JP3411294B2 - Method and apparatus for preventing adhesion of by-products in gas processing by electron beam irradiation - Google Patents
Method and apparatus for preventing adhesion of by-products in gas processing by electron beam irradiationInfo
- Publication number
- JP3411294B2 JP3411294B2 JP50868598A JP50868598A JP3411294B2 JP 3411294 B2 JP3411294 B2 JP 3411294B2 JP 50868598 A JP50868598 A JP 50868598A JP 50868598 A JP50868598 A JP 50868598A JP 3411294 B2 JP3411294 B2 JP 3411294B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reactor
- duct
- reaction
- contact portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000006227 byproduct Substances 0.000 title claims description 48
- 238000010894 electron beam technology Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 15
- 239000007789 gas Substances 0.000 claims description 124
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 54
- 238000005192 partition Methods 0.000 claims description 49
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 47
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 32
- 238000001816 cooling Methods 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 239000000498 cooling water Substances 0.000 claims description 20
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910021529 ammonia Inorganic materials 0.000 claims description 16
- 229910052815 sulfur oxide Inorganic materials 0.000 claims description 14
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 description 10
- 238000009833 condensation Methods 0.000 description 9
- 230000005494 condensation Effects 0.000 description 9
- 230000001678 irradiating effect Effects 0.000 description 7
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 6
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 6
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 6
- 235000011130 ammonium sulphate Nutrition 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 238000002485 combustion reaction Methods 0.000 description 4
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 description 4
- 239000000446 fuel Substances 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012717 electrostatic precipitator Substances 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 239000008235 industrial water Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000004065 wastewater treatment Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Treating Waste Gases (AREA)
Description
【発明の詳細な説明】
技術分野
本発明は電子ビームの照射による排ガス等のガス処理
方法及び装置に係り、特に硫黄酸化物及び／又は窒素酸
化物を含むガスに、アンモニアを添加するとともに電子
ビームを照射することによって、硫黄酸化物及び／又は
窒素酸化物を除去するガス処理における副生物の付着防
止方法及び装置に関する。TECHNICAL FIELD The present invention relates to a method and apparatus for treating a gas such as exhaust gas by irradiation with an electron beam, and more particularly to adding ammonia to a gas containing sulfur oxides and / or nitrogen oxides and electron beam irradiation. The present invention relates to a method and apparatus for preventing by-products from adhering in a gas treatment for removing sulfur oxides and / or nitrogen oxides by irradiating with.
背景技術
経済の発展につれてエネルギー需要が高まる中、エネ
ルギー源として石炭、石油等の化石燃料に依然として依
存し続けている。しかしながら、化石燃料を燃焼する際
に生じる有害物質や汚染物質は、環境汚染の原因となっ
ている。大気中に汚染物質が拡散して環境汚染が進行す
るのを防ぐため、発電プラントのような燃料燃焼プラン
トのための排ガス処理システムの技術開発が進められて
いる。しかしながら、従来の排ガス処理システムにおい
ては、様々な制御を要する装置が必要であること、大規
模な汚水処理システムが不可欠であることなど、今なお
改善されるべき問題がいくつか残っている。BACKGROUND ART As energy demand increases with the development of the economy, fossil fuels such as coal and oil continue to be relied on as energy sources. However, harmful substances and pollutants generated when burning fossil fuels cause environmental pollution. In order to prevent pollutants from diffusing into the atmosphere and causing environmental pollution, technological development of an exhaust gas treatment system for a fuel combustion plant such as a power plant is under way. However, in the conventional exhaust gas treatment system, there are still some problems to be improved, such as the need for various control devices and the indispensability of a large-scale wastewater treatment system.
上述の問題を解決するために、ボイラ等の燃料燃焼プ
ラントからの排ガスを電子ビームを利用して処理する排
ガス処理システムが開発されている。このシステムにお
いては、硫黄酸化物及び／又は窒素酸化物を含むガスに
アンモニアを注入し、電子ビームを照射することによっ
て、硫黄酸化物及び／又は窒素酸化物を反応副生物（以
下、副生物という）として除去するようにしている。し
かしながら、硫安及び／又は硝安を主成分とする副生物
は処理されたガスが通過する通路に付着する傾向があ
る。このような電子ビームプロセスにおいて硫安及び／
又は硝安を主成分とする副生物の付着を防止する種々の
試みがなされていた。その試みの一つは、特公平３−65
211号に開示されているように、電子ビーム照射後のガ
ス流速を10m/s以下、好ましくは5m/s以下とすることで
ある。他の試みは、特開平７−31844号に開示されてい
るように、電子ビーム照射領域から副生物捕集領域まで
のガス接触部を80℃〜150℃、好ましくは100℃〜150℃
にすることである。前者においては、電子ビーム照射領
域の下流側の装置及び／又はダクトの断面積が大きくな
り、設備が大型化する傾向があるという欠点がある。後
者においては、ガス接触部を昇温するための熱源が必要
となるという問題がある。さらに、いずれの方法によっ
ても、副生物の付着は完全に防止されず、また、一旦副
生物の付着が始まると、付着量は加速度的に増大すると
いう傾向があった。In order to solve the above problem, an exhaust gas treatment system has been developed which treats exhaust gas from a fuel combustion plant such as a boiler using an electron beam. In this system, by injecting ammonia into a gas containing sulfur oxides and / or nitrogen oxides and irradiating it with an electron beam, sulfur oxides and / or nitrogen oxides are reacted by-products (hereinafter referred to as by-products). ) Is removed. However, ammonium sulfate and / or ammonium nitrate-based by-products tend to adhere to the passages through which the treated gas passes. In such electron beam process, ammonium sulfate and / or
Alternatively, various attempts have been made to prevent the attachment of by-products containing ammonium nitrate as a main component. One of the attempts is 3-65
As disclosed in No. 211, the gas flow velocity after electron beam irradiation is 10 m / s or less, preferably 5 m / s or less. In another attempt, as disclosed in JP-A-7-31844, the gas contact portion from the electron beam irradiation region to the by-product collection region is 80 ° C to 150 ° C, preferably 100 ° C to 150 ° C.
Is to The former has a drawback that the apparatus and / or the duct on the downstream side of the electron beam irradiation region has a large cross-sectional area, and the equipment tends to be large. In the latter case, there is a problem that a heat source for raising the temperature of the gas contact portion is required. Furthermore, by any of the methods, the attachment of by-products was not completely prevented, and once the attachment of by-products started, the attachment amount tended to increase at an accelerated rate.
国際出願PCT/JP97/00772において、電子ビームによっ
て発生するＸ線を遮蔽するために、入口及び出口開口部
に通じる通路を遮蔽壁で囲み、遮蔽通路の内部に仕切板
及び／又は内部隔壁を設ける方法が提案されている。こ
の方法を電子ビームガス処理装置の反応器から副生物捕
集装置に至るダクトに適用する場合には、該ダクトの一
部を遮蔽通路とし、その内部に仕切板及び／又は内部隔
壁を設けることになる。一般に、副生物は、ガスの流れ
が乱れる箇所で付着しやすいことが知られており、した
がって、遮蔽通路の内部に仕切板及び／又は内部隔壁を
設けた場合には、ガスの流れが乱れることにより、副生
物の付着が仕切板及び／又は内部隔壁又はその周囲でよ
り著しくなると予想される。In International Application PCT / JP97 / 00772, in order to shield X-rays generated by an electron beam, a passage leading to the entrance and exit openings is surrounded by a shielding wall, and a partition plate and / or an internal partition wall is provided inside the shielding passage. A method has been proposed. When this method is applied to a duct from a reactor of an electron beam gas treatment device to a by-product collection device, a part of the duct is used as a shield passage and a partition plate and / or an internal partition wall is provided inside the duct. Become. In general, it is known that by-products tend to adhere to places where the gas flow is disturbed, and therefore, when a partition plate and / or an internal partition is provided inside the shield passage, the gas flow is disturbed. It is expected that by-products will be more prominently attached to the partition plate and / or the inner partition wall or its periphery.
発明の開示
そこで本発明は、硫黄酸化物及び／又は窒素酸化物を
含むガスに、アンモニアを添加するとともに電子ビーム
を照射することによって、硫黄酸化物及び／又は窒素酸
化物を除去するとともに、反応器から反応により生成す
る副生物を捕集するまでの装置及び／又はダクトが、反
応により生成する硫安及び／又は硝安を主成分とする副
生物によって閉塞されることがないガス処理方法におけ
る副生物の付着防止方法及びガス処理装置における副生
物の付着防止装置を提供することを目的とするものであ
る。DISCLOSURE OF THE INVENTION Therefore, the present invention removes sulfur oxides and / or nitrogen oxides by adding ammonia to a gas containing sulfur oxides and / or nitrogen oxides and irradiating them with an electron beam, and By-product in the gas treatment method in which the device and / or the duct from the vessel to the collection of the by-product generated by the reaction are not clogged by the by-product containing ammonium sulfate and / or ammonium nitrate as the main component generated by the reaction It is an object of the present invention to provide a method for preventing adhesion of by-products and a device for preventing adhesion of byproducts in a gas treatment device.
本発明の１態様は、硫黄酸化物及び／又は窒素酸化物
を含むガスに反応器内でアンモニアを添加し、前記反応
器内で前記ガスに電子ビームを照射することによって硫
黄酸化物及び／窒素酸化物を除去し、前記反応器内の反
応によって生成された副生物を捕集装置によって捕集
し、前記反応器から前記捕集装置に延びるガス接触部の
少なくとも一部をガスの水露点以下に冷却することを特
徴とするものである。One aspect of the present invention is to add sulfur oxide and / or nitrogen oxide by adding ammonia to a gas containing sulfur oxide and / or nitrogen oxide in a reactor and irradiating the gas with an electron beam in the reactor. By removing oxides, by-products produced by the reaction in the reactor are collected by a collector, and at least a part of a gas contact portion extending from the reactor to the collector is at or below the water dew point of gas. It is characterized by cooling to.
本発明においては、反応は大気圧下で行われるので、
ガスの水露点の温度はガスの組成によって若干影響され
るが、主としてガス中の水蒸気濃度に左右される。その
水蒸気濃度（％）と水露点（℃）の関係は下記表に示す
とおりである。In the present invention, since the reaction is carried out under atmospheric pressure,
The temperature of the water dew point of the gas is slightly affected by the composition of the gas, but mainly depends on the water vapor concentration in the gas. The relationship between the water vapor concentration (%) and the water dew point (° C) is shown in the table below.
反応器から、反応により生成する副生物を捕集するま
での装置のガス接触部の全部または一部をガスの水露点
以下に冷却することによって、ガス中の水蒸気をガス接
触部で結露させ、その結露水によってガス接触部に衝突
又は付着した副生物を溶解・洗浄させる。それゆえ、副
生物がガス接触部に付着することを防止し又は付着量の
増大を防止する。ガス接触部は、ガスの流れが乱される
ことによって副生物の付着が起こり易い箇所だけ冷却す
るか、また、ガス接触部の上部だけを冷却し、下部は上
部から流れてくる結露水で洗浄したりすることも可能で
ある。 From the reactor, by cooling all or part of the gas contact part of the device until collecting the by-products generated by the reaction to below the water dew point of the gas, the water vapor in the gas is condensed at the gas contact part, The condensed water dissolves and cleans the by-product that collides or adheres to the gas contact part. Therefore, it is possible to prevent the by-product from adhering to the gas contact portion or prevent an increase in the adhering amount. For the gas contact part, cool only the place where by-products are likely to adhere due to the disturbance of the gas flow, or cool only the upper part of the gas contact part and wash the lower part with the condensed water flowing from the upper part. It is also possible to do.
本発明の方法は、電子ビーム照射前又は照射後にガス
中にガス接触部で発生した結露水を噴霧する工程を備え
ることもできる。The method of the present invention can also include a step of spraying condensed water generated in the gas contact portion into the gas before or after the electron beam irradiation.
本発明の他の態様は、硫黄酸化物及び／又は窒素酸化
物を含むガスを供給する反応器と、前記反応器中のガス
にアンモニアを供給する供給装置と、前記反応器内で前
記ガスに電子ビームを照射する電子加速器と、前記反応
によって生成された副生物を捕集する捕集装置と、前記
反応器から前記捕集装置まで延びかつ前記ガスが通過す
るダクトと、前記反応器から前記捕集装置に延びている
ガス接触部の少なくとも一部をガスの水露点以下に冷却
する冷却構造とを備えたことを特徴とするものである。Another aspect of the present invention is a reactor that supplies a gas containing sulfur oxides and / or nitrogen oxides, a supply device that supplies ammonia to the gas in the reactor, and a reactor that supplies the gas in the reactor. An electron accelerator for irradiating an electron beam, a collector for collecting by-products produced by the reaction, a duct extending from the reactor to the collector and through which the gas passes, and the reactor to the And a cooling structure for cooling at least a part of the gas contact portion extending to the collector to a water dew point of the gas or less.
本発明の装置は、ダクトの内部に間隔を置いた複数の
仕切板又は内部隔壁を備え、ガス接触部はガス接触部の
少なくとも一部を冷却する冷却構造を有した仕切板又は
内部隔壁の外面を備えている。The device of the present invention comprises a plurality of partition plates or internal partition walls spaced inside the duct, and the gas contact portion has a cooling structure for cooling at least a part of the gas contact portion. Is equipped with.
冷却構造はダクトに設けられた冷却ジャケットからな
るか、またはガス接触部又はガス非接触部に設けられガ
ス接触部を冷却するための冷却水配管からなる。冷却構
造は仕切板又は内部隔壁に設けられた冷却水流路からな
る。The cooling structure includes a cooling jacket provided in the duct, or a cooling water pipe provided in the gas contact portion or the gas non-contact portion for cooling the gas contact portion. The cooling structure is composed of a partition plate or a cooling water passage provided in an internal partition wall.
特に、仕切板及び／又は隔壁がダクト内に設けられる
場合には、分割ダクトを仕切板間に設けることが可能で
ある。分割ダクトはガス接触部又はガス非接触部に冷却
ジャケット又は冷却水配管を備えることが可能であり、
ガス接触部の全部又は一部をガスの水露点以下に冷却す
ることができる。ガス接触部に発生した結露水は硫安及
び／又は硝安を主成分とする副生物を溶解する水溶液と
なるため腐食性を有する。このため、結露水と接触する
部分はステンレス鋼等の耐食性材料で製作するか、ある
いはライニング等によって保護することが望ましい。特
に、ダクトの内部に仕切板及び／又は内部隔壁を設ける
場合には、仕切板で区切られた通路に分割ダクトを挿入
し、分割ダクトの結露水と接触する部分をステンレス鋼
等の耐食性材料で製作することが有効である。In particular, when the partition plate and / or the partition wall are provided in the duct, the divided duct can be provided between the partition plates. The split duct can be equipped with a cooling jacket or cooling water pipes at the gas contacting part or the gas non-contacting part,
All or part of the gas contact part can be cooled below the water dew point of the gas. The dew condensation water generated in the gas contact portion becomes corrosive because it becomes an aqueous solution that dissolves by-products containing ammonium sulfate and / or ammonium nitrate as a main component. Therefore, it is desirable that the portion that comes into contact with the condensed water be made of a corrosion resistant material such as stainless steel, or be protected by a lining or the like. In particular, when a partition plate and / or an internal partition wall is provided inside the duct, insert the split duct into the passage divided by the partition plate, and use a corrosion-resistant material such as stainless steel for the portion of the split duct that comes into contact with dew condensation water. It is effective to produce.
結露水には、硫安及び／又は硝安を主成分とする副生
物が溶解又は懸濁しているが、結露水を必要であればろ
過し、また水又はアンモニア水等の水溶液と混合した上
で反応器内のガス中に噴霧すれば、結露水はガスがもと
もと保有している顕熱、電子ビーム照射による発熱及び
化学反応熱によって蒸発し、結露水中に溶解又は懸濁し
ていた副生物は乾燥する。乾燥した副生物は、その後、
結露水中に溶解又は懸濁しなかった副生物とともに捕集
装置で捕集される。By-products containing ammonium sulfate and / or ammonium nitrate as main components are dissolved or suspended in the condensed water, but the condensed water is filtered if necessary, and the reaction is performed after mixing with water or an aqueous solution such as ammonia water. If sprayed into the gas inside the vessel, the dew condensation water will evaporate due to the sensible heat originally possessed by the gas, the heat generated by electron beam irradiation and the heat of chemical reaction, and the by-products dissolved or suspended in the dew condensation water will dry. . The dried by-products are then
It is collected by a collector together with by-products that are not dissolved or suspended in dew condensation water.
噴霧装置は、噴霧装置がガス接触部で凝縮した結露水
を反応器内に噴霧できるように反応器の上流領域、又は
中央領域、又は下流領域に設けることができる。The atomizing device can be provided in the upstream region, the central region, or the downstream region of the reactor so that the water vaporized by the atomizing device can be condensed into the reactor.
本発明の上述及び他の目的、特徴及び利点は、本発明
の好ましい実施例を図示する添付図面とともに次の説明
から明らかになる。The above and other objects, features and advantages of the present invention will become apparent from the following description in conjunction with the accompanying drawings, which illustrate preferred embodiments of the invention.
図面の簡単な説明
図１は本発明の電子ビームの照射によるガス処理装置
の概略図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of an electron beam irradiation gas treatment apparatus according to the present invention.
図２は図１に示す装置の遮蔽壁によって囲まれた反応
器、および反応器の下流に延びるとともに遮蔽壁の開口
に接続されたダクト内に配設された内部仕切壁を示す断
面図である。FIG. 2 is a cross-sectional view showing a reactor surrounded by a shield wall of the apparatus shown in FIG. 1 and an internal partition wall extending downstream of the reactor and arranged in a duct connected to an opening of the shield wall. .
図３は図１に示す装置の反応器の下流側のダクトの部
分立面図であり、ダクトは冷却ジャケットを有した部分
と冷却水配管が螺旋状に巻回された部分を含んでいる。FIG. 3 is a partial elevational view of a duct downstream of the reactor of the apparatus shown in FIG. 1, the duct including a portion having a cooling jacket and a portion in which cooling water pipes are spirally wound.
図４は内部に冷却水通路を備えた内部仕切板の１つを
示す部分斜視図である。FIG. 4 is a partial perspective view showing one of the internal partition plates having a cooling water passage inside.
図５は仕切板の変更例を示す部分斜視図である。 FIG. 5 is a partial perspective view showing a modified example of the partition plate.
図６は比較例における電子ビームの照射によるガス処
理装置の概略図である。FIG. 6 is a schematic diagram of a gas treatment apparatus by irradiation with an electron beam in a comparative example.
発明を実施するための最良の形態
以下、本発明に係る電子ビームの照射によるガス処理
装置を図１乃至図５を参照して説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a gas treatment apparatus using electron beam irradiation according to the present invention will be described with reference to FIGS. 1 to 5.
図１に示すように、本発明の装置は、燃料燃焼設備の
一種であり排ガスを排出するボイラ１と、ボイラ１から
排出された排ガスを冷却する熱交換器２と、熱交換器２
からの排ガスを冷却水をスプレーすることによって更に
冷却するための水スプレー式冷却塔３と、水スプレー式
冷却塔３から冷却された排ガスを供給する反応器４とを
備えている。装置は、反応器４の下流にあるダクト５
と、反応器４からダクト５によって排出されたガスから
副生物粒子を収集する電気集塵機６と、電気集塵機６か
らのガスを装置の外部に排出するための誘引ファン７と
を備えている。電子加速器８はガスに電子ビームを照射
するために反応器４に設置されている。アンモニアはア
ンモニア供給設備９からラインミキサ10に供給され、供
給されたアンモニアはラインミキサ10内で空気と混合さ
れ、アンモニアと空気の混合ガスは反応器４内の二流体
ノズル11に供給される。二流体ノズル11において、ライ
ンミキサ10からの混合ガスと混合液槽12からの混合液は
気液混合室で混合される。混合液槽12の混合液は、水と
ダクト５に形成された水抜出口13からの結露水との混合
物である。二流体ノズル11によって生成されたガスと液
体の混合物は、電子ビームの照射前又は後に反応器４内
の排ガスに噴霧される。二流体ノズル11は反応器４の上
流領域、又は中央領域、又は下流領域に位置している。
水抜出口13から排出されて水と混合された結露水は、反
応器４内に噴霧され、反応器４内又はダクト５内で蒸発
するので、排水の発生が防止され、排水処理設備はガス
処理設備において必要でない。As shown in FIG. 1, the apparatus of the present invention is a type of fuel combustion equipment, which discharges exhaust gas, a heat exchanger 2 that cools the exhaust gas discharged from the boiler 1, and a heat exchanger 2.
A water spray type cooling tower 3 for further cooling the exhaust gas from the water by spraying cooling water, and a reactor 4 for supplying the exhaust gas cooled from the water spray type cooling tower 3. The device consists of a duct 5 downstream of the reactor 4.
And an electric dust collector 6 for collecting by-product particles from the gas discharged from the reactor 4 through the duct 5, and an induction fan 7 for discharging the gas from the electric dust collector 6 to the outside of the apparatus. The electron accelerator 8 is installed in the reactor 4 for irradiating the gas with an electron beam. Ammonia is supplied from the ammonia supply facility 9 to the line mixer 10, the supplied ammonia is mixed with air in the line mixer 10, and the mixed gas of ammonia and air is supplied to the two-fluid nozzle 11 in the reactor 4. In the two-fluid nozzle 11, the mixed gas from the line mixer 10 and the mixed liquid from the mixed liquid tank 12 are mixed in the gas-liquid mixing chamber. The mixed liquid in the mixed liquid tank 12 is a mixture of water and dew condensation water from the water discharge outlet 13 formed in the duct 5. The mixture of gas and liquid generated by the two-fluid nozzle 11 is sprayed on the exhaust gas in the reactor 4 before or after irradiation with the electron beam. The two-fluid nozzle 11 is located in the upstream region, the central region, or the downstream region of the reactor 4.
The dew condensation water discharged from the water outlet 13 and mixed with water is sprayed in the reactor 4 and evaporated in the reactor 4 or the duct 5, so that the generation of waste water is prevented, and the waste water treatment facility uses gas treatment. Not required in equipment.
図２に示すように、反応器４は遮蔽壁14により囲まれ
ており、折曲して形成されるとともに並列して間隔を置
いた仕切板15は、反応器４の下流に延び、かつ遮蔽壁14
の開口に接続されているダクト５内に配置されている。As shown in FIG. 2, the reactor 4 is surrounded by a shield wall 14, and a partition plate 15 formed by bending and spaced in parallel extends to the downstream of the reactor 4 and is shielded. Wall 14
Is located in the duct 5 connected to the opening of the.
図３に示すように、ダクト５は冷却ジャケット16を有
した上流部と冷却水配管17が螺旋状に巻回された下流部
とを含んでいる。冷却水が冷却ジャケット16および冷却
水配管17にそれぞれ供給され、ガス接触部として機能す
るダクト５の内面を冷却する。As shown in FIG. 3, the duct 5 includes an upstream portion having a cooling jacket 16 and a downstream portion in which a cooling water pipe 17 is spirally wound. Cooling water is supplied to the cooling jacket 16 and the cooling water pipe 17, respectively, and cools the inner surface of the duct 5 which functions as a gas contact portion.
図４に示すように、複数の折曲部を有した仕切板15の
各々は、内部に曲がりくねって延びている冷却水流路18
を備えている。冷却水は冷却水流路18にも供給され、仕
切板15の外面を冷却する。仕切板15の外面もガス接触部
として機能する。冷却水流路は反応器４の壁又はダクト
５の壁に設けることができる。As shown in FIG. 4, each of the partition plates 15 having a plurality of bent portions has a cooling water flow path 18 that winds and extends inside.
Is equipped with. The cooling water is also supplied to the cooling water passage 18 to cool the outer surface of the partition plate 15. The outer surface of the partition plate 15 also functions as a gas contact portion. The cooling water channel can be provided in the wall of the reactor 4 or the wall of the duct 5.
図５は仕切板15の変形例である。図５に示すように、
内部に冷却ジャケットを有した分割ダクト19は遮蔽壁14
と仕切板15との間、および隣接する仕切板15の間にそれ
ぞれ設けられている。分割ダクト19は矩形断面の折曲通
路を有している。冷却水は分割ダクトの冷却ジャケット
に供給され、ガス接触部として機能する分割ダクト19の
内面を冷却する。排ガスは各分割ダクト19の内部を流れ
る。排ガスは仕切板15に直接に接触しないが、冷却ジャ
ケットによってガスの水露点以下に冷却された分割ダク
ト19の内面に接触し、これゆえガス中の水蒸気は凝縮
し、分割ダクト19の内面に接触するか又は分割ダクト19
の表面に付着した副生物は結露水によって溶解され洗い
流される。FIG. 5 shows a modification of the partition plate 15. As shown in FIG.
The dividing duct 19 having a cooling jacket inside has a shielding wall 14
And the partition plate 15 and between the adjacent partition plates 15. The divided duct 19 has a bent passage having a rectangular cross section. The cooling water is supplied to the cooling jacket of the split duct to cool the inner surface of the split duct 19 which functions as a gas contact portion. The exhaust gas flows inside each divided duct 19. The exhaust gas does not directly contact the partition plate 15, but contacts the inner surface of the split duct 19 cooled below the water dew point of the gas by the cooling jacket, so that the water vapor in the gas condenses and contacts the inner surface of the split duct 19. Do or split duct 19
By-products adhering to the surface of the are dissolved by dew condensation water and washed away.
（本発明の実験例）
図１乃至図５に示す装置によって本発明の実験をし
た。図１において、ボイラ１から発生した硫黄酸化物を
700ppm、窒素酸化物を150ppm含む排ガス1,500m3N/hを熱
交換器２で150℃まで冷却し、水スプレー式冷却塔３で6
0℃まで冷却した後、反応器４に導く。一方、アンモニ
ア供給設備９から供給されたアンモニア2.1m3N/hを空気
8.0m3N/hとラインミキサ10で混合し、その混合ガスと、
混合液槽12から供給される混合液13.3kg/hを二流体ノズ
ル11の気液混合室で混合して反応器４入口で噴霧注入
し、電子加速器８から電子ビームを10kGy照射した。排
ガスは反応器４の出口で65℃となり、その際のガスの水
露点は50℃であった、その後、排ガスは、反応器下流の
ダクト５を通して電気集塵機６に導かれ、副生物が捕集
された後、誘引ファン７で昇圧されて大気に放出され
た。誘引ファン７の出口での硫黄酸化物濃度は35ppm、
窒素酸化物濃度は20ppm、ダスト濃度は5mg/m3Nであっ
た。(Experimental Example of the Present Invention) An experiment of the present invention was conducted by the apparatus shown in FIGS. In FIG. 1, the sulfur oxides generated from the boiler 1
Exhaust gas of 1,500 m 3 N / h containing 700 ppm and 150 ppm of nitrogen oxides is cooled to 150 ° C by the heat exchanger 2 and cooled by the water spray cooling tower 3 to 6
After cooling to 0 ° C., it is led to the reactor 4. On the other hand, 2.1 m 3 N / h of ammonia supplied from the ammonia supply facility 9 is used as air.
8.0m 3 N / h and line mixer 10 mixed, and the mixed gas,
13.3 kg / h of the mixed liquid supplied from the mixed liquid tank 12 was mixed in the gas-liquid mixing chamber of the two-fluid nozzle 11 and spray-injected at the inlet of the reactor 4, and the electron beam was irradiated from the electron accelerator 8 at 10 kGy. The exhaust gas reached 65 ° C. at the outlet of the reactor 4, and the water dew point of the gas at that time was 50 ° C. After that, the exhaust gas was guided to the electrostatic precipitator 6 through the duct 5 downstream of the reactor to collect by-products. Then, the pressure was increased by the induction fan 7 and released to the atmosphere. The concentration of sulfur oxides at the outlet of the attraction fan 7 is 35ppm,
The nitrogen oxide concentration was 20 ppm, and the dust concentration was 5 mg / m 3 N.
反応器４は図２に示すような遮蔽壁14内に納められ、
反応器４の下流のダクト５の内部でかつ遮蔽壁14の開口
通路となっている部分には複数の折曲部を有した仕切板
15が設置され、遮蔽壁14及び開口部の外部でのＸ線の強
度は0.1μSV/h以下となった。The reactor 4 is housed in a shield wall 14 as shown in FIG.
A partition plate having a plurality of bent portions inside the duct 5 downstream of the reactor 4 and in the opening passage of the shielding wall 14.
15 was installed, and the intensity of X-rays outside the shielding wall 14 and the opening was 0.1 μSV / h or less.
反応器４内のガスの流速は0.1m/sであり、反応器下流
のダクト５でのガスの流速は、仕切板15が設置されてい
ない箇所では10m/s、仕切板15が設置されている箇所で
は15m/sであった。The flow velocity of gas in the reactor 4 is 0.1 m / s, the flow velocity of gas in the duct 5 downstream of the reactor is 10 m / s in the place where the partition plate 15 is not installed, and the partition plate 15 is installed. It was 15 m / s at the location.
この際、図３に示すように、反応器４の下流のダクト
５は水冷ジャケット16を有した上流部と冷却水配管17を
有した下流部を含み、ダクト５のガス接触部の温度が最
も高い箇所で45℃となるようにした。また、仕切板15の
内部には、冷却水流路18を設けることによって、仕切板
15のガス接触部の温度が最も高い箇所で45℃となるよう
にした。At this time, as shown in FIG. 3, the duct 5 downstream of the reactor 4 includes an upstream portion having a water cooling jacket 16 and a downstream portion having a cooling water pipe 17, and the temperature of the gas contact portion of the duct 5 is the highest. The temperature was set to 45 ° C at a high place. Further, by providing a cooling water flow path 18 inside the partition plate 15, the partition plate
The temperature of 15 gas contact parts was set to 45 ° C at the highest temperature.
反応器４の下流のダクト５の内面及び仕切板15の表面
では5.0kg/hの結露水溶液が発生し、結露水中の副生物
濃度は６％であった。結露水は図１に示す水抜出口13
（図１参照）から抜き出し、混合水槽12で工業用水8.3k
g/hと混合した。On the inner surface of the duct 5 downstream of the reactor 4 and on the surface of the partition plate 15, 5.0 kg / h of condensed water solution was generated, and the concentration of by-products in the condensed water was 6%. Condensation water is the drain outlet 13 shown in FIG.
(See Fig. 1), 8.3k of industrial water in the mixed water tank 12
Mixed with g / h.
120時間の運転では、圧力損失は全く見られず、運転
終了後、反応器４の下流のダクト５を観察したところ、
反応器４の下流のダクト５の内面及び仕切板15の表面へ
の副生物の付着は全く見られなかった。After 120 hours of operation, no pressure loss was observed, and after the operation was completed, the duct 5 downstream of the reactor 4 was observed.
No attachment of by-products was observed on the inner surface of the duct 5 downstream of the reactor 4 and the surface of the partition plate 15.
（比較例の実験例）
比較例の実験を図６に示す電子ビームの照射によるガ
スの処理装置で行った。図６に示す装置は、図１に示す
装置と比べて、混合水槽12と水抜出口13がなく、かつダ
クト５は、冷却ジャケット16および冷却水配管17がな
く、かつ仕切板15は冷却水流路18がない点で異なってい
る。(Experimental Example of Comparative Example) The experimental example of the comparative example was performed in the gas treatment apparatus by electron beam irradiation shown in FIG. Compared to the device shown in FIG. 1, the device shown in FIG. 6 does not have the mixed water tank 12 and the drain outlet 13, the duct 5 does not have the cooling jacket 16 and the cooling water pipe 17, and the partition plate 15 has the cooling water passage. The difference is that there is no 18.
図６において、ボイラ１から発生した硫黄酸化物を70
0rpm、窒素酸化物を150ppm含む排ガス1,500m3N/hを熱交
換器２で150℃まで冷却し、水スプレー式冷却塔３で60
℃まで冷却した後、反応器４に導く。一方、アンモニア
供給設備９から供給されたアンモニア2.1m3N/hを空気8.
0m3N/hとラインミキサ10で混合し、その混合ガスと工業
用水13kg/hを二流体ノズル11の気液混合室で混合して、
反応器４入口で噴霧注入し、電子加速器８から電子ビー
ムを10kGy照射した。排ガスは反応器４の出口で65℃と
なり、反応器４の下流のダクト５を通して電気集塵機６
に導かれ、副生物が捕集された後、誘引ファン７で昇圧
されて大気に放出された。誘引ファン７の出口での硫黄
酸化物濃度は35ppm、窒素酸化物濃度は20ppm、ダクト濃
度は5mg/m3Nであった。In FIG. 6, the sulfur oxide generated from the boiler 1 is 70
Exhaust gas of 1,500 m 3 N / h containing 0 ppm of nitrogen oxides of 150 ppm is cooled to 150 ° C. by the heat exchanger 2 and then 60 by the water spray type cooling tower 3.
After cooling to 0 ° C, it is led to reactor 4. On the other hand, 2.1 m 3 N / h of ammonia supplied from the ammonia supply facility 9 is supplied to the air 8.
0 m 3 N / h and the line mixer 10 are mixed, and the mixed gas and industrial water 13 kg / h are mixed in the gas-liquid mixing chamber of the two-fluid nozzle 11,
Spray injection was performed at the inlet of the reactor 4, and the electron beam was irradiated from the electron accelerator 8 at 10 kGy. The exhaust gas reaches 65 ° C. at the outlet of the reactor 4, passes through the duct 5 downstream of the reactor 4, and collects electricity from the electrostatic precipitator 6.
After being collected by the by-product, the pressure was increased by the attracting fan 7 and released to the atmosphere. The sulfur oxide concentration at the outlet of the induction fan 7 was 35 ppm, the nitrogen oxide concentration was 20 ppm, and the duct concentration was 5 mg / m 3 N.
反応器４は図６に示すような遮蔽壁14内に納められ、
反応器４の下流に延びているダクト５の内部で、遮蔽壁
14の開口通路となっている部分には、複数の折曲部を有
した仕切板15が設置され、遮蔽壁14及び開口部の外部で
のＸ線の強度は0.1μSV/h以下となった。The reactor 4 is housed in a shield wall 14 as shown in FIG.
Inside the duct 5 extending downstream of the reactor 4, a shield wall
A partition plate 15 having a plurality of bent portions was installed in the portion serving as the opening passage of 14, and the intensity of X-rays outside the shielding wall 14 and the opening was 0.1 μSV / h or less. .
反応器４内の排ガスの流速は0.1m/sであり、ダクト５
での排ガスの流速は、仕切板15が設置されていない箇所
では10m/s、仕切板15が設置されている箇所では15m/sで
あった。The flow velocity of the exhaust gas in the reactor 4 was 0.1 m / s, and the duct 5
The flow velocity of the exhaust gas was 10 m / s in the place where the partition plate 15 was not installed, and was 15 m / s in the place where the partition plate 15 was installed.
120時間の運転をしたところ、ダクト５の内面及び仕
切板15の表面への副生物の付着のため圧力損失が増大
し、その結果誘引ファン７が運転できなくなったので運
転を停止した。その後、ダクト５の内面及び仕切板15の
表面に付着・堆積した副生物量を測定したところ、100k
gであった。After 120 hours of operation, pressure loss increased due to adhesion of by-products to the inner surface of the duct 5 and the surface of the partition plate 15. As a result, the induction fan 7 could not be operated, so operation was stopped. After that, when the amount of by-products attached and accumulated on the inner surface of the duct 5 and the surface of the partition plate 15 was measured, it was 100 k
It was g.
上述の説明から明らかなように、本発明は次の利点を
有する。As is apparent from the above description, the present invention has the following advantages.
硫黄酸化物及び／又は窒素酸化物を含むガスに、アン
モニアを添加するとともに電子ビームを照射することに
よって、硫黄酸化物及び／又は窒素酸化物を除去するガ
ス処理プロセスにおいて、反応器から副生物捕集装置ま
での装置及び／又はダクトを、反応により生成する硫安
及び／又は硝安を主成分とする副生物による閉塞から防
止することができ、その結果、ガス処理プロセスの安定
操業を可能にした。In a gas treatment process for removing sulfur oxides and / or nitrogen oxides by adding ammonia and irradiating an electron beam to a gas containing sulfur oxides and / or nitrogen oxides, by-product trapping from a reactor is performed. The device and / or the duct up to the collecting device can be prevented from being blocked by a by-product containing ammonium sulfate and / or ammonium nitrate as a main component, which is produced by the reaction, and as a result, a stable operation of the gas treatment process is enabled.
本発明の好ましい実施態様を示し、詳細に説明した
が、種々の変更及び改変が本発明の範囲から逸脱するこ
となくなし得る。While the preferred embodiment of the invention has been shown and described in detail, various changes and modifications can be made without departing from the scope of the invention.
産業上の利用の可能性
本発明は、石炭や石油等の種々の燃料の燃焼排ガス中
に含まれる硫黄酸化物及び／又は窒素酸化物をガス中か
ら高効率で除去することができる排ガス処理設備に好適
である。INDUSTRIAL APPLICABILITY The present invention is an exhaust gas treatment facility capable of removing sulfur oxides and / or nitrogen oxides contained in combustion exhaust gas of various fuels such as coal and petroleum from gas with high efficiency. Suitable for
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平８−164324（ＪＰ，Ａ) 特開 平８−164323（ＪＰ，Ａ) 特公 昭58−884（ＪＰ，Ｂ１) 特公 平７−41143（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.7，ＤＢ名) B01D 53/32 B01D 53/56 B01D 53/60 B01D 53/50 B01D 51/02 ─────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-8-164324 (JP, A) JP-A-8-164323 (JP, A) JP-B 58-884 (JP, B1) JP-B 7- 41143 (JP, B2) (58) Fields surveyed (Int.Cl. 7 , DB name) B01D 53/32 B01D 53/56 B01D 53/60 B01D 53/50 B01D 51/02
Claims (10)
物を含むガスにアンモニアを添加するとともに電子ビー
ムを照射して副生物を生成し、該反応器で生成された副
生物を反応後のガスとともに捕集装置に送り込むととも
に、該捕集装置で該反応後のガスから該副生物を捕集す
るガス処理方法において、前記反応器で生成された副生
物を該反応後のガスとともに前記捕集装置に送り込むに
際し、該反応後のガスの水露点以下に冷却されたガス接
触部に該反応後のガスを接触させるようにしたことを特
徴とする副生物の付着防止方法。1. In a reactor, ammonia is added to a gas containing sulfur oxides and / or nitrogen oxides and an electron beam is irradiated to produce a by-product, and the by-product produced in the reactor is reacted. In a gas treatment method in which the by-product is collected from the gas after the reaction in the collector together with the gas after the reaction, the by-product generated in the reactor is also included in the gas after the reaction. A method for preventing by-products from adhering, wherein the gas after the reaction is brought into contact with a gas contact portion cooled to a water dew point of the gas after the reaction or lower when the gas is sent to the collection device.
ガス接触部で発生した結露水をガス中に噴霧することを
特徴とする請求項１記載の方法。2. The method according to claim 1, wherein the condensed water generated in the gas contact portion is sprayed into the gas before or after the irradiation with the electron beam.
スにアンモニアを添加するとともに電子ビームを照射し
て副生物を生成し、該生成された副生物を反応後のガス
とともに排出する反応器と、該反応器から排出された反
応後のガスから副生物を捕集する捕集装置とを備えたガ
ス処理装置において、前記反応器で生成された副生物を
反応後のガスとともに前記捕集装置に送り込むに際し、
該反応後のガスの水露点以下に冷却され該反応後のガス
を接触させるガス接触部を設けたことを特徴とする副生
物の付着防止装置。3. A reaction in which ammonia is added to a gas containing sulfur oxides and / or nitrogen oxides, electron beams are irradiated to produce a by-product, and the produced by-product is discharged together with the gas after the reaction. In a gas treatment device equipped with a reactor and a collector for collecting by-products from the gas after the reaction discharged from the reactor, the by-products produced in the reactor are collected together with the gas after the reaction by the trap. When sending it to the collecting device,
An apparatus for preventing adhesion of by-products, comprising a gas contact portion that is cooled below the water dew point of the gas after the reaction and is brought into contact with the gas after the reaction.
ることを特徴とする請求項３記載の装置。4. The apparatus of claim 3, wherein the gas contact portion comprises an inner surface of the duct.
いた仕切板又は隔壁を備え、前記ガス接触部は前記仕切
板又は隔壁の外面からなることを特徴とする請求項３記
載の装置。5. The partition according to claim 3, further comprising a plurality of partition plates or partition walls arranged in the duct, the gas contact portion being formed of an outer surface of the partition plate or partition wall. apparatus.
クトに設けられた冷却ジャケットからなることを特徴と
する請求項３乃至５のいずれか１項に記載の装置。6. The apparatus according to claim 3, wherein the cooling structure in the gas contact portion comprises a cooling jacket provided in the duct.
クトに設けられた冷却水配管からなることを特徴とする
請求項３乃至５のいずれか１項に記載の装置。7. The apparatus according to claim 3, wherein the cooling structure in the gas contact portion comprises a cooling water pipe provided in the duct.
応器、前記ダクト、及び前記仕切板は隔壁の少なくとも
１つに設けられた冷却水流路からなることを特徴とする
請求項３乃至５のいずれか１項に記載の装置。8. The cooling structure in the gas contact portion is characterized in that the reactor, the duct, and the partition plate are cooling water passages provided in at least one of partition walls. The apparatus according to claim 1.
記ガス接触部における冷却構造は前記分割ダクトに設け
られた冷却ジャケットからなることを特徴とする請求項
３乃至５のいずれか１項に記載の装置。9. The duct according to claim 3, wherein the duct includes a plurality of divided ducts, and the cooling structure in the gas contact portion includes a cooling jacket provided in the divided ducts. The described device.
した結露水を前記反応器中に噴霧するように前記反応器
の上流領域、中央領域及び下流領域のいずれかに配置さ
れていることを特徴とする請求項３乃至５のいずれか１
項に記載の装置。10. The supply device is arranged in any one of an upstream region, a central region and a downstream region of the reactor so that the condensed water condensed in the gas contact portion is sprayed into the reactor. The invention according to any one of claims 3 to 5, wherein
The device according to paragraph.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-196303 | 1996-07-25 | ||
| PCT/JP1997/002562 WO1998004336A1 (en) | 1996-07-25 | 1997-07-24 | Method and apparatus for treating gas by irradiation of electron beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000515808A JP2000515808A (en) | 2000-11-28 |
| JP3411294B2 true JP3411294B2 (en) | 2003-05-26 |
Family
ID=14180866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50868598A Expired - Fee Related JP3411294B2 (en) | 1996-07-25 | 1997-07-24 | Method and apparatus for preventing adhesion of by-products in gas processing by electron beam irradiation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3411294B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102365372B1 (en) * | 2020-09-28 | 2022-02-21 | 한국원자력연구원 | System for purifying air |
| KR20230150533A (en) * | 2022-04-22 | 2023-10-31 | 한국원자력연구원 | Mixed malodorous gas treatment method and mixed malodorous gas treatment facility |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007029819A (en) * | 2005-07-25 | 2007-02-08 | Kawasaki Heavy Ind Ltd | Exhaust gas purification electron beam irradiation device |
| CA2799645C (en) | 2010-07-01 | 2017-04-18 | Advanced Fusion Systems Llc | Method and system for inducing chemical reactions by x-ray irradiation |
| US12036504B2 (en) | 2018-10-24 | 2024-07-16 | Korea Atomic Energy Research Institute | Atmosphere purification reactor using electron beam and atmosphere purification apparatus including the same |
| KR102309992B1 (en) * | 2019-04-29 | 2021-10-07 | 서경덕 | Fluid treatment device having electron beam module |
| CN110180358A (en) * | 2019-07-02 | 2019-08-30 | 苏州仕净环保科技股份有限公司 | A kind of electron beam irradiation processing unit applied to stack gases |
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1997
- 1997-07-24 JP JP50868598A patent/JP3411294B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102365372B1 (en) * | 2020-09-28 | 2022-02-21 | 한국원자력연구원 | System for purifying air |
| KR20230150533A (en) * | 2022-04-22 | 2023-10-31 | 한국원자력연구원 | Mixed malodorous gas treatment method and mixed malodorous gas treatment facility |
| KR102774982B1 (en) * | 2022-04-22 | 2025-03-04 | 한국원자력연구원 | Malodorous gas treatment method and malodorous gas treatment facility |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000515808A (en) | 2000-11-28 |
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