JP3529657B2 - Method of attaching semiconductor element to thermoplastic resin substrate, method of manufacturing non-contact IC card, and thermoplastic resin substrate having semiconductor element attached - Google Patents
Method of attaching semiconductor element to thermoplastic resin substrate, method of manufacturing non-contact IC card, and thermoplastic resin substrate having semiconductor element attachedInfo
- Publication number
- JP3529657B2 JP3529657B2 JP02883299A JP2883299A JP3529657B2 JP 3529657 B2 JP3529657 B2 JP 3529657B2 JP 02883299 A JP02883299 A JP 02883299A JP 2883299 A JP2883299 A JP 2883299A JP 3529657 B2 JP3529657 B2 JP 3529657B2
- Authority
- JP
- Japan
- Prior art keywords
- thermoplastic resin
- semiconductor element
- resin substrate
- circuit pattern
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
- H10W72/856—Bump connectors and die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Credit Cards Or The Like (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、鉄道の定期券、ス
キー場のリフト券、ドア入退室管理カード、電子マネー
等に利用される非接触ＩＣカードの、半導体素子を取付
けた熱可塑性樹脂基板及び、熱可塑性樹脂基板に半導体
素子を取付ける方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-contact IC card used for railway commuter passes, ski lift tickets, door entry / exit management cards, electronic money, etc., and has a thermoplastic resin substrate on which semiconductor elements are mounted. And a method of mounting a semiconductor element on a thermoplastic resin substrate.
【０００２】[0002]
【従来の技術】非接触ＩＣカードは、大きな記憶容量と
高いセキュリティ機能を有するといったＩＣカードの特
徴に加えて、ＩＣカードをカード読み取り機のスロット
に挿入する手間が不要であるという便利さ等から、近年
では、鉄道の定期券、スキー場のリフト券、ドア入退室
管理カード、電子マネー等に幅広く利用されている。非
接触ＩＣカードは、カード読み取り機との間の通信距離
の違いにより、密着型、近傍型、近接型等に分類され、
一般にデータの通信は電磁誘導方式により行われてい
る。周波数１３．５６MHzの短波を使う近接型の非接触
ＩＣカードは今後、鉄道の定期券、テレホンカード等に
採用され、非接触ＩＣカードの主流になると予想されて
いる。2. Description of the Related Art A non-contact type IC card has the features of an IC card having a large storage capacity and a high security function, and also has the convenience that it is not necessary to insert the IC card into a slot of a card reader. In recent years, it has been widely used for railway commuter passes, ski lift tickets, door entry / exit management cards, electronic money, and the like. The non-contact IC card is classified into a contact type, a proximity type, a proximity type, etc., depending on the difference in communication distance with the card reader.
Generally, data communication is performed by an electromagnetic induction method. Proximity-type non-contact IC cards that use short waves with a frequency of 13.56 MHz are expected to be used in railway commuter passes, telephone cards, etc. and become the mainstream of non-contact IC cards.
【０００３】アンテナコイルとＩＣチップを内蔵し、前
記アンテナコイルを介してカード読み取り機とデータの
授与を行う非接触ＩＣカードの半導体素子を取付けた熱
可塑性樹脂基板を製造する際には、アンテナコイルとし
て、銅の巻き線によるコイルや、銀ペースト等の導体ペ
ーストを絶縁性の基盤に渦巻状に印刷したコイルや、銅
箔等の金属箔をエッチングしたコイル等が用いられてい
る。中でも導体ペーストを印刷してコイルや回路パター
ンを形成する方法が盛んになってきている。図６から図
９は従来の非接触ＩＣカードの製造方法を示す断面図で
ある。図６ないし図９においては、それぞれの構成の理
解を容易にするために、各要素の図の上下方向の寸法を
左右方向の寸法より拡大して示している。When manufacturing a thermoplastic resin substrate on which a semiconductor element of a non-contact IC card which incorporates an antenna coil and an IC chip and which gives and receives data to and from a card reader through the antenna coil is manufactured, the antenna coil is used. As the coil, a coil formed by winding a copper wire, a coil in which a conductive paste such as a silver paste is spirally printed on an insulating base, a coil obtained by etching a metal foil such as a copper foil, and the like are used. Above all, a method of forming a coil or a circuit pattern by printing a conductor paste has become popular. 6 to 9 are sectional views showing a conventional method for manufacturing a non-contact IC card. In FIGS. 6 to 9, in order to facilitate understanding of the respective configurations, the vertical dimension of each element is shown in a larger scale than the horizontal dimension.
【０００４】図６及び図７は、第１の従来例の製造方法
を示す各工程の非接触ＩＣカードの断面図である。図６
のステップ１では、基材１９の表面に導電性ペーストを
用いて渦巻き状のコイルパターン３、及び回路パターン
２を印刷し、硬化させる。コイルパターン３と回路パタ
ーン２の図の上下方向の拡大率は基材１９より大きくな
されている。導電性ペーストとしては、銀ペーストが好
適である。導電性ペーストによる印刷は、スクリーン印
刷、オフセット印刷、グラビア印刷等によって行われ
る。例えばスクリーン印刷では１６５メッシュ／イン
チ、乳剤厚１０μｍのマスクを用いて導電性ペーストの
厚さを約３０μｍにする。基材１９及び後述の基材２３
にはポリエチレンテレフタレート、塩化ビニル、ポリカ
ーボネート、アクリロニトリルブタジエンスチレン等の
厚さ０．１〜０．５ｍｍ程度のシート状のものが用いら
れる。6 and 7 are cross-sectional views of the non-contact IC card in each step showing the manufacturing method of the first conventional example. Figure 6
In step 1), the spiral coil pattern 3 and the circuit pattern 2 are printed on the surface of the base material 19 using a conductive paste and cured. The enlargement ratio of the coil pattern 3 and the circuit pattern 2 in the vertical direction in the figure is larger than that of the base material 19. Silver paste is suitable as the conductive paste. Printing with the conductive paste is performed by screen printing, offset printing, gravure printing, or the like. For example, in screen printing, the thickness of the conductive paste is set to about 30 μm using a mask of 165 mesh / inch and an emulsion thickness of 10 μm. Base material 19 and base material 23 described later
A sheet-like material having a thickness of about 0.1 to 0.5 mm, such as polyethylene terephthalate, vinyl chloride, polycarbonate, acrylonitrile butadiene styrene, etc., is used.
【０００５】ステップ２では、導電性ペーストにより形
成された回路パターン２の上に異方性導電シート２０を
配置し、加熱しつつ加圧する工具である熱ツール２１に
より加熱しつつ加圧し、異方性導電シート２０を回路パ
ターン２に仮圧着する。異方性導電シート２０は、エポ
キシ等の熱可塑性樹脂の中に金やニッケル等の金属粉を
混入し、厚さ１０〜３０μｍのシート状にしたものであ
り、市販されている。加熱条件は、熱ツール２１の温度
が２００℃、加圧時間は５秒程度である。ステップ３で
は、半導体素子５を、その電極部６が異方性導電シート
２０が仮圧着された回路パターン２の位置に合うように
配置する。In step 2, the anisotropic conductive sheet 20 is placed on the circuit pattern 2 formed of the conductive paste, and is heated and pressed by a thermal tool 21 which is a tool for heating and pressing, so that the anisotropic conductive sheet 20 is anisotropic. The conductive conductive sheet 20 is temporarily pressure-bonded to the circuit pattern 2. The anisotropic conductive sheet 20 is a commercially available sheet made by mixing metal powder such as gold or nickel into a thermoplastic resin such as epoxy to form a sheet having a thickness of 10 to 30 μm. As for heating conditions, the temperature of the thermal tool 21 is 200 ° C., and the pressurizing time is about 5 seconds. In step 3, the semiconductor element 5 is arranged such that its electrode portion 6 is aligned with the position of the circuit pattern 2 to which the anisotropic conductive sheet 20 is temporarily pressure-bonded.
【０００６】ステップ４では、熱ツール２２により半導
体素子５を加熱しつつ加圧する。その結果、電極部６は
異方性導電シート２０を貫通して回路パターン２に接触
する。また加熱により、異方性導電シート２０が熔解
し、加熱終了後に硬化する。異方性導電シート２０に熱
を加えて加圧すると、加圧部のみが導通状態になる。加
熱条件は２００℃、２０秒程度である。図７のステップ
５では、基板１９の半導体素子５が配置されている側に
熱可塑性のシート２３を配置し、金型９Ａ及び９Ｂでは
さんで加熱しつつ加圧する。その結果、ステップ６に示
す断面構造の非接触ＩＣカードが完成する。図８は第２
の従来例の製造方法を示す各工程の非接触ＩＣカードの
断面図である。図８に示す方法では異方性導電シートを
用いずに、基板１５の上に導電性ペーストにより形成し
た回路パターン２に直接半導体素子５を接合する。図８
のステップ１では、熱可塑性の基材１５の表面に導電性
ペーストを用いてコイルパターン３と回路パターン２を
印刷し、硬化させる。In step 4, the semiconductor tool 5 is heated and pressed by the thermal tool 22. As a result, the electrode portion 6 penetrates the anisotropic conductive sheet 20 and contacts the circuit pattern 2. Moreover, the anisotropic conductive sheet 20 is melted by heating, and is cured after the heating is completed. When heat is applied to the anisotropic conductive sheet 20 to apply pressure, only the pressurizing portion is brought into a conductive state. The heating conditions are 200 ° C. and about 20 seconds. In step 5 of FIG. 7, the thermoplastic sheet 23 is arranged on the side of the substrate 19 on which the semiconductor element 5 is arranged, and the thermoplastic sheet 23 is sandwiched between the molds 9A and 9B and heated and pressed. As a result, the contactless IC card having the sectional structure shown in step 6 is completed. FIG. 8 is the second
FIG. 7 is a cross-sectional view of a non-contact IC card in each step showing the manufacturing method of the conventional example. In the method shown in FIG. 8, the semiconductor element 5 is directly bonded to the circuit pattern 2 formed of the conductive paste on the substrate 15 without using the anisotropic conductive sheet. Figure 8
In step 1, the coil pattern 3 and the circuit pattern 2 are printed on the surface of the thermoplastic base material 15 using a conductive paste and cured.
【０００７】ステップ２では、半導体素子５を基材１５
に仮止めするために接着剤４を基材１５と半導体素子５
の間に塗布した後、半導体素子５を、その電極部６が導
電性ペーストにより形成された回路パターン部２に接触
するように位置決めし、接着剤を硬化させて仮止めす
る。尚、仮止め用の接着剤４を塗布せず、導電性ペース
トの硬化前に半導体素子５を回路パターン２に接触する
ように位置決めし、導電性ペ−ストの硬化により半導体
素子５を固定する場合もある。ステップ３では、半導体
素子５が取付けられている側に基材１５を覆う大きさの
熱可塑性シート１６を配置し、金型９Ａと９Ｂではさん
で加熱しつつ加圧する。その結果、ステップ４におい
て、図に示す断面構造の非接触ＩＣカードが完成する。
上記の第１及び第２の従来例の製造方法で製造された非
接触ＩＣカードの電源としては、外部からの電波により
アンテナコイル３に誘起した誘導電力を利用する。この
電力により半導体素子５を動作させ情報処理をし、ある
いは、カード読み取り機との情報の授受を行う。In step 2, the semiconductor element 5 is attached to the base material 15
The adhesive 4 is used to temporarily fix it to the substrate 15 and the semiconductor element 5.
After the application, the semiconductor element 5 is positioned so that the electrode portion 6 thereof contacts the circuit pattern portion 2 formed of the conductive paste, and the adhesive is cured and temporarily fixed. Incidentally, the adhesive 4 for temporary fixing is not applied, the semiconductor element 5 is positioned so as to come into contact with the circuit pattern 2 before the conductive paste is cured, and the semiconductor element 5 is fixed by curing the conductive paste. In some cases. In step 3, a thermoplastic sheet 16 having a size that covers the base material 15 is arranged on the side where the semiconductor element 5 is attached, and the thermoplastic sheet 16 is sandwiched between the molds 9A and 9B and heated and pressed. As a result, in step 4, the non-contact IC card having the sectional structure shown in the figure is completed.
As the power source of the non-contact IC card manufactured by the above-described first and second conventional manufacturing methods, the induction power induced in the antenna coil 3 by the electric wave from the outside is used. This electric power operates the semiconductor element 5 to perform information processing, or exchange information with a card reader.
【０００８】[0008]
【発明が解決しようとする課題】上記従来の非接触ＩＣ
カードの半導体素子を取付けた熱可塑性樹脂基板の製造
方法では、以下の問題があった。図５に示す非接触ＩＣ
カードの第１の製造方法では、異方性導電シート２０を
使用する為に、仮圧着の工程が必要となり、工程数が多
く生産性の向上が難しいという問題がある。また、異方
性導電シートは高価であるので、コストアップの要因と
なっていた。The above-mentioned conventional non-contact IC
The method of manufacturing a thermoplastic resin substrate to which the semiconductor element of the card is attached has the following problems. Non-contact IC shown in FIG.
In the first manufacturing method of the card, in order to use an anisotropic conductive sheet 20, as engineering of temporary pressure bonding is required, improvement of many number of steps productivity is difficult. Further, since the anisotropic conductive sheet is expensive, it has been a factor of cost increase.
【０００９】また、図８に示す第２の従来例の製造方法
では以下に示す問題がある。図９は、図８のステップ４
で完成した製品のＢ部を拡大した図である。図９におい
て、加熱温度及び加圧圧力のわずかな変化によって、半
導体素子５が回路パターン２の導電性ペーストと熱可塑
性樹脂シート１５内に沈み込み、導電性ペーストの回路
パターン２が半導体素子５の端面１８に接触することが
ある。半導体素子５は、パッケージに入っていないチッ
プの状態であるので、端面１８にはシリコンの基板ある
いは電極が露出している。従って回路パターン２が前記
端面１８に接触すると、回路パターン２から、半導体素
子５の端面１８にリーク電流が流れ、完成品の非接触カ
ードが動作不能になったり、動作不良を生ずるおそれが
ある。本発明は上記の問題点を解決し、高品質で安価な
薄型の非接触ＩＣカードを高い生産性で製造する方法を
提供するものである。Further, the manufacturing method of the second conventional example shown in FIG. 8 has the following problems. FIG. 9 shows step 4 of FIG.
It is the figure which expanded the B section of the product completed by. In FIG. 9, the semiconductor element 5 sinks into the conductive paste of the circuit pattern 2 and the thermoplastic resin sheet 15 due to a slight change in the heating temperature and the pressurizing pressure, and the circuit pattern 2 of the conductive paste changes the semiconductor element 5 from the semiconductor element 5. It may contact the end surface 18. Since the semiconductor element 5 is in the state of a chip that is not contained in the package, the silicon substrate or electrode is exposed on the end face 18. Therefore, when the circuit pattern 2 comes into contact with the end surface 18, a leak current flows from the circuit pattern 2 to the end surface 18 of the semiconductor element 5, and the completed contactless card may become inoperable or malfunction. The present invention solves the above problems and provides a method of manufacturing a high-quality, inexpensive, thin contactless IC card with high productivity.
【００１０】[0010]
【課題を解決するための手段】本発明の熱可塑性樹脂基
板に半導体素子を取付ける方法は、半導体素子が取付け
られる熱可塑性樹脂基板の一方の面に導電性ペーストを
用いて、前記半導体素子に所定の高さをもって設けられ
た電極部に電気的に接続される回路パターンを形成する
工程、形成された回路パターンを硬化させる工程、前記
熱可塑性樹脂基板の前記回路パターンの形成面とは反対
の面の、前記半導体素子が取付けられるべき所定位置に
接着剤を塗布する工程、前記半導体素子を前記回路パタ
ーンの所定の位置に前記接着剤によって接着して取付け
る工程、及び前記半導体素子を取付けた前記熱可塑性樹
脂基板の両面にそれぞれ別の熱可塑性樹脂シートを載置
し、前記半導体素子が前記熱可塑性樹脂基板にめり込
み、前記電極部が前記熱可塑性樹脂基板を突き抜け前記
回路パターンに電気的に接触するように加熱しつつ加圧
する工程とを有することを特徴とする。加熱しつつ加圧
することにより、半導体素子は熱可塑性樹脂基板にめり
込み、その電極部は前記半導体素子が前記熱可塑性樹脂
基板にめり込み、前記電極部が前記熱可塑性樹脂基板を
突き抜け前記回路パターンに電気的に接触するように回
路パターンに接触する。半導体素子の端面と回路パター
ンとの間には熱可塑性樹脂基板が介在するので、半導体
素子の端面と回路パターンが接触することはない。According to the method of mounting a semiconductor element on a thermoplastic resin substrate of the present invention, the semiconductor element is attached.
Conductive paste on one side of the thermoplastic resin substrate
Provided on the semiconductor element with a predetermined height
A circuit pattern electrically connected to the electrode part
The step, the step of curing the formed circuit pattern,
Opposite to the surface where the circuit pattern of the thermoplastic resin substrate is formed
At the predetermined position on the surface of the
The step of applying an adhesive, the semiconductor element to the circuit pattern
Mounted in place with the adhesive described above
And the thermoplastic resin to which the semiconductor element is attached
Place different thermoplastic resin sheets on both sides of the oil substrate
The semiconductor element is embedded in the thermoplastic resin substrate.
The electrode part penetrates through the thermoplastic resin substrate.
Pressurize while heating to make electrical contact with the circuit pattern
And a step of performing. By applying pressure while heating , the semiconductor element sinks into the thermoplastic resin substrate, and the electrode portion of the semiconductor element is the thermoplastic resin.
Insert into the substrate, and the electrode part will attach the thermoplastic resin substrate.
Penetration to make contact with the circuit pattern so as to make electrical contact with the circuit pattern . Since the thermoplastic resin substrate is interposed between the end surface of the semiconductor element and the circuit pattern, the end surface of the semiconductor element and the circuit pattern do not come into contact with each other.
【００１１】他の観点の発明の熱可塑性樹脂基板に半導
体素子を取付ける方法は、半導体素子が取付けられる熱
可塑性樹脂基板上に導電性ペーストを用いて、前記半導
体素子に所定の高さをもって設けられた電極部に電気的
に接続される回路パターンを形成する工程、形成された
回路パターンを硬化させる工程、熱可塑性樹脂シート上
に接着剤を塗布し、半導体素子を前記接着剤によって前
記熱可塑性樹脂シート上の所定位置に取付ける工程、前
記半導体素子が取付けられた前記熱可塑性樹脂シート
を、前記熱可塑性樹脂基板の、前記半導体素子の電極部
に電気的に接続されるべき回路パターンに、前記半導体
素子の電極部が前記熱可塑性シートを介して対向するよ
うに位置合わせする工程、及び前記半導体素子と前記熱
可塑性シートを覆う別の熱可塑性樹脂シートを載置し、
前記半導体素子が前記熱可塑性樹脂基板にめり込み、前
記電極部が前記熱可塑性樹脂基板を突き抜け前記回路パ
ターンに電気的に接触するように加熱しつつ加圧する工
程とを有することを特徴とする。熱可塑性樹脂シートを
熱プレスすることにより、半導体素子は、前記他の熱可
塑性樹脂シートにめり込み、その電極部は回路パターン
に接続する。半導体素子の端面と回路パターンとの間に
は前記他の熱可塑性樹脂が介在するので、半導体素子の
端面と回路パターンが接触することはない。Another aspect of the invention is a semiconductor substrate for a thermoplastic resin substrate .
Method of attaching the body element, the heat the semiconductor element is mounted
Using a conductive paste on a plastic resin substrate,
The body part is electrically connected to the electrode part with a certain height.
Forming a circuit pattern to be connected to the
Step of curing the circuit pattern, on the thermoplastic resin sheet
Adhesive is applied to the semiconductor element and the semiconductor element is
Note: The process of mounting at the specified position on the thermoplastic resin sheet, before
The thermoplastic resin sheet to which the semiconductor element is attached
Is the electrode portion of the semiconductor element of the thermoplastic resin substrate.
The circuit pattern to be electrically connected to the semiconductor
The electrode parts of the element face each other via the thermoplastic sheet.
Aligning the semiconductor element and the heat
Place another thermoplastic resin sheet that covers the plastic sheet,
The semiconductor element is embedded in the thermoplastic resin substrate,
The electrode part penetrates the thermoplastic resin substrate and the circuit pattern
A process of applying pressure while heating so that it makes electrical contact with the turn.
It is characterized by having a distance . By heat-pressing the thermoplastic resin sheet, the semiconductor element is embedded in the other thermoplastic resin sheet, and its electrode portion is connected to the circuit pattern. Since the other thermoplastic resin is interposed between the end face of the semiconductor element and the circuit pattern, the end face of the semiconductor element and the circuit pattern do not come into contact with each other.
【００１２】さらに他の観点の発明の熱可塑性樹脂基板
に半導体素子を取付ける方法は、熱可塑性樹脂基板に半
導体素子を、前記半導体素子に所定の高さをもって設け
られた電極端子が熱可塑性樹脂基板の一方の面に対向す
るように載置し、前記半導体素子と熱可塑性樹脂基板を
加熱しつつ加圧して前記電極端子の先端部を、前記熱可
塑性樹脂基板を突き抜けて他方の面に露出させる工程、
前記熱可塑性樹脂基板の前記半導体素子の電極端子が露
出している面に、導電性ペーストを用いて半導体素子の
電極部に電気的に接続される回路パターンを形成する工
程、形成された回路パターンを硬化させる工程、及び前
記熱可塑性樹脂シートの両面にそれぞれ熱可塑性樹脂シ
ートを載置し、加熱しつつ加圧する工程とを有すること
を特徴とする。熱プレス後の前記熱可塑性樹脂シート
の、半導体素子の電極端子が露出している面に導電性ペ
ーストを用いて回路パターンを設ける。従って半導体素
子の端面と回路パターンの間には前記の熱可塑性樹脂が
介在し、両者が接触することはない。上記の各構成によ
れば、半導体素子の端面と回路パターンとが接触するこ
とのない高品質な半導体素子を取付けた熱可塑性樹脂基
板を安価にかつ高い生産性を保ちつつ製造することが可
能になる。A thermoplastic resin substrate according to another aspect of the invention
Method of mounting a semiconductor element on a thermoplastic resin substrate to half
Providing a conductor element on the semiconductor element with a predetermined height
The attached electrode terminal faces one surface of the thermoplastic resin substrate.
Place the semiconductor element and the thermoplastic resin substrate
While heating, pressurize the tip of the electrode terminal to
A step of penetrating the plastic resin substrate to expose it on the other surface,
The electrode terminals of the semiconductor element of the thermoplastic resin substrate are exposed.
Use a conductive paste on the exposed surface of the semiconductor element.
A process to form a circuit pattern that is electrically connected to the electrodes.
The step of curing the formed circuit pattern, and
On both sides of the thermoplastic resin sheet,
A step of placing a sheet and applying pressure while heating . A circuit pattern is provided using a conductive paste on the surface of the thermoplastic resin sheet after the hot pressing, where the electrode terminals of the semiconductor element are exposed. Therefore, the thermoplastic resin is interposed between the end face of the semiconductor element and the circuit pattern, and the two do not come into contact with each other. According to each of the above configurations, it is possible to manufacture a thermoplastic resin substrate on which a high-quality semiconductor element in which the end face of the semiconductor element and the circuit pattern are not in contact is attached at low cost while maintaining high productivity. Become.
【００１３】本発明の非接触ＩＣカードの製造方法は、
半導体素子が取り付けられる非接触ＩＣカードの熱可塑
性樹脂基板の一方の面に導電性ペーストを用いて、送受
信を行う為のアンテナコイルとなるコイルパターンと、
前記半導体素子に所定の高さをもって設けられた電極部
に電気的に接続される回路パターンとを印刷によって形
成する工程、印刷されたコイルパターンと回路パターン
を硬化させる工程、前記熱可塑性樹脂基板の前記回路パ
ターンの形成面とは反対の面の、前記半導体素子が取り
付けられるべき所定位置に接着剤を塗布する工程、前記
半導体素子を前記回路パターンの所定の位置に前記接着
剤によって接着して取り付ける工程、及び前記半導体素
子を取り付けた前記熱可塑性樹脂基板の両面にそれぞれ
別の熱可塑性樹脂シートを載置し、前記半導体素子が前
記熱可塑性樹脂基板にめり込み、前記電極部が前記熱可
塑性樹脂基板を突き抜け前記回路パターンに電気的に接
触するように加熱しつつ加圧する工程とを有することを
特徴とする。熱可塑性樹脂シートを熱プレスすることに
より、半導体素子は熱可塑性基板にめり込み、その電極
部は回路パターンに接触する。半導体素子の端面と回路
パターンとの間には熱可塑性基板が介在するので、半導
体素子の端面と回路パターンが接触することはない。The method of manufacturing the non-contact IC card of the present invention is
Thermoplastic of non-contact IC card to which semiconductor element is attached
Conductive paste is used on one surface of the flexible resin substrate
A coil pattern that serves as an antenna coil for communication,
Electrode part provided on the semiconductor element with a predetermined height
The circuit pattern that is electrically connected to the
Process, printed coil pattern and circuit pattern
Curing the resin, the circuit pattern of the thermoplastic resin substrate.
The semiconductor element on the side opposite to the surface on which the turn is formed
Applying an adhesive to a predetermined position to be attached, the above
Adhere the semiconductor element to the predetermined position of the circuit pattern
Adhesively attaching and attaching, and the semiconductor element
On each side of the thermoplastic resin substrate with the child attached
Place another thermoplastic resin sheet,
It is embedded in the thermoplastic resin substrate and
Penetrates through the plastic resin substrate and makes electrical contact with the circuit pattern.
And a step of pressurizing while heating so as to be touched . By heat-pressing the thermoplastic resin sheet, the semiconductor element sinks into the thermoplastic substrate, and its electrode portion comes into contact with the circuit pattern. Since the thermoplastic substrate is interposed between the end surface of the semiconductor element and the circuit pattern, the end surface of the semiconductor element and the circuit pattern do not come into contact with each other.
【００１４】他の観点の発明の非接触ＩＣカードの製造
方法は、半導体素子が取り付けられる非接触ＩＣカード
の熱可塑性樹脂基板上に導電性ペーストを用いて、送受
信を行う為のアンテナコイルとなるコイルパターンと、
前記半導体素子に所定の高さをもって設けられた電極部
に電気的に接続される回路パターンとを印刷して形成す
る工程、印刷されたコイルパターンと回路パターンを硬
化させる工程、熱可塑 性樹脂シート上に接着剤を塗布
し、半導体素子を前記接着剤によって前記熱可塑性樹脂
シート上の所定位置に取り付ける工程、前記半導体素子
が取り付けられた前記熱可塑性樹脂シートを、前記熱可
塑性樹脂基板の、前記半導体素子の電極部に電気的に接
続されるべき回路パターンに、前記半導体素子の電極部
が前記熱可塑性シートを介して対向するように位置合わ
せする工程、及び前記半導体素子と前記熱可塑性シート
を覆う別の熱可塑性樹脂シートを載置し、前記半導体素
子が前記熱可塑性樹脂基板にめり込み、前記電極部が前
記熱可塑性樹脂基板を突き抜け前記回路パターンに電気
的に接触するように加熱しつつ加圧する工程とを有する
ことを特徴とする。熱可塑性樹脂シートを熱プレスする
ことにより、半導体素子は、前記他の熱可塑性樹脂シー
トにめり込み、その電極部は回路パターンに接触する。
半導体素子の端面と回路パターンとの間には前記他の熱
可塑性樹脂が介在するので、半導体素子の端面と回路パ
ターンが接触することはない。According to another aspect of the invention, there is provided a non-contact IC card manufacturing method, in which a semiconductor element is mounted.
Send and receive using conductive paste on the thermoplastic resin substrate of
A coil pattern that serves as an antenna coil for communication,
Electrode part provided on the semiconductor element with a predetermined height
Printed circuit pattern that is electrically connected to
Process, harden the printed coil pattern and circuit pattern.
Process to make adhesive, apply adhesive on thermoplastic resin sheet
Then, the semiconductor element is bonded to the thermoplastic resin by the adhesive.
Attaching to a predetermined position on a sheet, the semiconductor element
The thermoplastic resin sheet on which the
Electrically contact the electrodes of the semiconductor element on the plastic resin substrate
The electrode pattern of the semiconductor element is added to the circuit pattern to be continued.
Aligned so that they face each other through the thermoplastic sheet
Process, and the semiconductor element and the thermoplastic sheet
Place another thermoplastic resin sheet covering the
And the electrode part is in front of the thermoplastic resin substrate.
Penetrate the thermoplastic resin substrate and apply electricity to the circuit pattern.
And a step of pressurizing while heating so as to be in constant contact with each other. By heat-pressing the thermoplastic resin sheet, the semiconductor element is embedded in the other thermoplastic resin sheet, and its electrode portion comes into contact with the circuit pattern.
Since the other thermoplastic resin is interposed between the end face of the semiconductor element and the circuit pattern, the end face of the semiconductor element and the circuit pattern do not come into contact with each other.
【００１５】さらに他の観点の発明の非接触ＩＣカード
の製造方法は、非接触ＩＣカードの熱可塑性樹脂基板に
半導体素子を、前記半導体素子に所定の高さをもって設
けられた電極端子が熱可塑性樹脂基板の一方の面に対向
するように載置し、前記半導体素子と熱可塑性樹脂基板
を加熱しつつ加圧して前記電極端子の先端部を、前記熱
可塑性樹脂基板を突き抜けて他方の面に露出させる工
程、前記熱可塑性樹脂基板の前記半導体素子の電極端子
が露出している面に、導電性ペーストを用いてアンテナ
コイルのコイルパターンと半導体素子の電極部に電気的
に接続される回路パターンを印刷する工程、印刷された
コイルパターンと回路パターンを硬化させる工程、及び
前記熱可塑性樹脂シートの両面にそれぞれ熱可塑性シー
トを載置し、加熱しつつ加圧する工程とを有することを
特徴とする。熱プレス後の前記熱可塑性樹脂シートの、
半導体素子の電極端子が露出している面に導電性ペース
トを用いてコイルパターンと回路パターンを設ける。従
って半導体素子の端面と回路パターンの間には前記の熱
可塑性樹脂が介在し、両者が接触することはない。上記
の各構成によれば、半導体素子の端面と回路パターンと
が接触することのない高品質な非接触ＩＣカードを安価
にかつ高い生産性を保ちつつ製造することが可能にな
る。According to another aspect of the invention, there is provided a method for manufacturing a non-contact IC card, wherein a thermoplastic resin substrate of the non-contact IC card is used.
Place the semiconductor element on the semiconductor element with a predetermined height.
The stripped electrode terminals face one surface of the thermoplastic resin substrate.
The semiconductor element and the thermoplastic resin substrate.
While heating, pressurize the tip of the electrode terminal to
Process that penetrates the plastic resin substrate and exposes it on the other surface
The electrode terminals of the semiconductor element of the thermoplastic resin substrate
The conductive paste is used on the exposed surface of the antenna.
Electrically connect the coil pattern of the coil and the electrode part of the semiconductor element.
Printed circuit pattern, which is connected to
Curing the coil pattern and the circuit pattern, and
Each side of the thermoplastic resin sheet has a thermoplastic sheet.
And a step of applying pressure while heating . Of the thermoplastic resin sheet after hot pressing,
A coil pattern and a circuit pattern are provided on the surface of the semiconductor element where the electrode terminals are exposed by using a conductive paste. Therefore, the thermoplastic resin is interposed between the end face of the semiconductor element and the circuit pattern, and the two do not come into contact with each other. According to each of the above configurations, it is possible to manufacture a high-quality non-contact IC card in which the end face of the semiconductor element and the circuit pattern do not come into contact with each other at low cost and with high productivity.
【００１６】本発明の半導体素子を取付けた熱可塑性樹
脂基板は、半導体素子が取付けられる熱可塑性樹脂基板
の一方の面に形成され、前記半導体素子に所定の高さを
もって設けられた各電極部が前記熱可塑性樹脂基板を突
き抜けて電気的に接続された回路パターン、前記熱可塑
性樹脂基板の回路パターンの形成面とは反対の面に、前
記回路パターンに各電極部が接続されるように加熱圧接
されてめり込んだ半導体素子、及び前記半導体素子を取
付けた熱可塑性樹脂基板の両面にそれぞれ載置され、加
熱しつつ圧接された熱可塑性樹脂シートを有する。本発
明の他の観点の半導体素子を取付けた熱可塑性樹脂基板
は、半導体素子が取付けられる熱可塑性樹脂基板の面に
形成され、前記半導体素子に所定の高さをもって設けら
れた各電極部が電気的に接続された回路パターン、前記
半導体素子の電極部を有する面と熱可塑性樹脂基板との
間に設けられ、前記電極部が突き抜けている熱可塑性樹
脂シート、及び前記熱可塑性樹脂シートの他方の面を、
前記熱可塑性樹脂基板の回路パターンを有する面に対向
させ、前記半導体素子と前記熱可塑性樹脂シートを覆っ
て載置し加熱圧接した他の熱可塑性樹脂シートを有す
る。本発明の半導体素子を取付けた熱可塑性樹脂基板
は、半導体素子が熱プレスにより熱可塑性樹脂基板の一
方の面に埋め込まれ、前記半導体素子に所定の高さをも
って設けられた電極部が熱可塑性樹脂基板を突き抜けて
他方の面に露出していることを特徴とする。 本発明の半
導体素子を取付けた熱可塑性樹脂基板は、半導体素子が
取付けられる熱可塑性樹脂基板の一方の面に形成され、
前記半導体素子に所定の高さをもって設けられた各電極
部が前記熱可塑性樹脂基板を突き抜けて電気的に接続さ
れた回路パターン、及び前記熱可塑性樹脂基板の回路パ
ターンの形成面とは反対の面に、前記回路パターンに各
電極部が接続されるように加熱しつつ加圧してめり込ん
だ半導体素子を有する。 The thermoplastic resin substrate to which the semiconductor element of the present invention is attached is formed on one surface of the thermoplastic resin substrate to which the semiconductor element is attached, and the semiconductor element is provided with a predetermined height.
Each electrode part provided with the protrusion of the thermoplastic resin substrate.
A circuit pattern which is electrically connected through the semiconductor chip, and a semiconductor which is heated and press- contacted with the surface of the thermoplastic resin substrate opposite to the surface on which the circuit pattern is formed so that each electrode portion is connected to the circuit pattern . An element and a thermoplastic resin sheet mounted on both sides of the thermoplastic resin substrate to which the semiconductor element is attached and pressed against each other while being heated. A thermoplastic resin substrate on which a semiconductor element according to another aspect of the present invention is attached is formed on a surface of the thermoplastic resin substrate on which the semiconductor element is attached, and is provided on the semiconductor element with a predetermined height.
Circuit patterns each electrode portion is electrically connected that, between the surface and the thermoplastic resin substrate having an electrode portion of the semiconductor element
A thermoplastic resin sheet provided between the electrode portions , and the other surface of the thermoplastic resin sheet,
Another thermoplastic resin sheet is placed so as to face the surface having the circuit pattern of the thermoplastic resin substrate, is placed while covering the semiconductor element and the thermoplastic resin sheet, and is heated and pressure-contacted. Thermoplastic resin substrate to which the semiconductor element of the present invention is attached
The semiconductor element is a thermoplastic resin substrate formed by hot pressing.
Embedded on one side, and the semiconductor element has a predetermined height.
The electrode part provided by penetrating through the thermoplastic resin substrate
It is characterized in that it is exposed on the other surface. Half of the invention
The thermoplastic resin substrate on which the conductor element is attached
It is formed on one surface of the thermoplastic resin substrate to be attached,
Each electrode provided on the semiconductor element with a predetermined height
Part penetrates the thermoplastic resin substrate and is electrically connected.
Circuit pattern and the circuit pattern of the thermoplastic resin substrate.
On the surface opposite to the surface on which the turns are formed,
While heating so that the electrodes are connected, pressurize and press
It has a semiconductor element.
【００１７】[0017]
【発明の実施の形態】以下、本発明の好適な実施例につ
いて図１から図５を参照して説明する。以下の各実施例
は本発明を具体化した例であって、本発明の技術範囲を
限定するものではない。図１ないし図５においては、そ
れぞれの構成の理解を容易にするために、各要素の図の
上下方向の寸法（厚さ）を左右方向の寸法より拡大して
示している。BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of the present invention will be described below with reference to FIGS. Each of the following examples is an example embodying the present invention and does not limit the technical scope of the present invention. 1 to 5, in order to facilitate understanding of the respective configurations, the vertical dimension (thickness) of each element in the drawings is shown to be larger than the horizontal dimension.
【００１８】《第１の実施例》
図１は、第１の実施例の非接触ＩＣカードの半導体素子
を取付けた熱可塑性樹脂基板の製造方法の各工程を示す
断面図である。図１のステップ１では、熱可塑性樹脂の
基板１の表面に導電性ペーストを用いアンテナコイルと
しての渦巻状のコイルパターン３、及び回路パターン２
を印刷する。基板１は、ポリエチレンテレフタレート、
塩化ビニル、ポリカーボネート、又はアクリロニトリル
ブタジエンスチレンで形成されており、その厚さは、ス
テップ３でこの基板１に取付ける半導体素子５の厚さと
電極６の高さの合計寸法以下にすることが望ましい。例
えば、前記合計寸法が０．０８ｍｍの場合、基板１は厚
さ０．０５ｍｍのものを用いる。導電性ペーストとして
は、銀ペーストが好適である。導電性ペーストの印刷
は、スクリーン印刷、オフセット印刷、グラビア印刷等
によって行われる。例えばスクリーン印刷の場合、１６
５メッシュ／インチ、乳剤厚１０μｍのマスクを用いて
導電性ペーストの厚さを３０μｍにする。図１及び以下
の各図において導電性ペーストの厚さは、基板１の厚さ
に対して拡大して示している。ステップ２では、ステッ
プ１で回路パターン２を形成した基板１の面とは反対側
の面の一部分に半導体素子を仮止めする為の接着剤４を
小山状に塗布する。接着剤４の塗布位置は、次のステッ
プ３で取付けられる半導体素子５の電極部６に接続され
る回路パターン２の存在する範囲内が望ましい。<< First Embodiment >> FIG. 1 is a cross-sectional view showing each step of a method for manufacturing a thermoplastic resin substrate on which a semiconductor element of a non-contact IC card of the first embodiment is attached. In step 1 of FIG. 1, a spiral-shaped coil pattern 3 as an antenna coil and a circuit pattern 2 are formed by using a conductive paste on the surface of a thermoplastic resin substrate 1.
To print. The substrate 1 is polyethylene terephthalate,
It is formed of vinyl chloride, polycarbonate, or acrylonitrile butadiene styrene, and its thickness is preferably equal to or less than the total size of the thickness of the semiconductor element 5 and the height of the electrode 6 attached to the substrate 1 in step 3. For example, when the total dimension is 0.08 mm, the substrate 1 having a thickness of 0.05 mm is used. Silver paste is suitable as the conductive paste. Printing of the conductive paste is performed by screen printing, offset printing, gravure printing, or the like. For example, in the case of screen printing, 16
The thickness of the conductive paste is set to 30 μm using a mask of 5 mesh / inch and emulsion thickness of 10 μm. In FIG. 1 and the following drawings, the thickness of the conductive paste is shown in an enlarged manner with respect to the thickness of the substrate 1. In step 2, an adhesive 4 for temporarily fixing the semiconductor element is applied in a small mountain shape on a part of the surface opposite to the surface of the substrate 1 on which the circuit pattern 2 is formed in step 1. The application position of the adhesive 4 is preferably within the range in which the circuit pattern 2 connected to the electrode portion 6 of the semiconductor element 5 attached in the next step 3 exists.
【００１９】ステップ３では、半導体素子５の電極部６
が基板１の回路パターン２と基板１をはさんで対向する
ように、半導体素子５を位置合わせし、、回路パターン
２の導電性ペーストと接着剤４を硬化させる。ステップ
４では、基板１の両面にそれぞれ熱可塑性樹脂シート７
及び８を配置し、金型９Ａ及び９Ｂによりはさんで加熱
しつつ加圧する加工法である熱プレスをする。熱プレス
するとき、電極部６が回路パターン２に接触するが、半
導体素子５の端面１８は回路パターンに接触しないよう
に、熱プレスの圧力や時間を制御する。熱可塑性樹脂シ
ート７、８には、ポリエチレンテレフタレート、塩化ビ
ニル、ポリカーボネート、又はアクリロニトリルブタジ
エンスチレンの厚さ０．１〜０．５ｍｍ程度のものが用
いられる。熱可塑性樹脂の基板１及び熱可塑性樹脂シー
ト７及び８の熱プレスを行なった結果、基板と熱可塑性
樹脂シート７及び８は一体化する。In step 3, the electrode portion 6 of the semiconductor element 5 is
The semiconductor element 5 is aligned so that the circuit pattern 2 of the substrate 1 and the substrate 1 are opposed to each other, and the conductive paste of the circuit pattern 2 and the adhesive 4 are cured. In step 4, the thermoplastic resin sheet 7 is formed on each side of the substrate 1.
And 8 are arranged, and hot pressing, which is a processing method of pressurizing while sandwiching between the molds 9A and 9B, is performed. When hot pressing, the pressure and time of hot pressing are controlled so that the electrode portion 6 contacts the circuit pattern 2 but the end surface 18 of the semiconductor element 5 does not contact the circuit pattern. For the thermoplastic resin sheets 7 and 8, polyethylene terephthalate, vinyl chloride, polycarbonate, or acrylonitrile butadiene styrene having a thickness of about 0.1 to 0.5 mm is used. As a result of hot pressing the thermoplastic resin substrate 1 and the thermoplastic resin sheets 7 and 8, the substrate and the thermoplastic resin sheets 7 and 8 are integrated.
【００２０】その結果、ステップ５に示すように、半導
体素子５の電極６は加圧力により、基板１を突き抜け、
導電性ペーストにより形成した回路パターン２に電気的
に接触して、非接触ＩＣカードの半導体素子を取付けた
熱可塑性樹脂基板が完成する。第１の実施例では、従来
例で用いた異方性導電シートを用いない為、大幅な生産
性の向上とコストダウンが可能となる。図２のステップ
５の図のＡ部の拡大断面図に示すように、半導体素子５
と回路パターン２の間のＣ部には、熱可塑性樹脂の基板
１の一部が介在している為、従来例の図９に示すよう
に、半導体素子５の端面１８と導電性ペーストの回路パ
ターン２との接触は起こらず、安定して良品が生産出来
る。As a result, as shown in step 5, the electrode 6 of the semiconductor element 5 penetrates the substrate 1 by the pressing force,
The thermoplastic resin substrate on which the semiconductor element of the non-contact IC card is attached is completed by making electrical contact with the circuit pattern 2 formed of the conductive paste. In the first embodiment, since the anisotropic conductive sheet used in the conventional example is not used, it is possible to greatly improve the productivity and reduce the cost. As shown in the enlarged cross-sectional view of the part A in the step 5 of FIG.
Since a part of the thermoplastic resin substrate 1 is present in the C portion between the circuit pattern 2 and the circuit pattern 2, as shown in FIG. 9 of the conventional example, the end face 18 of the semiconductor element 5 and the circuit of the conductive paste are formed. No contact with the pattern 2 occurs, and a good product can be stably produced.
【００２１】《第２の実施例》
次に、第２の実施例の非接触ＩＣカードの半導体素子を
取付けた熱可塑性樹脂基板の製造方法の各工程を図３の
断面図で示す。<Second Embodiment> Next, each step of the method for manufacturing a thermoplastic resin substrate on which a semiconductor element of a non-contact IC card of the second embodiment is attached is shown in a sectional view of FIG.
【００２２】図３において、ステップ１では、熱可塑性
樹脂の基板１の表面に導電性ペーストを用いてコイルパ
ターン３と回路パターン２を印刷する。基板１は、ポリ
エチレンテレフタレート、塩化ビニル、ポリカーボネー
ト、又はアクリロニトリルブタジエンスチレンで形成さ
れており、その厚さは、０．３ｍｍであるが、０．１〜
０．５ｍｍ程度のものを用いることができる。導電性ペ
ーストとしては、銀ペーストが好適である。導電性ペー
ストの印刷は、スクリーン印刷、オフセット印刷、グラ
ビア印刷等によって行われる。例えばスクリーン印刷で
は、１６５メッシュ／インチ、乳剤厚１０μｍのマスク
を用いて導電性ペーストの厚さを３０μｍとする。In FIG. 3, in step 1, the coil pattern 3 and the circuit pattern 2 are printed on the surface of the thermoplastic resin substrate 1 by using a conductive paste. The substrate 1 is made of polyethylene terephthalate, vinyl chloride, polycarbonate, or acrylonitrile butadiene styrene, and its thickness is 0.3 mm,
It is possible to use one having a thickness of about 0.5 mm. Silver paste is suitable as the conductive paste. Printing of the conductive paste is performed by screen printing, offset printing, gravure printing, or the like. For example, in screen printing, the thickness of the conductive paste is set to 30 μm using a mask of 165 mesh / inch and an emulsion thickness of 10 μm.
【００２３】ステップ２では、別の熱可塑性樹脂シート
１３上に半導体素子５の仮止め用接着剤４を塗布した
後、半導体素子５を取付ける。熱可塑性樹脂シート１３
の厚さは、基本的に半導体素子５の厚さと電極６の高さ
の合計寸法以下にすることが望ましい。例えば、前記合
計寸法が０．０８ｍｍの場合、熱可塑性樹脂シート１３
は厚み０．０５ｍｍのものを用いる。尚、仮止め用接着
剤は、使用してもしなくても良い。ステップ３では、ス
テップ２で形成した熱可塑性樹脂シート１３を半導体素
子５の電極６が、熱可塑性樹脂シート１３を介して、ス
テップ１で形成した回路パターン２の所定位置に対向す
るように基板１の上に配置する。導電性ペースト及び接
着剤を硬化した後、半導体素子５が搭載された面側に別
の熱可塑性樹脂シート１４を配置し、熱プレスを行う。
その結果、ステップ４に示すように、半導体素子５の電
極６が、熱可塑性樹脂シート１３を突き抜け、導電性ペ
ーストにより形成した回路パターン２と接触し、電気的
に導通して非接触ＩＣカードの半導体素子を取付けた熱
可塑性樹脂基板が完成する。In step 2, after the adhesive 4 for temporarily fixing the semiconductor element 5 is applied onto another thermoplastic resin sheet 13, the semiconductor element 5 is attached. Thermoplastic resin sheet 13
It is desirable that the thickness of is basically less than or equal to the total size of the thickness of the semiconductor element 5 and the height of the electrode 6. For example, when the total dimension is 0.08 mm, the thermoplastic resin sheet 13
Has a thickness of 0.05 mm. Incidentally, the temporary fixing adhesive may or may not be used. In step 3, the substrate 1 is formed so that the electrode 6 of the semiconductor element 5 faces the thermoplastic resin sheet 13 formed in step 2 at a predetermined position of the circuit pattern 2 formed in step 1 with the thermoplastic resin sheet 13 interposed therebetween. Place on top of. After the conductive paste and the adhesive are hardened, another thermoplastic resin sheet 14 is placed on the surface side on which the semiconductor element 5 is mounted, and hot pressing is performed.
As a result, as shown in step 4, the electrode 6 of the semiconductor element 5 penetrates through the thermoplastic resin sheet 13 and comes into contact with the circuit pattern 2 formed of the conductive paste, and is electrically conducted to make a contactless IC card . The thermoplastic resin substrate with the semiconductor element attached is completed.
【００２４】この第２の実施例では、前記の第１の実施
例と同様に、異方性導電シートを用いないため、大幅な
生産性の向上とコストダウンが可能となる。また、半導
体素子５と導電性ペーストにより形成した回路パターン
２の間には、熱可塑性樹脂が介在しているため、従来例
の図９に示すような半導体素子５の端面１８と導電性ペ
ーストとの接触は起こらず、安定して良品が生産出来
る。In the second embodiment, similarly to the first embodiment, since the anisotropic conductive sheet is not used, it is possible to greatly improve the productivity and reduce the cost. Further, since the thermoplastic resin is interposed between the semiconductor element 5 and the circuit pattern 2 formed of the conductive paste, the end face 18 of the semiconductor element 5 and the conductive paste as shown in FIG. No contact occurs and stable production of good products is possible.
【００２５】《第３の実施例》
次に、第３の実施例の非接触ＩＣカードの半導体素子を
取付けた熱可塑性樹脂基板の製造方法の工程を図４の断
面図で示す。図４のステップ１では、熱可塑性樹脂の基
板１の表面に電極端子６が接するように、半導体素子５
を配置する。その際、仮止め用接着剤４を使用しても良
い。基板１の厚さは、半導体素子５の厚さと電極６の高
さの合計寸法以下にすることが望ましい。例えば、合計
寸法が０．０８ｍｍの場合、熱可塑性樹脂の基板１は厚
さ０．０５ｍｍのものを用いる。ステップ２では、ステ
ップ１で基板１の表面に配置した半導体素子５を金型９
Ａ、９Ｂにより、熱プレスをする。その結果、ステップ
３に示すように、半導体素子５は熱プレスにより、基板
１の中に埋め込まれ、電極端子６が基板１の上面に露出
した状態となる。<< Third Embodiment >> Next, the steps of the method for manufacturing a thermoplastic resin substrate to which the semiconductor element of the non-contact IC card of the third embodiment is attached are shown in the sectional views of FIG. In step 1 of FIG. 4, the semiconductor element 5 is placed so that the electrode terminals 6 are in contact with the surface of the thermoplastic resin substrate 1.
To place. At that time, the temporary fixing adhesive 4 may be used. The thickness of the substrate 1 is preferably equal to or less than the total size of the thickness of the semiconductor element 5 and the height of the electrode 6. For example, when the total dimension is 0.08 mm, the substrate 1 made of thermoplastic resin has a thickness of 0.05 mm. In step 2, the semiconductor element 5 arranged on the surface of the substrate 1 in step 1 is transferred to the mold 9
Heat press with A and 9B. As a result, as shown in step 3, the semiconductor element 5 is embedded in the substrate 1 by hot pressing, and the electrode terminals 6 are exposed on the upper surface of the substrate 1.
【００２６】ステップ４では、電極端子６が露出した面
に、導電性ペーストにてコイルパターン３と回路パター
ン２を印刷し、硬化する。導電性ペーストとしては、銀
ペーストが好適である。導電性ペーストの印刷は、スク
リーン印刷やオフセット印刷やグラビア印刷等によって
行われる。例えばスクリーン印刷では、１６５メッシュ
／インチのマスクを介して導電ペーストの厚さを１０μ
ｍとする。図５に示すステップ５では、別の熱可塑性樹
脂シート２２、２３を半導体素子５が埋め込まれ、回路
パターンが形成された基板１の両面に配置し、金型９
Ａ、９Ｂによりはさんで、熱プレスをする。その結果、
ステップ６に示すように、半導体素子５の電極６と導電
性ペーストにより形成した回路パターン２が接触して電
気的に接続されて半導体素子を取付けた熱可塑性樹脂基
板が完成する。In step 4, the coil pattern 3 and the circuit pattern 2 are printed on the exposed surface of the electrode terminal 6 with a conductive paste and cured. Silver paste is suitable as the conductive paste. Printing of the conductive paste is performed by screen printing, offset printing, gravure printing, or the like. For example, in screen printing, the thickness of the conductive paste is set to 10 μm through a 165 mesh / inch mask.
m. In step 5 shown in FIG. 5, the other thermoplastic resin sheets 22 and 23 are arranged on both sides of the substrate 1 in which the semiconductor element 5 is embedded and the circuit pattern is formed, and the mold 9
It is sandwiched between A and 9B and heat pressed. as a result,
As shown in step 6, the electrode 6 of the semiconductor element 5 and the circuit pattern 2 formed of the conductive paste are in contact with each other and electrically connected to each other to complete the thermoplastic resin substrate to which the semiconductor element is attached.
【００２７】この第３の実施例では、第１の実施例及び
第２の実施例と同様、異方性導電シートを用いないの
で、半導体素子を取付けた熱可塑性樹脂基板の大幅な生
産性の向上とコストダウンが可能となる。また、半導体
素子５と回路パターン２の間には、基板１の熱可塑性樹
脂が介在している。従って従来例の図７に示すような、
半導体素子５の端面１８と導電性ペーストとの接触は起
こらず、安定して良品が生産出来る。In the third embodiment, as in the first and second embodiments, since the anisotropic conductive sheet is not used, the productivity of the thermoplastic resin substrate on which the semiconductor element is attached is greatly increased. Improvement and cost reduction are possible. The thermoplastic resin of the substrate 1 is interposed between the semiconductor element 5 and the circuit pattern 2. Therefore, as shown in FIG. 7 of the conventional example,
Contact between the end surface 18 of the semiconductor element 5 and the conductive paste does not occur, and a good product can be stably produced.
【００２８】[0028]
【発明の効果】以上の各実施例により詳細に説明したと
ころから明らかなように、本発明によれば、異方性導電
シートを用いないので、半導体素子を取付けた熱可塑性
樹脂基板の大幅な生産性の向上とコストダウンが可能と
なる。また、半導体素子の端面と導電性ペーストの回路
パターンとの間に、絶縁的である熱可塑性樹脂が介在す
るので、端面と回路パターンが接触することはない。従
って電流のリークが発生することもなく、安定して良品
が生産出来る。As will be apparent from the detailed description of the above embodiments, according to the present invention, since the anisotropic conductive sheet is not used, a large amount of the thermoplastic resin substrate on which the semiconductor element is mounted can be obtained. It is possible to improve productivity and reduce costs. Moreover, since the insulating thermoplastic resin is interposed between the end face of the semiconductor element and the circuit pattern of the conductive paste, the end face and the circuit pattern do not come into contact with each other. Therefore, a good product can be stably produced without current leakage.
【図１】本発明の第１実施例に係わる非接触ＩＣカード
の半導体素子を取付けた熱可塑性樹脂基板の製造方法の
各工程を示す断面図FIG. 1 is a cross-sectional view showing each step of a method for manufacturing a thermoplastic resin substrate on which a semiconductor element of a non-contact IC card according to a first embodiment of the present invention is attached.
【図２】本発明の第１実施例の製造方法で製造された半
導体素子と回路パターンの接合部の拡大断面図FIG. 2 is an enlarged cross-sectional view of a junction between a semiconductor element and a circuit pattern manufactured by the manufacturing method according to the first embodiment of the present invention.
【図３】本発明の第２実施例に係わる非接触ＩＣカード
の半導体素子を取付けた熱可塑性樹脂基板の製造方法の
各工程を示す断面図FIG. 3 is a cross-sectional view showing each step of a method of manufacturing a thermoplastic resin substrate on which a semiconductor element of a non-contact IC card according to a second embodiment of the present invention is attached.
【図４】本発明の第３実施例に係わる非接触ＩＣカード
の半導体素子を取付けた熱可塑性樹脂基板の製造方法の
前半の工程を示す断面図FIG. 4 is a cross-sectional view showing the first half of the method for manufacturing a thermoplastic resin substrate on which a semiconductor element of a non-contact IC card according to a third embodiment of the present invention is attached.
【図５】本発明の第３実施例に係わる非接触ＩＣカード
の半導体素子を取付けた熱可塑性樹脂基板の製造方法の
後半の工程を示す断面図FIG. 5 is a cross-sectional view showing the latter half of the method of manufacturing the thermoplastic resin substrate on which the semiconductor element of the non-contact IC card according to the third embodiment of the present invention is attached.
【図６】第１の従来例の非接触ＩＣカードの製造方法の
前半の工程を示す断面図FIG. 6 is a cross-sectional view showing the first half of the method of manufacturing the non-contact IC card of the first conventional example.
【図７】第１の従来例の非接触ＩＣカードの製造方法の
後半の工程を示す断面図FIG. 7 is a cross-sectional view showing a latter half of the method of manufacturing the non-contact IC card of the first conventional example.
【図８】第２の従来例の非接触ＩＣカードの製造方法の
各工程を示す断面図FIG. 8 is a cross-sectional view showing each step of a method for manufacturing a non-contact IC card of a second conventional example.
【図９】第２の従来の製造方法により製造した非接触Ｉ
Ｃカードの欠陥を示す断面図FIG. 9 is a non-contact type I manufactured by a second conventional manufacturing method.
Sectional drawing which shows the defect of C card
１ 基盤
２ 回路パターン
３ コイルパターン
４ 接着剤
５ 半導体素子
６ 電極部
７、８、１３、１４、２２、２３ 熱可塑性樹脂シー
ト
９Ａ、９Ｂ 金型
１８ 端面1 substrate 2 circuit pattern 3 coil pattern 4 adhesive 5 semiconductor element 6 electrode parts 7, 8, 13, 14, 22, 23 thermoplastic resin sheet 9A, 9B mold 18 end face
フロントページの続き (72)発明者 村上 慎司 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (72)発明者 原田 豊 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 平８−63567（ＪＰ，Ａ) 特開 平７−335992（ＪＰ，Ａ) 特開 平７−276866（ＪＰ，Ａ) 特開 平７−297522（ＪＰ，Ａ) 特開 平９−8179（ＪＰ，Ａ) 特開 平10−211784（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G06K 19/00 - 19/18 H01L 21/60 H05K 3/46 Front page continued (72) Inventor Shinji Murakami 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor, Yutaka Harada 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. (56 ) References JP-A-8-63567 (JP, A) JP-A-7-335992 (JP, A) JP-A-7-276866 (JP, A) JP-A-7-297522 (JP, A) JP-A-7-297522 (JP, A) 9-8179 (JP, A) JP-A-10-211784 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) G06K 19/00-19/18 H01L 21/60 H05K 3 / 46
Claims (10)
基板の一方の面に導電性ペーストを用いて、前記半導体
素子に所定の高さをもって設けられた電極部に電気的に
接続される回路パターンを形成する工程、 形成された回路パターンを硬化させる工程、 前記熱可塑性樹脂基板の前記回路パターンの形成面とは
反対の面の、前記半導体素子が取付けられるべき所定位
置に接着剤を塗布する工程、 前記半導体素子を前記回路パターンの所定の位置に前記
接着剤によって接着して取付ける工程、及び前記半導体
素子を取付けた前記熱可塑性樹脂基板の両面にそれぞれ
別の熱可塑性樹脂シートを載置し、前記半導体素子が前
記熱可塑性樹脂基板にめり込み、前記電極部が前記熱可
塑性樹脂基板を突き抜け前記回路パターンに電気的に接
触するように加熱しつつ加圧する工程を有することを特
徴とする熱可塑性樹脂基板に半導体素子を取付ける方
法。1. A circuit pattern electrically connected to an electrode portion provided at a predetermined height on the semiconductor element by using a conductive paste on one surface of a thermoplastic resin substrate to which the semiconductor element is attached. A step of forming, a step of curing the formed circuit pattern, a step of applying an adhesive to a predetermined position where the semiconductor element is to be attached on a surface of the thermoplastic resin substrate opposite to the surface on which the circuit pattern is formed, said semiconductor element is mounted process attaching adhered by the adhesive to a predetermined position, and separate the thermoplastic resin sheet on both surfaces of the thermoplastic resin substrate mounted with the semiconductor device of the circuit pattern, wherein Semiconductor element in front
It is embedded in the thermoplastic resin substrate and
Penetrates through the plastic resin substrate and makes electrical contact with the circuit pattern.
A method of mounting a semiconductor element on a thermoplastic resin substrate, which comprises a step of heating and pressing while touching .
基板上に導電性ペーストを用いて、前記半導体素子に所
定の高さをもって設けられた電極部に電気的に接続され
る回路パターンを形成する工程、 形成された回路パターンを硬化させる工程、 熱可塑性樹脂シート上に接着剤を塗布し、半導体素子を
前記接着剤によって前記熱可塑性樹脂シート上の所定位
置に取付ける工程、 前記半導体素子が取付けられた前記熱可塑性樹脂シート
を、前記熱可塑性樹脂基板の、前記半導体素子の電極部
に電気的に接続されるべき回路パターンに、前記半導体
素子の電極部が前記熱可塑性シートを介して対向するよ
うに位置合わせする工程、及び前記半導体素子と前記熱
可塑性シートを覆う別の熱可塑性樹脂シートを載置し、
前記半導体素子が前記熱可塑性樹脂基板にめり込み、前
記電極部が前記熱可塑 性樹脂基板を突き抜け前記回路パ
ターンに電気的に接触するように加熱しつつ加圧する工
程を有することを特徴とする熱可塑性樹脂基板に半導体
素子を取付ける方法。2. A semiconductor device is mounted on a thermoplastic resin substrate by using a conductive paste to attach the semiconductor device to the semiconductor device .
The step of forming a circuit pattern electrically connected to the electrode portion provided with a constant height, the step of curing the formed circuit pattern, the adhesive is applied on the thermoplastic resin sheet, Attaching the thermoplastic resin sheet at a predetermined position with an adhesive, electrically connecting the thermoplastic resin sheet to which the semiconductor element is attached to an electrode portion of the semiconductor element of the thermoplastic resin substrate To the circuit pattern to be arranged, the step of aligning the electrode portion of the semiconductor element so as to face through the thermoplastic sheet, and placing another thermoplastic resin sheet that covers the semiconductor element and the thermoplastic sheet,
The semiconductor element is embedded in the thermoplastic resin substrate,
The electrode part penetrates the thermoplastic resin substrate and the circuit pattern
A method of mounting a semiconductor element on a thermoplastic resin substrate, comprising the step of applying pressure while heating so as to make electrical contact with the turn .
半導体素子に所定の高さをもって設けられた電極端子が
熱可塑性樹脂基板の一方の面に対向するように載置し、
前記半導体素子と熱可塑性樹脂基板を加熱しつつ加圧し
て前記電極端子の先端部を、前記熱可塑性樹脂基板を突
き抜けて他方の面に露出させる工程、前記熱可塑性樹脂
基板の前記半導体素子の電極端子が露出している面に、
導電性ペーストを用いて半導体素子の電極部に電気的に
接続される回路パターンを形成する工程、 形成された回路パターンを硬化させる工程、及び前記熱
可塑性樹脂シートの両面にそれぞれ熱可塑性樹脂シート
を載置し、加熱しつつ加圧する工程を有することを特徴
とする熱可塑性樹脂基板に半導体素子を取付ける方法。3. A semiconductor device in the thermoplastic resin substrate, wherein
The semiconductor element is placed so that the electrode terminals provided with a predetermined height face one surface of the thermoplastic resin substrate,
The distal end portion of the semiconductor element and the thermoplastic resin substrate while heating pressurizes the electrode terminals, butt the thermoplastic resin substrate
Through the step of exposing through the other surface, the surface of the thermoplastic resin substrate where the electrode terminals of the semiconductor element are exposed,
A step of forming a circuit pattern electrically connected to the electrode portion of the semiconductor element using a conductive paste, a step of curing the formed circuit pattern, and a thermoplastic resin sheet on each side of the thermoplastic resin sheet. A method of mounting a semiconductor element on a thermoplastic resin substrate, which comprises a step of placing and pressing while heating.
カードの熱可塑性樹脂基板の一方の面に導電性ペースト
を用いて、送受信を行う為のアンテナコイルとなるコイ
ルパターンと、前記半導体素子に所定の高さをもって設
けられた電極部に電気的に接続される回路パターンとを
印刷によって形成する工程、 印刷されたコイルパターンと回路パターンを硬化させる
工程、 前記熱可塑性樹脂基板の前記回路パターンの形成面とは
反対の面の、前記半導体素子が取り付けられるべき所定
位置に接着剤を塗布する工程、 前記半導体素子を前記回路パターンの所定の位置に前記
接着剤によって接着して取り付ける工程、及び前記半導
体素子を取り付けた前記熱可塑性樹脂基板の両面にそれ
ぞれ別の熱可塑性樹脂シートを載置し、前記半導体素子
が前記熱可塑性樹脂基板にめり込み、前記電極部が前記
熱可塑性樹脂基板を突き抜け前記回路パターンに電気的
に接触するように加熱しつつ加圧する工程を有すること
を特徴とする非接触ＩＣカードの製造方法。4. A non-contact IC to which a semiconductor element is attached
A conductive paste is used on one surface of the thermoplastic resin substrate of the card, and a coil pattern that serves as an antenna coil for transmitting and receiving is provided on the semiconductor element with a predetermined height.
A step of forming a circuit pattern electrically connected to the scraped electrode portion by printing, a step of curing the printed coil pattern and the circuit pattern, and a surface opposite to the surface on which the circuit pattern of the thermoplastic resin substrate is formed. On the surface of the semiconductor element, the step of applying an adhesive to a predetermined position where the semiconductor element is to be attached, the step of attaching the semiconductor element to the predetermined position of the circuit pattern by the adhesive, and the step of attaching the semiconductor element Separate thermoplastic resin sheets are placed on both surfaces of the thermoplastic resin substrate to form the semiconductor element.
Goes into the thermoplastic resin substrate, and the electrode portion is
Penetrates through the thermoplastic resin board and electrically connects to the circuit pattern.
A method for manufacturing a non-contact IC card, comprising the step of applying pressure while heating so as to come into contact with the contactless IC card.
カードの熱可塑性樹脂基板上に導電性ペーストを用い
て、送受信を行う為のアンテナコイルとなるコイルパタ
ーンと、前記半導体素子に所定の高さをもって設けられ
た電極部に電気的に接続される回路パターンとを印刷し
て形成する工程、 印刷されたコイルパターンと回路パターンを硬化させる
工程、 熱可塑性樹脂シート上に接着剤を塗布し、半導体素子を
前記接着剤によって前記熱可塑性樹脂シート上の所定位
置に取り付ける工程、 前記半導体素子が取り付けられた前記熱可塑性樹脂シー
トを、前記熱可塑性樹脂基板の、前記半導体素子の電極
部に電気的に接続されるべき回路パターンに、前記半導
体素子の電極部が前記熱可塑性シートを介して対向する
ように位置合わせする工程、及び前記半導体素子と前記
熱可塑性シートを覆う別の熱可塑性樹脂シートを載置
し、前記半導体素子が前記熱可塑性樹脂基板にめり込
み、前記電極部が前記熱可塑性樹脂基板を突き抜け前記
回路パターンに電気的に接触するように加熱しつつ加圧
する工程を有することを特徴とする非接触ＩＣカードの
製造方法。5. A non-contact IC to which a semiconductor element is attached
A conductive paste is used on the thermoplastic resin substrate of the card, and a coil pattern that serves as an antenna coil for transmitting and receiving is provided on the semiconductor element with a predetermined height.
A step of printing a circuit pattern electrically connected to the electrode part, a step of curing the printed coil pattern and the circuit pattern, applying an adhesive on a thermoplastic resin sheet to form the semiconductor element Attaching to a predetermined position on the thermoplastic resin sheet with an adhesive; electrically connecting the thermoplastic resin sheet to which the semiconductor element is attached to an electrode portion of the semiconductor element of the thermoplastic resin substrate To the circuit pattern to be arranged, the step of aligning the electrode portion of the semiconductor element so as to face through the thermoplastic sheet, and placing another thermoplastic resin sheet that covers the semiconductor element and the thermoplastic sheet, The semiconductor element is embedded in the thermoplastic resin substrate.
The electrode part penetrates through the thermoplastic resin substrate.
A method for manufacturing a non-contact IC card, comprising the step of applying pressure while heating so as to make electrical contact with a circuit pattern .
半導体素子を、前記半導体素子に所定の高さをもって設
けられた電極端子が熱可塑性樹脂基板の一方の面に対向
するように載置し、前記半導体素子と熱可塑性樹脂基板
を加熱しつつ加圧して前記電極端子の先端部を、前記熱
可塑性樹脂基板を突き抜けて他方の面に露出させる工
程、 前記熱可塑性樹脂基板の前記半導体素子の電極端子が露
出している面に、導電性ペーストを用いてアンテナコイ
ルのコイルパターンと半導体素子の電極部に電気的に接
続される回路パターンを印刷する工程、 印刷されたコイルパターンと回路パターンを硬化させる
工程、及び前記熱可塑性樹脂シートの両面にそれぞれ熱
可塑性シートを載置し、加熱しつつ加圧する工程を有す
ることを特徴とする非接触ＩＣカードの製造方法。 6. A semiconductor element is provided on a thermoplastic resin substrate of a non-contact IC card, and the semiconductor element is provided at a predetermined height.
The scraped electrode terminals are placed so as to face one surface of the thermoplastic resin substrate, and the semiconductor element and the thermoplastic resin substrate are heated and pressed so that the tip end portion of the electrode terminal is not covered with the thermoplastic resin. Step of penetrating the substrate and exposing it on the other surface, on the surface of the thermoplastic resin substrate where the electrode terminals of the semiconductor element are exposed, on the coil pattern of the antenna coil and the electrode portion of the semiconductor element using a conductive paste. A step of printing a circuit pattern to be electrically connected, a step of curing the printed coil pattern and the circuit pattern, and a step of placing thermoplastic sheets on both sides of the thermoplastic resin sheet and applying pressure while heating A method for manufacturing a non-contact IC card, comprising:
基板の一方の面に形成され、前記半導体素子に所定の高
さをもって設けられた各電極部が前記熱可塑 性樹脂基板
を突き抜けて電気的に接続された回路パターン、 前記熱可塑性樹脂基板の回路パターンの形成面とは反対
の面に、前記回路パターンに各電極部が接続されるよう
に加熱しつつ加圧してめり込んだ半導体素子、及び前記
半導体素子を取付けた熱可塑性樹脂基板の両面にそれぞ
れ載置され、加熱しつつ圧接された熱可塑性樹脂シート
を有する半導体素子を取付けた熱可塑性樹脂基板。7. A thermoplastic resin substrate to which a semiconductor element is attached is formed on one surface of the substrate and has a predetermined height.
Each of the electrode portions provided with a space is the thermoplastic resin substrate
A circuit pattern that is electrically connected through the circuit pattern, and is pressed into the surface of the thermoplastic resin substrate opposite to the surface where the circuit pattern is formed while heating and pressurizing so that each electrode portion is connected to the circuit pattern. A thermoplastic resin substrate having a semiconductor element and a semiconductor element having a thermoplastic resin sheet placed on both sides of the thermoplastic resin substrate having the semiconductor element mounted thereon and pressed against each other while being heated.
基板の面に形成され、前記半導体素子に所定の高さをも
って設けられた各電極部が電気的に接続された回路パタ
ーン、 前記半導体素子の電極部を有する面と熱可塑性樹脂基板
との間に設けられ、前記電極部が突き抜けている熱可塑
性樹脂シート、及び前記熱可塑性樹脂シートの他方の面
を、前記熱可塑性樹脂基板の回路パターンを有する面に
対向させ、前記半導体素子と前記熱可塑性樹脂シートを
覆って載置し加熱しつつ加圧した他の熱可塑性樹脂シー
トを有する半導体素子を取付けた熱可塑性樹脂基板。8. A semiconductor device having a predetermined height formed on the surface of a thermoplastic resin substrate to which the semiconductor device is attached.
A circuit pattern in which the respective electrode portions provided by the above are electrically connected, a surface having the electrode portion of the semiconductor element and a thermoplastic resin substrate
The thermoplastic resin sheet provided between the electrode portion and the other surface of the thermoplastic resin sheet is opposed to the surface having the circuit pattern of the thermoplastic resin substrate, and the semiconductor element and thermoplastic resin substrate mounted with the semiconductor device having the heat over the thermoplastic resin sheet is placed while heating the pressure was another thermoplastic resin sheet.
脂基板の一方の面に埋め込まれ、前記半導体素子に所定
の高さをもって設けられた電極部が熱可塑性樹脂基板を
突き抜けて他方の面に露出していることを特徴とする半
導体素子を取付けた熱可塑性樹脂基板。 9. A semiconductor element is made of a thermoplastic resin by hot pressing.
Embedded in one surface of the oil substrate, the semiconductor element has a predetermined
The electrode section with the height of the
Half characterized by being penetrated and exposed on the other side
Thermoplastic resin substrate with conductor elements attached.
脂基板の一方の面に形成され、前記半導体素子に所定の
高さをもって設けられた各電極部が前記熱可塑性樹脂基
板を突き抜けて電気的に接続された回路パターン、及び
前記熱可塑性樹脂基板の回路パターンの形成面とは反対
の面に、前記回路パターンに各電極部が接続されるよう
に加熱しつつ加圧してめり込んだ半導体素子、 を有する
半導体素子を取付けた熱可塑性樹脂基板。 10. A thermoplastic resin to which a semiconductor element is attached.
It is formed on one surface of the oil substrate and has a predetermined size on the semiconductor element.
Each of the electrodes provided with a height has the above-mentioned thermoplastic resin base.
Circuit pattern that is electrically connected through the board, and
Opposite to the circuit pattern forming surface of the thermoplastic resin substrate
So that each electrode part is connected to the circuit pattern on the surface of
Including a semiconductor element, the telescoped pressurized while heating to
Thermoplastic resin substrate with semiconductor element attached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02883299A JP3529657B2 (en) | 1999-02-05 | 1999-02-05 | Method of attaching semiconductor element to thermoplastic resin substrate, method of manufacturing non-contact IC card, and thermoplastic resin substrate having semiconductor element attached |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02883299A JP3529657B2 (en) | 1999-02-05 | 1999-02-05 | Method of attaching semiconductor element to thermoplastic resin substrate, method of manufacturing non-contact IC card, and thermoplastic resin substrate having semiconductor element attached |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000227952A JP2000227952A (en) | 2000-08-15 |
| JP3529657B2 true JP3529657B2 (en) | 2004-05-24 |
Family
ID=12259367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02883299A Expired - Fee Related JP3529657B2 (en) | 1999-02-05 | 1999-02-05 | Method of attaching semiconductor element to thermoplastic resin substrate, method of manufacturing non-contact IC card, and thermoplastic resin substrate having semiconductor element attached |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3529657B2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1204136B1 (en) | 1999-07-16 | 2009-08-19 | Panasonic Corporation | Method of fabricating a packaged semiconductor device |
| JP2002230498A (en) * | 2001-01-31 | 2002-08-16 | Toppan Forms Co Ltd | IC chip mounting method |
| JP4783991B2 (en) * | 2001-03-28 | 2011-09-28 | 大日本印刷株式会社 | IC module manufacturing method |
| JP3717899B2 (en) * | 2002-04-01 | 2005-11-16 | Ｎｅｃエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
| JP4602208B2 (en) * | 2004-12-15 | 2010-12-22 | 新光電気工業株式会社 | Electronic component mounting structure and manufacturing method thereof |
| CN108922959B (en) | 2013-03-28 | 2022-07-29 | 日亚化学工业株式会社 | Light emitting device and device using the same |
| JP5723497B2 (en) | 2013-03-28 | 2015-05-27 | 東芝ホクト電子株式会社 | Method for manufacturing light emitting device |
| WO2015083364A1 (en) | 2013-12-02 | 2015-06-11 | 東芝ホクト電子株式会社 | Light-emission device |
| WO2015083365A1 (en) | 2013-12-02 | 2015-06-11 | 東芝ホクト電子株式会社 | Light-emission device, and production method therefor |
| CN105518886A (en) | 2013-12-02 | 2016-04-20 | 东芝北斗电子株式会社 | Light-emitting unit, light-emitting device, and method for manufacturing light-emitting unit |
| JPWO2015146115A1 (en) | 2014-03-25 | 2017-04-13 | 東芝ホクト電子株式会社 | Light emitting device |
| CN106030839B (en) | 2014-09-26 | 2018-09-28 | 东芝北斗电子株式会社 | Light emitting module |
| WO2016047133A1 (en) | 2014-09-26 | 2016-03-31 | 東芝ホクト電子株式会社 | Light-emission module |
-
1999
- 1999-02-05 JP JP02883299A patent/JP3529657B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000227952A (en) | 2000-08-15 |
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