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JP3512576B2 - Silicon casting equipment - Google Patents
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JP3512576B2 - Silicon casting equipment - Google Patents

Silicon casting equipment

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Publication number
JP3512576B2
JP3512576B2 JP28797296A JP28797296A JP3512576B2 JP 3512576 B2 JP3512576 B2 JP 3512576B2 JP 28797296 A JP28797296 A JP 28797296A JP 28797296 A JP28797296 A JP 28797296A JP 3512576 B2 JP3512576 B2 JP 3512576B2
Authority
JP
Japan
Prior art keywords
mold
raw material
silicon
material supply
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28797296A
Other languages
Japanese (ja)
Other versions
JPH10139586A (en
Inventor
芳明 湯本
勝彦 白沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP28797296A priority Critical patent/JP3512576B2/en
Publication of JPH10139586A publication Critical patent/JPH10139586A/en
Application granted granted Critical
Publication of JP3512576B2 publication Critical patent/JP3512576B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明はシリコン鋳造装置に
関し、特に鋳型内にシリコン原料を供給して加熱溶融さ
せた後に、一方向性凝固させて鋳塊を作るシリコン鋳造
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon casting apparatus, and more particularly, to a silicon casting apparatus for supplying a silicon raw material into a mold, heating and melting the raw material, and then unidirectionally solidifying it to form an ingot.

【0002】[0002]

【従来の技術】従来のシリコン鋳造装置を図3に示す。
図3において、11はグラファイトなどから成る鋳型、
12は冷却板、13は抵抗加熱ヒータ、14はグラファ
イトなどから成る断熱壁である。このシリコン鋳造装置
では、鋳型11の内壁面に窒化珪素や炭化珪素などを主
成分とする離型材を塗布して、この鋳型11内にシリコ
ン原料17を供給し、このシリコン原料17をヒータ1
3で1500℃程度に加熱して溶融し、鋳型11を徐々
に下降させてシリコン融液17をヒータ13から徐々に
離して冷却し、あるいは鋳型11の位置はそのままでヒ
ータ13の温度を下げて冷却し、この鋳型11内でシリ
コン融液を一方向性凝固させて鋳塊を形成するものであ
る(例えば米国特許第 3,898,051号、5th Internationa
l PVSEC p303〜305 )。この一方向性凝固したシリコン
融液17の鋳塊は、鋳型11を破壊することにより、鋳
型11から取り出したり、もしくは組立型鋳型の場合
は、鋳型11を分解して取り出す。
2. Description of the Related Art A conventional silicon casting apparatus is shown in FIG.
In FIG. 3, 11 is a mold made of graphite or the like,
Reference numeral 12 is a cooling plate, 13 is a resistance heater, and 14 is a heat insulating wall made of graphite or the like. In this silicon casting apparatus, a mold release material containing silicon nitride or silicon carbide as a main component is applied to the inner wall surface of the mold 11, a silicon raw material 17 is supplied into the mold 11, and the silicon raw material 17 is supplied to the heater 1.
3 to 1500 ° C. to melt and melt, and then gradually lower the mold 11 to gradually separate the silicon melt 17 from the heater 13 and cool it, or lower the temperature of the heater 13 with the position of the mold 11 unchanged. It is cooled and the silicon melt is unidirectionally solidified in the mold 11 to form an ingot (for example, US Pat. No. 3,898,051, 5th Internationa).
l PVSEC p303-305). The ingot of the unidirectionally solidified silicon melt 17 is taken out from the mold 11 by breaking the mold 11, or in the case of an assembled mold, the mold 11 is disassembled and taken out.

【0003】[0003]

【発明が解決しようする課題】ところが、このようなシ
リコンの鋳造方法に用いられるシリコン原料17の嵩比
重は通常1.0〜1.5で、シリコンの比重2.33に
比べて半分程度しかない。このため、図3に示す従来の
シリコン鋳造装置では、シリコン融液が凝固して形成さ
れた鋳塊17の高さは鋳型11の半分程度しかない。鋳
型11及びこの鋳型11の内壁面に塗布される離型材
(不図示)は高価な消耗品であり、ランニングコストに
占める割合が大きい。したがって、従来技術では、でき
る鋳塊17が小さいのに対して、必要な鋳型11は大き
いため、鋳塊17の重量当たりの鋳型11及び鋳型離型
材が高コストになるという問題があった。
However, the bulk specific gravity of the silicon raw material 17 used in such a method for casting silicon is usually 1.0 to 1.5, which is only about half the specific gravity of silicon which is 2.33. . Therefore, in the conventional silicon casting apparatus shown in FIG. 3, the height of the ingot 17 formed by solidifying the silicon melt is only about half that of the mold 11. The mold 11 and a mold release material (not shown) applied to the inner wall surface of the mold 11 are expensive consumables and occupy a large proportion of the running cost. Therefore, in the prior art, since the ingot 17 that can be formed is small, but the required mold 11 is large, there is a problem that the cost of the mold 11 and the mold release material per weight of the ingot 17 becomes high.

【0004】本発明は、このような従来装置の問題点に
鑑みて発明されたものであり、鋳塊の重量当たりの鋳型
及び鋳型離型材のコストが大きくなることを解消したシ
リコン鋳造装置を提供することを目的とする。
The present invention has been invented in view of the above problems of the conventional apparatus, and provides a silicon casting apparatus in which the cost of the mold and the mold releasing material per weight of the ingot is increased. The purpose is to do.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明に係るシリコン鋳造装置では、鋳型の周囲に
鋳型内のシリコン原料を加熱溶融させるためのヒータを
設け、このヒータと鋳型を断熱壁で覆ったシリコン鋳造
装置において、前記断熱壁の上部に可動扉を設け、この
可動扉上に複数個の原料供給タンクを設け、この原料供
給タンクから前記鋳型内にシリコン原料を供給できるよ
うにした。
In order to achieve the above object, in the silicon casting apparatus according to the present invention, a heater for heating and melting the silicon raw material in the mold is provided around the mold, and the heater and the mold are provided. In a silicon casting apparatus covered with a heat insulation wall, a movable door is provided above the heat insulation wall, a plurality of raw material supply tanks are provided on the movable door, and a silicon raw material can be supplied from the raw material supply tank into the mold. I chose

【0006】[0006]

【発明の実施の形態】以下、本発明を添付図面に基づき
詳細に説明する。図1は、本発明に係るシリコン鋳造装
置の一実施形態を示す断面図であり、1はグラファイト
などから成る鋳型、2はその内部で水など冷媒が循環す
る冷却板、3は抵抗加熱ヒータ、4はグラファイトなど
から成る断熱壁、5a、5bは断熱壁の上部に設けられ
た原料供給タンクである。このような鋳型1や断熱壁4
等は全て真空容器(不図示)内に設置される。
DETAILED DESCRIPTION OF THE INVENTION The present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing an embodiment of a silicon casting apparatus according to the present invention, 1 is a mold made of graphite or the like, 2 is a cooling plate in which a coolant such as water circulates, 3 is a resistance heater, Reference numeral 4 is a heat insulating wall made of graphite or the like, and 5a and 5b are raw material supply tanks provided above the heat insulating wall. Such mold 1 and heat insulation wall 4
Etc. are all installed in a vacuum container (not shown).

【0007】本発明では鋳型1の上部に、ステンレス鋼
などから成る原料供給タンク5a、5bを設ける。この
原料供給タンク5a、5bも鋳型1と共に真空容器内に
設置する。断熱材4の上部に開口部4aを設け、その上
に、シリコン原料を落とし込むためのステンレス鋼など
から成る漏斗6を設ける。漏斗6の上に原料供給タンク
5a、5bを設置する。原料供給タンク5a、5bの下
部にはシリコン原料の落とし口5cを設け、その下に蓋
5dを設ける。シリコン原料を鋳型1に追加供給すると
きは、この蓋5dをあけて原料供給タンク5a、5b内
のシリコン原料を漏斗6を通して鋳型1内へ落とす。蓋
5dの板は、ヒンジ5eを中心に回動し、蓋5dが閉じ
られた状態で水平になるようにする。すなわち、例えば
回転軸(不図示)を真空容器の外まで延在させ、この回
転軸を真空容器の外で直接回して蓋5dを開閉する。
In the present invention, raw material supply tanks 5a and 5b made of stainless steel or the like are provided above the mold 1. The raw material supply tanks 5a and 5b are also installed in the vacuum container together with the mold 1. An opening 4a is provided above the heat insulating material 4, and a funnel 6 made of stainless steel or the like for dropping the silicon raw material is provided on the opening 4a. The raw material supply tanks 5a and 5b are installed on the funnel 6. A silicon material dropping port 5c is provided below the raw material supply tanks 5a and 5b, and a lid 5d is provided below the dropping port 5c. When the silicon raw material is additionally supplied to the mold 1, the lid 5d is opened and the silicon raw material in the raw material supply tanks 5a and 5b is dropped into the mold 1 through the funnel 6. The plate of the lid 5d rotates about the hinge 5e so that the lid 5d becomes horizontal in the closed state. That is, for example, a rotary shaft (not shown) is extended to the outside of the vacuum container, and this rotary shaft is directly rotated outside the vacuum container to open / close the lid 5d.

【0008】また、図2に示すように、蓋5dの大きさ
は落とし口5cの内寸よりいくらか大きくする。蓋5d
をこのようにすると、落とし口5cと蓋5dの間に多少
の間隔があってもシリコン原料8は、蓋5dから下へこ
ぼれ落ちることはない。シリコン原料の場合、図2の各
αは約30°となるため、蓋5dは落とし口5cの内寸
より片側で間隔の3倍以上大きくしておくとよい。すな
わち、原料供給タンク5a、5b下部の間隔Xと蓋5d
の張り出し寸法Yは、Y≧3Xとする。また、落とし口
5cと蓋5dとの間に間隔を持たせることによって、蓋
5dを安定して開閉できると共に、シリコン原料8を安
定して供給できる。漏斗6と断熱壁4の開口部4aとの
間には、図1のように、可動式扉4bを設け、シリコン
原料8を落とすときのみ、この可動式扉4bを真空容器
の外に設けたエアーシリンダーなどで横へずらすように
すれば熱効率がよい。
Further, as shown in FIG. 2, the size of the lid 5d is made somewhat larger than the inner size of the drop opening 5c. Lid 5d
In this way, the silicon raw material 8 does not spill down from the lid 5d even if there is a slight gap between the outlet 5c and the lid 5d. In the case of a silicon raw material, since each α in FIG. 2 is about 30 °, it is advisable to make the lid 5d larger than the inner dimension of the drop opening 5c by 3 times or more the spacing on one side. That is, the space X and the lid 5d below the raw material supply tanks 5a and 5b.
The overhanging dimension Y of is Y ≧ 3X. Further, by providing a space between the outlet 5c and the lid 5d, the lid 5d can be stably opened and closed, and the silicon raw material 8 can be stably supplied. A movable door 4b is provided between the funnel 6 and the opening 4a of the heat insulating wall 4 as shown in FIG. 1, and the movable door 4b is provided outside the vacuum container only when the silicon raw material 8 is dropped. Thermal efficiency is good if you use an air cylinder to shift it sideways.

【0009】原料供給タンク5a、5bを二つ設けた場
合の鋳造方法は次の通りである。まず、鋳型1内に予め
供給されているシリコン原料8をヒータ3で加熱して溶
融させる。次に、シリコン原料8が溶融して鋳型1上部
に空きができたら、第一の原料供給タンク5a内のシリ
コン原料8を鋳型1内へ供給する。次に、追加供給した
シリコン原料8が溶融して鋳型1上部に空きができた
ら、第二の原料供給タンク5b内のシリコン原料8を鋳
型1内へ供給する。最後に、すべてのシリコン原料8が
溶融したら、ヒータ3の出力を下げて一方向性凝固させ
る。
The casting method when two raw material supply tanks 5a and 5b are provided is as follows. First, the silicon raw material 8 previously supplied into the mold 1 is heated by the heater 3 to be melted. Next, when the silicon raw material 8 is melted and a space is formed above the mold 1, the silicon raw material 8 in the first raw material supply tank 5a is supplied into the mold 1. Next, when the additionally supplied silicon raw material 8 is melted and an empty space is formed above the mold 1, the silicon raw material 8 in the second raw material supply tank 5b is supplied into the mold 1. Finally, when all the silicon raw materials 8 are melted, the output of the heater 3 is reduced to unidirectionally solidify.

【0010】シリコンを鋳造する場合は、すべてのシリ
コン原料8が溶融したときの融液の量が鋳型1の有効深
さの9割になるようにする。そうすれば、シリコンの固
体はシリコンの融液に比べて約1割嵩が大きいので、出
来上がった鋳塊7の高さが鋳型1の有効深さと同じにな
る。追加供給したシリコン原料8も溶融すると嵩が減る
ため、原料供給タンク5a、5bが一個では、鋳型1の
有効深さ全てを利用することは難しい。原料供給タンク
数を多くすれば、鋳型1の有効深さすべてを利用できる
が、装置の制作費が高くなる。したがって、原料供給タ
ンクの数は、3〜5が適当である。
When casting silicon, the amount of melt when all the silicon raw materials 8 are melted is set to 90% of the effective depth of the mold 1. Then, since the solid of silicon has a bulk that is about 10% larger than that of the melt of silicon, the height of the finished ingot 7 becomes the same as the effective depth of the mold 1. Since the bulk of the additionally supplied silicon raw material 8 is also reduced when melted, it is difficult to use the entire effective depth of the mold 1 with one raw material supply tank 5a, 5b. If the number of raw material supply tanks is increased, the entire effective depth of the mold 1 can be used, but the production cost of the apparatus increases. Therefore, it is suitable that the number of raw material supply tanks is 3 to 5.

【0011】[0011]

【発明の効果】以上のように、本発明に係るシリコン鋳
造装置によれば、鋳型の周囲に鋳型内のシリコン原料を
加熱溶融させるためのヒータを設け、このヒータと鋳型
を断熱壁で覆ったシリコン鋳造装置において、前記断熱
壁の上部に可動扉を設け、この可動扉上に複数個の原料
供給タンクを設けて、この原料供給タンクから前記鋳型
内にシリコン原料を供給できるようにしたことから、鋳
型の深さを有効に利用してシリコンが鋳造できるため、
鋳塊重量当たりの鋳型及び鋳型離型材コストが小さくな
る。同じ高さの鋳型で鋳造する場合、鋳塊の重量は従来
方法の約2倍になる。また、シリコン原料の追加供給方
法がシンプルなため、低コストで、且つ、信頼性が高
い。直径0.1mm程度の微細なシリコン原料から、直
径100mm程度の大きなシリコン原料まで同一の装置
で追加供給できる。
As described above, according to the silicon casting apparatus of the present invention, the heater for heating and melting the silicon raw material in the mold is provided around the mold, and the heater and the mold are covered with the heat insulating wall. In the silicon casting apparatus, a movable door is provided above the heat insulating wall, and a plurality of raw material supply tanks are provided on the movable door so that the silicon raw material can be supplied from the raw material supply tank into the mold. Since silicon can be cast by effectively utilizing the depth of the mold,
The cost of the mold and mold release material per weight of the ingot is reduced. When casting in a mold of the same height, the weight of the ingot is about twice that of the conventional method. Further, since the method of additionally supplying the silicon raw material is simple, the cost is low and the reliability is high. It is possible to additionally supply from a fine silicon raw material having a diameter of about 0.1 mm to a large silicon raw material having a diameter of about 100 mm with the same apparatus.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係るシリコン鋳造装置の一実施形態を
示す図である。
FIG. 1 is a diagram showing an embodiment of a silicon casting apparatus according to the present invention.

【図2】本発明に係るシリコン鋳造装置の原料供給タン
ク部を示す図である。
FIG. 2 is a view showing a raw material supply tank section of the silicon casting apparatus according to the present invention.

【図3】従来のシリコン鋳造装置を示す図である。FIG. 3 is a diagram showing a conventional silicon casting apparatus.

【符号の説明】[Explanation of symbols]

1・・・鋳型、2・・・冷却板、3・・・ヒータ、4・
・・断熱壁、5・・・原料供給タンク
1 ... Mold, 2 ... Cooling plate, 3 ... Heater, 4 ...
..Insulation walls, 5 ... Raw material supply tanks

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C01B 33/00 - 33/02 C30B 1/00 - 35/00 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) C01B 33/00-33/02 C30B 1/00-35/00

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 鋳型の周囲に鋳型内のシリコン原料を加
熱溶融させるためのヒータを設け、このヒータと鋳型を
断熱壁で覆ったシリコン鋳造装置において、前記断熱壁
の上部に可動扉を設け、この可動扉上に複数個の原料供
給タンクを設け、この原料供給タンクから前記鋳型内に
シリコン原料を供給できるようにしたことを特徴とする
シリコン鋳造装置。
1. In a silicon casting apparatus in which a heater for heating and melting the silicon raw material in the mold is provided around the mold, and the heater and the mold are covered with a heat insulating wall, a movable door is provided above the heat insulating wall, A plurality of raw material supply tanks are provided on the movable door, and a silicon raw material can be supplied into the mold from the raw material supply tanks.
【請求項2】 前記原料供給タンクの下部に間隔をおい
て蓋を設け、この蓋の原料供給タンクからの張り出し寸
法が前記間隔の3倍以上あることを特徴とする請求項1
に記載のシリコン鋳造装置。
2. A lid is provided at a lower portion of the raw material supply tank at an interval, and a dimension of the lid protruding from the raw material supply tank is three times or more the interval.
The silicon casting apparatus described in 1.
JP28797296A 1996-10-30 1996-10-30 Silicon casting equipment Expired - Fee Related JP3512576B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28797296A JP3512576B2 (en) 1996-10-30 1996-10-30 Silicon casting equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28797296A JP3512576B2 (en) 1996-10-30 1996-10-30 Silicon casting equipment

Publications (2)

Publication Number Publication Date
JPH10139586A JPH10139586A (en) 1998-05-26
JP3512576B2 true JP3512576B2 (en) 2004-03-29

Family

ID=17724142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28797296A Expired - Fee Related JP3512576B2 (en) 1996-10-30 1996-10-30 Silicon casting equipment

Country Status (1)

Country Link
JP (1) JP3512576B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3872233B2 (en) * 1999-06-29 2007-01-24 京セラ株式会社 Silicon casting method
KR200460497Y1 (en) 2010-08-23 2012-05-23 김덕조 Structure of a fermentation lock
TWI586457B (en) * 2014-06-16 2017-06-11 中美矽晶製品股份有限公司 Containing device of ingot casting furnace for containing materials of ingot and method of casting ingot

Also Published As

Publication number Publication date
JPH10139586A (en) 1998-05-26

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