JP3425209B2 - Field emission type cold cathode array - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION The present invention relates to an electric field over a large area.
Field emission type cold cathode electrodes with emission type cold cathodes formed in an array.
About Ray. [0002] 2. Description of the Related Art A field emission cold cathode is an ultrafast microwave.
Devices, power devices, and other electronic devices
Applications have been advanced in recent years. In particular, field emission cold cathodes
Application to image display devices attracts attention in recent years, and it is realized
Research and development is underway. Field emission cold cathode
Self-luminous flat image display device by using
Can be realized. Also, like the conventional liquid crystal display device
View that the contrast characteristics differ depending on the viewing angle
There is also an advantage that the problem of the field angle characteristics does not occur
You. In addition, there is no need for a backlight or reflector,
There are also advantages such as simplification and reduction of power consumption
is there. In this sense, field emission cold cathode image display
Application to equipment is extremely widespread and has great advantages
This field is not suitable for field emission cold cathodes.
It is a field that is particularly expected to be used. An image using such a field emission type cold cathode
The display device is a cold cathode, in view of the image quality and reliability of the display device.
Can be formed to a uniform size and shape.
desirable. A place to consider developing applications for image display
Large display screen as well as small display screen
It is also important to do. In recent years, in recent years, displays such as televisions for consumer use have been developed.
For example, for information processing,
When an image display device is used for the display terminal device of the device,
Are required to display images on large screens.
I have. Therefore, such a large display screen has been field emission.
Various technologies to be realized by display devices using a cold cathode are studied
But especially for such large screen display devices
Had the following problems. [0005] Conventionally, as a method of forming a cold cathode, a rotating cathode has been used.
Method using vapor deposition or crystal anisotropic etching
A law was proposed. [0006] In the conventional rotary evaporation method, each cold cathode
While rotating the substrate around it every time
Array of extremely large numbers of cold cathodes
For image display devices that need to be formed in a shape,
There is a problem that it takes a long time in the manufacturing process. Only
The cold cathode arrays formed by them also
One is not uniform in a large area, and when the variation is large
There was a problem. On the other hand, for example, a single crystal silicon
Forming cold cathode arrays by processing with anisotropic etching
The anisotropic etching method requires a large area crystal substrate.
For example, to realize an image display device of A4 size
Requires an A4 size single crystal silicon wafer
However, production of such a large single crystal substrate is actually
It is difficult and impractical. For forming uniform cold cathodes in an array,
As a method, the applicant of the present invention disclosed in Japanese Patent Application No.
The manufacturing method by the method was developed. Briefly outline the technology
In other words, a recess is formed in a single crystal substrate, and the shade is formed in the recess.
The technology is to form a cold cathode by depositing polar materials.
You. According to this manufacturing method, the uniform shape and size can be easily obtained.
Cold cathode can be formed, uniform cold
The poles can be formed in an array. However, even in such a method,
Forming a large-area substrate with a concave portion to be used first
It is difficult to prepare the large crystal substrate described above.
It is extremely difficult as well as
5-6 inch diameter of the silicon wafer used
Up to 8 inches or less
The outer dimensions of the array are limited to the wafer. Therefore, a uniform cold cathode as described above is obtained.
Example that is necessary as a display device even when using the transfer method
For example, a field emission type cold cathode array
It was difficult to realize b. [0011] As described above, as described above, the conventional
In the technology, field emission cold cathodes are particularly large in an array.
It was difficult to form over the area. Therefore,
Image display on a large screen using a field emission cold cathode array
Forming the device was virtually impossible. The present invention has been made to solve such a problem.
The purpose is simple and short sloop
Uniform over a large area that can be formed with
To realize a field emission type cold cathode array of size and shape
And there. And such a large-area field emission type cold shade
By making pole arrays feasible, for example,
Surface image display device and large area field emission cold cathode array
To form large-scale integrated circuits by integrating
Is a further object of the application. [0014] [MEANS FOR SOLVING THE PROBLEMS]
In addition, the field-effect cold-cathode array of the present invention has a sharp tip.
Multiple emitters of different shapes project from the main surface in an array
Exposing the emitter material layer and the tip of the emitter;
An insulator formed to cover the emitter material layer
An edge layer; and
To expose the tip and surround the tip without contact.
A gate electrode layer having an opening formed therein, and the plurality of emitters.
On the main surface of the emitter material layer in the gap between the
And formed from the same forming material as the emitter material layer
From the main surface of the emitter material layer to the tip of the emitter
From the top of the main surface of the emitter material layer
And a substrate gap holding member having a high surface height.
Cold cathode array substrate and anode electrode on support substrate
And at the top in the height direction of the substrate gap holding member,
The substrate gap holding member joined to the cold cathode array substrate
The cold cathode array substrate is paired with the
And an anode substrate arranged in
ing. [0015] It is formed on the above-mentioned anode substrate.
If a phosphor layer is formed so as to cover the anode electrode,
Emitted from the emitter and fly to the anode electrode
Electrons collide with the phosphor layer, and light is generated at that portion. This
Utilizing the above-mentioned phosphor layer by utilizing the phenomenon of
Field-effect cold cathode array according to the present invention
It can also be applied as an image display device. Further, each of the plurality of emitters may be, for example,
Separate each element to make it electrically controllable individually
Each emitter as an individual circuit element
It is also possible to route. In the above structure, the emitter material layer
The substrate for supporting the emitter material is further added to
Mechanical strength (that is,
(Durability, flatness, etc.). [0018] The present invention looks at each of the above-mentioned cold cathodes.
As a method of manufacturing the cold cathode, the present applicant
Manufactured using the so-called transfer method disclosed in 4-186753
Things. And formed on each substrate by this transfer method
Needless to say, the cold cathode array
Is not formed, so it is formed for each substrate like that
The cold cathodes arranged in a plane on multiple substrates
The screen has been made larger by doing this.
In the space (gap) between adjacent substrates,
To maintain the gap distance between the gate electrode and the tip of the emitter.
A substrate gap holding member is deposited and formed. This substrate gap maintenance
To easily increase the area by depositing members
The distance between the anode and the anode is uniform over a large area
Holding can be realized by a simple method. That is, the first substrate has a concave portion with a sharp bottom.
An insulating layer on the surface of the first substrate provided with the concave portion.
To form Next, the first substrates are adjacent to each other with a gap
Arrange multiple pieces. The first substrate arranged in this way
On the insulating layer of the first substrate while filling the gap between the cows
An emitter material is deposited to fill the recess. Emitter
The material is deposited in the recesses on the insulating layer of the aligned first substrate
As well as deposits between adjacent substrates.
So juxtaposed by this deposited emitter material
The emitter material layer is also integrated between the first substrates
Between the cold cathode array substrate and the anode electrode
A substrate gap holding member for holding the gap is also formed.
It is. Moreover, such deposition of the substrate gap holding member is not effective.
Simultaneous and simultaneous with the deposition of the mitter material layer
It is. That is, the field emission type cold cathode electrode according to the present invention is used.
When fabricating the ray structure, the emitter material must be deposited
Stacking to form the emitter itself
Forming material can be deposited in gaps between substrates
Therefore, the step of separately forming the substrate gap holding member is omitted.
And the manufacturing process can be simplified. I
Or, the planar pattern width of this substrate gap holding member is
The gap between substrates that are arranged in parallel in a plane
Can be controlled very easily by adjusting
Noh. In other words, alignment when arranging substrates one by one
You just need to do it. Also the height of the board gap holding member
(Thickness) is, of course, the thickness of the first substrate.
Therefore, it is necessary to adjust the thickness of the first substrate.
And its height (thickness) is controlled very easily and accurately
It is possible to Alternatively, the substrate gap holding unit
If you want to make the height of the material smaller than the thickness of the first substrate
In this case, a convex that can be inserted into and removed from the gap between the first substrates
Part of the substrate gap holding member by the height of the convex part.
Use a manufacturing jig with a convex part that reduces the height
Therefore, the height at which the substrate gap holding member is deposited can be controlled.
No. The present invention is based on Japanese Patent Application No. 4-186753 filed by the present applicant.
Further advance the technology disclosed in
Anode electrode in a uniform shape over a large area
A source that enables the realization of a cold cathode array with a uniform gap between the poles
You can say Ming. [0022] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a field emission type cold cathode array according to the present invention will be described.
Will be described in detail with reference to the drawings. (Embodiment 1) FIG. 1 shows an electric field emission device according to the present invention.
It is sectional drawing which shows the outline | summary of the structure of a projection type cold cathode array. Figure
2 is a planar structure of the field emission cold cathode array according to the present invention.
FIG. Incidentally, in the first embodiment,
Image display of the field emission cold cathode array according to the present invention.
A specific example when applied to an apparatus will be described. The field emission type cold cathode array of the first embodiment
As shown in FIG. 1, the image display device using
From the emitter material layer 1 and the emitter material layer
Pyramid-shaped emitter 2 protruding from the source, its emitter
2 and the emitter material layer except for the tip portion 2
An insulating layer 3 formed so as to cover almost the entire main surface of
In addition, the insulating layer 3 covers almost the entire surface and the insulating layer 3
The area around the emitter 2 exposed from the surface is almost equivalent to the thickness of the insulating layer 3.
An opening is provided to surround the
Gate electrode layer that functions as gate (or cathode)
4 and an anode arranged opposite to the cold cathode array substrate
To maintain the gap between the anode substrate where the electrodes are formed
Substrate gap formed from the same material as emitter material layer 1
A cold cathode array substrate 6 provided with a holding member 5;
Almost parallel and opposed to the cold cathode array substrate 6 with a gap
Anode layer 8 and phosphor layer 9 on glass substrate 7 to be
From the anode substrate 10 formed in this order.
The main part is formed. When this is viewed in a plan view, as shown in FIG.
A grid partitioned by the grid of the substrate gap holding member 5
The emitters 2 are arranged in a matrix in the
In addition, the matrix is formed for each of the aforementioned lattices
It is arranged over a large area as a whole. That lattice
The areas enclosed by
Almost corresponds to the dimensions of each single-crystal silicon substrate
I have. The main part is formed in the above structure.
The field emission type cold cathode array according to the present invention is, for example, shown in FIG.
Manufactured through the steps schematically shown in (a) to (h)
Is done. An example of the manufacturing method will be described below with reference to FIG.
It will be described in detail. First, as the first substrate 11, a Si single crystal base
Prepare a board. Then, as shown in FIG.
Substrate 11 on one plane (this is called a first main surface) 11
a. Etching by anisotropic etching from a
The shape is sharply pointed toward the bottom at a constant pitch (in the figure
(It looks like an inverted pyramid type). This is, for example, a p-type (1,0,0) crystal plane orientation.
Dry oxidation method from the first main surface side 11a of the first substrate 11
Thermal oxidation treatment, etc. to a thickness of about 0.1 μm
Thermal oxide film (SiO_Two) A film 13 is formed and this thermal oxide film
Photoresist 14 is applied on 13 surfaces by spin coating or the like.
And apply. And 0.8 μm using a stepper, for example.
Exposure and development processing etc. are performed so that a rectangular opening of
To pattern the photoresist 14
For example, NH_FourUse F / HF mixed solution as etchant
And the thermal oxide film (SiO_Two) Selection of 13 exposure areas
Perform the switching. And remove the photoresist 14
After that, anisotropic etching treatment is further performed with a 30% KOH aqueous solution.
As shown in FIG. 3A,
An inverted pyramid-shaped recess 12 having a depth of 0.56 μm is formed on the first substrate.
11 is formed on the first main surface 11a side. Next, as shown in FIG.
A thermal oxidation treatment is applied to the substrate 11 to form an insulating layer 3 having a thickness of 0.2 μm.
To form Then, on the insulating layer 3, for example, W, Mo,
Sputtering a metal material such as Ta
Emi with a thickness of about 0.8 μm while filling the mid-shaped recess 12
A cutter material layer 1 is formed. Of this emitter material layer 1
Deposited to fill the pyramid-shaped recess 12
The protruding portion is formed of the emitter material shown in FIG.
It becomes the Mitter 2. On the other hand, at the same time,
Emitter material is also used in the gap between the first substrates 11
The material layer 1 (forming material) is deposited.
For example, as shown in FIG.
You. In this embodiment, the stack of the substrate gap holding member 5 is
Makes product formation more reliable and eliminates the need for subsequent processes
That ensures more reliable removal of the first substrate 11 by etching
In order to make the gap between the adjacent first substrates 11
For example, as shown in FIG.
As shown in FIG.
It was processed into a paper shape. Here, the emitter material layer 1 is deposited.
When making the first substrate 11, even if the end face of the first substrate 11 is vertical,
No voids between vertical wall and deposited emitter material
If no fall occurs, the edge of the first substrate 11
As shown in FIG. 5, the end face of the first substrate 11 is cut vertically.
Needless to say, the shape may be raised. is there
Alternatively, the substrate gap holding member 5 is deposited vertically as described above.
In this case, a girder is formed in a vertically convex shape as shown in FIG.
Using the jigs as support substrates for each first substrate 11
Is also good. At this time, the height h of each girder 602 of the jig 601
Is the height of the emitter material deposited from the top of the girder.
That is, for adjusting the height H of the substrate gap holding member.
You can set it to height. Using such a jig 601
FIG. 5 shows an example in which the substrate gap holding member 5 is formed.
It was shown to. As described above, the emitter material layer shown in FIG.
Depositing the emitter material in the recesses 12 in the step of depositing
4 in parallel with the formation of the emitter 2
As described above, the gap between the adjacent substrates of the first substrate 11 is
A substrate gap holding member 5 is formed by depositing a mitter material.
be able to. Here, the substrate gap holding member 5 is deposited.
Not be integrated at the interface with the emitter material
Using a suitable material for the support substrate 21
Needless to say, to block the. Note that the first substrate 11 is etched.
May be performed individually for each first substrate 11.
Alternatively, a plurality of first substrates 11 are arranged on a support substrate 21.
And collectively put them on top of them as shown in Fig. 3.
Emitter material layer 1, emitter 2, insulating layer
3. The gate electrode layer 4 may be formed. That is, FIG.
Until the process shown in FIG.
Alternatively, first, the first substrate 11 may be used as a supporting substrate.
21 is mounted on and fixed, and the emitter material is placed thereon.
Layer 1 may be deposited. In particular, the manufacturing process
The size of manufacturing equipment such as film forming equipment used in
If not, form all large-area arrays simultaneously.
Can reduce the throughput.
Therefore, it is preferable to form them collectively. On the other hand, large area
Forming the recess 12 completely defect-free over
In a mass production line, for example,
Defects inevitably occur in the order of several percent due to random factors
Therefore, it is considered impossible in practice. On the spot
In this case, the plurality of first substrates 11 are individually
Through the steps up to (a), the recess 12 has no defect in it.
Select only those formed in
Only the substrate 11 is placed on the support substrate 21 and fixed.
The method of proceeding to the manufacturing process shown in FIG.
You may take it. Here, the first substrate 11 is used as the supporting substrate 21.
When arranging a plurality of first substrates, the first substrate 1 adjacent thereto
The distance between the two is l_gapThen, this l_gap
= 0 is ultimately desired for a cold cathode array.
However, a space for forming the substrate gap holding member 5 is required.
Therefore, the pattern width of the substrate gap holding member 5 can be obtained.
L_gapShould be set. For example, the present invention is applied to an image display device as in this embodiment.
When using the field emission cold cathode array according to the invention,
l_gapIs formed in a pattern width of about 20 to 50 μm.
It is desirable. If it is this width, it will be a display device
When the screen is formed, it is hardly noticeable in the screen.
Because it is. Alternatively, the dimensions of the substrate gap holding member 5
Is an image display device using the cold cathode array according to the present invention.
From the overall screen size and pixel size
The size should be inconspicuous and the gap maintaining function should be sufficient.
Size and pattern that can be
Just do it. Subsequently, a switch is formed on the emitter material layer 1.
For example, an IT of about 1 μm
O (indium-tin oxide) is deposited to form a conductive layer 15.
Then, a laminate as shown in FIG. 3B is obtained. Here, the conductive layer made of ITO or the like is used.
15 may be omitted depending on the material of the emitter material layer 1.
Good. However, in that case, the conductive material is
It is desirable that the function as the electric layer 15 is also used. On the other hand, as the second support substrate,
Surface), an Al layer 16 for an electrostatic bonding electrode having a thickness of about 0.4 μm.
Pyrex Gala about 1mm thick coated with
A metal plate 17 is prepared, and as shown in FIG.
To attach Pyrex glass plate 17 to the surface of
And several hundred volts between the conductive layer 15 and the Al layer 16.
And apply a voltage of
Attach the interface. This bonding can be done with adhesive
Good, but from the point of view of reliable and simple connection method
Such an electrostatic bonding method is preferred. Thus Pyrex Gala
After bonding the glass plate 17, the Pyrex glass plate 17
An Al layer 16 coated on the back surface of
O_Three・ CH_ThreeEtching removal with COOH / HF mixed acid solution
I do. Thereafter, the entire substrate is turned upside down.
And ethylenediamine / pyrocatechol / pyrazine
Aqueous solution (mixing ratio is 75cc: 12g: 3mg: 10
cc) as an etchant
The first substrate 11 is etched away from the second main surface 11b side.
Then, as shown in FIG. 3 (d), the insulating layer 3 was covered.
The projection 18 made of the emitter material, that is,
To obtain a laminated body having a portion formed thereon. This etching process
, The insulating layer 3 stops etching of the first substrate 11.
Pyramid type with a sharp tip that functions as a stop layer
The tip of the emitter 2 made of the above-mentioned emitter material is
It serves to protect against erosion by the cleaning fluid. Next, as shown in FIG.
On the insulating layer 3 exposed by removing the substrate 11 by etching
W (tungsten) by sputtering, for example
The layer 19 is formed to a thickness of about 0.5 μm. And this W layer
19, for example, by a spin coating method,
The tip of the pyramid-shaped emitter material projection 18 is hidden
To a thickness of about 0.9 μm, for example.
A photoresist 20 is applied. Thereafter, dry etching by oxygen plasma
3F, the emitter material is processed as shown in FIG.
The tip 19a of the W layer 19 covering the tip of the material projection 18 is
Etch part of photoresist 20 to expose
Remove. Then, a reactive ion etching process is performed.
The W exposed by the etching removal of the photoresist 20
The tip 19a of the layer 19 is selectively removed. Thus
When the tip 18a of the protrusion 18 made of the mitter material is exposed,
Process the W layer 19 so as to cover the other parts together,
A gate electrode layer 4 as shown in FIG. Next, the remaining photoresist 20
At the time of selective etching of the tip 19a of the ball W layer 19,
Even after functioning as a mask, still on the main plane of W layer 19
The remaining photoresist 20 is removed. And
NH_FourThe emitter material using a mixed solution of F and HF;
Remaining in the region corresponding to the tip 18a of the projection 18 made of
The insulating layer 3 is selectively removed by etching to remove the emitter material.
The tip 18a of the material projection 18 is exposed. Thus, as shown in FIG.
Pyramid-shaped emitter through the opening 19b of the gate electrode layer 4.
The tip 18a of the material projection 18, ie, the tip of the emitter 2
The field emission type cold cathode according to the present invention having an exposed portion is large.
Formed in an array over the area and in a grid
The cold cathode array substrate 6 on which the gap holding member 5 is formed is obtained.
It is. Then, as shown in FIG.
An electrode layer 8 and a phosphor layer 9 are formed on a glass substrate 7.
Anode substrate 10 facing the tip of emitter 2
In accordance with the present invention, as opposed to the cold cathode array substrate 6 as described above.
The main part of the device using the field emission type cold cathode
You. At this time, as is clear from FIG.
The gap between the substrate 6 and the anode substrate 10 is a substrate gap holding unit.
Is supported by the height H of the material 5 and the distance between them is set to the entire surface of both substrates.
Maintained evenly across. According to the present invention in which the main part is formed as described above,
Field emission type cold cathode arrays
Accurate shape of recess 12 formed by photolithography process
The insulating layer 3 formed along the shape is formed into a pyramid-shaped emitter.
Forming the emitter material layer 1 on the substrate 2
A first substrate 1 on which a material is deposited and a plurality of first substrates 1 are arranged
The shape of the emitter material layer 1 is also formed in the gaps adjacent to each other.
The material is deposited. Thereby, the emitter 2 and the substrate
The gap holding member 5 is used to deposit one emitter material at a time.
Conventional spin deposition as it can be formed in the process
Efficient over a large area, unlike emitters by the method
The cold cathode array substrate 6 having the exact shape and dimensions
It can be formed with a short throughput. The emitter 2 and the gate electrode layer 4
Distance (emitter-gate spacing) is also determined by the thermal oxidation method.
The insulating layer 3 can be formed with a thickness controlled precisely by
Capability, each field emission cold cathode is low
Emission efficiency of electrons can be increased by voltage driving.
You. The insulating layer 3 is formed by a thermal oxidation method.
2 (a) and 2 (b).
The tip of the conical portion of the insulating layer 3 covering the tip is extremely sharp
Shape, so each cold cathode formed along it
The tip of the emitter 2 is also very suitably sharp.
The electric field concentration effect can be dramatically increased. Also heat
Oxidation process is compatible with general semiconductor manufacturing processes
And the process can be simplified. The substrate gap holding member 5 is an anode-based
A portion of plate 10 where annot electrode layer 8 is not formed (d)
The portion of the grid pattern removed by
The note electrode layer 8 and the phosphor layer 9 are removed by etching.
(The part where the surface of the glass substrate 7 is exposed)
Then, it is sufficient to join them at this portion. This board
The gap holding member 5 is formed from an emitter material having good conductivity.
The substrate gap holding member 5 is
8 and the like, through this substrate gap holding member 5,
Short circuit failure between the emitter material layer 1 and the note electrode layer 8
As described above,
The plate gap holding member 5 avoids the anode electrode layer 8 and
The substrate 10 is brought into contact with the glass substrate 7 and
That is, it is formed in a non-contact position avoiding the data 2.
Alternatively, after this substrate gap holding member 5 is formed,
Part of the head surface in contact with the glass substrate 7 and the side surface near the head surface
Cover, or cover almost the entire surface of the substrate gap holding member 5
As described above, an insulating material or the like may be applied. Like this on
By covering the portion with an insulating film, the above-described emitter material layer 1 is formed.
To more reliably prevent short-circuit between
May be. As the emitter material, for example, W or
Use Mo, Pa, or their alloys as materials
Can be. Desired cold shade from such materials
Select materials that are considered to be most suitable for the pole array
May be used. As described above, according to the present invention, as shown in FIG.
As described above, the first substrate 11 has its end face formed into a tapered shape.
The adjacent end faces are equal in width to the width of the substrate gap holding member 5.
Are arranged in an array with only gaps
The emitter material so as to cover almost the entire surface including the gap.
Depositing a plurality of the first substrates
To cover all 11 and fill the gap between them
As the emitter material is deposited,
The formed emitter material layer 1 and emitter 2 are almost entirely
Large area electrode array
A substrate 6 is obtained. And finally, the first substrate 11 is
As described above, the first group is selectively etched away.
In the lattice of each substrate gap holding member 5 corresponding to the plate 11,
(A) has been formed in an array over almost the entire surface.
And In other words, depositing the emitter material like this
The emitter material layer 1, the emitter 2, and the substrate gap holding member 5
Large surface can be formed very easily because they can be formed simultaneously.
Efficient cold cathode array substrate with short throughput
Can be achieved. Also, the first substrate is provided on the support substrate 21.
The plate 11 is connected to each of the first substrates 11 by the aforementioned 20 to
Placing them side by side with a gap of about 50 μm is
It is possible enough. That is, such alignment precision
It is fully possible to achieve the degree. Or the aforementioned
An alignment jig as shown in FIG. 6 may be used.
No. The anode substrate 10 and the cold cathode array base
The alignment accuracy with the plate 6 depends on the distance between the substrate gap holding members 5.
And the horizontal distance between adjacent emitters 2 is l_Two,That
The position of one of the emitters 2 and the end of the annot electrode layer 8 is
Distance l₁Then, l₁<L_Two/ 2 condition is satisfied
It should just be. If the deviation is larger than this condition,
The substrate gap holding member 5 between the substrate 10 and the glass substrate 7
Bonding failure or cold cathode array
The substrate gap holding member 5 of the substrate 6 and the anode substrate 10
Short-circuit failure with the gate electrode layer 8 occurs. In particular,
In the example shown in the present embodiment, the current image display device
Then l_TwoIs about 20 μm, so
Tolerance of deviation of met)₁Is said to be up to about 10μm
It will be. In the above embodiment, the emitter material
Layer 1 has a structure which also serves as a cathode electrode and its wiring.
But also serves as the material used for the emitter material layer 1.
In some cases, the emitter material layer 1
Alternatively, a wiring layer or the like may be formed. Further, a GaAs substrate is used instead of the Si single crystal plate.
Or the like as the first substrate 11 or an emitter
The material for forming the material layer 1 is also replaced with W used in the above embodiment.
In addition, the work function of Mo, Ta, Si, etc. is low
It is also possible to use materials that can be used. Further, the above Pyrex glass plate 1
For example, when a soda glass plate is used instead of 7,
Almost the same effects as in the above embodiment can be obtained. Other ranges that do not depart from the gist of the present invention
The material for forming each part of the field emission cold cathode array of the present invention
It can be said that various changes in materials and manufacturing methods are possible.
Needless to say. (Embodiment 2) The electric field effect of the first embodiment described above
Of the first substrates 11 adjacent to each other in the fruit cold cathode array
Gap l_gapAs shown in FIG.
Next, the planar pattern of each first substrate 11 is
A convex pattern 701 is formed on one of the end sides facing
Is provided, and a concave pattern 702 is provided on the other side,
When the gap between the adjacent first substrates 11 was reduced
At this time, the convex pattern 70 on one end of the adjacent substrate
1 and the concave pattern 702 on the other end are fitted with each other.
The desired spacing l_gapSo that each can be formed
Is also good. That is, the projecting portion of the convex pattern 701
The length of the minute d is l_gapAnd its convex shape
Just fit the tip of the turn 701 into the concave pattern 702
If it is formed in such a shape that_gapSimple and
It can be provided accurately. Moreover, such a pattern
The first substrate 11 formed in the pattern is finally removed.
Therefore, the portions of the concave / convex patterns 701 and 702 are
The gap is also removed, and adjacent grids blow at this point.
The area surrounded by each lattice becomes a void and connects
The cold cathode electrode formed between both substrates.
For example, when vacuuming the inside of a Ray cell
Effective and simple realization of a uniform vacuum state for each child
There is also an advantage that it can be cut. [0057] As described in the detailed description above,
According to the invention, the field emission efficiency is high and the characteristics are large.
Uniform characteristics with very little variation over the product
Production with high yield and short throughput
Field Emission Type Cold Cathode Array with High Productivity
Can be realized. As a result, the present invention
Using such a field emission type cold cathode array, for example, a self-luminous type
Uniform and good with no viewing angle dependence over a large area
Image display device capable of simple display and large-scale collection capable of high-speed operation
An integrated circuit or the like can be realized.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing an outline of the structure of a field emission cold cathode array according to the present invention. FIG. 2 is a diagram showing an outline of a planar structure of a field emission cold cathode array according to the present invention. FIG. 3 is a diagram showing an example of a preferred method for manufacturing a field emission cold cathode array according to the present invention. FIG. 4 is a view showing a cold cathode array substrate in a step of forming an emitter material layer of the field emission cold cathode array according to the present invention. FIG. 5 is a diagram showing an example of a case where a substrate gap holding member 5 according to the present invention is formed using a jig 601. FIG. 6 is a view showing an example of a jig for manufacturing a field emission type cold cathode array which can be used when forming the substrate gap holding member 5 according to the present invention. FIG. 7 is a diagram showing a planar pattern of a first substrate 11 used in manufacturing a field emission cold cathode array according to a second embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 Emitter material layer 2 Emitter 3 Insulating layer 4 Gate electrode layer 5 Substrate gap holding member 6 Cold cathode array substrate 7 Glass substrate 8 Anode electrode layer 9 Phosphor layer 10 Anode substrate 11 first substrate 12 recess

──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Tomio Ono 1 Kosuka Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Prefecture Toshiba R & D Center Co., Ltd. (72) Inventor Toshiharu Higuchi 72, Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Company Toshiba Horikawacho factory (56) References JP-A-6-36682 (JP, A) JP-A-6-201500 (JP, A) Table 2 JP-A-500065 (JP, A) (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01J 29/87 H01J 1/304 H01J 5/03 H01J 31/12 H01J 9/02

Claims (1)

(57) Claims 1. An emitter material layer in which a plurality of emitters each having a sharp tip are projected in an array form on a main surface, and the emitter material layer is exposed while exposing the tip of the emitter. An insulating layer formed so as to cover the emitter material layer, and an opening is formed so as to cover the insulating layer and expose the tip of the emitter to surround the tip in a non-contact manner. A gate electrode layer, formed on the main surface of the emitter material layer at the gap between the plurality of emitters and from the same material as the emitter material layer, from the main surface of the emitter material layer to the tip of the emitter; A cold cathode array substrate having a substrate gap holding member formed so that the height of the top surface from the main surface of the emitter material layer is higher than the height of the emitter material layer; and an anode electrode formed on the support substrate; The substrate An anode substrate which is joined to the cold cathode array substrate at the top surface in the height direction of the gap holding member and which is opposed to the cold cathode array substrate while holding a gap by the substrate gap holding member. Field emission cold cathode array.