JP3433658B2 - Method of preventing pellicle film deterioration in lithography - Google Patents
Method of preventing pellicle film deterioration in lithographyInfo
- Publication number
- JP3433658B2 JP3433658B2 JP32176097A JP32176097A JP3433658B2 JP 3433658 B2 JP3433658 B2 JP 3433658B2 JP 32176097 A JP32176097 A JP 32176097A JP 32176097 A JP32176097 A JP 32176097A JP 3433658 B2 JP3433658 B2 JP 3433658B2
- Authority
- JP
- Japan
- Prior art keywords
- pellicle
- exposure
- pellicle film
- light
- lithography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000006866 deterioration Effects 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 16
- 238000001459 lithography Methods 0.000 title claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 239000011261 inert gas Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 11
- 229920002313 fluoropolymer Polymers 0.000 claims description 8
- 239000004811 fluoropolymer Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000002265 prevention Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 36
- 239000007789 gas Substances 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DQEFEBPAPFSJLV-UHFFFAOYSA-N Cellulose propionate Chemical compound CCC(=O)OCC1OC(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C1OC1C(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C(COC(=O)CC)O1 DQEFEBPAPFSJLV-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229920006218 cellulose propionate Polymers 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical group FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明はＩＣ、ＬＳＩ等の半
導体素子や液晶表示素子等のパターニングのためのリソ
グラフィ工程、特にフォトマスク防護用ペリクルを通し
て露光を行うリソグラフィ工程のペリクル膜の劣化防止
方法に関するものである。TECHNICAL FIELD The present invention relates to IC, as lithography Engineering for patterning of semiconductor devices and liquid crystal display devices such as LSI, particularly preventing deterioration of the pellicle film of the lithographic step of performing exposure through a photomask protective pellicle
It is about the method .
【０００２】[0002]
【従来の技術】フォトリソグラフィ工程では、ガラス板
表面にクロム等の蒸着膜で回路パターンを形成したマス
ク等を使用し、その回路パターンをレジストを塗布した
シリコンウエハー上に転写する作業が行われている。こ
の工程ではマスク等上の回路パターンに塵埃等の異物が
付着した状態で露光が行われると、ウエハー上にも上記
異物が転写され、不良製品となる。ことに前記露光をス
テッパーで行う場合には、ウエハー上に形成される全て
のチップが不良となる可能性が高くなり、マスク等の回
路パターンへの異物の付着は大きな問題である。2. Description of the Related Art In a photolithography process, a mask or the like having a circuit pattern formed on a glass plate surface by a vapor deposition film of chromium or the like is used to transfer the circuit pattern onto a resist-coated silicon wafer. There is. In this step, when exposure is performed with foreign matter such as dust attached to the circuit pattern on the mask or the like, the foreign matter is also transferred onto the wafer, resulting in a defective product. In particular, when the exposure is performed by a stepper, there is a high possibility that all chips formed on the wafer will be defective, and adhesion of foreign matter to a circuit pattern such as a mask is a serious problem.
【０００３】この問題を解消するため、マスク基板の片
面または両面に透明な光線透過性膜を適当な間隔を置い
て配置する防塵用のペリクルが使用されている。このペ
リクルは、一般にアルミニウム製保持枠としてのペリク
ル枠の一側面に透明な光線透過性のペリクル膜を張設し
たもので、ペリクル枠の片側端面に粘着剤を塗布してマ
スク基板上に取付けられるようになっている。このペリ
クルを使用することにより、外部からの異物の侵入を防
ぐことができ、また仮にペリクル膜上に異物が付着して
もウエハー上には転写されず、半導体素子等の製造時の
歩留りが向上する。In order to solve this problem, a dust-proof pellicle has been used in which transparent light-transmissive films are arranged on one or both sides of a mask substrate at appropriate intervals. In this pellicle, a transparent light-transmissive pellicle film is stretched on one side surface of a pellicle frame, which is generally an aluminum holding frame. An adhesive agent is applied to one end surface of the pellicle frame to be mounted on a mask substrate. It is like this. By using this pellicle, it is possible to prevent foreign matter from entering from the outside, and even if foreign matter adheres to the pellicle film, it will not be transferred onto the wafer, improving the yield during manufacturing of semiconductor devices and the like. To do.
【０００４】ペリクル膜としては、ニトロセルロース、
プロピオン酸セルロース、含フッ素重合体等の高光線透
過等の薄膜を用いたものが多く使用されている。As the pellicle film, nitrocellulose,
Those using thin films of high light transmission such as cellulose propionate and fluoropolymers are often used.
【０００５】ところで露光に使用する光線は半導体素子
や液晶素子の高集積化によるパターンの微細化のため、
ｇ線（波長４３６ｎｍ）、ｉ線（３６５ｎｍ）からＫｒ
Ｆエキシマレーザ光（２４８ｎｍ）へと短波長化し、さ
らに真空紫外域の光線（２００ｎｍ以下）の使用が検討
されており、中でもＡｒＦエキシマレーザ光（１９３ｎ
ｍ）が最有力視されている。このように露光用の光線が
短波長化すると、その光線の持つエネルギーも高くな
り、ペリクル膜が劣化しやすくなるため、劣化の少ない
ペリクル膜として含フッ素重合体製の薄膜を用いること
が検討されている。By the way, the light rays used for exposure are made finer in pattern due to high integration of semiconductor elements and liquid crystal elements.
Kr from g-line (wavelength 436 nm), i-line (365 nm)
The wavelength of the F excimer laser light (248 nm) is shortened, and the use of light in the vacuum ultraviolet region (200 nm or less) is under study. Among them, ArF excimer laser light (193n
m) is regarded as the most influential. When the wavelength of the light beam for exposure is shortened in this way, the energy of the light beam also becomes high, and the pellicle film easily deteriorates.Therefore, it is considered to use a thin film made of a fluoropolymer as a pellicle film with less deterioration. ing.
【０００６】一方、真空紫外域の光線は空気中では吸収
による減衰が起こる。これは酸素による吸収によるもの
で、ＡｒＦエキシマレーザの場合、空気中で１ｍあた
り、１５％の減衰率となる。一般にこのようなレーザ光
はレーザ発振器から露光室に導き、複数のミラーを介し
て露光系に導くため、光路は長くその減衰は大きくな
る。このため露光を不活性ガス雰囲気、特に窒素ガス雰
囲気中で行うことが有力視されている。On the other hand, rays in the vacuum ultraviolet region are attenuated by absorption in the air. This is due to absorption by oxygen, and in the case of the ArF excimer laser, the attenuation rate is 15% per meter in air. Generally, such a laser beam is guided from the laser oscillator to the exposure chamber and is guided to the exposure system via a plurality of mirrors, so that the optical path is long and the attenuation thereof is large. Therefore, it is considered promising to carry out the exposure in an inert gas atmosphere, particularly a nitrogen gas atmosphere.
【０００７】ところが真空紫外域の光線を用いて露光を
行うと、ペリクル膜として含フッ素重合体を用いる場合
でもペリクル膜の劣化が著しく、膜厚が減少して光線透
過率を安定に保つことができないという問題点がある。However, when exposure is performed using light in the vacuum ultraviolet region, the pellicle film is significantly deteriorated even when a fluorine-containing polymer is used as the pellicle film, and the film thickness is reduced to keep the light transmittance stable. There is a problem that you cannot do it.
【０００８】[0008]
【発明が解決しようとする課題】本発明の課題は、真空
紫外域の光により露光を行ってもペリクル膜の劣化が少
ないリソグラフィにおけるペリクル膜の劣化防止方法を
提案することである。SUMMARY OF THE INVENTION An object of the present invention is to propose a method for preventing deterioration of a pellicle film in lithography in which the deterioration of the pellicle film is small even when exposed to light in the vacuum ultraviolet region.
【０００９】[0009]
【課題を解決するための手段】本発明は次のリソグラフ
ィにおけるペリクル膜の劣化防止方法である。
（１） 波長２００ｎｍ以下の真空紫外域の光線を露光
に用いるリソグラフィ工程においてフォトマスクを防護
するペリクルを通して露光を行う際、０．０３容量％以
上の酸素を含有する不活性ガス雰囲気で露光を行うこと
を特徴とするリソグラフィにおけるペリクル膜の劣化防
止方法。
（２） 不活性ガス中の酸素含有量が０．０３〜１５容
量％である上記（１）記載の方法。
（３） 不活性ガスが窒素である上記（１）または
（２）記載の方法。
（４） ペリクルが含フッ素重合体から構成される上記
（１）ないし（３）のいずれかに記載の方法。The present invention is a method for preventing deterioration of a pellicle film in the next lithography. (1) When exposure is performed through a pellicle that protects a photomask in a lithography process that uses a vacuum ultraviolet ray having a wavelength of 200 nm or less for exposure, the exposure is performed in an inert gas atmosphere containing 0.03% by volume or more of oxygen. Which is characterized by preventing deterioration of the pellicle film in lithography.
How to stop . (2) The method according to (1) above, wherein the oxygen content in the inert gas is 0.03 to 15% by volume. (3) The method according to (1) or (2) above, wherein the inert gas is nitrogen. (4) The method according to any one of (1) to (3) above, wherein the pellicle is composed of a fluoropolymer.
【００１０】本発明において、ペリクル膜の材質として
は、含フッ素重合体が用いられる。含フッ素重合体とし
ては、下記式〔１〕ないし〔５〕で表わされる構造単位
からなる群から選ばれる１種または２種以上の構造単位
を有する重合体もしくは共重合体、または式〔１〕ない
し〔５〕で表わされる構造単位と式〔６〕で表わされる
構造単位を有する共重合体、あるいは式〔６〕中Ａがフ
ッ素原子である構造単位とＡが−ＣＦ3である構造単位
を有する共重合体（一般名：ＦＥＰ）が好ましい。In the present invention, a fluoropolymer is used as the material of the pellicle film. As the fluoropolymer, a polymer or copolymer having one or more structural units selected from the group consisting of structural units represented by the following formulas [1] to [5], or the formula [1] copolymer having a structural unit represented by to that (5) a structural unit of the formula (6) represented by, or medium a formula [6] is a structural unit and a is a fluorine atom structural units is -CF 3 The copolymer (generic name: FEP) having is preferable.
【００１１】[0011]
【化１】
（式中、Ａはフッ素原子、−ＣＦ3、−ＯＣＦ2ＣＦ2Ｃ
Ｆ3または−ＯＣＦ2ＣＦ（ＣＦ3）ＯＣＦ2ＣＦ2ＳＯ2Ｆ
を示す。）[Chemical 1] (In the formula, A fluorine atom, -CF 3, -OCF 2 CF 2 C
F 3 or -OCF 2 CF (CF 3) OCF 2 CF 2 SO 2 F
Indicates. )
【００１２】これらの中では、テトラフルオロエチレン
と環状パーフルオロエーテル基を有する含フッ素モノマ
ーとの共重合体や、フッ素と水素原子のみからなる重合
体が好ましい。このような含フッ素重合体としては市販
品を使用することができ、例えば下記式〔７〕で示され
るサイトップ（旭硝子（株）製、商品名）、および式
〔２〕で示されるテフロンＡＦ（米国デュポン社製、商
品名）などがあげられる。Of these, a copolymer of tetrafluoroethylene and a fluorine-containing monomer having a cyclic perfluoroether group, or a polymer composed of only fluorine and hydrogen atoms is preferable. As such a fluoropolymer, a commercially available product can be used. For example, CYTOP (trade name, manufactured by Asahi Glass Co., Ltd.) represented by the following formula [7] and Teflon AF represented by the formula [2]. (Made by DuPont, USA).
【化２】 （式中、ｍ、ｎは正の整数である。）[Chemical 2] (In the formula, m and n are positive integers.)
【００１３】ペリクルとしては上記のようなペリクル膜
を、アルミニウム等の保持枠に張ったものが使用され
る。ペリクル膜を構成する高光透過性の薄膜の厚さは
０．１〜１０μｍ、好ましくは０．２〜５μｍとするの
が好ましい。このようなペリクルは保持枠の端面に粘着
剤を塗布してマスク基板の片面または両面に取付けて使
用される。As the pellicle, a pellicle film as described above, which is stretched on a holding frame made of aluminum or the like, is used. The thickness of the high light-transmitting thin film forming the pellicle film is preferably 0.1 to 10 μm, and more preferably 0.2 to 5 μm. Such a pellicle is used by applying an adhesive to the end surface of the holding frame and attaching it to one side or both sides of the mask substrate.
【００１４】露光に使用される光線は、真空紫外域の光
線（波長２００ｎｍ以下）、例えばＡｒＦエキシマレー
ザ光（１９３ｎｍ）が適している。The light used for the exposure is preferably a light in the vacuum ultraviolet region (wavelength of 200 nm or less), for example, ArF excimer laser light (193 nm).
【００１５】本発明のペリクル膜の劣化防止方法は上記
のような短波長の光線を用いて露光を行う際、０．０３
容量％以上、好ましくは０．０３〜１５容量％、さらに
好ましくは０．０５〜７．５容量％、最も好ましくは
０．５〜３容量％の酸素を含有する不活性ガス雰囲気で
露光を行う。不活性ガスとしては、窒素、アルゴン、ネ
オン等があげられるが窒素が好ましい。The method for preventing the deterioration of the pellicle film of the present invention is 0.03 when the exposure is performed by using the light beam having the short wavelength as described above.
Exposure is carried out in an inert gas atmosphere containing oxygen in an amount of at least 0.03% by volume, preferably 0.03 to 15% by volume, more preferably 0.05 to 7.5% by volume, and most preferably 0.5 to 3% by volume. . Examples of the inert gas include nitrogen, argon and neon, and nitrogen is preferable.
【００１６】上記の酸素含有量の下限はペリクル膜の劣
化度により決まり、上記下限値より低い場合はペリクル
膜の劣化度が大きく、膜厚の減少が激しくなる。酸素含
有量の上限は光線減衰率により決まり、酸素含有率１５
容量％におけるＡｒＦエキシマレーザ光の１ｍあたりの
減衰率は１０％、酸素含有率７．５容量％における減衰
率は５％、空気程度の２２容量％の酸素含有量では１５
％となる。従って光線減衰率が問題にならなければ空気
程度の２２容量％の酸素含有率でも使用可能である。The lower limit of the oxygen content is determined by the degree of deterioration of the pellicle film, and when the oxygen content is lower than the lower limit, the degree of deterioration of the pellicle film is large and the decrease in film thickness becomes severe. The upper limit of the oxygen content is determined by the light attenuation rate, and the oxygen content is 15
The attenuation rate per 1 m of the ArF excimer laser light at a capacity% is 10%, the attenuation rate at an oxygen content rate of 7.5% by volume is 5%, and the oxygen content is about 15% at an oxygen content of about 22% by volume.
%. Therefore, if the light attenuation rate does not matter, an oxygen content rate of about 22% by volume, which is about the same as air, can be used.
【００１７】このような不活性ガス雰囲気で露光を行う
ためには、密閉構造の露光室に露光装置を設置して大気
を上記不活性ガスで置換し、ペリクルを取付けたフォト
マスクを通して予め露光室に搬入したウェハー等の被露
光体に露光を行う。不活性ガスによる置換は不活性ガス
を注入しながら排気を行うことができる。このような露
光室への被露光体の搬入、搬出はガス置換室を介して行
うことができる。In order to perform exposure in such an inert gas atmosphere, an exposure apparatus is installed in an exposure chamber having a closed structure, the atmosphere is replaced with the above inert gas, and the exposure chamber is previously passed through a photomask with a pellicle attached. The object to be exposed such as a wafer carried in is exposed. The replacement with the inert gas can be carried out while injecting the inert gas. The object to be exposed can be carried in and out of the exposure chamber through the gas replacement chamber.
【００１８】露光の継続により雰囲気中の酸素濃度が高
くなる場合は、露光量のガスを不活性ガスと置換するこ
とにより酸素濃度を所定範囲に維持することができる。
また露光継続によりペリクル膜が劣化したときは、ペリ
クルを交換して露光を行う。ペリクル膜の劣化によりペ
リクル膜の膜厚が減少するが、光透過率も変化するの
で、光透過率をチェックすることにより劣化度を検出す
ることができる。When the oxygen concentration in the atmosphere becomes high due to continued exposure, the oxygen concentration can be maintained within a predetermined range by replacing the exposure amount of gas with an inert gas.
If the pellicle film deteriorates due to continued exposure, the pellicle is replaced and exposure is performed. Although the film thickness of the pellicle film decreases due to the deterioration of the pellicle film, the light transmittance also changes, and therefore the deterioration degree can be detected by checking the light transmittance.
【００１９】[0019]
【発明の効果】本発明によれば、波長２００ｎｍ以下の
真空紫外域の光線を露光に用いるリソグラフィ工程にお
いてフォトマスクを防護するペリクルを通して露光を行
う際、特定量以上の酸素を含む不活性雰囲気で露光を行
うようにしたので、短波長の光により露光を行ってもペ
リクル膜の劣化を少なくすることができる。また特定量
以下の酸素含有量とすることにより、光の減衰率を小さ
くすることができる。According to the present invention, the wavelength of 200 nm or less
For lithography processes that use light in the vacuum ultraviolet region for exposure.
Exposure through the pellicle that protects the photomask.
In this case, since the exposure is performed in an inert atmosphere containing a specific amount of oxygen or more, deterioration of the pellicle film can be suppressed even if the exposure is performed with light having a short wavelength. Further, by setting the oxygen content to a specific amount or less, it is possible to reduce the light attenuation rate.
【００２０】[0020]
【発明の実施の形態】以下、本発明の実施例について説
明する。
実施例１
容積０．４３ｍ3の露光室に、含フッ素重合体であるサ
イトップ（旭硝子（株）製商品名）の薄膜（膜厚０．８
μｍ）からなるペリクルをセットし、ガス導入口から酸
素含有量２１容量％の乾燥空気をフローした状態で１０
分間放置した。その後乾燥空気をフローした状態で、Ａ
ｒＦエキシマレーザ光（波長：１９３ｎｍ、パルスエネ
ルギー密度：７６ｍＪ／ｃｍ2・ｐｕｌｓｅ、周波数：
４０Ｈｚ、照射面積５ｍｍ×５ｍｍ）をペリクルに照射
した。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. Example 1 A thin film (film thickness 0.8) of CYTOP (a product name of Asahi Glass Co., Ltd.), which is a fluoropolymer, was placed in an exposure chamber having a volume of 0.43 m 3.
10 μm) and a dry air with an oxygen content of 21% by volume was flowed from the gas inlet to the pellicle.
Let stand for a minute. After that, with dry air flowing,
rF excimer laser light (wavelength: 193 nm, pulse energy density: 76 mJ / cm 2 · pulse, frequency:
The pellicle was irradiated with 40 Hz and an irradiation area of 5 mm × 5 mm).
【００２１】ＡｒＦエキシマレーザの総照射量とレーザ
照射によって生じたペリクル膜厚減少量の関係を図１の
（Ａ）に示す。FIG. 1A shows the relationship between the total irradiation amount of the ArF excimer laser and the pellicle film thickness reduction amount caused by the laser irradiation.
【００２２】図１においてペリクル膜の寿命を膜厚減少
量５ｎｍまでとすると、乾燥空気中では約２５００ｍＪ
／ｃｍ2の耐光性寿命があることがわかる。しかしなが
ら、乾燥空気中で照射位置でパルスエネルギー密度を７
６ｍＪ／ｃｍ2・ｐｕｌｓｅにするためには、１ｍの光
路の始端で８５ｍＪ／ｃｍ2・ｐｕｌｓｅが必要であ
り、１４％の光量減衰があることがわかった。In FIG. 1, when the life of the pellicle film is reduced to a film thickness reduction amount of 5 nm, it is about 2500 mJ in dry air.
It can be seen that there is a light resistance life of / cm 2 . However, the pulse energy density is 7 at the irradiation position in dry air.
To 6mJ / cm 2 · pulse, it is necessary to start with 85mJ / cm 2 · pulse of the optical path of 1 m, it was found to be 14% of the quantity of light attenuation.
【００２３】実施例２
実施例１において、フローするガスを、酸素を０．５０
容量％含有する窒素ガスにした以外は、全く同じ条件
で、ＡｒＦエキシマレーザ照射実験を行った。結果を図
１の（Ｂ）に示す。ＡｒＦエキシマレーザ耐光性寿命は
２５００Ｊ／ｃｍ2と実施例１とほぼ同じであり、光路
１ｍのレーザ光の減衰は０．３３％となった。Example 2 In Example 1, the flowing gas was 0.50 oxygen.
The ArF excimer laser irradiation experiment was performed under exactly the same conditions except that the nitrogen gas was contained in a volume percentage. The results are shown in Fig. 1 (B). The light resistance life of the ArF excimer laser was 2500 J / cm 2 , which was almost the same as that of Example 1, and the attenuation of the laser light in the optical path of 1 m was 0.33%.
【００２４】実施例３
実施例１においてフローするガスを、酸素を０．０５容
量％含有する窒素ガスにした以外は、全く同じ条件で、
ＡｒＦエキシマレーザ照射実験を行った。結果を図１の
（Ｃ）に示す。実施例２に比べ、膜寿命は短かくなる
が、膜厚減少量５ｎｍに達するまで１５００Ｊ／ｃｍ2
の照射が可能であった。また、１ｍの光路のレーザ光の
減衰は０．０３％であった。Example 3 Under exactly the same conditions, except that the gas flowing in Example 1 was nitrogen gas containing 0.05% by volume of oxygen,
An ArF excimer laser irradiation experiment was conducted. The results are shown in Fig. 1 (C). Compared with Example 2, the film life is shorter, but 1500 J / cm 2 until the film thickness reduction amount of 5 nm is reached.
Irradiation was possible. Further, the attenuation of the laser light on the optical path of 1 m was 0.03%.
【００２５】比較例１
実施例１においてフローするガスを窒素ガスをフローし
たところ、酸素を０．０２容量％含有する窒素ガス雰囲
気が形成された。それ以外は実施例１と全く同じ条件で
ＡｒＦエキシマレーザ照射実験を行った。結果を図１の
（Ｄ）に示す。ペリクル膜のＡｒＦエキシマレーザ耐光
性寿命は約５００Ｊ／ｃｍ2と非常に短かくなってしま
うことがわかった。このときの光路１ｍの光線減衰率は
０．０１％であった。Comparative Example 1 When nitrogen gas was flown as the gas flowing in Example 1, a nitrogen gas atmosphere containing 0.02% by volume of oxygen was formed. Other than that, the ArF excimer laser irradiation experiment was conducted under the same conditions as in Example 1. The results are shown in Fig. 1 (D). It was found that the pellicle film had an ArF excimer laser light resistance life of about 500 J / cm 2, which was extremely short. The light attenuation factor of the optical path 1 m at this time was 0.01%.
【００２６】以上の結果より、光線減衰率を問題としな
ければ、酸素含有量０．０５容量％以上の不活性ガス雰
囲気で露光することによりペリクル膜の劣化を少なくす
ることができ、特に酸素含有量０．５％以上とすること
により空気の場合と同等以上の劣化になることがわか
る。From the above results, if the light attenuating rate is not a problem, the deterioration of the pellicle film can be reduced by exposing in an inert gas atmosphere having an oxygen content of 0.05% by volume or more. It can be seen that when the amount is 0.5% or more, the deterioration is equal to or more than that in the case of air.
【図１】実施例および比較例１における総照射量と膜厚
減少量の関係を示すグラフである。FIG. 1 is a graph showing the relationship between total irradiation dose and film thickness reduction amount in Example and Comparative Example 1.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 G03F 1/14 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/027 G03F 1/14
Claims (4)
を露光に用いるリソグラフィ工程においてフォトマスク
を防護するペリクルを通して露光を行う際、０．０３容
量％以上の酸素を含有する不活性ガス雰囲気で露光を行
うことを特徴とするリソグラフィにおけるペリクル膜の
劣化防止方法。1. When exposure is performed through a pellicle that protects a photomask in a lithography process using a vacuum ultraviolet ray having a wavelength of 200 nm or less for exposure, the exposure is performed in an inert gas atmosphere containing 0.03% by volume or more of oxygen. Of the pellicle film in lithography, which is characterized by
Deterioration prevention method .
１５容量％である請求項１記載の方法。2. The oxygen content in the inert gas is 0.03 to.
The method according to claim 1, which is 15% by volume.
２記載の方法。3. The method according to claim 1, wherein the inert gas is nitrogen.
る請求項１ないし３のいずれかに記載の方法。4. The method according to claim 1, wherein the pellicle is composed of a fluoropolymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32176097A JP3433658B2 (en) | 1997-11-21 | 1997-11-21 | Method of preventing pellicle film deterioration in lithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32176097A JP3433658B2 (en) | 1997-11-21 | 1997-11-21 | Method of preventing pellicle film deterioration in lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11160885A JPH11160885A (en) | 1999-06-18 |
| JP3433658B2 true JP3433658B2 (en) | 2003-08-04 |
Family
ID=18136146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32176097A Expired - Fee Related JP3433658B2 (en) | 1997-11-21 | 1997-11-21 | Method of preventing pellicle film deterioration in lithography |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3433658B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW420770B (en) * | 1998-09-22 | 2001-02-01 | Mitsui Chemicals Inc | Pellicle film, method of preparing the same and exposure method |
-
1997
- 1997-11-21 JP JP32176097A patent/JP3433658B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11160885A (en) | 1999-06-18 |
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