JP3473433B2 - Work mounting method - Google Patents
Work mounting methodInfo
- Publication number
- JP3473433B2 JP3473433B2 JP25653798A JP25653798A JP3473433B2 JP 3473433 B2 JP3473433 B2 JP 3473433B2 JP 25653798 A JP25653798 A JP 25653798A JP 25653798 A JP25653798 A JP 25653798A JP 3473433 B2 JP3473433 B2 JP 3473433B2
- Authority
- JP
- Japan
- Prior art keywords
- work
- casing
- flip chip
- package
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、フリップチップな
どのワークをバンプを介在させて基板などに実装するワ
ークの実装方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a work mounting method for mounting a work such as a flip chip on a substrate with bumps interposed.
【０００２】[0002]
【従来の技術】フリップチップなどのワークを基板など
のワークに実装する方法として、ワークの電極同士をバ
ンプで接合することが知られている。2. Description of the Related Art As a method of mounting a work such as a flip chip on a work such as a substrate, it is known to bond electrodes of the work with bumps.
【０００３】図５は従来の実装済のパッケージの断面図
である。図中、１は第１のワークである基板であり、そ
の上面には電極２が形成されている。また電極２以外の
基板１の表面にはレジスト３がコーティングされてい
る。１１は第２のワークであるフリップチップであっ
て、その下面には電極１２が形成されており、また電極
１２以外の下面には保護膜１３が形成されている。FIG. 5 is a cross-sectional view of a conventional mounted package. In the figure, 1 is a substrate which is a first work, and an electrode 2 is formed on the upper surface thereof. The surface of the substrate 1 other than the electrodes 2 is coated with a resist 3. Reference numeral 11 is a flip chip which is a second work, and an electrode 12 is formed on the lower surface thereof, and a protective film 13 is formed on the lower surface other than the electrode 12.
【０００４】フリップチップ１１の電極１２にはバンプ
１４が突設されている。フリップチップ１１のバンプ１
４は加熱炉で加熱処理するなどして電極２に接着されて
いる。またフリップチップ１１を基板１に搭載した後、
基板１とフリップチップ１１の間にはアンダーフィル樹
脂４が充てんされている。アンダーフィル樹脂４は、フ
リップチップ１１を基板１上にしっかり固着するために
充てんされる。Bumps 14 are projected on the electrodes 12 of the flip chip 11. Bump 1 of flip chip 11
4 is adhered to the electrode 2 by heat treatment in a heating furnace. After mounting the flip chip 11 on the substrate 1,
An underfill resin 4 is filled between the substrate 1 and the flip chip 11. The underfill resin 4 is filled to firmly fix the flip chip 11 on the substrate 1.
【０００５】通常、アンダーフィル樹脂４は、基板１上
にディスペンサなどで塗布される。塗布されたアンダー
フィル樹脂４は、毛細管力により基板１とフリップチッ
プ１１の狭い間に進入して充てんされる。その後、アン
ダーフィル樹脂４は加熱処理などにより硬化する。図５
において、鎖線で示すアンダーフィル樹脂４はディスペ
ンサで基板１に塗布された直後の状態を示しており、ま
た実線で示すアンダーフィル樹脂４は基板１とフリップ
チップ１１に進入した後の状態を示している。Usually, the underfill resin 4 is applied on the substrate 1 by a dispenser or the like. The applied underfill resin 4 enters and is filled in a narrow space between the substrate 1 and the flip chip 11 by a capillary force. After that, the underfill resin 4 is cured by heat treatment or the like. Figure 5
In FIG. 3, the underfill resin 4 shown by the chain line shows the state immediately after being applied to the substrate 1 by the dispenser, and the underfill resin 4 shown by the solid line shows the state after entering the substrate 1 and the flip chip 11. There is.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら従来の方
法では、基板１とフリップチップ１１の間に進入したア
ンダーフィル樹脂４内に気泡５が発生しやすいという問
題点があった。この気泡５はフリップチップ１１の固着
力を低下させ、また電極２，１２を酸化させることか
ら、気泡５の発生は解消することが望ましい。気泡５の
発生原因は必ずしも明確ではないが、基板やフリップチ
ップなどのワークの表面に対するアンダーフィル樹脂の
濡れ性の良悪に原因するものと考えられる。またこのよ
うな気泡は、フリップチップに限らず、ワーク同士をバ
ンプを介在させて実装する実装構造に広く発生するもの
である。However, the conventional method has a problem that bubbles 5 are easily generated in the underfill resin 4 that has entered between the substrate 1 and the flip chip 11. Since the bubbles 5 reduce the fixing force of the flip chip 11 and oxidize the electrodes 2 and 12, it is desirable to eliminate the generation of the bubbles 5. Although the cause of generation of the bubble 5 is not always clear, it is considered to be caused by the good or poor wettability of the underfill resin with respect to the surface of a work such as a substrate or a flip chip. Further, such bubbles are widely generated not only in the flip chip but also in the mounting structure for mounting the works with the bumps interposed therebetween.
【０００７】そこで本発明は、アンダーフィル樹脂内に
気泡が発生するのを防止できるワークの実装方法を提供
することを目的とする。Therefore, an object of the present invention is to provide a method of mounting a work which can prevent bubbles from being generated in the underfill resin.
【０００８】[0008]
【課題を解決するための手段】本発明は、第１のワーク
上に第２のワークをバンプを介在させて搭載したパッケ
ージをプラズマ処理装置のケーシングに収納し、このケ
ーシング内にプラズマによって活性物質を発生させ、こ
の活性物質を前記第１のワークと前記第２のワークの間
に侵入させて前記第１のワークと前記第２のワークの表
面に接触させた後、前記パッケージを前記ケーシングか
ら取り出し、次いで前記第１のワーク上にアンダーフィ
ル樹脂を塗布し、このアンダーフィル樹脂を前記第１の
ワークと前記第２のワークの間に進入させることを特徴
とするワークの実装方法である。また好ましくは、活性
物質を酸素ラジカルとする。According to the present invention, a package in which a second work is mounted on a first work via bumps is housed in a casing of a plasma processing apparatus, and an active material is activated by plasma in the casing. Is generated, the active substance is caused to enter between the first work and the second work to contact the surfaces of the first work and the second work, and then the package is removed from the casing. The work mounting method is characterized in that it is taken out, then an underfill resin is applied onto the first work, and the underfill resin is allowed to enter between the first work and the second work. Also preferably, the active substance is an oxygen radical.
【０００９】上記構成において、アンダーフィル樹脂を
第１のワークと第２のワークの間に進入させて充てんす
る前に、パッケージをプラズマ処理装置のケーシングに
収納し、プラズマによって酸素ラジカルなどの活性物質
を発生させる。すると活性物質は第１のワークと第２の
ワークの間に侵入してその表面に接触し、この表面の物
理的性質あるいは化学的性質を改質する。その後、アン
ダーフィル樹脂を第１のワークと第２のワークの間に進
入させて充てんする。In the above structure, before the underfill resin is inserted between the first work and the second work to be filled, the package is housed in the casing of the plasma processing apparatus, and an active substance such as oxygen radicals is activated by plasma. Generate. Then, the active substance penetrates between the first work and the second work and comes into contact with the surface thereof, and modifies the physical or chemical properties of the surface. After that, the underfill resin is introduced between the first work and the second work to fill it.
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。図１は本発明の一実施の形態のプ
ラズマ処理装置の断面図、図２、図３、図４は同パッケ
ージの断面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a plasma processing apparatus according to an embodiment of the present invention, and FIGS. 2, 3, and 4 are sectional views of the same package.
【００１１】まず、図１を参照してプラズマ処理装置３
０の構造を説明する。３１は台板であり、その内部に電
極部３２が設けられている。電極部３２には高圧高周波
の電源３３が接続されている。台板３１上にはケーシン
グ３４が開閉自在に設置されている。ケーシング３４は
アース３５に接続されている。ケーシング３４の内部に
はパイプ３６を通じてガス供給手段（図外）からプラズ
マ発生用のガスが供給される。またケーシング３４内の
ガスはパイプ３７を通じて真空吸引される。３８は真空
吸引用のポンプである。First, referring to FIG. 1, a plasma processing apparatus 3
The structure of 0 will be described. Reference numeral 31 is a base plate in which the electrode portion 32 is provided. A high-voltage and high-frequency power source 33 is connected to the electrode portion 32. A casing 34 is installed on the base plate 31 so as to be openable and closable. The casing 34 is connected to the ground 35. Gas for plasma generation is supplied to the inside of the casing 34 from a gas supply means (not shown) through a pipe 36. Further, the gas in the casing 34 is vacuumed through the pipe 37. 38 is a vacuum suction pump.
【００１２】電極部３２上には、基板１上にフリップチ
ップ１１を搭載したパッケージ１０が収納されている。
図２はこのパッケージ１０を示している。図５に示す要
素と同一要素には同一符号を付すことによりパッケージ
１０の説明は省略する。本発明で重要なことは、第１ワ
ーク（基板１）上に第２のワーク（フリップチップ１
１）を搭載したパッケージ１０の状態でケーシング３４
に収納し、プラズマ処理を行うことである。A package 10 having a flip chip 11 mounted on a substrate 1 is housed on the electrode portion 32.
FIG. 2 shows this package 10. The description of the package 10 is omitted by giving the same reference numerals to the same elements as those shown in FIG. What is important in the present invention is that the second work (flip chip 1) is formed on the first work (substrate 1).
In the state of the package 10 equipped with 1), the casing 34
It is to be housed in and plasma treated.
【００１３】次にプラズマ処理について説明する。図１
に示すようにパッケージ１０を電極部３２上に載置して
ケーシング３４内に収納する。次にポンプ３８を駆動し
てケーシング３４内を真空吸引し、またパイプ３６を通
じてプラズマ発生用のガスをケーシング３４内に供給す
る。Next, the plasma processing will be described. Figure 1
As shown in FIG. 3, the package 10 is placed on the electrode portion 32 and housed in the casing 34. Next, the pump 38 is driven to suck the inside of the casing 34 by vacuum, and a gas for plasma generation is supplied into the casing 34 through the pipe 36.
【００１４】次に電源３３を入力して電極部３２に高周
波電圧を印加する。するとケーシング３４内のガスの大
部分はイオン化し、また一部分はラジカルと呼ばれる活
性に富んだ活性物質となる。そしてイオンや活性物質は
基板１とフリップチップ１１の間に侵入し、基板１やフ
リップチップ１１の表面に接触してこの表面にコーティ
ングされたレジスト３や保護膜１３の物理的性質や化学
的性質を改質する。この改質効果はイオンよりも活性力
に富むラジカルの方が大きい。プラズマによりラジカル
化するガスとしては酸素やアルゴンなどがあるが、実験
結果によれば酸素の改質効果が良好であった。Next, the power source 33 is input to apply a high frequency voltage to the electrode portion 32. Then, most of the gas in the casing 34 is ionized, and a part thereof becomes an active substance having a high activity called a radical. Then, the ions and the active substance enter between the substrate 1 and the flip chip 11, come into contact with the surfaces of the substrate 1 and the flip chip 11, and the physical properties and chemical properties of the resist 3 and the protective film 13 coated on the surfaces. Reform. This modification effect is greater in radicals that are more active than ions. Although there are oxygen, argon, and the like as the gas radicalized by plasma, the effect of modifying oxygen is good according to the experimental results.
【００１５】酸素はプラズマ化すると酸素イオンや活性
物質である酸素ラジカルｏ*となる。そしてケーシング
３４内の圧力を上げ、酸素ラジカル密度を増加させる
と、酸素ラジカルは基板１とフリップチップ１１の間
（この間は、上述したように一般に数１０ミクロンであ
ってきわめて狭い）の間に大量に侵入し、基板１の上面
やフリップチップ１１の下面に充分に接触してその強い
活性力により表面の物理的性質や化学的性質を効果的に
改質する。この場合のケーシング３４の圧力は５０〜１
５０パスカル程度が望ましく、更には８０〜１２０パス
カル程度がより望ましい。ｅ-はイオンである。When oxygen is turned into plasma, it becomes oxygen ions and oxygen radicals o * which are active substances. Then, when the pressure in the casing 34 is increased to increase the oxygen radical density, a large amount of oxygen radicals are generated between the substrate 1 and the flip chip 11 (during this time, it is generally tens of microns and extremely narrow as described above). And fully contacts the upper surface of the substrate 1 and the lower surface of the flip chip 11 to effectively modify the physical and chemical properties of the surface due to its strong activation force. The pressure of the casing 34 in this case is 50 to 1
It is preferably about 50 pascals, more preferably about 80 to 120 pascals. e - is an ion.
【００１６】以上のようにしてパッケージ１０のプラズ
マ処理が終了したならば、ケーシング３４を開放してパ
ッケージ１０を取り出す。次に図３に示すように基板１
上にディスペンサなどによりアンダーフィル樹脂４を塗
布する。するとアンダーフィル樹脂４は毛細管力により
基板１とフリップチップ１１の間にゆっくり進入し、こ
の間にはアンダーフィル樹脂４が充てんされる。図４は
進入・充てんが終了したパッケージ１０を示している。
プラズマ処理により基板１やフリップチップ１１の表面
は改質されているので気泡は生じていない。次いでアン
ダーフィル樹脂４を加熱処理などにより硬化させれば、
フリップチップ１１は基板１にしっかり固着されてパッ
ケージ１０は完成する。When the plasma treatment of the package 10 is completed as described above, the casing 34 is opened and the package 10 is taken out. Next, as shown in FIG.
The underfill resin 4 is applied on the top by a dispenser or the like. Then, the underfill resin 4 slowly enters between the substrate 1 and the flip chip 11 by the capillary force, and the underfill resin 4 is filled in the gap. FIG. 4 shows the package 10 that has been entered and filled.
Since the surfaces of the substrate 1 and the flip chip 11 are modified by the plasma treatment, no bubbles are generated. Next, if the underfill resin 4 is cured by heat treatment or the like,
The flip chip 11 is firmly fixed to the substrate 1 to complete the package 10.
【００１７】[0017]
【発明の効果】以上説明したように本発明によれば、ワ
ークの表面をプラズマ処理により改質することにより、
ワークの間に進入するアンダーフィル樹脂に気泡が生じ
るのを解消でき、第１のワークを第２のワークにしっか
り実装することができる。また第１のワーク上に第２の
ワークを搭載したパッケージの状態で、第１のワークの
表面と第２のワークの表面を同時に改質できるので、き
わめて作業性よく改質作業を行うことができる。As described above, according to the present invention, by modifying the surface of the work by plasma treatment,
It is possible to eliminate the occurrence of bubbles in the underfill resin that enters between the works, and it is possible to firmly mount the first work on the second work. Further, since the surface of the first work and the surface of the second work can be modified at the same time in the state of the package in which the second work is mounted on the first work, the modification work can be performed with extremely good workability. it can.
【図１】本発明の一実施の形態のプラズマ処理装置の断
面図FIG. 1 is a sectional view of a plasma processing apparatus according to an embodiment of the present invention.
【図２】本発明の一実施の形態のパッケージの断面図FIG. 2 is a sectional view of a package according to an embodiment of the present invention.
【図３】本発明の一実施の形態のパッケージの断面図FIG. 3 is a sectional view of a package according to an embodiment of the present invention.
【図４】本発明の一実施の形態のパッケージの断面図FIG. 4 is a sectional view of a package according to an embodiment of the present invention.
【図５】従来の実装済のパッケージの断面図FIG. 5 is a cross-sectional view of a conventional mounted package.
１ 基板 ２ 電極 ４ アンダーフィル樹脂 １０ パッケージ １１ フリップチップ １２ 電極 １４ バンプ ３０ プラズマ処理装置 ３４ ケーシング 1 substrate 2 electrodes 4 Underfill resin 10 packages 11 flip chips 12 electrodes 14 bumps 30 Plasma processing device 34 casing
───────────────────────────────────────────────────── フロントページの続き (72)発明者 有田 潔 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 平５−166976（ＪＰ，Ａ) 特開 昭58−147143（ＪＰ，Ａ) 特開 平10−22313（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 H01L 21/56 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kiyoshi Arita 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-5-166976 (JP, A) JP-A-58- 147143 (JP, A) JP-A-10-22313 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21/60 H01L 21/56
Claims (4)
介在させて搭載したパッケージをプラズマ処理装置のケ
ーシングに収納し、このケーシング内にプラズマによっ
て活性物質を発生させ、この活性物質を前記第１のワー
クと前記第２のワークの間に侵入させて前記第１のワー
クと前記第２のワークの表面に接触させた後、前記パッ
ケージを前記ケーシングから取り出し、次いで前記第１
のワーク上にアンダーフィル樹脂を塗布し、このアンダ
ーフィル樹脂を前記第１のワークと前記第２のワークの
間に進入させることを特徴とするワークの実装方法。1. A package in which a second work is mounted on a first work via bumps is housed in a casing of a plasma processing apparatus, and an active substance is generated by plasma in the casing. After being inserted between the first work and the second work to contact the surfaces of the first work and the second work, the package is taken out from the casing, and then the first work is performed.
A work mounting method, characterized in that an underfill resin is applied onto the work and the underfill resin is allowed to enter between the first work and the second work.
特徴とする請求項１記載のワークの実装方法。2. The method for mounting a work according to claim 1, wherein the active substance is an oxygen radical.
を特徴とする請求項１記載のワークの実装方法。 3. The second work is a flip chip.
The method for mounting a work according to claim 1, wherein:
合の前記ケーシング内の圧力は、５０〜１５０パスカル
であることを特徴とする請求項１又は２記載のワークの
実装方法。 4. A field for generating an active substance by plasma
The pressure inside the casing is 50-150 Pascal
The work of claim 1 or 2, characterized in that
How to implement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25653798A JP3473433B2 (en) | 1998-09-10 | 1998-09-10 | Work mounting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25653798A JP3473433B2 (en) | 1998-09-10 | 1998-09-10 | Work mounting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000091373A JP2000091373A (en) | 2000-03-31 |
| JP3473433B2 true JP3473433B2 (en) | 2003-12-02 |
Family
ID=17294013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25653798A Expired - Lifetime JP3473433B2 (en) | 1998-09-10 | 1998-09-10 | Work mounting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3473433B2 (en) |
-
1998
- 1998-09-10 JP JP25653798A patent/JP3473433B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000091373A (en) | 2000-03-31 |
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