JP3502783B2 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereofInfo
- Publication number
- JP3502783B2 JP3502783B2 JP07118599A JP7118599A JP3502783B2 JP 3502783 B2 JP3502783 B2 JP 3502783B2 JP 07118599 A JP07118599 A JP 07118599A JP 7118599 A JP7118599 A JP 7118599A JP 3502783 B2 JP3502783 B2 JP 3502783B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- bare chip
- circuit board
- printed circuit
- chip component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
Description
【0001】[0001]
【発明の属する技術分野】この発明は、LSIのベアチ
ップ部品とプリント基板とで構成される半導体装置およ
びその半導体装置の製造方法に関し、特に、接続信頼性
の向上を実現する半導体装置およびその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device composed of an LSI bare chip component and a printed circuit board, and a method of manufacturing the semiconductor device, and more particularly, to a semiconductor device and a method of manufacturing the semiconductor device that improve connection reliability. Regarding
【0002】[0002]
【従来の技術】LSIのベアチップ部品とプリント基板
とで構成されて、当該ベアチップ部品のチップ電極に形
成する突出電極を当該プリント基板の基板電極と電気的
に接続しつつ、当該ベアチップ部品と当該プリント基板
とを接着剤を使って固着することで構成される半導体装
置の実装構造が知られている。この半導体装置の実装構
造において、突出電極と基板電極との接合信頼性は重要
な要素である。2. Description of the Related Art A bare chip component of an LSI and a printed circuit board are formed, and a protruding electrode formed on a chip electrode of the bare chip component is electrically connected to a substrate electrode of the printed circuit board while the bare chip component and the printed circuit board are printed. 2. Description of the Related Art A mounting structure of a semiconductor device is known which is formed by fixing a substrate and an adhesive using an adhesive. In this semiconductor device mounting structure, the joint reliability between the protruding electrode and the substrate electrode is an important factor.
【0003】ところで、ベアチップ材料であるシリコン
の熱膨張係数は約4ppm/゜Cであるのに対して、有
機材であるプリント基板の熱膨張係数は約15ppm/
゜Cである。また、ベアチップ部品と基板間に充填され
ている接着剤は、この二つの異質な材料を機械的に固定
し、熱膨張係数の違いによって発生する接合部分への応
力集中を緩和させる働きがある。さらに、上記半導体装
置の実装構造の場合、はんだや導電ペースト材がないの
で、接着剤の硬化収縮力によって突出電極と基板電極と
の間の接触圧力(接圧)が、電極間の導通を維持する上
で特に重要となる。By the way, the coefficient of thermal expansion of bare chip material silicon is about 4 ppm / ° C, whereas the coefficient of thermal expansion of a printed circuit board which is an organic material is about 15 ppm / ° C.
° C. Further, the adhesive filled between the bare chip component and the substrate has a function of mechanically fixing the two dissimilar materials and alleviating the stress concentration on the joint portion caused by the difference in thermal expansion coefficient. Furthermore, in the case of the mounting structure of the semiconductor device described above, since there is no solder or conductive paste material, the contact pressure (contact pressure) between the protruding electrode and the substrate electrode maintains the conduction between the electrodes due to the curing shrinkage force of the adhesive. It will be especially important in doing so.
【0004】また、エポキシ系接着剤の場合、硬化前は
粘性のある液状の状態である。温度を上げることで、粘
度が低下し、「しゃぶしゃぶ」の状態となり、更に温度
を上昇させることで、主剤のエポキシ樹脂と硬化剤との
化学反応が一気に進む。硬化反応が完了するまで高温状
態を維持し、その後温度を下げていくと、ガラス転移温
度までは、「ゴム状」の柔らかい状態であるが、ガラス
転移温度付近からは接着剤は「硬い」状態となって体積
が収縮し、さらに、樹脂の熱膨張係数で決まる比率で体
積が徐々に小さくなる。In the case of an epoxy adhesive, it is in a viscous liquid state before being cured. When the temperature is raised, the viscosity is lowered to be in a "shabu-shabu" state, and when the temperature is further raised, the chemical reaction between the epoxy resin as the main ingredient and the curing agent proceeds at once. If the temperature is kept high until the curing reaction is completed, and then the temperature is lowered, it is in a “rubbery” soft state up to the glass transition temperature, but the adhesive is in a “hard” state near the glass transition temperature. And the volume shrinks, and the volume gradually decreases at a rate determined by the thermal expansion coefficient of the resin.
【0005】こうした樹脂の収縮によって発生する硬化
収縮力を中心とする応力により、突出電極と基板電極と
の間が引寄せられて、突出電極と基板電極との間の接触
圧力(接圧)が維持されることになる。The stress centered on the curing shrinkage force generated by the shrinkage of the resin draws the space between the protruding electrode and the substrate electrode, so that the contact pressure (contact pressure) between the protruding electrode and the substrate electrode is increased. Will be maintained.
【0006】図10は従来技術の構成図を示すものであ
る。同図(a)において、半導体装置は、LSIのベア
チップ部品51とプリント基板52とで構成されて、当
該ベアチップ部品51のチップ電極53に形成する突出
電極54を当該プリント基板52の基板電極56と電気
的に接続しつつ、当該ベアチップ部品51と当該プリン
ト基板52とを接着剤57を使って固着することで構成
される。FIG. 10 shows a block diagram of the prior art. In FIG. 1A, a semiconductor device is composed of an LSI bare chip component 51 and a printed circuit board 52, and a protruding electrode 54 formed on a chip electrode 53 of the bare chip component 51 is replaced with a substrate electrode 56 of the printed circuit board 52. It is configured by fixing the bare chip component 51 and the printed circuit board 52 with an adhesive 57 while electrically connecting.
【0007】図10(a)に示す構成の半導体装置を製
造する過程は、図11に示すように、ベアチップ部品5
1のチップ電極53に突出電極(バンプ)54を形成
し、プリント基板52のベアチップ部品載置位置に接着
剤を塗布し、突出電極(バンプ)54と基板電極56と
の位置を合わせつつ、ベアチップ部品51を接着剤の塗
布されたプリント基板52に載置し、その載置したベア
チップ部品51を基板電極56が凹むまでプリント基板
52に押圧するとともに、その押圧中に、塗布した接着
剤を硬化させることにより製造する。なお、当然のこと
ながら、その押圧中に突出電極54の先端部も変形す
る。また、その押圧中は加熱処理が行われることは周知
である。As shown in FIG. 11, in the process of manufacturing the semiconductor device having the structure shown in FIG.
A protruding electrode (bump) 54 is formed on the chip electrode 53 of No. 1 and an adhesive is applied to the position where the bare chip component is mounted on the printed circuit board 52, and the protruding electrode (bump) 54 and the substrate electrode 56 are aligned with each other to form a bare chip. The component 51 is placed on the printed circuit board 52 coated with the adhesive, the bare chip component 51 mounted is pressed against the printed circuit board 52 until the substrate electrode 56 is recessed, and the applied adhesive is cured during the pressing. It is manufactured by Of course, the tip portion of the protruding electrode 54 is also deformed during the pressing. It is well known that heat treatment is performed during the pressing.
【0008】上記の製造過程で製造された半導体装置
は、図10(b)に示すように、前記ベアチップ部品5
1のチップ電極53に形成する突出電極54の押圧によ
る変形量において、突出電極の本体部に対して突出する
突出電極の先端部の寸法T11は10〜15μm程度に
突出している。なお、バンプ高さは50〜60μm程度
である。また、前記プリント基板52の基板電極56の
変形量において、凹み量T12は7μm以下程度であ
る。すなわち、基板電極の厚みT13が20〜30μm
に対して1/3以下である。The semiconductor device manufactured in the above manufacturing process has the bare chip component 5 as shown in FIG. 10 (b).
With respect to the amount of deformation of the protruding electrode 54 formed on one chip electrode 53 due to pressing, the dimension T11 of the tip of the protruding electrode protruding from the main body of the protruding electrode is about 10 to 15 μm. The bump height is about 50 to 60 μm. Further, in the deformation amount of the substrate electrode 56 of the printed circuit board 52, the recess amount T12 is about 7 μm or less. That is, the thickness T13 of the substrate electrode is 20 to 30 μm.
Is 1/3 or less.
【0009】上記の製造過程で製造された半導体装置
は、図12に示すように、突出電極54あるいは基板電
極56の変形量が十分でない場合は、突出電極54およ
び基板電極56が本来は塑性領域レベルまで変形するべ
き所を、突出電極54あるいは基板電極56が弾性領域
レベルの変形量になることが考えられる。この場合は、
同図に示すように、半導体装置が熱的ストレス、あるい
は機械的ストレスを受けることにより、膨張や収縮する
ことがあり、突出電極54と基板電極56との間の接触
圧力(接圧)が、確保できず、電極間の導通を維持する
ことができない場合がある。In the semiconductor device manufactured in the above manufacturing process, as shown in FIG. 12, when the amount of deformation of the projecting electrode 54 or the substrate electrode 56 is not sufficient, the projecting electrode 54 and the substrate electrode 56 originally have a plastic region. It is conceivable that the protruding electrode 54 or the substrate electrode 56 has a deformation amount at the elastic region level where it should be deformed to a level. in this case,
As shown in the figure, the semiconductor device may expand or contract due to thermal stress or mechanical stress, and the contact pressure (contact pressure) between the projecting electrode 54 and the substrate electrode 56 is In some cases, it may not be possible to maintain the electrical continuity between the electrodes.
【0010】このように、ベアチップ部品51とプリン
ト基板52とを接着剤57を使って固着することで構成
される半導体装置において、突出電極54と基板電極5
6との間の接触圧力(接圧)が、電極間の導通を維持す
る上で特に重要となり、以下に示すような技術的対応が
望まれる。In this way, in the semiconductor device constituted by fixing the bare chip component 51 and the printed circuit board 52 with the adhesive 57, the protruding electrode 54 and the substrate electrode 5
The contact pressure with 6 (contact pressure) is particularly important for maintaining conduction between the electrodes, and the following technical measures are desired.
【0011】1)突出電極は金で形成されるため、弾性
変形領域は小さく、塑性変形領域が殆どである。したが
って、突出電極に荷重を加えると、突出電極は荷重の値
に応じて潰れる。しかし、突出電極の先端部を構成する
凸部の潰れが進むと、潰れ量は飽和する傾向となる。1) Since the protruding electrode is made of gold, the elastic deformation region is small and the plastic deformation region is almost the same. Therefore, when a load is applied to the protruding electrode, the protruding electrode is crushed according to the value of the load. However, when the protrusion of the protruding electrode forming the tip portion is crushed, the crush amount tends to be saturated.
【0012】2)したがって、低荷重でマウントを行
い、突出電極はまだ潰れる余裕をもった状態で接着剤が
硬化すると、突出電極は接着剤の硬化収縮力によっても
次第に塑性変形をおこして潰れることが予想される。こ
の場合は、接着剤の硬化収縮力は、突出電極と基板電極
との接圧に寄与しなくなる。したがって、突出電極の変
形量が飽和するまで荷重を高めて突出電極を潰すことが
信頼性確保の点で重要となる。2) Therefore, when the adhesive is hardened in a state where mounting is performed under a low load and the protruding electrodes still have a crushing allowance, the protruding electrodes are gradually plastically deformed by the curing shrinkage force of the adhesive and are crushed. Is expected. In this case, the curing shrinkage force of the adhesive does not contribute to the contact pressure between the protruding electrode and the substrate electrode. Therefore, it is important to secure the reliability by increasing the load until the deformation amount of the protruding electrode is saturated and crushing the protruding electrode.
【0013】[0013]
【発明が解決しようとする課題】前記のごとく、従来の
技術では次のような問題点がある。As described above, the conventional techniques have the following problems.
【0014】1)突出電極あるいは基板電極の変形量が
十分でない場合は、突出電極あるいは基板電極が弾性領
域レベルの変形量になることがある。この場合、接着剤
の硬化収縮力は、突出電極と基板電極との接圧に寄与し
なくなり、突出電極と基板電極との間の接触圧力(接
圧)が確保できない場合がある。1) When the amount of deformation of the projecting electrode or the substrate electrode is not sufficient, the amount of deformation of the projecting electrode or the substrate electrode may reach the elastic region level. In this case, the curing shrinkage force of the adhesive does not contribute to the contact pressure between the protruding electrode and the substrate electrode, and the contact pressure (contact pressure) between the protruding electrode and the substrate electrode may not be secured in some cases.
【0015】2)また、半導体装置が熱的ストレス、あ
るいは機械的ストレスを受けることにより、膨張や収縮
することがあり、突出電極と基板電極との間の接触圧力
(接圧)が確保できず、電極間の導通を維持することが
できない場合がある。2) Further, the semiconductor device may expand or contract due to thermal stress or mechanical stress, and contact pressure (contact pressure) between the protruding electrode and the substrate electrode cannot be secured. In some cases, continuity between electrodes cannot be maintained.
【0016】この発明の目的は、突出電極あるいは基板
電極が十分に変形するようにし、接着剤の硬化収縮力に
よって突出電極と基板電極との間の接触圧力(接圧)を
確保し、電極間の導通を維持することができるようにす
る半導体装置と、その製造方法とを提供することにあ
る。An object of the present invention is to allow the protruding electrode or the substrate electrode to be sufficiently deformed, to secure the contact pressure (contact pressure) between the protruding electrode and the substrate electrode by the curing shrinkage force of the adhesive, and It is an object of the present invention to provide a semiconductor device and a manufacturing method thereof capable of maintaining electrical continuity.
【0017】[0017]
【課題を解決するための手段】前記の問題点を解決する
ために、この発明では次のような手段を取る。In order to solve the above problems, the present invention takes the following means.
【0018】突出電極あるいは基板電極が十分に変形す
るように、突出電極の変形量が飽和するまで荷重を高め
て突出電極または/および基板電極を変形させる。In order to sufficiently deform the protruding electrode or the substrate electrode, the load is increased until the deformation amount of the protruding electrode is saturated, and the protruding electrode and / or the substrate electrode is deformed.
【0019】上記の手段を取ることにより、突出電極お
よび基板電極が変形しない飽和領域まで変形させること
ができる。これにより、接着剤の硬化収縮力は、突出電
極と基板電極との接触圧力(接圧)に十分に寄与するこ
とになる。すなわち、接着剤の硬化収縮力は、突出電極
と基板電極との接圧に寄与し、突出電極と基板電極との
間の接触圧力(接圧)を確保することができ、電極間の
導通を維持することができる。By taking the above means, it is possible to deform to the saturated region where the protruding electrode and the substrate electrode are not deformed. Thereby, the curing shrinkage force of the adhesive sufficiently contributes to the contact pressure (contact pressure) between the protruding electrode and the substrate electrode. That is, the curing shrinkage force of the adhesive contributes to the contact pressure between the projecting electrode and the substrate electrode, so that the contact pressure (contact pressure) between the projecting electrode and the substrate electrode can be secured, and the conduction between the electrodes can be maintained. Can be maintained.
【0020】[0020]
【発明の実施の形態】この発明は、次に示したような実
施の形態をとる。BEST MODE FOR CARRYING OUT THE INVENTION The present invention has the following embodiments.
【0021】図1に示すように、半導体装置は、LSI
のベアチップ部品とプリント基板とで構成されて、当該
ベアチップ部品のチップ電極に形成する突出電極を当該
プリント基板の基板電極と電気的に接続しつつ、当該ベ
アチップ部品と当該プリント基板とを接着剤を使って固
着することで構成される半導体装置において、変形量が
飽和するまで変形させたベアチップ部品1のチップ電極
3に形成する突出電極4をプリント基板2の基板電極6
と電気的に接続する。As shown in FIG. 1, the semiconductor device is an LSI
Of the bare chip component and the printed circuit board, the protruding electrode formed on the chip electrode of the bare chip component is electrically connected to the substrate electrode of the printed circuit board, and the bare chip component and the printed circuit board are bonded with an adhesive. In the semiconductor device configured by fixing by using the protruding electrode 4 formed on the chip electrode 3 of the bare chip component 1 deformed until the deformation amount is saturated, the substrate electrode 6 of the printed circuit board 2 is formed.
To be electrically connected to.
【0022】さらに、図1に示すように、前記プリント
基板の基板電極は、変形量が飽和するまで変形させるこ
とが好ましい。Further, as shown in FIG. 1, it is preferable that the substrate electrode of the printed circuit board is deformed until the deformation amount is saturated.
【0023】さらに、図1に示すように、前記ベアチッ
プ部品1のチップ電極3に形成する突出電極4の変形量
は、突出電極4の先端部が突出電極4の本体部に対して
僅か(2〜3μm)に突出していることが好ましい。Further, as shown in FIG. 1, the amount of deformation of the protruding electrode 4 formed on the chip electrode 3 of the bare chip component 1 is such that the tip of the protruding electrode 4 is slightly smaller than the main body of the protruding electrode 4 (2 To 3 μm) is preferable.
【0024】さらに、図1に示すように、前記プリント
基板2の基板電極6の変形量は、基板電極の厚みに対し
て1/2以上であることが好ましい。Further, as shown in FIG. 1, the deformation amount of the substrate electrode 6 of the printed circuit board 2 is preferably 1/2 or more of the thickness of the substrate electrode.
【0025】上記の実施の形態をとることにより、突出
電極あるいは基板電極の変形量を変形しない状態まで十
分に変形することができ、突出電極および基板電極の変
形量が飽和領域まで変形させることができる。これによ
り、接着剤の硬化収縮力は、突出電極と基板電極との接
触圧力(接圧)に十分に寄与することになる。このた
め、半導体装置が熱的ストレス、あるいは機械的ストレ
スを受けて膨張や収縮することがあっても、接着剤の硬
化収縮力は、突出電極と基板電極との接触圧力(接圧)
に寄与し、突出電極と基板電極との間の接触圧力(接
圧)を確保することができ、電極間の導通を維持するこ
とができる。なお、ベアチップ部品のチップ電極に形成
する突出電極の押圧による変形量において、突出電極の
本体部に対して突出する突出電極の先端部の寸法T1は
2〜3μm程度に突出させる。また、前記プリント基板
の基板電極の変形量において、凹み量T2は基板電極の
厚みT3に対して1/2以上にする。By adopting the above-described embodiment, the deformation amount of the projecting electrode or the substrate electrode can be sufficiently deformed to the undeformed state, and the deformation amount of the projecting electrode and the substrate electrode can be deformed to the saturated region. it can. Thereby, the curing shrinkage force of the adhesive sufficiently contributes to the contact pressure (contact pressure) between the protruding electrode and the substrate electrode. Therefore, even if the semiconductor device expands or contracts due to thermal stress or mechanical stress, the curing shrinkage force of the adhesive is determined by the contact pressure (contact pressure) between the protruding electrode and the substrate electrode.
The contact pressure (contact pressure) between the protruding electrode and the substrate electrode can be secured, and the conduction between the electrodes can be maintained. In addition, in the deformation amount of the protruding electrode formed on the chip electrode of the bare chip component due to the pressing, the dimension T1 of the tip portion of the protruding electrode protruding from the main body of the protruding electrode is projected to about 2 to 3 μm. Further, in the deformation amount of the substrate electrode of the printed circuit board, the recess amount T2 is set to 1/2 or more of the thickness T3 of the substrate electrode.
【0026】また、図3に示すように、半導体装置の製
造方法は、LSIのベアチップ部品とプリント基板とで
構成されて、当該ベアチップ部品のチップ電極に形成す
る突出電極を当該プリント基板の基板電極と電気的に接
続しつつ、当該ベアチップ部品と当該プリント基板とを
接着剤を使って固着することで構成される半導体装置の
製造方法において、ベアチップ部品のチップ電極に突出
電極を形成する第1の処理過程と、前記ベアチップ部品
のチップ電極に形成する突出電極を変形量が飽和するま
で変形させる第2の処理過程と、前記プリント基板のベ
アチップ部品載置位置に接着剤を塗布する第3の処理過
程と、前記第2の処理過程で形成された突出電極とプリ
ント基板の基板電極との位置を合わせつつ、ベアチップ
部品を前記第3の処理過程で接着剤を塗布されたプリン
ト基板に載置する第4の処理過程と、前記第4の処理過
程で載置したベアチップ部品をプリント基板の基板電極
に押圧するとともに、その押圧中に前記第3の処理過程
で塗布した接着剤を硬化させる第5の処理過程とを備え
る。Further, as shown in FIG. 3, in the method of manufacturing a semiconductor device, a bare chip component of an LSI and a printed circuit board are used, and a protruding electrode formed on a chip electrode of the bare chip component is a substrate electrode of the printed circuit board. In a method of manufacturing a semiconductor device, which is configured by fixing the bare chip component and the printed board with an adhesive while electrically connecting to the first chip electrode, a protruding electrode is formed on a chip electrode of the bare chip component. A processing step; a second processing step of deforming the protruding electrode formed on the chip electrode of the bare chip component until the deformation amount is saturated; and a third processing of applying an adhesive to the bare chip component mounting position of the printed circuit board. And the protruding electrodes formed in the second processing step and the board electrodes of the printed circuit board are aligned with each other, the bare chip component is placed in the third step. A fourth processing step of mounting the printed circuit board on which the adhesive is applied in the physical process, and the bare chip component mounted in the fourth processing step is pressed against the board electrode of the printed circuit board, and during the pressing, And a fifth treatment step of curing the adhesive applied in the third treatment step.
【0027】さらに、図4に示すように、前記半導体装
置の製造方法において、前記第3の処理過程の処理に先
立って、前記プリント基板の基板電極を変形量が飽和す
るまで変形させる処理過程を備えることが好ましい。Further, as shown in FIG. 4, in the method of manufacturing the semiconductor device, prior to the processing of the third processing step, a processing step of deforming the substrate electrode of the printed circuit board until the deformation amount is saturated is performed. It is preferable to provide.
【0028】さらに、前記半導体装置の製造方法におい
て、前記ベアチップ部品を押圧して、その押圧中にベア
チップ部品の移動量を検出し、ベアチップ部品のチップ
電極に形成する突出電極を変形量が飽和するまで変形さ
せることを確認することが好ましい。Further, in the method of manufacturing a semiconductor device, the bare chip component is pressed, the amount of movement of the bare chip component is detected during the pressing, and the amount of deformation of the protruding electrode formed on the chip electrode of the bare chip component is saturated. It is preferable to confirm that it is deformed up to.
【0029】上記の実施の形態をとることにより、半導
体装置を製造する過程において、ベアチップ部品のチッ
プ電極に突出電極(バンプ)を形成し、予め前記ベアチ
ップ部品のチップ電極に形成する突出電極を変形量が飽
和するまで変形させ、プリント基板のベアチップ部品載
置位置に接着剤を塗布し、突出電極(バンプ)と基板電
極との位置を合わせつつ、ベアチップ部品を接着剤の塗
布されたプリント基板に載置し、その載置したベアチッ
プ部品を基板電極が十分に凹むまでプリント基板に押圧
するとともに、その押圧中に、塗布した接着剤を硬化さ
せることにより半導体装置を製造できる。また、接着剤
の塗布工程の前に予め前記プリント基板の基板電極を変
形量が飽和するまで変形させる処理過程を加える。さら
に、前記ベアチップ部品を押圧して、その押圧中にベア
チップ部品の移動量を検出し、ベアチップ部品のチップ
電極に形成する突出電極を変形量が飽和するまで変形さ
せることを確認することができ、突出電極の変形量が飽
和するまで変形させる精度を向上させる。According to the above embodiment, in the process of manufacturing a semiconductor device, a protruding electrode (bump) is formed on the chip electrode of the bare chip component, and the protruding electrode formed on the chip electrode of the bare chip component is deformed in advance. Deform until the amount is saturated, apply adhesive to the bare chip component placement position on the printed circuit board, align the protruding electrodes (bumps) and the substrate electrodes, and then place the bare chip component on the adhesive coated printed circuit board. A semiconductor device can be manufactured by placing the bare chip component on the printed circuit board until the substrate electrode is sufficiently recessed, and curing the applied adhesive during the pressing. In addition, before the adhesive applying step, a process step of deforming the substrate electrode of the printed circuit board until the deformation amount is saturated is added. Furthermore, by pressing the bare chip component, the amount of movement of the bare chip component is detected during the pressing, and it is possible to confirm that the protruding electrode formed on the chip electrode of the bare chip component is deformed until the deformation amount is saturated, The accuracy of deforming the protruding electrode until it is saturated is improved.
【0030】また、図5に示すように、半導体装置の製
造方法は、LSIのベアチップ部品とプリント基板とで
構成されて、当該ベアチップ部品のチップ電極に形成す
る突出電極を当該プリント基板の基板電極と電気的に接
続しつつ、当該ベアチップ部品と当該プリント基板とを
接着剤を使って固着することで構成される半導体装置の
製造方法において、ベアチップ部品のチップ電極に突出
電極を形成する第1の処理過程と、前記プリント基板の
ベアチップ部品載置位置に接着剤を塗布する第2の処理
過程と、前記第1の処理過程で形成された突出電極とプ
リント基板の基板電極との位置を合わせつつ、ベアチッ
プ部品を前記第2の処理過程で接着剤を塗布されたプリ
ント基板に載置する第3の処理過程と、前記第3の処理
過程で載置したベアチップ部品をプリント基板の基板電
極に押圧して、その押圧中に前記ベアチップ部品のチッ
プ電極に形成する突出電極を変形量が飽和するまで変形
させるとともに、前記第2の処理過程で塗布した接着剤
を硬化させる第4の処理過程とを備える。Further, as shown in FIG. 5, in the method of manufacturing a semiconductor device, a bare chip component of an LSI and a printed board are used, and a protruding electrode formed on a chip electrode of the bare chip component is a substrate electrode of the printed board. In a method of manufacturing a semiconductor device, which is configured by fixing the bare chip component and the printed board with an adhesive while electrically connecting to the first chip electrode, a protruding electrode is formed on a chip electrode of the bare chip component. While aligning the processing step, the second processing step of applying an adhesive to the bare chip component mounting position of the printed circuit board, and the position of the protruding electrode formed in the first processing step and the board electrode of the printed circuit board. A third processing step of mounting the bare chip component on the printed circuit board coated with the adhesive in the second processing step, and a board mounted in the third processing step. The chip component is pressed against the substrate electrode of the printed circuit board, the protruding electrode formed on the chip electrode of the bare chip component is deformed during the pressing until the deformation amount is saturated, and the adhesive applied in the second processing step. And a fourth treatment step of hardening the.
【0031】さらに、図6に示すように、前記半導体装
置の製造方法において、前記第4の処理過程で、その押
圧中に前記プリント基板の基板電極を変形量が飽和する
まで変形させるように処理することが好ましい。Further, as shown in FIG. 6, in the method of manufacturing a semiconductor device, in the fourth processing step, the substrate electrode of the printed circuit board is deformed while being pressed until the deformation amount is saturated. Preferably.
【0032】さらに、前記半導体装置の製造方法におい
て、前記ベアチップ部品をプリント基板の基板電極に押
圧して、その押圧中に前記ベアチップ部品の移動量を検
出し、ベアチップ部品のチップ電極に形成する突出電極
を変形量が飽和するまで変形させることを確認すること
が好ましい。Furthermore, in the method of manufacturing a semiconductor device, the bare chip component is pressed against a substrate electrode of a printed circuit board, the amount of movement of the bare chip component is detected during the pressing, and a protrusion is formed on the chip electrode of the bare chip component. It is preferable to confirm that the electrode is deformed until the amount of deformation is saturated.
【0033】さらに、前記半導体装置の製造方法におい
て、前記ベアチップ部品をプリント基板の基板電極に押
圧して、その押圧中に前記ベアチップ部品の移動量を検
出し、プリント基板の基板電極を変形量が飽和するまで
変形させることを確認することが好ましい。Further, in the method of manufacturing a semiconductor device, the bare chip component is pressed against a substrate electrode of a printed circuit board, the moving amount of the bare chip component is detected during the pressing, and the deformation amount of the substrate electrode of the printed circuit board is reduced. It is preferable to confirm that the material is deformed until it is saturated.
【0034】上記の実施の形態をとることにより、半導
体装置を製造する過程において、ベアチップ部品のチッ
プ電極に突出電極(バンプ)を形成し、プリント基板の
ベアチップ部品載置位置に接着剤を塗布し、突出電極
(バンプ)と基板電極との位置を合わせつつ、ベアチッ
プ部品を接着剤の塗布されたプリント基板に載置し、そ
の載置したベアチップ部品を基板電極が十分に凹むまで
プリント基板に押圧するとともに、その押圧中に前記ベ
アチップ部品のチップ電極に形成する突出電極を変形量
が飽和するまで変形させるとともに、塗布した接着剤を
硬化させることにより半導体装置を製造できる。また、
その押圧中に前記プリント基板の基板電極を変形量が飽
和するまで変形させる。また、前記ベアチップ部品をプ
リント基板の基板電極に押圧して、その押圧中に前記ベ
アチップ部品の移動量を検出し、ベアチップ部品のチッ
プ電極に形成する突出電極を変形量が飽和するまで変形
させることを確認する。さらに、前記ベアチップ部品を
プリント基板の基板電極に押圧して、その押圧中に前記
ベアチップ部品の移動量を検出し、プリント基板の基板
電極を変形量が飽和するまで変形させることを確認する
ことができ、突出電極および基板電極の変形量が飽和す
るまで変形させる精度を向上させる。According to the above-described embodiment, in the process of manufacturing a semiconductor device, protruding electrodes (bumps) are formed on the chip electrodes of the bare chip component, and the adhesive is applied to the bare chip component mounting position of the printed board. While placing the protruding electrodes (bumps) and the substrate electrodes in position, place the bare chip component on the printed circuit board coated with the adhesive and press the bare chip component on the printed circuit board until the substrate electrode is sufficiently recessed. At the same time, the semiconductor device can be manufactured by deforming the protruding electrodes formed on the chip electrodes of the bare chip component until the deformation amount is saturated during the pressing and curing the applied adhesive. Also,
During the pressing, the board electrode of the printed board is deformed until the deformation amount is saturated. In addition, the bare chip component is pressed against a substrate electrode of a printed circuit board, the moving amount of the bare chip component is detected during the pressing, and the protruding electrode formed on the chip electrode of the bare chip component is deformed until the deformation amount is saturated. To confirm. Furthermore, it is possible to press the bare chip component against the substrate electrode of the printed circuit board, detect the amount of movement of the bare chip component during the pressing, and confirm that the substrate electrode of the printed circuit board is deformed until the amount of deformation is saturated. Therefore, it is possible to improve the accuracy of the deformation of the protruding electrode and the substrate electrode until the deformation amounts are saturated.
【0035】また、図7に示すように、半導体装置の製
造方法は、LSIのベアチップ部品とプリント基板とで
構成されて、当該ベアチップ部品のチップ電極に形成す
る突出電極を当該プリント基板の基板電極と電気的に接
続しつつ、当該ベアチップ部品と当該プリント基板とを
接着剤を使って固着することで構成される半導体装置の
製造方法において、ベアチップ部品のチップ電極に突出
電極を形成する第1の処理過程と、前記プリント基板の
基板電極を変形量が飽和するまで変形させる第2の処理
過程と、前記プリント基板のベアチップ部品載置位置に
接着剤を塗布する第3の処理過程と、前記第1の処理過
程で形成された突出電極とプリント基板の基板電極との
位置を合わせつつ、ベアチップ部品を前記第3の処理過
程で接着剤を塗布されたプリント基板に載置する第4の
処理過程と、前記第4の処理過程で載置したベアチップ
部品をプリント基板の基板電極に押圧するとともに、そ
の押圧中に前記第3の処理過程で塗布した接着剤を硬化
させる第5の処理過程とを備える。Further, as shown in FIG. 7, in the method of manufacturing a semiconductor device, a bare chip component of an LSI and a printed circuit board are used, and a protruding electrode formed on a chip electrode of the bare chip component is a substrate electrode of the printed circuit board. In a method of manufacturing a semiconductor device, which is configured by fixing the bare chip component and the printed board with an adhesive while electrically connecting to the first chip electrode, a protruding electrode is formed on a chip electrode of the bare chip component. A processing step, a second processing step of deforming the substrate electrode of the printed circuit board until a deformation amount is saturated, a third processing step of applying an adhesive to a bare chip component mounting position of the printed circuit board, and the third processing step. The bare chip component is coated with an adhesive in the third processing step while aligning the positions of the protruding electrodes formed in the first processing step and the board electrodes of the printed circuit board. A fourth processing step of mounting the printed circuit board on the printed circuit board, and the bare chip component mounted in the fourth processing step is pressed against the substrate electrode of the printed circuit board, and is applied in the third processing step during the pressing. And a fifth treatment step of curing the adhesive.
【0036】上記の実施の形態をとることにより、半導
体装置を製造する過程において、ベアチップ部品のチッ
プ電極に突出電極(バンプ)を形成し、予めプリント基
板の基板電極を変形量が飽和するまで変形させ、プリン
ト基板のベアチップ部品載置位置に接着剤を塗布し、突
出電極(バンプ)と基板電極との位置を合わせつつ、ベ
アチップ部品を接着剤の塗布されたプリント基板に載置
し、その載置したベアチップ部品の突出電極が十分に凹
むまでプリント基板に押圧するとともに、その押圧中
に、塗布した接着剤を硬化させることにより半導体装置
を製造できる。According to the above-described embodiment, in the process of manufacturing a semiconductor device, protruding electrodes (bumps) are formed on the chip electrodes of the bare chip component, and the board electrodes of the printed board are deformed in advance until the deformation amount is saturated. Then, the adhesive is applied to the mounting position of the bare chip component on the printed circuit board, and the bare chip component is mounted on the printed circuit board coated with the adhesive while aligning the positions of the protruding electrodes (bumps) and the substrate electrode. The semiconductor device can be manufactured by pressing the printed circuit board until the protruding electrodes of the placed bare chip component are sufficiently recessed and curing the applied adhesive during the pressing.
【0037】[0037]
【実施例】この発明による代表的な実施例を図1ないし
図9によって説明する。なお、以下において、同じ箇所
は同一の符号を付して有り、詳細な説明を省略すること
がある。DESCRIPTION OF THE PREFERRED EMBODIMENTS A typical embodiment according to the present invention will be described with reference to FIGS. In the following, the same parts are denoted by the same reference numerals, and detailed description thereof may be omitted.
【0038】図1は本発明の原理構成図を示す。FIG. 1 shows the principle configuration of the present invention.
【0039】図1(a)において、半導体装置は、LS
Iのベアチップ部品1とプリント基板2とで構成され
て、当該ベアチップ部品1のチップ電極3に形成する突
出電極4を当該プリント基板2の基板電極6と電気的に
接続しつつ、当該ベアチップ部品1と当該プリント基板
2とを接着剤7を使って固着することで構成される。な
お、同図(a)に示す構成の半導体装置を製造する過程
は後述する。In FIG. 1A, the semiconductor device is LS
The bare chip component 1 is formed by the bare chip component 1 of I and the printed circuit board 2, and the protruding electrode 4 formed on the chip electrode 3 of the bare chip component 1 is electrically connected to the substrate electrode 6 of the printed circuit board 2. And the printed circuit board 2 are fixed to each other with an adhesive 7. The process of manufacturing the semiconductor device having the configuration shown in FIG.
【0040】上記構成の半導体装置は、図1(b)に示
すように、前記ベアチップ部品1のチップ電極3に形成
する突出電極4の押圧による変形量において、突出電極
4の本体部に対して突出する突出電極4の先端部の寸法
T1は2〜3μm程度に突出している。また、前記プリ
ント基板2の基板電極6の変形量において、凹み量T2
は基板電極6の厚みT3(20〜30μm)に対して1
/2以上にしている。As shown in FIG. 1B, in the semiconductor device having the above-mentioned structure, the amount of deformation of the protruding electrode 4 formed on the chip electrode 3 of the bare chip component 1 due to the pressing force is larger than that of the main body of the protruding electrode 4. The size T1 of the tip of the protruding electrode 4 protruding is about 2 to 3 μm. In addition, in the deformation amount of the substrate electrode 6 of the printed circuit board 2, the recess amount T2
Is 1 with respect to the thickness T3 (20 to 30 μm) of the substrate electrode 6.
/ 2 or more.
【0041】図2は本発明の原理説明図を示す。FIG. 2 shows the principle of the present invention.
【0042】例えば、突出電極4の変形量を飽和するま
で変形させるためには、突出電極4を押圧する。突出電
極4は金で形成されるため、弾性変形領域は小さく、塑
性変形領域が殆どである。したがって、突出電極4に荷
重を加えると、突出電極4は荷重の値に応じて潰れる。
すなわち、押圧する荷重がA点までは突出電極(バン
プ)4の変形量は荷重の値に応じて変化する。しかし、
押圧する荷重がB点に至ると突出電極(バンプ)4の変
形量は変化しなくなる。すなわち、突出電極4の先端部
を構成する凸部の潰れが進むと、潰れ量は飽和する。For example, in order to deform the protruding electrode 4 until it is saturated, the protruding electrode 4 is pressed. Since the protruding electrode 4 is formed of gold, the elastic deformation region is small and the plastic deformation region is almost all. Therefore, when a load is applied to the protruding electrode 4, the protruding electrode 4 is crushed according to the value of the load.
That is, the amount of deformation of the protruding electrodes (bumps) 4 changes according to the value of the load until the load to be pressed reaches the point A. But,
When the pressing load reaches the point B, the amount of deformation of the protruding electrodes (bumps) 4 does not change. That is, when the protrusion of the protruding electrode 4 is crushed, the crush amount is saturated.
【0043】このように、ベアチップ部品1のチップ電
極3に形成する突出電極4の押圧による変形量におい
て、突出電極の本体部に対して突出する突出電極の先端
部の寸法T1が2〜3μm程度に突出している形態にお
いて、変形量が飽和するまで変形させた突出電極4を形
成することができる。なお、突出電極の変形量が飽和領
域に至ったかを確認する手法は、荷重に対する突出電極
の変形量が規定値以下になったかを検出すればよい。As described above, in the deformation amount of the protruding electrode 4 formed on the chip electrode 3 of the bare chip component 1 due to the pressing, the dimension T1 of the tip of the protruding electrode protruding from the main body of the protruding electrode is about 2 to 3 μm. It is possible to form the protruding electrode 4 that is deformed until the amount of deformation is saturated in the protruding shape. The method of confirming whether the deformation amount of the protruding electrode has reached the saturation region may be to detect whether the deformation amount of the protruding electrode with respect to the load is equal to or less than a specified value.
【0044】つぎに、前述の図1に示す構成の半導体装
置を製造する過程を説明する。Next, a process of manufacturing the semiconductor device having the structure shown in FIG. 1 will be described.
【0045】図3は本発明の実施例の図を示す。FIG. 3 shows a diagram of an embodiment of the invention.
【0046】同図において、ベアチップ部品1のチップ
電極3に突出電極(バンプ)4を形成する。つぎに、突
出電極(バンプ)4を変形量が飽和するまで変形させ
る。一方、プリント基板2のベアチップ部品載置位置に
接着剤7を塗布する。つぎに、ベアチップ部品1の突出
電極4とプリント基板2の基板電極6との位置を合わせ
つつ、ベアチップ部品1を接着剤7を塗布されたプリン
ト基板2に載置する。さらに、載置したベアチップ部品
1をプリント基板2の基板電極6に押圧するように荷重
を加えるとともに、その押圧中に塗布した接着剤7を硬
化させる。その後、荷重を開放することで図1に示す構
成の半導体装置の製造を完了する。In the figure, the protruding electrodes (bumps) 4 are formed on the chip electrodes 3 of the bare chip component 1. Next, the protruding electrodes (bumps) 4 are deformed until the deformation amount is saturated. On the other hand, the adhesive 7 is applied to the bare chip component mounting position of the printed circuit board 2. Next, the bare chip component 1 is placed on the printed board 2 coated with the adhesive 7 while aligning the positions of the protruding electrodes 4 of the bare chip component 1 and the board electrodes 6 of the printed board 2. Further, a load is applied so as to press the mounted bare chip component 1 against the substrate electrode 6 of the printed circuit board 2, and the adhesive agent 7 applied during the pressing is cured. Then, the load is released to complete the manufacturing of the semiconductor device having the configuration shown in FIG.
【0047】図4は本発明の実施例の図を示す。FIG. 4 shows a diagram of an embodiment of the invention.
【0048】同図において、ベアチップ部品1のチップ
電極3に突出電極(バンプ)4を形成する。つぎに、突
出電極(バンプ)4を変形量が飽和するまで変形させ
る。一方、プリント基板2の基板電極6を変形量が飽和
するまで変形させる。つぎに、プリント基板2のベアチ
ップ部品載置位置に接着剤7を塗布する。つぎに、ベア
チップ部品1の突出電極4とプリント基板2の基板電極
6との位置を合わせつつ、ベアチップ部品1を接着剤7
を塗布されたプリント基板2に載置する。さらに、載置
したベアチップ部品1をプリント基板2の基板電極6に
押圧するように荷重を加えるとともに、その押圧中に塗
布した接着剤7を硬化させる。その後、荷重を開放する
ことで図1に示す構成の半導体装置の製造を完了する。In the figure, the protruding electrodes (bumps) 4 are formed on the chip electrodes 3 of the bare chip component 1. Next, the protruding electrodes (bumps) 4 are deformed until the deformation amount is saturated. On the other hand, the board electrode 6 of the printed board 2 is deformed until the deformation amount is saturated. Next, the adhesive 7 is applied to the bare chip component mounting position of the printed circuit board 2. Next, the bare chip component 1 is bonded with the adhesive 7 while aligning the positions of the protruding electrodes 4 of the bare chip component 1 and the substrate electrodes 6 of the printed circuit board 2.
Is placed on the coated printed circuit board 2. Further, a load is applied so as to press the mounted bare chip component 1 against the substrate electrode 6 of the printed circuit board 2, and the adhesive agent 7 applied during the pressing is cured. Then, the load is released to complete the manufacturing of the semiconductor device having the configuration shown in FIG.
【0049】なお、図3および図4において、突出電極
(バンプ)4を変形量が飽和するまで変形させる過程に
おいて、前記ベアチップ部品1を押圧して、その押圧中
にベアチップ部品1の移動量を検出することで突出電極
4を変形量が飽和するまで変形させることを確認するこ
とができる。3 and 4, in the process of deforming the protruding electrodes (bumps) 4 until the deformation amount is saturated, the bare chip component 1 is pressed, and the movement amount of the bare chip component 1 is changed during the pressing. By detecting, it can be confirmed that the protruding electrode 4 is deformed until the deformation amount is saturated.
【0050】図5は本発明の実施例の図を示す。FIG. 5 shows a diagram of an embodiment of the present invention.
【0051】同図において、ベアチップ部品1のチップ
電極3に突出電極(バンプ)4を形成する。一方、プリ
ント基板2のベアチップ部品載置位置に接着剤7を塗布
する。つぎに、ベアチップ部品1の突出電極4とプリン
ト基板2の基板電極6との位置を合わせつつ、ベアチッ
プ部品1を接着剤7を塗布されたプリント基板2に載置
する。さらに、載置したベアチップ部品1をプリント基
板2の基板電極6に押圧するように荷重を加えるととも
に、その押圧中に突出電極(バンプ)4を変形量が飽和
するまで変形させる。さらに、その押圧中に塗布した接
着剤7を硬化させる。その後、荷重を開放することで図
1に示す構成の半導体装置の製造を完了する。In the figure, protruding electrodes (bumps) 4 are formed on the chip electrodes 3 of the bare chip component 1. On the other hand, the adhesive 7 is applied to the bare chip component mounting position of the printed circuit board 2. Next, the bare chip component 1 is placed on the printed board 2 coated with the adhesive 7 while aligning the positions of the protruding electrodes 4 of the bare chip component 1 and the board electrodes 6 of the printed board 2. Further, a load is applied so as to press the placed bare chip component 1 against the substrate electrode 6 of the printed board 2, and the protruding electrodes (bumps) 4 are deformed during the pressing until the deformation amount is saturated. Further, the adhesive 7 applied during the pressing is cured. Then, the load is released to complete the manufacturing of the semiconductor device having the configuration shown in FIG.
【0052】図6は本発明の実施例の図を示す。FIG. 6 shows a diagram of an embodiment of the present invention.
【0053】同図において、ベアチップ部品1のチップ
電極3に突出電極(バンプ)4を形成する。一方、プリ
ント基板2のベアチップ部品載置位置に接着剤7を塗布
する。つぎに、ベアチップ部品1の突出電極4とプリン
ト基板2の基板電極6との位置を合わせつつ、ベアチッ
プ部品1を接着剤7を塗布されたプリント基板2に載置
する。さらに、載置したベアチップ部品1をプリント基
板2の基板電極6に押圧するように荷重を加えるととも
に、その押圧中にベアチップ部品1の突出電極(バン
プ)4とプリント基板2の基板電極6とを変形量が飽和
するまで変形させる。さらに、その押圧中に塗布した接
着剤7を硬化させる。その後、荷重を開放することで図
1に示す構成の半導体装置の製造を完了する。In the figure, the protruding electrodes (bumps) 4 are formed on the chip electrodes 3 of the bare chip component 1. On the other hand, the adhesive 7 is applied to the bare chip component mounting position of the printed circuit board 2. Next, the bare chip component 1 is placed on the printed board 2 coated with the adhesive 7 while aligning the positions of the protruding electrodes 4 of the bare chip component 1 and the board electrodes 6 of the printed board 2. Further, a load is applied so as to press the placed bare chip component 1 against the substrate electrode 6 of the printed circuit board 2, and the protruding electrodes (bumps) 4 of the bare chip component 1 and the substrate electrode 6 of the printed circuit board 2 are pressed during the pressing. Deform until the amount of deformation is saturated. Further, the adhesive 7 applied during the pressing is cured. Then, the load is released to complete the manufacturing of the semiconductor device having the configuration shown in FIG.
【0054】なお、図5および図6において、突出電極
(バンプ)4あるいは基板電極6を変形量が飽和するま
で変形させる過程において、前記ベアチップ部品1を押
圧して、その押圧中にベアチップ部品1の移動量を検出
することで突出電極4あるいは基板電極6を変形量が飽
和するまで変形させることを確認することができる。な
お、詳細は後述する。5 and 6, in the process of deforming the protruding electrode (bumps) 4 or the substrate electrode 6 until the deformation amount is saturated, the bare chip component 1 is pressed, and the bare chip component 1 is pressed during the pressing. It is possible to confirm that the protruding electrode 4 or the substrate electrode 6 is deformed until the amount of deformation is saturated by detecting the amount of movement. The details will be described later.
【0055】図7は本発明の実施例の図を示す。FIG. 7 shows a diagram of an embodiment of the present invention.
【0056】同図において、ベアチップ部品1のチップ
電極3に突出電極(バンプ)4を形成する。一方、プリ
ント基板2の基板電極6を変形量が飽和するまで変形さ
せる。つぎに、プリント基板2のベアチップ部品載置位
置に接着剤7を塗布する。つぎに、ベアチップ部品1の
突出電極4とプリント基板2の基板電極6との位置を合
わせつつ、ベアチップ部品1を接着剤7を塗布されたプ
リント基板2に載置する。さらに、載置したベアチップ
部品1をプリント基板2の基板電極6に押圧するように
荷重を加えるとともに、その押圧中に塗布した接着剤7
を硬化させる。その後、荷重を開放することで図1に示
す構成の半導体装置の製造を完了する。なお、前記の押
圧中にベアチップ部品1の突出電極(バンプ)4を変形
量が飽和するまで変形させることが好ましい。In the figure, the protruding electrodes (bumps) 4 are formed on the chip electrodes 3 of the bare chip component 1. On the other hand, the board electrode 6 of the printed board 2 is deformed until the deformation amount is saturated. Next, the adhesive 7 is applied to the bare chip component mounting position of the printed circuit board 2. Next, the bare chip component 1 is placed on the printed board 2 coated with the adhesive 7 while aligning the positions of the protruding electrodes 4 of the bare chip component 1 and the board electrodes 6 of the printed board 2. Further, a load is applied so as to press the placed bare chip component 1 against the substrate electrode 6 of the printed circuit board 2, and the adhesive 7 applied during the pressing.
Cure. Then, the load is released to complete the manufacturing of the semiconductor device having the configuration shown in FIG. It is preferable to deform the protruding electrodes (bumps) 4 of the bare chip component 1 during the pressing until the deformation amount is saturated.
【0057】つぎに、半導体装置を製造するチップマウ
ンタ装置と、その装置を用いて突出電極あるいは基板電
極を変形量が飽和するまで変形させることを確認する制
御方法について説明する。Next, a chip mounter apparatus for manufacturing a semiconductor device and a control method for confirming that the apparatus is used to deform the protruding electrode or the substrate electrode until the deformation amount is saturated will be described.
【0058】図8は本発明の実施例の図を示す。FIG. 8 shows a diagram of an embodiment of the present invention.
【0059】同図において、チップマウンタ装置は、搬
送ラインを介してベアチップ部品1と、接着剤7を塗布
されたプリント基板2とを受け取り、ベアチップ部品1
とプリント基板2とを接合することで半導体装置を製造
するものである。In the figure, the chip mounter device receives the bare chip component 1 and the printed circuit board 2 coated with the adhesive 7 via the carrying line, and the bare chip component 1
The semiconductor device is manufactured by joining the printed circuit board 2 and the printed circuit board 2.
【0060】チップマウンタ装置は、接着剤7を塗布さ
れたプリント基板2を固定してそれをXY方向に移動す
るXYテーブル10と、ベアチップ部品1をピックしベ
アチップ部品1の突出電極4をXYテーブル10に固定
したプリント基板2の基板電極6に接合するヘッド14
と、ヘッド14を押圧する荷重を測定するロードセル1
3と、モータの回転量を検出しヘッド14の変位量に置
き換えるエンコーダ12と、ヘッド14を押圧する荷重
を印加するモータ11と、演算制御部15とを主構成と
している。The chip mounter device fixes the printed board 2 coated with the adhesive 7 and moves it in the XY directions, and the bare chip component 1 is picked up and the protruding electrodes 4 of the bare chip component 1 are placed on the XY table. A head 14 which is bonded to the substrate electrode 6 of the printed circuit board 2 fixed to 10.
And a load cell 1 for measuring the load pressing the head 14.
3, an encoder 12 that detects the rotation amount of the motor and replaces it with the displacement amount of the head 14, a motor 11 that applies a load that presses the head 14, and an arithmetic control unit 15 as main components.
【0061】つぎに、チップマウンタ装置の制御方法を
説明する。Next, a method of controlling the chip mounter device will be described.
【0062】図9は本発明の実施例の図を示す。FIG. 9 shows a diagram of an embodiment of the present invention.
【0063】同図のステップS10において、演算制御
部15はモータ11を駆動させ、例えば図2のA点まで
の荷重を印加してヘッド14を降下させる。In step S10 of the figure, the arithmetic and control unit 15 drives the motor 11 and applies a load up to point A in FIG. 2 to lower the head 14.
【0064】ステップS11において、演算制御部15
はエンコーダ11からのヘッド14の変位量(ベアチッ
プ部品の移動量)を読取り一時記憶する。In step S11, the arithmetic control unit 15
Reads the amount of displacement of the head 14 (the amount of movement of the bare chip component) from the encoder 11 and temporarily stores it.
【0065】ステップS12において、演算制御部15
は所定の荷重刻み幅になるようにモータ11を駆動さ
せ、ヘッド14を降下させる。In step S12, the arithmetic control unit 15
Drives the motor 11 so as to obtain a predetermined load step size and lowers the head 14.
【0066】ステップS13において、演算制御部15
はエンコーダ11からのヘッド14の変位量(ベアチッ
プ部品の移動量)を読取り一時記憶する。In step S13, the arithmetic control unit 15
Reads the amount of displacement of the head 14 (the amount of movement of the bare chip component) from the encoder 11 and temporarily stores it.
【0067】ステップS14において、演算制御部15
は前回の変位量(ベアチップ部品の移動量)と今回の変
位量(ベアチップ部品の移動量)とから所定の荷重刻み
幅に対する変位量(ベアチップ部品の移動量)の差を算
出する。In step S14, the arithmetic control unit 15
Calculates the difference between the displacement amount (bare chip component moving amount) and the current displacement amount (bare chip component moving amount) with respect to a predetermined load step size (bare chip component moving amount).
【0068】ステップS15において、演算制御部15
は変位量(ベアチップ部品の移動量)の差が規定値以下
か判定する。規定値以下ならば変形量が飽和したとして
処理を終了する。変位量(ベアチップ部品の移動量)の
差が規定値以下でないならばステップS12に戻る。In step S15, the arithmetic control unit 15
Determines whether the difference in displacement amount (movement amount of bare chip component) is less than or equal to a specified value. If it is less than the specified value, the amount of deformation is saturated and the process ends. If the difference in the displacement amount (the amount of movement of the bare chip component) is not equal to or less than the specified value, the process returns to step S12.
【0069】このように、荷重を一定刻みとし、その時
のヘッド14の変位量を検出し、ヘッド14の変位量
(ベアチップ部品の移動量)を突出電極の変形量に置換
え、突出電極の変形量を検出して前回との変形量の差に
よって飽和領域に至ったことを判断する。これにより、
ベアチップ部品をプリント基板の基板電極に押圧して、
その押圧中に前記ベアチップ部品の移動量を検出し、ベ
アチップ部品のチップ電極に形成する突出電極を変形量
が飽和するまで変形させることを確認することができ
る。また、ベアチップ部品をプリント基板の基板電極に
押圧して、その押圧中に前記ベアチップ部品の移動量を
検出し、プリント基板の基板電極を変形量が飽和するま
で変形させることを確認することができる。As described above, the load is set at constant intervals, the displacement amount of the head 14 at that time is detected, and the displacement amount of the head 14 (movement amount of the bare chip component) is replaced with the deformation amount of the protruding electrode to obtain the deformation amount of the protruding electrode. Is detected and it is judged that the saturation region has been reached due to the difference in the deformation amount from the previous time. This allows
By pressing the bare chip part against the board electrode of the printed board,
It is possible to detect the amount of movement of the bare chip component during the pressing and confirm that the protruding electrode formed on the chip electrode of the bare chip component is deformed until the amount of deformation is saturated. It is also possible to press the bare chip component against the substrate electrode of the printed circuit board, detect the amount of movement of the bare chip component during the pressing, and confirm that the substrate electrode of the printed circuit board is deformed until the amount of deformation is saturated. .
【0070】なお、チップマウンタ装置に限らず、上記
のように荷重を一定刻みとし、その時の変位量を検出
し、変位量を突出電極の変形量あるいは基板電極の変形
量に置換え、変形量を検出して前回との変形量の差によ
って飽和領域に至ったことを判断することができる。Not limited to the chip mounter device, the load is set at a constant interval as described above, the displacement amount at that time is detected, and the displacement amount is replaced with the deformation amount of the protruding electrode or the deformation amount of the substrate electrode. It is possible to detect that the saturation region has been reached by detecting the difference in deformation amount from the previous time.
【0071】[0071]
【発明の効果】以上説明したように本発明によれば、次
に示すような効果が期待できる。As described above, according to the present invention, the following effects can be expected.
【0072】突出電極あるいは基板電極の変形量を変形
しない状態まで十分に変形することができ、突出電極お
よび基板電極を変形量が飽和領域まで変形させることが
できる。これにより、接着剤の硬化収縮力は、突出電極
と基板電極との接触圧力(接圧)に十分に寄与すること
になる。このため、半導体装置が熱的ストレス、あるい
は機械的ストレスを受けて膨張や収縮することがあって
も、接着剤の硬化収縮力は、突出電極と基板電極との接
触圧力(接圧)に寄与し、突出電極と基板電極との間の
接触圧力(接圧)を確保することができ、電極間の導通
を維持することができる。The amount of deformation of the projecting electrode or the substrate electrode can be sufficiently deformed to a state where it is not deformed, and the projecting electrode and the substrate electrode can be deformed to the saturation region of the amount of deformation. Thereby, the curing shrinkage force of the adhesive sufficiently contributes to the contact pressure (contact pressure) between the protruding electrode and the substrate electrode. Therefore, even if the semiconductor device expands or contracts due to thermal stress or mechanical stress, the curing shrinkage force of the adhesive contributes to the contact pressure (contact pressure) between the protruding electrode and the substrate electrode. However, the contact pressure (contact pressure) between the protruding electrode and the substrate electrode can be secured, and the conduction between the electrodes can be maintained.
【0073】また、半導体装置を製造する過程におい
て、ベアチップ部品のチップ電極に突出電極(バンプ)
を形成し、前記ベアチップ部品のチップ電極に形成する
突出電極を変形量が飽和するまで変形させ、プリント基
板のベアチップ部品載置位置に接着剤を塗布し、突出電
極(バンプ)と基板電極との位置を合わせつつ、ベアチ
ップ部品を接着剤の塗布されたプリント基板に載置し、
その載置したベアチップ部品を基板電極が十分に凹むま
でプリント基板に押圧するとともに、その押圧中に、塗
布した接着剤を硬化させることにより半導体装置を製造
することができる。また、接着剤の塗布工程の前に前記
プリント基板の基板電極を変形量が飽和するまで変形さ
せる処理過程を加えることにより半導体装置を製造する
ことができる。さらに、前記ベアチップ部品を押圧し
て、その押圧中にベアチップ部品の移動量を検出し、ベ
アチップ部品のチップ電極に形成する突出電極を変形量
が飽和するまで変形させることを確認することができ、
突出電極の変形量が飽和するまで変形させる精度を向上
させることができる。In the process of manufacturing a semiconductor device, a protruding electrode (bump) is formed on the chip electrode of the bare chip component.
And deform the protruding electrode formed on the chip electrode of the bare chip component until the amount of deformation is saturated, apply an adhesive to the bare chip component mounting position of the printed circuit board, and form the protruding electrode (bump) and the substrate electrode. While aligning the position, place the bare chip component on the printed circuit board coated with adhesive,
A semiconductor device can be manufactured by pressing the mounted bare chip component against the printed circuit board until the board electrode is sufficiently recessed, and curing the applied adhesive during the pressing. In addition, the semiconductor device can be manufactured by adding a process of deforming the substrate electrode of the printed circuit board until the deformation amount is saturated before the adhesive applying step. Furthermore, by pressing the bare chip component, the amount of movement of the bare chip component is detected during the pressing, and it is possible to confirm that the protruding electrode formed on the chip electrode of the bare chip component is deformed until the deformation amount is saturated,
It is possible to improve the accuracy of the deformation of the protruding electrode until the deformation amount is saturated.
【0074】また、半導体装置を製造する過程におい
て、ベアチップ部品のチップ電極に突出電極(バンプ)
を形成し、プリント基板のベアチップ部品載置位置に接
着剤を塗布し、突出電極(バンプ)と基板電極との位置
を合わせつつ、ベアチップ部品を接着剤の塗布されたプ
リント基板に載置し、その載置したベアチップ部品を基
板電極が十分に凹むまでプリント基板に押圧するととも
に、その押圧中に前記ベアチップ部品のチップ電極に形
成する突出電極を変形量が飽和するまで変形させるとと
もに、塗布した接着剤を硬化させることにより半導体装
置を製造することができる。また、その押圧中に前記プ
リント基板の基板電極を変形量が飽和するまで変形させ
ることにより半導体装置を製造することができる。ま
た、前記ベアチップ部品をプリント基板の基板電極に押
圧して、その押圧中に前記ベアチップ部品の移動量を検
出し、ベアチップ部品のチップ電極に形成する突出電極
を変形量が飽和するまで変形させることを確認すること
ができる。さらに、前記ベアチップ部品をプリント基板
の基板電極に押圧して、その押圧中に前記ベアチップ部
品の移動量を検出し、プリント基板の基板電極を変形量
が飽和するまで変形させることを確認することができ、
突出電極および基板電極の変形量が飽和するまで変形さ
せる精度を向上させることができる。In the process of manufacturing a semiconductor device, a protruding electrode (bump) is formed on the chip electrode of the bare chip component.
And apply an adhesive to the position where the bare chip component is placed on the printed circuit board, and while aligning the positions of the protruding electrodes (bumps) and the substrate electrode, the bare chip component is placed on the printed circuit board coated with the adhesive, While pressing the bare chip component placed on the printed circuit board until the substrate electrode is sufficiently recessed, the protruding electrode formed on the chip electrode of the bare chip component is deformed during the pressing until the deformation amount is saturated, and the applied adhesive is applied. A semiconductor device can be manufactured by curing the agent. Further, the semiconductor device can be manufactured by deforming the substrate electrode of the printed circuit board during the pressing until the deformation amount is saturated. In addition, the bare chip component is pressed against a substrate electrode of a printed circuit board, the moving amount of the bare chip component is detected during the pressing, and the protruding electrode formed on the chip electrode of the bare chip component is deformed until the deformation amount is saturated. Can be confirmed. Furthermore, it is possible to press the bare chip component against the substrate electrode of the printed circuit board, detect the amount of movement of the bare chip component during the pressing, and confirm that the substrate electrode of the printed circuit board is deformed until the amount of deformation is saturated. You can
It is possible to improve the accuracy of the deformation of the protruding electrode and the substrate electrode until the deformation amounts are saturated.
【0075】また、半導体装置を製造する過程におい
て、ベアチップ部品のチップ電極に突出電極(バンプ)
を形成し、プリント基板の基板電極を変形量が飽和する
まで変形させ、プリント基板のベアチップ部品載置位置
に接着剤を塗布し、突出電極(バンプ)と基板電極との
位置を合わせつつ、ベアチップ部品を接着剤の塗布され
たプリント基板に載置し、その載置したベアチップ部品
の突出電極が十分に凹むまでプリント基板に押圧すると
ともに、その押圧中に、塗布した接着剤を硬化させるこ
とにより半導体装置を製造することができる。In the process of manufacturing a semiconductor device, a protruding electrode (bump) is formed on the chip electrode of the bare chip component.
To deform the board electrode of the printed circuit board until the amount of deformation is saturated, apply an adhesive to the mounting position of the bare chip component on the printed circuit board, and align the protruding electrode (bump) with the board electrode to form a bare chip. By placing the component on the printed circuit board coated with the adhesive and pressing the printed circuit board until the protruding electrodes of the mounted bare chip component are sufficiently recessed, by curing the coated adhesive during the pressing. A semiconductor device can be manufactured.
【図1】本発明の原理構成図である。FIG. 1 is a principle configuration diagram of the present invention.
【図2】本発明の原理説明図である。FIG. 2 is a diagram illustrating the principle of the present invention.
【図3】本発明の実施例の図である。FIG. 3 is a diagram of an embodiment of the present invention.
【図4】本発明の実施例の図である。FIG. 4 is a diagram of an embodiment of the present invention.
【図5】本発明の実施例の図である。FIG. 5 is a diagram of an embodiment of the present invention.
【図6】本発明の実施例の図である。FIG. 6 is a diagram of an embodiment of the present invention.
【図7】本発明の実施例の図である。FIG. 7 is a diagram of an embodiment of the present invention.
【図8】本発明の実施例の図である。FIG. 8 is a diagram of an embodiment of the present invention.
【図9】本発明の実施例の図である。FIG. 9 is a diagram of an embodiment of the present invention.
【図10】従来技術の構成図である。FIG. 10 is a configuration diagram of a conventional technique.
【図11】従来技術の図である。FIG. 11 is a diagram of the prior art.
【図12】従来技術の説明図である。FIG. 12 is an explanatory diagram of a conventional technique.
1:ベアチップ部品 2:プリント基板 4:突出電極 6:基板電極 7:接着剤 11:モータ 12:エンコーダ 13:ロードセル 14:ヘッド 15:演算制御部 1: Bare chip part 2: Printed circuit board 4: protruding electrode 6: substrate electrode 7: Adhesive 11: Motor 12: Encoder 13: Load cell 14: Head 15: arithmetic control unit
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松田 健治 石川県河北郡宇ノ気町字宇野気ヌ98番地 の2 株式会社ピーエフユー内 (56)参考文献 特開 平10−233413(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 21/60 311 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenji Matsuda Kenji Matsuda 2 No. 98, Unoki-nu, Unoki-cho, Kawakita-gun, Ishikawa Prefecture (56) References JP-A-10-233413 (JP, A) (58) ) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/60 311
Claims (12)
で構成されて、当該ベアチップ部品のチップ電極に形成
する突出電極を当該プリント基板の基板電極と電気的に
接続しつつ、当該ベアチップ部品と当該プリント基板と
を接着剤を使って固着することで構成される半導体装置
において、荷重変化に対する変形量が規定値以下となる
まで変形させたベアチップ部品のチップ電極に形成する
突出電極をプリント基板の基板電極と電気的に接続す
る、ことを特徴とする半導体装置。1. A bare chip component and a printed circuit board which are composed of an LSI bare chip component and a printed circuit board, and electrically connect a protruding electrode formed on a chip electrode of the bare chip circuit component to a substrate electrode of the printed circuit board. In a semiconductor device constituted by fixing a substrate and an adhesive with an adhesive, a protruding electrode formed on a chip electrode of a bare chip component deformed until a deformation amount with respect to a load change is equal to or less than a specified value is printed. A semiconductor device, which is electrically connected to a substrate electrode of a substrate.
に対する変形量が規定値以下となるまで変形させる、こ
とを特徴とする請求項1記載の半導体装置。2. A substrate electrode of the printed circuit board has a load change.
The semiconductor device according to claim 1, wherein the semiconductor device is deformed until the amount of deformation with respect to is less than or equal to a specified value .
る突出電極の変形量は、 突出電極の先端部が突出電極の本体部に対して僅かに突
出している、 ことを特徴とする請求項1または請求項2記載の半導体
装置。3. The deformation amount of the protruding electrode formed on the chip electrode of the bare chip component is such that the tip of the protruding electrode slightly protrudes from the main body of the protruding electrode. The semiconductor device according to claim 2.
で構成されて、当該ベアチップ部品のチップ電極に形成
する突出電極を当該プリント基板の基板電極と電気的に
接続しつつ、当該ベアチップ部品と当該プリント基板と
を接着剤を使って固着することで構成される半導体装置
の製造方法において、ベアチップ部品のチップ電極に突
出電極を形成する第1の処理過程と、前記ベアチップ部
品のチップ電極に形成する突出電極を荷重変化に対する
変形量が規定値以下となるまで変形させる第2の処理過
程と、前記プリント基板のベアチップ部品載置位置に接
着剤を塗布する第3の処理過程と、前記第2の処理過程
で形成された突出電極とプリント基板の基板電極との位
置を合わせつつ、ベアチップ部品を前記第3の処理過程
で接着剤を塗布されたプリント基板に載置する第4の処
理過程と、前記第4の処理過程で載置したベアチップ部
品をプリント基板の基板電極に押圧するとともに、その
押圧中に前記第3の処理過程で塗布した接着剤を硬化さ
せる第5の処理過程とを備える、ことを特徴とする半導
体装置の製造方法。5. A bare chip component and a printed circuit board which are composed of a bare chip component of an LSI and a printed circuit board, and electrically connect a protruding electrode formed on a chip electrode of the bare chip device to a substrate electrode of the printed circuit board. In a method of manufacturing a semiconductor device, which is configured by fixing a substrate to an adhesive using an adhesive, a first processing step of forming a protruding electrode on a chip electrode of a bare chip component, and a protrusion formed on a chip electrode of the bare chip component. Electrode against load change
It is formed by a second processing step of deforming until the amount of deformation becomes equal to or less than a specified value, a third processing step of applying an adhesive to a bare chip component mounting position of the printed circuit board, and a second processing step. A fourth processing step of placing the bare chip component on the printed circuit board coated with the adhesive in the third processing step while aligning the positions of the protruding electrodes and the board electrode of the printed circuit board, and the fourth processing step. A bare chip component mounted on the printed circuit board is pressed against a substrate electrode of a printed circuit board, and a fifth processing step of curing the adhesive applied in the third processing step during the pressing is performed. Device manufacturing method.
第3の処理過程の処理に先立って、前記プリント基板の
基板電極を荷重変化に対する変形量が規定値以下となる
まで変形させる処理過程を備える、ことを特徴とする請
求項5記載の半導体装置の製造方法。6. In the method of manufacturing a semiconductor device, prior to the processing of the third processing step, the board electrode of the printed board is deformed until the deformation amount with respect to a load change becomes a specified value or less . The method of manufacturing a semiconductor device according to claim 5, further comprising a processing step.
ベアチップ部品を押圧して、その押圧中にベアチップ部
品の移動量を検出し、ベアチップ部品のチップ電極に形
成する突出電極を荷重変化に対する変形量が規定値以下
となるまで変形させることを確認する、ことを特徴とす
る請求項5または請求項6記載の半導体装置の製造方
法。7. The method of manufacturing a semiconductor device according to claim 1, wherein the bare chip component is pressed, the amount of movement of the bare chip component is detected during the pressing, and the protruding electrode formed on the chip electrode of the bare chip component is deformed by a change in load. Is below the specified value
To verify that the deforming until method of manufacturing a semiconductor device according to claim 5 or claim 6, wherein the.
で構成されて、当該ベアチップ部品のチップ電極に形成
する突出電極を当該プリント基板の基板電極と電気的に
接続しつつ、当該ベアチップ部品と当該プリント基板と
を接着剤を使って固着することで構成される半導体装置
の製造方法において、ベアチップ部品のチップ電極に突
出電極を形成する第1の処理過程と、前記プリント基板
のベアチップ部品載置位置に接着剤を塗布する第2の処
理過程と、前記第1の処理過程で形成された突出電極と
プリント基板の基板電極との位置を合わせつつ、ベアチ
ップ部品を前記第2の処理過程で接着剤を塗布されたプ
リント基板に載置する第3の処理過程と、前記第3の処
理過程で載置したベアチップ部品をプリント基板の基板
電極に押圧して、その押圧中に前記ベアチップ部品のチ
ップ電極に形成する突出電極を荷重変化に対する変形量
が規定値以下となるまで変形させるとともに、前記第2
の処理過程で塗布した接着剤を硬化させる第4の処理過
程とを備える、ことを特徴とする半導体装置の製造方
法。8. A bare chip component and a printed circuit board which are composed of an LSI bare chip component and a printed circuit board, and electrically connect a protruding electrode formed on a chip electrode of the bare chip circuit component to a substrate electrode of the printed circuit board. In a method of manufacturing a semiconductor device configured by fixing a substrate to an adhesive using an adhesive, a first processing step of forming a protruding electrode on a chip electrode of a bare chip component, and a bare chip component mounting position on the printed circuit board. While aligning the second processing step of applying the adhesive with the position of the protruding electrode formed in the first processing step and the board electrode of the printed circuit board, the bare chip component is coated with the adhesive in the second processing step. A third processing step of mounting the applied printed circuit board on the printed circuit board, and pressing the bare chip component mounted in the third processing step on the substrate electrode of the printed circuit board, The deformation of the protruding electrodes formed on the chip electrodes of the bare chip during pressing of the relative change in load
Is deformed until it becomes less than a specified value, and the second
And a fourth processing step of hardening the adhesive applied in the processing step of.
第4の処理過程で、その押圧中に前記プリント基板の基
板電極を荷重変化に対する変形量が規定値以下となるま
で変形させるように処理する、ことを特徴とする請求項
8記載の半導体装置の製造方法。9. The method of manufacturing a semiconductor device according to claim 4, wherein in the fourth processing step, the substrate electrode of the printed circuit board is deformed while being pressed until a deformation amount with respect to a load change becomes a specified value or less. 9. The method for manufacturing a semiconductor device according to claim 8, further comprising the step of:
記ベアチップ部品をプリント基板の基板電極に押圧し
て、その押圧中に前記ベアチップ部品の移動量を検出
し、ベアチップ部品のチップ電極に形成する突出電極を
荷重変化に対する変形量が規定値以下となるまで変形さ
せることを確認する、ことを特徴とする請求項8または
請求項9記載の半導体装置の製造方法。10. The method for manufacturing a semiconductor device, wherein the bare chip component is pressed against a substrate electrode of a printed circuit board, the amount of movement of the bare chip component is detected during the pressing, and a protrusion is formed on the chip electrode of the bare chip component. Electrodes
The method for manufacturing a semiconductor device according to claim 8 or 9, wherein it is confirmed that the deformation is performed until a deformation amount with respect to a load change becomes equal to or less than a specified value .
記ベアチップ部品をプリント基板の基板電極に押圧し
て、その押圧中に前記ベアチップ部品の移動量を検出
し、プリント基板の基板電極を荷重変化に対する変形量
が規定値以下となるまで変形させることを確認する、こ
とを特徴とする請求項9記載の半導体装置の製造方法。11. The method of manufacturing a semiconductor device according to claim 1, wherein the bare chip component is pressed against a substrate electrode of a printed circuit board, a moving amount of the bare chip component is detected during the pressing, and the substrate electrode of the printed circuit board is subjected to a load change. Deformation amount
10. The method for manufacturing a semiconductor device according to claim 9, further comprising confirming that the deformation is performed until the value becomes equal to or less than a specified value .
とで構成されて、当該ベアチップ部品のチップ電極に形
成する突出電極を当該プリント基板の基板電極と電気的
に接続しつつ、当該ベアチップ部品と当該プリント基板
とを接着剤を使って固着することで構成される半導体装
置の製造方法において、ベアチップ部品のチップ電極に
突出電極を形成する第1の処理過程と、前記プリント基
板の基板電極を荷重変化に対する変形量が規定値以下と
なるまで変形させる第2の処理過程と、前記プリント基
板のベアチップ部品載置位置に接着剤を塗布する第3の
処理過程と、前記第1の処理過程で形成された突出電極
とプリント基板の基板電極との位置を合わせつつ、ベア
チップ部品を前記第3の処理過程で接着剤を塗布された
プリント基板に載置する第4の処理過程と、前記第4の
処理過程で載置したベアチップ部品をプリント基板の基
板電極に押圧するとともに、その押圧中に前記第3の処
理過程で塗布した接着剤を硬化させる第5の処理過程と
を備える、ことを特徴とする半導体装置の製造方法。12. The bare chip component and the printed circuit board, which are composed of a bare chip component of an LSI and a printed circuit board, and electrically connect a protruding electrode formed on a chip electrode of the bare chip device to a substrate electrode of the printed circuit board. In a method of manufacturing a semiconductor device, which comprises bonding a substrate with an adhesive, a first processing step of forming a protruding electrode on a chip electrode of a bare chip component, and a substrate electrode of the printed circuit board against a load change. If the amount of deformation is less than the specified value
A second processing step of deforming the printed circuit board, a third processing step of applying an adhesive to a bare chip component mounting position of the printed circuit board, and a protruding electrode formed in the first processing step and a substrate of the printed circuit board. A fourth processing step of mounting the bare chip component on the printed board coated with the adhesive in the third processing step while aligning the position with the electrode, and a bare chip component mounted in the fourth processing step are described. And a fifth processing step of pressing the substrate electrode of the printed circuit board and curing the adhesive applied in the third processing step during the pressing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07118599A JP3502783B2 (en) | 1999-03-17 | 1999-03-17 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07118599A JP3502783B2 (en) | 1999-03-17 | 1999-03-17 | Semiconductor device and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| JP2000269268A JP2000269268A (en) | 2000-09-29 |
| JP3502783B2 true JP3502783B2 (en) | 2004-03-02 |
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ID=13453358
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| JP (1) | JP3502783B2 (en) |
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