JP3420192B2 - Glass ceramics - Google Patents
Glass ceramicsInfo
- Publication number
- JP3420192B2 JP3420192B2 JP2000265122A JP2000265122A JP3420192B2 JP 3420192 B2 JP3420192 B2 JP 3420192B2 JP 2000265122 A JP2000265122 A JP 2000265122A JP 2000265122 A JP2000265122 A JP 2000265122A JP 3420192 B2 JP3420192 B2 JP 3420192B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- less
- quartz
- ceramics
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002241 glass-ceramic Substances 0.000 title claims description 55
- 239000013078 crystal Substances 0.000 claims description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 45
- 239000011521 glass Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 37
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 26
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 21
- 229910021489 α-quartz Inorganic materials 0.000 claims description 21
- 239000006104 solid solution Substances 0.000 claims description 20
- 229910021493 α-cristobalite Inorganic materials 0.000 claims description 15
- 238000002834 transmittance Methods 0.000 claims description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 12
- 230000005484 gravity Effects 0.000 claims description 12
- 238000005452 bending Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 229910000174 eucryptite Inorganic materials 0.000 claims description 5
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052912 lithium silicate Inorganic materials 0.000 claims description 4
- 239000010445 mica Substances 0.000 claims description 4
- 229910052618 mica group Inorganic materials 0.000 claims description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- 229910000500 β-quartz Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 46
- 238000003860 storage Methods 0.000 description 31
- 230000003287 optical effect Effects 0.000 description 27
- 239000010408 film Substances 0.000 description 22
- WVMPCBWWBLZKPD-UHFFFAOYSA-N dilithium oxido-[oxido(oxo)silyl]oxy-oxosilane Chemical compound [Li+].[Li+].[O-][Si](=O)O[Si]([O-])=O WVMPCBWWBLZKPD-UHFFFAOYSA-N 0.000 description 16
- 238000005498 polishing Methods 0.000 description 15
- 238000010828 elution Methods 0.000 description 14
- 239000003513 alkali Substances 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 description 8
- 229910052644 β-spodumene Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000005345 chemically strengthened glass Substances 0.000 description 3
- 239000003484 crystal nucleating agent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000004031 devitrification Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052634 enstatite Inorganic materials 0.000 description 2
- 229910001669 fluororichterite Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004255 ion exchange chromatography Methods 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- BBCCCLINBSELLX-UHFFFAOYSA-N magnesium;dihydroxy(oxo)silane Chemical compound [Mg+2].O[Si](O)=O BBCCCLINBSELLX-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000005304 optical glass Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000003426 chemical strengthening reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- -1 diopsite Chemical compound 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910021491 α-tridymite Inorganic materials 0.000 description 1
- 229910021494 β-cristobalite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0018—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents
- C03C10/0027—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents containing SiO2, Al2O3, Li2O as main constituents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、軽量でありながら
も良好な機械的強度と光線透過性および他の材料との適
性が良好な平均線膨張特性を有する、従来にない新規な
ガラスセラミックスに関するものである。特に、情報磁
気記憶装置の構成部材に合致する熱膨張特性および高記
憶密度化に好適な平滑性を必要とする情報記憶媒体基板
用ガラスセラミックスやこれらの保持部材、または多層
膜との良好な密着性,所望の熱膨張特性および良好な光
線透過率を必要とする光フィルター用ガラスセラミック
ス(中でもWDMもしくはDWDM向け光フィルター用
材料、またはGain−Flatteningフィルタ
ー用材料)のいずれにも好適なガラスセラミックスに関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel glass ceramic which is light in weight, yet has good mechanical strength, light transmittance, and an average linear expansion property which is suitable for other materials. It is a thing. In particular, glass ceramics for information storage medium substrates that require thermal expansion characteristics matching the constituent members of the information magnetic storage device and smoothness suitable for high storage density, and their holding members, or good adhesion with a multilayer film. Relating to glass ceramics suitable for optical filter glass ceramics (especially, materials for optical filters for WDM or DWDM, or materials for Gain-Flattening filters) that require high properties, desired thermal expansion characteristics and good light transmittance It is a thing.
【0002】[0002]
【従来の技術】近年、パーソナルコンピュータのマルチ
メディア化やデジタルビデオカメラ、デジタルカメラ等
の普及によって、動画や音声等のデータが扱われるよう
になり、高記憶密度化の情報記憶装置の需要が大きく伸
びてきている。そのため情報記憶媒体は、記録密度を上
げるために、ビットセルのサイズを縮小化する必要があ
る。そしてヘッドは、ビットセルの縮小化に伴って、情
報記憶媒体表面に著しく近接した状態で作動するように
なる。このようにヘッドが情報記憶媒体に対し、低浮上
状態(ニアコンタクト)または接触状態(コンタクト)
にて作動する場合、その情報磁気記憶媒体基板の表面は
超平滑性が重要となる。更に、従来のランディングゾー
ン技術に対抗して、磁気ヘッドを完全に接触させ、ヘッ
ドの始動停止を情報磁気記憶媒体基板上から外す、ラン
プロード技術も開発されており、情報磁気記憶媒体基板
表面への要求は、よりスムーズへという方向となってい
る。2. Description of the Related Art In recent years, as personal computers have become multimedia and digital video cameras, digital cameras and the like have become widespread, data such as moving images and voices have been handled, and there is a great demand for information storage devices with high storage density. It is growing. Therefore, in the information storage medium, it is necessary to reduce the size of the bit cell in order to increase the recording density. Then, as the size of the bit cell is reduced, the head operates in a state of being extremely close to the surface of the information storage medium. In this way, the head is in a low flying state (near contact) or a contact state (contact) with respect to the information storage medium.
When it is operated in, the ultra-smoothness of the surface of the information magnetic storage medium substrate is important. Further, a ramp load technology has been developed to completely contact the magnetic head and remove the start / stop of the head from the information magnetic storage medium substrate against the conventional landing zone technology. The demands for are becoming smoother.
【0003】また、情報容量の増大化に伴い、さらなる
磁性膜の微細化、高精度化、薄膜化が進行し、基板材か
ら溶出するアルカリ成分(Li,Na,K)についても
より低溶出量であることが求められている。Further, as the information capacity increases, the magnetic film becomes finer, more precise, and thinner, and the alkaline components (Li, Na, K) eluted from the substrate material are also reduced in elution amount. Is required to be.
【0004】しかもこれらの情報記憶媒体は、モバイル
用(APSカメラ、携帯電話、デジタルカメラ、デジタ
ルビデオカメラ、カードドライブ)、モバイルPCおよ
びデスクトップPC用(ハードディスクドライブ)、サ
ーバー用(ハードディスクドライブ)、新規高記録密度
媒体用(垂直磁気記憶媒体、アイランド(Island)磁気
記憶媒体、半導体メモリー用記憶媒体)等への用途展開
も始まりつつあり、これら新規用途への展開も含めて、
基板に求められる物理的,化学的,電気的特性はより高
度になっている。Moreover, these information storage media are used for mobile (APS camera, mobile phone, digital camera, digital video camera, card drive), mobile PC and desktop PC (hard disk drive), server (hard disk drive), new. Applications for high recording density media (perpendicular magnetic storage media, island magnetic storage media, storage media for semiconductor memory), etc. are beginning to be developed.
The physical, chemical, and electrical properties required for substrates have become more sophisticated.
【0005】従来、磁気ディスク基板材には、アルミニ
ウム合金が使用されているが、アルミニウム合金基板で
は、種々の材料欠陥の影響により、研磨工程において基
板表面の突起またはスポット状の凹凸を生じ、平滑性の
点で前記の高密度記憶媒体用基板として十分でない。ま
たアルミニウム合金は軟かい材料で、ヤング率および表
面硬度が低いため、ドライブの高速回転において振動が
激しく変形が生じやすいということや、薄形化に対応す
ることが難しいという欠点を有している。更にヘッドの
接触により、メディアを損傷させてしまったり、高速回
転化に対する変形等、今日の高密度記録化の要求に十分
対応できない。Conventionally, an aluminum alloy has been used as a magnetic disk substrate material. However, in the aluminum alloy substrate, due to the influence of various material defects, protrusions or spot-shaped irregularities are generated on the substrate surface during the polishing process, and the surface is smooth. In terms of properties, it is not sufficient as the substrate for the high density storage medium. Further, since aluminum alloy is a soft material and has a low Young's modulus and surface hardness, it has drawbacks that it is apt to be violently deformed during high-speed rotation of the drive and it is difficult to cope with thinning. . Further, the contact of the head may damage the medium or may not be able to sufficiently meet today's demands for high-density recording, such as deformation due to high-speed rotation.
【0006】また、アルミニウム合金基板の問題点を解
消する材料として化学強化ガラスのアルミノシリケート
ガラス(SiO2−Al2O3−Na2O)などが知られて
いるが、この場合、
(1)研磨は化学強化後に行なわれ、ディスクの薄板化
における強化層の不安定要素が高い。
(2)ガラス中にLi2O,Na2O,K2O成分を必須
成分として含有するため、成膜特性が悪化し、Li
2O,Na2O,K2O溶出防止のためのエッチング処理
や全面バリアコート処理が必要となる。また基板の微少
うねり等の問題等、製品の低コスト安定生産性において
難しいという欠点がある。Aluminosilicate glass (SiO 2 —Al 2 O 3 —Na 2 O), which is a chemically strengthened glass, is known as a material for solving the problems of the aluminum alloy substrate. In this case, (1) Polishing is performed after chemical strengthening, and the instability factor of the strengthening layer in thinning the disk is high. (2) Since the glass contains Li 2 O, Na 2 O, and K 2 O components as essential components, the film forming characteristics deteriorate, and Li
Etching treatment for preventing elution of 2 O, Na 2 O, and K 2 O and overall barrier coating treatment are required. Further, there is a drawback that it is difficult to achieve low cost and stable productivity of products, such as a problem such as a slight waviness of a substrate.
【0007】そして、前記化学強化したガラス基板の欠
点を克服する材料として、結晶化ガラスが挙げられる。
特開平6−329440号公報に記載のSiO2−Li2
O−MgO−P2O5系結晶化ガラスは、主結晶相として
二珪酸リチウム(Li2O・2SiO2)およびα−クォ
ーツ(α−SiO2)を有し、α−クォーツ(α−Si
O2)の球状粒子サイズをコントロールする事で、従来
のメカニカルテクスチャ、ケミカルテクスチャを不用と
し、研磨して成る表面粗度Ra(算術平均粗さ)を15
〜50Åの範囲で制御を可能とした、基板表面全面テク
スチャ材として非常に優れた材料である。しかし、今日
目標とする表面粗度Ra(算術平均粗さ)は、5.0Å
以下、より好ましくは3.0Å以下、さらに好ましくは
2.0Å以下であり、急速に進む記録容量向上に合せた
低浮上化に十分対応することができない。また、主結晶
相に二珪酸リチウム(Li2O・2SiO2)を含むもの
であり、化学強化ガラスよりも少量ではあるが、今日求
められつつある更なるアルカリ成分の溶出量低減や研磨
時に生じる微小なピットの問題に関して何ら議論されて
いない。As a material that overcomes the drawbacks of the chemically strengthened glass substrate, there is crystallized glass.
SiO described in JP-A-6-329440 2 -Li 2
O-MgO-P 2 O 5 based crystallized glass has lithium disilicate (Li 2 O · 2SiO 2) and alpha-quartz (α-SiO 2) as main crystal phase, alpha-quartz (alpha-Si
By controlling the spherical particle size of O 2 ), the surface roughness Ra (arithmetic mean roughness) obtained by polishing without using the conventional mechanical texture and chemical texture is 15
It is a very excellent material as a textured material on the entire surface of the substrate, which can be controlled in the range of up to 50Å. However, today's target surface roughness Ra (arithmetic mean roughness) is 5.0Å
Hereafter, it is more preferably 3.0 Å or less, and further preferably 2.0 Å or less, and it is not possible to sufficiently cope with the low flying height in line with the rapid increase in recording capacity. Further, it contains lithium disilicate (Li 2 O.2SiO 2 ) in the main crystal phase, and although it is in a smaller amount than chemically strengthened glass, it is generated during polishing and further elution of alkaline components which is required today. There is no discussion about the issue of small pits.
【0008】特開平10−45426号公報に記載のS
iO2−Li2O−K2O−MgO−ZnO−P2O5−A
l2O3系または、SiO2−Li2O−K2O−MgO−
ZnO−P2O5−Al2O3−ZrO2系結晶化ガラス
は、主結晶相が二珪酸リチウム(Li2O・2Si
O2),二珪酸リチウム及びα−クォーツ(α−Si
O2)の混晶、または二珪酸リチウム及びα−クリスト
バライト(α−SiO2)の混晶の少なくとも一種以上
であることを特徴とした、レーザーテクスチャー用ガラ
スセラミックスが開示されている。しかし、今日目標と
する表面粗度Ra(算術平均粗さ)は5.0Å以下、よ
り好ましくは3.0Å以下、さらに好ましくは2.0Å
以下であり、急速に進む記録容量向上に合せた低浮上化
に対応するに不十分であり、更に主結晶相に二珪酸リチ
ウム(Li2O・2SiO2)を含むものであるため、今
日求められつつある更なるアルカリ成分の溶出量低減や
研磨時に生じる微小なピットの問題に関して何ら議論さ
れていない。S described in JP-A-10-45426
iO 2 -Li 2 O-K 2 O-MgO-ZnO-P 2 O 5 -A
1 2 O 3 system or SiO 2 —Li 2 O—K 2 O—MgO—
ZnO-P 2 O 5 -Al 2 O 3 -ZrO 2 based crystallized glass, the main crystal phases of lithium disilicate (Li 2 O · 2Si
O 2 ), lithium disilicate and α-quartz (α-Si
Disclosed is a glass-ceramic for laser texture characterized by being a mixed crystal of O 2 ) or at least one kind of a mixed crystal of lithium disilicate and α-cristobalite (α-SiO 2 ). However, today's target surface roughness Ra (arithmetic mean roughness) is 5.0 Å or less, more preferably 3.0 Å or less, and further preferably 2.0 Å
The following is not enough to cope with the low flying height in line with the rapid increase in recording capacity, and further, lithium disilicate (Li 2 O.2SiO 2 ) is contained in the main crystal phase, so that it is required today. There is no discussion about the problem of further elution of a certain amount of alkaline components and the problem of minute pits that occur during polishing.
【0009】特開平9−35234号公報には、SiO
2−Al2O3−Li2O系ガラスにおいて、主結晶相が二
珪酸リチウム(Li2O・2SiO2)とβ−スポジュー
メン(Li2O・Al2O3・4SiO2)からなる磁気デ
ィスク用基板が記載されているが、この結晶化ガラスの
主結晶相は、負の熱膨張特性(結果として基板は低膨張
特性となる)を有するβ−スポジューメン(Li2O・
Al2O3・4SiO2)であり、α−石英(α−Si
O2)やα−クリストバライト(α−SiO2)結晶等S
iO2系の正の熱膨張特性(結果として基板は高膨張特
性となる)を有する結晶の析出を規制したものである。
この結晶化ガラスは、磁気ディスクとしての研磨して成
る表面粗度Ra(算術平均粗さ)は、20Å以下(実施
例で開示される表面粗度Ra(算術平均粗さ)は12〜
17Å)と、現在の要求に対してはまだ粗く、記憶容量
向上に伴う磁気ヘッドの低浮上化に十分対応することが
できない。また、主結晶として負の熱膨張特性を有する
結晶を析出させた材料は、情報記憶媒体装置の構成部品
との平均線膨張係数の差に関して悪影響を与える事は明
白である。加えて結晶化熱処理温度に関しても820〜
920℃と高温を必要とし、低コスト、量産性を妨げる
ものであると同時に、主結晶相は二珪酸リチウム(Li
2O・2SiO2)であり、今日求められつつある更なる
アルカリ成分の溶出量低減や研磨時に生じる微小なピッ
トの問題に関して何ら議論されていない。In Japanese Unexamined Patent Publication No. 9-35234, SiO is disclosed.
2 -Al 2 O 3 -Li 2 in O-based glass, a magnetic disk main crystalline phase consists lithium disilicate (Li 2 O · 2SiO 2) and β- spodumene (Li 2 O · Al 2 O 3 · 4SiO 2) Although the substrate for use is described, the main crystalline phase of this crystallized glass is β-spodumene (Li 2 O.) which has negative thermal expansion properties (resulting in low expansion properties of the substrate).
Al 2 O 3 .4SiO 2 ) and α-quartz (α-Si
O 2 ) and α-cristobalite (α-SiO 2 ) crystals such as S
It regulates the precipitation of crystals having the positive thermal expansion characteristics of the iO 2 system (resulting in the substrate having high expansion characteristics).
This crystallized glass has a surface roughness Ra (arithmetic mean roughness) of 20 Å or less formed by polishing as a magnetic disk (the surface roughness Ra (arithmetic mean roughness) disclosed in Examples is 12 to 20).
17 Å), which is still inferior to the current demand, and cannot sufficiently cope with the low flying height of the magnetic head accompanying the improvement in storage capacity. Further, it is obvious that the material in which the crystal having the negative thermal expansion characteristic is deposited as the main crystal has a bad influence on the difference in the average linear expansion coefficient with the components of the information storage medium device. In addition, regarding the crystallization heat treatment temperature,
It requires a high temperature of 920 ° C., which hinders low cost and mass productivity, while the main crystal phase is lithium disilicate (Li
2 O · 2 SiO 2 ) and no further discussion has been made on the problem of the further reduction in the elution amount of alkali components and the problem of minute pits generated during polishing, which are required today.
【0010】国際公開番号WO97/01164には、
上記特開平9−35234号公報を含み、新たに上記組
成系の結晶化熱処理を低温化(680〜770℃)し
た、磁気ディスク用結晶化ガラスが開示されているが、
その改善効果は不十分であり、実施例中で開示されるす
べての結晶化ガラスの結晶相は、やはり負の熱膨張特性
を有する、β−ユークリプタイト(Li2O・Al2O3
・2SiO2)を析出させるものであり、情報記憶媒体
装置の構成部品との平均線膨張係数の差に関して悪影響
を与えてしまう。また、主結晶相は二珪酸リチウム(L
i2O・2SiO2)であり、今日求められつつある更な
るアルカリ成分の溶出量低減や研磨時に生じる微小なピ
ットの問題に関して何ら議論されていない。International publication number WO 97/01164 includes
Japanese Patent Application Laid-Open No. 9-35234 discloses a crystallized glass for a magnetic disk, which is obtained by newly lowering the crystallization heat treatment of the composition system (680 to 770 ° C.).
The improvement effect is insufficient, and the crystal phases of all the crystallized glasses disclosed in the examples have β-eucryptite (Li 2 O.Al 2 O 3) also having negative thermal expansion characteristics.
2SiO 2 ) is deposited, which adversely affects the difference in the average linear expansion coefficient from the components of the information storage medium device. The main crystal phase is lithium disilicate (L
i 2 O · 2SiO 2 ), and no further discussion has been made on the problem of further reduction of the elution amount of alkali components and the problem of minute pits generated during polishing, which are required today.
【0011】特開平11−343143号公報には、S
iO2−Al2O3−MgO−Y2O3−TiO2−Li2O
系ガラスにおいて、主結晶相が石英固溶体(MgO−A
l2O3−SiO2系からなる石英固溶体)にエンスタタ
イト(MgAl2O3)を含む情報記録媒体用基板が開示
されているが、この結晶化ガラスの主結晶相は、負の熱
膨張特性(結果として基板は低膨張特性となる)を有す
るβ−石英固溶体結晶を含む物であるため、本発明のα
−クォーツおよびα−クリストバライトならびにこれら
の固溶体を含有するものとでは、熱膨張特性の観点から
全く異なる基板であり、したがって本願において述べて
いる所望の平均線膨張係数を得ることは難しいものであ
る。In Japanese Patent Laid-Open No. 11-343143, S
iO 2 -Al 2 O 3 -MgO- Y 2 O 3 -TiO 2 -Li 2 O
In the system glass, the main crystal phase is a quartz solid solution (MgO-A).
A substrate for an information recording medium containing enstatite (MgAl 2 O 3 ) in a quartz solid solution (l 2 O 3 —SiO 2 system) is disclosed. The main crystal phase of this crystallized glass has a negative thermal expansion. Since α-quartz solid solution crystals having properties (resulting in low expansion properties of the substrate) are included in the α of the present invention,
-Quartz and α-cristobalite and those containing these solid solutions are completely different substrates from the viewpoint of thermal expansion characteristics, and thus it is difficult to obtain the desired average linear expansion coefficient described in the present application.
【0012】次に、光フィルター向けの用途としては、
特定の波長をカットしたり透過するもの、波長によらず
光強度を落とすものなどがある。前者の光フィルターに
は、特定の波長のみを透過するバンドパスフィルター、
特定の波長のみをカットするノッチパスフィルター、特
定の波長より短波長や長波長のみを透過するハイパスフ
ィルター、ローパスフィルターなどがあり、後者の光フ
ィルターには、NDフィルターがある。Next, as the use for the optical filter,
There are those that cut or transmit a specific wavelength and those that reduce the light intensity regardless of the wavelength. The former optical filter is a bandpass filter that transmits only specific wavelengths.
There are a notch pass filter that cuts only a specific wavelength, a high pass filter that transmits only a wavelength shorter or a longer wavelength than a specific wavelength, a low pass filter, and the like, and the latter optical filter includes an ND filter.
【0013】また、光フィルターには吸収型と干渉型等
がある。吸収型光フィルターには代表的なものとしてN
Dフィルター等があり、干渉型光フィルターには、代表
的なものとしてバンドパスフィルターが挙げられる。写
真用等の吸収型光フィルターには基体としてプラスチッ
クが用いられているが、強いレーザーを用いる場合の光
フィルターの基板には、耐久性・耐熱性が要求の観点か
らもっぱらアモルファスガラスが用いられている。The optical filter is classified into an absorption type and an interference type. N is a typical absorption type optical filter.
There is a D filter or the like, and a typical example of the interference type optical filter is a bandpass filter. Although plastic is used as a substrate for absorption type optical filters for photography and the like, amorphous glass is mainly used for the substrate of optical filters when a strong laser is used from the viewpoint of durability and heat resistance. There is.
【0014】バンドパスフィルターは、ガラスなどの基
板材上に例えば、高い屈折率を持つ誘電体薄膜(H層)
と低い屈折率を持つ誘電体薄膜(L層)を交互に積層し
た構造の誘電体多層膜を形成したものが用いられる。A bandpass filter is, for example, a dielectric thin film (H layer) having a high refractive index on a substrate material such as glass.
And a dielectric multilayer film having a structure in which dielectric thin films (L layers) having a low refractive index are alternately laminated is used.
【0015】WDM(Wavelength Divi
sion Multiplexing:波長分割多重方
式)、更にDWDM(Dense Wavelengt
hDivision Multiplexing:高密
度波長分割多重方式)光通信システムに用いられるバン
ドパスフィルターにおいては、通過波長のバンド幅を狭
く設定し、送受信する信号を高密度波長にしようとする
場合、バンドの中心波長の温度安定性が問題となる。す
なわち、わずかな温度変化に対してもバンドの中心波長
が変動してしまう敏感な素子であるため、その使用にお
いては温度コントローラーで温度補償を行うべきである
が、用いる際のスペース的な問題により事実上温度コン
トローラーをつけることができない。この中心波長の温
度安定性は、光情報量が増加するに伴い、バンド幅を狭
くする必要があるため、その重要性は更に増すものであ
る。WDM (Wavelength Divi)
ssion Multiplexing: DWDM (Dense Wavelength)
hDivision Multiplexing: In a bandpass filter used in an optical communication system, when the bandwidth of the passing wavelength is set narrow and the signal to be transmitted / received is made to have a high density wavelength, the center wavelength of the band is Temperature stability becomes a problem. In other words, since it is a sensitive element in which the center wavelength of the band fluctuates even with a slight temperature change, temperature compensation should be performed with a temperature controller in its use, but due to space problems when using it You can't practically turn on the temperature controller. This temperature stability of the central wavelength is more important because it is necessary to narrow the bandwidth as the amount of optical information increases.
【0016】従来、バンドパスフィルターの基板材に
は、前述のようにアモルファスガラスが使用されている
が、熱膨張特性が十分高くなく、機械的強度も低いた
め、膜に与える圧縮応力および耐久性の面でも充分なも
のでなかった。更に、アモルファスガラスは表面硬度が
低く、しかも大きい熱膨張特性を得るにはアルカリ成分
を多量に含有させる必要があるため、成膜時のアルカリ
溶出や経時的なアルカリ溶出等の問題を有し、将来の光
フィルター用基板材、特にバンドパスフィルター用基板
材としての要求に十分対応できない。Conventionally, as described above, amorphous glass is used as the substrate material of the bandpass filter, but since the thermal expansion characteristics are not sufficiently high and the mechanical strength is low, the compressive stress and durability applied to the film are reduced. It wasn't good enough. Furthermore, amorphous glass has a low surface hardness, and since it needs to contain a large amount of an alkali component in order to obtain large thermal expansion characteristics, it has problems such as alkali elution during film formation and alkali elution over time. It cannot fully meet the requirements for future optical filter substrate materials, especially bandpass filter substrate materials.
【0017】[0017]
【発明が解決しようとする課題】本発明の目的は、上記
従来技術に見られる諸欠点を解消しつつ、情報記憶媒体
の記憶容量の増大に伴う基板の超平滑化およびアルカリ
成分溶出問題を回避したガラスセラミックス、および上
記従来技術に見られる諸欠点を解消しつつ、光フィルタ
ー(特にバンドパスフィルターやGain−Flatt
eningフィルター)において、単層もしくは多層膜
を形成したフィルター部材の使用温度における中心波長
の変動を回避する(すなわち基板材料を高熱膨張係数と
して、これにより膜に圧縮応力を与え、膜の温度に対す
る中心波長の安定性を向上させる。)ための膨張特性
と、耐久性および加工性を考慮した機械的特性を兼ね備
え、かつガラスセラミックス自体は良好な光線透過率を
有するという、従来にない光フィルター用ガラスセラミ
ックス基板材を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned drawbacks of the prior art while avoiding the problems of super-smoothing of the substrate and elution of alkaline components with the increase in storage capacity of the information storage medium. While eliminating the above-mentioned glass ceramics and various drawbacks found in the above-mentioned prior art, an optical filter (particularly a bandpass filter or a Gain-Flatt) is provided.
Ening filter) avoids the fluctuation of the central wavelength at the operating temperature of the filter member formed with a single-layer or multi-layered film (that is, the substrate material has a high coefficient of thermal expansion, which gives a compressive stress to the film, and the center of the film with respect to the temperature). A glass for optical filters, which has never been before, having both expansion characteristics for improving wavelength stability) and mechanical characteristics in consideration of durability and processability, and the glass ceramics itself has a good light transmittance. It is to provide a ceramic substrate material.
【0018】[0018]
【課題を解消するための手段】本発明者は、上記目的を
達成するために鋭意試験研究を重ねた結果、特定の原ガ
ラスを特定の熱処理条件により処理する事により、主結
晶相にα−クリストバライト,α−クリストバライト固
溶体,α−クォーツ,α−クォーツ固溶体の中から選ば
れる少なくとも1種以上を含有しつつも、二珪酸リチウ
ム(Li2O・2SiO2),珪酸リチウム(Li2O・
SiO2),β−スポジューメン,β−ユークリプタイ
ト,β−石英,マイカおよびフルオロリヒテライト(flu
orrichiterite)を実質的に含まないため、今日求められ
つつある更なるアルカリ成分の溶出量低減や研磨時に生
じる微小なピットの問題に対応でき、結晶粒子について
も非常に微細(0.1μm未満)に制御でき、研磨して
成る表面平滑性も従来より低いものが得られ、ドライブ
構成部品に合致する熱膨張特性に制御可能な、情報記憶
媒体用基板に好適なガラスセラミックスが得られると共
に、更にこれらが有する特定の熱膨張係数範囲や機械的
強度や光線透過率が、光フィルター用のガラスセラミッ
クス(特にWDMおよびDWDM用バンドパスフィルタ
ー向けや、Gain−Flatteningフィルター
向け)として非常に有用であることを見出し、本発明に
至ったものである。Means for Solving the Problems As a result of extensive studies conducted in order to achieve the above object, the present inventor has found that the main crystal phase is α- Lithium disilicate (Li 2 O · 2SiO 2 ), lithium silicate (Li 2 O ·) while containing at least one selected from cristobalite, α-cristobalite solid solution, α-quartz, and α-quartz solid solution.
SiO 2 ), β-spodumene, β-eucryptite, β-quartz, mica and fluororichterite (flu
orrichiterite) is not substantially contained, it is possible to deal with the problem of further elution of alkaline components and fine pits that occur during polishing, which are required today, and crystal particles are also extremely fine (less than 0.1 μm). It is possible to obtain glass ceramics that can be controlled and have a lower surface smoothness than that of conventional ones, and that can be controlled to have thermal expansion characteristics that match drive components, and that is suitable for glass substrates for information storage media. That the specific thermal expansion coefficient range, mechanical strength, and light transmittance that are possessed by are extremely useful as glass ceramics for optical filters (especially for WDM and DWDM bandpass filters and Gain-Flattening filters). The present invention has been found under the heading.
【0019】すなわち、請求項1に記載の発明は、主結
晶相にα−クリストバライト,α−クリストバライト固
溶体,α−クォーツ,α−クォーツ固溶体の中から選ば
れる少なくとも1種以上を含有しつつも、二珪酸リチウ
ム(Li2O・2SiO2),珪酸リチウム(Li2O・
SiO2),β−スポジューメン,β−ユークリプタイ
ト,β−石英,マイカおよびフルオロリヒテライト(fl
uorrichterite)を実質的に含有せず、更にCr成分お
よびMn成分を実質的に含まず、−50〜+70℃にお
ける平均線膨張係数が+65×10-7〜+140×10
-7/℃の範囲であり、主結晶相の結晶粒子径(平均)が
0.10μm未満であること特徴とする、ガラスセラミ
ックスであり、請求項2に記載の発明は、ヤング率が8
0GPa以上であることを特徴とする、請求項1に記載
のガラスセラミックスであり、請求項3に記載の発明
は、比重が2.3〜2.7であることを特徴とする、請
求項1または2に記載のガラスセラミックスであり、請
求項4に記載の発明は、板厚10mm材の光線透過率
が、波長950〜1600nmにおいて90%以上であ
ることを特徴とする、請求項1,2,3のいずれかに記
載のガラスセラミックスであり、請求項5に記載の発明
は、曲げ強度が250MPa以上であることを特徴とす
る、請求項1,2,3,4のいずれかに記載のガラスセ
ラミックスであり、請求項6に記載の発明は、ビッカー
ス硬度が600〜800であることを特徴とする、請求
項1,2,3,4,5のいずれかに記載のガラスセラミ
ックスであり、請求項7に記載の発明は、ガラスセラミ
ックスの組成は質量百分率(酸化物基準)で、
SiO2 65 〜75%
Li2O 4 〜 7未満%
K2O 0 〜 3%
Na2O 0 〜 3%
MgO+ZnO+SrO+BaO+CaO 2 〜 15%
Y2O3+WO3+La2O3+Bi2O3 0 〜 3%
SnO2 0 〜 3%
P2O5 1.0〜 2.5%
ZrO2 2.0〜 7%
Al2O3 5 〜 9%
Sb2O3+As2O3 0 〜 1%
の範囲の各成分を含有することを特徴とする、請求項
1,2,3,4,5,6のいずれかに記載のガラスセラ
ミックスであり、請求項8に記載の発明は、原ガラスを
400℃〜600℃で1〜7時間熱処理して核形成した
後、650℃〜750℃で1〜7時間熱処理して結晶成
長させて得られることを特徴とする、請求項1,2,
3,4,5,6,7のいずれかに記載のガラスセラミッ
クスである。That is, the invention according to claim 1 contains at least one selected from α-cristobalite, α-cristobalite solid solution, α-quartz, and α-quartz solid solution in the main crystal phase, Lithium disilicate (Li 2 O ・ 2SiO 2 ), lithium silicate (Li 2 O ・
SiO 2 ), β-spodumene, β-eucryptite, β-quartz, mica and fluororichterite (fl
uorrichterite) and substantially no Cr and Mn components, and an average linear expansion coefficient at −50 to + 70 ° C. of + 65 × 10 −7 to + 140 × 10.
Glass ceramics, characterized in that the crystal grain size (average) of the main crystal phase is less than 0.10 μm in the range of −7 / ° C., and the Young's modulus of the invention according to claim 2 is 8
It is 0 GPa or more, It is glass ceramics of Claim 1 characterized by the above-mentioned, The invention of Claim 3 is characterized by specific gravity being 2.3-2.7. The glass ceramic according to claim 2, or the invention according to claim 4, wherein the light transmittance of a material having a plate thickness of 10 mm is 90% or more at a wavelength of 950 to 1600 nm. The glass ceramic according to any one of claims 1 and 3, and the invention according to claim 5 has a bending strength of 250 MPa or more. The invention is a glass-ceramic, and the invention according to claim 6 has a Vickers hardness of 600 to 800. The glass-ceramic according to any one of claims 1, 2, 3, 4, and 5, Claim The invention according to is the composition of the glass ceramic mass percentage (oxide basis), less than SiO 2 65 ~75% Li 2 O 4 ~ 7% K 2 O 0 ~ 3% Na 2 O 0 ~ 3% MgO + ZnO + SrO + BaO + CaO 2 〜15% Y 2 O 3 + WO 3 + La 2 O 3 + Bi 2 O 3 0 to 3% SnO 2 0 to 3% P 2 O 5 1.0 to 2.5% ZrO 2 2.0 to 7% Al 2 O 35 and ~ 9% Sb 2 O 3 + as 2 O 3 0 , characterized in that it contains the components of ~ 1% range, according to any of claims 1,2,3,4,5,6 According to the invention of claim 8, the raw glass is heat-treated at 400 ° C to 600 ° C for 1 to 7 hours to form nuclei, and then heat-treated at 650 ° C to 750 ° C for 1 to 7 hours for crystal growth. Claims 1, 2, characterized in that it is obtained by
The glass ceramic according to any one of 3, 4, 5, 6, and 7.
【0020】本明細書中「二珪酸リチウム………を実質
的に含まず」とは、当該成分の含有量がガラスセラミッ
クスの物理的化学的な特性に影響を及ぼさない程度すな
わち3%未満、好ましくは1%未満もしくは不純物レベ
ルであることを意味する。In the present specification, "substantially free of lithium disilicate ..." Does not affect the physicochemical properties of the glass ceramics, that is, less than 3%, It preferably means less than 1% or an impurity level.
【0021】また、本明細書中「Cr成分………を実質
的に含まず」とは、当該成分の含有量がガラスセラミッ
クスの物理的化学的な特性に影響を与えない程度すなわ
ち不純物レベルであることを意味する。Further, in the present specification, "substantially free of Cr component ... ......" means that the content of the component does not affect the physical and chemical characteristics of the glass ceramics, that is, at the impurity level. Means there is.
【0022】本発明のガラスセラミックスの主結晶相と
その結晶粒子径(平均)・平均線膨張係数、表面特性、
組成、熱処理条件等を限定した理由を以下に述べる。
尚、組成は原ガラスと同様酸化物基準の質量%で表示す
る。尚、本明細書において主結晶相とは、析出比が比較
的大きい結晶相全てを指す。すなわち、X線回折におけ
るX線チャート(縦軸はX線回折強度,横軸は回折角
度)において、もっとも析出割合の多い結晶相のメイン
ピーク(もっとも高いピーク)のX線回折強度を100
とした場合、各析出結晶相のメインピーク(各結晶相に
おけるもっとも高いピーク)のX線回折強度の比(以
下、X線強度比という。)が30以上あるもの全てを主
結晶相という。The main crystal phase of the glass-ceramics of the present invention and the crystal grain size (average) / average linear expansion coefficient, surface characteristics,
The reasons for limiting the composition, heat treatment conditions, etc. will be described below.
The composition is expressed in mass% based on the oxide as in the original glass. In the present specification, the main crystal phase refers to all crystal phases having a relatively large precipitation ratio. That is, in the X-ray chart in X-ray diffraction (the vertical axis is the X-ray diffraction intensity, the horizontal axis is the diffraction angle), the X-ray diffraction intensity of the main peak (highest peak) of the crystal phase with the highest precipitation ratio is 100.
In such a case, all those having a ratio of X-ray diffraction intensities (hereinafter, referred to as X-ray intensity ratio) of main peaks (highest peaks in each crystal phase) of each precipitated crystal phase of 30 or more are called main crystal phases.
【0023】まず、主結晶相についてであるが、所望の
熱膨張係数を得るためには主結晶相に比較的大きい正の
膨張係数を有する、α−クリストバライト,α−クリス
トバライト固溶体,α−クォーツ,α−クォーツ固溶体
の中から選ばれる少なくとも1種以上を含むものが好ま
しい。特に、前記の主結晶相を選ぶことによって、化学
的耐久性、物理的特性にも優れるものを容易に得ること
ができる。尚、主結晶相以外の結晶のX線強度比は20
未満が好ましく、更に好ましくは10未満、もっとも好
ましくは5未満である。First, regarding the main crystalline phase, in order to obtain a desired thermal expansion coefficient, α-cristobalite, α-cristobalite solid solution, α-quartz, which has a relatively large positive expansion coefficient in the main crystalline phase, Those containing at least one selected from α-quartz solid solutions are preferable. In particular, by selecting the above-mentioned main crystal phase, it is possible to easily obtain one having excellent chemical durability and physical properties. The X-ray intensity ratio of crystals other than the main crystal phase is 20.
It is preferably less than 10, more preferably less than 10, and most preferably less than 5.
【0024】そして、主結晶相に二珪酸リチウムを含有
させないことで、研磨加工時のメカノケミカル的な影響
による、基板表面の微細な穴(ピット)を低減化する事
が可能となるので含まないことが好ましい。尚、本発明
のガラスセラミックスの主結晶相には、負の熱膨張特性
を有するβ−スポジューメン,β−ユークリプタイト,
β−クリストバライト(β−SiO2)や、その他珪酸
リチウム(Li2O・SiO2),ディオプサイト,エン
スタタイト,マイカ,α−トリディマイト,フルオロリ
ヒテライト(fluorrichiterite)等も極力含まないことが
好ましい。By not containing lithium disilicate in the main crystal phase, it is possible to reduce fine holes (pits) on the surface of the substrate due to the mechanochemical influence at the time of polishing. It is preferable. The main crystal phase of the glass-ceramics of the present invention includes β-spodumene, β-eucryptite, which has negative thermal expansion characteristics,
It is preferable that β-cristobalite (β-SiO 2 ), other lithium silicate (Li 2 O.SiO 2 ), diopsite, enstatite, mica, α-tridymite, fluorrichiterite and the like are not included as much as possible. .
【0025】次に平均線膨張係数について詳述する。記
録密度の向上に伴い、磁気ヘッドと媒体のポジショニン
グに高精度を要するため、媒体基板や磁気情報記憶装置
の各構成部品には高い寸法精度が要求される。そのため
これら構成部品に対する平均線膨張係数の差の影響も無
視できなくなるので、これら平均線膨張係数の差を極力
少なくしなければならない。さらに厳密には、これら構
成部品の平均線膨張係数よりも媒体基板の平均線膨張係
数は極くわずかに大きいことが好ましい場合が多い。特
に小型の磁気情報記憶媒体に使用される構成部品の熱膨
脹係数は、+90×10-7〜+100×10-7/℃程度
のものが良く用いられており、基板もこの程度の熱膨脹
係数が必要とされるが、ドライブメーカーによってはこ
の範囲からはずれた熱膨脹係数(+60前後〜+135
前後×10-7/℃)を有する材料を構成部品に用いる場
合がある。以上のような理由により、本発明の結晶系で
強度との兼ね合いを図りながら、用いる構成部品の材質
に広く対応しうるよう、平均線膨張係数範囲を決めなけ
ればならず、その範囲は−50〜+70℃の範囲におい
て、+65×10 -7 /℃〜+140×10-7/℃である
ことが好ましい。尚、平均線膨張係数は+70×10-7
/℃以上がより好ましく、+120×10-7/℃以下が
更に好ましい。Next, the average linear expansion coefficient will be described in detail. As the recording density is improved, positioning of the magnetic head and the medium is required to be highly accurate, so that high dimensional accuracy is required for each component of the medium substrate and the magnetic information storage device. Therefore, the influence of the difference in the average linear expansion coefficient on these components cannot be ignored, and the difference in these average linear expansion coefficients must be minimized. More strictly, it is often preferable that the average linear expansion coefficient of the medium substrate is extremely slightly larger than the average linear expansion coefficient of these components. Particularly, the thermal expansion coefficient of the components used for a small-sized magnetic information storage medium is often + 90 × 10 −7 to + 100 × 10 −7 / ° C., and the substrate needs to have such a thermal expansion coefficient. However, depending on the drive manufacturer, the coefficient of thermal expansion deviates from this range (around +60 to +135
A material having a front-back direction of 10 −7 / ° C.) may be used for the component. For the above reasons, the average linear expansion coefficient range must be determined so that the crystal system of the present invention can be widely compatible with the materials of the components to be used while striking the balance with the strength, and the range is −50. in the range of ~ + 70 ° C., it is preferably + 65 × 10 -7 / ℃ ~ + 140 × 10 -7 / ℃. The average linear expansion coefficient is + 70 × 10 -7
/ ° C. or higher is more preferable, and + 120 × 10 −7 / ° C. or lower is further preferable.
【0026】また、光フィルター用ガラスセラミックス
の面から見ると、前述のようにバンドの中心波長の温度
安定性は非常に重要であり、膜構成物質の熱膨張係数よ
り大きいものが必要である。この理由を以下に述べる。
特にバンドパスフィルターやGain−Flatten
ingフィルター等において、温度に対する中心波長の
安定性は薄膜を構成する誘電体の屈折率温度係数に依存
するが、それ以外にも基板材の熱膨張係数に大きく影響
を受ける。これは屈折率が薄膜の充填率によって決定さ
れることに起因する。すなわち、薄膜の充填率が高いほ
ど(すなわち屈折率が高いほど)中心波長の温度による
変化は小さくなる。そして薄膜の充填率はこれを成膜し
ている光フィルター基板材の熱膨張係数に大きく影響を
受けるものである。つまり、成膜時の基板材は約200
℃前後となるが、その熱によって基板材自体は大きく膨
張しており、薄膜はその膨張した基板材に成膜され、次
いで基板材が冷却されるにしたがって、それらの熱膨張
係数の差により薄膜は圧縮応力を受ける。その結果、薄
膜の充填率が高くなるに伴って屈折率が高くなり、この
ため透過光の中心波長の温度に対する安定性は向上す
る。そして、屈折率は一定の応力以上においてその変化
量が飽和傾向となり、圧縮応力を高めても屈折率変化の
高くなる割合は少なくなる。このような理由により、基
板材の熱膨張係数が大きければ大きいほど成膜された誘
電体薄膜にかかる圧縮応力は大きくなり、その結果、使
用温度による屈折率の変動が少なくなる。したがって、
中心波長の温度安定性を重視した場合、誘電体薄膜の熱
膨張係数よりもガラスセラミックスの熱膨張係数を大き
く設定することが望ましい。From the viewpoint of glass ceramics for optical filters, the temperature stability of the central wavelength of the band is very important as described above, and it is necessary that the coefficient of thermal expansion be larger than that of the film constituent material. The reason for this will be described below.
Especially band pass filters and Gain-Flatten
In an ing filter or the like, the stability of the central wavelength with respect to temperature depends on the temperature coefficient of refractive index of the dielectric material that constitutes the thin film, but besides that, it is greatly affected by the thermal expansion coefficient of the substrate material. This is because the refractive index is determined by the filling factor of the thin film. That is, the higher the filling factor of the thin film (that is, the higher the refractive index), the smaller the change in the central wavelength with temperature. The filling factor of the thin film is greatly influenced by the thermal expansion coefficient of the optical filter substrate material on which the thin film is formed. That is, the substrate material during film formation is about 200
Although the temperature is around ℃, the substrate material itself greatly expands due to the heat, and the thin film is formed on the expanded substrate material, and as the substrate material is cooled, the difference in the coefficient of thermal expansion causes the thin film. Undergoes compressive stress. As a result, the refractive index increases as the filling rate of the thin film increases, and thus the stability of the central wavelength of transmitted light with respect to temperature is improved. The change in the refractive index tends to saturate above a certain stress, and the rate of increase in the change in the refractive index decreases even if the compressive stress is increased. For this reason, the larger the thermal expansion coefficient of the substrate material, the greater the compressive stress applied to the formed dielectric thin film, and as a result, the variation in the refractive index due to the operating temperature decreases. Therefore,
When the temperature stability of the central wavelength is emphasized, it is desirable to set the thermal expansion coefficient of the glass ceramics larger than the thermal expansion coefficient of the dielectric thin film.
【0027】本発明者が試験研究を行った結果、−20
℃〜+70℃における熱膨張係数が65×10-7/℃以
上とすると、バンドパスフィルターやGain−Fla
tteningフィルター等として使用する温度範囲に
おいて、膜に十分な圧縮応力を与えることができること
が判明した。しかしその一方で140×10-7/℃を越
えると、膜との熱膨張係数差が大きくなりすぎて、膜の
剥離等の問題を生じやすくなる。より好ましい範囲は9
0×10-7/℃以上、130×10-7/℃以下、更に好
ましい範囲は95×10-7/℃以上、125×10-7/
℃以下の範囲である。As a result of the test research conducted by the present inventor, -20
If the coefficient of thermal expansion at ℃ to +70 ℃ is 65 × 10 -7 / ℃ or more, band-pass filter and Gain-Fla
It was found that a sufficient compressive stress can be applied to the film in the temperature range used as a tenting filter or the like. On the other hand, however, when it exceeds 140 × 10 −7 / ° C., the difference in thermal expansion coefficient from the film becomes too large, and problems such as peeling of the film tend to occur. A more preferable range is 9
0 × 10 −7 / ° C. or higher, 130 × 10 −7 / ° C. or lower, more preferable range is 95 × 10 −7 / ° C. or higher, 125 × 10 −7 /
It is in the range of ℃ or less.
【0028】次に主結晶相の結晶粒子径(平均)につい
て述べる。前述のように、情報記憶媒体の面記録密度向
上に伴い、ヘッドの浮上高さが0.025μm以下と著
しく低下、すなわち、ニアコンタクトレコーディング方
式あるいは完全に接触するコンタクトレコーディング方
式へ進みつつある現在、これに対応するには、ディスク
表面の平滑性は従来品よりも良好でなければならない。
従来レベルの平滑性で磁気記録媒体への高密度な入出力
を行おうとしても、ヘッドと媒体間の距離が大きいた
め、磁気信号の入出力を行うことができない。またこの
距離が小さくなると、媒体の突起とヘッドが衝突し、ヘ
ッド破損や媒体破損を生じてしまう。したがって、この
著しく低い浮上高さもしくは接触状態でもヘッド破損や
媒体破損を引き起こさない様にするためには、ディスク
の表面粗度Ra(算術平均粗さ)は、5.0Å以下が好
ましく、3.0Å以下である事がより好ましく、2.0
Å以下である事がさらに好ましい。そしてこのような超
平滑な研磨面を得るには、主結晶相の結晶粒子径(平
均)が0.10μm未満であることが好ましく、0.0
5μm以下がより好ましく、0.02μm以下が更に好
ましい。Next, the crystal grain size (average) of the main crystal phase will be described. As described above, as the areal recording density of the information storage medium is improved, the flying height of the head is significantly reduced to 0.025 μm or less, that is, the near-contact recording method or the contact recording method of complete contact is currently underway. To cope with this, the smoothness of the disk surface must be better than that of the conventional product.
Even if an attempt is made to perform high-density input / output to / from a magnetic recording medium with the smoothness of the conventional level, input / output of magnetic signals cannot be performed due to the large distance between the head and the medium. When this distance is reduced, the projection of the medium collides with the head, and the head or the medium is damaged. Therefore, in order to prevent head damage and medium damage even at this extremely low flying height or in contact, the surface roughness Ra (arithmetic mean roughness) of the disk is preferably 5.0 Å or less. It is more preferably 0 Å or less, and 2.0
It is more preferably Å or less. In order to obtain such an ultra-smooth polished surface, the crystal grain size (average) of the main crystal phase is preferably less than 0.10 μm, and 0.0
It is more preferably 5 μm or less, still more preferably 0.02 μm or less.
【0029】更に微細な結晶を均一に析出させることに
より、ガラスセラミックスの機械的強度の向上を図るこ
とができる。特に微細なクラックの成長を析出結晶粒が
防止するため、研磨加工時におけるチッピング等による
微細な欠けを著しく低減できる。また、光フィルターに
用いる場合、その光線透過率が問題となるが、析出結晶
を微細なものとすることにより、光線透過率が向上す
る。このような観点からも、析出結晶粒径(平均)は
0.10μm未満であることが好ましく、より好ましく
は0.05μm以下、更に好ましくは0.02μm以下
である。The mechanical strength of the glass ceramics can be improved by uniformly depositing finer crystals. In particular, since the precipitated crystal grains prevent the growth of fine cracks, fine chipping due to chipping or the like during polishing can be significantly reduced. Further, when used for an optical filter, the light transmittance thereof becomes a problem, but the light transmittance is improved by making the precipitated crystals fine. From this point of view, the precipitated crystal grain size (average) is preferably less than 0.10 μm, more preferably 0.05 μm or less, still more preferably 0.02 μm or less.
【0030】次に機械的強度であるヤング率および曲げ
強度について述べる。磁気記録媒体基板として用いる場
合、これら機械的強度は重要な因子である。これは記録
密度の向上に伴って、ディスク自体が高回転化するた
め、この回転による振動を低減するためには、特にヤン
グ率や曲げ強度が所定の値以上、すなわちヤング率で8
0GPa以上,曲げ強度で250MPa以上であること
が好ましい。また光フィルター用としてみた場合におい
ても、高ヤング率および高曲げ強度であることが望まし
い。これは特WDM用フィルターに用いる場合、微小な
チップ状(2mm以下×2mm以下×2mm以下)に加
工するため、前記各強度が低いと、このような微小加工
が困難となる。したがって、この面からもヤング率は8
0GPa以上、曲げ強度は250MPa以上であること
が好ましい。より好ましくはヤング率が85GPa以
上、曲げ強度は290MPa以上であり、更に好ましく
は曲げ強度が300MPa以上である。Next, Young's modulus and bending strength, which are mechanical strength, will be described. When used as a magnetic recording medium substrate, these mechanical strengths are important factors. This is because, as the recording density is improved, the disc itself is rotated at a higher speed. Therefore, in order to reduce the vibration due to this rotation, the Young's modulus and the bending strength are not less than a predetermined value, that is, the Young's modulus is 8% or more.
The bending strength is preferably 0 GPa or more and 250 MPa or more. Also, when it is used for an optical filter, it is desirable that it has a high Young's modulus and a high bending strength. When this is used for a special WDM filter, it is processed into a minute chip shape (2 mm or less × 2 mm or less × 2 mm or less), and therefore, if the strength is low, such minute processing becomes difficult. Therefore, from this aspect as well, the Young's modulus is 8
It is preferable that the bending strength is 0 GPa or more and the bending strength is 250 MPa or more. More preferably, the Young's modulus is 85 GPa or more, the bending strength is 290 MPa or more, and even more preferably, the bending strength is 300 MPa or more.
【0031】次いで光線透過率についてであるが、光フ
ィルター用としてみた場合、光線透過率が低ければ当然
信号の取り出しに不都合(S/N比の低下)を生じるの
で、その値は大きい方が好ましく、光線透過率は90%
以上である必要がある。特に更にバンドパスフィルター
やGain−Flatteningフィルターの使用波
長は950nm〜1600nmであり、板厚10mm材
におけるこの波長の光線透過率は90%以上であること
が必要となる。尚、前記波長における光線透過率につい
ては、好ましくは95%以上、更に好ましくは97%以
上である。Next, regarding the light transmittance, when viewed as an optical filter, a low light transmittance naturally causes inconvenience in signal extraction (decrease in S / N ratio). Therefore, a larger value is preferable. , Light transmittance is 90%
It must be above. In particular, the wavelength used for the bandpass filter or the Gain-Flattening filter is 950 nm to 1600 nm, and it is necessary that the light transmittance of this wavelength in a material having a plate thickness of 10 mm is 90% or more. The light transmittance at the above wavelength is preferably 95% or more, more preferably 97% or more.
【0032】次いで比重についてであるが、情報記憶装
置において高速回転を可能とするには、前記のヤング率
の他に比重も重要な因子となる。すなわち、比重が大き
いとたとえヤング率が高くても、高速回転時に振動を発
生しやすくなる。その一方で比重を低くし過ぎると、結
果として所望の機械的強度、特にヤング率を得ることが
難しくなる。したがって、これらのバランスを考慮した
場合、ヤング率と比重の比(ヤング率/比重)は30〜
65(GPa)であることが好ましい。特にヤング率と
比重の比(ヤング率/比重)が33〜60(GPa)で
あることがより好ましい。Next, regarding specific gravity, in order to enable high-speed rotation in the information storage device, in addition to the Young's modulus described above, specific gravity is also an important factor. That is, if the specific gravity is large, even if the Young's modulus is high, vibration is likely to occur at high speed rotation. On the other hand, if the specific gravity is too low, it becomes difficult to obtain the desired mechanical strength, especially Young's modulus. Therefore, considering these balances, the ratio of Young's modulus to specific gravity (Young's modulus / specific gravity) is 30 to
It is preferably 65 (GPa). In particular, the ratio of Young's modulus to specific gravity (Young's modulus / specific gravity) is more preferably 33 to 60 (GPa).
【0033】ビッカース硬度については、情報記憶装置
に用いる場合、所定以上の値を有していないと、傷がつ
きやすく磁気記録媒体用基板として用いることができな
い。しかし、あまり高すぎると今度は加工性が著しく低
下する。したがって、これらのバランスを考慮すると6
00〜800であることが好ましい。また、光フィルタ
ー用についても、ビッカース硬度が低いと傷がつきやす
く、透過光がその部分での散乱を生じてしまい、フィル
ターとしての特性を著しく阻害してしまう。またあまり
高すぎると、前述のように加工性の問題を生じ、特に微
小なチップに加工する場合、割れや欠けを生じやすくな
ってしまう。これらのバランスを考慮した場合において
も、600〜800であることが好ましい。尚、より好
ましくは、650〜760の範囲である。Regarding the Vickers hardness, when used in an information storage device, unless it has a predetermined value or more, it is easily scratched and cannot be used as a substrate for a magnetic recording medium. However, if it is too high, the workability will be significantly reduced. Therefore, considering these balances, 6
It is preferably from 00 to 800. Also for optical filters, if the Vickers hardness is low, the scratches are likely to occur, and the transmitted light causes scattering at that portion, which significantly impairs the characteristics as a filter. On the other hand, if it is too high, the problem of workability arises as described above, and cracks and chips are likely to occur especially when processing fine chips. Even considering these balances, it is preferably 600 to 800. The range of 650 to 760 is more preferable.
【0034】次に原ガラスの組成範囲を前記の様に限定
した理由について以下に述べる。SiO2成分は、原ガ
ラスの熱処理により、主結晶相として析出するα−クリ
ストバライト,α−クリストバライト固溶体,α−クォ
ーツ,α−クォーツ固溶体を生成するきわめて重要な成
分であるが、その量が65%未満では、得られたガラス
セラミックスの析出結晶が不安定で組織が粗大化しやす
く、また75%を超えると原ガラスの溶融・成形性が困
難になる。好ましくは65%を越えおよび/または75
%まで、更に好ましくは68%以上,74%以下であ
る。Next, the reason why the composition range of the raw glass is limited as described above will be described below. The SiO 2 component is an extremely important component that produces α-cristobalite, α-cristobalite solid solution, α-quartz, and α-quartz solid solution that precipitate as a main crystalline phase by heat treatment of the raw glass, but the amount thereof is 65%. When the amount is less than the above, the precipitated crystals of the obtained glass ceramics are unstable and the structure is apt to coarsen, and when it exceeds 75%, the melting / formability of the raw glass becomes difficult. Preferably above 65% and / or 75
%, More preferably 68% or more and 74% or less.
【0035】Li2O成分は、現ガラスの溶融性を向上
させる重要な成分であるが、その量が4%未満では、上
記効果が得られず原ガラスの溶融が困難となり、また、
7%以上になるとLiイオン溶出の問題を生じたり、二
珪酸リチウム結晶の生成が増加する。好ましくは4.5
%以上,6.5%以下、更に好ましくは4.5%以上,
6.0%以下である。The Li 2 O component is an important component for improving the melting property of the current glass. However, if the amount is less than 4%, the above effect cannot be obtained and it becomes difficult to melt the raw glass.
If it is 7% or more, the problem of Li ion elution occurs or the production of lithium disilicate crystals increases. Preferably 4.5
% Or more and 6.5% or less, more preferably 4.5% or more,
It is 6.0% or less.
【0036】K2O、Na2O成分は、溶融温度を低下さ
せる効果を有し、更にLi2O成分と混合することでガ
ラスマトリックス中からのアルカリイオン溶出を抑制す
る効果を有する成分である。これはこれらアルカリ成分
を少量混合共存させることによって、電気的性質(体積
抵抗率)を改善することによるものであり、相対的にL
i2O成分の割合が多いガラスにK2O,Na2O成分を
混合共存させると、体積抵抗率を向上させ、ガラス中の
アルカリイオンの移動度を抑制し、最終的にはアルカリ
イオン溶出を抑制する効果が得られるというものであ
る。尚これら成分の含有量については、K2O成分は3
%以内、Na2O成分は3%以内で十分であり、これ以
上含有するとかえってアルカリ溶出量を増加させる傾向
へとなってしまう。より好ましい範囲はK2O,Na2O
ともそれぞれ0〜3%未満であり、より好ましい範囲は
Na2O=0〜2.5%,K2O=0.1〜2.5%であ
る。The K 2 O and Na 2 O components are components having the effect of lowering the melting temperature, and further having the effect of suppressing the elution of alkali ions from the glass matrix when mixed with the Li 2 O component. . This is because by mixing and coexisting a small amount of these alkali components, the electrical properties (volume resistivity) are improved, and the relative L
Mixing and coexisting K 2 O and Na 2 O components in a glass having a large proportion of i 2 O components improves the volume resistivity, suppresses the mobility of alkali ions in the glass, and finally elutes the alkali ions. The effect of suppressing is obtained. Regarding the content of these components, K 2 O component is 3
%, The Na 2 O component is 3% or less, and if it is contained more than this, the alkali elution amount tends to increase. A more preferable range is K 2 O and Na 2 O.
Both are 0 to less than 3%, and more preferable ranges are Na 2 O = 0 to 2.5% and K 2 O = 0.1 to 2.5%.
【0037】MgO、ZnO、SrO、BaO、CaO
成分は、ガラスの溶融性を向上させると同時に析出結晶
の粗大化を防止する成分であるが、各成分の合計量は2
%以上であることが好ましく15%を超えると、得られ
る結晶が不安定で組織が粗大化しやすくなる。MgO, ZnO, SrO, BaO, CaO
The components are components that improve the meltability of the glass and at the same time prevent coarsening of the precipitated crystals, but the total amount of each component is 2
% Or more, and if it exceeds 15%, the obtained crystals are unstable and the structure tends to become coarse.
【0038】P2O5成分は本発明において、ガラスの結
晶核形成剤として不可欠であるが、結晶核形成を促進し
て析出結晶相の粗大化を防ぐためには、その量は1.0
%以上が好ましく、また原ガラスの乳白失透を防ぎ、量
産安定性を保つためには2.5%以下が好ましい。In the present invention, the P 2 O 5 component is indispensable as a crystal nucleating agent for glass, but its amount is 1.0 in order to promote crystal nucleation and prevent coarsening of the precipitated crystal phase.
% Or more, and preferably 2.5% or less in order to prevent devitrification of the raw glass and to maintain mass production stability.
【0039】ZrO2成分はP2O5成分と同様にガラス
の結晶核形成剤として機能する上に、析出結晶の均一化
と微細化、材料の機械的強度向上および化学的耐久性の
向上に顕著な効果を有することが見出された極めて重要
な成分である。その量は2.0%以上が好ましい。しか
し、過剰に加えると原ガラスの溶融が困難となると同時
にZrSiO4等の溶け残りが発生し易くなるために、
ZrO2成分量は7%以下が好ましい。より好ましくは
2%以上、6%以下であり、更に好ましくは上限が5%
以下である。Like the P 2 O 5 component, the ZrO 2 component functions as a crystal nucleating agent for glass, and also serves to make the precipitated crystals uniform and fine, improve the mechanical strength of the material and improve the chemical durability. It is a very important ingredient found to have a significant effect. The amount is preferably 2.0% or more. However, if added excessively, it becomes difficult to melt the raw glass, and at the same time, unmelted residue such as ZrSiO 4 easily occurs,
The amount of ZrO 2 component is preferably 7% or less. It is more preferably 2% or more and 6% or less, and further preferably the upper limit is 5%.
It is the following.
【0040】SnO2成分はZrO2成分と同様にガラス
の結晶核形成剤として機能する成分であるが、その量は
3%以内で充分である。Like the ZrO 2 component, the SnO 2 component is a component that functions as a crystal nucleating agent for glass, but its amount is preferably 3% or less.
【0041】Al2O3成分は、ガラスセラミックスの化
学的耐久性および機械的強度、特に硬度を向上させる成
分であり、その量は5%以上であることが好ましいが、
過剰に含有すると、溶融性,耐失透性が悪化し、更に析
出結晶相が低膨張結晶のβ−スポジューメン(Li2O
・Al2O3・4SiO2)となってしてしまう。β−ス
ポジューメン(Li2O・Al2O3・4SiO2)の析出
は材料の平均線膨張係数を著しく低下させるため、この
結晶の析出は避ける必要がある。したがって、Al2O3
成分は9%以下であることが好ましい。より好ましく
は、下限が5%を越え、上限が9%未満であり、更に好
ましくは下限が6%以上、上限が8%未満である。The Al 2 O 3 component is a component that improves the chemical durability and mechanical strength of the glass ceramics, especially the hardness, and the amount thereof is preferably 5% or more.
If it is contained excessively, the meltability and devitrification resistance are deteriorated, and the precipitated crystal phase is low expansion crystal β-spodumene (Li 2 O).
· Al 2 O 3 · 4SiO 2 ) and made to result in. The precipitation of β-spodumene (Li 2 O.Al 2 O 3 .4SiO 2 ) significantly lowers the average linear expansion coefficient of the material, and therefore the precipitation of this crystal must be avoided. Therefore, Al 2 O 3
The component is preferably 9% or less. More preferably, the lower limit is more than 5% and the upper limit is less than 9%, and even more preferably the lower limit is 6% or more and the upper limit is less than 8%.
【0042】Y2O3、WO3、La2O3、Bi2O3の各
成分は、Li2O成分低含有組成において、低下した溶
融性を改善すると共に、ガラスの高ヤング率化をもたら
す成分であるが、その合計量は3%以下で充分であり、
3%を超えると安定した結晶の析出が困難となる。Each of the Y 2 O 3 , WO 3 , La 2 O 3 and Bi 2 O 3 components improves the meltability which has been lowered in the composition containing a small amount of Li 2 O component, and increases the Young's modulus of the glass. It is a component to bring, but the total amount of 3% or less is sufficient,
If it exceeds 3%, stable precipitation of crystals becomes difficult.
【0043】Sb2O3およびAs2O3成分はガラス溶融
の際の清澄剤として添加しうるが、それらの成分の和は
1%以下で充分である。The Sb 2 O 3 and As 2 O 3 components can be added as a fining agent during glass melting, but the sum of these components is 1% or less.
【0044】また、前記の諸特性を損なわぬ範囲で3%
(いずれも酸化物基準の質量%)までのGa,Ge,C
u,Fe,Co,Nb,Ti,V,Ce,Gd,B成分
を含有させることができる。また、Mo,Ta,Mn,
Cr,F成分はできれば実質的に含まないことが好まし
い。Further, within the range where the above various characteristics are not impaired, 3%
Ga, Ge, C up to (both in% by mass based on oxide)
u, Fe, Co, Nb, Ti, V, Ce, Gd and B components can be contained. In addition, Mo, Ta, Mn,
It is preferable that the Cr and F components are not substantially contained if possible.
【0045】次に、本発明にかかるガラスセラミックス
を製造するには、まず上記の組成を有するガラスを溶解
し、熱間成形および/または冷間加工を行った後、40
0〜600℃の範囲の温度で約1〜7時間熱処理して結
晶核を形成し、続いて650〜750℃の範囲の温度で
約1〜7時間熱処理して結晶化を行う。Next, in order to produce the glass-ceramic according to the present invention, first, the glass having the above composition is melted, hot-formed and / or cold-worked, and then 40
Crystallization is performed by heat treatment at a temperature in the range of 0 to 600 ° C. for about 1 to 7 hours to form crystal nuclei, and then heat treatment at a temperature in the range of 650 to 750 ° C. for about 1 to 7 hours.
【0046】こうして熱処理により結晶化されたガラス
セラミックスの主結晶相は、α−クリストバライト,α
−クリストバライト固溶体,α−クォーツ,α−クォー
ツ固溶体の中から選ばれる少なくとも1種以上であり、
その粒子径(平均)は、いずれも0.10μm未満の範
囲であった。The main crystal phase of the glass ceramic crystallized by the heat treatment is α-cristobalite, α
-At least one selected from cristobalite solid solution, α-quartz, and α-quartz solid solution,
The particle size (average) was in the range of less than 0.10 μm.
【0047】次にこの熱処理結晶化したガラスセラミッ
クスを常法によりラッピングした後ポリシングすること
により、表面粗度Ra(算術平均粗さ)が1.0Å以
上、5.0Å以下の範囲内のガラスセラミックス基板材
料が得られた。そして、このガラスセラミックス基板材
料上に磁性膜および必要に応じてNi−Pメッキ、また
は下地層、保護層、潤滑膜等を形成して、高密度記録に
対応しうる情報磁気記憶媒体ディスクが得られた。ま
た、研磨後のガラスセラミックス基板材料にTa2O5/
SiO2多層膜を成膜し、1mm×1mm×1mmのチ
ップに加工したものは、温度変化による中心波長の変動
が従来のものよりも小さい、波長分解の良好な光フィル
ターが得られた。そしてこのフィルターはバンドパスフ
ィルターあるいはGain−Flatteningフィ
ルターに好適であった。Next, the heat-treated crystallized glass ceramics are lapped by a conventional method and then polished to obtain a glass ceramics having a surface roughness Ra (arithmetic mean roughness) of 1.0 Å or more and 5.0 Å or less. A substrate material was obtained. Then, a magnetic film and, if necessary, Ni—P plating, or an underlayer, a protective layer, a lubricating film, etc., are formed on the glass ceramic substrate material to obtain an information magnetic storage medium disk capable of high density recording. Was given. In addition, Ta 2 O 5 /
In the case where the SiO 2 multilayer film was formed and processed into a chip of 1 mm × 1 mm × 1 mm, an optical filter with good wavelength resolution, in which the fluctuation of the central wavelength due to the temperature change was smaller than that of the conventional one, was obtained. This filter was suitable as a bandpass filter or a Gain-Flattening filter.
【0048】[0048]
【発明の実施の形態】次に本発明の好適な実施例につい
て説明する。表1〜4は本発明のガラスセラミックスの
実施組成例(No.1〜10)および比較組成例として
従来のLi2O−SiO2系ガラスセラミックス2種(比
較例1:特開昭62−72547号公報記載のもの、比
較例2:特開平9−35234号公報記載のもの)を、
これらガラスセラミックスの核形成温度,結晶化温度,
結晶相,結晶粒子径(平均),平均線膨張係数(温度範
囲は−50〜+70℃),比重,研磨して成る表面粗度
Ra(算術平均粗さ)の値を共に示す。尚、表中の結晶
相についてはα−クリストバライト固溶体を「α−クリ
ストバライトSS」、α−クォーツ固溶体を「α−クォー
ツSS」と表記した。BEST MODE FOR CARRYING OUT THE INVENTION Next, preferred embodiments of the present invention will be described. Tables 1 to 4 show practical composition examples (No. 1 to 10) of the glass ceramics of the present invention and two conventional Li 2 O—SiO 2 based glass ceramics as comparative composition examples (Comparative Example 1: JP-A-62-72547). JP-A-9-35234, Comparative Example 2: JP-A-9-35234).
Nucleation temperature, crystallization temperature of these glass ceramics,
The values of the crystal phase, the crystal grain size (average), the average linear expansion coefficient (the temperature range is −50 to + 70 ° C.), the specific gravity, and the surface roughness Ra (arithmetic mean roughness) formed by polishing are also shown. Regarding the crystal phases in the table, the α-cristobalite solid solution was described as “α-cristobalite SS” and the α-quartz solid solution was described as “α-quartz SS”.
【0049】本発明の実施例のガラスは、いずれも酸化
物、炭酸塩、硝酸塩等の原料を混合し、これを通常の溶
解装置を用いて約1350〜1450℃の温度で溶解し
攪拌均質化した後、ディスク状に成形・冷却しガラス成
形体を得た。その後これを400〜600℃で約1〜7
時間熱処理して結晶核形成後、650〜750℃で約1
〜7時間熱処理結晶化して、所望のガラスセラミックス
を得た。ついで上記ガラスセラミックスを800#〜2
000#のダイヤモンドペレットにて約5〜30分ラッ
ピングし、その後粒子径(平均)0.02〜3.0μm
の研磨剤(酸化セリューム)にて約30〜60分間研磨
し仕上げた。In each of the glasses of the examples of the present invention, raw materials such as oxides, carbonates and nitrates are mixed, and this is melted at a temperature of about 1350 to 1450 ° C. with a normal melting apparatus and homogenized with stirring. After that, it was molded into a disk shape and cooled to obtain a glass molded body. After that, at 400-600 ° C for about 1-7
After heat treatment for a long time to form crystal nuclei, the temperature is about 1 at 650 to 750 ° C.
Heat treatment and crystallization were performed for about 7 hours to obtain a desired glass ceramic. Next, the above glass ceramics are added to 800 # -2
Lapping with 000 # diamond pellets for about 5 to 30 minutes, then particle size (average) 0.02 to 3.0 μm
The polishing agent (cerium oxide) was used for polishing for about 30 to 60 minutes to finish.
【0050】各結晶相の結晶粒子径(平均)については
透過型電子顕微鏡(TEM)により求めた。各結晶相の
結晶種はX線回折(XRD)装置により同定した。The crystal grain size (average) of each crystal phase was determined by a transmission electron microscope (TEM). The crystal species of each crystal phase was identified by an X-ray diffraction (XRD) device.
【0051】さらに表面粗度Ra(算術平均粗さ)につ
いては、原子間力顕微鏡(AFM)により求めた。Further, the surface roughness Ra (arithmetic mean roughness) was determined by an atomic force microscope (AFM).
【0052】Liイオン溶出量の測定はイオンクロマト
グラフィーにより行った。測定の測定条件は、フィルム
パックに超純水80ミリリットル(室温)とディスク
(直径65mm×厚さ0.635mm)をパックし、そ
の後約30℃に保温された乾燥機内に3時間保持した
後、ディスクを取り出しイオンクロマト測定を行った。The amount of Li ion eluted was measured by ion chromatography. The measurement conditions of the measurement are as follows: 80 ml of ultrapure water (room temperature) and a disk (diameter 65 mm × thickness 0.635 mm) are packed in a film pack, and then the product is kept in a dryer kept at about 30 ° C. for 3 hours, The disk was taken out and ion chromatography measurement was performed.
【0053】平均線膨張係数の測定はJOGIS(日本
光学硝子工業会規格)16により、ヤング率の測定はJ
IS R1602の超音波パルス法 により、曲げ強度
の測定はJIS R1601(3点曲げ強さ)により、
ビッカース硬度の測定についてはJIS R1610に
より、光線波長950〜1600nmにおける板厚10
mm材の光線透過率については分光光度計により、比重
についてはJOGIS(日本光学硝子工業会規格)05
より、測定した。The average linear expansion coefficient is measured by JOGIS (Japan Optical Glass Industry Association Standard) 16, and the Young's modulus is measured by JOGIS.
Bending strength is measured according to JIS R1601 (3-point bending strength) by the ultrasonic pulse method of IS R1602.
Regarding the measurement of Vickers hardness, according to JIS R1610, plate thickness 10 at a light ray wavelength of 950 to 1600 nm
The light transmittance of mm material is measured by a spectrophotometer, and the specific gravity is measured by JOGIS (Japan Optical Glass Industry Association Standard) 05.
Was measured.
【0054】[0054]
【表1】 [Table 1]
【0055】[0055]
【表2】 [Table 2]
【0056】[0056]
【表3】 [Table 3]
【0057】[0057]
【表4】 [Table 4]
【0058】表1〜3に示されるとおり、本発明と従来
のLi2O−SiO2系ガラスセラミックスの比較例とで
は、結晶相が異なり、本発明のガラスセラミックスは、
二珪酸リチウム(Li2Si2O5)の析出がなく、いず
れもα−クリストバライ,α−クリストバライト固溶
体,α−クォーツ,α−クォーツ固溶体の中から選ばれ
る少なくとも1種以上であった。さらに比較例1のガラ
スセラミックスは二珪酸リチウムの結晶粒子径(平均)
が1.5μm、比較例2のガラスセラミックスはβ−ス
ポジューメンの結晶粒子径(平均)が0.2μmと、い
ずれも比較的大きな針状ないし米粒形状であるが、これ
はより平滑性を求められる状況において、研磨して成る
表面粗度や欠陥に影響するものであり、比較例1、2の
ガラスセラミックスはいずれも表面粗度Ra(算術平均
粗さ)が11Å以上と、平滑性が著しくの優れた表面特
性(Raで5Å以下)を得ることが困難であることを示
すものである。また、平均線膨張係数(×10-7/℃)
は、48,49と低膨張となっており、磁気情報記憶媒
体用基板材として、また光フィルター用材料として不適
合である。As shown in Tables 1 to 3, the crystal phases of the present invention and the comparative example of the conventional Li 2 O--SiO 2 glass ceramics are different, and the glass ceramics of the present invention are
There was no precipitation of lithium disilicate (Li 2 Si 2 O 5 ), and all were at least one selected from α-cristobaray, α-cristobalite solid solution, α-quartz, and α-quartz solid solution. Further, the glass ceramic of Comparative Example 1 has a crystal particle size (average) of lithium disilicate.
Is 1.5 μm, and the glass-ceramics of Comparative Example 2 have a relatively large needle-shaped or rice-grained shape with a β-spodumene crystal particle size (average) of 0.2 μm, which requires smoothness. Under the circumstances, the surface roughness Ra and the defects formed by polishing are affected, and the glass ceramics of Comparative Examples 1 and 2 all have a surface roughness Ra (arithmetic mean roughness) of 11 Å or more, which is extremely smooth. This shows that it is difficult to obtain excellent surface characteristics (Ra is 5 Å or less). Also, the average linear expansion coefficient (× 10 -7 / ° C)
Has a low expansion of 48 and 49 and is unsuitable as a substrate material for a magnetic information storage medium and as a material for an optical filter.
【0059】また上記の実施例により得られたガラスセ
ラミックスに、DCスパッタ法により、Cr中間層(8
0nm)、Co−Cr磁性層(50nm)、SiC保護
膜(10nm)を成膜した。次いでパーフルオロポリエ
ーテル系潤滑剤(5nm)を塗布して、情報記憶媒体を
得た。これによって得られた情報記憶媒体は、その良好
な表面粗度により、従来よりもヘッド浮上高さを低減す
ることができ、またランプローディング方式によって、
ヘッドと媒体が接触状態での入出力を行っても、ヘッド
破損・媒体破損を生じることなく磁気信号の入出力を行
うことができた。さらに本発明のガラスセラミックス
は、ランディングゾーン方式にて行われるレーザーテク
スチャーにおいても安定したバンプ形状を示すものであ
る。Further, on the glass ceramics obtained in the above embodiment, a Cr intermediate layer (8
0 nm), a Co—Cr magnetic layer (50 nm), and a SiC protective film (10 nm). Then, a perfluoropolyether lubricant (5 nm) was applied to obtain an information storage medium. The information storage medium obtained in this way can reduce the head flying height more than before due to its good surface roughness, and by the lamp loading method,
Even when inputting / outputting with the head and the medium in contact, magnetic signals could be input / output without damaging the head or the medium. Further, the glass ceramics of the present invention exhibit a stable bump shape even in the laser texture performed by the landing zone method.
【0060】また上記の実施例により得られたガラスセ
ラミックス基板に、スパッタ法により、誘電体多層膜
(例えばTiO2/SiO2,Ta2O5/SiO2,Nb2
O5/SiO2等)を成膜し、光フィルターを得た。これ
によって得られた光フィルターは透過光の中心波長の温
度による変化が著しく低減でき、その波長の分解能も良
好なものであった。Further, a dielectric multilayer film (for example, TiO 2 / SiO 2 , Ta 2 O 5 / SiO 2 , Nb 2) is formed on the glass ceramic substrate obtained in the above embodiment by a sputtering method.
O 5 / SiO 2 etc.) was deposited to obtain an optical filter. The optical filter thus obtained was able to remarkably reduce the change of the central wavelength of the transmitted light with temperature and had a good resolution of the wavelength.
【0061】[0061]
【発明の効果】以上述べたように、本発明によれば、上
記従来技術に見られる諸欠点を解消しつつ、高記録密度
化に対応したヘッドの低浮上化または接触を可能とする
原子レベルの超平滑性を有し、且つガラス中のアルカリ
成分を極力低減させるのと同時にアルカリ溶出・研磨加
工時の表面欠陥(ピット)を起こしやすいニ珪酸リチウ
ム(Li2O・2SiO2)結晶の析出を抑制した情報記
憶媒体用ガラスセラミックスならびに超平滑で加工時に
欠けやチッピングを生じにくく、波長選択用多層膜との
密着性も良好であり、更にこの多層膜に十分な圧縮応力
を与えることができる光フィルター用ガラスセラミック
スを提供することができる。As described above, according to the present invention, it is possible to eliminate the drawbacks found in the above-mentioned prior art and at the same time, to reduce the flying height of the head or to make contact with the head, which is compatible with higher recording density. Lithium disilicate (Li 2 O ・ 2SiO 2 ) crystals, which have ultra-smoothness and are capable of reducing alkali components in glass as much as possible, and at the same time are susceptible to surface defects (pits) during alkali elution and polishing Glass ceramics for information storage media that suppresses the above-mentioned phenomenon, and is ultra-smooth so that chipping or chipping is unlikely to occur during processing, good adhesion with the wavelength selection multilayer film, and sufficient compressive stress can be applied to this multilayer film. A glass ceramic for an optical filter can be provided.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 米国特許4239521(US,A) (58)調査した分野(Int.Cl.7,DB名) C03C 1/00 - 14/00 G11B 5/62 - 5/82 WPI─────────────────────────────────────────────────── ─── Continuation of the front page (56) References US Patent 4239521 (US, A) (58) Fields investigated (Int.Cl. 7 , DB name) C03C 1/00-14/00 G11B 5/62-5 / 82 WPI
Claims (8)
クリストバライト固溶体,α−クォーツ,α−クォーツ
固溶体の中から選ばれる少なくとも1種以上を含有しつ
つも、二珪酸リチウム(Li2O・2SiO2),珪酸リ
チウム(Li2O・SiO2),β−スポジューメン,β
−ユークリプタイト,β−石英,マイカおよびフルオロ
リヒテライト(fluorrichterite)を実質的に含有せ
ず、更にCr成分およびMn成分を実質的に含まず、−
50〜+70℃における平均線膨張係数が+65×10
-7 /℃〜+140×10-7/℃の範囲であり、主結晶相
の結晶粒子径(平均)が0.10μm未満であること特
徴とするガラスセラミックス。1. The main crystalline phase is α-cristobalite, α-
Lithium disilicate (Li 2 O · 2SiO 2 ), lithium silicate (Li 2 O · SiO 2 ), β while containing at least one selected from cristobalite solid solution, α-quartz, and α-quartz solid solution. -Spodium, β
-Eucryptite, β-quartz, mica and fluorrichterite are substantially absent, and Cr component and Mn component are substantially absent,-
Average linear expansion coefficient at 50 to + 70 ° C. is + 65 × 10
-7 / ° C. ~ in the range of + 140 × 10 -7 / ℃, glass ceramic, wherein the crystal grain size of the main crystal phase (average) is less than 0.10 .mu.m.
特徴とする、請求項1に記載のガラスセラミックス。2. The glass-ceramic according to claim 1, which has a Young's modulus of 80 GPa or more.
とする、請求項1または2に記載のガラスセラミック
ス。3. The glass ceramics according to claim 1, which has a specific gravity of 2.3 to 2.7.
0〜1600nmにおいて90%以上であることを特徴
とする、請求項1,2,3のいずれかに記載のガラスセ
ラミックス。4. The light transmittance of a material having a plate thickness of 10 mm has a wavelength of 95.
90% or more in 0 to 1600 nm, Glass ceramics in any one of Claims 1, 2 and 3 characterized by the above-mentioned.
を特徴とする、請求項1,2,3,4のいずれかに記載
のガラスセラミックス。5. The glass-ceramic according to any one of claims 1, 2, 3 and 4, which has a bending strength of 250 MPa or more.
ことを特徴とする、請求項1,2,3,4,5のいずれ
かに記載のガラスセラミックス。6. The glass-ceramic according to any one of claims 1, 2, 3, 4, and 5, which has a Vickers hardness of 600 to 800.
(酸化物基準)で、 SiO2 65 〜75% Li2O 4 〜 7未満% K2O 0 〜 3% Na2O 0 〜 3% MgO+ZnO+SrO+BaO+CaO 2 〜 15% Y2O3+WO3+La2O3+Bi2O3 0 〜 3% SnO2 0 〜 3% P2O5 1.0〜 2.5% ZrO2 2.0〜 7% Al2O3 5 〜 9% Sb2O3+As2O3 0 〜 1% の範囲の各成分を含有することを特徴とする、請求項
1,2,3,4,5,6のいずれかに記載のガラスセラ
ミックス。7. The composition of the glass ceramics is a mass percentage (based on oxide) of SiO 2 65 to 75% Li 2 O 4 to less than 7% K 2 O 0 to 3% Na 2 O 0 to 3% MgO + ZnO + SrO + BaO + CaO 2 15% Y 2 O 3 + WO 3 + La 2 O 3 + Bi 2 O 3 0 to 3% SnO 2 0 to 3% P 2 O 5 1.0 to 2.5% ZrO 2 2.0 to 7% Al 2 O 3 The glass according to any one of claims 1, 2, 3, 4, 5 and 6, characterized in that it contains each component in the range of 5 to 9% Sb 2 O 3 + As 2 O 3 0 to 1%. Ceramics.
時間熱処理して核形成した後、650℃〜750℃で1
〜7時間熱処理して結晶成長させて得られることを特徴
とする、請求項1,2,3,4,5,6,7のいずれか
に記載のガラスセラミックス。8. The raw glass is 1 to 7 at 400 ° C. to 600 ° C.
After heat treatment for nucleation for 1 hour, 1 at 650 ° C to 750 ° C
The glass-ceramic according to any one of claims 1, 2, 3, 4, 5, 6 and 7, characterized in that it is obtained by heat treatment for 7 hours to grow crystals.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000265122A JP3420192B2 (en) | 2000-02-01 | 2000-09-01 | Glass ceramics |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000023871 | 2000-02-01 | ||
| JP2000-23871 | 2000-02-01 | ||
| JP2000-152961 | 2000-05-24 | ||
| JP2000152961 | 2000-05-24 | ||
| JP2000-220188 | 2000-07-21 | ||
| JP2000220188 | 2000-07-21 | ||
| JP2000265122A JP3420192B2 (en) | 2000-02-01 | 2000-09-01 | Glass ceramics |
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| Publication Number | Publication Date |
|---|---|
| JP2002097037A JP2002097037A (en) | 2002-04-02 |
| JP3420192B2 true JP3420192B2 (en) | 2003-06-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8283060B2 (en) | 2009-06-04 | 2012-10-09 | Ohara Inc. | Crystallized glass substrate for information recording medium and method of producing the same |
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| JP4559523B2 (en) * | 2009-02-24 | 2010-10-06 | 株式会社オハラ | Glass substrate for information recording medium and manufacturing method thereof |
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| CN113544103A (en) * | 2019-03-06 | 2021-10-22 | 株式会社小原 | Inorganic composition products and crystallized glass |
| EP3950622A4 (en) * | 2019-04-01 | 2023-06-07 | Nippon Electric Glass Co., Ltd. | Li2o-al2o3-sio2-based crystallized glass |
| KR20230061384A (en) * | 2020-09-04 | 2023-05-08 | 가부시키가이샤 오하라 | Inorganic Composition Articles |
| WO2023206002A1 (en) * | 2022-04-25 | 2023-11-02 | 清远南玻节能新材料有限公司 | Glass ceramic, tempered glass, and preparation method therefor and use thereof |
| CN117702016B (en) * | 2023-12-18 | 2025-12-26 | 昆明理工大学 | A method for preparing a high-strength and high-toughness aluminum-magnesium-silicon alloy |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4239521A (en) | 1975-03-19 | 1980-12-16 | Corning Glass Works | Spontaneously-formed alpha-quartz glass-ceramics |
-
2000
- 2000-09-01 JP JP2000265122A patent/JP3420192B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4239521A (en) | 1975-03-19 | 1980-12-16 | Corning Glass Works | Spontaneously-formed alpha-quartz glass-ceramics |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8283060B2 (en) | 2009-06-04 | 2012-10-09 | Ohara Inc. | Crystallized glass substrate for information recording medium and method of producing the same |
| US8852764B2 (en) | 2009-06-04 | 2014-10-07 | Ohara Inc. | Crystallized glass substrate for information recording medium and method of producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002097037A (en) | 2002-04-02 |
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