JP3526526B2 - Package for storing semiconductor elements - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element such as an LSI (Large Scale Integrated Circuit Element).

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element such as an LSI (Large Scale Integrated Circuit Element) is generally made of an electrically insulating material such as an aluminum oxide sintered body and has a substantially central portion on its upper surface. An insulating base provided with a recess for accommodating a semiconductor element, and tungsten and molybdenum led out from the periphery of the recess of the insulating base to the lower surface,
It is composed of a plurality of wiring layers made of refractory metal powder such as manganese, and a lid. The semiconductor element is mounted and housed on the bottom surface of the recess of the insulating base, and each electrode of the semiconductor element is electrically connected by a bonding wire or the like. It is connected to the wiring layer via the connecting means, and thereafter, the lid is joined to the upper surface of the insulating base with an adhesive for sealing, and the semiconductor element is hermetically sealed inside the container composed of the insulating base and the lid. A semiconductor device as a product is completed by housing.

In such a semiconductor device, each electrode of the semiconductor element is connected to the external electric circuit by connecting a part of the wiring layer extending to the lower surface of the insulating substrate to the wiring conductor of the external electric circuit board. An electric signal is input and output to and from each electrode of the semiconductor element via the wiring conductor of the external electric circuit board.

[0004]

However, in recent years,
Information processing devices have rapidly advanced in performance, and along with this, semiconductor elements have been driven at high speed, and have become extremely susceptible to noise. Since the wiring layer made of tungsten, molybdenum, etc., provided in the section easily propagates the harmonic noise, when the harmonic noise enters from the wiring conductor of the external electric circuit board into the wiring layer, this noise is directly transmitted to the wiring layer. It has a drawback that it propagates and enters the semiconductor element, causing the semiconductor element to malfunction.

The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to favorably absorb even if noise enters from a wiring conductor of an external electric circuit board into a wiring layer provided on an insulating substrate. It is another object of the present invention to provide a semiconductor element housing package that can effectively prevent noise from directly entering the semiconductor element and operate the semiconductor element normally over a long period of time.

[0006]

According to the present invention, a plurality of wiring layers having a mounting portion on which a semiconductor element is mounted on an upper surface and having an electric resistivity of 3 μΩ · cm or less derived from the mounting portion to the lower surface. A package for storing a semiconductor element, comprising: an insulating substrate having a substrate; and a lid attached to the insulating substrate and sealing a semiconductor element mounted on a mounting portion, wherein the insulating substrate comprises a plurality of SiO ₂ -Al. ₂ O ₃ —MgO—ZnO—B ₂ O ₃ -based crystalline glass is laminated and formed by co-firing with the wiring layer, and at least the lowermost insulating layer has a grain size of 0.5 μm to 10 μm. A magnetic insulating layer is formed by containing a magnetic material, and an inorganic filler having a particle size of 0.5 to 5 μm is externally added to the magnetic insulating layer by 10 to 10.
It is characterized by containing 40 parts by weight.

Further, the present invention is characterized in that the content of the magnetic material in the magnetic insulating layer is 50 to 90% by weight.

[0008]

According to the package for accommodating a semiconductor element of the present invention, the insulating substrate having the mounting portion on which the semiconductor element is mounted on the upper surface, and the plurality of wiring layers being adhered to the lower surface from the mounting portion is formed. Multiple SiO ₂ -Al ₂ O ₃ -MgO
-ZnO-B ₂ O ₃ -based crystalline glass is laminated to form a magnetic insulating layer containing a magnetic material in at least the lowermost insulating layer. Even if noise enters the wiring layer, the noise is converted into heat energy and absorbed by the magnetic material contained in the magnetic insulating layer located at the bottom of the insulating substrate, and as a result, the noise enters the wiring layer. It does not propagate to the semiconductor element, and the semiconductor element can always be normally operated.

Further, according to the package for accommodating semiconductor elements of the present invention, the insulating layer constituting the insulating substrate is made of SiO ₂ -Al.
₂ O ₃ —MgO—ZnO—B ₂ O ₃ type crystalline glass, and the SiO ₂ —Al ₂ O ₃ —MgO—Zn
The firing temperature of OB ₂ O ₃ based crystalline glass is 800 to
Since the temperature is as low as 1050 ° C., the magnetic material does not lose its magnetism even if the crystalline glass is mixed with the magnetic material and fired, and noise can be well absorbed.

At the same time, SiO ₂ --Al ₂ O ₃ --MgO--Z
Since the firing temperature of the nO-B ₂ O ₃ -based crystalline glass is low, it is possible to form a wiring layer made of a material having a low melting point, such as copper, silver, and gold, and a low conduction resistance by simultaneous firing. When the electric signal propagates through the layer, it is possible to effectively prevent the electric signal from being attenuated or the like and operate the semiconductor element accurately.

[0012] SiO ₂ over Al ₂ further constituting the insulating substrate
Since an inorganic filler is externally added to O ₃ —MgO—ZnO—B ₂ O ₃ -based crystalline glass in the range of 10 to 40 parts by weight, SiO ₂ —Al ₂ O ₃ —MgO—ZnO
The mechanical strength of the —B ₂ O ₃ -based crystalline glass is strengthened, and thereby, it is possible to effectively prevent the occurrence of damage or the like even when an external force or the like is applied to the insulating substrate.

[0013]

DETAILED DESCRIPTION OF THE INVENTION The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is an insulating base and 2 is a lid. The insulating base body 1 and the lid body 2 constitute a container for housing the semiconductor element therein.

The insulating base 1 is provided with a recess 1a in which the semiconductor element 3 is placed and housed in the center of the upper surface thereof, and the semiconductor element 3 is adhered and fixed to the bottom surface of the recess 1a via an adhesive material.

The insulating substrate 1 comprises three SiO ₂ -Al ₂
O ₃ and the over MgO over ZnO over B ₂ O ₃ based dielectric layer 4, 5 and 6 made of crystalline glass is formed by laminating integrally,
For example, SiO ₂ , Al ₂ O ₃ , MgO, ZnO, B ₂
A suitable organic solvent, a solvent, a plasticizer, etc. are added to O ₃ and mixed to form a slurry, and the slurry is formed into a sheet by a doctor blade method, a calendar roll method or the like, and a plurality of green sheets (green sheet) are prepared. A green sheet is obtained, and thereafter, the green sheet is subjected to appropriate punching processing, laminated vertically in a predetermined order, and fired at a temperature of 800 to 1050 ° C.

Further, the insulating base 1 is formed with a plurality of wiring layers 8 extending from the periphery of the recess 1a to the lower surface through the through holes 7 provided in the insulating base 1, and the wiring layers 8 are housed inside. Each of the electrodes of the semiconductor element 3 serves to electrically connect the electrodes of the semiconductor element 3 to an external electric circuit. Electrically connected and insulating base 1
The external lead pin 10 connected to the wiring conductor of the external electric circuit board is joined to the portion led out to the lower surface of the via a brazing material.

The wiring layer 8 is made of a metal material having an electric resistivity of 3 μΩ · cm or less such as copper, silver and gold. For example, it is obtained by adding and mixing a suitable organic solvent or solvent to a metal powder such as copper. Around the concave portion of the insulating substrate 1 by applying the metal paste by printing in a predetermined pattern in advance on the upper surface of the green sheet to be the insulating substrate 1 and in the holes formed by punching the green sheet by a conventionally known screen printing method or the like. To the lower surface. In this case, the wiring layer 8 made of a metal material such as copper, silver or gold is SiO ₂ -Al ₂ O ₃
Since the firing temperature of the insulating substrate 1 made of over MgO over ZnO over B ₂ O ₃ based crystalline glass is 800 to 1050 ° C. and lower,
When the insulating base 1 is fired, the metal powder of the metal paste, such as copper or silver, is not dispersed, and can be formed at a predetermined position on the insulating base 1 by simultaneous firing with the insulating base 1.

Since copper, silver, gold, etc. forming the wiring layer 8 have a low electric resistivity of 3 μΩ · cm or less, even if the electric signal propagates through the wiring layer 8, the electric signal is attenuated. Can be effectively prevented, and as a result, an electric signal can be accurately taken in and out of the semiconductor element 3, and the semiconductor element 3 can always be normally operated.

When the wiring layer 8 is made of copper or silver, the wiring surface 8 is formed by depositing gold having excellent corrosion resistance on the exposed surface to a thickness of 1.0 to 20 μm by a plating method.
It is possible to effectively prevent the above-mentioned oxidative corrosion and to strengthen the connection between the wiring layer 8 and the electrical connecting means 9 such as a bonding wire and the connection of the external lead pin 10 to the wiring layer 8. Therefore, when the wiring layer 8 is made of copper or silver, it is preferable to deposit a metal having excellent corrosion resistance such as gold on the exposed surface to a thickness of 1.0 to 20 μm by a plating method.

The external lead pins 10 bonded to the wiring layer 8 on the lower surface of the insulating substrate 1 are made of a metal material such as iron-nickel-cobalt alloy, iron-nickel alloy, and copper, and each electrode of the semiconductor element 3 is externally connected. Used to electrically connect to an electric circuit.

The external lead pin 10 is formed in a predetermined shape by adopting a conventionally known metal working method such as a rolling working method or a punching working method for an ingot (lump) of iron-nickel-cobalt alloy or the like.

The external lead pin 10 is, for example, a brazing material made of a metal material having a melting point of 500 ° C. or less, specifically,
10 to 50% by weight of indium or tin, and 10 to 70
10% by weight silver, 10-75% by weight antimony
Alloys consisting of up to 15% by weight of copper, 15 to 25% by weight of tin and 75 to 85% by weight of gold, 10 to 15
The wiring layer 8 is formed on the lower surface of the insulating substrate 1 by using an alloy of germanium of 85 wt% and gold of 85 to 90 wt%, an alloy of lead and at least one of tin, indium, antimony and bismuth. To be joined to.

When the external lead pin 10 is bonded to the wiring layer 8 on the lower surface of the insulating substrate 1 by using a brazing material made of a metal material having a melting point of 500 ° C. or less, the brazing material at the time of brazing is heated and melted. Since the temperature is low and the insulating base material 1 is not largely deformed by the heat of heating and melting the brazing material, it is possible to effectively prevent the wiring layer 8 provided on the insulating base material 1 from being broken. it can.

Thus, according to the above-mentioned package for accommodating semiconductor elements, the semiconductor element 3 is mounted and fixed in the recess 1a of the insulating substrate 1 via the adhesive, and each electrode of the semiconductor element 3 is electrically connected by a bonding wire or the like. It is connected to the wiring layer 8 via the means 9, and then the lid 2 is joined to the upper surface of the insulating base 1 via a sealing member such as glass, resin, or brazing material to form the insulating base 1 and the lid 2. A semiconductor device as a product is obtained by hermetically sealing the semiconductor element 3 inside a container made of.

In such a semiconductor device, when the external lead pin 10 is connected to a wiring conductor (not shown) of an external electric circuit board via solder or the like, the electrodes of the semiconductor element 3 housed inside the container are the external lead pin 10 and the wiring layer. 8 and the electrical connection means 9 are connected to the wiring conductor of the external electric circuit board, so that an electric signal can be taken in and out between the semiconductor element 3 and the wiring conductor of the external electric circuit board.

In the present invention, the insulating layers 4, 5 and 6 constituting the insulating substrate 1 are formed of SiO ₂ —Al ₂ O ₃ —MgO—Z.
It is important to use nO-B ₂ O ₃ based crystalline glass.

This SiO ₂ --Al ₂ O ₃ --MgO--Zn
The OB ₂ O ₃ based crystalline glass is, for example, SiO ₂ : 4.
0 to 46% by weight, Al ₂ O ₃ : 25 to 30% by weight, Mg
O: 8 to 13% by weight, ZnO: 6 to 9% by weight, B
₂ O ₃ : 8 to 11% by weight.

The above SiO ₂ --Al ₂ O ₃ --MgO--Zn
O-B ₂ O ₃ -based crystalline glass is formed by firing at a temperature of garnite (ZnO.Al ₂ O ₃ ) or cordierite (2MgO.
2Al ₂ O _3), spinel-type crystal phase (MgO · Al ₂ O
₃ , ZnO.Al ₂ O ₃ ) and other crystal phases are generated, but the strength of the insulating substrate 1 is improved by the generation of these crystal phases.

Said SiO ₂ --Al ₂ O ₃ --MgO--Zn
The firing temperature of OB ₂ O ₃ based crystalline glass is 800 to
Since the wiring layer 8 has a low melting point of 1050 ° C., the insulating substrate 1 has a low melting point such as copper, silver, and gold and has a low conduction resistance.
It becomes possible to form the semiconductor element 3 by firing simultaneously, and when the electric signal propagates through the wiring layer 8, it is possible to effectively prevent the electric signal from being attenuated and the semiconductor element 3 can be operated accurately.

The SiO ₂ -Al ₂ O ₃ -MgO-ZnO-B ₂ O ₃ -based crystalline glass has a relative dielectric constant of about 5
Since it is as low as (room temperature 1 MHz), propagation of an electric signal to the wiring layer 8 formed on the insulating substrate 1 does not cause propagation delay, and as a result, the electric signal can be propagated to the wiring layer 8 at high speed. Is possible.

The above-mentioned SiO ₂ --Al ₂ O ₃ --MgO
Over ZnO over B ₂ O ₃ based crystalline glass, the amount of SiO 4
If it is less than 0% by weight or exceeds 46% by weight, the SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B ₂ O ₃ -based crystalline glass has a high firing temperature and is a wiring layer made of a metal material such as copper. It becomes difficult to fire 8 at the same time. Therefore, S
The amount of iO ₂ is preferably set in the range of 40 to 46% by weight.

If the amount of Al ₂ O ₃ is less than 25% by weight or exceeds 30% by weight, SiO ₂ -Al ₂ O ₃ -Mg
The firing O over ZnO over B ₂ O ₃ system interconnection layer 8 baking temperature of the crystallizable glass is made of a metal material such as copper becomes high at the same time is difficult. Therefore, the amount of Al ₂ O ₃ is 2
It is preferably set in the range of 5 to 30% by weight.

When the amount of MgO is less than 8% by weight, firing is performed to obtain SiO ₂ --Al ₂ O ₃ --MgO--ZnO--B.
Cordierite (2MgO.2Al) generated when the insulating substrate 1 made of ₂ O ₃ type crystalline glass is manufactured.
The amount of ₂ O ₃ ) decreases and the strength of the insulating substrate 1 cannot be greatly improved, and when it exceeds 13% by weight, S
iO ₂ over Al ₂ O ₃ that is baked over MgO over ZnO over B ₂ O ₃ based wiring layer 8 made of a metal material such as copper is as firing temperature of the crystallizable glass is high at the same time difficult. Therefore, the amount of MgO is preferably set in the range of 8 to 13% by weight.

When the amount of ZnO is less than 6% by weight, firing is performed to obtain SiO ₂ --Al ₂ O ₃ --MgO--ZnO--B.
_{When the} insulating substrate 1 made of ₂ O ₃ -based crystalline glass is produced, the amount of garnite (ZnO.Al ₂ O ₃ ) produced is small and the strength of the insulating substrate 1 cannot be greatly improved. SiO ₂ -Al ₂ O when it exceeds the weight percentage
₃ over MgO over ZnO over B ₂ O ₃ system firing temperature of the crystalline glass is made of a metal material such as copper becomes high wiring layer 8
It becomes difficult to bake them simultaneously. Therefore, the amount of ZnO is preferably set in the range of 6 to 9% by weight.

Further in fabricating the insulating base 1, the amount of B ₂ O ₃ is made of SiO ₂ over Al ₂ O ₃ over MgO over ZnO over B ₂ O ₃ based crystalline glass by firing less than 8 wt%, gahnite _{(ZnO · Al 2 O 3)} , cordierite _{(2MgO · 2Al 2 O 3)} , spinel-type crystal phase (M
Crystal phases such as gO.Al ₂ O ₃ and ZnO.Al ₂ O ₃ ) are excessively generated, the insulating substrate 1 becomes porous, and the reliability of the airtightness of the container is greatly reduced. If it exceeds 5% by weight, the chemical resistance is greatly reduced, and the reliability of the semiconductor blocking storage package is reduced. Therefore, B
The amount of ₂ O ₃ is preferably set in the range of 8 to 11% by weight.

Further, in the present invention, it is important that at least the lowermost insulating layer 4 among the insulating layers 4, 5, 6 constituting the insulating substrate 1 contains a magnetic material to form the magnetic insulating layer 4a. .

The lowermost layer of the insulating substrate 1 is the magnetic insulating layer 4a.
When the external lead pin 10 is connected to the wiring conductor of the external electric circuit board and an electric signal is input and output between the semiconductor element 3 and the external electric circuit, noise is generated in the wiring layer 8 from the wiring conductor of the external electric circuit board. Even if it tries to enter, the noise is generated in the magnetic insulating layer 4 located at the lowermost layer of the insulating substrate 1.
The magnetic material contained in a does not convert into heat energy and is absorbed and does not enter the wiring layer 8. As a result,
The noise hardly propagates through the wiring layer 8 and enters the semiconductor element 3, which allows the semiconductor element 3 to always operate normally.

[0038] Incidentally, the magnetic insulating layer 4a is during firing since the firing temperature of the SiO ₂ chromatography Al ₂ O ₃ over MgO over ZnO over B ₂ O ₃ based crystalline glass is 800 to 1050 ° C. and lower,
The magnetism of the magnetic material is not lost, and this makes it possible to favorably absorb noise that has entered the wiring layer 8.

The magnetic material contained in the magnetic insulating layer 4a includes ZnFe ₂ O ₄ , MnFe ₂ O ₄ and FeFe _2.
O ₄ , CoFe ₂ O ₄ , NiFe ₂ O ₄ , CuFe ₂ O
_At least one of ₄ is preferably used. For example, ZnFe ₂ O is added to the green sheet that becomes the insulating layer 4 by firing.
₄ , MnFe ₂ O ₄ , FeFe ₂ O ₄ , CoFe
_A magnetic powder made of at least one of ₂ O ₄ , NiFe ₂ O ₄ , and CuFe ₂ O ₄ is added and contained in the insulating layer 4 to form the magnetic insulating layer 4a.

The magnetic insulating layer 4a is made of a magnetic material of 90%.
If the amount of the crystalline glass in excess of 10% by weight, that is, SiO ₂ —Al ₂ O ₃ —MgO—ZnO—B ₂ O ₃ is less than 10% by weight, SiO ₂ —Al ₂ O ₃ —MgO—Zn
Since the firing temperature of the OB ₂ O ₃ -based crystalline glass becomes high, it becomes difficult to simultaneously fire the wiring layer 8 made of a metal material such as copper, and the magnetic material is less than 50% by weight, in other words, SiO. ₂ -Al ₂ O ₃ -MgO-ZnO-B ₂
If the amount of the O ₃ -based crystalline glass exceeds 50% by weight, it is not possible to properly prevent noise from entering the wiring layer 8 from the wiring conductor of the external electric circuit board, which causes the semiconductor element 3 to malfunction. Will end up. Therefore, the magnetic insulating layer 4a
It is preferable to keep the amount of the magnetic material in the range of 50 to 90% by weight.

Further, the magnetic material has a particle size of 0.5 μm.
If it is less than the above, it is calcined by firing SiO ₂ -Al ₂ O ₃ -Mg
When manufacturing the insulating substrate 1 made of O—ZnO—B ₂ O ₃ based crystalline glass, SiO ₂ —Al ₂ O ₃ —MgO—Zn
When the reaction with the OB ₂ O ₃ -based crystalline glass proceeds, the residual ratio of the magnetic material decreases and it becomes impossible to effectively absorb noise, and when it exceeds 10 μm, SiO ₂ —Al ₂
Since the O ₃ —MgO—ZnO—B ₂ O ₃ -based crystalline glass has a high firing temperature, it becomes difficult to fire it simultaneously with the wiring layer 8 made of a metal material such as copper. Therefore, the particle size of the magnetic material is in the range of 0.5 μm to 10 μm.

Furthermore, the magnetic insulating layer 4 and the insulating layers 5 and 6 which constitute the insulating base 1 have an inorganic filler,
Specifically, powder of alumina, silica, silicon nitride, aluminum nitride or the like is added externally and contained in an amount of 10 to 40 parts by weight, so that the mechanical strength is significantly improved, and damage or the like is caused by the application of external force. Is effectively prevented. Therefore,
It is SiO ₂ -Al ₂ O that improves the mechanical strength of the insulating substrate 1 and prevents damage or the like from being applied by an external force.
₃ over MgO over ZnO over B ₂ O ₃ based inorganic filler outer 10 to 40 parts by weight additives are contained in addition to the magnetic insulating layer 4 and the insulating layers 5 and 6 made of crystalline glass and it kept.

When an inorganic filler is added to the magnetic insulating layer 4 and the insulating layers 5 and 6 constituting the insulating substrate 1, since the particle diameter of the inorganic filler is in the range of 0.5 to 5 μm, the inorganic filler is glass. The magnetic insulating layer 4 and the insulating layer 5 are uniformly dispersed and contained in the ceramic sintered body.
The mechanical strength of the insulating substrate 1 made of 6 can be improved uniformly. Therefore, the particle size of the inorganic filler is in the range of 0.5 to 5 μm.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the scope of the present invention. For example, in the above-mentioned embodiments, the external lead pin 10 is used. Is connected to the wiring conductor of the external electric circuit board so that each electrode of the semiconductor element 3 is connected to the external electric circuit. However, the wiring layer extending to the lower surface of the insulating base 1 without providing the external lead pin. 8 may be directly connected to the wiring conductor of the external electric circuit board.

Further, in the above-mentioned embodiment, the insulating substrate 1 is formed of three insulating layers 4, 5 and 6, but it may be formed of two insulating layers or four or more insulating layers. Good.

Further, in the above-mentioned embodiments, only the lowermost insulating layer 4 of the insulating substrate 1 is the magnetic insulating layer 4a, but all the insulating layers may be made to contain a magnetic material to form the magnetic insulating layer.

[0047]

According to the package for accommodating a semiconductor element of the present invention, it has a mounting portion on which a semiconductor element is mounted,
An insulating substrate on which a plurality of wiring layers are formed from the mounting portion to the lower surface is formed into a plurality of SiO ₂ —Al ₂ O ₃ —Mg
The wiring conductor of the external electric circuit board is formed by stacking insulating layers made of O-ZnO-B ₂ O ₃ -based crystalline glass and forming a magnetic insulating layer by including a magnetic material in at least the lowermost insulating layer. Even if noise tries to enter the wiring layer, the noise is converted into heat energy and absorbed by the magnetic material contained in the magnetic insulating layer located at the bottom of the insulating substrate, and as a result, the noise enters the wiring layer. Therefore, the semiconductor element can be always operated normally without being propagated to the semiconductor element.

Further, according to the package for accommodating semiconductor elements of the present invention, the insulating layer constituting the insulating substrate is made of SiO ₂ -Al.
₂ O ₃ —MgO—ZnO—B ₂ O ₃ type crystalline glass, and the SiO ₂ —Al ₂ O ₃ —MgO—Zn
The firing temperature of OB ₂ O ₃ -based crystalline glass is 850 to
Since the temperature is as low as 1000 ° C., the magnetic material does not lose its magnetism even if the crystalline glass is mixed with a magnetic material and fired, and noise can be absorbed well.

At the same time, SiO ₂ --Al ₂ O ₃ --MgO--Z
Since the firing temperature of the nO-B ₂ O ₃ -based crystalline glass is low, it is possible to form a wiring layer made of a material having a low melting point, such as copper, silver, and gold, and a low conduction resistance by simultaneous firing. When the electric signal propagates through the layer, it is possible to effectively prevent the electric signal from being attenuated or the like and operate the semiconductor element accurately.

The SiO ₂ chromatography Al ₂ further constituting the insulating substrate
Since an inorganic filler is externally added to O ₃ —MgO—ZnO—B ₂ O ₃ -based crystalline glass in the range of 10 to 40 parts by weight, SiO ₂ —Al ₂ O ₃ —MgO—ZnO
The mechanical strength of the —B ₂ O ₃ -based crystalline glass is strengthened, and thereby, it is possible to effectively prevent the occurrence of damage or the like even when an external force or the like is applied to the insulating substrate.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

[Explanation of symbols]

1 ... Insulating substrate 2 ... Lid 3 ・ ・ Semiconductor element 4, 5, 6 ... Insulating layer 4a ... Magnetic insulating layer

Claims (2)

(57) [Claims] 1. An electrical resistivity which has a mounting portion on which a semiconductor element is mounted and which is led out from the mounting portion to the lower surface.
A package for storing a semiconductor element, comprising: an insulating base having a plurality of wiring layers of 3 μΩ · cm or less ; and a lid attached to the insulating base and sealing a semiconductor element mounted on a mounting portion. , The insulating substrate is made of a plurality of SiO ₂ -Al
_An insulating layer made of ₂ O ₃ —MgO—ZnO—B ₂ O ₃ -based crystalline glass is laminated and formed by co-firing with the wiring layer, and at least the lowermost insulating layer has a grain size of 0. ．
A magnetic insulating layer containing a magnetic material of 5 μm to 10 μm, wherein the magnetic insulating layer has an inorganic particle size of 0.5 to 5 μm
A package for accommodating a semiconductor device, characterized in that a filler is added externally to contain 10 to 40 parts by weight . 2. The content of the magnetic material in the magnetic insulating layer is 50 to 90% by weight.
The package for storing a semiconductor element according to.