JP3508144B2 - Silicon polymer - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a novel silicone polymer and a method for producing the same .

[0002]

2. Description of the Related Art In the modern organic chemical industry, organic materials are composed mainly of carbon atoms. On the other hand, the semiconductor industry is based on silicon atoms because of the stability of materials and the variety of physical properties. It is considered that in the near future, a considerable area of the organic chemical industry centered on carbon atoms will shift to the silicon chemical industry centered on silicon atoms.

[0003]

The organic chemical materials centering on modern carbon atoms have a wide band gap when they have (a) covalent bonds,
It is difficult to be a semiconductor (b) Since the bond is relatively weak, it is soft and low in strength (c) It is weak to heat (d) Many of the raw materials depend on oil, and when petroleum is exhausted, it becomes difficult to procure raw materials. I have a problem.

Silicon crystals widely used in conventional semiconductor materials are (A) capable of producing a good quality single crystal (B) oxide and nitride form a good insulator (C). The manufacturing process of LSIs and the like is characterized by the fact that (D) raw materials are almost infinitely matured, and on the other hand, (a) the miniaturization of semiconductor devices is approaching its limit (b) using silicon crystals. Therefore, the band gap that cannot form a soft structure (c) is fixed at 1.1 eV,
It is difficult to impart various physical properties (d) The silicon crystal has an indirect transition type energy band structure, and does not emit light (e) In a semiconductor device, a metal is used for wiring, so the manufacturing process is complicated. In addition, there is a problem that it is difficult to form an extremely fine structure.

Silicon polymers whose main skeleton has a one-dimensional structure are described in, for example, the literature Fujino, et al., J. Polymer Scie.
nce, vol 26 (1988), pp 109. The silicone polymer described in this document is synthesized by the following reaction.

[Chemical 1]

[0006] Also, published by Science Forum Co., Ltd., "Organosilicon Strategy Materials-Vol. 1", Nos. 480-48
On page 1, it is described that a silicon polymer having a main skeleton having a one-dimensional structure can be synthesized by the following reaction.

[Chemical 2]

[Chemical 3]

The silicon polymer obtained by these methods is an insulator. A report that when a film-shaped silicon polymer is doped with arsenic pentafluoride or antimony pentafluoride, it exhibits electric conductivity at a semiconductor level is described in "Organosilicon Strategic Materials-Vol. 1", p. 481. There is. The reason why the electric conductivity is developed in this way is that the σ electron forming the silicon-silicon bond is transferred to the arsenic pentafluoride or antimony pentafluoride as the dopant to generate an electron hole in the silicon chain, It is considered that this electron hole moves through the silicon chain. No impurity atom is introduced into the main skeleton of the silicon polymer obtained by these methods, or arsenic pentafluoride or antimony pentafluoride is not introduced into the main skeleton of the silicon polymer as a dopant.

A method for doping a silicon polymer is
For example, S. Furukawa, SolidState Commun., 62
(1987), pp 539. In this method, a polysilane alloy (silicon polymer) is deposited on a silicon substrate using the plasma CVD method under the following conditions. The product is a polysilane alloy (S
i: H). It is reported that using this method, polysilane alloy (Si: H) can be formed on a silicon substrate and p-type or n-type doping can be performed.

However, the method for doping a polysilane alloy according to this document relates to the doping of impurities into an alloy having no atomic arrangement in the atomic arrangement, and has the atomic arrangement and the orientation of the polymer ordered in the present invention. It is essentially different from silicone polymers.

An object of the present invention is to provide a novel silicon polymer having new physical properties, having the advantages of the organic chemical material centered on carbon atom and the silicon crystal material , and a method for producing the same. .

[0011]

The silicon polymer of the present invention is characterized in that an impurity atom is introduced into a main skeleton composed of silicon atoms. Here, the silicon polymer is one in which carbon in the carbon-based organic polymer is replaced with a silicon atom.

The impurity atoms are preferably one or more kinds of atoms selected from the group consisting of boron, aluminum, gallium, indium, nitrogen, phosphorus, arsenic and antimony. Since the silicon atom of the main skeleton belongs to group IV,
When the impurities of the group II atom or the group V atom are introduced into the main skeleton, the level of the impurity atom appears at a relatively shallow position in the band gap and acts as a donor-acceptor level.

In a preferred embodiment of the present invention, the silicone polymer has a side chain group consisting of a hydrogen atom, an alkyl group, an aryl group, or a combination thereof.

The main skeleton has a structure such as a one-dimensional structure (chain or linear), a two-dimensional structure (planar) or a three-dimensional structure (three-dimensional structure). Here, the silicon polymer having a three-dimensional structure of the present invention does not include a silicon single crystal having a normal diamond structure.

In a preferred embodiment of the present invention, the silicon polymer is characterized in that the band gap is controlled by controlling the structure and / or size of the main skeleton. Further, in a preferred embodiment of the present invention, the electric conductivity of the silicon polymer is controlled by controlling the distance between the impurity atoms. By setting the average distance between the impurity atoms to be 22 angstroms or more, it can have properties as a semiconductor. Alternatively, by setting the average distance between the impurity atoms to be less than 22 angstrom, it may have a property as a conductor.

In a preferred embodiment of the invention, the silicone polymer is formed within or on a solid material,
Alternatively, it is present in a liquid, vacuum or gas.

Whether an impurity atom is introduced into the main skeleton is determined by NMR spectrum, ESR spectrum,
It can be analyzed by various measuring methods such as visible / ultraviolet absorption spectrum, infrared absorption spectrum, electric conductivity, emission spectrum and elemental analysis. The type of impurity atoms introduced into the main skeleton can be specified by various analytical methods such as mass spectrometry, fluorescent X-ray analysis, and atomic absorption spectrometry. The type of side chain group that the main skeleton has can be specified by various analytical methods such as mass spectrometry, elemental analysis, NMR, and visible / ultraviolet absorption spectrum. The structure of the main skeleton and the distance between impurity atoms can be analyzed and measured by various analysis methods such as mass spectrometry, elemental analysis and STM. Silicone polymers formed in or on solid surfaces, or in liquids, in vacuum or in gases, are
The presence or absence thereof can be detected by various measuring methods such as an ultraviolet absorption spectrum, an infrared absorption spectrum, an emission spectrum and a surface reflection spectrum.

The first aspect of the present invention for achieving the above object
The method for producing a silicon polymer according to the aspect of
The main skeleton consists of boron, aluminum, gallium,
Group consisting of indium, nitrogen, phosphorus, arsenic and antimony
A series of impurities containing atoms selected from
A method for producing a conpolymer comprising : H ₂ SiCl ₂ and H ₂
XCl ₂ (where X is a boron atom, an aluminum source)
Child, gallium atom, indium atom, nitrogen atom, phosphorus source
Child, arsenic atom, or antimony atom)
Heat to reflux in hydrofuran in the presence of Li or Na
It is characterized by

Second aspect of the present invention for achieving the above object
The method for producing a silicon polymer according to the aspect of
The main skeleton consists of boron, aluminum, gallium,
Group consisting of indium, nitrogen, phosphorus, arsenic and antimony
A series of impurities containing atoms selected from
A method for producing a conpolymer , comprising: R ₁ R ₂ XCl ₂ and R ₃
R ₄ SiCl ₂ (where X is a boron atom, aluminum
Atom, gallium atom, indium atom, nitrogen atom, phosphorus
Child, arsenic atom, or antimony atom,
R ₁ , R ₂ , R ₃ and R ₄ are each a hydrogen atom, an alkyl group or an aryl group.
Group) or Li in tetrahydrofuran or Li or
It is characterized by heating under reflux in the presence of Na.

A third aspect of the present invention for achieving the above object.
The method for producing a silicon polymer according to the aspect of
The main skeleton consists of boron, aluminum, gallium,
The group consisting in indium, nitrogen, phosphorus, arsenic and antimony
A series of impurities containing atoms selected from
A method for producing a conpolymer , comprising: a CaSi ₂ crystal;
CaX ₂ crystal (where X is boron atom, aluminum
Atom, gallium atom, indium atom, nitrogen atom, phosphorus
Child, arsenic atom or antimony atom) and hydrochloric acid
It is characterized by being left inside.

[0021]

In the silicon polymer of the present invention, an impurity atom is introduced into the main skeleton. As a result, a defect level (level) is generated in the band gap, and this level can serve as a donor or an acceptor, so that the electrical conductivity of the silicon polymer can be controlled easily and with high accuracy.

In the silicon polymer of the present invention, the level generated by the introduction of the impurity atom is deeper than the level generated by the impurity atom (P, As, B, etc.) added to a usual silicon crystal, and therefore carriers are generated. High energy required for electrical conductivity is less likely to occur. However,
When the distance between the introduced impurity atoms is short, overlap occurs between electron orbiters at the donor / acceptor level where electrons are partially occupied (this state is schematically shown in FIG. 1), and a band is formed. This increases the electrical conductivity of the silicone polymer. In this way, the electrical conductivity of the silicon polymer can be controlled by controlling the distance between the impurity atoms introduced into the main skeleton.

FIG. 2 shows the relationship between the band gap and the structure (one-dimensional structure, two-dimensional structure, three-dimensional structure) and / or size of the silicon polymer. As is clear from FIG. 2, the band gap can be controlled by controlling the structure and / or size of the silicon polymer.

[0024]

EXAMPLES The silicone polymer of the present invention will be described below based on examples. (Example-1) In the silicon polymer of Example-1, an impurity atom (X) is introduced into the main skeleton made of Si, the main skeleton has a one-dimensional structure, and the side chain group is a hydrogen atom. . The impurity atom (X) can be boron, aluminum, gallium, indium, nitrogen, phosphorus, arsenic, antimony, or the like. This silicon polymer is obtained by heating and refluxing dichlorosilane H ₂ SiCl ₂ and H ₂ XCl ₂ in tetrahydrofuran (THF) in the presence of Li or Na, as shown by the following formula.

[Chemical 4]

By changing the value of x between 0 and 1, the ratio of impurity atoms introduced into the main skeleton can be changed. Also, by adjusting the reaction time,
The size of the silicone polymer can be controlled. That is, the longer the reaction time, the longer the length of the silicone polymer (one-dimensional size), and thereby the band gap of the silicone polymer can be controlled.
As a result, the electrical conductivity of the silicone polymer can be controlled.

(Example-2) In the silicon polymer of Example-2, the impurity atom (X) is introduced into the main skeleton made of Si, the main skeleton has a one-dimensional structure, and a hydrogen atom and an alkyl group are included. , An aryl group, or a side chain group composed of a combination thereof.
The impurity atom (X) can be boron, aluminum, gallium, indium, nitrogen, phosphorus, arsenic, antimony, or the like. This silicon polymer is obtained by heating and refluxing R ₁ R ₂ X Cl ₂ and R ₂ R ₄ Si Cl ₂ in tetrahydrofuran (THF) in the presence of Li or Na, as shown in the following formula. . In addition, R ₁ , R ₂ , R ₃ , R
₄ is a hydrogen atom, an alkyl group or an aryl group.

[Chemical 5]

By changing the value of y between 0 and 1, the ratio of impurity atoms introduced into the main skeleton can be changed. Also, by adjusting the reaction time,
The size of the silicone polymer can be controlled. That is, the longer the reaction time, the longer the length of the silicone polymer, which can control the band gap of the silicone polymer, and consequently the electrical conductivity of the silicone polymer. Further, the presence of the side chain group makes it possible to remove the dangling bond.

(Example-3) In the silicon polymer of Example-3, an impurity atom is introduced into the main skeleton made of Si, and the main skeleton has a two-dimensional structure. Impurity atoms are boron, aluminum,
It can be gallium, indium, nitrogen, phosphorus, arsenic, antimony, or the like. This silicone polymer can be synthesized by the following method.

A CaSi ₂ crystal and, for example, CaB ₂ are mixed and left in a 38% HCl solution at room temperature for 3 hours. After that , filtration, addition of P ₂ O ₅ and vacuum drying gives a light yellow layered siloxane. By adding CaB ₂ , B is introduced into the main skeleton made of Si as an impurity atom. Instead of CaB ₂ , CaP ₂ ,
CaAs ₂ etc. can also be added. The size of the silicone polymer can be controlled by adjusting the reaction time. That is, the longer the reaction time, the larger the area (two-dimensional size) of the silicon polymer, which allows the band gap of the silicon polymer to be controlled, which in turn controls the electrical conductivity of the silicon polymer. can do.

Example-4 The silicon polymer in Example-4 has an impurity atom introduced into the main skeleton, and the main skeleton has a three-dimensional structure. Impurity atoms are boron, aluminum, gallium,
It can be indium, nitrogen, phosphorus, arsenic, antimony, or the like. This silicone polymer can be produced by the following method.

As a substrate, graphite or a substance having a graphite structure is prepared, and silicon is epitaxially grown on this substrate. As a result, a silicon polymer having a graphite structure and having impurity atoms introduced therein can be manufactured. Instead of graphite or a substance having a graphite structure, for example, a substrate having a hexagonal boron nitride BN type structure, for example, hexagonal boron nitride can be used.

(Example-5) In Example-5, a scanning tunneling microscope (ST
M) is used to introduce impurity atoms into the main skeleton made of Si. That is, the impurity atoms are extracted one by one from the material made of the impurity atoms by the STM probe, and the impurity atoms at desired positions between Si atoms are inserted.

After that, hydrogen atoms and the like are adsorbed on the silicon polymer, dangling bond treatment is performed, and an insulating film is further deposited thereon to form the Si formed.
-Fix the arrangement of impurity atoms.

Example 6 As shown in FIG. 1, when the distance between impurity atoms is short,
The electron orbits of the impurity atoms existing in the band gap overlap with each other, and carriers (electrons or holes) can easily move back and forth. Therefore, if the impurity atoms are introduced into the main skeleton at a period such that the energy levels of the impurity atoms are overlapped with each other, the electrical conductivity of the silicon polymer can be increased.

BSi ₃₂ H ₆₈ was obtained by introducing boron (B) as an impurity atom into a silicon polymer having a sufficiently long one-dimensional structure having a side chain group composed of hydrogen atoms. Calculating the electronic state in this case, it is about 1
At the eV high position (in the band gap), three levels due to B appear. Of these three levels, the highest energy level is the acceptor level (see FIG. 3).
If we express this acceptor level wave function by contour lines,
It becomes like FIG. Region where the absolute value of the wave function is 0.01 or more, i.e., the existence probability of approximately the electrons 0.00
The region of 01e / au ³ or more extends to a distance of about 11 Å centering on the B atom (FIG. 4).
reference). In FIG. 4, the solid line shows a positive value and the broken line shows a negative value, and the heights of the contour lines are ± 0.0100, ± 0.
0225, ± 0.0550, ± 0.1000. The unit of length in the x direction and the y direction is au (1au =
0.52917706 angstroms).

If two or more B atoms are introduced into a sufficiently long silicon chain and the distance between these B atoms is less than twice the above-mentioned 11 angstroms, that is, less than 22 angstroms, then between the acceptor levels. Even if the holes cannot be supplied to the valence band due to the overlap, electrical conductivity occurs. Therefore, if B atoms are periodically introduced and the distance between them is less than 22 angstroms, it is possible to impart a conductive property to the silicon polymer. The shorter the distance between B atoms, the greater the overlap between acceptor levels,
The electrical conductivity of silicone polymers is increased. Further, if the distance between B atoms is 22 angstroms or more, it is possible to impart a semiconducting property to the silicon polymer.
In this way, the electrical conductivity can be controlled by controlling the distance between the introduced impurity atoms.

(Example-7) By changing the value of x in Example-1 or the value of y in Example-2 between 0 and 1, the proportion of impurity atoms introduced into the main skeleton. Can be changed, and thereby the distance between the impurity atoms can be controlled. That is, the shape of the silicon polymer having a one-dimensional structure is such a structure as schematically shown in FIG. 5, and the axial distance D between the Si atoms serving as the main skeleton is determined by the bond angle of the main skeleton atoms and the If the bond lengths are the same as those of the silicon crystal, it is about 1.92 angstrom. Therefore, in order to set the distance between the impurity atoms to about 22 angstroms, 22 ÷ 1.92 = 11.46
Therefore, it suffices that one impurity atom exists for every 11 Si atoms. From the above results, if x ≧ 1/11 or y ≧ 1/11, the silicone polymer can be given a property as a conductor. Also, x <1/11 or y
When it is set to <1/11, the property as a semiconductor can be imparted to the silicon polymer.

(Example-8) Example-8 is an example in which the silicone polymer of the present invention is formed in a solid material. As the solid material, for example, an insulator such as silicon oxide, a semiconductor crystal having a wider gap than silicon polymer, a liquid crystal, a polymer thin film, or the like can be exemplified. The main skeleton of the silicon polymer has a one-dimensional structure (chain), a two-dimensional structure (planar) or a three-dimensional structure (three-dimensional structure). As an example in which the silicon polymer of the present invention is formed in a solid material, internal wiring (not exposed on the surface) of an IC or LSI, or a quantum effect element can be exemplified.

Example-9 Example-9 is an example in which the silicone polymer of the present invention is formed on the surface of a solid material. As the solid material, for example, an insulator such as silicon oxide, a semiconductor crystal having a wider gap than silicon polymer, a liquid crystal, a polymer thin film, or the like can be exemplified. The main skeleton of silicone polymer is
It has a one-dimensional structure (chain), a two-dimensional structure (planar) or a three-dimensional structure (three-dimensional structure). As an example in which the silicon polymer of the present invention is formed on the surface of a solid material, IC,
The wiring of the LSI or the quantum effect element can be exemplified.

Example-10 Example-10 is an example in which the silicone polymer of the present invention is present in a liquid. This makes it possible to prepare a liquid that emits light by photoexcitation. Examples of the liquid include non-polar solvents such as hexanes, pentanes, octanes, carbon tetrachloride, chloroform, dichloromethane, dichloroethane, and the like. When producing a liquid that emits light by photoexcitation, it is preferable to use a liquid having a good light transmittance.

Example-11 Example-10 is an example in which the silicone polymer of the present invention is present in a vacuum or in a gas. As a gas,
Examples thereof include N ₂ , He, Ne, Ar, Kr, Xe and the like.

[0042]

According to the silicone polymer of the present invention,
The electrical conductivity can be controlled by adjusting the introduction of impurity atoms. In addition, the band gap can be controlled by changing the structure and / or size of the silicon polymer. Furthermore, it is possible to manufacture various materials, devices, and elements having a structure incorporating silicon polymer,
A material having properties according to the purpose can be provided, for example, as a semiconductor element material or a mechanically stable material.

The silicone polymer of the present invention has the following features. Silicon atoms have a stronger binding force than carbon atoms. A polymer having semiconductor properties and conductor properties can be produced. The energy band structure becomes a direct transition type and can emit light. It has a wider bandgap than a silicon crystal, and has a stronger binding force than an organic material using carbon atoms, and thus is excellent in heat resistance, nonflammability, strength, and the like. The bandgap can be controlled by controlling the shape and size.

By utilizing such characteristics, it can be applied to the elements and materials described below. (1) Semiconductor material having arbitrary band gap (2) Ultra-ultrafine semiconductor device and its material (3) Wiring material for ultra-ultrafine semiconductor device (4) Quantum effect element such as quantum wire, quantum dot, quantum box, etc. Its material (5) Light emitting element, light receiving element and its material (6) Material having heat resistance, oxidation resistance and corrosion resistance comparable to metal (7) Electrically conductive engineering plastic (8) Compared with current semiconductor elements And semiconductor materials with flexible structure and its materials (9) Others, semiconductor superlattices, photosensitive materials, ultra high density current transmission materials, artificial organs, biocompatible materials, building materials, aerospace materials, VLSI microfabrication Application to materials, optical switches, nonlinear optical materials

[Brief description of drawings]

FIG. 1 is a diagram schematically showing an overlap between donor-acceptor level trajectories.

FIG. 2 is a diagram showing the relationship between the structure and size of a silicon polymer and the band gap.

FIG. 3 is a diagram showing energy levels when boron is introduced into a silicon polymer as an impurity atom.

FIG. 4 is a diagram showing contour lines of the wave function at the acceptor level.

FIG. 5 is a diagram schematically showing the shape of a silicon polymer having a one-dimensional structure.

Continuation of the front page (56) Reference JP-A 63-37129 (JP, A) JP-A 2-167860 (JP, A) JP-A 2-84437 (JP, A) JP-A 4-222455 (JP , A) JP-A-5-214108 (JP, A) JP-A-4-339826 (JP, A) JP-A-4-335033 (JP, A) JP-A-61-200130 (JP, A) Japanese Patent Publication 3-63576 (JP, B2) JP-B 2-333733 (JP, B2) JP-B 57-26527 (JP, B1) Patent 2760555 (JP, B2) Matsumoto Nobuo, Silicon Polymer: Very small in a flask World, Parity, Japan, Vol. 6 / No. 10, p. 52-54 Yoshinori Tokura, Hiroaki Tachibana, Structure and Electronic Properties of Polysilane Polygermane, Applied Physics, Japan, Vo. 60 / NO. 10, p. 990-996 (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 51/00 C08G 77/60

Claims (73)

(57) [Claims] 1. A main skeleton consisting only of silicon atoms and introduced impurity atoms , wherein the impurity atoms are one or two selected from the group consisting of aluminum, gallium and indium.
A kind or more atoms, a silicon polymer characterized by the this <br/> functioning as a conductor or semiconductor. 2. A main skeleton consisting of only silicon atoms and introduced impurity atoms, which is selected from the group consisting of boron, aluminum, gallium and indium.
A silicon polymer , which is a kind or two or more kinds of atoms , has an average distance between the impurity atoms of 22 angstroms or more, and has a property as a semiconductor. 3. A main skeleton consisting of only silicon atoms and introduced impurity atoms, which is selected from the group consisting of boron, aluminum, gallium and indium.
A silicon polymer , which is one kind or two or more kinds of atoms , has an average distance between the impurity atoms of less than 22 angstroms, and has a property as a conductor. 4. A hydrogen atom, an alkyl group, an aryl group, or a silicon polymer according to any one of claims 1 to 3, characterized in that it has a side chain group composed of these combinations. 5. The main backbone one-dimensional structure, according to claim 1 or claims characterized in that it has a two-dimensional structure or three-dimensional structure
Item 4. The silicone polymer according to any one of item 3 . 6. A silicone polymer according to any one of claims 1 to 5, characterized in that it is formed in a solid material. 7. A silicon polymer according to any one of claims 1 to 5, characterized in that it is formed on the solid material surface. 8. The silicone polymer according to any one of claims 1 to 5 , which is present in a liquid. 9. silicone polymer according to any one of claims 1 to 5, characterized in that present in a vacuum or in a gas. 10. A main skeleton consisting of only silicon atoms and introduced impurity atoms , the impurity atoms being one or more selected from the group consisting of phosphorus, arsenic and antimony. atom
And a silicon polymer characterized by functioning as a conductor or a semiconductor . 11. The silicone polymer according to claim 10 , which has a side chain group composed of a hydrogen atom, an alkyl group, an aryl group, or a combination thereof. 12. The silicone polymer according to claim 10 , wherein the main skeleton has a one-dimensional structure, a two-dimensional structure or a three-dimensional structure. 13. The silicon polymer according to claim 10 , which has an average distance between impurity atoms of 22 angstroms or more and has a property as a semiconductor. 14. The silicone polymer according to claim 10 , wherein the average distance between the impurity atoms is less than 22 angstroms and the conductor polymer has a property as a conductor. 15. The silicon polymer according to any one of claims 10 to 14, characterized in that it is formed in a solid material. 16. Silicon polymers according to any one of claims 10 to 14, characterized in that it is formed on the solid material surface. 17. claims, characterized in that present in the liquid
Item 15. The silicone polymer according to any one of items 10 to 14 . 18. The silicon polymer according to any one of claims 10 to 14, characterized in that present in a vacuum or in a gas. 19. A main skeleton consisting of only silicon atoms and introduced impurity atoms , wherein the impurity atoms are nitrogen atoms , and the average distance between the impurity atoms is less than 22 angstroms. A silicone polymer characterized by having properties as a conductor. 20. The silicone polymer according to claim 19 , which has a side chain group consisting of a hydrogen atom, an alkyl group, an aryl group, or a combination thereof. 21. The silicone polymer according to claim 19 , wherein the main skeleton has a one-dimensional structure, a two-dimensional structure or a three-dimensional structure. 22. The silicone polymer according to claim 19, which is formed in a solid material. 23. The silicone polymer according to claim 19, which is formed on the surface of a solid material. 24. claims, characterized in that present in the liquid
Item 22. The silicone polymer according to any one of items 19 to 21 . 25. The silicone polymer according to claim 19, which is present in a vacuum or a gas. 26. A main skeleton consisting only of silicon atoms and introduced impurity atoms , wherein the impurity atoms are introduced in a cycle in which electron orbits of the impurity atoms do not overlap with each other,
Impurity atoms are aluminum, gallium, indium,
Phosphorus, Ri Oh at least one atom selected from the group consisting of arsenic and antimony, silicon polymer characterized by functioning as a semiconductor. 27. A main skeleton consisting of only silicon atoms and introduced impurity atoms , wherein the impurity atoms are introduced in a cycle such that electron orbits of the impurity atoms do not overlap with each other,
The impurity atoms are one or more kinds of atoms selected from the group consisting of boron, aluminum, gallium, indium, phosphorus, arsenic and antimony, and the average distance between the impurity atoms is 22 angstroms or more, and the semiconductor is A silicone polymer having the following properties. 28. The hydrogen atom, an alkyl group, an aryl group, or a silicon polymer of claim 26 or claim 27 characterized by having a side chain group composed of these combinations. 29. The main skeleton one-dimensional structure, according to claim 26, characterized in that it has a two-dimensional structure or three-dimensional structure or
The silicone polymer according to claim 27 . 30. The silicone polymer according to claim 26, which is formed in a solid material. 31. The silicone polymer according to claim 26, which is formed on the surface of a solid material. 32. A claims, characterized in that present in the liquid
Item 30. The silicone polymer according to any one of items 26 to 29 . 33. The silicone polymer according to claim 26, which is present in a vacuum or a gas. 34. A main skeleton consisting of only silicon atoms and introduced impurity atoms , wherein the impurity atoms are introduced in a cycle in which energy levels of the impurity atoms do not overlap. , The impurity atom is selected from the group consisting of aluminum, gallium, indium, phosphorus, arsenic and antimony 1
Ri Ah in species or two or more atoms, a silicon polymer characterized by the this <br/> functioning as a semiconductor. 35. A main skeleton consisting of only silicon atoms and introduced impurity atoms , wherein the impurity atoms are introduced in a cycle in which energy levels of the impurity atoms do not overlap. , Impurity atoms are boron, aluminum, gallium,
One or two or more kinds of atoms selected from the group consisting of indium, phosphorus, arsenic and antimony, the average distance between the impurity atoms is 22 angstroms or more, and it has characteristics as a semiconductor. Silicon polymer. 36. The silicone polymer according to claim 34 or 35 , which has a side chain group composed of a hydrogen atom, an alkyl group, an aryl group, or a combination thereof. 37. The main skeleton one-dimensional structure, according to claim 34, characterized in that it has a two-dimensional structure or three-dimensional structure or
The silicone polymer according to claim 35 . 38. The silicone polymer according to claim 34, which is formed in a solid material. 39. The silicone polymer according to claim 34, which is formed on the surface of a solid material. 40. A claims, characterized in that present in the liquid
The silicone polymer according to any one of claims 34 to 37 . 41. The silicone polymer according to claim 34, which is present in a vacuum or a gas. 42. A has only one <br/> et consisting main skeleton impurity atoms are introduced to the silicon atom, it said impurity atoms are introduced in a cycle overlap occurs in electron orbit between the impurity atoms, silicon impurity atoms of boron, aluminum, gallium, indium, phosphorus, Ri Oh at least one atom selected from the group consisting of arsenic and antimony, wherein <br/> to function as a conductor polymer. 43. The silicone polymer according to claim 42 , which has a side chain group composed of a hydrogen atom, an alkyl group, an aryl group, or a combination thereof. 44. The silicone polymer according to claim 42 , wherein the main skeleton has a one-dimensional structure, a two-dimensional structure or a three-dimensional structure. 45. The silicone polymer according to claim 42 , wherein the average distance between the impurity atoms is less than 22 angstroms. 46. The silicone polymer according to claim 42, which is formed in a solid material. 47. The silicone polymer according to claim 42, which is formed on the surface of a solid material. 48. A claims, characterized in that present in the liquid
Item 46. The silicone polymer according to any one of items 42 to 45 . 49. The silicone polymer according to claim 42, which is present in a vacuum or a gas. 50. A main skeleton consisting of only silicon atoms and introduced impurity atoms , the impurity atoms being nitrogen atoms,
The impurity atoms in order to control the electrical conductivity, overlapping the electron orbit between the impurity atoms are introduced in a cycle occurs <br/> Contact is, silicon and having properties as conductors polymer. 51. The silicone polymer according to claim 50 , which has a side chain group composed of a hydrogen atom, an alkyl group, an aryl group, or a combination thereof. 52. The silicone polymer according to claim 50 , wherein the main skeleton has a one-dimensional structure, a two-dimensional structure or a three-dimensional structure. 53. The silicone polymer according to claim 50 , wherein the average distance between the impurity atoms is less than 22 angstroms. 54. The silicone polymer according to claim 50, which is formed in a solid material. 55. The silicone polymer according to claim 50, which is formed on the surface of a solid material. 56. A claims, characterized in that present in the liquid
Item 54. The silicone polymer according to any one of items 50 to 53 . 57. The silicone polymer according to any one of claims 50 to 53 , which is present in a vacuum or a gas. 58. A main skeleton composed of only silicon atoms and introduced impurity atoms , wherein the impurity atoms are introduced in a cycle in which energy levels of the impurity atoms overlap with each other. Impurity atoms are boron, aluminum, gallium,
Indium, phosphorus, Ri Oh at least one atom selected from the group consisting of arsenic and antimony, functions as a conductor
A silicone polymer characterized by being. 59. The silicone polymer according to claim 58 , which has a side chain group composed of a hydrogen atom, an alkyl group, an aryl group, or a combination thereof. 60. The silicone polymer according to claim 58 , wherein the main skeleton has a one-dimensional structure, a two-dimensional structure or a three-dimensional structure. 61. The silicone polymer according to claim 58 , wherein the average distance between the impurity atoms is less than 22 angstroms. 62. The silicone polymer according to claim 58, which is formed in a solid material. 63. The silicone polymer according to claim 58, which is formed on the surface of a solid material. 64. claims, characterized in that present in the liquid
Item 62. The silicone polymer according to any one of items 58 to 61 . 65. The silicone polymer according to any one of claims 58 to 61 , which is present in a vacuum or a gas. 66. A main skeleton consisting of only silicon atoms and introduced impurity atoms , wherein the impurity atoms are overlapped between energy levels of the impurity atoms in order to control electric conductivity. are introduced in a cycle occurs, impurity atoms is a nitrogen atom, a silicon polymer characterized by having the properties of a conductor. 67. The silicone polymer according to claim 66 , having a side chain group composed of a hydrogen atom, an alkyl group, an aryl group, or a combination thereof. 68. The silicone polymer according to claim 66 , wherein the main skeleton has a one-dimensional structure, a two-dimensional structure or a three-dimensional structure. 69. The silicone polymer according to claim 66 , wherein the average distance between the impurity atoms is less than 22 angstroms. 70. The silicone polymer according to claim 66, which is formed in a solid material. 71. The silicone polymer according to claim 66, which is formed on the surface of a solid material. 72.] claims, characterized in that present in the liquid
Item 70. The silicone polymer according to any one of items 66 to 69 . 73. The silicone polymer according to claim 66, which is present in a vacuum or a gas.