JP3500789B2 - Inspection method for semiconductor wafer surface - Google Patents
Inspection method for semiconductor wafer surfaceInfo
- Publication number
- JP3500789B2 JP3500789B2 JP21514095A JP21514095A JP3500789B2 JP 3500789 B2 JP3500789 B2 JP 3500789B2 JP 21514095 A JP21514095 A JP 21514095A JP 21514095 A JP21514095 A JP 21514095A JP 3500789 B2 JP3500789 B2 JP 3500789B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- state
- wafer
- inspecting
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 18
- 238000007689 inspection Methods 0.000 title claims description 12
- 238000001179 sorption measurement Methods 0.000 claims description 8
- 238000005259 measurement Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【発明の属する技術分野】この発明は半導体ウェーハ表
面の検査方法、詳しくは半導体ウェーハ表面粗さの検査
技術に関する。TECHNICAL FIELD The present invention relates to a semiconductor wafer table.
The present invention relates to a method for inspecting a surface , more specifically, a technique for inspecting the surface roughness of a semiconductor wafer.
【０００２】[0002]
【従来の技術】従来の半導体ウェーハ表面の平坦度の測
定は、以下の装置・方法で行っていた。すなわち、図８
に示すように、測定ステージ８１上に半導体ウェーハＷ
ｆを吸着せずに単に載置した状態（フリーマウント方
式）で、検査・測定する方法（表面基準検査）である。
また、この検査装置としては、ＡＦＭ（原子間力顕微
鏡），魔鏡観察装置，サーフコム，チャップマン，ＷＹ
ＫＯ等が知られている。2. Description of the Related Art Conventionally, the flatness of the surface of a semiconductor wafer has been measured by the following apparatus and method. That is, FIG.
As shown in FIG.
This is a method (surface reference inspection) of inspecting and measuring in a state where it is simply placed without adsorbing f (free mounting method).
As the inspection device, AFM (atomic force microscope), magic mirror observation device, surfcom, chapman, WY
KO etc. are known.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、この方
法では、以後のデバイス工程で使用されるステッパでの
測定基準に合致していないという欠点があった。すなわ
ち、図８に示すように、ステッパでは半導体ウェーハＷ
ｆの裏面を吸着して表面を露光する。このため、（Ａ）
に示すように、裏面に凹凸（１μｍ程度）のあるウェー
ハでは、たとえフリーマウント状態では表面が平坦であ
ったとしても、ステッパではピントずれ等が生じてしま
い、その収率に影響を及ぼすという不具合があった。ま
た、（Ｂ）に示すように、表裏面が平行なウェーハで
は、たとえフリーマウント状態では表裏面に凹凸が生じ
たとしても、ステッパではピントが合うこととなる。換
言すると、従来方法では、ウェーハ裏面の状態を含んだ
表面の評価はできなかった。However, this method has a drawback in that it does not meet the measurement standard of the stepper used in the subsequent device process. That is, as shown in FIG.
The back surface of f is adsorbed and the front surface is exposed. Therefore, (A)
As shown in Fig. 3, in the case of a wafer having a concave and convex surface (about 1 µm) on the back surface, even if the surface is flat in the free mount state, the stepper causes out-of-focus, etc., which affects the yield. was there. Further, as shown in (B), in a wafer having front and back surfaces parallel to each other, even if unevenness occurs on the front and back surfaces in the free mount state, the stepper will be in focus. In other words, the conventional method could not evaluate the front surface including the state of the back surface of the wafer.
【０００４】[0004]
【発明の目的】そこで、この発明は、今までフリーマウ
ント状態でしか評価できなかったウェーハに対して、そ
の吸着面（裏面）の凹凸を含んだ形で評価可能となる表
面検査技術を提供することを、その目的としている。す
なわち、真空吸着タイプのステッパでの露光状態を再現
した形で評価することができる方法を提供することを、
その目的としている。SUMMARY OF THE INVENTION Therefore, the present invention provides a surface inspection technique capable of evaluating a wafer, which has been evaluated only in a free mount state up to now, in a form including irregularities on its suction surface (back surface). That is the purpose. That is, to provide a method capable of evaluating the exposure state in a vacuum adsorption type stepper in a reproduced form,
Its purpose is.
【０００５】[0005]
【課題を解決するための手段】請求項１に記載した発明
は、半導体ウェーハの裏面を吸着ステージの平坦面に密
着させて重ね合わせる工程と、この状態で半導体ウェー
ハを吸着ステージにより吸着する工程と、この吸着した
状態で半導体ウェーハ表面の状態を検査する工程と、こ
の吸着ステージで半導体ウェーハの吸着を解除する工程
と、この吸着を解除した状態で半導体ウェーハ表面の状
態を検査する工程とを含む半導体ウェーハ表面の検査方
法である。According to a first aspect of the present invention, there is provided a step of adhering a back surface of a semiconductor wafer to a flat surface of an adsorption stage so as to be superposed thereon, and a step of adsorbing the semiconductor wafer by the adsorption stage in this state. This adsorbed
The process of inspecting the state of the semiconductor wafer surface
Process of releasing the semiconductor wafer from the suction stage
The state of the semiconductor wafer surface is
A method of inspecting the surface of a semiconductor wafer, including the step of inspecting the condition .
【０００６】請求項２に記載した発明は、上記半導体ウ
ェーハ表面の状態は魔鏡観察で検査する請求項１に記載
の半導体ウェーハ表面の検査方法である。The invention described in claim 2 is the method for inspecting a surface of a semiconductor wafer according to claim 1, wherein the condition of the surface of the semiconductor wafer is inspected by magic mirror observation.
【０００７】[0007]
【作用】請求項１〜請求項２に記載の発明では、真空吸
着を解除することで半導体ウェーハの表面の平坦度を測
定・検出することができるとともに、真空吸着すること
でその表裏面の平行度を正確に検出することができる。
そして、後者の場合、ステッパでの露光状態に近似した
状態での平坦度の測定・検査を行うことができる。換言
すると、吸着ステージにウェーハを吸着することで裏面
基準での測定を行い、吸着させないことで表面基準での
測定をそれぞれ行うものである。この表面粗さの測定に
は、例えば魔鏡観察（微小表面凹凸検出装置）・非接触
粗さ計（チャップマン社製・ＷＹＫＯ社製のＴＯＰＯ３
Ｄ）・接触粗さ計（サーフコム）・ＡＦＭ（原子間力顕
微鏡）等の装置を使用することができる。According to the inventions of claims 1 and 2 , the flatness of the surface of the semiconductor wafer can be measured and detected by releasing the vacuum suction, and the vacuum suction allows the front and back surfaces to be parallel. The degree can be detected accurately.
In the latter case, the flatness can be measured and inspected in a state similar to the exposure state of the stepper. In other words, the wafer is adsorbed to the adsorption stage to perform the measurement based on the back surface, and the wafer is not adsorbed to perform the measurement based on the surface. The surface roughness can be measured by, for example, observing a magic mirror (microscopic surface unevenness detecting device), non-contact roughness meter (TOPO3 manufactured by Chapman, WYKO).
D) -A device such as a contact roughness meter (surfcom) or AFM (atomic force microscope) can be used.
【０００８】[0008]
【発明の実施の形態】図１〜図４は、この発明の一実施
例に係るシリコンウェーハ表面の検査の方法を示してい
る。この実施例では、ウェーハの表面粗さの観察に魔鏡
観察を用いている。すなわち、図１，図３に示すシリコ
ンウェーハＷｆについて、それぞれ鏡面研磨後、吸着ス
テージＢＳにおいて一定条件で真空吸着してまたは吸着
せずに、魔鏡観察を行った結果を、それぞれ図２，図４
に示す。これらの図において示すように、平行度の高い
ウェーハＷｆ（図１）では真空吸着を行うと（図２の
Ｂ）、行わない場合（図２のＡ）に比較してより表面の
凹凸は小さく観察される。また、表面を平坦にポリッシ
ュしたウェーハＷｆ（図３）では、真空吸着しての魔鏡
観察結果（図４のＢ）では裏面の凹凸の影響が観察され
るが、吸着解除した観察では（図４のＡ）表面のみの凹
凸を観察することができる。1 to 4 show a method of inspecting a surface of a silicon wafer according to an embodiment of the present invention. In this embodiment, magic mirror observation is used to observe the surface roughness of the wafer. That is, with respect to the silicon wafer Wf shown in FIG. 1 and FIG. 3, the results obtained by performing a magic mirror observation after mirror polishing and then with or without vacuum suction under a constant condition on the suction stage BS are shown in FIGS. Four
Shown in. As shown in these figures, when the wafer Wf having a high degree of parallelism (FIG. 1) is subjected to vacuum suction (B in FIG. 2), the surface unevenness is smaller than that in the case without vacuum suction (A in FIG. 2). To be observed. Further, in the wafer Wf (FIG. 3) whose surface is polished flat, the effect of the unevenness on the back surface is observed in the magic mirror observation result after vacuum suction (B in FIG. 4), but in the observation after suction removal (FIG. It is possible to observe the unevenness only on the surface A) of 4.
【０００９】図５はこの魔鏡観察装置を示している。こ
の装置は、点光源５１、試料表面に放射状光を集光する
光学系５２、試料表面からの反射光を集光・撮像するＣ
ＣＤカメラ５３、撮像結果を表示するテレビモニタ５４
等で構成されている。この装置では、検査面から反射し
た光の分布をテレビカメラ５３で捕らえ、テレビモニタ
５４に光の分布像として表現するものである。凹み部分
（図２，図４の多くの微小円で示す部分）は光が集まる
ために明るく映し出される。FIG. 5 shows this magic mirror observation device. This apparatus includes a point light source 51, an optical system 52 that collects radial light on the sample surface, and C that collects and images reflected light from the sample surface.
CD camera 53, TV monitor 54 for displaying the imaging result
Etc. In this device, the distribution of the light reflected from the inspection surface is captured by the television camera 53 and is displayed on the television monitor 54 as a distribution image of the light. The concave portion (the portion indicated by many small circles in FIGS. 2 and 4) is brightly projected because light is collected.
【００１０】図６はこの発明に係る表面検査装置の他の
実施例を示している。この装置では検査装置としてＡＦ
Ｍ（またはサーフコム）を用いた例である。以下説明す
ると、このＡＦＭでは、てこを利用したプローブ６１
で、真空吸着ステージ６２に搭載したウェーハＷｆの表
面をトレースすることにより、横分解能の高い表面粗さ
の観察を行うことができる。FIG. 6 shows another embodiment of the surface inspection apparatus according to the present invention. This device uses AF as an inspection device.
This is an example using M (or Surfcom). Explaining below, in this AFM, a probe 61 using a lever is used.
By tracing the surface of the wafer Wf mounted on the vacuum suction stage 62, it is possible to observe the surface roughness with high lateral resolution.
【００１１】図７はこの発明に係る表面検査装置のさら
に他の実施例を示している。この装置では検査装置とし
てチャップマン社製またはＷＹＫＯ社製の非接触粗さ計
をを用いた例である。以下装置構成を説明すると、吸着
ステージ７１に載置されたウェーハＷｆ表面から所定間
隔だけ離間して測定部材７２を配設し、この測定部材７
２からレーザ光を照射してその反射光に基づいて表面の
凹凸を測定するものである。この装置によれば、その横
分解能が高いため、高感度での測定ができるという利点
がある。FIG. 7 shows still another embodiment of the surface inspection apparatus according to the present invention. This device is an example in which a non-contact roughness meter manufactured by Chapman or WYKO is used as an inspection device. The structure of the apparatus will be described below. The measuring member 72 is arranged at a predetermined distance from the surface of the wafer Wf placed on the suction stage 71.
Laser light is emitted from No. 2 and the unevenness of the surface is measured based on the reflected light. This device has an advantage that it can perform measurement with high sensitivity because its lateral resolution is high.
【００１２】[0012]
【発明の効果】この発明では、半導体ウェーハに対して
吸着面（裏面）の凹凸を含んだ形で評価可能となる。す
なわち、真空吸着タイプのステッパでの露光状態を再現
した形で半導体ウェーハを評価することができる。According to the present invention, it is possible to evaluate a semiconductor wafer in a form including irregularities on the suction surface (back surface). That is, the semiconductor wafer can be evaluated in a form in which the exposure state of the vacuum suction type stepper is reproduced.
【図１】この発明の一実施例に係る検査対象である半導
体ウェーハを示す模式図である。FIG. 1 is a schematic view showing a semiconductor wafer to be inspected according to an embodiment of the present invention.
【図２】この発明の一実施例に係る半導体ウェーハの魔
鏡観察結果を示す模式図である。FIG. 2 is a schematic view showing a magic mirror observation result of a semiconductor wafer according to an embodiment of the present invention.
【図３】この発明の一実施例に係る検査対象である半導
体ウェーハを示す模式図である。FIG. 3 is a schematic view showing a semiconductor wafer to be inspected according to an embodiment of the present invention.
【図４】この発明の一実施例に係る半導体ウェーハの魔
鏡観察結果を示す模式図である。FIG. 4 is a schematic diagram showing a magic mirror observation result of a semiconductor wafer according to an embodiment of the present invention.
【図５】この発明の一実施例に係る魔鏡観察装置を示す
模式図である。FIG. 5 is a schematic view showing a magic mirror observation device according to an embodiment of the present invention.
【図６】この発明の他の実施例に係る検査装置の一部を
示す模式図である。FIG. 6 is a schematic view showing a part of an inspection device according to another embodiment of the present invention.
【図７】この発明の他の実施例に係る検査装置の一部を
示す模式図である。FIG. 7 is a schematic view showing a part of an inspection apparatus according to another embodiment of the present invention.
【図８】従来の不具合を説明するための模式図である。FIG. 8 is a schematic diagram for explaining a conventional problem.
ＢＳ 吸着ステージ、Ｗｆ シリコンウェーハ、 BS adsorption stage, Wf silicon wafer,
───────────────────────────────────────────────────── フロントページの続き (72)発明者 黒田 幸夫 東京都千代田区大手町１丁目５番１号 三菱マテリアルシリコン株式会社内 (56)参考文献 特開 平１−292206（ＪＰ，Ａ) 特開 平７−260700（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G01B 11/00 - 11/30 H01L 21/66 G01N 21/88 - 21/956 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yukio Kuroda 1-5-1, Otemachi, Chiyoda-ku, Tokyo Mitsubishi Materials Silicon Co., Ltd. (56) Reference JP-A-1-292206 (JP, A) JP Flat 7-260700 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) G01B 11/00-11/30 H01L 21/66 G01N 21/88-21/956
Claims (2)
平坦面に密着させて重ね合わせる工程と、 この状態で半導体ウェーハを吸着ステージにより吸着す
る工程と、この吸着した状態で半導体ウェーハ表面の状態を検査す
る工程と、 この吸着ステージで半導体ウェーハの吸着を解除する工
程と、 この吸着を解除した状態で半導体ウェーハ表面の状態を
検査する工程と を含む半導体ウェーハ表面の検査方法。1. A step of adhering a back surface of a semiconductor wafer to a flat surface of an adsorption stage so as to be superposed thereon, a step of adsorbing a semiconductor wafer by an adsorption stage in this state, and an inspection of a state of the front surface of the semiconductor wafer in this adsorption state. You
And the process of releasing the suction of the semiconductor wafer at this suction stage.
The state of the surface of the semiconductor wafer is
A method for inspecting the surface of a semiconductor wafer, including the step of inspecting.
察により検査する請求項１に記載の半導体ウェーハ表面
の検査方法。2. The method for inspecting a surface of a semiconductor wafer according to claim 1, wherein the state of the surface of the semiconductor wafer is inspected by observing with a magic mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21514095A JP3500789B2 (en) | 1995-07-31 | 1995-07-31 | Inspection method for semiconductor wafer surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21514095A JP3500789B2 (en) | 1995-07-31 | 1995-07-31 | Inspection method for semiconductor wafer surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0942947A JPH0942947A (en) | 1997-02-14 |
| JP3500789B2 true JP3500789B2 (en) | 2004-02-23 |
Family
ID=16667363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21514095A Expired - Lifetime JP3500789B2 (en) | 1995-07-31 | 1995-07-31 | Inspection method for semiconductor wafer surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3500789B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005135977A (en) * | 2003-10-28 | 2005-05-26 | Renesas Technology Corp | Semiconductor device manufacturing method and semiconductor manufacturing apparatus |
-
1995
- 1995-07-31 JP JP21514095A patent/JP3500789B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0942947A (en) | 1997-02-14 |
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