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JP3428720B2 - Optical element molding die - Google Patents
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JP3428720B2 - Optical element molding die - Google Patents

Optical element molding die

Info

Publication number
JP3428720B2
JP3428720B2 JP05581894A JP5581894A JP3428720B2 JP 3428720 B2 JP3428720 B2 JP 3428720B2 JP 05581894 A JP05581894 A JP 05581894A JP 5581894 A JP5581894 A JP 5581894A JP 3428720 B2 JP3428720 B2 JP 3428720B2
Authority
JP
Japan
Prior art keywords
film
layer
mold
optical element
molding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05581894A
Other languages
Japanese (ja)
Other versions
JPH07267655A (en
Inventor
鉄夫 桑原
直 宮崎
正樹 大森
靖行 仲居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP05581894A priority Critical patent/JP3428720B2/en
Publication of JPH07267655A publication Critical patent/JPH07267655A/en
Application granted granted Critical
Publication of JP3428720B2 publication Critical patent/JP3428720B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B11/00Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
    • C03B11/06Construction of plunger or mould
    • C03B11/08Construction of plunger or mould for making solid articles, e.g. lenses
    • C03B11/084Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor
    • C03B11/086Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor of coated dies
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/14Die top coat materials, e.g. materials for the glass-contacting layers
    • C03B2215/16Metals or alloys, e.g. Ni-P, Ni-B, amorphous metals
    • C03B2215/17Metals or alloys, e.g. Ni-P, Ni-B, amorphous metals comprising one or more of the noble meals, i.e. Ag, Au, platinum group metals
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/14Die top coat materials, e.g. materials for the glass-contacting layers
    • C03B2215/24Carbon, e.g. diamond, graphite, amorphous carbon
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/30Intermediate layers, e.g. graded zone of base/top material
    • C03B2215/31Two or more distinct intermediate layers or zones
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/30Intermediate layers, e.g. graded zone of base/top material
    • C03B2215/32Intermediate layers, e.g. graded zone of base/top material of metallic or silicon material
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/30Intermediate layers, e.g. graded zone of base/top material
    • C03B2215/34Intermediate layers, e.g. graded zone of base/top material of ceramic or cermet material, e.g. diamond-like carbon
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Description

【発明の詳細な説明】 【0001】 【産業上の利用分野】本発明は、レンズ、プリズム等の
ガラスよりなる光学素子をガラス素材のプレス成形によ
り製造する場合に使用される成形用型に関するものであ
る。 【0002】 【従来の技術】研磨工程を必要としないで、ガラス素材
のプレス成形によってレンズを製造する技術は、従来の
レンズ製造において必要とされた複雑な工程をなくし、
簡単かつ安価にレンズを製造することを可能とし、今日
レンズのみならずプリズムその他のガラスよりなる光学
素子の製造に使用されるようになった。 【0003】このようなガラスの光学素子のプレス成形
に使用される型材に要求される性質として、耐擦傷性、
耐熱性、離型性、鏡面加工性および成形に適した熱物性
に優れていることが挙げられる。 【0004】従来、この種の型材料として、金属、合
金、セラミックスおよびそれらをコーティングした材料
等、数多くの提案がされている。いくつかの例を挙げる
ならば、特開昭49−51112号公報には13Crマ
ルテンサイト鋼が、特開昭52−45613号公報には
SiCおよびSi34 が、特開昭60−246230
号公報には超硬合金に貴金属を形成した材料が提案され
ている。 【0005】特開昭61−136928号公報には金属
とセラミックスからなる複合材母材に窒化物、炭化物、
酸化物および金属の中間層を介して貴金属を形成した材
料が提案されている。また、特開昭60−81032号
公報にはガラス状カーボン、炭化珪素、サイアロンの型
材が提案されている。更に、近年の薄膜技術の進歩に従
い、特開昭61−183134号公報には超硬合金上に
ダイヤモンドあるいはダイヤモンド状炭素膜を形成して
成形型とした提案がなされている。 【0006】 【発明が解決しようとしている課題】しかしながら、特
開昭49−51112号公報に開示されている13Cr
マルテンサイト鋼は加工性の点で優れているが、耐擦傷
性、耐熱性、離型性が不十分なため良好な型材とはいえ
ない。特開昭52−45613号公報に開示されている
SiCおよびSi34 は耐擦傷性、耐熱性の点で優れ
ているが、加工性、離型性の点で問題がある。また、特
開昭60−81032号公報に開示されているガラス状
カーボンは、離型性の点で優れているが、鏡面性および
素材の強度の点に問題がある。 【0007】以上の様に、型材単一材料では、ガラスの
成形型として要求される性能を十分満足することができ
ず、特開昭60−246230号公報に開示されている
ように、型母材超硬合金に不足している離型性を貴金属
の型表面処理により補っているが、耐擦傷性の点で改善
が必要である。また、特開昭61−183134号公報
に開示されている超硬合金上にダイヤモンドあるいはダ
イヤモンド状炭素膜を形成して離型性を損なわずに耐擦
傷性の改善を試みているが、ダイヤモンド膜は表面粗さ
が大きく、成膜後に鏡面研磨を要することおよびその鏡
面研磨が難しいという問題があり、他方のダイヤモンド
状炭素膜は、高温下でのプレス成形過程において、膜質
変化および応力変化を生じ耐擦傷性低下および型母材と
の密着性低下を示すという欠点があった。 【0008】 【課題を解決するための手段】本発明によれば、成形面
の型母材側から数えて第一層目に金属膜、第二層目に非
晶質あるいは非晶質と結晶質の混在かつ電気抵抗1×1
10Ω以下の窒化物あるいは炭化物あるいは炭窒化物
(SiまたはBとTi、Zr、Hf、V、Nb、Taの
うちの1種類以上の金属との複化合物)を主成分とした
膜、第三層目に第三層目にイオンビーム成膜法により形
成した炭素主成分の膜またはイオンビームアシスト成膜
法により形成した貴金属主成分の膜を離型膜とした構成
にすることにより、鏡面加工性、成形に適した熱物性は
形成プロセスを考慮し選定した型母材にその性能を持た
せ、耐擦傷性および離型性については第三層目の炭素主
成分の膜あるいは貴金属主成分の膜にその性能を持た
せ、第二層目の窒化物あるいは炭化物あるいは炭窒化物
膜で表面硬度をアップかつ繊密高温耐酸化性を付与し合
わせて第三層目のイオンビーム応用成膜時の絶縁破壊に
よるスパーク損傷を防止した表面層構造をとることによ
り、全体として良離型高耐久の成形型を実現した。 【0009】つまり、離型膜である炭素系膜あるいは貴
金属系膜の成形時における剥離防止を目的として高速イ
オンビームにより第二層と第三層の界面にミキシング層
を形成するためには第二層はイオンが流入できる程度の
電気伝導性がなければならない。しかも、第二層は成形
時の高温高圧下で膜質変化および変形を起こさないため
高温下で化学的に安定かつ高硬度が必要なことから窒化
物、炭化物あるいは炭窒化物が適当な材料であることが
考えられる。 【0010】第二層目の膜は緻密であることが望まし
く、通常のイオンプレーティング法あるいはスパッタリ
ング法を用いて成膜した場合、珪素化合物あるいはホウ
素化合物を除いた他の化合物(例えば、TiN,Zr
N,TaN,TiC,ZrC,TaC等)の膜成長が結
晶化した柱状構造を示し、成形時のガラスとの反応劣化
を早める原因になっている。この欠点は、非晶質化元素
のSiあるいはBとTi,Zr,Ta,Hfとの複合窒
化あるいは複合炭化あるいは複合炭窒化膜にすることに
より改善される。 【0011】第1層目の金属膜は10nmから数100
nm形成することにより成形面の表面粗さを損なうこと
なく第二層目の膜の密着性を向上させることができる。 【0012】 【実施例】以下、実施例により本発明を説明する。 [実施例1]図1は本発明の第一の実施例を示し、同図
において1は型母材である超硬合金、2は型母材1の成
形表面に形成した金属膜、3は金属膜2の上に形成した
非晶質あるいは非晶質と結晶質の混合した窒化物、炭化
物、あるいは炭窒化物膜、4は窒化物あるいは炭化物あ
るいは炭窒化物膜3の上に形成したイオンビーム成膜法
により形成した炭素主成分の膜あるいはイオンビームア
シスト成膜法により形成した貴金属主成分の膜である。 【0013】つぎに上記構成の光学素子成形用型の製作
方法について述べる。型母材である超硬合金を所定の型
形状に加工し、成形面を鏡面研磨して表面粗さを0.0
2μm以下にして型母材1とした。 【0014】この型母材1を清浄化しZrとSiの2元
蒸着可能なイオンプレーティング成膜装置の基板ホルダ
ーにセットし、1×10-3Pa迄真空排気した後、Ar
ガスを0.5Paの真空度迄導入し、基板ホルダーに5
00Wの高周波電力を印加して高周波放電を起こし型成
膜面のクリーニングを3分間行った。その後、電子銃ハ
ース近傍にセットされているイオン化電極に+40Vの
電圧を印加し、基板ホルダーに基板バイアス電圧−10
0Vを印加した状態でZr金属を0.05μm電子線蒸
着し、金属膜2とした。膜厚は水晶振動子膜厚計を用い
て制御した。 【0015】更に、イオン化条件を保持したままN2
スを5×10-2Paの真空度迄導入し、ZrとSiを同
時に蒸発させてZrSiNの複窒化膜3を1μm厚さ形
成した。この膜の表面抵抗を図2に示す3mm角のAl
電極を10mm隔てて蒸着し、測定した結果、5×10
9 Ωであった。また、X線回折による結晶性評価の結果
から、図3、図4に示す通り非晶質化していることが確
認された。 【0016】このイオンプレーティングにより硬質膜3
迄成膜した成形型の成形面に離型膜4を形成するため、
イオンビーム成膜装置の基板ホルダーに成形型をセット
し1×10-3Pa迄真空排気し、ECR放電イオンガン
中にArガスを10sccm導入してマイクロ波電力5
00W、プラズマ制御用マグネット電力1kW、イオン
加速電圧2kV、基板バイアス電圧−300V、イオン
流密度0.1mA/cm2 の条件で成膜面のクリーニン
グを3分間行い、次に、イオンガンへの導入ガスをCH
4 とH2 に換え、その流量を各々10sccmと20s
ccmとして、マイクロ波電力500W、プラズマ制御
用マグネット電力1kW、イオン加速電圧9kV、基板
バイアス電圧−500V、イオン流密度0.5mA/c
2 、成膜時間15分の処理条件により、炭素の主成分
とし硬質膜3の元素成分と水素を含んだ離型膜4を膜厚
約50nm形成して成形型5とした。 【0017】次に本発明の成形型を用いた光学素子の成
形例について述べる。レンズ成形用素材として、SK1
2(屈折率 nd=1.58313、νd=59.4、
Tg=550℃、At=588℃)の所定近似球状ゴブ
を用いた。このゴブを不図示の窒素ガス雰囲気大気圧で
作動させる成形機の成形室に真空置換を経て挿入し、上
記記載の本発明の成形用型内で加熱し、所定温度に達し
てから100kg/cm2 の圧力で2分間加圧する。圧
力を除去した後、20℃/min.の冷却速度でガラス
転移点以下になる迄冷却し、成形用型から成形レンズを
あらかじめ300℃程度に加熱してあるレンズ受けに移
して、200℃程度迄レンズが冷却してから真空置換を
経て大気中に取り出す。 【0018】上記の工程を繰り返して型の成形面の劣化
状態及び成形レンズの表面状態について調べた結果、成
形レンズの表面は表面粗さの劣化がなくクモリのない良
好な状態であり、離型膜中の酸素含有率の多少の上昇は
認められたが、炭素成分の減少は非常に少なく型成形面
の劣化が少ないことを確認した。このことは、第二層目
の硬質膜の緻密化非晶質化による膜粒界からの酸化侵攻
防止効果と考えられる。 【0019】本成形例は、比較的安定性の高いSKガラ
スについて述べたが、他の硝材例えばLaK12(nd
=1.6790、νd=55.3、Tg=554℃、A
t=596℃)を成形した場合も、同様の効果が得られ
る。 【0020】[実施例2]実施例1と異なる成膜法によ
る第二の実施例を示す。 【0021】型母材を清浄化しTaターゲットとSiタ
ーゲットを備えた高周波マグネトロンスパッタリング装
置の基板ホルダーにセットし、1×10-3Pa迄真空排
気した後、Arガスを0.4Paの真空度迄導入し、基
板ホルダーに500Wの高周波電力を供給して高周波放
電中で5分間型母材1の成形面をクリーニングした後、
Taターゲットに1.5kWの高周波電力、基板ホルダ
ーに−100Vの直流バイアス電圧を供給して型母材1
の成形面にTa金属膜2を0.1μm厚さ形成し、その
後、Taのスパッタ条件を維持しながらN2 ガスを5s
ccm導入して真空度を0.45Paにし、Siターゲ
ットに500Wの高周波電力を供給することによりTa
SiNの複窒化膜3を約1μm形成した。 【0022】この複窒化膜3迄形成した成形型の最表面
に炭素を主成分とした離型膜4を形成する方法は実施例
1と同様である。 【0023】[実施例3]実施例1と同様の方法で型母
材1の形成面に第一層目のZr金属膜2と第二層目の複
窒化膜(硬質膜)3を形成し、その後、高速イオンガン
を備えたイオンプレーティング成膜装置を用いて貴金属
を主成分とした離型膜4を形成する方法について述べ
る。 【0024】硬質膜3迄を形成した成形型をイオンプレ
ーティング装置内の基板ホルダーにセットし1×10-3
Paの真空度迄排気した後、イオンガンにArガスを1
0sccm導入し、マイクロ波電力500W、プラズマ
制御用マグネット電力1kWを供給してECR放電を開
始した後、加速電圧2kV、基板バイアス−300Vを
印加して、Arイオンによるクリーニングを3分間行っ
た後、Arイオン照射条件を維持しながら電子線蒸着に
より白金膜を形成して離型膜4とした。白金蒸着時の電
子銃の条件、加速電圧9kV、エミッション電流300
mA、SCANメモリ1、成膜時間10分のとき膜厚は
100nmであった。 【0025】 【0026】 【0027】 【0028】 【0029】 【発明の効果】以上説明したように、所定の形状に加工
した型母材の成形面に型母材側から数えて第一層目に、
第二層目の硬質膜と型母材との密着性を改善するための
金属の薄膜、第二層目に、緻密かつ高温耐酸化性が高く
第三層目のイオンビーム応用成膜でチャージアップ防止
するための非晶質あるいは非晶質と結晶質の混合した電
気伝導性のある窒化物膜あるいは炭化物膜あるいは炭窒
化物膜である硬質膜、第三層目に、膜剥離防止のために
第二層へのミキシングを実現するイオンビーム成膜法に
よる炭素を主成分とした離型膜あるいはイオンビームア
シスト成膜法による貴金属を主成分とした離型膜で構成
される成形型により、光学素子成形用型が得られ、この
成形用型を用いて光学素子とすることにより、安定した
離型性を保って外観の良好な成形品を得ることができ、
成形装置の稼動率向上および良品率の向上により低減の
効果があった。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a molding die used when an optical element made of glass such as a lens or a prism is manufactured by press-molding a glass material. It is. 2. Description of the Related Art A technique of manufacturing a lens by pressing a glass material without a polishing step eliminates the complicated steps required in the conventional lens manufacturing.
It has made it possible to manufacture lenses easily and inexpensively, and nowadays it is used not only for manufacturing lenses but also for manufacturing optical elements made of prisms and other glasses. [0003] The properties required of a mold used for press molding of such a glass optical element include scratch resistance,
It is excellent in heat resistance, mold release properties, mirror workability and thermophysical properties suitable for molding. Conventionally, many proposals have been made for this type of mold material, such as metals, alloys, ceramics, and materials coated with them. If some examples, JP 49-51112 Patent 13Cr martensitic steels in Publication, Japanese Patent Publication No. Sho 52-45613 is SiC and Si 3 N 4, JP 60-246230
In the publication, a material in which a noble metal is formed on a hard metal is proposed. [0005] Japanese Patent Application Laid-Open No. 61-13628 discloses a composite base material composed of a metal and a ceramic, in which a nitride, a carbide,
A material in which a noble metal is formed via an intermediate layer of an oxide and a metal has been proposed. Also, Japanese Patent Application Laid-Open No. 60-81032 proposes a mold material of glassy carbon, silicon carbide, and sialon. Further, in accordance with recent advances in thin film technology, Japanese Patent Application Laid-Open No. 61-183134 proposes forming a diamond or diamond-like carbon film on a cemented carbide to form a mold. [0006] However, 13Cr disclosed in Japanese Patent Application Laid-Open No. 49-51112 has a problem.
Although martensitic steel is excellent in workability, it cannot be said to be a good mold material due to insufficient scratch resistance, heat resistance, and releasability. SiC and Si 3 N 4 disclosed in JP-A-52-45613 are excellent in abrasion resistance and heat resistance, but have problems in workability and mold release. Further, the glassy carbon disclosed in Japanese Patent Application Laid-Open No. Sho 60-81032 is excellent in terms of releasability, but has problems in terms of specularity and strength of the material. As described above, a single mold material cannot sufficiently satisfy the performance required as a glass mold, and as disclosed in Japanese Patent Application Laid-Open No. The releasability, which is insufficient for the cemented carbide, is compensated for by the surface treatment of the noble metal, but it needs to be improved in terms of scratch resistance. Also, an attempt has been made to improve the scratch resistance without impairing the releasability by forming a diamond or diamond-like carbon film on a cemented carbide disclosed in JP-A-61-183134. Has a problem that the surface roughness is large, mirror polishing is required after film formation, and the mirror polishing is difficult.On the other hand, the diamond-like carbon film undergoes film quality change and stress change during the press forming process at high temperature. There is a drawback in that abrasion resistance is reduced and adhesion to a mold base material is reduced. According to the present invention, a metal film is used as a first layer, and an amorphous or amorphous crystal is used as a second layer, counting from a mold base material side of a molding surface. Mixed quality and electric resistance 1 × 1
0 10 Omega following nitride or carbide or carbonitride composed mainly of (Si or B and Ti, Zr, Hf, V, Nb, 1 or more double compound of a metal of Ta) membrane, the The third layer is formed by ion beam deposition on the third layer
Membrane or an ion beam assisted deposition of forms carbon main component
By forming the predominant metal main component film formed by the method as a release film, mirror workability and thermophysical properties suitable for molding are given to the mold base material selected in consideration of the forming process, For the abrasion and release properties, the third layer of carbon-based film or precious metal-based film has its performance, and the second layer of nitride, carbide or carbonitride film increases the surface hardness. In addition, by providing a high-density high-temperature oxidation resistance and by taking a surface layer structure that prevents spark damage due to dielectric breakdown during ion beam application deposition of the third layer, a mold with good mold release and high durability as a whole Was realized. In other words, in order to form a mixing layer at the interface between the second layer and the third layer by a high-speed ion beam for the purpose of preventing peeling during the formation of a carbon-based film or a noble metal-based film as a release film, The layer must be electrically conductive enough to allow ions to enter. In addition, since the second layer does not undergo film quality change and deformation under high temperature and high pressure during molding, it is necessary to be chemically stable and high hardness under high temperature. Therefore, nitride, carbide or carbonitride is an appropriate material. It is possible. It is desirable that the second layer is dense. When the second layer is formed by a usual ion plating method or sputtering method, other compounds excluding a silicon compound or a boron compound (for example, TiN, Zr
(N, TaN, TiC, ZrC, TaC, etc.) shows a crystallized columnar structure, which hasten the reaction deterioration with glass at the time of molding. This disadvantage can be remedied by forming a composite nitrided or composite carbonized or carbonitrided film of Si or B as an amorphizing element and Ti, Zr, Ta or Hf. The first metal film has a thickness of 10 nm to several hundreds.
By forming the layer in nm, the adhesion of the second layer film can be improved without impairing the surface roughness of the molding surface. Hereinafter, the present invention will be described by way of examples. Embodiment 1 FIG. 1 shows a first embodiment of the present invention, in which 1 is a cemented carbide as a mold base material, 2 is a metal film formed on the molding surface of the mold base material 1, and 3 is An amorphous or mixed amorphous and crystalline nitride, carbide, or carbonitride film formed on the metal film 2, and ions formed on the nitride, carbide, or carbonitride film 3 are formed on the metal film 2. A film mainly composed of carbon formed by a beam film forming method or a film mainly composed of a noble metal formed by an ion beam assisted film forming method. Next, a method of manufacturing the optical element molding die having the above-described configuration will be described. A cemented carbide as a mold base material is processed into a predetermined mold shape, and the formed surface is mirror-polished to a surface roughness of 0.0
The mold base material 1 was made 2 μm or less. The mold base material 1 is cleaned, set on a substrate holder of an ion plating film forming apparatus capable of dual deposition of Zr and Si, evacuated to 1 × 10 −3 Pa, and then Ar
Gas is introduced to a vacuum of 0.5 Pa, and 5
A high-frequency power of 00 W was applied to cause a high-frequency discharge to clean the mold-formed surface for 3 minutes. Thereafter, a voltage of +40 V is applied to the ionization electrode set near the electron gun hearth, and a substrate bias voltage of -10 is applied to the substrate holder.
In a state where 0 V was applied, Zr metal was subjected to electron beam evaporation at 0.05 μm to form a metal film 2. The film thickness was controlled using a quartz crystal film thickness meter. Further, while maintaining the ionization conditions, N 2 gas was introduced to a degree of vacuum of 5 × 10 −2 Pa, and Zr and Si were simultaneously evaporated to form a ZrSiN double nitride film 3 having a thickness of 1 μm. The surface resistance of this film was set to 3 mm square Al shown in FIG.
The electrodes were deposited at a distance of 10 mm, and the measurement results showed that 5 × 10
9 Ω. Further, from the result of the evaluation of the crystallinity by X-ray diffraction, it was confirmed that the film was made amorphous as shown in FIGS. The hard film 3 is formed by this ion plating.
In order to form the release film 4 on the molding surface of the molding die
The mold was set on the substrate holder of the ion beam film forming apparatus, evacuated to 1 × 10 −3 Pa, and Ar gas was introduced into the ECR discharge ion gun at 10 sccm to generate microwave power of 5 μm.
The cleaning of the film formation surface was performed for 3 minutes under the conditions of 00 W, magnet power for plasma control of 1 kW, ion acceleration voltage of 2 kV, substrate bias voltage of −300 V, and ion current density of 0.1 mA / cm 2 , and then gas introduced into the ion gun To CH
4 and H 2 , and the flow rates were 10 sccm and 20 s, respectively.
As ccm, microwave power 500 W, plasma control magnet power 1 kW, ion acceleration voltage 9 kV, substrate bias voltage -500 V, ion current density 0.5 mA / c
Under a processing condition of m 2 and a deposition time of 15 minutes, a mold release film 4 having a thickness of about 50 nm was formed as a main component of carbon and an element component of the hard film 3 and hydrogen. Next, an example of molding an optical element using the mold of the present invention will be described. SK1 as a lens molding material
2 (refractive index nd = 1.58313, vd = 59.4,
A predetermined approximate spherical gob (Tg = 550 ° C., At = 588 ° C.) was used. This gob is inserted into a molding chamber of a molding machine operated at an atmospheric pressure of nitrogen gas (not shown) via vacuum substitution, and heated in the molding die of the present invention described above, and after reaching a predetermined temperature, 100 kg / cm. pressurized two minutes with 2 pressure. After the pressure was removed, the pressure was reduced to 20 ° C / min. After cooling at a cooling rate of not more than the glass transition point, the molded lens is transferred from the molding die to a lens receiver which has been previously heated to about 300 ° C., and the lens is cooled to about 200 ° C., and then subjected to vacuum replacement. Remove to atmosphere. As a result of repeating the above steps and examining the state of deterioration of the molding surface of the mold and the state of the surface of the molded lens, the surface of the molded lens is in a good state without surface roughness deterioration and without clouding. Although a slight increase in the oxygen content in the film was observed, it was confirmed that the decrease in the carbon component was very small and the deterioration of the molded surface was small. This is considered to be an effect of preventing oxidation invasion from film grain boundaries due to densification and amorphization of the second hard film. In the present molding example, SK glass having relatively high stability has been described, but other glass materials such as LaK12 (nd)
= 1.6790, νd = 55.3, Tg = 554 ° C., A
(t = 596 ° C.), the same effect can be obtained. [Embodiment 2] A second embodiment using a film forming method different from that of Embodiment 1 will be described. The mold base material is cleaned, set on a substrate holder of a high-frequency magnetron sputtering apparatus provided with a Ta target and a Si target, evacuated to 1 × 10 −3 Pa, and then Ar gas is reduced to a vacuum of 0.4 Pa. After introducing the substrate holder and supplying high-frequency power of 500 W to the substrate holder and cleaning the molding surface of the mold base material 1 for 5 minutes in high-frequency discharge,
A high-frequency power of 1.5 kW is supplied to the Ta target, and a DC bias voltage of -100 V is supplied to the substrate holder, so that the mold base material 1 is formed.
Then, a Ta metal film 2 is formed to a thickness of 0.1 μm on the molding surface of, and then N 2 gas is supplied for 5 seconds while maintaining Ta sputtering conditions.
Ccm is introduced, the degree of vacuum is set to 0.45 Pa, and high-frequency power of 500 W is supplied to the Si target to obtain Ta.
A multiple nitride film 3 of SiN was formed to about 1 μm. The method of forming the release film 4 containing carbon as a main component on the outermost surface of the forming die formed up to the double nitride film 3 is the same as that of the first embodiment. [Embodiment 3] A Zr metal film 2 as a first layer and a double nitride film (hard film) 3 as a second layer are formed on the surface of the mold base material 1 in the same manner as in the embodiment 1. Then, a method of forming the release film 4 containing a noble metal as a main component using an ion plating film forming apparatus equipped with a high-speed ion gun will be described. The mold having the hard film 3 formed thereon is set on a substrate holder in an ion plating apparatus, and is set to 1 × 10 -3.
After evacuating to a vacuum degree of Pa, Ar gas was
After introducing 0 sccm and supplying microwave power of 500 W and magnet power for plasma control of 1 kW to start ECR discharge, an acceleration voltage of 2 kV and a substrate bias of −300 V were applied, and cleaning with Ar ions was performed for 3 minutes. A release film 4 was formed by forming a platinum film by electron beam evaporation while maintaining Ar ion irradiation conditions. Electron gun conditions during platinum deposition, acceleration voltage 9 kV, emission current 300
The film thickness was 100 nm when the mA, the SCAN memory 1 and the film formation time were 10 minutes. As described above, the first layer counted from the mold base material side on the molding surface of the mold base material processed into a predetermined shape as described above. To
Metal thin film for improving the adhesion between the second hard film and the mold base material. The second layer is dense and has high oxidation resistance at high temperature and is charged by the third layer ion beam application deposition. Hard film that is an amorphous or mixed amorphous and crystalline electrically conductive nitride film or carbide film or carbonitride film to prevent film up. In addition, a mold composed of a release film mainly composed of carbon by an ion beam deposition method for realizing mixing to the second layer or a release film mainly composed of a noble metal by an ion beam assisted film formation method, An optical element molding die is obtained, and by using this molding die as an optical element, it is possible to obtain a molded article having a good appearance while maintaining stable release properties,
There was an effect of reduction by improving the operation rate of the molding device and the non-defective product rate.

【図面の簡単な説明】 【図1】本発明の光学素子成形用型の成形面膜構成を模
式的に示した図である。 【図2】膜の表面抵抗測定法を模式的に示した図であ
る。 【図3】イオンプレーティングZrN膜のX線回折測図
である。 【図4】イオンプレーティングZrSiN膜のX線回折
図である。 【符合の説明】 1 型母材 2 第1層目の金属膜 3 第2層目の硬質膜 4 第3層目の離型膜 5 型
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram schematically showing a configuration of a molding surface film of an optical element molding die of the present invention. FIG. 2 is a diagram schematically showing a method of measuring the surface resistance of a film. FIG. 3 is an X-ray diffraction diagram of an ion-plated ZrN film. FIG. 4 is an X-ray diffraction diagram of an ion-plated ZrSiN film. [Description of References] 1 type base material 2 1st layer metal film 3 2nd layer hard film 4 3rd layer release film 5 type

───────────────────────────────────────────────────── フロントページの続き (72)発明者 仲居 靖行 東京都大田区下丸子3丁目30番2号 キ ヤノン株式会社内 (56)参考文献 特開 平3−153535(JP,A) 特開 平6−72728(JP,A) 特開 平1−153542(JP,A) 特開 昭61−136928(JP,A) 特開 平5−178628(JP,A) (58)調査した分野(Int.Cl.7,DB名) C03B 11/00 C03B 40/02 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuyuki Nakai 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-3-153535 (JP, A) JP-A Heihei 6-72728 (JP, A) JP-A-1-153542 (JP, A) JP-A-61-136928 (JP, A) JP-A-5-178628 (JP, A) (58) Fields investigated (Int. Cl. 7, DB name) C03B 11/00 C03B 40/02

Claims (1)

(57)【特許請求の範囲】 【請求項1】 少なくとも成形面に、型母材側から第一
層目に金属膜、第二層目に窒化物、炭化物または炭窒化
物を主成分とした硬質膜、第三層目にイオンビーム成膜
法により形成した炭素主成分の膜またはイオンビームア
シスト成膜法により形成した貴金属主成分の膜を被覆し
た光学素子成形用型において、第二層目の硬質膜を形成
する窒化物、炭化物及び炭窒化物が、SiまたはBとT
i、Zr、Hf、V、Nb、Taのうちの1種類以上の
金属との複化合物であり、かつ非晶質もしくは非晶質と
結晶質が混在し、かつ電気伝導性があることを特徴とす
る光学素子成形用型。
(57) [Claims 1] At least on a molding surface, a metal film as a first layer and a nitride, carbide or carbonitride as a main component in a second layer from a mold base material side. Hard film, 3rd layer ion beam deposition
Membrane or ion beam A carbon main component formed by the law
In an optical element molding die coated with a film of a noble metal main component formed by a cyst film forming method , the nitride, carbide and carbonitride forming the second hard film are Si or B and T
It is a complex compound of at least one of i, Zr, Hf, V, Nb, and Ta, and is characterized by being amorphous or a mixture of amorphous and crystalline and having electric conductivity. Mold for forming an optical element.
JP05581894A 1994-03-25 1994-03-25 Optical element molding die Expired - Fee Related JP3428720B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05581894A JP3428720B2 (en) 1994-03-25 1994-03-25 Optical element molding die

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05581894A JP3428720B2 (en) 1994-03-25 1994-03-25 Optical element molding die

Publications (2)

Publication Number Publication Date
JPH07267655A JPH07267655A (en) 1995-10-17
JP3428720B2 true JP3428720B2 (en) 2003-07-22

Family

ID=13009536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05581894A Expired - Fee Related JP3428720B2 (en) 1994-03-25 1994-03-25 Optical element molding die

Country Status (1)

Country Link
JP (1) JP3428720B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003095669A (en) * 2001-09-26 2003-04-03 Olympus Optical Co Ltd Mold for molding optical element

Also Published As

Publication number Publication date
JPH07267655A (en) 1995-10-17

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