JP3416066B2 - Electrode for electrolytic fluorination reaction and organic electrolytic fluorination method - Google Patents
Electrode for electrolytic fluorination reaction and organic electrolytic fluorination methodInfo
- Publication number
- JP3416066B2 JP3416066B2 JP00467799A JP467799A JP3416066B2 JP 3416066 B2 JP3416066 B2 JP 3416066B2 JP 00467799 A JP00467799 A JP 00467799A JP 467799 A JP467799 A JP 467799A JP 3416066 B2 JP3416066 B2 JP 3416066B2
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- JP
- Japan
- Prior art keywords
- electrode
- electrolytic
- electrolytic fluorination
- diamond
- reaction
- Prior art date
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- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Description
【0001】[0001]
【発明の属する技術分野】この出願の発明は、電解フッ
素化反応用電極と有機電解フッ素化方法に関するもので
ある。さらに詳しくは、この出願の発明は、医薬、農
薬、ポリマー、洗浄剤その他各種の化成品やその合成中
間体として有用な含フッ素有機化合物の電解製造等に有
用な、選択的な電解酸化によるフッ素化が可能とされ
る、新しい電解フッ素化反応用電極とこれを用いた有機
電解フッ素化方法に関するものである。TECHNICAL FIELD The invention of this application relates to an electrode for electrolytic fluorination reaction and an organic electrolytic fluorination method. More specifically, the invention of this application provides fluorine by selective electrolytic oxidation, which is useful for electrolytic production of fluorine-containing organic compounds useful as pharmaceuticals, agricultural chemicals, polymers, detergents and other various chemical products and synthetic intermediates thereof. The present invention relates to a new electrode for electrolytic fluorination reaction that can be converted to an organic electrolytic fluorination method using the same.
【0002】[0002]
【従来の技術とその課題】従来より、電解フッ素化反応
の方法については各種の提案と工夫が報告されている
が、これらは大別すると次の3種のものに分けられる。
第1の方法は、電解液として無水フッ化水素に有機化合
物を溶かしたものを用い、アノード(陽極)にニッケル
電極を使用して電解することによりフッ素化する方法
(シモンズ法)である。第2の方法は、電解液として一
般にフッ素ガスの製造に用いられている電解液組成KF
・2HF(フッ化カリウム:フッ化水素=1:2)を用
い、アノードに多孔質の炭素電極を使用して該電極内部
の底側から上側へ向かってガス状の有機化合物を流すこ
とにより、電解で生成したフッ素とその有機化合物とを
電極内部で反応させてフッ素化する方法(フィリップ
法)である。第3の方法は、電解液として非プロトン性
溶媒にフッ素源と有機化合物を溶かしたものを用い、ア
ノードに白金電極を使用して電解することによりフッ素
化する方法である。2. Description of the Related Art Conventionally, various proposals and contrivances regarding electrolytic fluorination reaction methods have been reported. These can be roughly classified into the following three types.
The first method is a method (Simmons method) in which an organic compound is dissolved in anhydrous hydrogen fluoride as an electrolytic solution and electrolysis is performed using a nickel electrode as an anode. The second method is an electrolytic solution composition KF which is generally used for producing fluorine gas as an electrolytic solution.
By using 2HF (potassium fluoride: hydrogen fluoride = 1: 2) and using a porous carbon electrode as the anode, and flowing a gaseous organic compound from the bottom side to the top side inside the electrode, This is a method (Philip method) in which fluorine generated by electrolysis and its organic compound are reacted inside the electrode to fluorinate. The third method is a method in which an aprotic solvent in which a fluorine source and an organic compound are dissolved is used as an electrolytic solution, and a platinum electrode is used as an anode for electrolysis to perform fluorination.
【0003】第1および第2の方法は、主として完全に
フッ素化された生成物が得られ、界面活性剤、不活性ガ
スおよび不活性液体の製造法として工業的に確立されて
いる。また、第3の方法は、部分的にフッ素化すること
ができるため、含フッ素有機中間体の合成方法として期
待されているものである。しかしながら、以上のとおり
の従来技術のうちの第1の方法では、無水フッ化水素を
有機化合物の電解フッ素化反応に使用することからなる
取扱いが難しく、電極としてニッケル電極の使用が欠か
せないことからも設備や条件が極めて厳しく制限される
という問題があった。また、第2の方法の場合には、炭
素電極が使用され、かつ、溶融塩が用いられる点におい
て操作面においてより扱いやすいという利点があるもの
の、溶融塩浴中の炭素電極そのものの反応による不都合
や不安定さが解消できないという問題があった。しか
も、第1の方法並びに第2の方法のいずれにおいても、
有機化合物のフッ素化反応を部分的なものに制御するこ
とが難しいという課題もあった。The first and second methods are mainly industrially established as a method for producing a surfactant, an inert gas and an inert liquid, since a completely fluorinated product is obtained. Further, the third method is expected as a method for synthesizing a fluorine-containing organic intermediate because it can be partially fluorinated. However, according to the first method of the prior arts as described above, it is difficult to handle since anhydrous hydrogen fluoride is used for the electrolytic fluorination reaction of an organic compound, and the use of nickel electrodes as electrodes is indispensable. However, there was a problem that facilities and conditions were extremely severely limited. In the case of the second method, although a carbon electrode is used and a molten salt is used, there is an advantage that it is easier to handle in terms of operation, but it is inconvenient due to the reaction of the carbon electrode itself in the molten salt bath. There was a problem that the instability could not be resolved. Moreover, in both the first method and the second method,
There is also a problem that it is difficult to control the fluorination reaction of an organic compound partially.
【0004】一方、第3の方法の場合には、部分フッ素
化が可能であることにおいて特徴のあるものと言える
が、白金電極の使用による特有の条件が必要とされ、し
かも、電解反応による電極表面への皮膜形成等の不都合
な面があった。さらには、第1および第3の方法のよう
にニッケルや白金を電極に用いた場合には、酸素の吸・
脱着にともない酸化・還元電流が流れ、電流効率が下が
るとともに、電極は損傷を受け、寿命が短いという問題
もあった。On the other hand, in the case of the third method, it can be said that the partial fluorination is possible, but it is necessary to use specific conditions due to the use of the platinum electrode, and the electrode by the electrolytic reaction is required. There were inconveniences such as film formation on the surface. Furthermore, when nickel or platinum is used for the electrode as in the first and third methods, oxygen absorption
There was a problem that the oxidation / reduction current flows due to desorption, current efficiency decreases, and the electrode is damaged and the life is short.
【0005】そこで、この出願の発明者らは、以上のよ
うな従来の電解フッ素化方法についての問題点を解消す
ることを鋭意検討してきた。その際に、発明者らは、設
備も反応操作の扱いも容易で、比較的過酷な条件であっ
ても安定した操業が可能とされ、しかも有機化合物の部
分フッ素化も可能とされる新しい炭素系電極を提供する
ことを課題としてきた。その最大の理由は、炭素系電極
による電解フッ素化反応には、より汎用的な応用展開が
期待されると考えられるからである。Therefore, the inventors of this application have earnestly studied to solve the above-mentioned problems with the conventional electrolytic fluorination method. At that time, the inventors of the present invention are able to easily handle equipment and reaction operation, can operate stably even under relatively severe conditions, and can also perform partial fluorination of organic compounds. The challenge has been to provide system electrodes. The main reason for this is that it is expected that more general-purpose applications will be developed for the electrolytic fluorination reaction using carbon-based electrodes.
【0006】[0006]
【課題を解決するための手段】この出願の発明は、前記
の課題を解決するものとして、第1には、半導体ダイヤ
モンドからなることを特徴とする電解フッ素化反応用電
極を提供する。また、第2には、半導体ダイヤモンドは
基板上に成膜されたものである前記の電極を、第3に
は、シリコン基板上にホウ素ドープ気相成膜された前記
の電極を提供する。そしてまた、この出願は、第4に
は、前記第1ないし第3のいずれかの電解フッ素化反応
用電極を陽極として、有機化合物の電解フッ素化を行う
ことを特徴とする有機電解フッ素化方法を、第5には、
有機化合物は芳香族化合物である電解フッ素化方法をも
提供する。In order to solve the above-mentioned problems, the invention of the present application provides, firstly, an electrode for electrolytic fluorination reaction characterized by comprising semiconductor diamond. Secondly, the semiconductor diamond is provided with the above-mentioned electrode formed on a substrate, and thirdly, the above-mentioned electrode is obtained by vapor-depositing a boron-doped film on a silicon substrate. And, fourthly, this application is characterized in that the electrolytic fluorination of an organic compound is performed by using the electrolytic fluorination electrode of any one of the first to third aspects as an anode. Fifth,
The organic compound also provides an electrolytic fluorination process where the organic compound is an aromatic compound.
【0007】[0007]
【発明の実施の形態】この出願の発明は以上のとおりの
特徴をもつものであるが、以下に、その実施の形態につ
いて説明する。まず、この出願の発明の電解フッ素化反
応用電極は、半導体ダイヤモンドを有している。この場
合、半導体ダイヤモンドは、代表的には、基板上に成膜
された半導体ダイヤモンドからなるものが考慮される。BEST MODE FOR CARRYING OUT THE INVENTION The invention of this application has the characteristics as described above, and the embodiments thereof will be described below. First, the electrode for electrolytic fluorination reaction of the invention of this application has semiconductor diamond. In this case, the semiconductor diamond is typically considered to consist of semiconductor diamond formed on the substrate.
【0008】たとえば基板としては、シリコン、ゲルマ
ニウム、それらの化合物半導体、あるいはモリブデン、
タングステン、さらには石英ガラス、アルミナ等を例示
することができる。電極としてリードをとる関係上、基
板は、通常電気導体または半導体が好ましいとされてい
るが、この出願の発明の電解フッ素化反応用電極の場
合、基板上に成膜された半導体ダイヤモンドの薄膜から
直接リードをとることができるため、基板は特に電気導
体または半導体に限定されない。For example, as the substrate, silicon, germanium, their compound semiconductors, molybdenum,
Examples thereof include tungsten, quartz glass, and alumina. In terms of taking a lead as an electrode, the substrate is usually said to be preferably an electric conductor or a semiconductor, but in the case of the electrode for the electrolytic fluorination reaction of the invention of this application, a thin film of semiconductor diamond is formed on the substrate. The substrate is not particularly limited to electrical conductors or semiconductors, as the leads can be taken directly.
【0009】一方、基板については、半導体ダイヤモン
ド薄膜生成時の800℃以上の温度で安定、具体的に
は、たとえば融点が800℃以上であるなどが要求され
る。半導体ダイヤモンドは、たとえば不純物のドープ等
により実現されるが、ドーパントの種類により半導体ダ
イヤモンドはp型またはn型となる。p型とする場合の
ドーパントはホウ素が主流である。これ以外にはアルミ
ニウムが知られている。n型の例はこれまでのところ確
実視されていないが、窒素、リン、イオウ等がドーパン
トとして有効との報告がある。On the other hand, the substrate is required to be stable at a temperature of 800 ° C. or higher at the time of forming the semiconductor diamond thin film, specifically, for example, have a melting point of 800 ° C. or higher. The semiconductor diamond is realized, for example, by doping impurities, but the semiconductor diamond becomes p-type or n-type depending on the kind of the dopant. When the p-type is used, boron is the mainstream. Other than this, aluminum is known. An n-type example has not been confirmed so far, but it has been reported that nitrogen, phosphorus, sulfur, etc. are effective as dopants.
【0010】気相成膜のための方法は、CVD法等の従
来より知られている各種の方法が採用されることにな
る。メタン、エタン等の炭化水素と水素とのマイクロ波
照射CVDによる気相成膜法である。電極としての大き
さ、基板や半導体ダイヤモンド膜の厚み等については、
電極が使用される電解フッ素化反応の種類やその条件等
に応じて定めればよい。As a method for vapor phase film formation, various conventionally known methods such as a CVD method will be adopted. This is a vapor phase film formation method by microwave irradiation CVD of hydrocarbons such as methane and ethane and hydrogen. Regarding the size of the electrode, the thickness of the substrate and the semiconductor diamond film, etc.
It may be determined according to the type of electrolytic fluorination reaction in which the electrode is used and the conditions thereof.
【0011】以上のとおりのこの出願の発明の電極は、
比較的苛酷な条件においても安定した電解フッ素化反応
を可能とするものであって、電解反応において電極上へ
の皮膜形成という不都合もなく、反応操作の安定性、そ
して取扱い性に優れているものである。この電極を用い
ることによって、たとえば有機化合物の電解フッ素化が
可能とされる。有機化合物の完全フッ素化もしくは部分
フッ素化のコントロールも容易である。The electrode of the invention of this application as described above is
It enables a stable electrolytic fluorination reaction even under relatively severe conditions, has no inconvenience of forming a film on the electrode in the electrolytic reaction, and has excellent reaction operation stability and handleability. Is. By using this electrode, for example, electrolytic fluorination of an organic compound is possible. Control of complete fluorination or partial fluorination of organic compounds is also easy.
【0012】有機化合物の電解フッ素化についてさらに
説明すると、この発明の半導体ダイヤモンド電極を陽極
とし、電解液としてたとえば4級アルキルアンモニウム
フルオライドのフッ化水素塩またはそのフッ化水素溶
液、もしくはそれらの混合液を主成分としたものや、ア
セトニトリル、スルホラン、ニトロメタン等の非プロト
ン性溶媒に、支持電解質塩とフッ素源を兼ねたトリエチ
ルアミンのフッ化水素塩等の各種のものが用いられる。The electrolytic fluorination of an organic compound will be further described. The semiconductor diamond electrode of the present invention is used as an anode, and an electrolytic solution is, for example, a quaternary alkylammonium fluoride hydrogen fluoride salt or a hydrogen fluoride solution thereof, or a mixture thereof. As the liquid-based one, aprotic solvents such as acetonitrile, sulfolane, and nitromethane, various ones such as triethylamine hydrogen fluoride salt which also serves as a supporting electrolyte salt and a fluorine source are used.
【0013】フッ素化のための原料物質となる有機化合
物は各種のものでよく、脂肪族化合物、脂環式化合物、
芳香族化合物等の任意のものでよい。なかでも芳香族化
合物の電解フッ素化により、各種の応用展開が可能な価
値の高いフッ素化物が生成されることになる。そこで以
下に実施例を示し、さらに詳しくこの出願の発明につい
て説明する。Various organic compounds may be used as raw materials for fluorination, such as aliphatic compounds, alicyclic compounds,
It may be any such as an aromatic compound. Above all, electrolytic fluorination of aromatic compounds produces highly valuable fluorinated compounds that can be applied in various applications. Therefore, the present invention will be described in more detail with reference to the following examples.
【0014】[0014]
【実施例】(実施例1)
1)ダイヤモンド薄膜の作製
p型半導体ダイヤモンド薄膜をSi基板上にCVD法を
用いて作製した。作製条件を表1に示した。EXAMPLES Example 1 1) Preparation of Diamond Thin Film A p-type semiconductor diamond thin film was prepared on a Si substrate by the CVD method. The production conditions are shown in Table 1.
【0015】SIMSの測定結果から決定された膜中の
ドーパント濃度は1019個/cm3であった。The dopant concentration in the film determined from the SIMS measurement results was 10 19 atoms / cm 3 .
【0016】[0016]
【表1】 [Table 1]
【0017】2)電解セルの作成
電解セルの材料には、フッ酸への耐食性を考えテフロン
およびPFAを用いた。溶液のシールにはバイトン製の
Oリングを、前記のとおり作製したダイヤモンド表面か
らのリードをとるためには炭素繊維を用いた。ダイヤモ
ンド表面にのみ電解液を接触させ、薄膜表面から直接リ
ードを取るように電極を配設した。図1は、その詳細を
例示したものである。2) Preparation of electrolytic cell Teflon and PFA were used as the material of the electrolytic cell in consideration of the corrosion resistance to hydrofluoric acid. A Viton O-ring was used to seal the solution, and carbon fiber was used to take a lead from the diamond surface prepared as described above. The electrode was arranged so that the electrolytic solution was brought into contact only with the diamond surface and the lead was taken directly from the thin film surface. FIG. 1 illustrates the details.
【0018】図1において、符号は次のものを示してい
る。
(a)電解液(Et4 NF・4HF,10ml)
(b)参照電極(Ag/Ag+ )
(c)Pt作用電極(1.2×10-1cm2 、1.0m
m径×3.5mm)
(d)対極(Pt板、2.2cm2 、9mm×12m
m)
(e)テフロンキャップおよびボタン
(f)PFAプレート
(g)炭素繊維
(h)Ni板
(i)PFAチューブ
(j)半導体ダイヤモンド薄膜
(k)Viton O−リング
(l)ダイヤモンド作用電極(1.3×10-1cm2 、
4.0mm径)
3)サイクリックボルタンメトリーの測定
まず電解セルをポテンショ/ガルバノスタットに接続し
(作用極:白金)、バックグラウンド測定のための電解
液のみのCVを測定した。次に作用極をダイヤモンドに
変え、同様にバックグラウンドを測定した。In FIG. 1, reference numerals indicate the following. (A) Electrolyte solution (Et 4 NF · 4HF, 10 ml) (b) Reference electrode (Ag / Ag + ) (c) Pt working electrode (1.2 × 10 −1 cm 2 , 1.0 m)
m diameter × 3.5 mm) (d) Counter electrode (Pt plate, 2.2 cm 2 , 9 mm × 12 m
m) (e) Teflon cap and button (f) PFA plate (g) Carbon fiber (h) Ni plate (i) PFA tube (j) Semiconductor diamond thin film (k) Viton O-ring (l) Diamond working electrode (1) .3 × 10 -1 cm 2 ,
(4.0 mm diameter) 3) Measurement of cyclic voltammetry First, the electrolytic cell was connected to a potentio / galvanostat (working electrode: platinum), and the CV of only the electrolytic solution for background measurement was measured. Next, the working electrode was changed to diamond and the background was measured in the same manner.
【0019】マイクロシリンジを用いて電解液に溶質
(1,4−ジフルオロベンゼン)9.7μl添加し(溶
液濃度は0.01M)、約5分間攪拌した後バックグラ
ウンドを測定した時と同様に、CVを白金極とダイヤモ
ンド極で測定した。さらに溶質を19.4μl添加し、
約5分間攪拌後、溶液濃度0.03MでのCVを白金極
とダイヤモンド極で同様に測定した。Using a microsyringe, 9.7 μl of solute (1,4-difluorobenzene) was added to the electrolytic solution (solution concentration was 0.01 M), and the mixture was stirred for about 5 minutes and then the background was measured in the same manner as described above. CV was measured with a platinum electrode and a diamond electrode. Furthermore, 19.4 μl of solute was added,
After stirring for about 5 minutes, the CV at a solution concentration of 0.03M was similarly measured with a platinum electrode and a diamond electrode.
【0020】4)結果
得られたサイクリックボルタモグラムを図2(A)〜
(C)および図3(D)〜(F)に示した。それぞれの
ボリタモグラムを比較すると、白金極では1V〜1.5
V付近に不純物の酸化、0.4V付近に電極表面の還
元、0V以下に水素発生のピークが見られるのに対し、
ダイヤモンド電極では電解液の酸化ピークのみが見られ
る。両電極のCV共に、溶質濃度の増加に伴って高くな
るピークが溶質の酸化ピークである。4) The cyclic voltammogram obtained as a result is shown in FIG.
It shows in (C) and FIG. 3 (D)-(F). Comparing the respective voltammograms, the platinum electrode is 1 V to 1.5
In contrast to the oxidation of impurities near V, the reduction of the electrode surface near 0.4 V, and the peak of hydrogen generation below 0 V,
Only the oxidation peak of the electrolyte is seen at the diamond electrode. In both CVs of both electrodes, the peak that increases as the solute concentration increases is the solute oxidation peak.
【0021】白金電極を用いて定電位電解フッ素化を行
なった前後の電解液のガスクロマトグラムを図4に示し
た。ガスクロマトグラフの結果および文献から、この系
における白金電極での電解フッ素化によって得られる生
成物の反応過程は次式で表わされる。FIG. 4 shows gas chromatograms of the electrolytic solution before and after performing the potentiostatic electrolytic fluorination using a platinum electrode. From the results of gas chromatography and the literature, the reaction process of the product obtained by electrolytic fluorination at a platinum electrode in this system is represented by the following equation.
【0022】[0022]
【化1】 [Chemical 1]
【0023】ダイヤモンド電極でも白金電極と同様のC
Vが得られることから、白金電極と同様に、ダイヤモン
ド電極においても溶質の電解フッ素化が生起していると
言える。以上のことからダイヤモンドを用いた電解では
余分な酸化反応が起こらず、より効率的な電解酸化が可
能であることが確認される。The diamond electrode has the same C as the platinum electrode.
Since V is obtained, it can be said that electrolytic fluorination of the solute occurs in the diamond electrode as well as in the platinum electrode. From the above, it is confirmed that the electrolytic oxidation using diamond does not cause an excessive oxidation reaction and enables more efficient electrolytic oxidation.
【0024】p型半導体ダイヤモンドは以上の実施例の
電解フッ素化ではPtよりも電極としてより理想的な特
性を示し、他の系における電解フッ素化やフッ素製造へ
の利用が期待される。
(実施例2)p型半導体ダイヤモンド薄膜を10mm角
のSi基板上にCVD法を用いて作製した。作製条件を
表2に示した。SIMS(Secondary Ion Mass Spectros
copy) の測定結果から決定された膜中のドーパント濃度
は1025個/m3 であった。この薄膜のラマンスペクト
ルを図5に示した。ダイヤモンドのシャープなピークが
1333cm-1に観測されており、用いた電極は純度の
高いダイヤモンド薄膜であることがわかる。The p-type semiconductor diamond exhibits more ideal characteristics as an electrode than Pt in the electrolytic fluorination of the above examples, and is expected to be used for electrolytic fluorination and fluorine production in other systems. (Example 2) A p-type semiconductor diamond thin film was formed on a 10 mm square Si substrate by the CVD method. The production conditions are shown in Table 2. SIMS (Secondary Ion Mass Spectros
The dopant concentration in the film determined from the measurement result of (copy) was 10 25 / m 3 . The Raman spectrum of this thin film is shown in FIG. A sharp peak of diamond is observed at 1333 cm −1 , indicating that the electrode used is a highly pure diamond thin film.
【0025】[0025]
【表2】 [Table 2]
【0026】電解セルの構造は、実施例1と同じものを
用いた。電解液(Et4 NF・4HF)は、Et4 NF
・2HFに無水フッ化水素を加えることによって調製し
た。1,4−ジフルオロベンゼンとして市販品(Aldrich
Chemical)をそのまま用いた。Et4 N・BF4 (森田
化学工業株式会社)とAgClO4 (和光純薬)は37
3Kで一晩真空乾燥した。ポテンシヨ/ガルバノスタッ
トとファンクション・ジェネラターは北斗電工株式会社
製HA−301とHB−104を、ガスクロマトグラフ
ィーは株式会社島津製作所製GC−14A(カラム:化
学品検査協会G−450,40m)を用いた。The structure of the electrolytic cell used was the same as in Example 1. Electrolyte solution (Et 4 NF ・ 4HF) is Et 4 NF
Prepared by adding anhydrous hydrogen fluoride to 2HF. Commercially available as 1,4-difluorobenzene (Aldrich
Chemical) was used as is. Et 4 N · BF 4 (Morita Chemical Industry Co., Ltd.) and AgClO 4 (Wako Pure Chemical Industries) are 37
Vacuum dried overnight at 3K. Potentiyo / Galvanostat and Function Generator are Hokuto Denko HA-301 and HB-104, and Gas Chromatography is Shimadzu Corporation GC-14A (Column: Chemicals Inspection Society G-450, 40m). I was there.
【0027】電解セルの材料には、フッ化水素への耐食
性を考慮してPTFE(polytetrafluoroethylene) およ
びPFA(copolymers of tetrafluoroethylene and per
fluoroalkylvlinylether) を用いた。溶液のシールには
フッ素系ゴム(copolymers ofvinylidene fluoride and
hexafluoropropylene) 製のO−リングを、ダイヤモン
ド表面からのリードをとるためには炭素繊維を用いた。
ダイヤモンド表面にのみ電解液を接触させ、薄膜表面か
ら直接リードを取るような電極を考案した。参照極とし
てはAg/Ag+ [AgClO4 (0.01M)+Et
4 N・BF4 (0.1M)+Me3 CN]を用いた。Materials for the electrolytic cell are PTFE (polytetrafluoroethylene) and PFA (copolymers of tetrafluoroethylene and per) in consideration of corrosion resistance to hydrogen fluoride.
fluoroalkyl vlinyl ether) was used. Fluorine rubber (copolymers of vinylidene fluoride and
An O-ring made of hexafluoropropylene) was used, and carbon fiber was used to take a lead from the diamond surface.
An electrode was devised in which the electrolyte was brought into contact only with the diamond surface and the lead was taken directly from the thin film surface. As a reference electrode, Ag / Ag + [AgClO 4 (0.01M) + Et
4 N · BF 4 (0.1 M) + Me 3 CN] was used.
【0028】サイクリックボルタンメトリー(CV)
は、まず作用極に白金を用いて、バックグラウンド測定
のため電解液のみのCVを測定し、次いで作用極をダイ
ヤモンドに変え、同様にバックグラウンドを測定した。
次にマイクロシリンジを用いて電解液に溶質1,4−ジ
フルオロベンゼンを所定量添加し、溶液濃度を0.01
Mとした。約5分間攪拌した後、バックグラウンドを測
定した時と同様に、CVを白金極とダイヤモンド極で測
定した。さらに溶質を添加して溶液温度0.03Mとし
て、約5分間攪拌後、CVを白金極とダイヤモンド極で
同様に測定した。Cyclic voltammetry (CV)
First, platinum was used as the working electrode, the CV of only the electrolytic solution was measured for background measurement, then the working electrode was changed to diamond, and the background was measured in the same manner.
Next, a certain amount of solute 1,4-difluorobenzene was added to the electrolytic solution using a microsyringe to adjust the solution concentration to 0.01.
M. After stirring for about 5 minutes, CV was measured with a platinum electrode and a diamond electrode as in the case of measuring the background. Further, a solute was added, the solution temperature was adjusted to 0.03 M, the mixture was stirred for about 5 minutes, and then the CV was similarly measured at the platinum electrode and the diamond electrode.
【0029】白金電極を用いた1,4−ジフルオロベン
ゼンの定電位電解フッ素化では白金電極を用いたCV測
定の電極の極性を交換しておこなった。つまり、面積の
広い白金極(図1,d)をアノード、白金極(図1,
c)をカソードとした。電解液10mlに1,4−ジフ
ルオロベンゼン1.11×10-2mol加えて1.0M
とし、電圧2.5Vで、クーロンメーターを用いて約2
000C(約1F×1.11×10-2mol×2)流れ
れば電解反応終了とした。電解開始時には400mA程
度の電流が流れ、時間とともに電流量は減少した。反応
前、1000Cの電流が流れた時、反応後(2000C
流れた時)の3種類の電解液を採取し、ガスクロマトグ
ラムを得た。キャリアガスにはHeを使用(流量2×1
03 mm2/min)し、カラム温度は323Kから4
23Kまで10K/minで昇温させた。In the potentiostatic electrolytic fluorination of 1,4-difluorobenzene using a platinum electrode, the polarities of the electrodes for CV measurement using a platinum electrode were exchanged. That is, the platinum electrode with a large area (Fig. 1, d) is used as the anode and the platinum electrode (Fig. 1,
c) was used as the cathode. 1.0M by adding 1.11 × 10 −2 mol of 1,4-difluorobenzene to 10 ml of the electrolytic solution
And a voltage of 2.5 V, using a coulomb meter, approximately 2
When the flow of 000 C (about 1 F × 1.11 × 10 −2 mol × 2) was completed, the electrolytic reaction was completed. At the start of electrolysis, a current of about 400 mA flows, and the amount of current decreases with time. Before the reaction, when the electric current of 1000C flows, after the reaction (2000C
Three types of electrolyte solutions (when they flowed) were collected to obtain a gas chromatogram. He is used as the carrier gas (flow rate 2 x 1
0 3 mm 2 / min), and the column temperature is from 323 K to 4
The temperature was raised to 23 K at 10 K / min.
【0030】得られたサイクリッタボルタモグラムを比
較すると、実施例1と同様に、白金電極では1〜1.5
V(vs.Ag/Ag+ )付近にPtO2 の生成と考え
られる電極表面の酸化、0.4V付近に電極表面(Pt
O2 )の還元、OV以下に水素発生のピークが見られる
のに対し、ダイヤモンド電極では今回の走査電位範囲に
おいてはそのようなピークは見られない。白金電極での
PtO2 の酸化還元ピークは電解液内の微量水分に起因
したものであると考えられる。Comparing the obtained cyclita voltammograms, as in Example 1, 1 to 1.5 for platinum electrodes.
V (vs. Ag / Ag + ) near the electrode surface, which is considered to be the formation of PtO 2.
While a peak of hydrogen generation is observed below O 2 ) reduction and OV, such a peak is not observed in the diamond electrode in the current scanning potential range. The redox peak of PtO 2 at the platinum electrode is considered to be due to a trace amount of water in the electrolytic solution.
【0031】両電極のCVともに、溶質温度の増加にと
もなって高くなるピークが溶質のフッ素化に対応するピ
ークである。電解液のクロマトグラムにおいては、実施
例1の図4と同様に、保持時間4.2秒過ぎに現われる
ピークは溶媒に用いた四塩化炭素であり、1.0秒
(5.581と5.553秒)で現れるピークが1,4
−ジフルオロベンゼン、5.7秒(5.702と5.6
77秒)過ぎに現れるピークが反応生成物である3,
3,6,6−テトラフルオロ−1,4−シクロヘキサジ
エン、9.2秒で現れるのが内部標準として加えたクロ
ロベンゼンのピークと同定することができる。In both CVs of both electrodes, the peaks that increase with the increase of the solute temperature are the peaks corresponding to the fluorination of the solute. In the chromatogram of the electrolytic solution, as in FIG. 4 of Example 1, the peak that appears after the retention time of 4.2 seconds is the carbon tetrachloride used as the solvent, and 1.0 second (5.581 and 5.581). The peak that appears at 553 seconds) is 1,4
-Difluorobenzene, 5.7 seconds (5.702 and 5.6
The peak that appears after 77 seconds is the reaction product 3,
The peak of 3,6,6-tetrafluoro-1,4-cyclohexadiene, which appears at 9.2 seconds, can be identified as the peak of chlorobenzene added as an internal standard.
【0032】[0032]
【発明の効果】以上詳しく説明したとおり、この出願の
発明によって、設備や反応操作の扱いが容易で、比較的
過酷な条件であっても安定した操業が可能とされ、しか
も有機化合物の部分フッ素化も可能とされる。また、炭
素系電極としてのこの出願の発明の半導体ダイヤモンド
電極により、電解フッ素化反応のより汎用的な応用展開
が期待される。As described in detail above, the invention of this application makes it easy to handle equipment and reaction operation, and enables stable operation even under relatively severe conditions. It is also possible. In addition, the semiconductor diamond electrode of the invention of this application as a carbon-based electrode is expected to develop a more general application of electrolytic fluorination reaction.
【図1】実施例としての電解セルの構成を示した断面図
と部分斜視−平面底面図である。FIG. 1 is a cross-sectional view showing a configuration of an electrolytic cell as an example and a partial perspective-plan bottom view.
【図2】(A)(B)(C)は、各々、Pt電極の場合
のCyclic voltammogramsを例示した図である。2 (A), (B) and (C) are diagrams exemplifying Cyclic voltammograms in the case of a Pt electrode.
【図3】(D)(E)(F)は、各々、半導体ダイヤモ
ンド電極の場合のCyclic voltammogramsを例示した図で
ある。3 (D), (E), and (F) are diagrams exemplifying Cyclic voltammograms in the case of a semiconductor diamond electrode.
【図4】(A)(B)(C)は、各々、ガスクロマトグ
ラムのスペクトル図である。4 (A), (B), and (C) are spectrum diagrams of gas chromatograms, respectively.
【図5】半導体ダイヤモンド膜のラマンスペクトル図で
ある。FIG. 5 is a Raman spectrum diagram of a semiconductor diamond film.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C25B 1/00 - 15/08 ─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields investigated (Int.Cl. 7 , DB name) C25B 1/00-15/08
Claims (5)
とする有機化合物の電解フッ素化反応用電極。1. An electrode for electrolytic fluorination reaction of an organic compound, which is made of semiconductor diamond.
たものである請求項1の電極。2. The electrode according to claim 1, wherein the semiconductor diamond is formed on a substrate.
された請求項2の電極。3. The electrode according to claim 2, wherein a boron-doped vapor phase film is formed on a silicon substrate.
素化反応用電極を陽極として、有機化合物の電解フッ素
化を行うことを特徴とする有機電解フッ素化方法。4. An organic electrolytic fluorination method, which comprises electrolytically fluorinating an organic compound using the electrode for electrolytic fluorination reaction according to claim 1 as an anode.
4の電解フッ素化方法。5. The electrolytic fluorination method according to claim 4, wherein the organic compound is an aromatic compound.
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| KR20060009811A (en) | 2003-05-26 | 2006-02-01 | 스미토모덴키고교가부시키가이샤 | Diamond-coated electrode and method for producing same |
| JP2006152338A (en) * | 2004-11-26 | 2006-06-15 | Sumitomo Electric Ind Ltd | Diamond-coated electrode and manufacturing method thereof |
| JP3893397B2 (en) | 2005-03-14 | 2007-03-14 | ペルメレック電極株式会社 | Anode for electrolysis and method for electrolytic synthesis of fluorine-containing material using the anode for electrolysis |
| CN101316951B (en) | 2005-11-24 | 2011-01-19 | 住友电工硬质合金株式会社 | Diamond electrode, method for producing same, and electrolytic bath |
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| JP5313579B2 (en) * | 2008-07-24 | 2013-10-09 | 関東電化工業株式会社 | Process for producing novel fluorinated 1,2-oxathiolane 2,2-dioxide |
| JP2010174358A (en) | 2009-02-02 | 2010-08-12 | Permelec Electrode Ltd | Anode for electrolysis and method for electrolytically synthesizing fluorine-containing substance using the anode for electrolysis |
| WO2012080292A1 (en) * | 2010-12-15 | 2012-06-21 | Basf Se | Process for the electrochemical fluorination of organic compounds |
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| KR20220028073A (en) | 2019-08-30 | 2022-03-08 | 쇼와 덴코 가부시키가이샤 | Method for producing fluorine gas |
| US12358796B2 (en) | 2019-08-30 | 2025-07-15 | Resonac Corporation | Method for producing fluorine gas |
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