JP3466089B2 - Conductive anti-reflection film and cathode ray tube - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a first layer containing conductive fine particles, and S provided so as to cover the first layer.
A conductive antireflection film having a second layer containing iO ₂ and conductive fine particles and a cathode ray tube antireflection film having the conductive antireflection film.
The present invention relates to a cathode ray tube that prevents the occurrence of AEF by reducing the reflection of light on the outer surface of the front surface (face panel) of the face plate and the conductive antireflection film that prevents the occurrence of ing electric field).

[0002]

2. Description of the Related Art CRTs for TV cathode ray tubes and computers
In a cathode ray tube used for RT or the like, electromagnetic waves are generated near the electron gun and the deflection yoke inside.

In recent years, it has been pointed out that such electromagnetic waves may leak to the outside of the cathode ray tube and adversely affect electronic devices and the like arranged in the periphery.

Therefore, the electromagnetic wave (electric field) is emitted from the cathode ray tube.
As a method of preventing the leakage of light, there has been proposed a method of lowering the surface resistance value of the face panel of the cathode ray tube.

For example, JP-A-61-118932 and JP-A-61-118932
Japanese Patent Laid-Open No. 61-118946 and Japanese Patent Laid-Open No. 63-160140 disclose various surface treatment methods for a face panel in order to prevent electrification of the face panel. It is considered to prevent the generation of an electric field (AEF). As a method of forming a conductive layer having a low surface resistance value on a face panel, PVD method, CV
Vapor phase methods such as D method and sputtering method are conceivable. For example, Japanese Patent Application Laid-Open No. 1-242769 discloses a method for forming a transparent low resistance conductive layer by a sputtering method.

Generally, since the conductive layer has a high refractive index, it is difficult to obtain a sufficient antireflection effect only with the conductive layer. Therefore, the conductive antireflection film is usually covered with an antireflection layer having a low refractive index containing SiO ₂ , for example, in order to make the conductivity and the prevention of reflection compatible and to protect the conductive layer. It is being appreciated. However, an antireflection layer containing SiO ₂ and having a low refractive index has a high surface resistance value,
If the conductive layer is covered with the antireflection layer as described above, it becomes difficult to establish conduction with the antireflection layer.

The following method has been proposed as a structure for establishing conduction in the antireflection layer of the cathode ray tube.

(1) As shown in FIG. 2, in order to conduct electricity to the conductive layer 3 which constitutes the conductive antireflection film 2 provided on the face panel 8, the conductive layer is penetrated through the antireflection layer 4. 3 is provided with a conducting portion 5 extending to 3 and a special solder 6 is attached.

(2) As shown in FIG. 3, the conductive layer 3 is provided with a region serving as the conducting portion 5, and the antireflection layer 4 is not formed in the conducting portion 5.

(3) As shown in FIG. 4, the antireflection layer 4 covering the conductive layer 3 is formed so as to be a porous layer, and the conductive layer 3 is partially exposed to serve as a conductive portion. .

However, the structure of the conductive antireflection film becomes complicated if a conductive part is provided so as to penetrate the antireflection layer in order to make the conductive antireflection film conductive or solder is attached to the conductive part. In addition, there is a problem that the productivity of the conductive antireflection film is lowered because the number of steps is increased during manufacturing.

Further, when the antireflection layer covering the conductive layer is formed to be a porous layer, the strength of the antireflection layer is lowered and the durability of the conductive antireflection film is remarkably lowered. .

By the way, as a method of forming a conductive layer on a base material such as a face panel, conventionally, a coating method or a wet method in which conductive oxide fine particles or metal fine particles are dispersed is applied. A method is known in which a liquid is applied to form a coating film, and the coating film is dried and cured or baked to form a conductive layer.

In this method, the refractive index of the layer closest to the substrate is increased, and the refractive index of the layer laminated on the layer is made lower than that of the layer closest to the substrate. Is changed to form a plurality of layers. That is, in this method, the refractive index of the layer farthest from the substrate is the lowest.

However, since a layer having a high conductivity usually has a higher refractive index than a layer having a low conductivity, when the conductive layer is formed in the layer farthest from the base material, the function of preventing light reflection of the conductive antireflection film is obtained. There is a problem that is reduced or lost.

Therefore, for example, SiO ₂ is formed on the conductive layer.
In order to prevent light reflection by providing an antireflection layer containing a low refractive index, in this case, since the antireflection layer acts as a capacitor, the surface of the conductive antireflection film has a sufficiently low resistance value. Therefore, the conductive portion cannot be formed on the surface of the conductive antireflection film as it is.

[0017]

However, if a conductive portion is provided so as to penetrate the antireflection layer for electrical conduction to the conductive antireflection film, or solder is attached to the conductive portion, the conductive antireflection film is prevented. There is a problem that the structure of the film becomes complicated and the productivity of the conductive antireflection film is lowered because the number of steps is increased during manufacturing.

Further, when the antireflection layer covering the conductive layer is formed to be a porous layer, the strength of the antireflection layer is lowered, and the durability of the conductive antireflection film is significantly lowered. .

Further, in order to form a conductive layer on a base material such as a face panel, a coating liquid in which conductive oxide fine particles or metal fine particles are dispersed is applied on the base material to form a coating film, In the method of drying and curing or baking this coating film to form a conductive layer, the refractive index of the layer farthest from the base material is the lowest, but a layer having a high conductivity usually has a higher refractive index than a layer having a low conductivity. , When the conductive layer is formed in the layer farthest from the base material,
There is a problem that the function of the conductive antireflection film for preventing light reflection is deteriorated or lost.

Further, when an antireflection layer containing SiO ₂ and having a low refractive index is provided on the conductive layer to prevent light reflection, the antireflection layer acts as a capacitor, so that the conductive reflection is prevented. There is a problem that the surface of the antireflection film cannot be made to have a sufficiently low resistance value and the conductive portion cannot be formed on the surface of the conductive antireflection film as it is.
The present invention has been made to solve the above problems, and almost completely prevents the generation of AEF and the reflection of light, and can easily establish conduction from the surface, which is excellent in productivity and durability. Another object of the present invention is to provide a conductive antireflection film.

Another object of the present invention is to provide a cathode ray tube provided with the above-mentioned conductive antireflection film and capable of displaying a high quality image for a long period of time.

[0022]

According to the present invention, a layer to be the surface (the part farthest from the base material) of the conductive antireflection film is formed with SiO 2.
By allowing the conductive fine particles to be present together with ₂ , the surface of the conductive antireflection film can be made conductive and the conductive portion can be easily formed on the surface.

That is, the conductive antireflection film according to the present invention includes gold, silver, silver compounds, copper, copper compounds, tin compounds and
400 nm selected from the group consisting of titanium compounds
The following particle sizes (values obtained by converting particles into spheres showing the same volume)
A first layer containing conductive fine particles having:
Of SiO ₂ , gold, silver and silver
Compounds, copper, copper compounds, tin compounds and titanium compounds
Selected from the group consisting of
Is converted to a sphere showing the same volume)
Particles, and the content of the conductive fine particles is
And a _second layer having a range of 5 to 50% by weight with respect to O ₂ , and having a surface resistance value of 4 × 10 ⁴ Ω / □ or less. The conductive antireflection film according to the present invention further comprises SU
The conductive anti-reflection film with the S 304 probe at a pressure of 1.5 kg / cm ^2.
After contacting with , pressurize the probe with a pressure of 1.5 kg / cm ^2.
When moving on the conductive anti-reflection film as it is,
Characterized by having a film strength that is not scratched by the probe
ing.

According to the conductive antireflection film of the present invention,
By covering the first layer containing the conductive fine particles with the second layer containing SiO ₂ and the conductive fine particles, the second layer is formed.
The refractive index of the layer can be made smaller than that of the first layer, and the surface resistance value of the second layer can be lowered. Therefore, the second layer prevents the reflection of light and
It is possible to take the conduction directly from the layer.

The cathode ray tube according to the present invention is provided on a face plate having a first surface provided with a fluorescent substance and on a second surface of the face plate facing the first surface .
Conductive antireflection film, which is gold, silver, silver compound, copper, copper
Selected from the group consisting of compounds, tin compounds and titanium compounds
Particle size of 400 nm or less (particles of the same volume
Is provided so as to cover the first layer, and a first layer containing conductive fine particles having a value (converted to a sphere)
iO ₂ and gold, silver, silver compounds, copper, copper compounds, tin compounds
And selected from the group consisting of titanium compounds,
Particle size of 400 nm or less (convert particles into spheres with the same volume
And a conductive fine particle having a
The content of particles is in the range of 5 to 50% by weight based on the SiO ₂ .
And a second layer having a surface resistance value of 4 × 10 ⁴ Ω /
□ It is characterized by comprising the following conductive antireflection film. The cathode ray tube according to the present invention further comprises the conductive material.
Sex antireflection film wherein a probe made SUS 304 at a pressure of 1.5 kg / cm ²
After making contact with the conductive anti-reflection film, move the probe to 1.5 kg / cm.
Moves on the conductive anti-reflection film while applying pressure of ²
It has a film strength so that it will not be damaged by the probe when it is made to
It is characterized by that.

According to the cathode ray tube of the present invention, the face plate having the first surface provided with the fluorescent substance has the first surface containing the conductive fine particles on the second surface facing the first surface. By providing the first layer and covering the first layer with the second layer containing SiO ₂ and conductive fine particles, the refractive index of the second layer is made smaller than that of the first layer, and Lower the surface resistance of the second layer (specifically 4 × 10 ⁴ Ω / □ or less
Below) Therefore, it becomes possible to prevent the reflection of light by the second layer and to make electrical contact with the second layer at a necessary conductivity.

In the present invention, the conductive fine particles contained in the first layer and the conductive fine particles contained in the second layer may be the same or different.

Examples of the conductive fine particles used in the present invention include ultrafine particles of at least one substance selected from the group consisting of gold, silver, silver compounds, copper, copper compounds, tin compounds and titanium compounds. . Examples of the silver compound include silver oxide, silver nitrate, silver acetate, silver benzoate, silver bromate, silver bromide, silver carbonate, silver chloride, silver chromate, silver citrate, and silver cyclohexanebutyrate. . From the viewpoint of being able to exist in a more stable state in the first and second layers, for example, Ag-Pd, Ag-Pt and A
A silver alloy represented by g-Au is suitable. Examples of the copper compound include copper sulfate, copper nitrate, copper phthalocyanine, and the like. As the tin compound, for example,
ATO and I represented by Sb _x Sn _1-x O ₂ and In _x Sn _1-x O ₂
You can raise your TO. Examples of titanium compounds include TiN.

The conductive fine particles are used, for example, by selecting one kind or two or more kinds from the fine particles made of these substances.

The size of the conductive fine particles is preferably as large as possible in view of improvement of conductivity, but in view of the optical characteristics of the conductive antireflection film, the particle size (particles having the same volume as a sphere) is taken into consideration. Value of 400 nm or less, more preferably
It is desirable that the thickness is 50 to 200 nm. When the particle diameter of the conductive fine particles exceeds 400 nm, the light transmittance of the conductive antireflection film is significantly reduced, and light is scattered by the fine particles, so that the conductive antireflection film becomes cloudy. Particle size 400
When a conductive antireflection film formed by using conductive fine particles exceeding nm is applied to a cathode ray tube, the resolution of the cathode ray tube may decrease.

Further, the preferable amount of the conductive fine particles to be contained in the second layer is 5 to 50 weight based on SiO ₂ , that is, the value of conductive fine particles (weight) / SiO ₂ (weight) × 100. %, More preferably 10 to 40% by weight.
When the amount of the conductive fine particles contained in the second layer is less than 5% by weight with respect to SiO ₂ , the surface resistance value of the second layer is
There is a possibility that the resistance value may not be low enough to establish conduction with the surface of the conductive antireflection film.

When the amount of the conductive fine particles contained in the second layer exceeds 50% by weight with respect to SiO ₂ , the light reflectance of the conductive antireflection film becomes high, and the light reflection is sufficient. Can be difficult to prevent.

Further, in the present invention, in order to improve the optical characteristics of the conductive antireflection film, for example, pigment ultrafine particles of a dye such as copper phthalocyanine can be present in the first layer. At this time, the particle diameter of the ultrafine particles of the dye (value converted into particles having the same volume) is 10 to 2
The range is about 00 nm. Further, in order to improve the weather resistance (water resistance, chemical resistance, etc.) of the second layer and enhance the reliability of the conductive antireflection film, the second layer may be made of, for example, Zr.
One or more compounds such as O ₂ , fluorinated silanes or silicates may be present depending on environmental conditions and the like. The amount of the compound present in the second layer is adjusted so that the function of the conductive antireflection film is not impaired. For example, if the presence of ZrO ₂ in the second layer, the content of the ZrO _2, based on the content of SiO _2, that is, the value of ZrO ₂ (mol) / SiO ₂ (mol) × 100. 5 to 40 mol%, more preferably 10 to
20 mol% When the content of ZrO ₂ in the second layer is less than 5 mol% of SiO ₂ , the effect of ZrO ₂ is hardly obtained. When the content of ZrO ₂ in the second layer exceeds 40 mol% with respect to the content of SiO ₂ ,
The strength of the second layer is reduced. Further, as described above, the second layer may contain ZrO ₂ together with, for example, fluorosilane. In this case, the conductive antireflection film can be easily brought into contact with the surface at a required conductivity, and further, water resistance, acid resistance, alkali resistance and the like can be further improved.

In the present invention, the method for forming the first layer may be, for example, Ag or a nonionic surfactant.
Examples thereof include a method in which a solution in which fine particles such as Cu are dispersed is applied onto a base material such as the outer surface of a face panel of a cathode ray tube by a spin coating method, a spray method, an immersion method, or the like. At this time, in order to further suppress the occurrence of unevenness when forming the first layer and obtain the first layer having a uniform film thickness, the surface temperature of the base material is set to about 5 to 60 ° C. It is desirable to set it. The thickness of the first layer depends on the concentration of fine particles of a metal such as Ag or Cu contained in the solution, the number of revolutions at the time of coating in the spin coating method, the discharge amount of the dispersion liquid in the spray method or the pulling rate in the dipping method. It can be easily controlled by adjusting. In addition, as a solvent of the solution, for example, ethanol, IPA, or the like can be contained together with water, if necessary. Further, the solution may further contain an organometallic compound, a pigment, a dye and the like to add another function to the formed first layer.

As a method of forming the second layer on the first layer, for example, a nonionic surfactant and Ag are used together.
Examples thereof include a method in which a solution in which fine particles such as Cu and Cu and a silicate are dispersed is applied onto the first layer by a spin coating method, a spray method, an immersion method, or the like. The thickness of the second layer is
For example, it can be easily controlled by adjusting the concentrations of Ag, Cu and silicate contained in the solution, the number of rotations during coating in the spin coating method, the release amount of the solution in the spraying method or the pulling rate in the dipping method. it can. The first and second coating films thus formed are
The conductive antireflection film according to the present invention can be obtained by simultaneously baking at 50 to 450 ° C. for 10 to 180 minutes. In the present invention, in order to reduce the reflectance of the conductive antireflection film more effectively, for example, the reflectance of the first layer and the second layer are provided between the first layer and the second layer. It is possible to provide a third layer having a reflectance substantially in the middle of the reflectances of the two layers to form a structure having two or more layers. At this time, the reflectance of the conductive antireflection film can be effectively reduced by setting the difference in refractive index between two adjacent layers to be small. In the present invention, when the conductive antireflection film is composed of the first and second layers, the thickness of the first layer is usually 2
Set it so that the refractive index is 00 nm or less and about 1.7 to 3,
Regarding the second layer, the thickness of the layer is set to about 10 times or less the thickness of the first layer and the refractive index is set to about 1.38 to 1.70. When a third layer is provided between the layers, the thickness and refractive index of each layer in the first to third layers are set appropriately in consideration of the light transmittance and refractive index of the entire antireflection film. do it.

[0036]

BEST MODE FOR CARRYING OUT THE INVENTION Next, the present invention will be described in more detail with reference to specific examples, but the present invention is not limited to the following examples.

First, ITO fine particles were dispersed in ethanol to prepare a 2% by weight ITO dispersion liquid.

Further, a 1 wt% silicate solution (tetramethoxysilane trimer, tetramer mixed solution (3.5
Against mer)), 0 wt% with respect to SiO ₂ in SiO ₂ in terms of solid content (Comparative Example), 5, 10, 20, 40, 50 by weight% (Example 1-5), and 100 weight % (Reference example) I
Fine particles of TO were added and mixed to prepare second to eighth dispersion liquids (here, wt% is ITO (weight) / SiO 2).
₂ (weight) x 100. ). Then bar off polished by cerium oxide outer surface of the cathode ray tube face panel after assembly completion (17 inch panels), garbage, after removal of dust and oil or the like, the first dispersion liquid by spin coating It was applied to form a first coating film. The coating conditions are as follows: panel (coating surface) temperature is 30 ° C, rotation speed is 80 rpm-5s when the solution is injected.
ec, 150 rpm-80 sec when the liquid was completely shaken off (film formation). Then, each of the second to eighth solutions is applied onto the first coating film by the spin coating method under the conditions of 80 rpm-5 sec when injecting the solution and 150 rpm-80 sec when the liquid is completely shaken off, and the second coating is applied. After forming the film, the first and second coating films were baked at a temperature of 210 ° C. for 30 minutes.

FIG. 1 shows the cathode ray tubes thus obtained and corresponding to Examples 1 to 6.

In FIG. 1 (a), a color cathode ray tube includes a panel 1 and a funnel 7 integrally joined to the panel 1.
The face panel 8 incorporated in the panel 1 has an outer envelope made of three-color phosphor layers that emit blue, green, and red, and a gap between the three-color phosphor layers. A phosphor screen 9 including a black light absorbing layer is formed. The three-color phosphor layer is obtained by using a slurry in which each phosphor is dispersed with PVA, a surfactant, pure water and the like, and applying this to the inner surface of the face panel 8 according to a usual method. The shape of the three-color phosphor layer may be striped or dot-shaped, but here it is dot-shaped. A shadow mask 10 having a large number of electron beam passage holes formed therein is mounted so as to face the phosphor screen 9. Further, inside the neck 11 of the funnel 7, an electron gun 12 for irradiating the fluorescent screen 8 with an electron beam is arranged, and the electron beam emitted by the electron gun 12 collides with the fluorescent screen 9, The three-color phosphor layer is excited and emits light. The conductive antireflection film 2 is formed on the outer surface of the face panel 8. In addition, in FIG.
The cross section which cut | disconnected the cathode ray tube shown to (a) along AA 'is shown. As shown in FIG. 1B, on the surface of the face panel 8, a first layer (conductive layer) 14 containing fine particles 13 of ITO and IT in a matrix of SiO _2.
A conductive antireflection film 2 including a second layer 15 in which fine particles 13 of O are dispersed is formed. Next, the surface resistance value, resistance stability, film strength and luminous regular reflectance of the conductive antireflection films obtained in Examples 1 to 5, Reference Example and Comparative Example were measured. The surface resistance value is a value obtained by measurement using Loresta IP MCP-T250 (produced by Yuka Denshi Co., Ltd.). Regarding resistance stability, ○ indicates that the value does not change during measurement. Those in which the median value fluctuated were defined as x. Further, the film strength is such that the probe made of SUS 304 is brought into contact with the conductive antireflection film at a pressure of 1.5 kg / cm ² , and then the conductive reflection is performed while the probe is pressed at a pressure of 1.5 kg / cm ^2. Those that were not scratched by the probe after being moved on the prevention film were marked with ◯, and those with scratches were marked with x. The luminous specular reflectance is a value obtained by CR-353G (manufactured by Minolta). Table 1 shows these measurement results.

[0041]

[Table 1] As is clear from Table 1, in each of the conductive antireflection films obtained in Examples 1 to 5 , in addition to having a low surface resistance value effective for conducting from the surface of the conductive antireflection film, It has sufficient resistance stability. Further, the luminous regular reflectance is also a practically sufficient value because it functions as a conductive antireflection film. On the other hand, in the conductive antireflection film obtained in the comparative example, ITO is used as the second layer.
The fine particles did not exist, so that the surface resistance was high and the resistance stability was unstable. As a result, conduction could not be obtained from the surface of the conductive antireflection film.

[0042]

As is clear from the above examples, according to the conductive antireflection film of the present invention, the first layer containing the first conductive fine particles is used as the second layer in the SiO ₂ matrix.
By covering with the second layer containing the conductive fine particles of
The refractive index of the second layer can be made smaller than that of the first layer, and the surface resistance value of the second layer can be lowered. Therefore, conductive reflection prevention capable of preventing the occurrence of AEF, preventing the reflection of light by the second layer, and achieving stable conduction from the second layer without forming a conducting portion or the like. A membrane can be provided. Further, since the number of steps and the cost for obtaining conduction from the conductive antireflection film can be reduced, the conductive antireflection film having excellent productivity can be provided. Furthermore, since the second layer covering the first layer has high stability, it is possible to provide a conductive antireflection film having excellent durability.

Further, according to the cathode ray tube of the present invention, the first conductive particles containing the first conductive particles are formed on the surface of the face plate.
Is provided and the first layer is covered with a second layer containing SiO ₂ and second conductive fine particles to make the refractive index of the second layer smaller than that of the first layer. In addition, the surface resistance value of the second layer can be lowered. Therefore,
To provide a cathode ray tube capable of preventing the generation of AEF, preventing the reflection of light by the second layer, and being able to stably conduct electricity from the second layer without forming a conducting portion or the like. You can Further, since the number of steps and the cost for obtaining conduction from the conductive antireflection film can be reduced, it is possible to provide a cathode ray tube having excellent productivity. Further, since the second layer covering the first layer has high stability, it is possible to provide a cathode ray tube capable of displaying a high quality image for a long period of time.

[0045]

As is apparent from the above description, according to the conductive antireflection film of the present invention, the first layer containing the first conductive fine particles is formed of SiO ₂ and the second conductive fine particles. By covering with a second layer containing the above, the refractive index of the second layer can be made smaller than that of the first layer, and the surface resistance value of the second layer can be lowered. Therefore,
A conductive antireflection film capable of preventing the generation of AEF, preventing the reflection of light by the second layer, and stably conducting from the second layer without forming a conducting portion or the like. Can be provided. Further, since the number of steps and the cost for obtaining conduction from the conductive antireflection film can be reduced, the conductive antireflection film having excellent productivity can be provided. Furthermore, since the second layer covering the first layer has high stability, it is possible to provide a conductive antireflection film having excellent durability.

Further, according to the cathode ray tube of the present invention, the first conductive particles containing the first conductive fine particles are formed on the surface of the face plate.
Is provided and the first layer is covered with a second layer containing SiO ₂ and second conductive fine particles to make the refractive index of the second layer smaller than that of the first layer. In addition, the surface resistance value of the second layer can be lowered. Therefore,
To provide a cathode ray tube capable of preventing the generation of AEF, preventing the reflection of light by the second layer, and being able to stably conduct electricity from the second layer without forming a conducting portion or the like. You can Further, since the number of steps and the cost for obtaining conduction from the conductive antireflection film can be reduced, it is possible to provide a cathode ray tube having excellent productivity. Further, since the second layer covering the first layer has high stability, it is possible to provide a cathode ray tube capable of displaying a high quality image for a long period of time.

[Brief description of drawings]

FIG. 1 is a view schematically showing the constitution of a cathode ray tube (a) and a conductive antireflection film (b) according to the present invention.

FIG. 2 is a diagram schematically showing the configuration of a conductive antireflection film in a conventional cathode ray tube.

FIG. 3 is a diagram schematically showing a configuration of a conductive antireflection film in a conventional cathode ray tube.

FIG. 4 is a diagram schematically showing a configuration of a conductive antireflection film in a conventional cathode ray tube.

[Explanation of symbols]

1 ... Panel 2 ... Conductive antireflection film 3 ... Conductive layer 4 ... Antireflection layer 5 ... Conductive part 6 ... Solder 7 ... Funnel 8 ... Face panel 9 ...
Fluorescent screen 10 ... Shadow mask 11 ... Neck 12 ...
… Electron gun 13 …… ITO fine particles 14 …… First layer 15
...... Second layer

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-9-76401 (JP, A) JP-A-3-179649 (JP, A) US Patent 5243255 (US, A) US Patent 5412278 (US, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) G02B 1/11 H01J 29/88

Claims (8)

(57) [Claims] 1. Gold, silver, silver compound, copper, copper compound, stannous
And a titanium compound selected from the group consisting of
Particle size of 400 nm or less (convert particles to spheres with the same volume
A first layer containing conductive fine particles having a calculated value) , SiO ₂ and gold provided so as to cover the first layer ,
Silver, silver compounds, copper, copper compounds, tin compounds and titanation
Selected from the group consisting of compounds and particles of 400 nm or less
Have a diameter (value of particles converted into spheres showing the same volume)
A _second layer containing conductive fine particles, wherein the content of the conductive fine particles is in the range of 5 to 50 wt% with respect to the SiO ₂ . A conductive antireflection film having a resistance of 10 ⁴ Ω / □ or less. 2. Gold, silver, silver compound, copper, copper compound, stannous
And a titanium compound selected from the group consisting of
Particle size of 400 nm or less (convert particles to spheres with the same volume
First layer containing conductive fine particles having a calculated value)
And SiO ₂ and gold, which are provided so as to cover the first layer ,
Silver, silver compounds, copper, copper compounds, tin compounds and titanation
Selected from the group consisting of compounds and particles of 400 nm or less
Have a diameter (value of particles converted into spheres showing the same volume)
Contains conductive fine particles, and the content of the conductive fine particles is
Second layer in the range of 5 to 50% by weight with respect to the SiO ₂ .
And a surface resistance value of 4 × 10 ⁴ Ω / □ or less.
Underneath and using a SUS 304 probe at a pressure of 1.5 kg / cm ²
After making contact with the conductive anti-reflection film, move the probe to 1.5 kg / cm.
Moves on the conductive anti-reflection film while applying pressure of ²
It has a film strength so that it will not be scratched by the probe when
A conductive antireflection film characterized by the following. Wherein the second layer according to claim 1 or 2, wherein the conductive anti-reflection film, characterized in that it contains in the range of 10 to 40 wt% of the conductive fine particles to the SiO _2. Wherein said second layer is ZrO _2, conductive reflective of any one of claims 1 to 3, characterized in that it contains one or more selected from a fluorine silane and silicates Preventive film. 5. A face plate having a first surface provided with a fluorescent material, and a conductive antireflection film provided on a second surface of the face plate facing the first surface.
Te, gold, silver, silver compound, copper, a copper compound, tin compound and
400 nm selected from the group consisting of titanium compounds
The following particle sizes (values obtained by converting particles into spheres showing the same volume)
A first layer containing conductive fine particles having:
Of SiO ₂ , gold, silver and silver
Compounds, copper, copper compounds, tin compounds and titanium compounds
Selected from the group consisting of
Is converted to a sphere showing the same volume)
Particles, and the content of the conductive fine particles is
And a conductive antireflection film having a surface resistance value of 4 × 10 ⁴ Ω / □ or less and a second layer in the range of 5 to 50% by weight with respect to O ₂ . And a cathode ray tube. 6. A fe having a first surface with a phosphor.
On the base plate and on the second surface facing the first surface of the face plate.
Is a conductive antireflection film provided on the
Compounds, copper, copper compounds, tin compounds and titanium compounds
Selected from the group consisting of
Is converted to a sphere showing the same volume)
So as to cover the first layer containing particles and the first layer
Provided with SiO ₂ , gold, silver, silver compound, copper, copper compound
Selected from the group consisting of tin compounds, tin compounds and titanium compounds.
Particle size of 400 nm or less (particles with the same volume
Conductive fine particles having a value converted to a spherical ball),
The content of the conductive fine particles is 5 to 50 relative to the SiO ₂ .
Conductive antireflection having a second layer in the range of wt.%
The conductive antireflection film has a surface resistance value of 4 × 10 ⁴ Ω / □ or less.
Underneath and using a SUS 304 probe at a pressure of 1.5 kg / cm ²
After making contact with the conductive anti-reflection film, move the probe to 1.5 kg / cm.
Moves on the conductive anti-reflection film while applying pressure of ²
It has a film strength so that it will not be scratched by the probe when
A cathode ray tube characterized in that Wherein said second layer according to claim 5 or 6 cathode ray tube according to characterized in that it contains in the range of 10 to 40 wt% of the conductive fine particles to the SiO _2. Wherein said second layer is a cathode ray tube of ZrO _2, any one of claims 5 to 7, characterized in that it contains one or more selected from a fluorine silane and silicates.