JP3536005B2 - Coating film forming apparatus and coating film forming method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating film forming apparatus for coating a resist film on a substrate, for example.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, a resist film is formed on a semiconductor wafer (hereinafter referred to as a wafer), a circuit pattern or the like is reduced by using a photo technique to expose the resist film, and the resist film is developed. , There is a series of steps called photolithography.

In this photolithography process,
With the miniaturization of circuit patterns, it has become important to precisely control the line width of resist patterns. The line width of such a resist pattern varies depending on various conditions such as conditions at the time of resist application.

For example, there is a spin coating method as one of the methods for applying a resist solution onto a wafer. In such a spin coating method, the centrifugal force becomes larger as the rotation speed of the wafer becomes higher, so that the film thickness becomes thinner and, as a result, the line width changes. Specifically, the film thickness depends on the rotation speed of the motor of the spin chuck, but also changes depending on the temperature and humidity of the atmosphere. Therefore, conventionally, for example, a resist film is formed using a test wafer once every few days, a target value of the rotation speed of the motor that determines the optimum film thickness is determined, and this is input and set in the device, and in the mass production process. The temperature and humidity of the atmosphere were controlled to be constant.

[0005]

By the way, in the conventional apparatus, as described above, the desired film thickness cannot be directly input to the apparatus, and the operator converts this into the rotational speed of the motor and inputs it.・ It was necessary to set.

However, with such a method,
Not only is the conversion cumbersome, but the operator's calculation may make it impossible to input an accurate rotation speed.
If an incorrect number of revolutions is set, the film thickness will deviate from the specified value during mass production, and depending on the degree, the line must be stopped and the test must be repeated. In such a case, not only stable processing cannot be performed, but also the test frequency is high, which causes a decrease in throughput.

The object of the present invention has been made in view of such circumstances, and the setting for obtaining a desired film thickness of a coating film can be easily and accurately performed. For example, a line of a resist pattern in a photolithography process can be set. An object of the present invention is to provide a coating film forming apparatus capable of precisely controlling the width.

In order to solve the above problems, according to a main aspect of the present invention, a substrate is held by a substrate holding unit which is rotated by a driving unit, the coating liquid is supplied to the substrate and the substrate is rotated, and the substrate is rotated. In a coating film forming apparatus for forming a coating film by diffusing the coating liquid by the centrifugal force of, a substrate rotation speed setting unit for setting the shake-off rotation speed of the coating liquid, the rotation speed setting unit, A target film thickness setting unit for setting the target film thickness of the coating film, and a shake-rotation speed-film thickness correlation storage unit that stores the correlation between the shake-off speed and the film thickness of the coating film obtained thereby. And applying the target film thickness set by the film thickness setting unit to the correlation stored in the shake-off speed-film thickness correlation storage unit, and based on this, the shake for obtaining the target film thickness. Calculation of rotation speed to calculate rotation speed Possess the door, further, the coating film formed
For measuring the thickness of the coating film formed by the device
Film thickness measuring device and measured by this film thickness measuring device
Based on the thickness of the coating film
Correlation output section to obtain the correlation of the coating film thickness
The correlation output unit has a plurality of cutoffs within a predetermined range.
The coating film is formed at various rotation speeds, and the coating film is formed at each rotation speed.
The correlation is obtained based on the thickness of the cloth film.
The film thickness setting unit is set to a rotation speed within the predetermined range.
The target film thickness is included in the range of the film thickness of the coating film obtained in
If it is not included, the correlation
In the output section, shift the range of the shake-off speed and repeat the
This is to ask for the correlation.

According to this structure, the number of rotations of the spin chuck can be set only by inputting and setting a desired resist film thickness. Further, in the present invention, it is noted that it is the rotation speed at the time of shake-off rather than the rotation speed at the time of diffusion of the resist solution that has the greatest influence on the formation of the film thickness. This shake-off rotation speed is set. As a result, the film thickness can be accurately controlled, and as a result, the line width of the resist pattern can be well controlled.

[0010]

According to such a configuration, the correlation between the shake-off rotation speed of the coating liquid and the film thickness can be obtained when the conditions are set before the mass production process, and the shake-off rotation speed can be set using this. Therefore, the shake-off rotation speed can be set regardless of the experience value of the operator or the like.

[0012]

According to this structure, since the correlation can be obtained only by performing the shake-off operation a plurality of times within a predetermined narrow condition-adjustment range, the condition-adjustment and the shake-off rotation speed can be set in a relatively short time. I can finish.

[0014]

According to this structure, when the desired film thickness is not included in the predetermined range, the correlation can be obtained again, and thereby the more accurate setting of the cut-off rotation speed is possible. It can be carried out. It is preferable that the shift amount in the range of the shake-off rotation speed is automatically calculated from the already obtained correlation.

According to a second main aspect of the present invention, when the coating liquid is supplied to the substrate, the substrate is rotated, and the coating liquid is diffused by the centrifugal force of the rotation to form a coating film, A method of setting a substrate rotation speed for setting a liquid rotation speed of a liquid, wherein a coating film is formed at a plurality of rotation speeds within a predetermined range based on a target film thickness that has been set. Correlation calculation step for obtaining the correlation between the shake-off rotation speed and the film thickness, a judgment step for judging whether the target film thickness is included in the range of the coating film obtained in this step, and this judgment step In, when it is determined that the target film thickness is included in the range, the target film thickness is applied to the correlation, and the shake rotation speed that can obtain the film thickness is calculated. Process and this judgment process
Then, it is determined that the target film thickness is not included in the range.
The range of the above-mentioned shake-off speed is different from the above range.
Surrounded by a circle to re-execute the correlation calculation step.
To do.

According to this structure, the rotation speed of the spin chuck can be set only by inputting and setting the desired resist film thickness. Further, in the present invention, it is noted that it is the rotation speed at the time of shake-off rather than the rotation speed at the time of diffusion of the resist solution that has the greatest influence on the formation of the film thickness. This shake-off rotation speed is set. As a result, the film thickness can be accurately controlled, and as a result, the line width of the resist pattern can be well controlled.

[0018]

According to such a configuration, the number of times of sampling the film thickness for obtaining the correlation can be reduced (the sampling range can be narrowed), and the turning-off rotational speed can be set more accurately. As a result, the condition setting step can be completed in a short time.

The other features and remarkable effects of the present invention will be clearly understood by those skilled in the art by considering the following embodiments of the present invention together with the accompanying drawings.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings.

As shown in FIG. 1, this coating and developing treatment system 101 carries wafers W into and out of the coating and developing treatment system 101 from the outside in units of, for example, 25 cassettes C, and transfers wafers W to and from the cassette C. A cassette station 102 for loading and unloading wafers, a processing station 103 in which various single-wafer processing apparatuses that perform a predetermined processing on the wafer W one by one in a coating and developing processing step are arranged in multiple stages, and this processing The interface unit 104 for transferring the wafer W to and from the exposure apparatus (not shown) provided adjacent to the station 103 is integrally connected.

In the cassette station 102, a positioning protrusion 105a on the cassette mounting table 105 which serves as a mounting portion.
A plurality of, for example, four cassettes C at the position
Are arranged in a line in the X direction (vertical direction in FIG. 1) with the entrances and exits thereof facing the processing station 103 side. And
The wafer carrier 110 that is movable in the cassette C arrangement direction (X direction) and in the wafer W arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C is the conveyance path 110a.
The cassettes C can be freely moved along, and each cassette C can be selectively accessed.

The wafer carrier 110 is also rotatable in the θ direction, and as will be described later, an alignment unit (ALIM) and extension belonging to the multi-stage unit section of the third processing unit group G3 on the processing station 103 side. The unit (EXT) is also accessible.

In the processing station 103, a main transfer device 120 is arranged at the center thereof, and various processing devices as units are arranged in a multi-tiered manner around one set or a plurality of sets to form a processing device group. is doing.
In this coating and developing treatment system 101, five processing device groups G1, G2, G3, G4 and G5 are arranged so that the first and second processing device groups G1 and G2 are coated and developing treatment system 101. The third processing unit group G3 is arranged adjacent to the cassette station 102, and the fourth processing unit group G4 is arranged adjacent to the interface unit 104. The illustrated fifth processing unit group G5 is arranged on the back side.

In the first processing apparatus group G1, as shown in FIG. 2, two spinner type processing apparatuses, for example, the resister shown in FIG. The coating device (COT) and the development processing device (DEV) are stacked in two stages in order from the bottom. Then, similarly to the first processing device group G1, the second processing device group G2
Also in the above, two spinner type processing devices, for example, a resist coating device (COT) and a development processing device (DEV) are stacked in two stages in order from the bottom.

In the third processing device group G3, as shown in FIG. 3, for example, a cooling processing device (COL) for performing a cooling process, a hydrophobic processing device (AD) for improving the fixability of the resist and the wafer W, An alignment device (ALIM) for aligning the wafer W, an extension device (EXT) for waiting the wafer W, a pre-baking device (PREBAKE) for heat treatment, and a post-baking device (PO).
BAKE) and Post Expo-Jar Bake Equipment (P
EB) and the like are stacked in eight stages. Fourth processing unit group G
In 4, cooling processing device (COL), extension cooling device (EXTCOL), extension device (EX
T), cooling processing device (COL), pre-baking device (PREBAKE), post-baking device (POBA)
KE) etc. are stacked in 8 layers.

In the interface section 104, as shown in FIG. 1, a peripheral exposure device 125 (WEE) is provided on the back side of the interface section 104.
However, the wafer carriers 126 are provided in the central portions. The wafer carrier 126 is configured so that it can be moved in the X direction, Z direction (vertical direction) and rotated in the θ direction, and is an extension device (which belongs to the fourth processing device group G4 on the processing station 103 side). EXT) and a wafer transfer table (not shown) on the side of the exposure apparatus (not shown) are also accessible.

Next, processing steps in the coating and developing processing system 101 configured as described above will be described.

In the coating and developing treatment system 101, the unprocessed wafers W accommodated in the cassette C are taken out by the wafer carrier 110 of the cassette station 102, and then the third treatment group G3 of the treatment station 103.
It is transported into the alignment device (ALIM) of and the position is adjusted. Then, the main carrier 120 is loaded from the opposite side, and the wafer W is aligned by the alignment device (ALIM).
It is carried out from inside and transported. Then, the wafer W is
Of the third treatment group G3 or the cooling treatment device (COL) of the fourth treatment group G4 and then the first treatment. Group G1
Alternatively, a photoresist film, that is, a photosensitive film is coated and formed by the resist coating apparatus (COT) of the second processing group G2.

After forming the photosensitive film, the prebaking apparatus (PR) of the third processing group G3 or the fourth processing group G4 is formed.
EBAKE) is performed to remove residual solvent from the photosensitive film on the wafer W by evaporation. Then, the fourth processing group G
After being cooled by the extension cooling device (EXTCOL) of No. 4, it is placed in the extension device (EXT) of the fourth processing group G4. Then, the wafer carrier 12
6 is loaded from the opposite side, and the wafer W is unloaded.

The carried-out wafer W is subjected to peripheral exposure processing with a width of, for example, 2 mm at the peripheral portion of the wafer by a peripheral exposure unit (WEE). The peripherally exposed wafers are sequentially stored in the buffer cassette (BUCR) by the second wafer carrier 126. After that, when a reception signal is output from an exposure device (not shown), the wafers stored in the buffer cassette (BUCR) are sequentially transferred to the exposure device by the wafer carrier 128.

When the exposure by this exposure apparatus is completed, the wafer W after the peripheral exposure processing is transferred to the main transfer apparatus 120 via the fourth processing unit group G4, contrary to the above. It is delivered to the post-exposure baking unit (PEB) by the main carrier 120. As a result, the wafer W is heat-treated and then cooled to a predetermined temperature by the cooling unit (COL).

Next, the wafer W is transferred to the main transfer device 120, and then transferred into the development processing device (DEV) of the first processing group G1 or the second processing group G2 and developed by the developing solution. After that, rinse the developer with a rinse solution,
The development process is completed.

Thereafter, the wafer W is unloaded from the development processing device (DEV) by the main transfer device 120. Then, the wafer W is processed by the third processing group G3 or the fourth processing group G4.
Of the third treatment group G3 after being heat-treated by the post-baking device (POBAKE) of the third treatment group G3 or the cooling treatment device of the fourth treatment group G4 (COL) and then cooled by the extension treatment device (EXT) of the third treatment group G3. Is placed inside. Then, the wafer carrier 110 is loaded from the opposite side and the wafer W
Is carried out, and the wafer W is carried into the cassette C for storing the processed wafers mounted on the cassette station 102.

According to the present invention, in the coating and developing treatment system 101 described above, as shown in FIG. 1, particularly, for example, the coating film formed on the wafer W for condition setting in the peripheral exposure device 125 (WEE) is used. It has an in-line film thickness measuring device 209 for detecting the film thickness.

4 and 5 show the peripheral exposure device 125.
3A and 3B are a side view and a plan view for explaining an example of (WEE) and a film thickness measuring device provided therein.

As shown in FIGS. 4 and 5, the XY stage 202 is provided at the bottom of the casing 201 of the peripheral exposure apparatus 125.
Are arranged. A rotation mechanism 203 is arranged on the XY stage 202. The rotation mechanism 203 rotatably holds the spin chuck 204 holding the wafer W. The wafer W is, for example, a vacuum suction mechanism (not shown).
Are adsorbed on the spin chuck 204. As a result, the wafer W can be moved in the X-Y directions within the peripheral exposure apparatus 125 and can be rotated in the θ direction.

An opening 205 for transferring the wafer W between the wafer carrier 126 and the spin chuck 204 in the housing 201 is provided on the front surface of the housing 201 (the surface facing the wafer carrier 126). Has been. The width of the opening 205 is wider than the wafer W, and the height of the opening 205 is higher than the height when the wafer W is placed on the wafer carrier 126.

At the rear portion of the ceiling in the housing 201 (rear side as viewed from the surface facing the wafer carrier 126), the wafer W is
An exposure mechanism 207 for performing a preliminary exposure process is arranged in the peripheral portion of the. Further, a sensor 208 for detecting the position of the wafer W is arranged next to the exposure mechanism 207. Further, on the opening 205 outside the housing 201, for example, an optical interference type film thickness measuring device 209 for measuring the film thickness of the resist film on the wafer W is arranged.

The image pickup result by the sensor 208 and the film thickness measurement result of the film thickness measuring device 209 are sent to the WEE controller 210. The control unit 210 controls the XY stage 202, the rotation mechanism 203, and the exposure mechanism 2 based on these imaging results and the like.
07 etc. are controlled.

The peripheral exposure device 125 thus configured
Then, when the wafer W is received from the wafer transfer body 126 on the spin chuck 204, the sensor 208 detects the outer peripheral position on the wafer W, moves the XY stage 202, rotates the wafer W, and rotates the wafer W. The position of the outer periphery of the substrate and the exposure mechanism 207 are adjusted. Positioning is not performed, but the position (the outer peripheral edge portion of the wafer W) is detected, and the positions of the exposure mechanism 207 and the edge of the wafer W are always the same. Then, while irradiating the peripheral portion of the wafer W with light from the exposure mechanism 207, the wafer W is rotated by the rotation mechanism 203.
Is rotated to preliminarily expose the entire periphery of the wafer W.

Further, when measuring the film thickness of the resist film on the wafer W, after the positioning is performed as described above, the wafer carrier 126 is moved from above the spin chuck 204 onto the wafer W.
To receive the wafer W through the opening 205 and the housing 20.
The film thickness measuring device 209 measures the film thickness on the wafer W while sending the film to the outside of 1.

Next, the structure of the resist coating apparatus (COT) for forming the resist film and the control system according to the present invention will be described with reference to FIG.

First, the processing portion will be described. In FIG. 6, reference numeral 301 denotes a spin chuck that is a substrate holding unit, and is configured to hold the wafer W horizontally by vacuum suction. Around the spin chuck 301,
A fixed cup 302 is provided so as to surround this.
An exhaust port 303 is provided on each of the side surface and the bottom surface of the fixed cup 302.
Also, a waste liquid port 304 is formed. Fixed cup 302
The upper surface opening is open when the resist solution is applied.

The spin chuck 301 is provided on the top of a drive shaft 305 which is a combination of a rotation shaft and a lifting shaft coaxially. The drive shaft 305 is rotated by a motor M1 via a transmission mechanism 306 including a pulley and a belt. It is configured so that it can be lifted and lowered by a lifting mechanism 307.

A resist solution nozzle 309 for dropping and supplying the resist solution to the center of the wafer W held by the spin chuck 301 is provided above the fixed cup 302. The arm (not shown) is configured to be movable between the upper side of the central portion of the wafer W and the lateral outer side of the fixed cup 302. The resist liquid nozzle 309 is connected to a resist liquid tank (not shown) via a resist liquid supply pipe (not shown), and a predetermined amount of resist liquid is discharged by pressurizing the inside of the resist liquid tank, for example.

Next, the detection / control system will be described. Figure 6
In the control section 311 (rotation speed setting section) shown in FIG. 3, only the configuration related to the gist of the present invention will be described. A film thickness input section 312 for inputting a target film thickness of a resist film and a film formation of a resist solution. Film-forming condition storage unit 313 for storing conditions
A condition setting range storage unit 314 that stores a range of shake-off rotational speeds for performing condition setting, a film thickness-shake-off speed correlation storage unit 315, and a film thickness provided in the peripheral exposure apparatus 125 (WEE). A measuring device 209 and a rotation speed control unit 316 for controlling the motor M1 are connected.

Further, the control unit 311 includes a condition determination rotation speed range determination unit 317, a correlation output unit 318 for calculating a film thickness-offset rotation speed correlation, and the target film thickness in the correlation range. Whether or not it exists in the correlation, and if it does not exist in the correlation, the determination unit 319 that executes the condition setting step again, and the shake-off rotation speed that obtains the target film thickness based on the correlation are calculated. The cut-off rotation speed calculation unit 320 is included.

Hereinafter, these configurations will be described in detail based on their functions.

The film-forming conditions stored in the film-forming condition storage unit 313 include at least the target film thickness M0 of the coating film and the rotation speed K0 of the spin chuck 301 when the resist solution is diffused.

The condition setting range storage unit 314, for example, adjusts the condition setting range within a relatively narrow range in accordance with the target film thickness M0 input / set through the film thickness input unit 312 (film thickness setting unit). Stores a table for determining the cutting speed range. This table defines the range of the shake-off rotation speed at which the predetermined target film thickness M0 can be obtained based on the empirical value. The range of the shake-off rotation speed is set to a narrow range of, for example, about 10 rpm. here,
This is because it takes time to set the conditions if a wide range is set.

Off-cut rotation speed-film thickness correlation storage unit 315
In the table, the shake-off speed-film thickness correlation obtained as a result of condition setting within the shake-off speed range is stored.
That is, the calculation of this correlation is performed using the wafer W for condition setting. Therefore, first, the condition setting process for the condition setting wafer will be described with reference to FIG.

First, the operator inputs a desired target film thickness M0 through the film thickness input section 312 (step S1). The condition setting range determination unit sets the upper and lower limit rotation speeds of the condition setting range according to the input target film thickness, and several rotation speeds in between, as the condition setting rotation speeds. (Step S2).

Then, the condition-exhibiting wafers are prepared by the number of revolutions, and steps S3 to S9 are repeated to obtain the film thickness data corresponding to the revolutions.

The steps S3 to S4 will be described. First, the wafer W is subjected to a hydrophobic treatment by the hydrophobic treatment device (AD) (step S3). After that, the wafer W that has been subjected to the hydrophobic treatment by the cooling processing unit (COL) is cooled (step S4). Next, when the wafer W is inserted into the resist coating apparatus (COT), the resist solution is coated on the cooled wafer W (step S).
5).

Next, the wafer W on which the resist has been formed is heat-treated by the baking device (POBAKE) (step S6), and then the wafer W which has been heat-treated by the cooling device (COL) is cooled (step S).
7).

Next, this wafer W is transferred to the wafer carrier 126.
Via the spin chuck 204 in the peripheral exposure device 125
The wafer W is placed on the wafer W, the wafer W is positioned by the XY stage 202 and the rotating mechanism 203 while the position of the wafer W is detected by the sensor 208, and the periphery of the wafer W is exposed (step S8). Then, while the wafer carrier 126 receives the wafer W from the spin chuck 204 and sends the wafer W to the outside of the housing 201 through the opening 205, the film thickness measuring device 209 measures the film thickness on the wafer W. Yes (step S9).

Next, in step S10, it is determined whether or not the condition setting step has been completed. Specifically, it is determined whether or not the film thickness measurement has been completed for all the rotation speeds set within the aforementioned condition-specified rotation speed range. If it is not completed, the shake-off rotation speed is changed in step S11, and the process is repeated in step S11.
3 to step S9 are executed. When the condition setting step is completed, the correlation between the shake-off rotation speed and the film thickness is calculated in step S12 based on the above film thickness measurement result.

This step will be specifically described with reference to FIGS.

In step S2, the condition-determining shake-off rotational speed range set according to the target film thickness M0 is RL (lower limit).
To RH (upper limit). In this case, including, for example, two rotation speeds (R1, R2) between the upper and lower limits, for example, four condition setting rotation speeds are set, and steps S3 to S9 are executed for each rotation speed. Measure the film thickness at that time.

Based on the result, a curve showing the correlation as shown by the solid line in the figure is obtained. Specifically, in a narrow range such as the conditional rotation speed range of this embodiment, the above-mentioned correlation is obtained as an approximation of the measured data to a quadratic curve. In this example, the upper limit number of revolutions and the lower limit number of revolutions obtained in the above-described condition-specified revolution number range are obtained as MH and ML, respectively. Such a correlation is
It is stored in the correlation storage unit 315.

Next, in step S13, it is determined whether or not the target film thickness M0 is included in the measured film thickness range. At this time, as shown in FIG. 8, when M0 is between MH and ML, it is determined to be “included”, and in step S14, as shown in FIG. The corresponding rotation speed R0 is obtained, and this is set as the shake-off rotation speed at which the film thickness M0 can be obtained.

On the other hand, as shown in FIG. 9, M0 is the above M
If it is not between H and ML, step S1
In step 5, the condition setting rotational speed range in which the M0 is supposed to be entered is reset, and steps S3 to S11 are executed again.

FIG. 10 shows the range of the rotational speed for condition setting as R
Shift from L to RH to RL 'to RH', and step S1
The correlation is obtained in 2. The shift amount of the condition setting range is preferably calculated based on the difference between the MH or ML and the M0, but it may be shifted upward or downward by a predetermined amount. If it is determined that M0 is included in the film thickness range MH 'to ML' obtained as a result of the re-measurement as described above (step S13), R0 obtained from this correlation is obtained.
Is set as the shake-off rotation speed (step S14).

According to the configuration described above, there is an effect that an appropriate shake-off rotation speed can be automatically set by inputting the target film thickness.

That is, in the conventional apparatus of this kind, the operator cannot directly input the film thickness to the apparatus, even though it is the film thickness of the resist film that needs to be set with high accuracy, and the rotation speed, etc. It was necessary to convert to other conditions and set the device. However, according to the above configuration, the rotation speed of the spin chuck can be set only by inputting and setting a desired resist film thickness.

Further, in the present invention, it is noted that it is the rotation speed at the time of shake-off rather than the rotation speed at the time of diffusion of the resist solution that has the greatest influence on the formation of the film thickness. The shake-off rotation speed is set according to. As a result, the film thickness can be accurately controlled, and as a result, the line width of the resist pattern can be well controlled.

Further, in the above-described embodiment, the shake-off operation is performed a plurality of times within a predetermined narrow range, and the condition is set again only when the desired target film thickness cannot be obtained within this range. It is possible to obtain the desired shake-off rotation speed in a relatively short time.

The present invention is not limited to the above-mentioned one embodiment, but can be variously modified without changing the gist of the invention.

For example, in the above-described embodiment, the measurement of the resist film thickness is performed in the peripheral exposure device, but the present invention is not limited to this, and the in-line film thickness measurement provided separately from the peripheral exposure device is performed. It may be performed by a device.

Further, in the above-mentioned one embodiment, the wafer has been described as an example of the substrate, but the substrate is not limited to this and may be a glass substrate for a liquid crystal display. Further, the coating liquid or coating film is not limited to the resist liquid or resist film.

Further, one film thickness-offset rotation speed correlation is created for each resist (for each resist type set in the liquid nozzle), and is stored in the film thickness-offset rotation speed correlation storage unit 315. It may be stored and associated with a plurality of COT process recipes for the resist (including the target film thickness, but the number of rotations of the cutoff is not determined). According to such a configuration, when forming a resist film based on the process recipe, it is not necessary to prepare a film thickness-offset correlation for each process recipe.

Further, the process recipe may include a setting as to whether or not the automatic correction of the shake-off rotation speed is executed.

[0075]

As described above, according to the present invention, it is possible to perform film thickness control with high accuracy regardless of fluctuations in atmospheric pressure.

[Brief description of drawings]

FIG. 1 is a plan view of a development coating processing system including a development processing apparatus according to an embodiment of the present invention.

FIG. 2 is a front view of the development coating processing system of FIG.

FIG. 3 is a rear view of the development coating processing system of FIG.

4 is a front view of the edge exposure apparatus shown in FIG.

5 is a plan view of the edge exposure apparatus of FIG.

FIG. 6 is a schematic configuration diagram showing an embodiment of a coating film forming apparatus and a control system according to the present invention.

FIG. 7 is a flowchart showing a condition setting step.

FIG. 8 is a diagram for explaining calculation of a correlation between film thickness and shake-off rotation speed.

FIG. 9 is a diagram for explaining calculation of a correlation between film thickness and shake-off rotation speed.

FIG. 10 is a diagram for explaining calculation of a correlation between film thickness and shake-off rotation speed.

[Explanation of symbols]

W ... Wafers G1 to G5 ... First to fifth processing device groups M1 ... Motor M0 ... Target film thickness 101 ... Coating / development processing system 102 ... Cassette station 103 ... Processing station 104 ... Interface section 105 ... Cassette mounting table 105a ... Projection 110 ... Wafer carrier 110a ... Carriage path 120 ... Main carrier 125 ... Peripheral exposure device 126 ... Wafer carrier 201 ... Housing 202 ... Y stage 203 ... Rotation mechanism 204 ... Spin chuck 205 ... Opening 207 ... Exposure mechanism 208 ... Sensor 209 ... Film thickness measuring device 210 ... WEE control unit 301 ... Spin chuck 302 ... Fixed cup 303 ... Exhaust port 304 ... Waste liquid port 305 ... Drive shaft 306 ... Transmission mechanism 307 ... Lifting mechanism 309 ... Resist solution nozzle 311 ... Control unit ( Substrate rotation speed setting unit) 312 ... Film thickness input unit (film thickness setting unit) 31 3 ... Film forming condition storage unit 314 ... Range storage unit 315 ... Film thickness-cutoff rotation speed correlation storage unit 316 ... Rotation speed control unit 317 ... Rotation speed range determination unit 318 ... Correlation output unit 319 ... Judgment unit 320 ... Vibration Cutting speed calculator

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI G03F 7/16 G03F 7/16 502 502 H01L 21/30 564C (72) Inventor Tadashi Tateyama 2655 Tsukyu, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Address: Tokyo Electron Kyushu Co., Ltd., Kumamoto Plant (72) Inventor Yoshiyuki Nakajima 2655 Tsukyu, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Address: Tokyo Electron Kyushu Corp., Kumamoto Plant (56) Reference JP-A-8-236430 (JP, A) JP-A-7-168362 (JP, A) JP-A-63-131517 (JP, A) JP-A-10-43666 (JP, A) JP-A-6-262125 (JP, A) JP-A-11 -251222 (JP, A) JP 10-328614 (JP, A) JP 4-346417 (JP, A) JP 2000-5687 (JP, A) JP 59-151424 (JP, A) JP 63- 70424 (JP, A) JP 63-42768 (JP, A) Actual development 5-85035 (JP, U) Actual development 61-15072 (JP, U) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/027 B05C 11/08 B05C 11/10 B05D 1/40 B05D 3/00 G03F 7/16 G03F 7/16 502

Claims (2)

(57) [Claims] 1. A substrate is held by a substrate holding unit that is rotated by a drive unit, the coating liquid is supplied to the substrate and the substrate is rotated, and the coating liquid is diffused by the centrifugal force of the rotation to form a coating film. The coating film forming apparatus has a substrate rotation speed setting unit for setting the shake-off rotation speed of the coating liquid, and the rotation speed setting unit is a target film thickness for setting the target film thickness of the coating film. A setting unit, a shake-off speed-film thickness correlation storing unit that stores the correlation between the shake-off speed and the film thickness of the coating film obtained thereby, and the target film thickness set by the film-thickness setting unit. the shaking-off rotational speed - is applied to a correlation relationship stored in thickness correlation storage portion, said possess a rotation number calculating section outright vibration calculates the rotational speed shaking-off to obtain a target film thickness based thereon further, formed by the coating film forming apparatus The coating film
Film thickness measuring device for measuring the film thickness of the coating film and the thickness of the coating film measured by this film thickness measuring device.
Based on the number of rotations and the thickness of the coating film obtained thereby
And a correlation output unit for obtaining a correlation , wherein the correlation output unit has a plurality of swing rotations within a predetermined range.
The number of coating films formed and the number of coating films formed at each rotation speed.
The film thickness setting unit obtains the correlation based on the film thickness , and the film thickness setting unit obtains the rotation speed within the predetermined range.
The target film thickness is included within the range of coating film thickness.
Determines Luke, if not included, the correlation output, the image blur
Shift the range of rotation speed and ask for the correlation again.
Coating film forming apparatus characterized in that that. 2. A setting rotation speed of the coating liquid when the coating liquid is supplied to the substrate, the substrate is rotated, and the coating liquid is diffused by a centrifugal force of the rotation to form a coating film. A substrate rotation speed setting method, in which a coating film is formed at a plurality of shake-off rotation speeds within a predetermined range based on the set target film thickness, and based on this, the correlation between the shake-off rotation speed and the film thickness is formed. A correlation calculating step of obtaining a relationship, a judging step of judging whether the target film thickness is included in the range of the coating film obtained in this step, and a target film thickness is included in the range in this judging step. If it is determined that, the target film thickness is applied to the correlation, and speed calculating step outright vibration determining the rotational speed outright vibration can obtain the thickness, in this determination step, the target film Thickness included in the above range
If it is determined that the
Re-execute the correlation calculation step with a different range from the above
A method for setting the number of revolutions, the method comprising: