JP3409786B2 - Exposure mask design method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a display device and the like.
Manufacturing method of plasma display device used for
I do. [0002] 2. Description of the Related Art Conventionally, liquid crystal displays, plasma
Among electrodes used in display devices such as displays
And many electrodes composed of a metal film using a photosensitive material
Commonly used. [0003] This is because a photosensitive material is contained in a metallic material.
Manufacturing using the exposure and development process of photosensitive material
Because it is possible to increase the definition of the pattern
is there. A method of manufacturing an electrode composed of a conventional metal film
One example of the method is shown in FIG. First, for example, Ag or the like is placed on a glass substrate 102.
Coating photosensitive material containing by printing method, laminating method, etc.
A photosensitive metal electrode film 101 is formed (FIG. 1A). Next
Then, the ultraviolet light 103 is applied with the same pattern opening width in the exposure plane.
When irradiated through the exposure mask 104, the photosensitive metal
An exposed portion 106 and a non-exposed portion 105 are formed on the electrode film.
(FIG. 1 (b)). At that time, the photosensitive component in the photosensitive material
It cures from the film surface by light irradiation. Next, add alkali
When development is performed with a developing solution containing only
(FIG. 1 (c)). Exposed area from opening width of exposure mask
The line width is larger at a certain size.
The electrode line width after the development process is
On the other hand, a certain weight gain occurs. Next, when firing
The photosensitive metal electrode film remaining on the substrate shrinks (see FIG. 1).
(D)). Therefore, the opening width of the exposure mask is
Predict the amount of line weight and shrinkage in advance and make the final target electrode
The value considering the wire thickness and shrinkage ratio for the electrode with the line width is the design value.
And designed, and exposed. [0007] However, photosensitive materials have to be
One exposure on the electrode composed of the used metal film
When electrodes with multiple line widths are mixed in the mask,
Thickness of line width at the time of exposure for thick line width and thin line width
And the amount of contraction of the electrode during firing differs, so
It is difficult to obtain electrodes with line widths as measured
There was a problem. [0008] The present invention has been made in view of these disadvantages.
It is composed of a metal laminated film using a photosensitive material.
Electrode with the desired finished line width
The purpose of the present invention is to provide a manufacturing method. [0009] [Means for Solving the Problems] [0010] Further, an exposure mask according to the present invention.How to design
Shall be applied using a material containing at least a photosensitive substance.
After the process, exposure process, development process and baking process, the pattern
Exposure mass used in the exposure step of the manufacturing method of the electrode to be formed
KHow to designAndThe opening width E of the exposure mask is
ExtremeElectrode width after firingToW (E),After the firing process,
Ratio to electrode line width before firing processShrinkage factorToS,
The value obtained by subtracting the mask opening width from the line width after the development processline
Weight gainToTAnd  (Equation 1)Sought based on
RukoExposure mask characterized by the following:Is a design methodThat
Features. [0011] [0012] [0013] [0014] The present inventionDesigned by exposure mask design method
Of the electrode using the exposed exposure maskDepending on the manufacturing method,
It is possible to easily control the finished line width.
When using, multiple electrodes with different line widths are included.
Even if the electrode has a line width as designed easily and stably.
There is an advantage that it can be. [0016] FIG. 3 shows an electrode according to the present embodiment.
It is the schematic which shows a principal part structure and its manufacturing process. First, a negative photosensitive page containing Ag particles is used.
The screen is formed on the glass substrate 302 by using a screen printing method.
90 ° C linearly from room temperature to 90 ° C.
With IR furnace of temperature profile which keeps at a certain time at ℃
After drying, the photosensitive paste is reduced in solvent and the like from the photosensitive paste.
A conductive metal electrode film 301 is formed (FIG. 3A). Next, the photosensitive metal electrode film 301 is coated with an ultraviolet ray.
A line 303 is exposed through an exposure mask 304. This and
Exposure mask having opening width E determined by (Equation 2)
It was used. [0019] (Equation 2) Hereinafter, the reason will be described. Photosensitive material
Coating process and exposure mask using high quality materials
Pattern after exposure, development and baking
As a result of conducting various experiments,
The thickness T at the time is almost constant regardless of the electrode line width.
I found something. This is the film surface of the photosensitive metal electrode film.
Cross-linking reaction proceeds from the surface, polymerization, polymerization, halation
It is considered that this occurs isotropically from the electrode end.
Assuming that the line thickening amount, which is a constant value, is T, the exposure mask
The relationship between the opening width E and the line width D after development is the opening width of the exposure mask.
(Equation 3) regardless of the above. [0021] (Equation 3) Next, the line width after development D and the line width after firing W (E)
Is, under the condition of the same material, the shrinkage depends on the line width.
Although different, the average value S of the shrinkage ratio did not greatly differ depending on the line width.
Therefore, the relationship between the line width D after development and the line width W after firing is as shown in (Equation 4).
Swell. [0023] (Equation 4) Therefore, from the relational expressions of (Equation 3) and (Equation 4),
(Equation 2) can be derived. As an example, an ultraviolet ray 303 is applied with a line width of 20 μm.
Exposure mask 304 including two types of opening widths of 60 μm and 60 μm
Through each line, the line width is 20μm thick
Exposure part A306 having a width of 40 μm and exposure having a line width of 80 μm
The portion B307 and the non-exposed portion 305 are formed.
(B)). The exposure condition at this time was an illuminance of 10 mW /
cm ^Two, Integrated light quantity 300mJ / cm^TwoBetween the mask and the substrate
The distance (hereinafter, referred to as a proxy amount) is 100 μm. Next, 0.4 wt% of sodium carbonate is contained.
When developed with a developer, the non-exposed areas are removed, and the line width is 40 μm.
m and a patterned photosensitive metal electrode film A308
Metal electrode film patterned to a line width of 80 μm
B309 remains (FIG. 3C). Next, a belt-type continuous type having a peak temperature of 593 ° C.
When firing in a firing furnace, the photosensitive metal remaining after development
The resin component in the electrode film evaporates and the glass frit melts.
The line width is reduced to 75% after development and the film thickness is reduced to 40% after development.
Slightly, a metal electrode A310 having a line width of 30 μm and a line width of 60
A μm metal electrode B311 is formed (FIG. 3D). In the manufacturing process based on such a design policy,
When an electrode is manufactured, an electrode containing a plurality of different line widths is
It can be manufactured stably with the desired finished line width. Note that the line thickening amount and shrinkage ratio are determined by the exposure conditions, material
If the material is the same, it is constant regardless of the line width.
Fluctuations within 20% due to variations in film thickness etc.
(2) is considered in consideration of the tolerance of the variation in (Equation 2).
Therefore, it is desirable to design with a relational expression such as (Equation 1).
New In the case of typical line weight and shrinkage,
FIG. 2 shows the relationship between the post-forming line width W (E) and the exposure mask opening width E.
Show. The graph of FIG. 2 does not include the tolerance of the variation.
The graph shows that the mask opening width E actually varies by 20%.
The line width W after firing includes the range of g. Accordingly
The exposure conditions and materials used when determining the line width W after firing
The thickness T and the shrinkage S are derived from the material, film thickness, etc.
The exposure mask opening width E is determined from the graph shown in FIG.
By designing a mask, electrodes with the desired finished line width can be formed.
Can be achieved. In the present embodiment, the line width after firing is
The thickness may not be 30 μm or 60 μm.
It is not limited. In addition, the line weight and shrinkage
May not be 20 μm and 75% in this embodiment.
It is not limited. The photosensitive paste is Ag
Need not be included and is limited to the present embodiment.
There is no. Also, the photosensitive paste does not have to be a negative type.
It is not limited to the present embodiment. Also, the electrode film
The substrate on which is formed need not be a glass substrate.
It is not limited to the form. Also on a substrate such as glass
A transparent electrode or the like may be formed in advance. Ma
Also, the method of applying the photosensitive paste is screen printing.
However, the present invention is not limited to the embodiment of the present invention. Ma
In addition, drying after printing increases linearly from room temperature to 90 ° C.
Temperature profile maintained at 90 ° C for a certain time after
And not necessarily in the IR furnace
It is not limited. Also, the opening width of the exposure mask 2
0 μm and 60 μm are not limited to this embodiment.
It is not specified. The exposure condition is 10 m illuminance.
W / cm^Two, Integrated light quantity 300mJ / cm^Two, Proxy amount 1
What is not limited to 00 μm and is limited to the present embodiment
is not. Also, the developing solution was 0.4 wt% sodium carbonate.
% May not be included and is not limited to the present embodiment.
Absent. The baking after the development is performed at a peak temperature of 593 ° C.
This does not have to be done in the belt and continuous firing furnace.
It is not limited to the embodiment. In addition, the film thickness
The shrinkage ratio may not be 40% and is limited to the present embodiment.
Not something. [0032] As described above, the electrode according to the present invention is
And an electrode having a desired line width
Can be formed with high accuracy.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a configuration of a main part of a conventional electrode and a manufacturing process thereof. FIG. 2 is a view showing a line width after firing and an opening width of an exposure mask at a typical line thickening amount and shrinkage ratio. FIG. 3 is a graph showing the relationship. FIG. 3 is a schematic diagram showing a main part configuration of an electrode according to an embodiment of the present invention and a manufacturing process thereof. Exposure mask 105 Non-exposed part of photosensitive metal electrode film 106 Exposed part of photosensitive metal electrode film 107 Photosensitive metal electrode film 108 after development Photosensitive metal electrode film 301 after baking Photosensitive metal electrode 302 after coating Glass Substrate 303 Ultraviolet light 304 Exposure mask 305 Non-exposed part 306 of photosensitive metal electrode film Exposure part A 307 of photosensitive metal electrode film Exposure part B 308 of photosensitive metal electrode film 308 Photosensitive metal electrode film A 309 after development Photosensitive metal electrode film B 310 after development Metal electrode A 311 after firing Metal electrode B after firing

Continuation of the front page (51) Int.Cl. ⁷ Identification symbol FI // G03F 7/40 501 H01L 21/88 B (72) Inventor Mitsuhiro Otani 1006 Ojidoma, Kazuma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. 72) Inventor Shinya Fujiwara 1006 Kadoma, Kazuma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Eiki Marunaka 1006 Odaka, Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. 1006 Kazuma Kadoma, Kadoma City, Osaka Pref. Matsushita Electric Industrial Co., Ltd. (56) References JP-A-3-163727 (JP, A) JP-A-11-277988 (JP, A) JP-A-4-136853 ( JP, A) JP-A-2000-82400 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G03F 1/00-1/16 G03F ⁷ /20-7/24 H01J 11/00 -17/64

Claims (1)

(57) [Claim 1] A method of manufacturing an electrode which is patterned using a material containing at least a photosensitive substance through a coating step, an exposure step, a development step, and a baking step. of a design method for an exposure mask used in the exposure step, the opening width E of the exposure mask
However, the electrode width after firing the electrode is W (E), the shrinkage ratio which is the ratio of the electrode line width after the firing step to the electrode line width before the firing step is S, and the mask opening width is determined from the line width after the developing step. When T is the amount of line thickening that is the subtracted value, based on (Equation 1)
Design method of exposure mask according to claim that you are required. (Equation 1)