JP3477462B2 - Method for manufacturing semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a polymer film deposited by plasma etching after performing plasma etching on an insulating film using an etching gas containing carbon and fluorine. The present invention relates to a method for manufacturing a semiconductor device including a step of performing ashing using oxygen gas or a gas containing oxygen as a main component.

[0002]

2. Description of the Related Art In recent years, as semiconductor integrated circuit devices have been miniaturized, contact holes having a smaller diameter have been required. On the other hand, the contact depth has not changed so much. A technique for forming a contact hole with a high ratio (depth of contact hole / diameter of contact hole) is required.

Further, since the resist film used for forming the hole pattern is also thinned, how to increase the value of (depth of contact hole) / (etching amount of resist film), that is, (contact It is important to increase the value of (etching rate of insulating film where holes are formed) / (etching rate of resist film) = resist selection ratio.

For example, if the selection ratio with respect to the resist is not sufficiently large, most of the resist film is etched by the time the contact hole is formed, so that the contact hole cannot be kept in a good shape. That is,
The upper part of the contact hole may open like a trumpet, or the resist film may disappear and the adjacent contact holes may be connected to each other.

One method for ensuring a sufficient resist selection ratio and maintaining a good contact hole shape is a PFC (perfluorocarbon) gas having a high C / F ratio such as C ₂ F as an etching gas. ₆ gas (C / F
Ratio = 2/6), C ₄ F ₈ gas (C / F ratio = 4/8) or C
_A strong deposited film is formed on the surface of the resist film by using ₅ F ₈ gas (C / F ratio = 5/8) or by adopting a carbon-rich etching condition. It is possible to obtain a resist selectivity.

However, in recent years, since the oxide film etching process having a higher resist selectivity is used, the conventional ashing method can sufficiently etch the polymer film on the resist film surface even if the power is increased. There is a problem that you cannot get the rate.

If fluorine gas is added to oxygen gas for ashing in order to secure an etching rate, problems such as rough surface of the wafer and scraping of the underlying substrate occur.

A conventional method of manufacturing a semiconductor device will be described below with reference to FIGS. 3 (a) to 3 (c) and 4 (a) to 4 (c).

First, as shown in FIG. 3A, an etching stopper film made of a silicon nitride film or the like, a plug made of polysilicon or tungsten, or a base layer 10 made of a lower wiring is formed. A resist pattern 12 having an opening for forming a contact hole is formed on the silicon oxide film 11.

Next, as shown in FIG. 3B, an etching gas 13 containing a fluorocarbon gas as a main component is introduced into an etching chamber (not shown) to etch the silicon oxide film 11. On the other hand, resist pattern 1
By using the mask 2 as a mask, a contact hole 14 is formed in the silicon oxide film 11. By doing so, the reaction product gas 15 such as SiF ₄ , CO ₂ or H ₂ O is generated and vaporized. At this time, the surface of the resist pattern 12, the bottom and walls and walls of the etching chamber of the contact hole 14, carbon or fluorine is supplied from the plasma of the etching gas 13 as a main component _{(C x H y F z)} n Made of a strong polymer film 16
Is deposited.

Next, as shown in FIG. 3 (c), an ashing gas 17 made of oxygen gas to which a fluorocarbon gas is added is introduced into an ashing chamber (not shown) to form a polymer film. Ashing 16 By doing so, oxygen activated by the electric power for plasma generation is combined with carbon which is one of the main components of the polymer film 16 to become carbon dioxide, and fluorine is also vaporized, and these are removed as the reaction product gas 18. .

At this time, as shown in FIG. 4A, the residual polymer 19 is formed on the surface of the silicon oxide film 11.
A large amount of activated oxygen having high energy is generated by the plasma generation power, and the generated activated oxygen having high energy flies to the surface of the silicon oxide film 11, so that fluorine in the residual polymer 19 is generated. While being condensed, it is pushed into the surface portion of the silicon oxide film 11 by the activated oxygen that comes in, so that the first fluorine implantation layer 21 is formed on the surface portion of the silicon oxide film 11. In addition, since the fluorine in the vaporized state contained in the reaction product gas 18 is activated by the plasma generation power and reaches the surface of the silicon oxide film 11 again, it is injected into the surface portion of the silicon oxide film 11, A second fluorine implantation layer 22 is formed on the surface of the silicon oxide film 11.

Further, at this time, the fluorine contained in the polymer film 16 attached to the surface of the resist pattern 12 or the polymer film attached to the wall surface of the chamber and the fluorine contained in the fluorocarbon added to the ashing gas. Is also incident on the bottom of the contact hole 14, the portion of the underlying layer 10 exposed to the contact hole 14 is etched to form the recess 23.

Next, as shown in FIG. 4B, the cleaning liquid 2
The surface of the silicon oxide film 11 and the bottom of the contact hole 14 are wet-cleaned by 4 to remove the residual polymer 19.

[0015]

However, in the wet cleaning process, the residual polymer 19 present on the surface of the silicon oxide film 11 and the bottom surface of the contact hole 14 is removed, but the first polymer on the surface of the silicon oxide film 11 is removed. Since there is a difference in the etching rate in the wet cleaning step between the region where the fluorine-implanted layer 21 and the second fluorine-implanted layer 22 are formed and the region where the second fluorine-implanted layer 22 is not formed, as shown in FIG. As a result, irregularities are formed on the surface of the silicon oxide film 11, and the rough surface portion 25 is generated.

Further, when the residual polymer 19 existing on the surface of the silicon oxide film 11 and the bottom of the contact hole 14 is removed by ashing, in order to secure an ashing rate or to surely remove the residual polymer 19, When a large amount of plasma generation power is applied to perform ashing, the fluorine contained in the residual polymer 19 or the fluorine contained in the polymer deposited on the wall surface of the chamber is driven into the surface of the silicon oxide film 11, and thus wet. Rough surface portion 25 generated in the cleaning process
Will be even larger.

In the ashing process, the silicon oxide film 1 is also used.
In some cases, the fluorine implanted on the surface of No. 1 remains without being completely removed in the cleaning process. In this case, when a resist film made of a chemically amplified resist material is formed on the silicon oxide film 11 in which the contact hole 14 is formed and the resist film is subjected to pattern exposure, the first and second fluorine are formed. Since fluorine contained in the injection layers 21 and 22 deactivates the acid generated in the exposed portion of the resist film, there is also a problem that a resist pattern having a good shape cannot be formed.

In view of the above, the present invention removes the polymer film deposited on the resist film by ashing when the insulating film is subjected to plasma etching using an etching gas containing carbon and fluorine, and thereafter, An object of the present invention is to prevent surface roughness from being formed on the insulating film when the insulating film is wet washed.

[0019]

In order to achieve the above-mentioned object, a first method of manufacturing a semiconductor device according to the present invention is characterized in that after an insulating film is deposited on an underlayer formed on a semiconductor substrate, A step of depositing a peeling layer on the insulating film, and after forming a resist pattern on the peeling layer, using the resist pattern as a mask and using an etching gas containing carbon and fluorine for the peeling layer and the insulating film. The step of performing plasma etching, the step of ashing the polymer film deposited on the resist pattern in the plasma etching step using oxygen gas or a gas containing oxygen as a main component, and the surface portion in the ashing step And a step of removing the release layer on which the fluorine injection layer is formed.

According to the first method of manufacturing a semiconductor device of the present invention, since the peeling layer is formed on the insulating film,
Fluorine contained in the polymer film is injected into the peeling layer, but not into the underlying insulating film. Further, the fluorine injection layer formed on the surface portion of the peeling layer is completely removed together with the peeling layer. Therefore, the surface roughness due to fluorine does not occur in the insulating film in the wet cleaning process performed later.

Further, since the fluorine injection layer is completely removed, a resist film made of a chemically amplified resist material is formed on the insulating film from which the peeling layer has been removed, and the resist film is subjected to pattern exposure. When it is carried out, it is possible to avoid a situation in which the acid (H ⁺ ) contained in the chemically amplified resist material reacts with fluorine to deactivate the acid generated in the exposed portion of the resist film.

In the first method of manufacturing a semiconductor device, the insulating film is made of a silicon oxide film to which no impurities are added, and the peeling layer is a silicon oxide film to which at least one impurity of boron, phosphorus and fluorine is added. It is preferable that

In this way, since the selectivity with respect to the insulating film is obtained when the peeling layer is removed by etching, the peeling layer can be reliably removed.

In the first method of manufacturing a semiconductor device, it is preferable that the insulating film is made of a silicon oxide film and the peeling layer is made of a silicon nitride film.

In this case, since the selectivity with respect to the insulating film is obtained when the peeling layer is removed by etching, the peeling layer can be reliably removed.

In the first method of manufacturing a semiconductor device, it is preferable that the base layer is a silicon nitride film, the insulating film is a silicon oxide film, and the peeling layer is a silicon film.

In this way, since the selectivity with respect to the insulating film is obtained when the peeling layer is removed by etching, the peeling layer can be surely removed, and when the peeling layer is removed by etching, the base layer is etched. It is possible to prevent the situation.

According to a second method of manufacturing a semiconductor device of the present invention, after an insulating film is deposited on a base layer formed on a semiconductor substrate, the insulating film is formed on the insulating film more than the material forming the insulating film. A step of depositing an implantation stopper layer made of a hard insulating material, and forming a resist pattern on the implantation stopper layer, and then etching the implantation stopper layer and the insulating film using the resist pattern as a mask and containing carbon and fluorine. Performing a plasma etching using a gas,
A step of ashing the polymer film deposited on the resist pattern in the plasma etching step using oxygen gas or a gas containing oxygen as a main component;
And a step of removing the fluorine injection layer formed on the surface portion of the injection stopper layer in the ashing step.

According to the second semiconductor device manufacturing method of the present invention, since the implantation stopper layer is deposited on the insulating film, the fluorine contained in the polymer film is implanted into the implantation stopper layer. , Not injected into the insulating film. Also,
Since the implantation stopper layer is made of an insulating material that is harder than the material forming the insulating film, fluorine generated from the polymer film remains in the shallow region of the surface portion of the implantation stopper layer and is not implanted in the deep region. Therefore, after the fluorine-implanted layer is removed, the unevenness of the surface roughness formed on the surface of the implantation stopper layer becomes small. Does not occur.

Further, since the fluorine implantation layer is removed, when a resist film made of a chemically amplified resist material is formed on the insulating film and the resist film is subjected to pattern exposure, the chemically amplified resist film is used. Acid contained in resist material (H
It is possible to avoid the situation where ⁺ ) reacts with fluorine to deactivate the acid generated in the exposed portion of the resist film.

[0031]

BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment) A method for manufacturing a semiconductor device according to a first embodiment of the present invention will be described below with reference to FIGS.

First, as shown in FIG. 1 (a), a silicon oxide film (impurities such as boron, phosphorus, or fluorine) may or may not be added on the silicon substrate 100 as an underlayer. Insulating film 101 made of
And then depositing, for example, 10 nm on the insulating film 101.
A peeling layer 102 made of a silicon nitride film having a thickness of about 50 nm is deposited.

Next, as shown in FIG. 1B, the release layer 1
02, a resist pattern 103 having an opening for forming a contact hole is formed, and then plasma etching is performed on the peeling layer 102 and the insulating film 101 using the resist pattern 103 as a mask and an etching gas of fluorocarbon gas. Then, the contact hole 104 is formed. By doing so, the upper surface of the resist pattern 103 and the contact hole 10
A strong polymer film 105 containing carbon or fluorine as a main component, which is supplied from the plasma of the etching gas, is deposited on the bottom surface and the wall surface of 4.

Next, the polymer film 10 is formed by using an ashing gas made of oxygen gas to which fluorocarbon is added.
5 and the resist pattern 103 are ashed. By doing so, fluorine generated from the polymer film 105 and activated by plasma is injected into the peeling layer 102, so that the peeling layer 102 is released as shown in FIG.
Although the fluorine-implanted layer 106 is formed on the surface portion of, the fluorine is not implanted into the insulating film 101.

Next, when the peeling layer 102 is removed by wet cleaning using hydrofluoric acid, the fluorine injection layer 106 is removed together with the peeling layer 102. Therefore, as shown in FIG. 1D, fluorine is not injected. The insulating film 101 is obtained. In this case, since hydrofluoric acid is used as the cleaning liquid, the peeling layer 102 made of a silicon nitride film is used as the silicon substrate 100.
With respect to the wet cleaning selectivity, the peeling layer 102 can be removed without etching the bottom of the contact hole 104.

According to the first embodiment, since the peeling layer 102 is formed on the insulating film 101, the polymer film 1
The fluorine contained in 05 is injected into the peeling layer 102 but not into the insulating film 101. In addition, the release layer 10
The fluorine-injection layer 105 formed on the surface of the second layer is the peeling layer 1
It is completely removed together with 02. Therefore, in the wet cleaning step, the surface roughness of the insulating film 101 due to fluorine does not occur.

Further, since the fluorine injection layer 105 is completely removed, a resist film made of a chemically amplified resist material is formed on the insulating film 101 from which the peeling layer 102 has been removed, and the resist film is subjected to pattern exposure. In this case, it is possible to prevent the acid (H ⁺ ) contained in the chemically amplified resist material from reacting with fluorine and deactivating the acid generated in the exposed portion of the resist film.

In the first embodiment, the silicon substrate 1 is used as an underlayer on the bottom of the contact hole 104.
However, even if there is an electrode made of a polysilicon film as a base layer, the peeling layer 102 made of a silicon nitride film can be removed by phosphoric acid.

In the case of a structure in which an etching stopper made of a silicon nitride film is exposed as a base layer at the bottom of the contact hole 104, the peeling layer 102 is 10
A thin polysilicon film having a thickness of about 30 nm or 1
It is preferable to use a silicon oxynitride film having a thickness of about 0 to 50 nm.

When a polysilicon film is used as the peeling layer 102, potassium hydroxide can be used as the cleaning liquid. When a silicon oxynitride film (SiON) is used as the peeling layer 102, hydrofluoric acid can be used. However, since the selectivity of the silicon oxynitride film to the silicon nitride film is not so high, the thickness of the peeling layer 102 is large. It is preferable to reduce the size.

(Modification of First Embodiment) A method of manufacturing a semiconductor device according to a modification of the first embodiment of the present invention will be described below with reference to FIGS. .

First, as shown in FIG. 1A, an insulating film 101 made of a silicon oxide film to which impurities such as boron, phosphorus and fluorine are not added is deposited on a silicon substrate 100 as a base layer. Then, on the insulating film 101, at least one impurity of boron, phosphorus and fluorine is added, and a peeling layer 102 made of a silicon oxide film having a thickness of, for example, about 10 nm to 50 nm is deposited.

Next, as shown in FIG. 1B, the release layer 1
02, a resist pattern 103 having an opening for forming a contact hole is formed, and then plasma etching is performed on the peeling layer 102 and the insulating film 101 using the resist pattern 103 as a mask and an etching gas of fluorocarbon gas. Then, the contact hole 104 is formed.

By doing so, the resist pattern 10 is formed.
On the upper surface of 3 and the bottom surface and wall surface of the contact hole 104, a strong polymer film 105 containing carbon or fluorine as a main component supplied from the plasma of etching gas is deposited.

Since this plasma etching is performed on the insulating film 101 to which no impurities are added and the peeling layer 102 made of a silicon oxide film to which impurities are added, the etching process is facilitated.

Next, the polymer film 10 is formed by using an ashing gas consisting of oxygen gas to which fluorocarbon is added.
5 and the resist pattern 103 are ashed. By doing so, fluorine generated from the polymer film 105 and activated by plasma is injected into the peeling layer 102, so that the peeling layer 102 is released as shown in FIG.
Although the fluorine-implanted layer 106 is formed on the surface portion of, the fluorine is not implanted into the insulating film 101.

Next, the fluorine injection layer 106 is removed together with the peeling layer 102 by wet cleaning using hydrofluoric acid. In this case, since the peeling layer 102 made of the silicon oxide film has wet cleaning selectivity with respect to the silicon substrate 100, the peeling layer 102 can be removed without etching the bottom of the contact hole 104.

According to the modification of the first embodiment, since the peeling layer 102 is formed on the insulating film 101, the fluorine contained in the polymer film 105 is injected into the peeling layer 102. It is not injected into the film 101. Further, the fluorine injection layer 106 formed on the surface of the peeling layer 102 is completely removed together with the peeling layer 102. Therefore, in the wet cleaning step, the surface roughness of the insulating film 101 due to fluorine does not occur.

Further, since the fluorine implantation layer 106 is completely removed, a resist film made of a chemically amplified resist material is formed on the insulating film 101 from which the peeling layer 102 has been removed, and the resist film is subjected to pattern exposure. In this case, it is possible to prevent the acid (H ⁺ ) contained in the chemically amplified resist material from reacting with fluorine and deactivating the acid generated in the exposed portion of the resist film.

In the modification of the first embodiment,
Although the peeling layer 102 is removed by wet cleaning using hydrofluoric acid, it may be removed by vapor-phase hydrofluoric acid instead.

Further, in the modification of the first embodiment, the silicon substrate 100 as the underlying layer is exposed at the bottom of the contact hole 104, but instead of this, at the bottom of the contact hole 104, The underlying layer may have a structure in which an etching stopper made of a silicon nitride film or an electrode made of a polysilicon film is exposed.

(Second Embodiment) A method for manufacturing a semiconductor device according to a second embodiment of the present invention will be described below with reference to FIG.
A description will be given with reference to (a) to (d).

First, as shown in FIG. 2A, a silicon oxide film (for example, a silicon oxide film to which an impurity of at least one of boron, phosphorus and fluorine is added) is formed on a silicon substrate 200 as an underlayer. (BPSG film or FSG film)
After depositing the insulating film 201 made of, an implantation stopper layer 202 made of a hard silicon oxide film not added with impurities and having a thickness of about 10 to 50 nm is deposited on the insulating film 201. As the hard silicon oxide film, a plasma TEOS film or a HDP-NSG film (Non-doped Silicate Grass deposited by high density plasma)
Etc. Insulating film 201 and injection stopper layer 202
When both and are made of a silicon oxide film, it is possible to continuously form the film, so that it is not necessary to add a step.

Next, as shown in FIG. 2B, a resist pattern 203 having an opening for forming a contact hole is formed on the injection stopper layer 202, and then the injection stopper layer 202 and the insulating film 201 are removed. Then, the contact hole 204 is formed by performing plasma etching using the resist pattern 203 as a mask and an etching gas made of fluorocarbon. By doing so, a strong polymer film 205 containing carbon or fluorine as a main component supplied from the plasma of the etching gas is deposited on the upper surface of the resist pattern 203 and the bottom surface and the wall surface of the contact hole 204.

Since this plasma etching is performed on the insulating film 201 made of an impurity-added silicon oxide film and the implantation stopper layer 202 made of an undoped silicon oxide film, the etching process is easy. become.

Next, the polymer film 20 is formed by using an ashing gas consisting of oxygen gas to which fluorocarbon is added.
5 and the resist pattern 203 are ashed. By doing so, the fluorine generated from the polymer film 205 and activated by plasma is injected into the injection stopper layer 2
2C, the fluorine implantation layer 206 is formed on the surface portion of the implantation stopper layer 202 as shown in FIG. 2C, but the implantation stopper layer 202 is hard because no impurities are added. Fluorine implantation depth (fluorine implantation layer 20
The thickness 5) becomes shallower and fluorine is not implanted into the insulating film 201.

Next, as shown in FIG. 2D, the fluorine-implanted layer 206 is wet-cleaned with weak hydrofluoric acid or ammonia-hydrogen peroxide mixture, and the fluorine-implanted layer 206 is exposed in the contact hole 204. Remove to the extent that there is no step. In this wet cleaning step, the fluorine implantation layer 206 is mainly removed due to the difference in etching rate between the fluorine implantation layer 206 and the implantation stopper layer 202 made of a silicon oxide film to which impurities are not added.

According to the second embodiment, since the implantation stopper layer 202 made of a hard silicon oxide film to which no impurity is added is provided on the insulating film 201 to which an impurity is added, the injection stopper layer 202 is removed from the polymer film 205. The generated fluorine stays in the shallow region of the surface portion of the implantation stopper layer 202,
It is not implanted in deep areas. Therefore, after the fluorine implantation layer 206 is removed by wet cleaning, the unevenness of the surface roughness formed on the surface portion of the implantation stopper layer 202 becomes small.

Further, since the fluorine injection layer 206 is removed, when a resist film made of a chemically amplified resist material is formed on the insulating film 201 and the resist film is subjected to pattern exposure, the chemically amplified resist is used. It is possible to avoid a situation in which the acid (H ⁺ ) contained in the material reacts with fluorine to deactivate the acid generated in the exposed portion of the resist film.

In the second embodiment, the silicon substrate 200 is exposed as a base layer at the bottom of the contact hole 204, but instead of this, silicon nitride is used as a base layer at the bottom of the contact hole 204. The structure may be such that the etching stopper made of a film, the electrode made of a polysilicon film, or the wiring made of a metal film is exposed.

When it is difficult to remove the peeling layer or the fluorine injection layer by wet cleaning, surface polishing by CMP is also effective.

[0062]

According to the first method of manufacturing a semiconductor device of the present invention, the fluorine-implanted layer formed on the surface of the peeling layer is completely removed together with the peeling layer. The surface roughness due to fluorine does not occur in the insulating film.

Further, since the fluorine-implanted layer is completely removed, when a resist film made of a chemically amplified resist material is formed on the insulating film from which the peeling layer has been removed, an acid generated in the exposed portion of the resist film is generated. It is possible to avoid the situation of being deactivated.

According to the second semiconductor device manufacturing method of the present invention, since the fluorine generated from the polymer film remains in the shallow region of the surface portion of the implantation stopper layer, the implantation stopper layer is removed after the fluorine implantation layer is removed. Since the unevenness of the surface roughness formed on the surface portion of 1 is reduced, the surface roughness due to fluorine does not occur in the insulating film in the wet cleaning step performed later.

Further, since the fluorine-implanted layer is removed, when a resist film made of a chemically amplified resist material is formed on the insulating film from which the peeling layer has been removed, the acid generated in the exposed portion of the resist film is lost. It is possible to avoid the situation of being alive.

[Brief description of drawings]

1A to 1D are cross-sectional views showing respective steps of a method for manufacturing a semiconductor device according to a first embodiment of the present invention and a modification thereof.

2A to 2D are cross-sectional views showing respective steps of a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

3A to 3C are cross-sectional views showing respective steps of a conventional method for manufacturing a semiconductor device.

4A to 4C are cross-sectional views showing respective steps of a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

100 silicon substrate 101 insulating film 102 release layer 103 resist pattern 104 contact holes 105 polymer membrane 106 Fluorine injection layer 200 Silicon substrate 201 insulating film 202 injection stopper layer 203 resist pattern 204 contact holes 205 polymer membrane 206 Fluorine injection layer

─────────────────────────────────────────────────── ─── Continued Front Page (51) Int.Cl. ⁷ Identification Code FI H01L 21/28 H01L 21/30 572A 21/768 21/90 CA

Claims (5)

(57) [Claims] 1. A step of depositing an insulating film on a base layer formed on a semiconductor substrate, and a step of depositing a release layer on the insulating film, and a step of forming a resist pattern on the release layer. A step of performing plasma etching on the release layer and the insulating film using the resist pattern as a mask and using an etching gas containing carbon and fluorine; and a polymer deposited on the resist pattern in the plasma etching step. with respect to the film, and performing ashing using a gas mainly containing oxygen gas or oxygen, and removing the release layer fluorine implanted layer is formed in a surface portion in the ashing step, the In the step of removing the release layer, the release layer is
A method for manufacturing a semiconductor device, which has selectivity with respect to an underlayer . 2. The insulating film is made of a silicon oxide film to which no impurity is added, and the peeling layer is made of a silicon oxide film to which at least one impurity of boron, phosphorus and fluorine is added. The method of manufacturing a semiconductor device according to claim 1, wherein the method is characterized in that: 3. The method of manufacturing a semiconductor device according to claim 1, wherein the insulating film is made of a silicon oxide film, and the peeling layer is made of a silicon nitride film. 4. The semiconductor device according to claim 1, wherein the base layer is a silicon nitride film, the insulating film is a silicon oxide film, and the peeling layer is a silicon film. Production method. 5. After depositing an insulating film on a base layer formed on a semiconductor substrate, an injection stopper layer made of an insulating material harder than a material forming the insulating film is deposited on the insulating film. And a resist pattern is formed on the implantation stopper layer, and then plasma etching is performed on the implantation stopper layer and the insulating film using the resist pattern as a mask and an etching gas containing carbon and fluorine. A step of ashing the polymer film deposited on the resist pattern in the plasma etching step using oxygen gas or a gas containing oxygen as a main component; and the implantation stopper layer in the ashing step. and a step of removing fluorine injection layer formed on the surface portion of the step of removing the fluorine implantation layer Oite, said injection scan
The method of manufacturing a semiconductor device, wherein the topper layer has selectivity with respect to the underlayer . 6. A step of removing the release layer, a wet washing
The method for manufacturing a semiconductor device according to claim 1, wherein the method is performed by using surface cleaning by cleaning or CMP . 7. The step of removing the fluorine-implanted layer is a wafer.
6. The method of manufacturing a semiconductor device according to claim 5, wherein the method is performed by using a cleaning process or surface polishing by CMP . 8. after the step of removing the fluorine implantation layer
And a register made of a chemically amplified resist material on the insulating film.
8. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of performing pattern exposure on the resist film after forming the strike film .