JP3496978B2 - Driver circuit for semiconductor test equipment - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a driver circuit capable of coping with high speed in a semiconductor test apparatus. 2. Description of the Related Art A driver circuit for a semiconductor test apparatus has a limitation in terms of a circuit which cannot be operated at high speed. To increase the speed, it was necessary to increase the current of the driver circuit. However, if the current of the conventional driver circuit was increased, the circuit could be broken due to an increase in power consumption. FIG. 3 shows a conventional driver circuit for a semiconductor test apparatus. To speed up the output of a driver for a semiconductor test device such as a VLSI, the current sources I11.5, I1211, I21
12. The current source I22.6 must be increased, and there is a limit to speeding up due to the power limitation of the driver circuit. [0003] This has the following disadvantages. To speed up the driver circuit for semiconductor test equipment, the current of the driver circuit must be increased,
The speed could not be increased due to circuit limitations. It was not possible to increase the speed simply by changing the circuit wiring and changing the circuit constants.
In order to speed up the driver circuit for semiconductor test equipment,
If the method of increasing the circuit power is adopted, the current of the circuit becomes large, so that the heat radiation of the circuit becomes a serious problem, and the heat radiation of the circuit cannot be caught by air cooling, and a method of cooling is required. When the current of the circuit increases in order to increase the speed of the driver circuit for the semiconductor test apparatus, the semiconductor test apparatus itself becomes a large current type, so that the entire apparatus becomes abnormally large and the economic effect is impaired. Means for solving the problems are as follows. (A) A detection circuit 1 comprising C1 and QX11 for detecting a transition time of an output voltage VP7 of a diode bridge circuit. And a detection circuit 2 comprising C2 and QX21
(A) At the time of rising, the current of the rising current source is increased and the falling current is reduced.
1, a current increasing / decreasing circuit 3 composed of DX11, QX12, and QX13. At the time of falling, the current of the current source for falling is increased, and the current for rising is reduced.
2, a driver circuit for a semiconductor test apparatus, provided with a current increasing / decreasing circuit 4 composed of DX21, QX22, and QX23, and configured as described above. Next, a circuit 1 for detecting the transition time of the output voltage VP7 of the diode bridge circuit, which describes the operation of the present invention.
And the detection circuit 2 detects the transition time of the output voltage VP7. The current increasing / decreasing circuit 3 increases the current of the rising current source when rising, and reduces the falling current, and the current increasing / decreasing circuit 4 increases the current of the falling current source when falling, The transition time is efficiently speeded up by an action such as reducing the current of the device. FIG. 1 shows an electric circuit according to an embodiment of the present invention.
Shown in (1) Detection circuit 1 including capacitor C1 and transistor QX11, and capacitor C2 and transistor QX2
1 detects a transition time of the output voltage VP7 of the diode bridge circuit. For example,
At the time of rising, the rising portion is detected by C1 and QX11, and replaced with a change in the current IC1. At the time of falling, the falling part is detected by C2 and QX21, and the change in the current IC2 is changed. The change in the current IC1 is given by the following equation: = (δVp / δ)
t) × C1 The change of the current IC2 is given by the following equation = (δVp / δ)
t) × C2 (2) In the current increasing / decreasing circuit 3 including the resistor RX1, the diode DX11, the transistor QX12, and the transistor QX13, at the time of rising, the current of the rising current source is increased, and the falling current is decreased. The resistance R
X2, a diode DX21, a transistor QX22, and a transistor QX23.
At the time of the fall, the current of the fall current source is increased, and the rise current is decreased. Therefore, it was possible to efficiently operate the transition time and cope with an increase in the speed of the target driver circuit without flowing a large current. For example, when increasing the current at the rising portion, the current Ip1 is given by the following equation. [VF (DX11) + VRX1-VBE (QX12)]
/ R11 = [VF (DX11) -VBE (QX12)
+ RX1 (I11 + (δVp / δt) X C1] / R
11 (3) FIG. 2 shows a change in the output voltage VP.7 of the diode bridge, a change in the current of ICs 1 and 8, a change in the steady-state current I1.9, and a change in the current increase / decrease IP1.10. [0007] The present invention is configured as described above, and has the following effects. (1) In order to increase the speed of a driver circuit for a semiconductor test device, the currents I11, 5, I2, and 6 of the circuit must be increased, and this is different from the conventional technology that could not be increased due to the limitation of circuit power. . In the present invention, the steady-state current I1 · 9 is set at the normal point and the output voltage VP7 of the diode bridge circuit is set.
By detecting the transition time of the output voltage VP7, the function of a current increasing / decreasing circuit that supplies a driver current with good timing at the transition time of the rise and fall of the output voltage VP7
It has become possible to speed up the driver circuit without constantly flowing a large steady current. (2) A small, high-performance, and economically efficient driver for semiconductor test equipment that has no circuit heat dissipation problem because it has a circuit configuration that does not require a large steady-state current to flow in order to speed up the driver circuit. Circuits can now be provided.

[Brief description of the drawings] FIG. 1 is an electric circuit diagram according to an embodiment of the present invention. FIG. 2 is a diagram of voltage and current changes according to an embodiment of the present invention. FIG. 3 is a prior art electrical circuit diagram according to an embodiment; [Explanation of symbols] 1 Detection circuit 2 Detection circuit 3 Current increase / decrease circuit 4 Current increase / decrease circuit 5 I11 current source 6 I22 current source 7. Diode bridge output voltage VP 8 Detection current IC1 by capacitor C1 9 Steady-state current I1 10 Rising current IP1 11 I12 current source 12 I21 current source

Claims (1)

(57) A driver circuit for a semiconductor test apparatus which receives an input voltage signal (VP) and supplies a buffered output voltage VOUT which is current-buffered to a semiconductor device under test, comprising: A first detection circuit (1) for detecting a transition time on a rising side which transits upon receiving the signal (VP), and a second detection circuit for detecting a transition time on a falling side which transits upon receiving the input voltage signal (VP) A first current increasing / decreasing circuit (3) for increasing the current of the rising current source at the time of rising and decreasing the falling current based on the first detecting circuit (1) based on the first detecting circuit (1). A second current increasing / decreasing circuit (4) for increasing the current of the falling current source at the time of falling and reducing the rising current based on the second detection circuit (2); 1 detection circuit (1 The first capacitor (C1) and comprises a third transistor and a (QX11), the input terminal of the third transistor is input voltage signal (V
P), the emitter end of the third transistor is connected to one end of the first capacitor, and the other end of the first capacitor is connected to circuit ground to detect the transition time on the rising side. The second detection circuit (2) supplies a second capacitor (C2) and a fourth transistor (QX21) from the output terminal of the third transistor to the first current increasing / decreasing circuit. The input terminal of the fourth transistor is connected to the input voltage signal (V
P), the emitter of the fourth transistor is connected to one end of the second capacitor, and the other end of the second capacitor is connected to the circuit ground to detect the transition time on the falling side. From the output terminal of the fourth transistor to the second current increasing / decreasing circuit, wherein the first current increasing / decreasing circuit (3) includes a first resistor (RX1),
A first diode (DX11) and a fifth transistor (QX13), wherein the first resistor and the first diode are connected in series and connected to a positive power supply terminal and an output terminal of the third transistor; The input terminal of the fifth transistor is connected to the output terminal of the third transistor, the emitter terminal of the fifth transistor is connected to a positive power supply via a resistor, and the output terminal of the fifth transistor is connected to the The second current increasing / decreasing circuit (4) is connected to a second resistor (RX2);
A second diode (DX21) and a sixth transistor (QX23), wherein the second resistor and the second diode are connected in series and connected to a negative power supply terminal and an output terminal of the fourth transistor; The input terminal of the sixth transistor is connected to the output terminal of the fourth transistor, the emitter terminal of the sixth transistor is connected to a negative power supply via a resistor, and the output terminal of the sixth transistor is connected to the negative terminal of the sixth transistor. A driver circuit for a semiconductor test apparatus, wherein the driver circuit is connected to an input terminal of a second transistor.