JP3422326B2 - Method for measuring electrical resistivity of semiconductor materials - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring the electrical resistivity of a semiconductor material, which is preferably used for selecting a semiconductor scrap material used as a raw material for a solar cell material.

[0002]

2. Description of the Related Art In order to manufacture solar cells, high purity and low cost materials are required. As a high-purity material, there is a semiconductor single crystal used for manufacturing a semiconductor device, but it is very expensive to use. For this reason, scrap materials generated in the manufacturing process of semiconductor single crystals have been conventionally used as materials for high-performance solar cells.

A semiconductor single crystal scrap material is a lump whose shape and weight are not constant and has an electric resistivity of 1 as well.
It is customary that the value is not constant at about 20 Ωcm. That is,
Semiconductor single crystals used for devices have various electrical resistivities depending on the application.

On the other hand, the electric resistivity of the solar cell substrate is 1 to 5
It must be within the range of Ωcm. Therefore, in the manufacturer of solar cell substrates, the electrical resistivity of the purchased scrap material is measured, the scrap material is selected according to the electrical resistivity, and the addition amount of the doping agent in the melting process is adjusted,
An operation is performed to keep the electrical resistivity within the allowable range.

In addition to the usual materials, the single crystal scrap materials have extremely low resistivity (<0.
Some of them are about 01 Ωcm) and there is a gap of two digits from the normal material (about 1 Ωcm). In addition, the impurity concentrations are separated by nearly three digits.

Normal materials (> 1) can be used for solar cells.
Ωcm), and if a low-resistivity material is mixed in even in a small amount, it causes a remarkable decrease in electrical resistivity and cannot be used as a solar cell substrate. Therefore, it is necessary to remove scrap materials having low resistivity as much as possible. However, if the semiconductor manufacturer controls the electrical resistivity of the scrap material, the cost for the management will increase and the price of the scrap material will increase.

The four-probe method is generally used as a method for measuring the electrical resistivity of a semiconductor. This method is 4
When one probe is brought into contact with the surface of the material and an electric current is passed between the two probes, the electrical resistance is calculated from the current and the electromotive force generated between the other two probes, and this is used as the probe. The electrical resistivity is calculated by multiplying by the shape factor determined by the interval of. In this case, the probes are generally arranged at equal intervals. Since this method requires a flat surface, it is used exclusively for measuring the electrical resistivity of semiconductor wafers.

If the electric resistance of a lump of semiconductor scrap material having a non-uniform shape is controlled by this four-probe method, it takes labor and time to make a flat surface, which causes a price increase.

On the other hand, as a non-contact electric resistivity measuring method, a part of a semiconductor wafer is inserted into an air gap of a high-frequency magnetic circuit, and a change in magnetic flux density due to an eddy current generated in the part is used to measure the electric resistance of the wafer. A method for measuring the resistivity is presented in Japanese Laid-Open Patent Publication No. 1-92666.
In addition, an AC electromotive force method in which an inversion layer is formed on the surface of a wafer and a photovoltaic wave when the surface is irradiated with a modulation wave is detected from reflection of the irradiation wave is disclosed in US Pat. No. 5,661,40.
No. 8 is presented.

The inventors of the present invention first disclosed Japanese Patent Application No. 11-31.
The non-contact method filed in No. 2227 irradiates a magnetic field line of high frequency from a high-frequency transmitter to a receiver arranged opposite to the high-frequency transmitter, passes semiconductor scrap material between them, and at the time of passing the semiconductor scrap material, The semiconductor scrap material is cut out from the hopper and conveyed by a belt conveyor by a method of measuring the amplitude of the output voltage and calculating the electrical resistivity of the semiconductor scrap material from the measured voltage and weight.
During this transportation process, the weight of the semiconductor scrap material and the detection voltage of the resistivity measuring device are measured.

[0011]

However, in the 4-probe method, which is a contact method, accurate electrical resistivity cannot be measured unless grinding is performed to obtain a flat surface for each lump, and
If you measure without obtaining a flat surface, the measurement accuracy will be extremely poor. As described above, the 4-probe method is extremely inefficient and inaccurate with respect to an aggregate of many lumps.

The non-contact method disclosed in Japanese Patent Laid-Open No. 1-92666 can be measured only on a flat plate having a uniform thickness such as a wafer. On the other hand, US Pat.
Since the non-contact method described in Japanese Patent No. 661,408 is difficult to measure unless the surface is flat, neither method can be applied to the measurement of electric resistivity of an amorphous semiconductor such as scrap material. The non-contact method described in Japanese Patent Application No. 11-31227 has to be measured for voltage and weight for each lump to calculate the electrical resistivity, which is a disadvantage for many aggregates. There is.

An object of the present invention is to provide a method for measuring the electrical resistivity of a semiconductor material, which can efficiently measure the electrical resistivity of an aggregate of semiconductor scrap materials with high accuracy.

[0014]

In order to achieve the above object, the inventors of the present invention, in order to efficiently measure the electric resistivity of a semiconductor scrap material by the non-contact method previously applied, It was considered desirable to omit the measurement of weight. The output of the non-contact method is basically inversely proportional to the resistivity ρ, but the shape of the object has a large influence. Therefore, as a result of various investigations on the influence of the shape, the following facts were found.

First, a lump of semiconductor scrap material having a uniform electric resistivity was crushed into particles and filled in a fixed container.
Even if the particle size was changed variously, the ones were put in a container and the porosity was kept substantially constant, and the weight was the same. When the output voltage was measured in this state, the output voltage V changed depending on the particle size.

Therefore, the relationship between the output voltage V and the maximum particle size d _max was investigated. Electrical resistivity and particle size (2.3 to 16.3m
A constant weight (20 g) of semiconductor particles having a known m) was taken for non-contact measurement. As a result, the amplitude V of the output voltage was proportional to the square of the maximum particle size d _max (FIG. 5). In particular,
V = α · d _max ² / ρ. Here, α is a constant determined by the shape of the container and ρ is the resistivity. That is, as the maximum particle size decreased, the output voltage also decreased.
The reason for this was considered as follows.

In this case, the current between particles is so small that it can be ignored, and the total energy loss is the sum of the energy losses due to each particle. A large part of the energy loss of magnetic field lines due to semiconductors is the eddy current flowing in the circular path of the maximum radius that can be drawn in the grain, and the amount of loss is 2 of the maximum radius.
Proportional to the square. Therefore, the amplitude V of the output voltage is proportional to not only the reciprocal ρ ^{−1 of the} resistivity and the weight w but also the square of the particle diameter d.

That is, for one particle, v = α ^*
-D ² · w / ρ (α ^* is a constant). In the case of an aggregate of a large number of particles, these may be summed up, and the influence of large particles is remarkable, so it is appropriate to take the maximum particle diameter d _max as a representative value of d. Therefore, the amplitude of the output voltage in this case is V = α ^** · d _max ² · W / ρ.

The maximum particle size of the semiconductor particles is set to a predetermined value d _max.
Can be achieved by, but not limited to, sieving with a net having an opening of d _max and using fine particles under the sieving. The coarse particles on the sieve may be crushed again before use.

The semiconductor fine particles (less than about 0.5 mm) in the uncleaned scrap material may contain a relatively large amount of impurities and adversely affect the characteristics of the solar cell, which is not desirable.
By sieving, it is possible to remove fine particles having such an adverse effect.

The weight and maximum grain size of the semiconductor material are set to a predetermined value d.
_{It was set to max} and filled in a predetermined container (Fig. 1). At this time, since d _max and W are constant, ρ =
There is a relationship of a · V ^{− 1} (FIG. 6). The coefficient a is a factor determined by the shape of the container and other measurement conditions, and is obtained in advance by measuring a standard sample. The above-mentioned container may be a box of a fixed shape, or a cup or bag having an opening. However, the electric conductor container cannot be used because it blocks the magnetic field.

The same effect can be obtained by feeding a predetermined amount of semiconductor particles to a belt conveyor that moves at a predetermined speed without filling the container with a predetermined container.

The value of α varies depending on the distance from the object to be measured to the transmitter 2 or the receivers 3 and 3. That is, if the object to be measured is too close to the transmission coil 2, the magnetic field line interval is small and the signal increases. Further, if it is too close to the receiving coils 3 and 3, the sensitivity increases rapidly and the signal abnormally increases. In either case, accurate measurement becomes difficult (Fig. 7).

When the distance between the object to be measured and the transmitting coil 2 falls within 0.2 times the distance G between the transmitting coil 2 and the receiving coil 3, the magnetic line spacing decreases and the signal increases, which is not desirable from the viewpoint of accuracy. . If the distance is further than that, the change in the output signal becomes small and accurate measurement can be performed. From this point of view, the container 1
The distance between 0 and the transmitting coil 2 is preferably 0.2 G or more, preferably 0.3 G or more, and more preferably 0.35 G or more.

When the distance between the object to be measured and the receiving coil 3 falls within 0.2 times the distance G between the transmitting coil 2 and the receiving coil 3, the detection sensitivity sharply increases and the signal increases, which is desirable from the viewpoint of accuracy. Absent. If the distance is further than that, the change in the output signal becomes small and accurate measurement can be performed. From this point of view, the container 1
The distance between 0 and the receiver 3 should be 0.2 G or more,
0.3G or more is desirable, and 0.35G or more is more desirable.

The distance between the object to be measured and the transmitting coil 2 and the receiving coil 3 can be adjusted by providing or laying a container stand 11 having an appropriate thickness under the container 10 for semiconductor particles. Like the container 10 for semiconductor particles, the container base 11 also needs to be electrically insulating.

The distance between the object to be measured and the receiving coil 3 can be adjusted by adjusting the installation height of the belt conveyor 1. In this case, the belt of the belt conveyor needs to be electrically insulating, like the container, in that it does not block the magnetic lines of force.

The object to be measured is preferably filled in a fixed container 10 for measurement. From the point of accuracy, the thickness of the object to be measured in the direction of the magnetic force lines is preferably 0.2 G or less, preferably 0.1 G or less, and more preferably 0.05 G or less.

In these cases, the magnetic field line spacing is considered to be substantially uniform over the entire container, so that a constant signal voltage is obtained even if the electrical resistivity distribution of the object to be measured in the container is uneven. The same applies when the thickness of the container 10 in the direction of the magnetic force lines is sufficiently smaller than the distance between the transmitting coil 2 and the receiving coils 3 and 3 and is not parallel to the magnetic force lines. At this time, if the angle formed by the magnetic field lines with the main surface of the container 10 is 45 ° or more, the magnetic field line intervals will be uniform, and 60 ° or more is more desirable.

As a result, the semiconductor particles having a uniform maximum particle size are filled in a predetermined container, or the semiconductor particles are sent to a belt conveyor moving at a predetermined speed without filling the predetermined container. Thus, the electrical resistivity of the semiconductor material could be measured efficiently and highly accurately without measuring the weight.

[0031]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. 1 and 3 are process diagrams of an electrical resistivity measuring method showing an embodiment of the present invention, and FIGS. 2 and 4 are configuration diagrams of a measuring apparatus suitably used in the electrical resistivity measuring method.

In this embodiment, the electrical resistivity of the silicon semiconductor scrap material is measured, and the semiconductor scrap material is selected according to the electrical resistivity. This semiconductor scrap material is an aggregate of amorphous semiconductor particles having different shapes and weights as well as electrical resistivity.

In the first embodiment of the present invention, as shown in FIG. 1, the massive semiconductor scrap material contained in the hopper is cut out and crushed into a large number of semiconductor particle aggregates. This is sieved to a predetermined particle size and then filled in a container. The container is a box of a certain shape, or a cup or bag having an opening. The material of the container is an electrical insulating material such as vinyl, nylon or plastic. Dotted lines in FIG. 1 indicate that settings and inputs have been made in advance.

As shown in FIG. 2, the detection unit of the electrical resistivity measuring device comprises a transmitting coil 2 and receiving coils 3 and 3 provided with a belt conveyor 1 carrying a container 10 filled with semiconductor particles sandwiched therebetween. ing. A transmission coil 2 provided above the belt conveyor 1 constitutes a high-frequency transmission unit in combination with an oscillator 4, and when a high-frequency current of a predetermined frequency is supplied from the oscillator 4, an assembly of semiconductor particles passing therethrough. Is set wide enough to irradiate effective magnetic field lines to the whole. The radius of the container is preferably smaller than the penetration depth in order to irradiate the entire semiconductor particles with effective high-frequency magnetic force lines.

The receiving coils 3 and 3 provided below the belt conveyor 1 are combined with the differential amplifier 5, the lock-in detector 6 and the phase shifter 7 to form a receiver. Output as voltage ratio. Lock-in detector 6
Performs synchronous detection using the reference signal from the oscillator 4,
The S / N is improved by cutting off all the noises whose frequencies are different from those of the reference signal. The phase shifter 7 adjusts the phase of the reference signal and cuts the magnetic absorption noise in the received wave to improve the S / N. In the first embodiment, the method of extracting the signal by differential amplification using two receiving coils 3 has been described, but the present invention is not limited to this.

When the container 10 filled with semiconductor particles does not pass between the transmitting coil 2 and the receiving coils 3 and 3, the receiving coils 3 and 3 which are differentially coupled do not generate a voltage. When the container 10 filled with the semiconductor particles passes between them, the entire semiconductor particles are irradiated with high-frequency magnetic force lines. As a result, some of the high frequency energy is absorbed by the semiconductor particles,
The output voltage V corresponding to the energy loss is measured by the receiver. The energy loss generated at this time is not only proportional to the ratio of weight to resistivity W / ρ, but also the maximum particle size d
_It was also found to be proportional to the square of _max . It was also found that the height depends on the height of the container base 11 laid under the container 10.

Therefore, in the first embodiment, as shown in FIG. 1, the maximum particle diameter d _max and the weight W are set in advance to predetermined values. Further, the height of the container base 11 laid under the container 10 is also constant. An output voltage when passing through a standard sample with a known electrical resistivity ρ is given to a computer to create a calibration curve (relationship between V and ρ under this measurement condition). Then, the output voltage V when the object to be measured made of semiconductor particles passes is given to the computer, and the data is collated with a calibration curve (relationship between V and ρ obtained in advance) in the computer to determine the electrical property of the object to be measured. Calculate the resistivity ρ.

Next, a second embodiment of the present invention will be described. FIG. 3 is a process diagram of an electrical resistivity measuring method showing a second embodiment of the present invention, and FIG. 4 is a configuration diagram of a measuring device used in the electrical resistivity measuring method.

In the second embodiment, as shown in FIG. 3, the massive scrap material contained in the hopper is cut out and crushed into a large number of semiconductor particle aggregates.
This is screened to a maximum particle size d _max , then cut out on a belt conveyor at a constant weight speed W ′ and sent out to a non-contact measuring device. The material of the belt is an electrically insulating material such as urethane and nylon. The dotted line in FIG. 3 is
Indicates that the setting / input has been made in advance.

As shown in FIG. 4, the detecting section of the resistivity measuring device includes a transmitting coil 2 and a receiving coil 3 which are provided with a belt conveyor 1 for carrying an object to be measured which is an aggregate 11 of semiconductor particles sandwiched therebetween. I have it. The oscillator coil 2 provided above the belt conveyor 1 is combined with an oscillator 4 to form a high frequency oscillator, and by being supplied with a high frequency current of a predetermined frequency from the oscillator 4, an assembly of semiconductor particles passing therethrough. Is set wide enough to irradiate the entire magnetic field with effective magnetic field lines.

The receiving coil 3 provided below the belt conveyor 1 is combined with the preamplifier 8, the lock-in detector 6 and the phase shifter 7 to form a receiver. Output as. The lock-in detector 6 performs synchronous detection using the reference signal from the oscillator 4 and cuts out all the noises whose frequencies are different from those of the reference signal to improve S / N. The phase shifter 7 adjusts the phase of the reference signal and cuts the magnetic absorption noise in the received wave to improve the S / N. Further, by using two receiving coils 3 as in the first embodiment and performing differential amplification, the S
/ N can be improved.

When the object to be measured, which is the aggregate 11 of semiconductor particles, passes between the transmitter coil 2 and the receiver coil 3, the entire semiconductor particles are irradiated with high-frequency magnetic force lines. As a result, some of the high frequency energy is absorbed by the semiconductor particles,
The output voltage V corresponding to the energy loss is measured by the receiver. It was found that the energy loss generated at this time is not only proportional to the ratio W ′ / ρ of the weight velocity and the resistivity but also to the square of the maximum particle diameter d _max .

Therefore, in the second embodiment, as shown in FIG. 3, the maximum particle diameter d _max and the weight speed W ′ are set to predetermined values in advance. An output voltage when passing through a standard sample with a known resistivity ρ is given to a computer to make a calibration curve (relationship between V and ρ under this measurement condition). Then, the output voltage V when the object to be measured made of semiconductor particles passes is given to the computer, and the data is compared with the calibration curve (relationship between V and ρ obtained in advance) in the computer to determine the resistance of the object to be measured. Calculate the rate ρ.

As described above, the maximum particle diameter d _{max is} previously set.
And the weight W are adjusted to a predetermined value, and the container 10 filled with the semiconductor particles is passed between the oscillation coil 2 and the reception coils 3 by the belt conveyor 1, or the maximum particle diameter d is previously set.
By sending out those having a uniform _max on a belt conveyor at a predetermined weight speed, the electrical resistivity ρ of the aggregate of semiconductor particles can be measured efficiently without contact and with high accuracy. Then, after the measurement, the aggregate of semiconductor particles is selected based on the measured value and accommodated in the storage container according to the electrical resistivity.

By the way, the penetration depth δ of the magnetic lines of force in the semiconductor particles is δ (cm) = 5030 (ρ / μ _rf ) ^1/2
Is. Here, ρ is electrical resistivity (Ωcm), μ _r is relative permeability (1 for non-magnetic material), and f is frequency (Hz). If the penetration depth δ of the line of magnetic force is smaller than the radius of the container, the amount of high-frequency absorption in the particles in the central portion is small, and the output voltage V
May not be proportional to W / ρ. Since the semiconductor particles are a non-magnetic substance, δ> 10 cm is satisfied when μ _r = 1 and ρ> 1 Ωcm and the frequency f is set to 250 kHz or less, and the output voltage V is proportional to W / ρ. On the other hand, the frequency f is 50 kHz
In the case of z, δ> 22 cm, but since the wave emitted from the transmission coil 2 is weak and the detection voltage is small, the measurement error of the electrical resistivity ρ increases. Therefore, the oscillation frequency is 50-
250 kHz is preferred.

Next, the results of actual implementation of the electrical resistivity measuring method of the present invention will be described.

[0047]

Example 1 A silicon semiconductor ingot whose electric resistivity ρ is known is crushed, and 1 to 10 aggregates having a particle diameter of 2 mm to 12 mm out of a large number of crushed silicon particles are crushed.
It was filled in a vinyl bag (container) of a predetermined size. This was placed on the container base 11 and passed between a transmitting coil and a receiving coil on a belt conveyor to measure various conditions. The results are shown in Table 1.

The distance between the container 10, the transmitting coil 2 and the receiving coils 3 and 3 was changed by adjusting the height of the container base 11. The thickness of the container 10 was changed by adjusting the amount of particles to be filled. The angle between the main surface of the bag and the magnetic lines of force was changed by adjusting the inclination of the container base 11. Are also shown _{/ ρ 4 | ρ nc -ρ 4} | electrical resistivity [rho _nc by the non-contact measurement of this time, the difference between the electrical resistivity [rho ₄ by four probe method. The unit is the distance G between the transmitting coil and the receiving coil.

[0049]

[Table 1]

When the distance between the container and the transmitting coil and the receiving coil is 0.2 G or more, the difference from the 4-probe method is 5% or less. There is a difference of 10% if either one is off. The difference is 10% when the thickness of the container is not less than 0.2G or when the angle between the main surface of the container and the magnetic line of force is 45 degrees or more, and these are 10% difference when using scrap materials for solar cells. It is within the allowable range of the fluctuation of the electrical resistivity.

However, both the thickness of the container and the distance between the container and the receiving coil or the distance between the transmitting coil and the distance between the container and the transmitting coil and the receiving coil are 0.
There is a difference of 20% if the angle between the main surface of the container and the magnetic line of force is 45 degrees or less, and if the container thickness is 0.5G, the container and transmitter coil If the distance from the receiving coil is off, the difference is 25%. If these materials are used as scrap materials for solar cells, the electrical resistivity of the solar cells cannot be controlled within the target range.

[0052]

Example 2 A silicon semiconductor ingot of which electric resistivity ρ is known is crushed, and an aggregate having a particle size of 1 mm to 30 mm among a large number of crushed silicon particles is used at 1 kg / min using a vibrating feeder. It was sent out from inside the hopper at the weight speed of, was conveyed by a belt conveyor, was passed between the coils of the non-contact measuring device, and was measured under various conditions. The results are shown in Table 2.

The distance between the object to be measured and the transmitting coil and the receiving coil was changed by adjusting the installation height of the belt conveyor. The thickness of the measured object was changed by adjusting the speed of the belt conveyor. Similar to Example 1, the electrical resistivity ρ _{nc obtained} by non-contact measurement at this time and the electrical resistivity ρ obtained by the 4-probe method were used.
₄ and the difference | ρ _nc −ρ ₄ | / ρ ₄ are also shown. The unit is the distance G between the transmitting coil and the receiving coil.

[0054]

[Table 2]

When the distance between the measured object and the transmitting coil and the distance between the receiving coil and the thickness of the measured object are both satisfied, the difference from the 4-probe method is 12% or less. Even if it is used for a battery, it is within the allowable range of fluctuation of electric resistivity.

However, when the difference from the electric resistance measured by the 4-probe method is 25%, the fluctuation range of the electric resistance becomes large when it is used as a raw material for a solar cell, for example, 1.5 Ωcm.
It is difficult to fit within a narrow standard such as ~ 2 Ωcm. In addition, when the thickness of the object to be measured and the distance between the object to be measured and the transmitting coil or the distance between the receiving coil are deviated, there is a difference of 50% from the 4-probe method. It is not possible to control the electric resistivity of.

Although the second embodiment has a large difference from the four-probe method as compared with the first embodiment, if the allowable value of the electric resistivity is not so strict, the scrap material can be used as a container if the condition is satisfied. It can be used enough considering the trouble of packing it in a bag.

[0058]

As described above, according to the method for measuring the electrical resistivity of a semiconductor of the present invention, a high frequency oscillator of a high frequency oscillator is applied to an object to be measured which is an aggregate of semiconductor particles whose maximum particle size is predetermined. And measuring the output voltage obtained from the receiving coil arranged opposite to the transmitting coil with the object to be measured sandwiched between them, and measuring the output voltage and the maximum particle size and weight of the object to be measured from the electric power of the semiconductor particles. By calculating the resistivity, it is not necessary to grind an amorphous bulk material such as a silicon single crystal scrap material to obtain a flat surface for measurement by the 4-probe method, and the weight of the bulk semiconductor ingot. The electrical resistivity can be measured efficiently and with high accuracy without performing measurement.

[Brief description of drawings]

FIG. 1 is a process diagram of an electrical resistivity measuring method according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram of a measuring device used in the electrical resistivity measuring method according to the first embodiment.

FIG. 3 is a process diagram of an electrical resistivity measuring method according to a second embodiment of the present invention.

FIG. 4 is a configuration diagram of a measuring device used in the electrical resistivity measuring method according to a second embodiment.

FIG. 5 is a graph showing the relationship between the maximum particle size and the amplitude of signal voltage.

FIG. 6 is a graph for calculating an electrical resistivity from the amplitude of a signal voltage.

FIG. 7 is a graph showing the relationship between the position of the object to be measured and the amplitude of the signal voltage.

[Explanation of symbols]

1 belt conveyor 2 transmitter coil 3 receiver coil 4 High frequency oscillator 5 Differential amplifier 6 Lock-in detector 7 Phase shifter 8 Preamplifier 9 Aggregate of semiconductor particles 10 Container for filling semiconductor particles 11 container stand

Front page continuation (72) Tomohiro Onizuka Tomohiro Onizuka, 260 Funao, Kainan City, Wakayama Prefecture Wakayama Citix Solar Co., Ltd. (56) Reference JP 2001-133490 (JP, A) JP 11-253892 (JP) , A) JP 9-24344 (JP, A) JP 1-92666 (JP, A) JP 57-204450 (JP, A) JP 49-25870 (JP, A) Actual development Sho 60-92834 (JP, U) JP-B-50-4552 (JP, B1) (58) Fields investigated (Int.Cl. ⁷ , DB name) G01R 27/02 G01N 27/72

Claims (6)

(57) [Claims] 1. A reception device which irradiates a high frequency of a high-frequency oscillator from a transmission coil to a measurement target composed of an aggregate of semiconductor particles having a maximum particle size determined in advance, and which is arranged so as to face the transmission coil with the measurement target sandwiched therebetween. Measuring the output voltage obtained from the coil, calculating the electrical resistivity of the semiconductor particles from the measured output voltage and the maximum particle size and weight of the measurement object, a method for measuring the electrical resistivity of a semiconductor material . 2. The method for measuring electrical resistivity of a semiconductor material according to claim 1, wherein an aggregate of semiconductor particles having a predetermined maximum particle size is put in a predetermined weight of an electrically insulating container for measurement. 3. The method for measuring the electrical resistivity of a semiconductor material according to claim 1, wherein the aggregate of semiconductor particles having a predetermined maximum particle diameter is measured while being sent out at a predetermined weight speed. 4. The semiconductor material according to claim 1, wherein the distance between the object to be measured and the transmitting coil of the high frequency transmitter is 0.2 times or more the distance between the transmitting coil and the receiving coil. Method for measuring electrical resistivity. 5. The electricity of the semiconductor material according to claim 1, wherein the distance between the measuring object and the high frequency receiving coil is 0.2 times or more the distance between the transmitting coil and the receiving coil. Method of measuring resistivity. 6. The measurement of the electrical resistivity of the semiconductor material according to claim 1, wherein the thickness of the object to be measured is 0.2 times or less the distance between the high frequency transmitting coil and the high frequency receiving coil. Method.