1
By using 0, 1 is centered around 1550 nm
It is changed in units of nm (distributed in the range of 7 nm for the entire array) (IEEE Photonics Technology Letters, vol.
9, no. 10, pp. 1313-1315, 1997).

The active layer of each DFB laser constituting the array is composed of a multiple quantum well (MQW) layer 9, and each channel has a uniform low threshold current oscillation of about 5 mA and a high output characteristic of 20 mW or more on one side. It was possible to obtain various characteristics. For the target oscillation wavelength of 1550.00 nm,
The oscillation wavelength finally obtained is c at a temperature of 25 ° C.
h. 1 is 1547 nm, ch. 2 is 1548.2 nm,
ch. 3 is 1549.6 nm, ch. 4 is 1551.2
nm, ch. 5 is 1552.0 nm, ch. 6 is 155
2.9 nm, ch. 7 is 1553.9 nm, ch. 8 was 1554.1 nm.

In this case, the channel 3 can be applied as a channel matching 1550.00 nm, and current is injected only from the electrode 7 connected to the channel 3 and only the optical output from the channel 3 is supplied to the optical fiber. Two
Bind to. By not injecting current into the other channels, laser light from the other channels does not enter the optical fiber 2. Further, the lens 5 is designed so that the laser light emitted from any position of the 8 channels is focused on the optical fiber 2.

The oscillation wavelength of the DFB laser of the adopted channel is the wavelength filter 8 (for example, a dielectric multi-layer film wavelength filter or the like, the number of stages of the wavelength filter is multistage (2 stages, 3 stages, etc.) according to the purpose. In some cases, the intensity of light passing through the light receiving element 3 is monitored by the light receiving element 3 and is fed back to the temperature of the Peltier element 4 so that the oscillation wavelength can be locked to a target oscillation wavelength.

As a result, in the DFB laser array optical module for WDM of the present embodiment, even if a deviation from the target oscillation wavelength occurs due to a manufacturing error, one of the eight channels is targeted. Since the oscillation wavelength can be kept within the allowable range, the production yield of the optical module can be significantly improved, and the cost of the optical module can be reduced.

[Second Embodiment] Next, a DFB laser optical module according to a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a DFB with a spot size converter (SSC) according to the second embodiment.
It is a figure for demonstrating a laser beam module, (a)
Is a partial cross-sectional view of the laser oscillation portion, (b) is a top view of the laser array, and (c) is a cross-sectional view of the laser light module.

The DFB laser optical module with SSC for WDM of the present embodiment is the same as the 8-channel different wavelength DFB laser array of the first embodiment described above but different wavelength S of 6 channels.
This is equivalent to one in which the DFB laser array with SC is replaced and the condenser lens 5 and the lens support 6 are removed.

Referring to FIG. 3A, the DFB laser device with SSC fabricated on the InP substrate is composed of a laser region and an SSC region, and the layer thickness and composition of the MQW optical waveguide in the SSC region are the laser region. The feature is that the thickness is gradually reduced and the wavelength is shortened from the boundary toward the end surface of the SSC region. Here, the width of the InP clad 14 is 7 μm, and the width of the MQW active layer 9 is 1.5 μm.

The size of this DFB laser array with SSC is as shown in FIG. 3B, and the period of the array is 15 μm.
Therefore, the total width of the array is about 75 μm, which is sufficiently narrow. as a result,
As the element size, laser region length 400 μm, SSC
Area length 250μm, chip width 300μm
It was possible to achieve the same size as the semiconductor optical device of the chip.

Further, the current injection window is opened only in the DFB laser region, and no current is injected into the SSC region. With respect to the target oscillation wavelength of 1548 nm, the oscillation wavelength of each channel is ch. 1: 1
546.8 nm, ch. 2: 1548.4 nm, ch.
3: 1550 nm, ch. 4: 1551.6 nm, c
h. 5: 1553.2 nm, ch. 6: 1554.8n
m, and the wavelength channel spacing is changed at about 1.6 nm. In this prototype, ch. By using 2, it was possible to obtain a desired oscillation wavelength.

The structure of an optical module equipped with this DFB laser array with SSC will be described with reference to FIG. 3C. An SSC structure is added to the laser array of this embodiment, and the laser array at the light emitting end is added. Since the spot size can be made small, the optical output from the selected channel can be inserted into the single mode optical fiber 2 having a core diameter of 15 μm without using the lens as in the first embodiment described above. Direct binding was possible with about 5 dB.

As described above, the DSC laser array has an SSC.
By adding the structure, the costly lens system can be omitted as compared with the first embodiment, so that the price of the DFB laser optical module for WDM can be further reduced. It was As in the first embodiment described above, the laser light oscillated from each channel is monitored by the light receiving element 3 and is fed back to the temperature of the Peltier element 4, so that the oscillation wavelength can be locked to the target oscillation wavelength. ing. Further, by finely adjusting the positional relationship between the DFB laser array 16 and the optical fiber 2, the laser light of the channel within the allowable range of the target oscillation wavelength is incident on the optical fiber 2.

In the second embodiment, an example of the laser optical module in which the SSC is integrated with the DFB laser is shown, but the SSC and the optical modulator can be replaced with an optical amplifier, a light receiving element or the like.

[Third Embodiment] A WDM modulator-integrated DFB laser optical module according to a third embodiment of the present invention will now be described with reference to FIG. FIG. 4 is a diagram for explaining an electro-absorption modulator integrated DFB laser optical module for WDM according to the third embodiment, and FIG.
Top view, (b) is a sectional view.

The optical module of this embodiment is a DFB laser array 17 with two channels of different wavelength modulators integrated with a minimum array period of 25 μm and a core diameter of 10 μm.
m single mode optical fiber 2, light receiving element 3, Peltier element 4, lens 5, lens support 6, wavelength filter 8,
It is composed of an optical isolator 11. In the case of the present embodiment, the modulator is required to have high-speed modulation characteristics, and the pad length of the electrode 7 of the modulator cannot be made too long in order to reduce the capacity of the modulator. Therefore, the total number of arrays is 2 channels. .

The element size is about 300 μm in width, the DFB region length is 380 μm, and the modulator region length is 150 μm, which is about the conventional one-chip device size. The oscillation wavelength of the laser array is
Change about 2 nm between channels, ch. 1 in 158
0 nm, ch. 2 was 1582 nm. Also, since only one device can cover these two channels,
The diffraction grating period is changed to four types within the wafer surface (that is, as the oscillation wavelength of other array elements, 1590 nm &
1592nm and 1600nm & 1602nm and 1610
nm & 1612 nm), the wavelength range covered by the device is set to about 8 nm for the entire wafer.

In FIG. 4A, ch. The case where 1 is selected is illustrated. In this example, the wavelength redundancy per one element of the array is about twice, but the single mode yield is still large, and the yield improvement of double is large when the extinction characteristic yield of the modulator is taken into consideration, and the modulator integrated DFB for WDM is used. We were able to reduce the price of the laser light module by about 2/3.

Also in this example, the DF of the adopted channel
The oscillation wavelength of the B laser is set to a target oscillation wavelength by monitoring the light intensity passing through the wavelength filter 8 (for example, a dielectric multilayer film wavelength filter) with the light receiving element 3 and feeding it back to the temperature of the Peltier element 4. It can be locked.

In the second embodiment described above, the SSC
As the structure, an example using a layer thickness taper structure in which the layer thickness is tapered is shown. However, in the present embodiment, other SSC structures, for example, one in which the MQW optical waveguide width is changed in a taper shape, and two optical waveguides are used. What is the SSC principle, such as one that uses a waveguide (a method that uses two waveguides in the DFB region to enhance optical coupling and uses only one of the two waveguides in the SSC region to weaken optical coupling)? Even if it is used, it is effective for the optical module using the semiconductor laser array in which the SSC structure is integrated.

In this embodiment, an example of the laser optical module in which the modulator is integrated in the DFB laser is shown. However, as in the second embodiment, the SSC and the optical modulator are replaced by an optical amplifier and a light receiving element. It is also possible to replace with etc.

In the first to third embodiments described above, the example of the semiconductor laser optical module having the oscillation wavelength of about 1.55 to 1.61 μm is shown, but the present invention is not limited to the above embodiments, and other Wavelength band, for example, 2 to 10 μm
Band, 1.48 μm band, 1.3 μm band, 0.2 to 1.0 μ
The m band and the like can be similarly applied to an optical module used for WDM.

Further, in the above-mentioned first to third embodiments, the example of the DFB laser is shown as an example of the longitudinal single mode laser array having the diffraction grating, but the present invention has another mode of different wavelength longitudinal single mode. Laser array, for example, distributed Bragg reflection (DBR) type laser array, distributed reflection (DR) type laser array, gain coupled DFB laser array, complex coupled D
It can also be applied to the case of an FB laser array, a DFB using a diffraction grating of air (dielectric) and a semiconductor, a DBR laser array, and the like.

When the operating temperature of the single-mode laser is changed by the Peltier element to perform the wavelength tunable operation, the maximum wavelength range that can be tuned while suppressing the characteristic deterioration such as the oscillation threshold current of the laser and the optical output. However, it is at most about 2 nm (corresponding to a change temperature range of ± 10 ° C.). That is, when arraying DFB lasers of different wavelengths to increase the wavelength redundancy and cover the deviation of the oscillation wavelength due to a process error, when the oscillation wavelength interval of each laser constituting the array is 2 nm or less, Redundancy and temperature control make it possible to completely cover the desired oscillation wavelength. That is, the present invention is very effective when the wavelength interval between the lasers forming the array is 2 nm or less.

On the other hand, considering the maximum number of arrays, the maximum number of arrays is the array interval × (the number of arrays-1).
However, even if electrodes are wired to the array light source, it is possible to sufficiently increase the size to fit within the size of a conventional single wavelength element chip. Particularly, considering the lens alignment in the optical module, the present invention is very effective when the number of arrays is 8 or less. Also, for the same reason,
The present invention is very effective when the array spacing is 25 μm or less.

[0052]

As described above, according to the present invention,
The production yield of the semiconductor laser for WDM is dramatically improved, and the cost of the optical module can be reduced.

The reason is that the semiconductor laser optical module for WDM according to the present invention is an optical module using a different wavelength single mode laser array, but has a desired oscillation wavelength among the different wavelength semiconductor lasers constituting the array. This is because by using only one laser, the oscillation wavelength that can be covered by the laser chip can be made redundant.

[Brief description of drawings]

FIG. 1 is a diagram for explaining an embodiment of the present invention, in which (a) is a top view and (b) is a cross-sectional view.

2A and 2B are views for explaining the optical module according to the first embodiment of the present invention, in which FIG. 2A is a perspective view and FIG. 2B is a sectional view.

3A and 3B are diagrams for explaining an optical module according to a second embodiment of the present invention, FIG. 3A is a perspective view, FIG. 3B is a top view, and FIG.

4A and 4B are views for explaining an optical module according to a third embodiment of the present invention, FIG. 4A is a top view and FIG. 4B is a sectional view.

[Explanation of symbols]

1 6-Channel DFB Laser Array 2 Optical Fiber 3 Photosensitive Element 4 Peltier Element 5 Lens 6 Lens Support 7 Electrode 8 Wavelength Filter 9 MQW Active Layer 10 Diffraction Grating 11 Optical Isolator 12 p-Electrode 13 n-Electrode 14 InP Clad 15 8 Channel Different wavelength DFB laser array 16 Different wavelength DFB laser array with 6-channel SSC 17 2 channel modulator integrated DFB laser array

Front page continuation (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01S 5/00-5/50 H04B 10/02 H04B 10/28 JISST file (JOIS)

Claims (9)

(57) [Claims] 1. A semiconductor optical device in which a plurality of semiconductor laser light sources are arranged in an array on one chip, an optical fiber for extracting an optical output from the semiconductor optical device, and output light from the semiconductor optical device. A semiconductor laser optical module comprising at least a detecting means for monitoring the temperature of the semiconductor optical device, and an adjusting means for adjusting the oscillation wavelength by controlling the temperature of the semiconductor optical element based on a signal from the detecting means. A semiconductor laser, wherein the laser light sources have different oscillation wavelengths, and only the output light from one semiconductor laser light source selected from the plurality of semiconductor laser light sources is incident on the optical fiber. Optical module. 2. A lens system for condensing laser light emitted from the plurality of semiconductor laser light sources onto the optical fiber is provided between the semiconductor optical element and the optical fiber. The semiconductor laser optical module described. 3. A spot size converter is provided at the output end of each semiconductor laser light source of the semiconductor optical device, and the laser light emitted from the semiconductor laser light source is collected in the optical fiber by the spot size converter. The semiconductor laser light module according to claim 1, which is illuminated. 4. An optical modulator is provided at an output end of each semiconductor laser light source of the semiconductor optical device, and the laser light modulated by the optical modulator is condensed on the optical fiber. The semiconductor laser optical module according to claim 2. 5. The semiconductor laser light module according to claim 1, wherein the semiconductor laser light sources arranged in the array form have an array interval of 25 μm or less. 6. The semiconductor laser optical module according to claim 1, wherein the optical fiber is a single mode optical fiber having a core diameter of 15 μm or less. 7. The semiconductor laser optical module according to claim 1, wherein the oscillation wavelength intervals of the plurality of semiconductor laser light sources are set to 2 nm or less. 8. The semiconductor laser light module according to claim 1, wherein the semiconductor optical device is composed of a semiconductor laser light source integrated in a number of 2 or more and 8 or less. 9. The semiconductor light source constituting the array is any one of a distributed feedback laser, a distributed Bragg reflection laser, and a distributed reflection laser. The semiconductor laser optical module as described in 1.