JP3525695B2 - Plasma CVD method, plasma CVD apparatus and electrode - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an article to be film-formed in which irregularities are exposed when installed on an electrode for setting an article to be film-formed, and an article to be film-formed having a height when installed on the electrode (particularly The present invention relates to a plasma CVD method suitable for forming a film on the upper surface), a plasma CVD apparatus, and an electrode for setting a film-forming article.

[0002]

2. Description of the Related Art As a typical example of conventional film formation by plasma CVD, film formation by a parallel plate type plasma CVD apparatus shown in FIGS. 6A and 6B can be exemplified. This apparatus has a vacuum container 1 used as a film forming chamber, and an electrode 2 also serving as an article holder for setting an article to be film-formed therein and an electrode 3 facing the electrode 2 are provided therein.

The electrode 2 is a power application electrode for applying power to the film forming material gas introduced between the electrode 2 and the electrode 3 to generate plasma, and in the example shown in the figure, a high frequency power source 22 via a matching box 21. Are connected. In addition, a heater 23 for heating the film-forming target placed thereon to a film-forming temperature is additionally provided. The electrode 3 is a ground electrode. Further, an exhaust device 11 is connected to the vacuum container 1, and a gas supply unit 4 for the film forming raw material gas is connected. Gas sources 431, 432, ... Which supply one or more film-forming source gases to the gas supply unit 4 via mass flow controllers 411, 412 ... And valves 421, 422.
・ Is included.

According to this parallel plate type plasma CVD apparatus, the article to be film-formed is carried into the vacuum vessel 1 by the article conveying apparatus (not shown) and placed on the electrode 2, and the inside of the vessel 1 is used for the operation of the exhaust device 11. And a predetermined degree of vacuum,
A film forming raw material gas is introduced from the gas supply unit 4. Further, high-frequency power is supplied from the high-frequency power source 22 to the electrode 2 via the matching box 21, the gas introduced by the high-frequency power is converted into plasma, and a film is formed on the surface of the article to be film-formed under this plasma.

[0005]

However, for example, as shown in FIG. 6A, in order to form a film on the upper surface S4 'of the umbrella portion of the film-formed article S4 made of an umbrella-shaped electrically insulating material, the article is formed. When S4 is erected on the electrode 2, the side surface irregularities of the article are exposed, and the generated plasma also circulates in the recesses under the umbrella portion, making it difficult for the plasma density in the vicinity of the article upper surface S4 ′ to be uniform, and thus the article upper surface. The film quality and the uniformity of film thickness of the film formed in S4 'are impaired.

When a film is to be formed only on the upper surface S4 'of the article S4, the film is formed in a state where the other portion is covered with, for example, a vacuum electrical insulating tape, but this shielding tape is expensive. Therefore, the cost is increased accordingly. Also,
For example, as shown in FIG. 6 (B), when the article S5 made of a high electric insulating material is erected on the electrode 2 to form a film on the upper surface S5 ', the plasma sheath s is formed.
Since h is formed in the region along the surface of the electrode 2, the article upper surface S5 'comes out from the plasma sheath sh, and it is difficult to stably form a film on the upper surface that has come out of the sheath sh. Or, no film is formed.

Therefore, the present invention is a plasma CVD method in which a film-forming raw material gas is turned into plasma by supplying electric power, and a film is formed under the plasma on an object to be film-formed which is placed on an electrode used for the gas plasma conversion. If the article installation surface of the film-forming article installation electrode is a conventional flat surface, even if the film-deposited article has an uneven portion exposed or becomes taller when it is installed thereon, An object is to provide a plasma CVD method capable of forming a film uniformly on a desired film formation surface such as an upper surface.

Further, the present invention is the plasma CVD method, wherein even when a film is formed on a part of a film-formed article, an expensive shielding member (for example, an electrically insulating tape for vacuum) is not required. Plasma CVD that can form a film only on a part
The challenge is to provide the law. Further, the present invention is a plasma CV capable of implementing such a plasma CVD method easily and inexpensively.
An object of the present invention is to provide a D device and an electrode for installing an article to be deposited.

[0009]

In order to solve the above-mentioned problems, the present invention converts a film-forming raw material gas into a plasma by supplying electric power , and deposits a film-forming article placed on a film-forming article setting electrode.
A plasma CVD method for forming a film on a film surface under the plasma, wherein the article is fitted as the film-forming article-installed electrode , and the electrode is plasmoned while the article is fitted.
There is a gap between the uppermost surface exposed to
A thin film is formed on a surface of a film to be formed, which is exposed to the plasma of the article in a state where the article to be film-formed is fitted into the recess. To provide a plasma CVD method (first plasma CV
Method D).

In order to solve the above-mentioned problems, the present invention provides a film forming material gas supplied from a film forming material gas supply means, which is turned into plasma by applying electric power, and is formed on a film forming article setting electrode. A plasma CVD apparatus for forming a film on a film-forming surface of an article under the plasma, wherein the film-forming article installation electrode inserts the article and inserts the article.
Top surface of the electrode exposed to the plasma and the article
It is inserted so that there is almost no gap between the film formation surface and
CV characterized by having a concave portion for
A D device is provided (first plasma CVD device).

In order to solve the above-mentioned problems, the present invention is an electrode for installing an article to be film-formed, which is used for carrying out the plasma CVD method, wherein the article is fitted and the article is attached.
The uppermost surface of the electrode that is exposed to the plasma when fitted
Insert so that there is almost no gap between the article and the film-forming surface
There is provided an electrode characterized by being provided with a recessed portion (first electrode).

At this time, the article to be film-formed is left with the surface to be film-formed , and the uppermost surface of the electrode exposed to the plasma and the article.
No film is formed on the article by fitting into the electrode recess in a state in which a gap is not substantially formed between the film-forming surface and the recess or the like around which plasma wraps around if exposed. As a result, it is possible to shield from plasma as a way to fill the electrode portion around the entrance of the electrode recess, so that the plasma density in the vicinity of the film-forming surface can be made uniform, and a uniform film can be easily and inexpensively formed on the film-forming surface. In addition, it is possible to easily and inexpensively prevent the formation of a film on a portion where no film is formed.

Also, when a film is to be formed on the upper surface or the upper part of a tall film-forming article, the article is fitted into an electrode recess formed at an appropriate depth to allow the uppermost surface of the electrode to reach the upper surface of the article. Or lower the height to the top,
Alternatively, the upper surface of the article can be prevented from protruding outside the plasma sheath in the same plane as the uppermost surface of the electrode, and a uniform film can be easily and inexpensively formed on the surface to be formed and a film is formed on a portion where no film is formed. Can be easily and cheaply prevented.

As the concave portion of the electrode for installing the film-forming article,
As already mentioned, it is possible to adopt one that can insert the article such that the uppermost surface of the electrode exposed to the plasma and the film formation surface of the film formation article are located on the same plane. As a result, the plasma density in the vicinity of the film formation surface can be made uniform, and a uniform film can be formed. Further, in this case, the article is set such that the concave portion of the film-forming article-installed electrode is placed so that the uppermost surface of the electrode exposed to the plasma and the film-forming surface of the film-forming article are on the same plane. In addition, in the fitted state of the electrode and the article, a new concave portion is not formed between the electrode and the article in a plane including the uppermost surface of the electrode and the film formation surface of the article. A film may be formed on the film formation surface. This is convenient when it is desired to form a film only on the film formation surface.

Further, as the electrode for depositing a film-forming article, an electrode which is composed of a plurality of electrode members and which forms an electrode concave portion into which the film-forming article can be fitted in a state where the plurality of electrode members are combined is used. An article to be film-formed may be installed and a film may be formed on the surface of the article to be film-formed. Depending on the form of the film-forming target, it may not be possible to form a recess into which the desired portion of the product is fitted by forming a recess from the uppermost surface of the electrode. At this time, an electrode composed of a plurality of electrode members may be employed. While assembling the plurality of electrode members, a predetermined portion of the film-forming article can be fitted and arranged in the electrode recess.

Further, the film-forming article-installed electrode comprises a plurality of electrode members, and forms an electrode recess into which the film-forming article can be fitted in a state in which the plurality of electrode members are combined. A main electrode member and one or more auxiliary electrode members are provided as electrode members, and the main electrode member is a main recess into which the film-forming article can be fitted, and is exposed to the plasma of the main electrode member. The auxiliary electrode member has a main recess into which the article can be fitted such that the uppermost surface and the film formation surface of the article are located in the same plane, and the auxiliary electrode member is in a fitted state of the main electrode member and the article. It is also possible to adopt a material that can fill a new concave portion formed between them.

In any case, for a film-forming article having a non-film-forming recess (a recess not forming a film) in the film-forming surface,
The non-film-forming recess may be filled with a pad to form a film on the film-forming surface. The filling may act as an auxiliary electrode member or may be a simple filling that does not adversely affect the film formation. Further, in order to solve the above-mentioned problems, the present invention provides a plasma CVD in which a film-forming raw material gas is turned into plasma by supplying electric power and a film is formed on the film-forming article installed on the film-forming article installation electrode under the plasma. A method in which the electrode for depositing a film-forming article has a portion capable of filling the concave portion of a film-forming article having a concave portion, and the electrode is used to fill the concave portion of the film-forming article. A plasma CVD method is provided in which a film is formed on the surface of the article that is exposed to plasma (second plasma CVD method).

In order to solve the above-mentioned problems, the present invention provides a film formation source gas supplied from a film formation source gas supply means, which is turned into plasma by applying electric power, and is formed on a film formation article installation electrode. A plasma CVD apparatus for forming a film on an article under the plasma, wherein the film-forming article installation electrode has a portion capable of filling the recess of the film-forming article having the recess. A characteristic plasma CVD apparatus is provided (second plasma CVD apparatus).

In order to solve the above-mentioned problems, the present invention is an electrode for depositing a film-forming article, which is used for carrying out the second plasma CVD method, wherein the depression of a film-forming article having a concave portion is filled. An electrode is provided having a portion that can be formed (second electrode). According to the second plasma CVD method, plasma CVD apparatus and electrode of the present invention,
The article to be deposited is placed on the electrode, and the recess of the article is filled with the portion of the electrode. At this time, the plasma is prevented from flowing into the concave portion of the film-forming target, the plasma density in the vicinity of the film-forming surface can be made uniform, and a uniform film can be easily and inexpensively formed on the film-forming surface. Further, when the concave portion of the article is present on the film formation surface, it is possible to easily and inexpensively prevent the film formation on the surface where the film is not formed.

The film-forming article-installed electrode may be formed by integrally forming a protruding portion capable of filling a recess of the film-forming article and an electrode body. Alternatively, a protrusion capable of filling the recess of the article and an electrode body for installing the article may be separately provided. At this time, the protrusion may be an auxiliary electrode member, but the same effect can be obtained by using an electrically insulating member having a similar shape.

In any case, the first and second aspects of the present invention
As a typical example of the plasma CVD method of (1), a method of forming a film on an article to be film-formed using a capacitively coupled plasma CVD apparatus can be mentioned. In this case, the first aspect of the present invention
And the second plasma CVD apparatus is a capacitively coupled plasma C
It becomes a VD device. When a capacitively coupled plasma CVD apparatus is used, an electrode facing the film-forming article installation electrode may be provided, and at least one of the electrodes may be provided so that its position can be adjusted so that the distance between the electrodes can be adjusted. Good.

In any case, the material of the formed film varies depending on the film-forming raw material gas. For example, a carbon film is formed using a gas containing a carbon compound gas as the film-forming raw material gas. be able to. Examples of the article to be film-formed include those which are entirely or at least on the surface to be film-formed from an electrically insulating material.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to FIGS. 1 and 2 (A),
Plasma CVD described with reference to FIGS. 3, 4 and 5.
The method is a plasma CVD method in which a film is formed on an article to be formed using a capacitively coupled plasma CVD apparatus, and the article to be formed is used as an electrode for placing the article to be formed, which is placed in a vacuum container for film formation. In the state where the film-forming article is fitted in the concave portion of the electrode, the concave portion that can be fitted is provided,
While maintaining a predetermined film forming vacuum degree in the vacuum container, introducing a film forming raw material gas into the vacuum container, and supplying gas plasma generation power between the film forming article installation electrode and its counter electrode. Plasma CVD for converting the gas into plasma and forming a film on the surface of the article exposed to the plasma under the plasma
Is the law.

A plasma CVD apparatus used for carrying out the plasma CVD method comprises a vacuum container, an electrode for mounting a film-forming article provided in the vacuum container, an electrode for the electrode, and an electrode for the vacuum container. Capacitive coupling provided with a film forming material gas supplying means for supplying a film material gas, a gas plasma forming power supplying means for supplying gas plasma forming power between the electrodes, and an exhausting means for exhausting gas from the vacuum container. A plasma-enhanced plasma CVD apparatus in which an electrode on which a film-forming article is placed is provided with a recess into which the article can be fitted.

Further, the plasma CVD method described with reference to FIG. 2B is a plasma CVD method for forming a film on a film-forming article by using a capacitively coupled plasma CVD apparatus,
As the electrode for depositing a film-forming article to be placed in a vacuum container for film formation, an electrode having a projection capable of filling the recess of a film-forming article having a recess is used, and Between the electrode on which the film-forming article is placed and its counter electrode, the film-forming raw material gas is introduced into the vacuum container while the interior of the vacuum container is maintained at a predetermined film-forming vacuum degree while being filled with the protruding portion of the electrode. Is a plasma CVD method in which electric power for gas plasma conversion is supplied to generate a gas into plasma, and a film is formed on the surface of the article exposed to the plasma under the plasma.

The plasma CVD apparatus used for carrying out the plasma CVD method comprises a vacuum container, an electrode for mounting a film-forming article provided in the vacuum container, an electrode for the electrode, and an electrode for the vacuum container. Capacitive coupling provided with a film forming material gas supplying means for supplying a film material gas, a gas plasma forming power supplying means for supplying gas plasma forming power between the electrodes, and an exhausting means for exhausting gas from the vacuum container. A plasma CVD apparatus in which the electrode on which the film-forming article is placed has a protrusion capable of filling the recess of the film-forming article having the recess.

The plasma CVD apparatus shown in FIGS. 1 to 5 has the same structure as the plasma CVD apparatus shown in FIG. That is,
Each of the plasma CVD apparatuses shown in FIGS. 1 to 5 has a vacuum container 1 used as a film forming chamber, in which an electrode (electrode E1 in the example of FIG. 1) on which an object to be film-formed is set and Opposing electrodes 3 are provided.

The deposition target article installation electrode is a power application electrode for applying power to the raw material gas for film formation introduced between the electrode and the electrode 3 to turn it into a plasma, and a high frequency power source 22 via a matching box 21. Are connected. In addition, a heater 23 for heating the film-forming target placed thereon to a film-forming temperature is additionally provided. The electrode 3 is a ground electrode. It is desirable that at least one of the deposition target article-installed electrode and the electrode 3 facing the deposition target-positionable electrode is positionally adjustable so that the distance between them can be adjusted. Here, each of them can be vertically moved. .

Further, an exhaust device 11 is connected to the vacuum container 1, and a gas supply unit 4 for the film forming raw material gas is connected. The gas supply unit 4 includes gas sources 431, 432 ... Connected via mass flow controllers 411, 412 ... And valves 421, 422. included. In the plasma CVD apparatus shown in FIG. 1 (A), the film-forming article installation electrode E1
Has a recess D1 into which a columnar film-forming target S1 can be fitted. The article S1 is an article for which a film is to be formed only on the upper surface S1 '.

To further explain, the electrode E1 has a short cylindrical outer shape, and the uppermost surface E1 'exposed to plasma is provided with a cylindrical recess D1 having the same shape as the cylindrical film-forming target S1. . Then, the film-forming target S1 can be fitted into the recess D1 with substantially no space, and the film-forming target S1 ′ (upper surface) of the film-forming target S1 fitted in the recess D1 and the electrode E1 are exposed to the plasma. The upper surface E1 'is on the same plane, and
Between the top surface E1 'of the cage electrode and the film-forming surface S1' of the article
There is almost no gap, in other words, there is virtually no gap
It can be positioned such.

When a film is formed on the upper surface S1 'of the film-forming article S1 using this plasma CVD apparatus, the article S1 is exposed in the recess D1 of the electrode E1 so that the upper surface S1' is exposed to plasma. The film-forming raw material gas is turned into plasma in a state in which the electrode uppermost surface E1 'and the article upper surface (film-forming surface) S1' are fitted in the same plane. Others are the same as the film formation using the apparatus of FIG.

By using such an electrode E1,
It is not necessary to separately cover the side peripheral surface of the film formation target article S1 with an expensive shielding member, and a film can be uniformly formed only on the article upper surface S1 ′ easily and inexpensively. Further, for example, the film-forming target S1 is made of an electrically insulating material, or at least the film-forming surface S1 ′ is made of an electrically insulating material, and is large in the height direction. Since it was installed, the film-forming surface S
Even if 1'is coming out of the plasma sheath,
By adjusting the depth of the electrode recessed portion D1, the electrode uppermost surface E1 ′ and the film-forming surface S1 ′ can be located on the same surface, whereby the film-forming surface S1 ′ is arranged in the sheath. Thus, a stable and uniform film can be formed on the film formation surface.

When the film-forming surface is not only the upper surface S1 'of the article S1 but also the top of the peripheral side surface continuous thereto, as shown in FIG. The depth of D1 may be a depth at which the top of the side peripheral surface also projects upward from the electrode uppermost surface E1 ′ and a depth at which the upper surface and the top are projected in the plasma sheath. FIG. 1C shows another example of an electrode in which a recess is formed on the uppermost surface of the electrode. The outer shape of the electrode E2 is a short cylinder, and the uppermost surface E2 'of the electrode E2 exposed to the plasma is provided with a conical recess D2 having the same shape as the conical film-forming article S2.
Then, the film-forming target S2 can be fitted into the recess D2 without any gap, and the film-forming target S2 'of the film-forming target S2 fitted in the recess D2 (the bottom of the product and fitting into the recess). (A surface which is an upper surface when the electrode E2 is exposed) and the uppermost surface E2 ′ of the electrode E2 exposed to the plasma are on the same surface , and are shown in the figure.
Between the uppermost surface E2 'of the electrode and the film-forming surface S2' of the article.
There are no gaps, in other words, there are virtually no gaps
It can be urchin position.

FIG. 1 equipped with this film-forming article-installed electrode E2
The plasma CVD apparatus of the type shown in (A) and the film formation on the film formation surface S2 'of the film formation article S2 using this apparatus are the same as those in the apparatus of FIG. 1 (A). For example, if the conical article S2 is an article made of an electrically insulating material, or if the surface portion is made of an electrically insulating material, the cone top faces downward and the flat top surface of the electrode without such a recess is placed. If it is arranged, it is not only difficult, but a recess or space is formed between the electrode and the article S2, assuming that such arrangement can be made, and the generated plasma goes around to the recess or space and stays there. However, the plasma density around the article S2 becomes nonuniform, and the thickness and quality of the film formed on the film formation surface S2 ′ are likely to become nonuniform.

However, when the film-forming target S2 is fitted in the recess D2 of the electrode E2 shown in FIG. 1C, the film-forming surface S2 'is formed.
When the film is formed on the substrate, since the recess or space as described above is not formed in the fitted state of the electrode E2 and the article S2, the uniformity of the film can be improved. Further, it is not necessary to shield the side peripheral surface of the article S2 on which the film is not formed with another member, the film forming cost can be suppressed accordingly, and the film can be easily formed. Further, even when the article S2 is large in the height direction, a film can be stably formed on the film formation surface S2 '.

Next, FIG. 1D shows still another example of the electrode in which the recess is formed on the uppermost surface of the electrode. The outer shape of this electrode Ex is a short cylinder, and a cylindrical recess Dx is formed on the uppermost surface Ex ′ of the electrode Ex exposed to the plasma, and the cylindrical film-forming article Sx is just inserted therein. it can. Article insertion
In the state, as shown in the figure, the uppermost surface Ex ′ of the electrode and the covering of the article are covered.
There is almost no gap between the film formation surface Sx '. In other words, virtually
There is no gap. The article Sx has a ring-shaped groove Sg formed in two steps on its side peripheral surface, and is an article for which film formation is desired only on the upper surface Sx ′. FIG. 1 adopting this electrode Ex
According to the plasma CVD apparatus of the type shown in (A), the article Sx is fitted in the recess Dx of the electrode Ex, and the film formation surface (upper surface) Sx ′ is made to coincide with the electrode uppermost surface Ex ′, and in that state. A film is uniformly formed only on the surface Sx '.

Next, FIG. 2 (A) shows a plasma CVD apparatus provided with still another example of an electrode for forming a recess on the uppermost surface of the electrode. This plasma CVD apparatus has the same structure as the apparatus shown in FIG. The same parts as those in the apparatus of FIG. 1A are designated by the same reference numerals as in FIG.

The electrode E3 has a recess D3 into which the cylindrical or circular ring-shaped film-forming article S3 can be fitted. The article S3 is an article whose film is to be formed only on the upper surface S3 '. More specifically, the outer shape of the electrode E3 is a short cylinder, and a circular donut-shaped concave portion D3 having the same shape as the cylindrical or circular ring-shaped film-forming article S3 is formed on the uppermost surface E3 ′ exposed to the plasma. It is provided. Then, the film-forming target S3 is just fitted into the recess D3 with almost no space, and the film-forming target S3 '(upper surface) of the film-forming target S3 and the uppermost surface E3' of the electrode E3 exposed to the plasma are formed. On the same surface , and as shown in the figure, the uppermost electrode surface E3 'and the article are covered.
In other words, there is almost no gap between the film surface S3 'and the film surface S3'.
It can be positioned so that there is no quality gap .

When a film is formed on the upper surface S3 'of the film-formed article S3 by using this plasma CVD apparatus, the article S3 is exposed in the recess D3 of the electrode E3 so that the film-formed surface S3' is exposed to plasma. And so that the surface S3 'is at the same surface position as the electrode uppermost surface E3' , and the electrode uppermost surface E3
The film-forming raw material gas is turned into plasma in a state where the film-forming raw material gas is fitted into the article-forming surface S3 ′ so that there is substantially no gap therebetween . Others are the same as the film formation in the apparatus of FIG. 6 and FIG. A uniform film is formed on the deposition surface S3 '.

If the concave portion D3 of the electrode E3 on which the film-forming article is to be deposited is not a donut shape but is a columnar shape having a diameter substantially the same as the outer diameter of the cylindrical article S3, the electrode and the article are separated. In the fitted state, a non-film forming recess S that does not form a film corresponding to the inside of the cylinder or the inside of the ring in the film formation surface of the article S3
3 h will be present, and plasma will flow into the recess and stay there. Then, for example, when the film-forming target S3 is made of an electrically insulating material or at least the surface is made of an electrically insulating material, the film-forming surface (upper surface) of the article S3 is formed.
The thickness and quality of the film formed in S3 'are likely to be non-uniform.

However, when film formation is performed on the upper surface S3 'of the cylindrical film-forming target S3 fitted in the recess D3 of the electrode E3, the non-film forming recess S3h inside the target S3' is located in the center of the electrode. Since it is filled with almost no space by the columnar portion E31, the uniformity of the film becomes good. Further, in forming a film on the upper surface S3 'of the cylindrical article S3, it is not necessary to cover the outer peripheral portion and the non-film-forming recess S3h with a separately expensive shielding member, and the film-forming cost can be reduced accordingly and the film can be easily formed. . Also, when the article S3 is, for example, an article made of an electrically insulating material or at least the film-forming surface is an article made of an electrically insulating material and is large in the height direction, the depth of the recess D3 is appropriately selected. By arranging the articles in the same manner as shown in FIG. 2A, a film can be stably formed on the upper surface S3 '.

The electrode portion E31 that fills the non-film-forming recess S3h of the article S3 may be formed separately as an auxiliary electrode member and later fitted into the non-film-forming recess. Generally speaking, when there is a bottomed or penetrating non-film-forming recess in the film-forming surface of the film-forming target article, the non-film-forming recess may be used as an auxiliary electrode member or other material that does not interfere with film formation. Can be filled with padding.

FIG. 2 (B) shows a plasma CVD apparatus provided with still another example of the electrode on which the film-forming article is placed.
This plasma CVD apparatus has the same structure as the apparatus shown in FIG. The same parts as in the device of FIG.
The same reference numerals as in (A) are attached.

The electrode E30 is a main body E30 on which a cylindrical or circular ring-shaped film-forming article S3 is placed.
'And a protrusion E31' capable of filling the non-film-forming recess S3h of the article S3. The protruding portion E31 'is provided so as to project upward from the upper surface of the main body portion E30'. Article S3
Is an article for which a film is to be formed on the upper surface S3 ',
It is an article that does not interfere with the formation of a film on the outer peripheral surface.

Then, the film-forming target S3 is attached to the protrusion E31.
The film forming raw material gas is turned into plasma in a state where the film forming raw material gas is just fitted to the outer periphery of the ‘ Others are the same as the film formation in the apparatus of FIG. A uniform film is formed on the deposition surface S3 '. The cylindrical article S3 is formed on the main body E30 ′ having a flat surface without the protrusion E31 ′ of the electrode E30 for depositing a film-forming article.
In the state of being erected, assuming that the article S3 has a columnar shape having substantially the same diameter as the outer diameter of the article S3, the inside of the cylinder is inside the film-forming surface of the article S3 in the fitted state of the electrode and the article. Thus, there is a non-film-forming recess S3h corresponding to the inside of the ring where the film is not formed, and the plasma circulates in the recess and stays there. Then, for example, when the film-forming target S3 is made of an electrically insulating material or at least the surface is made of an electrically insulating material, the thickness and quality of the film formed on the film-forming surface (upper surface) S3 ′ of the article S3 are It tends to be uneven.

However, when a film is formed on the upper surface S3 'of the article S3 fitted onto the projecting portion E31' of the electrode E30, the non-film-forming recess S3h inside the article is the projecting portion E3.
Since it is filled with 1'without any gap, the uniformity of the film becomes good. Further, in forming a film on the upper surface S3 'of the cylindrical article S3, it is not necessary to cover the outer peripheral portion and the non-film-forming recess S3h with a separately expensive shielding member, and the film-forming cost can be reduced accordingly and the film can be easily formed. .

The electrode protrusion E31 'filling the non-film-forming recess S3h of the article S3 may be separately formed as an auxiliary electrode member and later fitted into the non-film-forming recess. FIG. 3 (A) shows a plasma CVD apparatus provided with still another example of an electrode for installing a film-forming article.

This plasma CVD apparatus has the same structure as the apparatus shown in FIG. 1A, except for the electrode E4 on which the film-forming article is placed. The same parts as those in the apparatus of FIG. 1A are designated by the same reference numerals as in FIG. The electrode E4 is an assembly type electrode and is effective for a film-forming article having a complicated shape.

An electrode E4 shown in FIG. 3A is composed of a plurality of electrode members E4U and E4L, and an umbrella-shaped film-forming target article S4 is an upper surface S4 'which is a film-forming surface in a state where these are combined.
This is an electrode that forms a recess D4 that can be inserted while leaving. The article S4 is an umbrella-shaped article in which a cylindrical portion S4L is integrally connected to the lower surface center of the truncated cone portion S4U,
It is an article for which film formation is desired only on the upper surface S4 'of the truncated cone portion S4U.

Explaining further, the electrode E4 comprises an upper electrode member E4U and a lower electrode member E4L. The upper electrode member E4U is an electrode member having the same thickness as the truncated cone portion S4U of the film formation target S4. The upper electrode member E4U has a through hole portion D4U having the same shape as the truncated cone portion S4U of the film formation target S4. The lower electrode member E4L is the article S4.
Has a cylindrical recess D4L having the same shape as the cylindrical portion S4L. Electrode member E4U having hole D4U and recess D4
An electrode E4 having a short cylindrical outer shape is formed in a state of being combined with an electrode member E4L having L, and an umbrella-shaped recess D4 having the same shape as the umbrella-shaped film-forming target S4 is formed therein.

In a state where the article S4 is arranged in the recess D4, the film-forming surface S4 '(upper surface of the truncated cone) of the article S4 and the uppermost surface E4' of the electrode E4 (upper electrode member E4U) exposed to the plasma. Is on the same surface, and as shown, the electrode top
There is almost no gap between the surface E4 'and the film-forming surface S4' of the article.
Thus, in other words, they are arranged so that there is substantially no gap . In forming a film on the upper surface S4 ′ of the truncated cone part S4U of the film-forming target S4 using this apparatus, after fitting the cylindrical part S4L of the film-forming target S4 into the recess D4L of the lower electrode member E4L, The upper electrode member E4U is fitted into the truncated cone part S4U of the film formation target S4. As a result, only the film formation surface S4 'of the article S4 is exposed to the plasma. In this state, the film-forming source gas is turned into plasma. Others are the same as the film formation in the apparatus of FIG. 6 and FIG. According to this apparatus, a uniform film can be formed easily and inexpensively only on the film-forming surface S4 ', as in the apparatus shown in FIGS. 1A and 2A.

Although the electrode composed of the plurality of electrode members is the electrode composed of the lower electrode member and the upper electrode member here, in addition to this, as shown in the cross section in FIG. It is also possible to use two electrode members that are provided and that can sandwich the film-forming article S4 from the left and right by these two electrode members. The electrode is not limited to the two electrode members, and may be composed of three or more electrode members.

The plural electrode members are the main electrode member and the one electrode member.
Alternatively, two or more auxiliary electrode members may be used. In this case, the main electrode member has a main recess in which the article can be fitted so that the uppermost surface of the electrode member exposed to the plasma and the film formation surface of the film formation article are flush with each other. It is a thing. The auxiliary electrode member has the same shape as a new concave portion formed when the film-forming article is fitted in the main concave portion of the main electrode member, or the auxiliary electrode member is not the same shape but is fitted in the new concave portion to form the main electrode member. The shape is such that no recess is formed on the uppermost surface of the member exposed to the plasma.
Then, the film formation is performed in a state where the auxiliary electrode is fitted in a new concave portion formed after fitting the film-forming target article into the main concave portion of the main electrode member.

A plasma CVD apparatus equipped with such an electrode is shown in FIG. This plasma CVD apparatus has the same structure as the apparatus shown in FIG. The same parts as those in the apparatus of FIG. 1A are designated by the same reference numerals as in FIG. The electrode E5 shown in FIG. 4 includes a plurality of electrode members E5M and E5S,
This is an electrode that forms a recess D5 into which the umbrella-shaped film-forming target S4 can be fitted in a state in which they are combined, leaving the upper surface S4 'that is the film-forming target. The article S4 has the same shape as the article shown in FIG. 3, and is an umbrella-shaped article in which a columnar portion S4L is integrally connected to the lower surface center of the truncated cone portion S4U, and is provided on the upper surface S4 ′ of the truncated cone portion S4U. It is an article for which only film formation is desired.

Explaining further, the electrode E5 is composed of a main electrode member E5M and an auxiliary electrode member E having the same height as the film-forming article S4.
It consists of 5S. The main electrode member E5M has a cylindrical recess D5M having the same diameter as the lower surface (the surface having the larger diameter) of the truncated cone portion S4U of the film formation target S4. Auxiliary electrode member E5
S is a ring-shaped member having a triangular cross section, which has the same shape as a new recess D5S generated when the film-forming target S4 is fitted into the recess D5M.

In forming a film on the upper surface S4 'of the truncated cone portion S4U of the film-forming target S4 using this apparatus,
After the film-forming article S4 is fitted into the recess D5M of the main electrode member E5M, the auxiliary electrode member E5 is inserted into the newly formed recess D5S.
Insert S. Thereby, the film formation surface S4 ′ of the film formation article S4, the main electrode member E5M, and the auxiliary electrode member E5S.
Surface E of the electrode E5 composed of
5'is on the same plane , and as shown, the electrode uppermost surface E5
′ And the film-forming surface S4 ′ of the article so that there is almost no gap
In other words, it is positioned so that there is substantially no gap .
Further, only the film formation surface S4 'of the article S4 is exposed to the plasma. In this state, the film forming source gas is turned into plasma. Others are the same as the film formation using the apparatus shown in FIG. 6 and FIG. According to this device, FIG. 1 (A) and FIG. 2 (A)
Similar to the apparatus shown in FIG. 3, a uniform film can be formed easily and inexpensively only on the film-forming surface S4 '.

[0057] deposition target article placement electrode, by always, without shall the deposition surface of the uppermost surface and the film-forming articles that are exposed to plasma of the electrode can be positioned on the same plane <br /> Yes. FIG. 5 shows an example thereof. FIG. 5 shows a plasma CVD apparatus provided with still another example of an electrode for installing a film-forming article. This plasma CVD apparatus has the same structure as the apparatus shown in FIG. The same parts as in the device of FIG.
The same reference numerals as in (A) are attached.

The electrode E6 shown in FIG. 5 has a short cylindrical outer shape,
The uppermost surface E6 ′ exposed to plasma has a cylindrical recess D6 having the same shape as the cylindrical portion S4L of the umbrella-shaped film-forming article S4 similar to the above. The diameter of the recess D6 is the same as that of the article S4.
The diameter may be larger than the diameter of the cylindrical portion S4L as long as it is equal to or smaller than the diameter of the lower surface of the truncated cone portion S4U. In this case, the article S4 is desired to be formed with a film on the upper surface S4 'of the truncated cone portion S4U, but the article S4 has no problem even if it is formed on an inclined surface following the surface.

Using the plasma CVD apparatus equipped with this electrode E6, the upper surface S4 of the truncated cone portion S4U of the film-forming article S4 is formed.
In forming the film on the ′ ′, the columnar portion S4L of the film-forming article S4 is fitted into the recess D6, and the electrode
The top surface E6 ', the top surface S4' of the article S4 and the truncated cone portion S
A state in which there is no substantial gap between the film-forming surface including the side surface of 4U
In this state, in other words, in the state where there is substantially no gap, the article S
The truncated cone portion S4U of No. 4 is arranged in the plasma sheath, and a film is formed under the plasma. At this time, the side peripheral surface concave portion below the truncated cone portion S4U in the article is preferably filled with the peripheral portion of the entrance of the electrode concave portion D6. In this state, a film is formed under plasma. Others are the same as the film formation using the apparatus shown in FIG. 6 and FIG.

Thus, for example, even when the film-forming article S4 is made of an electrically insulating material or at least the surface is made of an electrically insulating material, the upper surface S4 'of the truncated cone portion can be uniformly formed at a low cost. Film can be formed. In addition,
Films of various materials can be formed by using various kinds of film forming material gases. For example, as film forming material gases, methane (CH ₄ ) and ethane (C ₂ ) which are generally used for forming a carbon film are used.
H _6), propane (C ₃ H _8), butane (C ₄ H _10),
Carbon compound gas such as acetylene (C ₂ H ₂ ), benzene (C ₆ H ₆ ), carbon tetrafluoride (CF ₄ ), carbon difluoride 6 (C ₂ F ₆ ), or, if necessary, these Using a mixture of the above carbon compound gas with hydrogen gas as a carrier gas, an inert gas, etc., and the film forming pressure is several 100 mT.
If it is set to about orr, a diamond-like carbon (DLC) film is formed on the film formation surface of the film formation article.

The DLC film has good lubricity, water repellency, releasability and the like. In addition, scratches are less likely to occur, and by adjusting the thickness thereof, it is possible to prevent the flexibility of the article coated with the film from being impaired even when the article to be film-formed requires flexibility. It has a moderate hardness. Furthermore, film formation can be easily performed, such as formation at a relatively low temperature.

Specific examples of the present invention will be described below, but the present invention is not limited to these examples. Example 1 (by the apparatus of FIG. 1 (A)) Material to be film-formed S1 EPDM rubber (ethylene / propylene / diene monomer terpolymer) Size 20 mm diameter × 10 mm height cylindrical electrode E1 size 200 mm diameter × Cylindrical D40 size with a height of 40 mm Diameter about 20 mm × Cylinder electrode E1 with a height of 10 mm Distance between electrode 1 and electrode 40 mm Film forming conditions Film forming material gas H ₂ 200 sccm CH _{4 10} sccm High frequency power frequency 13.56 MHz, 100 W Film pressure 0.1 Torr Film formation temperature (article S1 temperature) Room temperature Film formation time 60 min Example 2 (by the apparatus of FIG. 2 (A)) Material to be film-formed S3 Silicone rubber size Outer diameter 40 mm (inner diameter 20 mm) x height Ring-shaped electrode E3 size of 10 mm, cylindrical shape with a diameter of 200 mm and height of 40 mm, recessed part D3 size outer diameter approx. 0 mm (internal diameter approximately 20 mm) × height and 10 mm in distance between the ring-shaped electrodes E3 · electrode 3 40 mm film formation conditions deposition material gas H ₂ 200sccm CH ₄ 10sccm RF power frequency 13.56 MHz, 100W deposition pressure 0.1Torr formed Film temperature (article S3 temperature) Room temperature Film formation time 60 min Example 3 (by the apparatus of FIG. 4) Material S4 to be film-formed PTFE (polytetrafluoroethylene) size Frustum of a truncated cone S4U 5 mm top surface diameter 15 mm height 5 mm cylinder Part S4L Diameter 5 mm Height 10 mm Main electrode E5M size Column diameter 200 mm × height 40 mm columnar recess D5M size Diameter 15 mm × height 15 mm columnar auxiliary electrode E5S size Upper surface outer diameter approximately 15 mm, inner diameter approximately 5 mm Lower surface diameter approximately 15 mm A ring-shaped electrode E5 with a triangular cross section with a height of approximately 5 mm Electrode 3 between distance 40mm film formation conditions deposition material gas H ₂ 200 sccm CH ₄ 10 sccm High frequency power: 13.56 MHz, 100W deposition pressure 0.1Torr deposition temperature (article S4 temperature) room temperature film formation time 60min Example 4 (FIG. Material of film-forming article S4 similar to that of Example 3 Electrode E6 size similar to that of Example 3 Cylindrical electrode D6 size of diameter 200 mm × height 40 mm Cylinder electrode E6 of diameter approximately 6 mm × height 10 mm Distance between electrodes 3 40 mm Film forming conditions Film forming source gas H ₂ 200 sccm CH _{4 10} sccm High frequency power Frequency 13.56 MHz, 100 W Film forming pressure 0.1 Torr Film forming temperature (article S4 temperature) Room temperature Film forming time 60 min Film formation rate in Examples 1 to 4 and film thickness uniformity of each carbon film obtained by each Example The results of the evaluation are shown in Table 1 below. The film thickness uniformity was evaluated by measuring the film thickness at five points evenly arranged from the central portion of the film-forming surface to the outer periphery. In addition, the conventional plasma C of FIG.
Regarding Comparative Examples 1 to 3 (Comparative Example 3 corresponds to Examples 3 and 4), the VD apparatus was used to perform film formation on the same film-forming articles as in Examples 1 to 4 under the same conditions. The results are also shown. As a result, in Comparative Example 1, film formation was impossible, whereas
In Example 1 corresponding to this, film formation could be performed.
In Comparative Example 1, film formation was impossible because the upper surface, which is the film formation surface of the film formation article, was not included in the sheath, but in Example 1, the film formation surface was the same as the electrode. It is considered that the film formation could be performed because the film formation surface was included in the sheath by locating the film on the surface.

Further, Examples 2, 3 and 4 are Comparative Examples 2, 3
The film thickness uniformity and the film formation rate were higher. This is because, in Comparative Examples 2 and 3, a concave portion was formed in a state where the film-forming article was placed on the electrode, and the generated plasma went around to the concave portion and stayed there, resulting in non-uniform plasma density. It is considered that such recesses were not formed in Examples 2, 3 and 4 corresponding to these.

In Example 4, both the film forming rate and the film thickness uniformity were higher than those of Comparative Example 3 in which the film-forming article was placed on the electrode having a flat surface. In Example 4, although the film formation surface of the film formation article was located above the uppermost surface of the film formation article installation electrode exposed to the plasma, the film formation article was installed on the electrode. It is considered that this is because the concave portion around which the plasma circulates was not formed.

In the plasma CVD method and apparatus according to the embodiment of the present invention described above, the high frequency power source 22 for gas plasma conversion is connected to the electrode on which the film-forming article is placed, and the high frequency voltage is applied. Alternatively, a high frequency voltage may be applied to the counter electrode 3.

[0066]

As described above, according to the present invention, a film-forming raw material gas is turned into plasma by supplying electric power, and a film is formed under the plasma on an object to be film-formed which is placed on an electrode used for the gas plasma conversion. In the plasma CVD method for forming a film-deposited article, if the article-deposited article-installed electrode has a conventional flat surface, the uneven portion is exposed or becomes taller when the electrode is installed on the flat surface. Even if it is a plasma CVD capable of forming a uniform film on a desired film-forming surface such as the upper surface of the article.
Can provide the law.

Further, according to the present invention, such plasma CV
The plasma CVD method, which is the D method and is capable of forming a film only on a part of a film-formed article without requiring an expensive shielding member (for example, a vacuum electrical insulating tape) even when the film is formed on the part. Can be provided. Further, according to the present invention, it is possible to provide a plasma CVD apparatus and an electrode for installing a film-forming article, which can easily and inexpensively carry out the plasma CVD method.

[Brief description of drawings]

FIG. 1A is a diagram showing a schematic configuration of an example of a plasma CVD apparatus according to the present invention, and FIG. 1B, FIG.
FIG. 6D is a cross-sectional view showing another example of the film-forming target article-installed electrode.

FIG. 2A is a diagram showing a schematic configuration of still another example of the plasma CVD apparatus according to the present invention, and FIG. 2B is a schematic configuration of yet another example of the plasma CVD apparatus according to the present invention. FIG.

FIG. 3 (A) is a diagram showing a schematic configuration of still another example of the plasma CVD apparatus according to the present invention, and FIG. 3 (B) is a cross-sectional view of yet another example of the electrode for installing a film-forming article. is there.

FIG. 4 is a diagram showing a schematic configuration of still another example of the plasma CVD apparatus according to the present invention.

FIG. 5 is a diagram showing a schematic configuration of still another example of the plasma CVD apparatus according to the present invention.

FIG. 6A is a diagram showing a schematic configuration of an example of a conventional parallel plate type plasma CVD apparatus, and FIG. 6B is a state in which a film formation surface of a film formation article is arranged outside a plasma sheath. FIG.

[Explanation of symbols]

E1, E2, Ex, E3, E30, E4, E5, E6
Electrode E1 'to be deposited on the film-forming target Top surface E2' exposed to plasma of electrode E1 Top surface Ex2 exposed to plasma of electrode E2 Top surface E3 'exposed to plasma of electrode Ex Exposed to plasma of electrode E3' The uppermost surface E4 ′ exposed to the plasma of the electrode E4 the uppermost surface E5 ′ the uppermost surface E6 ′ exposed to the plasma of the electrode E5 the uppermost surface E30 ′ exposed to the plasma of the electrode E6 the body portion E31 ′ of the electrode E30 E30 Projection E4U Upper Electrode E4L Lower Electrode E4M Main Electrode E4S Auxiliary Electrode D1 Electrode E1 Recess D2 Electrode E2 Recess D3 Electrode E3 Recess D4 Electrode E4 Recess D5 Electrode E5 Recess D6 Electrode E6 Recess D4U Top Electrode E4U Hole D4L concave portion D5M of lower electrode E4L concave portion D5S of main electrode E5M concave portion S1 formed in a fitted state of the main electrode E5M and the film-forming article S4, 2, Sx, S3, S4 Film-forming target S1 ′ Film-forming surface S2 ′ of product S1 Film-forming surface Sx ′ of product S2 Film-forming surface S3 ′ of product Sx Film-forming surface S4 ′ of product S3 Article Film-forming surface of S4 S4U Frustum portion of article S4 S4L Cylindrical portion of article S4 1 Vacuum container 11 Exhaust device 2 High-frequency electrode 21 matching article installation electrode 22 Matching box 22 High-frequency power source 23 Heater 3 Ground electrode 4 Film-forming raw material gas supply section sh plasma sheath

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-8-139037 (JP, A) JP-A-6-140401 (JP, A) JP-A-9-55374 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) C23C 16/00-16/56 H01L 21/205 H01L 21/31

Claims (25)

(57) [Claims] 1. A film-forming raw material gas is turned into plasma by supplying electric power, and the film-forming target object placed on the film-forming article setting electrode is covered.
Plasma CVD for forming a film on the film formation surface under the plasma
A method of inserting the article as the electrode for installing the article to be film-formed , and, in the state where the article is inserted,
A gap between the top surface that is exposed to Zuma and the film formation surface of the article
Characterized but used after a recess for fitted so as not substantially occur, that the film formed on the deposition surface which is exposed to the article plasma in a state of being fitted into the deposition target article the recess And the plasma CVD method. 2. The concave portion of the electrode for depositing a film-forming article is fitted in such a manner that the uppermost surface of the electrode exposed to the plasma and the film-forming surface of the film-forming article are on the same plane. The plasma CVD method according to claim 1, wherein the plasma CVD method can be performed. 3. The article is fitted into the concave portion of the film-forming article installation electrode so that the uppermost surface of the electrode exposed to the plasma and the film-forming surface of the film-forming article are on the same plane. In the fitted state of the electrode and the article, a new recess is not formed between the electrode and the article in a plane including the uppermost surface of the electrode and the film formation surface of the article. The plasma CVD method according to claim 2, wherein a film is formed on the film formation surface. 4. The electrode for depositing a film-forming article, which comprises a plurality of electrode members and which forms the concave portion into which the film-forming article can be fitted in a state where the plurality of electrode members are combined, The plasma CVD method according to claim 1, 2 or 3, wherein a film-forming target is set in the recess and a film is formed on the film-forming surface of the product. 5. The article to be film-formed having a non-film-forming recess in the film-forming surface, wherein the non-film-forming recess is filled with a filling material to form a film on the film-forming surface. The plasma CVD method described in 1. 6. A plasma CVD method for converting a film-forming source gas into plasma by supplying power to form a film on the film-forming article installed on the film-forming article installation electrode under the plasma. As the film article-installed electrode, an electrode having a portion capable of filling the concave portion of the film-forming article having the concave portion is used, and exposed to the plasma of the article while the concave portion of the film-forming article is filled with the electrode. A plasma CVD method characterized in that a film is formed on the surface. 7. The plasma CVD method according to claim 1, wherein a film is formed on the film-forming article by using a capacitively coupled plasma CVD apparatus. 8. The plasma CVD method according to claim 1, wherein a carbon film is formed using a gas containing a carbon compound gas as the film forming raw material gas. 9. The plasma CVD method according to claim 1, wherein at least the film formation surface of the film formation article is made of an electrically insulating material. 10. The film-forming raw material gas supplied from the film-forming raw material gas supply means is turned into plasma by applying electric power, and the plasma is also deposited on the film-forming surface of the film- forming article installed on the film-forming article installation electrode. A plasma CVD apparatus for forming a film by
The article-to-be-deposited article installation electrode is fitted with the article , and
When the article is inserted, it is exposed to the plasma of the electrode.
Make sure there is almost no gap between the top surface and the film-forming surface of the article.
A plasma CVD apparatus characterized by having a recess for fitting into . 11. The recess of the film-forming article installation electrode is fitted such that the uppermost surface of the electrode exposed to the plasma and the film-forming surface of the film-forming article are on the same plane. The plasma CVD according to claim 10, which is capable of
apparatus. 12. The recess of the film-forming article-installed electrode is fitted such that the uppermost surface of the electrode exposed to the plasma and the film-forming surface of the film-forming article are located on the same plane. In addition, in the fitted state of the electrode and the article, a new recess is not formed between the electrode and the article in a plane including the electrode uppermost surface and the film formation surface. Item 12. A plasma CVD apparatus according to Item 11. 13. The film-forming target installation electrode is composed of a plurality of electrode members, and the recess into which the film-forming target is fitted can be formed in a state where the plurality of electrode members are combined. Alternatively, the plasma CVD apparatus according to item 12. 14. A main electrode member and one or more auxiliary electrode members as the plurality of electrode members, wherein the main electrode member is a main concave portion into which the film formation target article can be fitted and which is the main electrode. The member has a main concave portion into which the article can be fitted such that the uppermost surface of the member exposed to plasma and the film formation surface of the article are located on the same plane, and the auxiliary electrode member includes the main electrode member and the main electrode member. 14. The plasma CVD apparatus according to claim 13, wherein a new concave portion formed between the article and the article can be filled in the fitted state with the article. 15. A film-forming raw material gas supplied from a film-forming raw material gas supply means is turned into plasma by application of electric power, and a film is formed on the film-forming article installed on the film-forming article installation electrode under the plasma. The plasma CVD apparatus is characterized in that the electrode for depositing a film-forming article has a portion capable of filling the recess of the film-forming article having a recess. 16. The plasma CVD apparatus according to claim 10, wherein the film-forming source gas supply means is capable of supplying a source gas containing a carbon compound gas. 17. The plasma CVD according to claim 10, which is a capacitively coupled plasma CVD apparatus.
apparatus. 18. An electrode facing the film-forming article-installed electrode is provided, and at least one electrode is provided so that its position can be adjusted with respect to the other electrode so that the distance between the electrodes can be adjusted. The plasma CVD apparatus according to claim 17. 19. An electrode for installing an article to be deposited, which is used for carrying out the plasma CVD method according to claim 1 , wherein the article is fitted, and the electrode is attached in a state where the article is fitted.
There is a gap between the uppermost surface exposed to
An electrode provided with a recess for fitting so that it does not substantially occur . 20. The article can be fitted into the recess so that the uppermost surface of the electrode exposed to the plasma and the film formation surface of the film formation article are located on the same plane. The described electrode. 21. The recess can be fitted with the article such that the uppermost surface of the electrode exposed to plasma and the film formation surface of the film formation object are located on the same plane. 21. The electrode according to claim 20, wherein a new recess is not formed between the electrode and the article in a plane including the uppermost surface of the electrode and the film formation surface in the fitted state. 22. The concave portion, which is composed of a plurality of electrode members and into which the film-forming target article can be fitted, can be formed in a state where the plurality of electrode members are combined.
The electrode according to 9, 20, or 21. 23. A main electrode member and one or more auxiliary electrode members are provided as the plurality of electrode members, and the main electrode member is a main recessed portion into which the film formation target article can be fitted. The member has a main concave portion into which the article can be fitted such that the uppermost surface of the member exposed to plasma and the film formation surface of the article are located on the same plane, and the auxiliary electrode member includes the main electrode member and the main electrode member. 23. The electrode according to claim 22, which is capable of filling a new concave portion formed between the article and the article in a fitted state. 24. An electrode used for carrying out the plasma CVD method according to claim 6, wherein the electrode has a portion capable of filling the recess of the film-forming article having the recess. 25. The electrode according to claim 19, which is used in a capacitively coupled plasma CVD apparatus.