JP3511719B2 - Thin film electroluminescent device - Google Patents
Thin film electroluminescent deviceInfo
- Publication number
- JP3511719B2 JP3511719B2 JP04657595A JP4657595A JP3511719B2 JP 3511719 B2 JP3511719 B2 JP 3511719B2 JP 04657595 A JP04657595 A JP 04657595A JP 4657595 A JP4657595 A JP 4657595A JP 3511719 B2 JP3511719 B2 JP 3511719B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- thin film
- tio
- low temperature
- electroluminescent device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 claims description 21
- 230000015556 catabolic process Effects 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Alkoxy titanium Chemical compound 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、交流駆動の薄膜エレク
トロルミネセンス（ＥＬ）素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an AC driven thin film electroluminescence (EL) device.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】従来、
薄膜ＥＬ素子としては、ガラス基板等の透明絶縁体上に
ＩＴＯ等の透明導電層を形成するなどして作成した透明
電極と背面電極とを対面させると共に、これら電極間に
絶縁層を積層した発光層を介在させたものが知られてお
り、この場合絶縁層は発光層の片側のみに積層したもの
（一重絶縁層構造）及び絶縁層を発光層の両側に積層し
たもの（二重絶縁層構造）が用いられている。この薄膜
ＥＬ素子は、上記両電極間に電圧を印加するとこれら電
極間に発生する電界により発光層が発光するものであ
る。2. Description of the Related Art Conventionally, the problems to be solved by the invention
As a thin film EL element, a transparent electrode formed by forming a transparent conductive layer such as ITO on a transparent insulator such as a glass substrate and a back electrode are faced to each other, and an insulating layer is laminated between these electrodes to emit light. It is known to interpose a layer. In this case, the insulating layer is laminated only on one side of the light emitting layer (single insulating layer structure) and the insulating layer is laminated on both sides of the light emitting layer (double insulating layer structure). ) Is used. In this thin film EL element, when a voltage is applied between the electrodes, the light emitting layer emits light due to the electric field generated between the electrodes.
【０００３】しかし、従来のこの種の薄膜ＥＬ素子は、
上記絶縁膜としてＳｉＯ2，Ａｌ2Ｏ3，Ｓｉ3Ｎ4等を用
い、これを蒸着法やスパッタリング法により形成してい
たが、蒸着法やスパッタリング法によって形成した絶縁
層は薄膜ＥＬ素子の輝度が低いという問題がある。However, the conventional thin film EL device of this type is
Although SiO 2 , Al 2 O 3 , Si 3 N 4 or the like was used as the insulating film and was formed by a vapor deposition method or a sputtering method, the insulating layer formed by the vapor deposition method or the sputtering method has a brightness of a thin film EL element. There is a problem that is low.
【０００４】これに対処するため、電子ビーム蒸発法に
よって絶縁層を形成する方法が提案されている（特開平
２−１９５６８４号、１９５６８５号公報など）が、電
子ビームはコスト高であり、しかも十分に緻密な膜を形
成し得ないため、絶縁破壊し易い等の問題がある。In order to deal with this, a method of forming an insulating layer by an electron beam evaporation method has been proposed (Japanese Patent Laid-Open Nos. 2-195648 and 195685, etc.), but the electron beam is expensive and sufficient. Since a dense film cannot be formed, there is a problem that dielectric breakdown easily occurs.
【０００５】本発明は、上記事情に鑑みなされたもの
で、高耐圧性を有し、絶縁破壊を起こし難く、発光輝度
が高い上、コスト的に安価な薄膜ＥＬ素子を提供するこ
とを目的とする。The present invention has been made in view of the above circumstances, and an object thereof is to provide a thin film EL element having high withstand voltage, less likely to cause dielectric breakdown, high in emission brightness, and inexpensive in cost. To do.
【０００６】[0006]
【課題を解決するための手段及び作用】本発明者らは、
上記目的を達成するため鋭意検討を行った結果、絶縁層
をビームプラズマ発生装置又はシートプラズマ発生装置
を用いた大気圧下における非平衡低温プラズマ法により
形成すること、特にテトラアルコキシチタンを原料ガス
に用いて非平衡低温プラズマ法によって形成することが
有効であることを知見した。Means and Actions for Solving the Problems The present inventors have
As a result of intensive studies to achieve the above object, an insulating layer is formed by a non-equilibrium low-temperature plasma method under atmospheric pressure using a beam plasma generator or a sheet plasma generator, in particular tetraalkoxytitanium as a source gas It was found that it is effective to form by the non-equilibrium low temperature plasma method.
【０００７】即ち、大気圧下における非平衡低温プラズ
マ法により堆積形成された絶縁層（特にＴｉＯx（ｘ＝
１〜２）からなる絶縁層）は、誘電率が高いため、低イ
ンピーダンス層となる。このため発光層上に効率よく電
圧を印加できる。更に、この絶縁層は、高耐圧性に優れ
るため、従来に比べて高電圧となり、従って発光輝度を
高くし得るものであることを見い出し、本発明をなすに
至ったものである。That is, an insulating layer (especially TiO x (x = x ) formed and deposited by the non-equilibrium low temperature plasma method under atmospheric pressure.
The insulating layer consisting of 1 to 2) has a high dielectric constant and thus becomes a low impedance layer. Therefore, a voltage can be efficiently applied to the light emitting layer. Further, since this insulating layer is excellent in high withstand voltage, it has been found that the insulating layer has a higher voltage than that of the conventional one, and therefore the emission brightness can be increased, and the present invention has been completed.
【０００８】従って、本発明は、透明電極と背面電極と
の間に、少なくとも一側に絶縁層を積層した発光層を介
在させてなる薄膜ＥＬ素子において、前記絶縁層がビー
ムプラズマ発生装置又はシートプラズマ発生装置を用い
た大気圧下における非平衡低温プラズマ法により形成さ
れたものであることを特徴とする薄膜ＥＬ素子を提供す
る。Therefore, according to the present invention, in a thin film EL element in which a light emitting layer having an insulating layer laminated on at least one side is interposed between a transparent electrode and a back electrode, the insulating layer is a beam plasma generator or a sheet. Provided is a thin film EL element which is formed by a non-equilibrium low temperature plasma method under atmospheric pressure using a plasma generator.
【０００９】以下、本発明につき更に詳しく説明する
と、本発明の薄膜ＥＬ素子は、例えば図１，２に示すよ
うに、透明電極１と背面電極２との間に、発光層３をそ
の一側又は両側に絶縁層４を積層した状態で介装した一
重絶縁層型又は二重絶縁層型のものである。The present invention will be described in more detail below. In the thin film EL device of the present invention, as shown in FIGS. 1 and 2, for example, a light emitting layer 3 is provided between a transparent electrode 1 and a back electrode 2 on one side thereof. Alternatively, it is a single insulating layer type or a double insulating layer type in which insulating layers 4 are laminated on both sides.
【００１０】この場合、透明電極１、背面電極２、発光
層３としては、公知の構成、材料のものとすることがで
き、例えば透明電極１は、ガラス基体１ａ上にＩＴＯ，
ＺｎＯ／Ａｌ，ＳｎＯ2などの薄膜１ｂを形成したもの
を使用することができ、これは光の取り出し窓となるも
のである。一方、背面電極２としては、アルミニウムな
どの金属薄膜が用いられる。なお、薄膜の成膜方法とし
ては、蒸着、スパッタリング法などの公知の方法を採用
して行うことができ、また膜厚は５０Å〜２ｎｍとする
ことができる。発光層３としては、必要とする発光色に
応じて材質を選択することができ、例えばＺｎＳを母材
として用い、Ｍｎ2+を成膜したものなどを使用し得る。In this case, the transparent electrode 1, the back electrode 2 and the light emitting layer 3 may have known structures and materials. For example, the transparent electrode 1 is formed of ITO on the glass substrate 1a,
A thin film 1b formed of ZnO / Al, SnO 2 or the like can be used, which serves as a light extraction window. On the other hand, as the back electrode 2, a metal thin film such as aluminum is used. As a method for forming the thin film, a known method such as vapor deposition or sputtering can be adopted, and the film thickness can be set to 50Å to 2 nm. The material of the light emitting layer 3 can be selected according to the required emission color, and for example, ZnS can be used as a base material and Mn 2+ can be formed into a film.
【００１１】本発明の薄膜ＥＬ素子は、上記絶縁層４を
大気圧下における非平衡低温プラズマ法により形成す
る。この場合、原料ガスとしては、Ｔｉ（ＯＣ
2Ｈ5）4，Ｔｉ（ＯＣ3Ｈ7）4などのアルコキシチタン、
特にテトラアルコキシチタンを用いてＴｉＯx（ｘ＝１
〜２）にて絶縁層を形成することが好ましく、これによ
り本発明の目的をより有利に達成することができるが、
大気圧下における非平衡低温プラズマ法によって絶縁層
を形成し得るものであれば、いずれのものでもよく、例
えば放電をビーム状としてもシート状としてもよい。こ
の絶縁層の厚さは適宜選定されるが、通常５０〜２００
０ｎｍである。In the thin film EL device of the present invention, the insulating layer 4 is formed by the nonequilibrium low temperature plasma method under atmospheric pressure. In this case, the raw material gas is Ti (OC
Alkoxy titanium such as 2 H 5 ) 4 and Ti (OC 3 H 7 ) 4 ,
In particular, using tetraalkoxy titanium, TiO x (x = 1
It is preferable to form the insulating layer in 2) to 2), whereby the object of the present invention can be achieved more advantageously,
Any material may be used as long as the insulating layer can be formed by the non-equilibrium low temperature plasma method under atmospheric pressure. For example, the discharge may be beam-shaped or sheet-shaped. The thickness of this insulating layer is appropriately selected, but is usually 50 to 200.
It is 0 nm.
【００１２】また、本方法を実施する場合、原料ガスに
加えてＡｒ，Ｎ2，Ｈｅ，Ｈ2，Ｏ2，空気などの希釈ガ
スを目的に応じて選定使用することができる。ここで、
上記絶縁層を形成する原料がガスではなく、液状の場
合、この液状原料を適当な希釈ガスでバブリングして放
電部へ導入することができる。When the present method is carried out, diluent gases such as Ar, N 2 , He, H 2 , O 2 and air can be selected and used according to the purpose in addition to the raw material gas. here,
When the raw material for forming the insulating layer is not gas but liquid, the liquid raw material can be bubbled with an appropriate diluent gas and introduced into the discharge part.
【００１３】本方法では、アノードとカソードの間に交
流電圧を印加することにより、大気圧下で低温プラズマ
を発生することができ、この場合周波数１３．５６ＭＨ
ｚの高周波を使用することができる。またカソード材質
は放電により損傷しにくいものを用いることが好まし
く、ＴｉＯx成膜の場合はＴｉを用いることができる。
なお、その他の条件としては、大気圧下における非平衡
低温プラズマ法として公知の通常の条件を採用すること
ができ、その装置としては図３に示すビームプラズマ発
生装置（断面図）、図４に示すシートプラズマ発生装置
（断面図）などを使用して行うことができる。なお、図
中１１はアノード、１２はカソード、１３は絶縁層（石
英，アルミナ，ＹＳＺ，ＳｒＴｉＯ3，ＰｂＴｉＯ3−Ｐ
ｂＺｎＯなど）、１４はガス導入口、１５はプラズマ発
生域、１６はスペーサーである。In this method, low-temperature plasma can be generated under atmospheric pressure by applying an AC voltage between the anode and the cathode. In this case, the frequency is 13.56 MH.
High frequencies of z can be used. Further, it is preferable to use a cathode material that is not easily damaged by discharge, and Ti can be used in the case of TiO x film formation.
As other conditions, ordinary conditions known as a non-equilibrium low temperature plasma method under atmospheric pressure can be adopted, and the apparatus is a beam plasma generator (cross-sectional view) shown in FIG. It can be performed using the sheet plasma generator shown (cross-sectional view) or the like. In the figure, 11 is an anode, 12 is a cathode, 13 is an insulating layer (quartz, alumina, YSZ, SrTiO 3 , PbTiO 3 -P).
bZnO), 14 is a gas inlet, 15 is a plasma generation region, and 16 is a spacer.
【００１４】[0014]
【実施例】以下、実施例により本発明を具体的に説明す
るが、本発明は下記の実施例に制限されるものではな
い。EXAMPLES The present invention will be described in detail below with reference to examples, but the present invention is not limited to the following examples.
【００１５】まず、ガラス基板上に真空蒸着法によりＩ
ＴＯ膜を１００ｎｍの厚さに成膜し、その上に大気圧下
において図３の装置を用い、下記条件を採用して非平衡
低温プラズマ法によりＴｉＯ2膜を３００ｎｍ成膜し
た。
ガス：Ｔｉ（ＯＣ2Ｈ5）4 ０．０５ＳＣＣＭ
Ｎ2〔Ｔｉ（ＯＣ2Ｈ5）4のバブリング用〕 ３０ 〃
Ａｒ ３００ 〃
ＲＦ（高周波）電源：１２０Ｗ，１３．５６ＭＨｚ
カソード：Ｔｉ
処理時間：３０秒First, I is formed on a glass substrate by vacuum deposition.
A TO film having a thickness of 100 nm was formed, and a TiO 2 film having a thickness of 300 nm was formed thereon by the nonequilibrium low temperature plasma method under the following conditions using the apparatus shown in FIG. Gas: Ti (OC 2 H 5 ) 4 0.05SCCM N 2 [For bubbling of Ti (OC 2 H 5 ) 4 ] 30〃 Ar 300〃 RF (high frequency) Power source: 120W, 13.56MHz Cathode: Ti Treatment time: 30 seconds
【００１６】得られたＴｉＯ2膜は緻密であり、上記Ｉ
ＴＯを成膜したガラス基板上に優れた密着性を持って形
成された。The TiO 2 film obtained was dense and had the above-mentioned I content.
It was formed with excellent adhesion on the glass substrate on which TO was formed.
【００１７】次に、上記ＴｉＯ2膜上に、硫黄雰囲気下
におけるＺｎＳ：Ｍｎ2+の電子ビーム蒸着法により発光
層を６００ｎｍ厚に成膜後、上記と同様の大気圧非平衡
低温プラズマ法により３００ｎｍの絶縁層（ＴｉＯ
2層）を形成し、更にその上に真空蒸着法により５０ｎ
ｍの背面電極（Ａｌ膜）を形成し、図２に示す二重絶縁
層型の薄膜ＥＬ素子を得た。Then, a light emitting layer was formed to a thickness of 600 nm on the TiO 2 film by an electron beam vapor deposition method of ZnS: Mn 2+ in a sulfur atmosphere, and then the atmospheric pressure non-equilibrium low temperature plasma method similar to the above was used. 300 nm insulating layer (TiO
2 layers), and further 50n by vacuum evaporation method
A back electrode (Al film) of m was formed to obtain a double insulating layer type thin film EL element shown in FIG.
【００１８】このようにして得られたＥＬ素子は、その
絶縁層の比誘電率Ｅｒが約４８と高く、また絶縁破壊電
界が１０7Ｖ／ｃｍ以上と高いものであり、例えば周波
数５ｋＨｚ正弦波の電圧を印加する場合、高電圧（実効
値６００Ｖ）を印加してもＥＬ素子の破壊もなく、発光
層に有効に電界が印加されて高輝度発光が実現した。更
に、絶縁層としてＳｉ3Ｎ4，ＳｉＯ2，Ａｌ2Ｏ3，Ｓｉ
ＴｉＯ3を用いた従来のＥＬ素子と比較して同じ電圧で
も発光輝度が高いものであった。なお、この従来のＥＬ
素子は、４００Ｖ以上の高電圧を印加すると破壊が生じ
るものであった。The EL device thus obtained is
The dielectric constant Er of the insulating layer is as high as about 48, and the dielectric breakdown voltage is high.
World is 107Higher than V / cm, for example, frequency
When applying a voltage of several 5 kHz sine wave, high voltage (effective
Even if a value of 600 V) is applied, the EL element does not break down and emits light.
An electric field was effectively applied to the layer to realize high-luminance light emission. Change
And Si as an insulating layer3NFour, SiO2, Al2O3, Si
TiO3With the same voltage compared to the conventional EL element using
Also had high emission brightness. In addition, this conventional EL
The device will be destroyed if a high voltage of 400 V or more is applied.
It was something.
【００１９】[0019]
【発明の効果】本発明によれば、絶縁層を大気圧下にお
ける非平衡低温プラズマ法により堆積形成したことによ
り、該絶縁層の誘電率が高く、高耐圧性であるため、素
子の高耐圧を維持しながら輝度の向上を達成できる薄膜
ＥＬ素子を提供することができる。According to the present invention, since the insulating layer is deposited and formed by the non-equilibrium low temperature plasma method under the atmospheric pressure, the insulating layer has a high dielectric constant and a high withstand voltage. It is possible to provide a thin film EL device capable of achieving improvement in brightness while maintaining the above.
【図１】一重絶縁層型薄膜ＥＬ素子の断面図である。FIG. 1 is a cross-sectional view of a single insulating layer type thin film EL element.
【図２】二重絶縁層型薄膜ＥＬ素子の断面図である。FIG. 2 is a cross-sectional view of a double insulating layer type thin film EL element.
【図３】ビームプラズマ発生装置の説明図である。FIG. 3 is an explanatory diagram of a beam plasma generator.
【図４】シートプラズマ発生装置の説明図である。FIG. 4 is an explanatory diagram of a sheet plasma generator.
１ 透明電極 ２ 背面電極 ３ 発光層 ４ 絶縁層 １１ アノード １２ カソード １３ 絶縁層 １５ プラズマ発生域 1 transparent electrode 2 Back electrode 3 light emitting layer 4 insulating layers 11 Anode 12 cathode 13 Insulation layer 15 Plasma generation area
フロントページの続き (56)参考文献 特開 平２−267272（ＪＰ，Ａ) 特開 平４−235283（ＪＰ，Ａ) 特開 昭61−296680（ＪＰ，Ａ) 特開 平６−330326（ＪＰ，Ａ) 特開 平７−310186（ＪＰ，Ａ) 実開 平６−16463（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H05B 33/00 - 33/28 Continuation of front page (56) Reference JP-A-2-267272 (JP, A) JP-A-4-235283 (JP, A) JP-A-61-296680 (JP, A) JP-A-6-330326 (JP , A) Japanese Unexamined Patent Publication No. 7-310186 (JP, A) Actual development No. 6-16463 (JP, U) (58) Fields investigated (Int.Cl. 7 , DB name) H05B 33/00-33/28
Claims (4)
も一側に絶縁層を積層した発光層を介在させてなる薄膜
エレクトロルミネセンス素子において、前記絶縁層がビ
ームプラズマ発生装置又はシートプラズマ発生装置を用
いた大気圧下における非平衡低温プラズマ法により形成
されたものであることを特徴とする薄膜エレクトロルミ
ネセンス素子。1. A thin film electroluminescent device comprising a light emitting layer having an insulating layer laminated on at least one side between a transparent electrode and a back electrode, wherein the insulating layer is a beam plasma generator or a sheet plasma generator. A thin film electroluminescent device, which is formed by a non-equilibrium low temperature plasma method using an apparatus at atmospheric pressure.
により形成された請求項１記載の素子。2. The insulating layer is TiO x (where x = 1 to 2)
The device according to claim 1, which is formed by:
て用いて非平衡低温プラズマ法によりＴｉＯx層を形成
した請求項２記載の素子。3. The device according to claim 2, wherein a TiO x layer is formed by a nonequilibrium low temperature plasma method using tetraalkoxytitanium as a source gas.
以上である請求項１乃至３のいずれか１項記載の素子。4. A breakdown field of the insulating layer 10 7 V / cm
The element according to any one of claims 1 to 3, which is the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04657595A JP3511719B2 (en) | 1995-02-10 | 1995-02-10 | Thin film electroluminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04657595A JP3511719B2 (en) | 1995-02-10 | 1995-02-10 | Thin film electroluminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08222370A JPH08222370A (en) | 1996-08-30 |
| JP3511719B2 true JP3511719B2 (en) | 2004-03-29 |
Family
ID=12751109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04657595A Expired - Fee Related JP3511719B2 (en) | 1995-02-10 | 1995-02-10 | Thin film electroluminescent device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3511719B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2249413A3 (en) * | 2002-04-01 | 2011-02-02 | Konica Corporation | Support and organic electroluminescence element comprising the support |
-
1995
- 1995-02-10 JP JP04657595A patent/JP3511719B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08222370A (en) | 1996-08-30 |
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