JP3411267B2 - Pellicle for photomask, photomask provided with pellicle, method of manufacturing semiconductor device including photoengraving process using photomask - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pellicle for a photomask, a photomask provided with the pellicle, and a method for manufacturing a semiconductor device including a photolithography process using the photomask, and more particularly to shortening the wavelength of exposure light. Manufacture of photomask pellicle, photomask, and semiconductor device
Regarding the manufacturing method .

[0002]

2. Description of the Related Art FIG. 14 is a schematic explanatory view showing a lithography process of a conventional semiconductor device. In FIG. 14, the wafer 8 is arranged below the glass photomask plate 5 with the optical lens 7 interposed therebetween. Glass photomask plate 5
Is provided with a pattern for transfer by a light shielding film. When the foreign matter 9 adheres to the pattern formation surface of the glass photomask plate 5 as described above, an image of the foreign matter 9 is formed on the wafer 8.

As a method for avoiding the above-mentioned inconvenience caused by the foreign matter 9, as shown in FIG. 15, a pellicle 4 is provided on the pattern forming surface of the glass photomask plate 5, and the foreign matter 9 is attached to the pattern forming surface. Methods to prevent it are known. The pellicle 4 has a pellicle frame 3 made of, for example, aluminum, and a transparent pellicle film 1 made of, for example, an organic polymer and having a film thickness of 600 to 1000 nm. The pellicle 4 is fixed by bonding the pellicle frame 3 to the glass photomask plate 5 with an adhesive.

The pellicle 4 is provided so that a space of about 6 mm is secured between the pattern forming surface of the glass photomask plate 5 and the pellicle film 1. In this case, even if the foreign matter 9 adheres to the surface of the pellicle film 1, the image of the foreign matter 9 is defocused and is not formed on the wafer 8. For this reason,
By using the pellicle 4, it is possible to effectively avoid the exposure failure due to the adhesion of the foreign matter 9.

By the way, in recent years, with the miniaturization of patterns in the semiconductor process, the wavelength of exposure light has been shortened. Currently, the light source for exposure has a wavelength of 248 nm.
The KrF excimer laser of (1) is mainly used, and subsequently, the ArF excimer laser having a wavelength of 193 nm which is a light beam in the vacuum ultraviolet region is used. Furthermore, studies have also been conducted on using an F ₂ excimer laser beam having a wavelength of 157 nm as an exposure light source.

However, an organic polymer capable of sufficiently transmitting the light beam of the F ₂ excimer laser does not yet exist at present, and it is considered that its synthesis is difficult.
Therefore, when the light beam of the F ₂ excimer laser is used as the exposure light source, the conventional pellicle 4 using the organic polymer for the pellicle film 1 cannot be used.

A transparent inorganic substance (for example, quartz glass) having a film thickness of 100 to 1000 μm is promising as a material forming the pellicle film 1 for using the light beam of the F ₂ excimer laser as an exposure light source. A transparent inorganic substance such as quartz glass allows the light beam of the F ₂ excimer laser to sufficiently pass therethrough, and does not deteriorate due to a photolysis reaction or the like due to the light beam. As described above, the transparent inorganic substance such as quartz glass is used for the pellicle film 1 that copes with the exposure light having a short wavelength.
It has suitable properties as a material.

[0008]

However, when the pellicle film 1 is formed of a transparent inorganic material such as quartz glass, the following problems occur. That is, in order to ensure a uniform film thickness for transparent inorganic substances such as quartz glass, 1
A film thickness of 00 to 1000 μm becomes the limit of polishing. When the pellicle film 1 is made of a transparent inorganic material such as quartz glass having a film thickness of 100 to 1000 μm, the pellicle film 1 is bent by its own weight, and aberration is caused due to the bending.

Even when the pellicle film 1 is made of an organic polymer, it is considered that the pellicle film 1 is bent by its own weight. In this case, the pellicle film 1 has a thickness of 600 to 100.
Since it is as thin as 0 nm, the deflection is so small that it can be ignored. Therefore, the aberration due to the deflection can be ignored. On the other hand, when the pellicle film 1 is made of a transparent inorganic material, a large deflection occurs due to its own weight. Since the aberration increases in proportion to both the thickness and the flexure, the aberration cannot be ignored in this case, which causes deterioration of the imaging performance. It is very difficult to correct the aberration due to the deflection of the pellicle film by the exposure device. Therefore, when the pellicle film 1 is made of a transparent inorganic material such as quartz glass, it is necessary to eliminate the deflection due to its own weight.

The present invention has been made to solve the above problems, and has a photomask having a structure in which a pellicle film is supported by beams or columns made of a material having a small ductility or malleability and high hardness. It is a first object to provide a pellicle for use in a car. A second object of the present invention is to provide a photomask provided with the above pellicle. A third object of the present invention is to provide an exposure method using the above photomask. A fourth object of the present invention is to provide a semiconductor device manufactured by using the above exposure method.

[0011]

The invention according to claim 1 is
A pellicle for a photomask attached to a pattern forming surface of a translucent photomask plate, wherein a predetermined distance is secured between the pellicle frame fixed to the pattern forming surface and the pattern forming surface. the includes a translucent pellicle membrane supported in the pellicle frame, and a deflection prevention member for supporting the pellicle film so as to suppress the deflection of the pellicle membrane, the deflection prevention member
Is a beam that directly or indirectly supports the pellicle membrane.
And the beam is convex on the side of the pellicle membrane.
Has a zigzag shape and supports the pellicle membrane from below.
It is characterized by including an arched beam .

According to a second aspect of the present invention, there is provided a pellicle for a photomask which is attached to a pattern forming surface of a translucent photomask plate, wherein the pellicle frame is fixed to the pattern forming surface, and the pattern forming surface. A translucent pellicle film supported by the pellicle frame so that a predetermined distance is secured, and a deflection preventing member supporting the pellicle film so as to suppress deflection of the pellicle film, the deflection preventing member extends to a direction perpendicular the longitudinal direction with respect to the pellicle film, the peri
It is in the area surrounded by the frame and the transfer pattern is
Areas or patterns that do not affect the
A column for supporting the pellicle membrane from above or below is provided in the hollow region .

According to a third aspect of the present invention, there is provided a pellicle for a photomask which is attached to a pattern forming surface of a translucent photomask plate, wherein the pellicle frame is fixed to the pattern forming surface, and the pattern forming surface. A translucent pellicle film supported by the pellicle frame so that a predetermined distance is secured, and a deflection preventing member supporting the pellicle film so as to suppress deflection of the pellicle film, The deflection preventing member includes a beam that directly or indirectly supports the pellicle film, and the beam is
It is opaque and has a cross-sectional shape of an acute-angled isosceles triangle that is easily defocused .

According to a fourth aspect of the present invention, there is provided a pellicle for a photomask which is attached to a pattern forming surface of a translucent photomask plate, wherein the pellicle frame is fixed to the pattern forming surface, and the pattern forming surface. A translucent pellicle film supported by the pellicle frame so that a predetermined distance is secured, and a deflection preventing member supporting the pellicle film so as to suppress deflection of the pellicle film, The anti-deflection member includes a beam embedded in the pellicle film, and the beam is opaque.
In addition, it has a rhombic cross-sectional shape that is easily defocused .

The invention of claim 5 is the same as that of claims 1 to 4.
The pellicle for a photomask according to any one of claims 1 to 4,
The anti-deflection member is more ductile or flexible than the pellicle film.
Is characterized by having a low malleability and a high hardness .

The invention according to claim 6 is the same as that of claims 1 to 5.
The pellicle for a photomask according to any one of claims 1 to 4,
The thickness of the deflection preventing member is 300 μm or less .

The invention according to claim 7 is the pellicle for a photomask according to any one of claims 1 to 6, wherein the pellicle film has a thickness of 100 μm or more and 1000 μm or less.
It is characterized by being a plate of a transparent inorganic material having a thickness .

An eighth aspect of the present invention is a photomask including a translucent photomask plate having a pattern forming surface, and a pellicle attached to the translucent photomask plate so as to cover the pattern forming surface. The pellicle is a photomask pellicle according to any one of claims 1 to 7.

According to a ninth aspect of the present invention, a semiconductor device is manufactured.
A method using the photomask according to claim 8,
Using light in the vacuum ultraviolet region with a wavelength of 160 nm or less as a light source,
It is characterized by including a photolithography process of exposing a semiconductor wafer.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. It should be noted that elements common to each drawing are denoted by the same reference numerals, and redundant description will be omitted.

Embodiment 1. Embodiments of the present invention will be described below with reference to the drawings. Figure 1
FIG. 1A shows a plan view of photomask 10 according to the first embodiment of the present invention. In addition, FIG. 1B is shown in FIG.
A cross-sectional view obtained by cutting the photomask 10 along the line AA 'is shown.

As shown in FIGS. 1A and 1B, the photomask 10 of this embodiment includes a glass photomask plate 5 and a pellicle 4. The glass photomask plate 5 has a transfer pattern formed of a light-shielding film on the surface on the pellicle 4 side. The pellicle 4 includes a pellicle frame 3 and a pellicle film 1.

The pellicle frame 3 is made of a material such as aluminum and is adhered to the glass photomask plate 5 with an adhesive. The pellicle film 1 is made of a plate-like transparent inorganic material such as quartz glass, and is bonded to the pellicle frame 3. In the present embodiment, a transparent inorganic substance such as quartz glass is used in a film thickness of 100 to 1000 μm.
The pellicle film 1 is formed by polishing so that the variation in film thickness is 5 nm or less.

A rod-shaped beam 2 is attached to the back surface of the pellicle film 1, that is, the surface not facing the glass photomask plate 5. The beam 2 is made of an inorganic substance (for example, ceramic) or metal having low ductility or malleability and high hardness, and has a thickness of 300 μm or less. In this embodiment, the beams 2 are arranged on two diagonal lines of the pellicle film 1 as shown in FIG. In addition, in the present embodiment, the beam 2 has the structure shown in FIG.
As shown in (enlarged view of cross section of beam 2), it has a square cross section.

According to the above-mentioned structure, by supporting the pellicle film 1 with the beam 2, it is possible to suppress the deflection of the pellicle film 1 due to its own weight and solve the aberration due to the deflection. Further, since the pellicle film 1 is made of a transparent inorganic material such as quartz glass, it is possible to secure a sufficiently high transmittance for the light beam of the F ₂ excimer laser, and the pellicle film 1 due to a photolysis reaction or the like. Can be effectively prevented. Further, due to the original characteristics of the pellicle 4, the beam 2 supporting the pellicle film 1 is defocused and its image is not formed on the wafer. Therefore, according to the photomask 10 of the present embodiment, highly accurate pattern transfer can be realized while forming the pellicle film 1 with a transparent inorganic material.

By the way, in the first embodiment described above, the beam 2 is arranged on the back surface (the lower surface in FIG. 1B) of the pellicle film 1, but the arrangement of the beam 2 is not limited to this. Not a thing. That is, the beams 2 may be arranged on the upper surface of the pellicle film 1, both on the upper surface and the lower surface thereof, and further, may be embedded inside the pellicle film 1.

Further, in the first embodiment described above, the shape of the beam 2 is square, but the shape is not limited to this. For example, the cross-sectional shape of the beam 2 is as shown in FIG.
As shown in FIG. 3A, a rectangle, as shown in FIG. 3B, an acute-angled isosceles triangle, and as shown in FIG.
It may have a circular shape as shown in FIG. 3D or a rhombus as shown in FIG.

FIG. 4 shows a state in which the cross section of the beam 2 is rectangular and the beam 2 is adhered to the back surface of the pellicle film 1. As shown in FIG. 4, when the beam 2 is bonded to the pellicle film 1 so that the longitudinal direction of the rectangle extends vertically, the rigidity of the beam 2 in the direction of supporting the deflection of the pellicle film 1 can be increased. Therefore, according to the configuration shown in FIG. 4, the deflection of the pellicle film 1 can be made smaller than in the case where the beam 2 has a square cross-sectional shape.

FIG. 5 shows a state in which the cross-sectional shape of the beam 2 is an acute-angled isosceles triangle, and the beam 2 is bonded to the back surface of the pellicle film 1. According to the structure shown in FIG. 5, the image of the beam 2 itself is more likely to be defocused than when the beam 2 has a square cross section. Therefore, when this structure is used, the width of the beam 2 can be made larger and the deflection of the pellicle film 1 can be made smaller than when the beam 2 has a square cross section.

FIG. 6 shows a state in which the cross section of the beam 2 is rhombic and the beam 2 is embedded in the pellicle film 1. The structure shown in FIG. 6 can be formed by preliminarily embedding the beam 2 inside a plate-like transparent inorganic substance such as quartz glass, and polishing the transparent inorganic substance so that the beam 2 remains inside. it can. As shown in FIG. 6, when the cross-sectional shape of the beam 2 is a rhombus, the image of the beam 2 itself is more likely to be defocused than when the shape is a square. Therefore, when this structure is used, the width of the beam 2 can be made larger and the deflection of the pellicle film 1 can be made smaller than when the beam 2 has a square cross section.

Further, in the first embodiment described above, the beams 2 are arranged on two diagonal lines of the pellicle film 1, but the number of the beams 2 to be attached to the pellicle film 1 and the attaching method are not limited to this. Not something that is done. For example, beam 2
As shown in FIG. 7, the pellicle film 1 may be attached to the pellicle film 1 in a mesh shape so as not to affect the transmittance of the exposure light. According to the structure in which the beams 2 are attached in a mesh shape, the force by which the beams 2 support the pellicle film 1 is increased, and the deflection of the pellicle film 1 can be made smaller than in the case where the beams 2 are arranged diagonally. . Moreover, with such a structure, it is possible to obtain an effect that it is possible to effectively prevent scattering of fragments when the pellicle film 1 is damaged.

Embodiment 2. Next, with reference to FIG. 8, a photomask 20 according to the second embodiment of the present invention will be described. FIG. 8 shows a cross-sectional view of the photomask 20 of this embodiment. The photomask 20 is
Like the photomask 10 of the first embodiment, a glass photomask plate 5 and a pellicle 4 are provided. Pellicle 4
Has a larger pellicle frame 3 than that in the first embodiment.

In this embodiment, the pellicle film 1 is attached at a predetermined position between the upper end and the lower end of the pellicle frame 3 as shown in FIG. This pellicle film 1 is
It is supported by an arch-shaped beam 2 arranged below it. Both ends of the arch-shaped beam 2 are fixed to the lower end of the pellicle frame 3. The central portion of the beam 2 may be adhered to the pellicle film 1 or may be simply in contact with the pellicle film 1.

According to the pellicle 4 of this embodiment, a large force can be generated in the arch-shaped beam 2 attached to the lower part of the pellicle film 1 in the direction of supporting the pellicle film 1. Therefore, by attaching the pellicle 4 to the pattern forming surface of the glass photomask plate 5 with an adhesive,
Deflection of the pellicle film 1 can be suppressed while protecting the pattern formation surface.

In the present embodiment, the cross-sectional shape of the beam 2 is any of square, rectangular, acute-angled isosceles triangle, trapezoid, circle, or rhombus, as in the case of the first embodiment. Is also good. Moreover, the arrangement of the arch-shaped beam 2 is
Similar to the case of the first embodiment, the arrangement may be aligned with the diagonal line of the pellicle film 1 or may be a mesh-like arrangement.

Embodiment 3. Next, with reference to FIG. 9, a photomask 30 according to the third embodiment of the present invention will be described. FIG. 9 shows a cross-sectional view of the photomask 30 of this embodiment. The photomask 30 is
Similar to the photomask 20 of the second embodiment, the pellicle frame 3 larger than that of the first embodiment and the pellicle film 1 attached at the intermediate position thereof are provided.

Below the pellicle film 1, an arch-shaped beam 2 is provided.
And a linear beam 2 are arranged. A plurality of arch-shaped beams 2 are provided on the straight-shaped beam 2, and each arch-shaped beam 2 has its both ends fixed to the lower end of the pellicle frame 3 or the straight-shaped beam 2. According to such a structure, as compared with the case of the second embodiment, the arch-shaped beam 2
The number of points supporting the pellicle film 1 can be increased. Therefore, according to the photomask 30 of the present embodiment, the deflection of the pellicle film 1 can be further reduced as compared with the photomask 20 of the second embodiment.

In the structure of this embodiment, the linear beam 2
Are arranged at positions largely separated from the pattern forming surface of the glass photomask plate 5. Therefore, the straight beam 2
Are more defocused than the arched beam 2.
Therefore, the linear beam 2 can be made thicker than the beam 2 in the first or second embodiment.

In the third embodiment described above, the arch-shaped beam 2 is supported by the linear beam 2, but the beam 2 that supports the arch-shaped beam 2 is not limited to the linear type. That is, the arch-shaped beam 2 supporting the pellicle film 1 may be further supported by the arch-shaped beam 2.

Incidentally, in the present embodiment, the cross-sectional shape of the beam 2 is any of square, rectangle, acute-angled isosceles triangle, trapezoid, circle, or rhombus as in the case of the first or second embodiment. It may be. Further, the arrangement of the arch-shaped beams 2 may be the arrangement aligned with the diagonal line of the pellicle film 1 or the mesh-shaped arrangement, as in the case of the first embodiment.

Fourth Embodiment Next, with reference to FIG. 10, a photomask 40 according to the fourth embodiment of the present invention will be described. FIG. 10A shows a plan view of the photomask 40 of this embodiment. Also, FIG.
0B shows a cross-sectional view obtained by cutting the photomask 40 along the line AA ′ shown in FIG.

As shown in FIG. 10B, in the photomask 40 of this embodiment, columns 6 are arranged between the pellicle film 1 and the pattern forming surface of the glass photomask plate 5. The pillar 6 is a rod-shaped member having a thickness of 300 μm or less, which is made of an inorganic material (for example, ceramic) or metal having low ductility or malleability and high hardness. Both ends of the pillar 6 are adhered to the pattern forming surface of the glass photomask plate 5 and the pellicle film 1, respectively. According to such a structure, the deformation of the pellicle film 1 is restricted by the columns 6, so that the deflection of the pellicle film 1 can be suppressed sufficiently small.

The bonding portion between the pattern forming surface of the glass photomask plate 5 and the pillar 6 is a region that does not affect the transfer pattern, such as a scribe target region, or a region where a large pattern such as an alignment mark is to be formed. Is set to. Therefore, even if the image of the pillar 6 is transferred onto the wafer, the characteristics of the device are not affected at all. As described above, the pellicle film 1 made of a transparent inorganic material such as quartz glass and the pattern surface of the glass photomask plate 5 are connected by the pillars 6 to protect the pattern surface of the glass photomask plate 5, The deflection of the pellicle film 1 can be solved.

By the way, FIG. 10 showing the photomask 40 of the fourth embodiment described above shows a structure in which nine pillars 6 are arranged on the pellicle film 1, but the number of pillars 6 is equal to this. The number is not limited to the above, and the number may be arbitrarily determined. Further, in FIG. 10, the cross-sectional shape of the pillar 6 is shown as a circle, but the shape is not limited to a circle, and can be any shape.

Embodiment 5. Next, with reference to FIG. 11, a photomask 50 according to the fifth embodiment of the present invention will be described. FIG. 11A shows a plan view of the photomask 50 of this embodiment. Also, FIG.
1B is a cross-sectional view obtained by cutting the photomask 50 along the line AA ′ shown in FIG.

Like the photomask 20 of the second embodiment or the photomask 30 of the third embodiment, the photomask 50 is attached to the pellicle frame 3 which is larger than that of the first embodiment, and the intermediate position thereof. The pellicle film 1 is provided. A beam 2 for supporting the pellicle film 1 is fixed to the lower end of the pellicle frame 3, and a column 6 is attached between the beam 2 and the pellicle film 1.

According to the above structure, the deformation of the pellicle film 1 is restricted by the beams 2 and the columns 6, so that the pellicle film 1 is prevented.
It is possible to suppress the flexure of the flexure sufficiently small. Also,
According to the structure of the present embodiment, a sufficient distance can be secured between the pattern forming surface of the glass photomask plate 5 and the pillar 6, so that the pattern of the pillar 6 is not imaged on the wafer. Therefore, in the photomask 50 of this embodiment, the fourth embodiment
It is possible to secure a high degree of freedom regarding the arrangement of the pillars 6 as compared with the photomask 40 of FIG.

By the way, FIG. 11 showing the photomask 50.
2 shows two linear beams 2 and six columns 6 arranged on them, but the number of beams 2 and columns 6 or the shape of beam 2 is not limited to this. Not something that is done. That is, the number of beams 2 and columns 6 may be arbitrarily determined, and
The shape of the beam 2 may be arched as well as linear.

Sixth Embodiment Next, with reference to FIG. 12, a photomask 60 according to the sixth embodiment of the present invention will be described. FIG. 12A shows a side view of the photomask 60 of this embodiment. Also, FIG.
2B shows a cross-sectional view obtained by cutting the photomask 60 along the line AA ′ shown in FIG.
Further, FIG. 12C shows a cross-sectional view obtained by cutting the photomask 60 along the line BB ′ shown in FIG.

Like the photomask 20 of the second embodiment, the photomask 60 has a pellicle frame 3 and an arched beam 2 which are larger than those of the first embodiment. In the present embodiment, the arch-shaped beam 2 is configured such that the portion in contact with the pellicle frame 3 is thicker than the portion in contact with the pellicle film 1. In other words,
In the present embodiment, the arch-shaped beam 2 is configured such that its end portion is thicker than its center portion (see FIGS. 12B and 12C).

According to this structure, the beam 2 is provided with rigidity sufficient to support the pellicle film 1, and the thickness of the beam 2 near the contact point with the pellicle film 1 can be sufficiently reduced. Therefore, according to the photomask 60 of the present embodiment, it is possible to effectively prevent the pellicle film 1 from bending while sufficiently suppressing the influence of the beam 2 on the photolithography.

Embodiment 7. Next, with reference to FIG. 13, a photomask 70 according to the seventh embodiment of the present invention will be described. FIG. 13A shows a plan view of the photomask 70 of this embodiment. Also, FIG.
3B is a cross-sectional view obtained by cutting the photomask 70 along the line AA ′ shown in FIG.

Like the photomask 10 of the first embodiment, the photomask 70 has a beam 2 for supporting the pellicle film 1 under the pellicle film 1. In the present embodiment, the beam 2 is S in plan view as shown in FIG.
It is formed to have a letter shape.

According to such a beam 2, it is possible to secure greater rigidity in the direction of supporting the pellicle film 1 as compared with a linear beam. Therefore, the photomask 7 of the present embodiment
According to 0, the width of the pellicle film 1 can be effectively prevented while sufficiently suppressing the influence of the beam 2 on the photolithography by sufficiently reducing the width.

In the sixth and seventh embodiments described above,
The cross section of the beam 2 is square or rectangular, but the shape is not limited thereto. In Embodiments 6 and 7, the shape of the beam 2 may be another shape such as an isosceles triangle.

By the way, in the first to seventh embodiments described above, the width of the beam 2 and the thickness of the pillar 6 are, in principle, 300 μm.
It is set to m or less. The reason why the width of the beam 2 and the thickness of the pillar 6 are set to 300 μm or less will be described below.

Aperture number NA (Nu of the projection lens on the wafer side)
(Americal Aperture) is NA, the height of the pellicle frame is h, the illumination system coherency is σ, and the magnification of the optical lens 7 is 1 / M, the illumination luminous flux diameter r on the pellicle film 1 is approximated by the following equation. . r ≒ 2 · h · NA · σ · (1 / M)

When the beam 2 and the column 6 are attached to the pellicle film 1, the illumination light flux on the pellicle film 1 is changed to those beams 2.
Part of the light is blocked by the column 6 and the pattern portion corresponding to the illumination luminous flux causes a decrease in illuminance Δ. This illuminance decrease Δ is
When the diameter of the column 6 is a, it is expressed by the following equation. Δ = (a / r) ²

Therefore, the allowable value of the thickness of the column 6 attached to the pellicle film 1 is expressed by the following equation. a = 2 · h · NA · σ · (1 / M) · √Δ

In the above equation, NA = 0.8, σ = 1.0, M
= 4, h = 6.3 mm, and Δ = 1.5%, a = 3
It becomes 09 μm. Therefore, if the width of the beam 2 and the thickness of the column 6 attached to the pellicle film 1 are set to 300 μm or less, the column 6
Image can be prevented from affecting the image on the wafer.

[0061]

According to the present invention, the pellicle film has its own weight.
Enables high-precision photoengraving while preventing bending
can do.

[Brief description of drawings]

FIG. 1 is a plan view and a sectional view of a photomask according to a first embodiment of the present invention.

FIG. 2 is an enlarged view showing a main part of the photomask shown in FIG.

FIG. 3 is a diagram showing a modified example of the cross-sectional shape of a beam that can be used in the photomask shown in FIG.

FIG. 4 is an enlarged view showing a main part of a photomask configured using a beam having a cross-sectional shape shown in FIG.

5 is an enlarged view of a main portion of a photomask formed using a beam having a cross-sectional shape shown in FIG.

FIG. 6 is an enlarged view of a main part of a photomask configured using a beam having a cross-sectional shape shown in FIG.

FIG. 7 is a diagram showing another example of arrangement of beams that can be applied to the photomask of the first embodiment.

FIG. 8 is a sectional view of a photomask according to a second embodiment of the present invention.

FIG. 9 is a sectional view of a photomask according to a third embodiment of the present invention.

FIG. 10 is a plan view and a sectional view of a photomask according to a fourth embodiment of the present invention.

FIG. 11 is a plan view and a sectional view of a photomask according to a fifth embodiment of the present invention.

FIG. 12 is a side view and a sectional view of a photomask according to a sixth embodiment of the present invention.

FIG. 13 is a plan view and a side view of a photomask according to a seventh embodiment of the present invention.

FIG. 14 is a diagram (No. 1) for explaining a conventional lithography process.

FIG. 15 is a diagram (No. 2) for explaining a conventional lithography process.

[Explanation of symbols]

1 Pellicle Film 2 Beam 3 Pellicle Frame 4 Pellicle 5 Glass Photomask Plate 6 Pillar 7 Optical Lens 8 Wafer 9 Foreign Material 10; 20; 30; 40; 50; 60; 70 Photomask

Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) G03F 1/00-1/16

Claims (9)

(57) [Claims] 1. A photomask pellicle attached to a pattern forming surface of a translucent photomask plate, wherein a predetermined distance is provided between the pellicle frame fixed to the pattern forming surface and the pattern forming surface. A transparent pellicle film supported by the pellicle frame so as to be secured, and a deflection preventing member supporting the pellicle film so as to suppress deflection of the pellicle film, wherein the deflection preventing member is A beam that directly or indirectly supports the pellicle film is included, and the beam has an arched shape that is convex toward the pellicle film side, and includes an arched beam that supports the pellicle film from below. A pellicle for a photomask, which is characterized in that 2. A pellicle for a photomask attached to a pattern forming surface of a translucent photomask plate, wherein a predetermined distance is provided between the pellicle frame fixed to the pattern forming surface and the pattern forming surface. A transparent pellicle film supported by the pellicle frame so as to be secured, and a deflection preventing member supporting the pellicle film so as to suppress deflection of the pellicle film, wherein the deflection preventing member is The pellicle frame extends in a direction perpendicular to the pellicle film and extends in the pellicle frame.
It is within the enclosed area and affects the transfer pattern.
A pellicle for a photomask, comprising a column for supporting the pellicle film from above or below in a region which cannot be formed or in a region where a pattern is to be formed . 3. A pellicle for a photomask attached to a pattern forming surface of a translucent photomask plate, wherein a predetermined distance is provided between the pellicle frame fixed to the pattern forming surface and the pattern forming surface. A transparent pellicle film supported by the pellicle frame so as to be secured, and a deflection preventing member supporting the pellicle film so as to suppress deflection of the pellicle film, wherein the deflection preventing member is A beam that directly or indirectly supports the pellicle membrane, the beam being opaque;
A pellicle for a photomask, which has a cross-sectional shape of an isosceles triangle with an acute angle that is easily defocused . 4. A photomask pellicle attached to a pattern forming surface of a translucent photomask plate, wherein a predetermined distance is provided between the pellicle frame fixed to the pattern forming surface and the pattern forming surface. A transparent pellicle film supported by the pellicle frame so as to be secured, and a deflection preventing member supporting the pellicle film so as to suppress deflection of the pellicle film, wherein the deflection preventing member is A beam embedded in the pellicle film, the beam being opaque and defocusing;
A pellicle for a photomask, which has a rhombic cross-sectional shape that is easily broken. 5. The flexure prevention member is made of a material that is less ductile or malleable than the pellicle film and has a high hardness, as compared with the pellicle film. The pellicle for the photomask described. 6. The thickness of the deflection preventing member is 300 μm.
One of the claims 1 to 5, characterized in that
A pellicle for a photomask according to the item. 7. The pellicle film has a thickness of 100 μm or more and 10 or more.
7. The pellicle for a photomask according to claim 1, wherein the pellicle is a transparent inorganic material plate having a film thickness of 00 μm or less. 8. A photomask including a translucent photomask plate having a pattern forming surface, and a pellicle attached to the translucent photomask plate so as to cover the pattern forming surface, wherein the pellicle comprises: A photomask, which is the pellicle for a photomask according to any one of claims 1 to 7. 9. A photomask according to claim 8, wherein
Using light in the vacuum ultraviolet region with a wavelength of 160 nm or less as a light source,
A method of manufacturing a semiconductor device, comprising a photolithography process of exposing a semiconductor wafer.