JP3522940B2 - Boron diffusion coating solution - Google Patents
Boron diffusion coating solutionInfo
- Publication number
- JP3522940B2 JP3522940B2 JP35072895A JP35072895A JP3522940B2 JP 3522940 B2 JP3522940 B2 JP 3522940B2 JP 35072895 A JP35072895 A JP 35072895A JP 35072895 A JP35072895 A JP 35072895A JP 3522940 B2 JP3522940 B2 JP 3522940B2
- Authority
- JP
- Japan
- Prior art keywords
- boron
- diffusion
- coating liquid
- coating
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/19—Diffusion sources
Landscapes
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、新規なホウ素拡散
用塗布液、さらに詳しくはシリコン半導体の表面にホウ
素を拡散するための新規なホウ素拡散用塗布液に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a new boron diffusion coating liquid, and more particularly to a new boron diffusion coating liquid for diffusing boron on the surface of a silicon semiconductor.
【０００２】[0002]
【従来技術】トランジスタ、ダイオード、ＩＣ等の製造
にはホウ素が拡散したＰ型領域を有するシリコン半導体
デバイスが使用されている。前記シリコン半導体デバイ
スにホウ素を拡散する方法としては熱分解法、対向ＮＢ
法、ドーパントホスト法、塗布法等が検討されたが、特
に塗布法が高価な装置を必要としないで均一な拡散がで
き、量産性に優れているところから好適に使用されてい
る。中でもホウ素を含有する塗布液をスピンコーター等
を用いて塗布するのがよい。ところが、従来の塗布液は
含有するホウ素化合物が白濁し易く、拡散後のデバイス
の抵抗値のバラツキや形成ジャンクションの乱れが発生
し、高濃度の拡散が困難であった。そのためホウ素化合
物と多価アルコールとの反応生成物を含有するホウ素拡
散用塗布液を用い、高濃度で、再現性よくホウ素を拡散
する方法が本出願人により特公昭６２−２７５２９号公
報として提案された。前記ホウ素拡散用塗布液を使用す
ることでホウ素を高濃度で拡散できるとともに、拡散の
再現性、量産化を図ることができたが、形成した塗膜に
「ストリエーション」と呼ばれる数百Åの高低差を有す
る放射状の縞模様が現れ、ホウ素の均一な拡散が十分で
はなかった。そこで前記ストリエーションをなくすため
界面活性剤、例えばシリコーン系の界面活性剤を含有す
るホウ素拡散用塗布液が提案されたが、該塗布液で形成
した塗膜は、そこに存在する酸化ホウ素が空気中の水分
と反応してホウ酸を生成し、それが塗膜表面で結晶化
し、塗膜表面を荒れさせるといった欠点があった。2. Description of the Related Art Silicon semiconductor devices having boron-diffused P-type regions are used for manufacturing transistors, diodes, ICs and the like. As a method of diffusing boron in the silicon semiconductor device, a thermal decomposition method or a counter NB is used.
The method, the dopant host method, the coating method and the like have been investigated, but the coating method is particularly preferably used because it can be uniformly diffused without requiring an expensive apparatus and is excellent in mass productivity. Above all, it is preferable to apply a coating liquid containing boron using a spin coater or the like. However, in the conventional coating liquid, the boron compound contained therein is liable to be clouded, the resistance value of the device after diffusion is varied, and the formed junction is disturbed, so that high concentration diffusion is difficult. Therefore, a method of diffusing boron with high reproducibility at a high concentration using a coating liquid for boron diffusion containing a reaction product of a boron compound and a polyhydric alcohol has been proposed by the applicant as Japanese Patent Publication No. 62-27529. It was By using the above boron diffusion coating solution, it was possible to diffuse boron at a high concentration, and it was possible to achieve reproducibility of diffusion and mass production, but the formed coating film could have several hundred liters called “striation”. Radial stripes having height differences appeared, and the uniform diffusion of boron was not sufficient. Therefore, in order to eliminate the striation, a coating liquid for diffusing boron containing a surfactant, for example, a silicone-based surfactant has been proposed.However, the coating film formed by the coating liquid has boron oxide present in the air. There is a defect that boric acid is generated by reacting with the water contained therein, which is crystallized on the surface of the coating film to roughen the coating surface.
【０００３】[0003]
【発明が解決しようとする課題】上記欠点を解決するた
め本発明者等は鋭意研究した結果、ホウ素拡散用塗布液
にアルコール性水酸基含有高分子化合物及び多価アルコ
ールとともにフッ素系界面活性剤を含有させることで、
ストリエーションがなく高濃度のホウ素が均一に、しか
も再現性良く拡散できることを見出し、本発明を完成し
たものである。すなわち、DISCLOSURE OF THE INVENTION As a result of diligent researches by the present inventors in order to solve the above-mentioned drawbacks, as a result, a coating liquid for diffusing boron contains a fluorine-based surfactant together with an alcoholic hydroxyl group-containing polymer compound and a polyhydric alcohol. By letting
The inventors have completed the present invention by finding that there is no striation and that a high concentration of boron can be diffused uniformly and with good reproducibility. That is,
【０００４】本発明は、ホウ素が高濃度で、均一にしか
も再現性よく拡散できるとともにストリエーションがな
く、ホウ酸の析出による表面荒れの少ないホウ素拡散用
塗布液を提供することを目的とする。An object of the present invention is to provide a coating solution for boron diffusion, which has a high concentration of boron and can be uniformly and reproducibly diffused, has no striation, and has less surface roughness due to precipitation of boric acid.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成する本発
明は、（ａ）ホウ素化合物、（ｂ）アルコール性水酸基
含有高分子化合物、（ｃ）多価アルコール、及び（ｄ）
フッ素系界面活性剤を又は、（ａ）ホウ素化合物と
（ｂ）アルコール性水酸基含有高分子化合物及び（ｃ）
多価アルコールとの反応生成物、並びに（ｄ）フッ素系
界面活性剤を含有することを特徴とするホウ素拡散用塗
布液に係る。Means for Solving the Problems The present invention which achieves the above-mentioned object is (a) a boron compound, (b) an alcoholic hydroxyl group-containing polymer, (c) a polyhydric alcohol, and (d)
Fluorine-based surfactant or (a) boron compound and (b) alcoholic hydroxyl group-containing polymer compound and (c)
The present invention relates to a boron-diffusion coating solution containing a reaction product with a polyhydric alcohol and (d) a fluorine-based surfactant.
【０００６】上記（ａ）成分としては、ホウ酸、無水ホ
ウ酸、アルキル基がメチル、エチル、プロピル、ブチル
等であるアルキルホウ酸エステル及び塩化ホウ素が挙げ
られ、それらの単独又は２種以上の混合物が使用でき
る。（ａ）成分の配合割合は、本発明の塗布液の固形分
中２０〜５０重量％、好ましくは、３０〜４０重量％と
なるように配合すればよい。Examples of the component (a) include boric acid, boric anhydride, alkyl borate esters having an alkyl group such as methyl, ethyl, propyl and butyl, and boron chloride, either alone or as a mixture of two or more thereof. Can be used. The blending ratio of the component (a) may be 20 to 50% by weight, preferably 30 to 40% by weight, based on the solid content of the coating liquid of the present invention.
【０００７】（ｂ）成分としては、ポリエチレンオキシ
ド、ポリヒドロキシメチルアクリレート、ポリヒドロキ
シエチルアクリレート、ポリヒドロキシプロピルアクリ
レート又はこれに相当するメタクリレートなどのポリヒ
ドロキシアルキルアクリレート又はメタクリレート類、
ポリビニルアルコール、ポリビニルアセタール、ポリビ
ニルブチラール等を挙げることができ、それらの単独又
は２種以上の混合物が使用できる。中でもホウ素化合物
との錯体の形成性及び形成した錯体の安定性からポリビ
ニルアルコールが好ましい。（ｂ）成分の配合割合は、
本発明の塗布液の固形分中５〜７０重量％、好ましく
は、５〜６０重量％となるように配合すればよい。As the component (b), polyethylene oxide, polyhydroxymethyl acrylate, polyhydroxyethyl acrylate, polyhydroxypropyl acrylate or a polyhydroxyalkyl acrylate or methacrylate such as methacrylate corresponding thereto,
Examples thereof include polyvinyl alcohol, polyvinyl acetal, and polyvinyl butyral, and these can be used alone or as a mixture of two or more kinds. Among them, polyvinyl alcohol is preferable from the viewpoint of forming a complex with a boron compound and stability of the formed complex. The mixing ratio of the component (b) is
It may be added in an amount of 5 to 70% by weight, preferably 5 to 60% by weight, based on the solid content of the coating liquid of the present invention.
【０００８】さらに、（ｃ）成分としては、ＨＯ（Ｃ2
Ｈ4Ｏ）nＨ（ｎは１４以下）の低分子化合物、糖アルコ
ールが挙げられる。中でもマンニトールが好ましい。前
記マンニトールを含有することでホウ素化合物が安定な
錯体を形成し、ホウ素拡散用塗布液中のホウ素化合物の
濃度を高めることができる。前記マンニトールと（ｂ）
成分及び（ｃ）成分を併用すると高濃度のホウ素を半導
体デバイスに拡散することができる。（ｃ）成分の配合
割合は、本発明の塗布液の固形分中５〜７０重量％、好
ましくは、１０〜６５重量％となるように配合すればよ
い。Further, as the component (c), HO (C 2
H 4 O) n H (n is 14 or less) low molecular weight compounds and sugar alcohols. Of these, mannitol is preferred. By containing the mannitol, the boron compound forms a stable complex, and the concentration of the boron compound in the boron diffusion coating liquid can be increased. Mannitol and (b)
By using the component and the component (c) together, a high concentration of boron can be diffused into the semiconductor device. The content of the component (c) may be 5 to 70% by weight, preferably 10 to 65% by weight, based on the solid content of the coating liquid of the present invention.
【０００９】上記（ａ）〜（ｃ）成分は予め室温で、或
は加温下で混合して反応させて得た反応生成物としても
使用できる。前記反応生成物は（ａ）成分と（ｂ）又は
（ｃ）成分との錯体と考えられる。The above-mentioned components (a) to (c) can also be used as a reaction product obtained by previously reacting by mixing at room temperature or under heating. The reaction product is considered to be a complex of the component (a) and the component (b) or the component (c).
【００１０】上記に加えて，本発明のホウ素拡散用塗布
液は、フッ素系界面活性剤を含有する。前記フッ素系界
面活性剤を含有することでホウ素化合物の錯体が空気中
の水分に影響されることがなく、表面荒れが起こらな
い。フッ素系界面活性剤としては、具体的に一般式In addition to the above, the boron diffusion coating liquid of the present invention contains a fluorine-containing surfactant. By containing the fluorine-based surfactant, the boron compound complex is not affected by moisture in the air, and surface roughness does not occur. Specific examples of the fluorine-based surfactant include the general formula
【００１１】[0011]
【化１】
（Ｒfは、アルキル基の水素原子の一部又は全部がフッ
素原子で置換された炭素数６〜１０のフッ化アルキル
基、Ｒ1は水素原子又は炭素数１〜５のアルキル基、ｎ
は１〜２０の整数である。）で表わされるフッ素系界面
活性剤が挙げられる。前記フッ素系界面活性剤としては
市販品を用いることができ、該市販品としては次の化２
〜５のＥＦＴＯＰ（トーケムプロダクツ社製）が挙げら
れる。[Chemical 1] (R f is a fluorinated alkyl group having 6 to 10 carbon atoms in which some or all of the hydrogen atoms of the alkyl group are substituted with fluorine atoms, R 1 is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, n
Is an integer of 1 to 20. ) Fluorine-based surfactants represented by As the fluorine-based surfactant, a commercially available product can be used.
5 to 5 EFTOP (manufactured by Tochem Products).
【００１２】[0012]
【化２】 [Chemical 2]
【００１３】[0013]
【化３】 [Chemical 3]
【００１４】[0014]
【化４】 [Chemical 4]
【００１５】[0015]
【化５】 [Chemical 5]
【００１６】上記フッ素系界面活性剤は、ホウ素拡散用
塗布液に対し２０〜１０００ｐｐｍ、好ましくは５０〜
１００ｐｐｍの範囲で含有することができる。The above-mentioned fluorine-containing surfactant is 20 to 1000 ppm, preferably 50 to 1000 ppm with respect to the boron diffusion coating solution.
It can be contained in the range of 100 ppm.
【００１７】上記（ａ）〜（ｄ）の各成分は溶剤に溶解
して使用するのが好ましく、該溶剤としては、具体的に
メタノール、エタノール、プロパノール、ブタノール、
アミルアルコール、ベンジルアルコール、フルフリルア
ルコール、テトラヒドロフルフリルアルコール、エチレ
ングリコールモノメチルエーテル、エチレングリコール
モノエチルエーテル、エチレングリコールモノプロピル
エーテル、エチレングリコールモノブチルエーテル、ト
リエチレングリコールモノメチルエーテル、トリエチレ
ングリコールモノエチルエーテル、プロピレングリコー
ル、トリエチレングリコール、ジプロピレングリコー
ル、ブタンジオール、ペンタンジオール、グリセリン、
グリセリンモノブチレート等のアルコール系溶剤、及び
前記アルコール系溶剤と水との混合物が挙げられる。前
記溶剤は単独又は２種以上を混合して使用してもよい。
中でもアルコール系溶剤と水との混合物は（ａ）及び
（ｂ）成分を水溶液として溶解でき好ましい。The components (a) to (d) are preferably used by dissolving them in a solvent, and specific examples of the solvent include methanol, ethanol, propanol, butanol,
Amyl alcohol, benzyl alcohol, furfuryl alcohol, tetrahydrofurfuryl alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, Propylene glycol, triethylene glycol, dipropylene glycol, butanediol, pentanediol, glycerin,
Examples thereof include alcohol solvents such as glycerin monobutyrate, and a mixture of the alcohol solvent and water. You may use the said solvent individually or in mixture of 2 or more types.
Above all, a mixture of an alcohol solvent and water is preferable because the components (a) and (b) can be dissolved as an aqueous solution.
【００１８】さらに、必要に応じてアルコール可溶性金
属化合物を添加することができる。前記化合物として
は、具体的にはアルコキシシランの加水分解物を含む溶
液として東京応化工業社から市販されている「ＯＣＤ」
（商品名）、Ａｌ、Ｆｅ、Ｓｎ、Ｎｉ、Ａｕ、Ｐｔ、Ｚ
ｎ等の硝酸塩又は塩化物、、Ａｌ、Ｃｕ、Ｎｉ、Ｚｎ、
Ｉｎ等のアセチルアセトネート、リン酸、五酸化リン、
ヒ酸、ピロヒ酸又は亜ヒ酸等が挙げられる。Further, an alcohol-soluble metal compound can be added if necessary. As the compound, specifically, "OCD" commercially available from Tokyo Ohka Kogyo Co., Ltd. as a solution containing a hydrolyzate of alkoxysilane.
(Trade name), Al, Fe, Sn, Ni, Au, Pt, Z
Nitrate or chloride such as n, Al, Cu, Ni, Zn,
Acetylacetonates such as In, phosphoric acid, phosphorus pentoxide,
Examples thereof include arsenic acid, pyroarsenic acid, and arsenous acid.
【００１９】上記本発明のホウ素拡散用塗布液を用いた
ホウ素の拡散は、前記塗布液を半導体デバイスの表面に
スピンコーター法、スプレー法、デイッピング法又は刷
毛塗り法等で塗布し、それをを乾燥したのち５００〜６
００℃の温度で焼成し、有機成分を分解燃焼除去してＢ
2Ｏ3の無機質被膜を形成したのち、さらに温度を１００
０〜１３００℃に昇温して加熱することで実施される。
前記拡散法により、ホウ素が半導体デバイス中に高濃度
で均一に拡散浸透する。The diffusion of boron using the coating solution for boron diffusion of the present invention is carried out by applying the coating solution onto the surface of a semiconductor device by a spin coater method, a spray method, a dipping method or a brush coating method. After drying 500-6
B is burned at a temperature of 00 ° C to decompose and remove organic components to remove B
After forming the inorganic film of 2 O 3 , further increase the temperature to 100
It is carried out by raising the temperature to 0 to 1300 ° C. and heating.
By the diffusion method, boron is uniformly diffused and permeated into the semiconductor device at a high concentration.
【００２０】[0020]
【発明の実施の形態】次に本発明の実施例について述べ
るがこれによって本発明はなんら限定されるものではな
い。BEST MODE FOR CARRYING OUT THE INVENTION Next, examples of the present invention will be described, but the present invention is not limited thereto.
【００２１】[0021]
実施例１
ポリビニルアルコール（重合度３００） ６１ｇ
マンニトール ３８ｇ
三酸化二ホウ素（Ｂ2Ｏ3） ３１ｇ
フッ素系界面活性剤（ＥＦ−１２２Ａ） ０．０５ｇ
水 ２５２ｇ
エチレングリコールモノメチルエーテル ５８７ｇ
を９０℃で５時間攪拌しホウ素拡散用塗布液を調製し
た。Example 1 Polyvinyl alcohol (polymerization degree: 300) 61 g Mannitol 38 g Diboron trioxide (B 2 O 3 ) 31 g Fluorine-based surfactant (EF-122A) 0.05 g Water 252 g Ethylene glycol monomethyl ether 587 g at 90 ° C. for 5 hours. The coating liquid for boron diffusion was prepared by stirring.
【００２２】調製したホウ素拡散用塗布液を１０〜２０
Ω・ｃｍの比抵抗値を有するＮ型シリコンウエーハ上に
３０００ｒｐｍに回転させたスピナーコーターを用いて
３０秒間塗布し塗膜を形成した。該塗膜の表面を光学顕
微鏡で観察したところ、ホウ酸結晶の析出がみられず、
均一な塗膜であった。次いで酸素中６００℃で３０分間
焼成し、さらに、１２００℃に昇温して３０分間、６０
分間、９０分間、１２０分間窒素中でそれぞれホウ素の
拡散を行った。得られたシリコンウエーハのシート抵抗
値（Ω／□）を測定したところ、それぞれ２Ω／□、
１．４Ω／□、１．２Ω／□及び１Ω／□であり、ま
た、拡散深さ（μｍ）は、それぞれ５μｍ、６．７μ
ｍ、８．４μｍ及び９．７μｍであった。The prepared boron-diffusing coating solution is used in an amount of 10 to 20.
A spinner coater rotated at 3000 rpm was used for 30 seconds for coating on an N-type silicon wafer having a specific resistance value of Ω · cm to form a coating film. When the surface of the coating film was observed with an optical microscope, precipitation of boric acid crystals was not observed,
It was a uniform coating film. Then, it is baked in oxygen at 600 ° C. for 30 minutes, and further heated to 1200 ° C. for 30 minutes for 60 minutes.
Boron was diffused in nitrogen for 90 minutes, 90 minutes, and 120 minutes, respectively. When the sheet resistance value (Ω / □) of the obtained silicon wafer was measured, it was 2Ω / □,
1.4Ω / □, 1.2Ω / □ and 1Ω / □, and the diffusion depths (μm) are 5 μm and 6.7 μ, respectively.
m, 8.4 μm and 9.7 μm.
【００２３】比較例１
実施例１において、フッ素系界面活性剤を使用しない以
外、実施例１と同様にしてホウ素拡散用塗布液を調製し
た。得られたホウ素拡散用塗布液を実施例１と同じシリ
コンウエーハに３０００ｒｐｍで３０秒間塗布し塗膜を
形成したところ、ストリエーションの発生があった。Comparative Example 1 A boron diffusion coating solution was prepared in the same manner as in Example 1 except that the fluorine-containing surfactant was not used. When the obtained boron-diffusing coating liquid was applied to the same silicon wafer as in Example 1 at 3000 rpm for 30 seconds to form a coating film, striation occurred.
【００２４】比較例２
実施例１において、フッ素系界面活性剤をシリコーン系
界面活性剤であるＳＨ３０ＰＡ（東レ・シリコーン社
製）０．０５ｇを加えた以外は、実施例１と同様にして
ホウ素拡散用塗布液を調製した。得られたホウ素拡散用
塗布液を実施例１と同じシリコンウエーハに３０００ｒ
ｐｍで３０秒間塗布し塗膜を形成した。前記塗膜の表面
を光学顕微鏡で観察したところ、ホウ酸結晶が観察さ
れ、しかも塗膜表面が荒れていた。Comparative Example 2 Boron diffusion was carried out in the same manner as in Example 1 except that 0.05 g of SH30PA (manufactured by Toray Silicone Co., Ltd.), which is a silicone type surfactant, was added to the fluorine type surfactant. To prepare a coating solution. The obtained boron diffusion coating solution was applied to the same silicon wafer as in Example 1 at 3000r.
It was applied for 30 seconds at pm to form a coating film. When the surface of the coating film was observed with an optical microscope, boric acid crystals were observed and the surface of the coating film was rough.
【００２５】[0025]
【発明の効果】本発明のホウ素拡散用塗布液は、ストリ
エーションの発生や塗膜表面荒れがなく均一にホウ素を
高濃度で半導体デバイス表面に拡散でき、しかもその拡
散は再現性が高い。このホウ素拡散用塗布液を使用する
ことにより、高い量産性をもって半導体デバイスを製造
できる。The boron-diffusing coating solution of the present invention is capable of uniformly diffusing boron at a high concentration on the surface of a semiconductor device without occurrence of striation and surface roughness of the coating film, and the diffusion is highly reproducible. By using this boron diffusion coating liquid, semiconductor devices can be manufactured with high mass productivity.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中山 寿昌 神奈川県川崎市中原区中丸子150番地 東京応化工業株式会社内 (56)参考文献 特開 昭57−73931（ＪＰ，Ａ) 特開 昭56−122125（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 31/00 H01L 21/225 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Hisasamu Nakayama 150 Nakamaruko, Nakahara-ku, Kawasaki-shi, Kanagawa Tokyo Ohka Kogyo Co., Ltd. (56) Reference JP-A-57-73931 (JP, A) JP-A-56 -122125 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C30B 31/00 H01L 21/225
Claims (6)
水酸基含有高分子化合物、（ｃ）多価アルコール、及び
（ｄ）フッ素系界面活性剤を含有することを特徴とする
ホウ素拡散用塗布液。1. A boron diffusion coating comprising (a) a boron compound, (b) an alcoholic hydroxyl group-containing polymer compound, (c) a polyhydric alcohol, and (d) a fluorosurfactant. liquid.
水酸基含有高分子化合物及び（ｃ）多価アルコールとの
反応生成物、並びに（ｄ）フッ素系界面活性剤を含有す
ることを特徴とするホウ素拡散用塗布液。2. A reaction product of (a) a boron compound, (b) an alcoholic hydroxyl group-containing polymer compound and (c) a polyhydric alcohol, and (d) a fluorosurfactant. A coating liquid for boron diffusion.
キルホウ酸エステル及び塩化ホウ素から選ばれる少なく
とも１種であることを特徴とする請求項１又は２記載の
ホウ素拡散用塗布液。3. The boron-diffusion coating liquid according to claim 1, wherein the component (a) is at least one selected from boric acid, boric anhydride, alkyl borate esters and boron chloride.
ことを特徴とする請求項１又は２記載のホウ素拡散用塗
布液。4. The coating solution for boron diffusion according to claim 1, wherein the component (b) is polyvinyl alcohol.
徴とする請求項１又は２記載のホウ素拡散用塗布液。5. The coating liquid for boron diffusion according to claim 1, wherein the component (c) is a sugar alcohol.
特徴とする請求項５記載のホウ素拡散用塗布液。6. The coating liquid for diffusing boron according to claim 5, wherein the sugar alcohol is mannitol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35072895A JP3522940B2 (en) | 1995-12-26 | 1995-12-26 | Boron diffusion coating solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35072895A JP3522940B2 (en) | 1995-12-26 | 1995-12-26 | Boron diffusion coating solution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09181009A JPH09181009A (en) | 1997-07-11 |
| JP3522940B2 true JP3522940B2 (en) | 2004-04-26 |
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ID=18412454
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|---|---|---|---|
| JP35072895A Expired - Fee Related JP3522940B2 (en) | 1995-12-26 | 1995-12-26 | Boron diffusion coating solution |
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| JP (1) | JP3522940B2 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3922337B2 (en) * | 2000-08-28 | 2007-05-30 | サンケン電気株式会社 | Liquid impurity source material and semiconductor device manufacturing method using the same |
| DE102005025933B3 (en) * | 2005-06-06 | 2006-07-13 | Centrotherm Photovoltaics Gmbh + Co. Kg | Doping mixture for preparing and doping semiconductor surfaces, comprises a p- or n-dopant, for doping the semiconductor surfaces, water and mixture of two or more surfactants, where one of the surfactant is a non-ionic surfactant |
| JP2010056465A (en) * | 2008-08-29 | 2010-03-11 | Shin-Etsu Chemical Co Ltd | Boron paste for diffusion, and method of manufacturing solar cell using the same |
| JP2010161317A (en) * | 2009-01-09 | 2010-07-22 | Tokyo Ohka Kogyo Co Ltd | Diffusing agent composition, method for forming impurity diffusion layer, and solar cell |
| JP5679545B2 (en) * | 2010-05-17 | 2015-03-04 | 東京応化工業株式会社 | Diffusion agent composition, impurity diffusion layer forming method, and solar cell |
| KR20140011354A (en) * | 2011-05-20 | 2014-01-28 | 닛폰고세이가가쿠고교 가부시키가이샤 | Coating liquid for diffusing impurity |
| JP6022243B2 (en) * | 2011-09-12 | 2016-11-09 | 東京応化工業株式会社 | Diffusion agent composition and method for forming impurity diffusion layer |
| JP2013093563A (en) * | 2011-10-04 | 2013-05-16 | Shin Etsu Chem Co Ltd | Coating agent for boron diffusion |
| JP6178543B2 (en) * | 2012-01-25 | 2017-08-09 | 直江津電子工業株式会社 | P-type diffusion layer coating solution |
| JP6009245B2 (en) * | 2012-07-02 | 2016-10-19 | 直江津電子工業株式会社 | P-type diffusion layer coating solution |
| JP2014045065A (en) * | 2012-08-27 | 2014-03-13 | Dainippon Screen Mfg Co Ltd | Substrate processing method and substrate processing apparatus |
| JP2019033147A (en) * | 2017-08-07 | 2019-02-28 | 東京応化工業株式会社 | Impurity diffusing agent composition and forming method of impurity diffusing layer |
| CN108257857A (en) * | 2018-01-11 | 2018-07-06 | 华东理工大学 | A kind of polyalcohol boronate complex boron diffusion source and preparation method thereof |
| CN114121624A (en) * | 2021-11-23 | 2022-03-01 | 浙江尚能实业股份有限公司 | Composite boron diffusion source and preparation method thereof and semiconductor doping processing method |
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1995
- 1995-12-26 JP JP35072895A patent/JP3522940B2/en not_active Expired - Fee Related
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|---|---|
| JPH09181009A (en) | 1997-07-11 |
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