JP3537732B2 - Ellipsometer using voltage controlled liquid crystal retarder - Google Patents
Ellipsometer using voltage controlled liquid crystal retarderInfo
- Publication number
- JP3537732B2 JP3537732B2 JP2000116038A JP2000116038A JP3537732B2 JP 3537732 B2 JP3537732 B2 JP 3537732B2 JP 2000116038 A JP2000116038 A JP 2000116038A JP 2000116038 A JP2000116038 A JP 2000116038A JP 3537732 B2 JP3537732 B2 JP 3537732B2
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- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal retarder
- voltage
- light
- retarder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Liquid Crystal (AREA)
- Polarising Elements (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電圧制御液晶リタ
ーダーを用いるエリプソメーターに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ellipsometer using a voltage-controlled liquid crystal retarder.
【0002】[0002]
【従来の技術】エリプソメーターは、既知の偏光状態の
光を試料表面に斜め入射して、反射光の偏光状態の変化
を測定する装置である。これを解析して、試料の複素屈
折率と膜厚を求める方法をエリプソメトリーと呼び、超
薄膜や固体表面の構造を高感度に測定する手段として、
100年以上の歴史を持つ。装置が比較的シンプルな構
成で、真空装置などにも組み込めるのでin−situ
測定にも有用で、利用範囲は極めて広い。2. Description of the Related Art An ellipsometer is a device for obliquely incident light of a known polarization state on a sample surface and measuring a change in the polarization state of reflected light. A method of analyzing this and calculating the complex refractive index and film thickness of the sample is called ellipsometry, and as a means for measuring the structure of ultra-thin films and solid surfaces with high sensitivity,
Has a history of over 100 years. The device has a relatively simple configuration and can be incorporated into vacuum equipment, etc.
It is also useful for measurement, and its use is extremely wide.
【0003】エリプソメーターによって実際に測定され
るのは、試料表面でのp成分とs成分の複素振幅反射率
rp とrs の比の実部(絶対値:tanΨ)と虚部(位
相:Δ)であり、通常は次のように定義されている。[0003] are actually determined by ellipsometer, the real part of the ratio of the complex amplitude reflectance r p and r s for p and s components at the surface of the sample (absolute value: tan) and imaginary part (position
Phase: Δ), which is usually defined as follows :
【0004】
ΨとΔは反射光の偏光状態を一義的に与える。しかしな
がら、これらから薄膜の厚さと複素屈折率を求めるには
計算が煩雑であり、これまでは解析に労力を要してい
た。[0004] Ψ and Δ uniquely give the polarization state of the reflected light. However, the calculation of the thickness and the complex refractive index of the thin film from these is complicated, and the analysis has been laborious until now.
【0005】しかしながら、最近の計算機の発達により
解析時間が大幅に短縮されたため、近年再び注目されて
いる。However, since the analysis time has been greatly shortened due to the recent development of computers, attention has been paid again in recent years.
【0006】[0006]
【発明が解決しようとする課題】エリプソメーターの構
造には、大きく分けて消光法と測光法の2つのタイプが
あり、構造はいずれも図4に示すようになっている。The structure of the error descriptor Someta INVENTION SUMMARY is], there are two main types of quenching methods and photometry separately, any structure is as shown in FIG.
【0007】図4はかかる従来のエリプソメーターの構
成を示す図である。[0007] FIG. 4 is a diagram showing a configuration of a conventional e descriptor Someta according.
【0008】この図において、Lは光源、Pは偏光子、
Sは試料、Cは補償板(1/4波長板)、Aは検光子、
Dは光検出器である。In this figure, L is a light source, P is a polarizer,
S is a sample, C is a compensator (1/4 wavelength plate), A is an analyzer,
D is a photodetector.
【0009】消光法では、各光学素子である偏光子P、
補償板(1/4波長板)C、検光子Aをそれぞれ交互に
回転して検出光強度がゼロになる点(消光位置という)
を探し、この時の各素子の方位角から複素反射率を求め
る。この場合、消光位置を探すのに時間がかかるが、精
度は極めて高い。In the extinction method, polarizers P, which are optical elements,
A point at which the intensity of the detected light becomes zero by alternately rotating the compensating plate (1/4 wavelength plate) C and the analyzer A (called an extinction position).
And complex reflectance is determined from the azimuth of each element at this time. In this case, it takes time to find the extinction position, but the accuracy is extremely high.
【0010】一方、測光法では、光学素子である偏光子
P、補償板(1/4波長板)C、検光子A(いずれでも
よい)をモーターなどで連続回転させて、光強度を測定
し、これをフーリエ解析することで複素反射率を求め
る。In the photometric method, on the other hand, the light intensity is measured by continuously rotating a polarizer P as an optical element, a compensator (a quarter-wave plate) C, and an analyzer A (whichever may be used) with a motor or the like. The complex reflectance is obtained by performing a Fourier analysis on this.
【0011】この場合、補償板(1/4波長板)Cは必
ずしも必要ではなく、そのため偏光子Pと検光子Aだけ
の構成でもって検光子Aを回転するものがよく用いられ
ている。測光法は、消光法に比べると、精度は劣るが時
間は短縮される。In this case, a compensating plate (1/4 wavelength plate) C is not always necessary, and therefore, a configuration in which only the polarizer P and the analyzer A rotate the analyzer A is often used. The photometric method is less accurate than the quenching method, but the time is shortened.
【0012】いずれの場合でも、現状では、手、あるい
はモーターを使って光学素子を機械的に回転させなけれ
ばならない。特に、消光法では、精度の高い実験を行お
うとする場合には、最低2つの素子を交互に回転して消
光位置を探すという面倒な作業を必要とするので、時間
的な問題に加えて、読み取り誤差も生じ易い。In any case, at present, the optical element must be mechanically rotated using a hand or a motor. In particular, in the quenching method, when performing a highly accurate experiment, it is necessary to perform a troublesome work of rotating at least two elements alternately and searching for the quenching position. Reading errors are also likely to occur.
【0013】本発明は、上記状況に鑑みて、短時間に簡
単に、しかも高精度に試料を測定することができる電圧
制御液晶リターダーを用いるエリプソメーターを提供す
ることを目的とする。The present invention has been made in view of the above circumstances, and has as its object to provide an ellipsometer using a voltage-controlled liquid crystal retarder that can easily and quickly measure a sample with high accuracy.
【0014】[0014]
【課題を解決するための手段】本発明は、上記目的を達
成するために、
〔1〕電圧制御液晶リターダーを用いるエリプソメータ
ーにおいて、試料からの反射光を入射させる第1の液晶
リターダーR1と、この第1の液晶リターダーR1から
の出力光を入射させる第2の液晶リターダーR2とを配
置し、前記第1の液晶リターダーR1にかける電圧のみ
を変化して最終光強度が最小となる値を求め、次に前記
第1の液晶リターダーR1の電圧をこの値に固定した状
態で前記第2の液晶リターダーR2にかかる電圧を変化
して最終光強度が最小となる値を求め、前記第1の液晶
リターダーR1の電圧から複素反射率比であるr p /r
s =tanΨexp(iΔ)の虚部Δ、前記第2の液晶
リターダーR2の電圧から前記複素反射率比の実部ta
nΨを独立に求めることを特徴とする。According to the present invention, there is provided an ellipsometer using a voltage-controlled liquid crystal retarder, comprising: a first liquid crystal retarder for receiving reflected light from a sample; A second liquid crystal retarder R2 for receiving the output light from the first liquid crystal retarder R1 is disposed, and only a voltage applied to the first liquid crystal retarder R1 is applied.
To obtain a value at which the final light intensity is minimized, and then
With the voltage of the first liquid crystal retarder R1 fixed at this value
Changes the voltage applied to the second liquid crystal retarder R2 in the state
Finally light intensity Me seek a value that is a minimum in a complex reflectance ratio from the voltage of the first liquid crystal retarder R1 r p / r
s = the imaginary part of tanΨexp (iΔ) Δ, the real part ta of voltage from the complex reflectance ratio of the second liquid crystal retarder R2
nΨ is independently obtained .
【0015】〔2〕電圧制御液晶リターダーを用いるエ
リプソメーターにおいて、光源と、この光源からの光を
通す偏光子と、この偏光子からの光を照射させる試料
と、この試料からの反射光を入射させる第1の液晶リタ
ーダーと、この第1の液晶リターダーからの出力光を入
射させる第2の液晶リターダーと、この第2の液晶リタ
ーダーからの光を入射させる検光子と、この検光子から
の光を入射させる光検出器とを具備するとともに、前記
第1の液晶リターダーにかける電圧のみを変化して最終
光強度が最小となる値を求め、次に前記第1の液晶リタ
ーダーの電圧をこの値に固定した状態で前記第2の液晶
リターダーにかかる電圧を変化して最終光強度が最小と
なる値を求め、前記第1の液晶リターダーの電圧から複
素反射率比であるr p /r s =tanΨexp(iΔ)
の虚部Δ、前記第2の液晶リターダ ーの電圧から前記複
素反射率比の実部tanΨを独立に求めることを特徴と
する。[2] In an ellipsometer using a voltage-controlled liquid crystal retarder, a light source, a polarizer that transmits light from the light source, a sample to be irradiated with light from the polarizer, and reflected light from the sample are incident on the ellipsometer. A first liquid crystal retarder, a second liquid crystal retarder for receiving output light from the first liquid crystal retarder, an analyzer for receiving light from the second liquid crystal retarder, and a light from the analyzer. as well as and a light detector to incident, the
Change only the voltage applied to the first liquid crystal retarder to final
A value that minimizes the light intensity is obtained, and then the first liquid crystal
The voltage of the second liquid crystal is fixed with the voltage of the
Change the voltage applied to the retarder to minimize the final light intensity
From the voltage of the first liquid crystal retarder.
The elementary reflectance ratio r p / r s = tanΨexp (iΔ)
Imaginary part delta, the double the voltage of the second liquid crystal retarder over the
It is characterized in that the real part tan の of the elementary reflectance ratio is obtained independently .
【0016】[0016]
【発明の実施の形態】以下、本発明の実施の形態を図を
参照しながら説明する。Embodiments of the present invention will be described below with reference to the drawings.
【0017】まず、電圧制御液晶リターダーについて説
明する。First, the voltage control liquid crystal retarder will be described.
【0018】電流制御回路によるRと1/Vの線形性獲
得
液晶リターダーの位相差を、完全に電圧制御するために
は、セルの電気容量の影響をとるために、電流制御回路
を組む必要がある。それには以下のようなパッシブ回路
かアクティブ回路を使う。Acquisition of R and 1 / V Linearity by Current Control Circuit In order to completely control the phase difference of the liquid crystal retarder by voltage, it is necessary to form a current control circuit in order to take the influence of the electric capacity of the cell. is there. It uses passive or active circuits such as:
【0019】(1)パッシブ回路
図2は本発明の実施例を示す液晶リターダーの回路図
(その1)である。(1) Passive Circuit FIG. 2 is a circuit diagram (part 1) of a liquid crystal retarder showing an embodiment of the present invention.
【0020】この図において、11は交流電圧源VIN、
12はインピーダンスZであり、ホモジニアス配向させ
たネマティック液晶セル5に直列に接続される。In this figure, reference numeral 11 denotes an AC voltage source V IN ,
Reference numeral 12 denotes an impedance Z, which is connected in series to the nematic liquid crystal cell 5 which is homogeneously aligned.
【0021】図2に示される回路において、インピーダ
ンスZ12の付加抵抗が液晶セル5のインピーダンス1
/iωCより十分大きい時、回路を流れる電流は、
となって、液晶セル5のキャパシタンスには左右されな
い。この時、液晶セル5にかかっているCVは、
で与えられることになり、他の物性に関係なく、電圧の
逆数だけで、CV、すなわち位相差Rが正確に制御でき
る。[0021] In the circuit shown in FIG. 2, the impedance additional resistance of the liquid crystal cell 5 of the impedance Z 12 1
When the current is sufficiently larger than / iωC, the current flowing through the circuit becomes Thus, it is not affected by the capacitance of the liquid crystal cell 5. At this time, the CV applied to the liquid crystal cell 5 is The CV, that is, the phase difference R can be accurately controlled only by the reciprocal of the voltage regardless of other physical properties.
【0022】(2)アクティブ回路
図3は本発明の実施例を示す液晶リターダーの回路図
(その2)である。(2) Active Circuit FIG. 3 is a circuit diagram (part 2) of a liquid crystal retarder showing an embodiment of the present invention.
【0023】この図において、交流電圧源21の一端に
は電圧制御ゲイン可変増幅器22が直列に接続され、そ
の電圧制御ゲイン可変増幅器22の出力に交流電流計2
3を接続し、その交流電流計23に液晶セル5を接続
し、その液晶セル5の他端を交流電圧源21の他端に接
続し、液晶セル5には電流Iを通電する。In this figure, a voltage control gain variable amplifier 22 is connected in series to one end of an AC voltage source 21, and the output of the voltage control gain variable amplifier 22 is connected to an AC ammeter 2.
3, the liquid crystal cell 5 is connected to the AC ammeter 23, the other end of the liquid crystal cell 5 is connected to the other end of the AC voltage source 21, and a current I is supplied to the liquid crystal cell 5.
【0024】一方、交流電流計23からの電流|I|
(絶対値)を割算器24、引算器25に加える。この引
算器25には制御電圧Vが目標値として設定され、その
引算器25の出力はPID回路26を介して電圧制御ゲ
イン可変増幅器22に帰還されるように構成されてい
る。On the other hand, the current | I |
(Absolute value) is added to the divider 24 and the subtractor 25. The control voltage V is set as a target value in the subtracter 25, and the output of the subtracter 25 is configured to be fed back to the variable voltage gain amplifier 22 via the PID circuit 26.
【0025】すると、液晶セル5には一定の電流Iが流
れる。つまり、制御電圧Vを目標値とした電圧V(位相
差Rに比例)が印加される。Then, a constant current I flows through the liquid crystal cell 5. That is, a voltage V (proportional to the phase difference R) with the control voltage V as a target value is applied.
【0026】したがって、図3で与えられる定電流回路
を利用すれば、より正確に電流一定でCVを決めること
ができ、液晶リターダーの位相差を制御することができ
る。Therefore, if the constant current circuit shown in FIG. 3 is used, the CV can be more accurately determined with a constant current, and the phase difference of the liquid crystal retarder can be controlled.
【0027】以下、本発明の実施例について説明する。Hereinafter, embodiments of the present invention will be described.
【0028】図1は本発明の実施例を示す電圧制御液晶
リターダーを用いたエリプソメーターの構成図である。FIG. 1 is a block diagram of an ellipsometer using a voltage controlled liquid crystal retarder according to an embodiment of the present invention.
【0029】この図において、Lは光源、Pは偏光子、
Sは試料、R1は第1の液晶リターダー、R2は第2の
液晶リターダー、Aは検光子、Dは光検出器である。In this figure, L is a light source, P is a polarizer,
S is a sample, R1 is a first liquid crystal retarder, R2 is a second liquid crystal retarder, A is an analyzer, and D is a photodetector.
【0030】この図に示すように、本発明では、図4に
示した従来のエリプソメーターの、決まった位相差を与
える補償板(1/4波長板)Cの1枚を通すかわりに、
本発明の電圧制御によって任意の位相差を与えることの
できる2枚の液晶リターダーR1,R2を用いる。As shown in this figure, in the present invention, instead of passing through one of the compensating plates (1/4 wavelength plates) C for giving a fixed phase difference, the conventional ellipsometer shown in FIG.
Two liquid crystal retarders R1 and R2 capable of giving an arbitrary phase difference by the voltage control of the present invention are used.
【0031】ここで、最初の偏光子Pの軸を入射面から
45度に、検光子Aの軸は入射面と垂直に第1の液晶リ
ターダーR1(リタデーションの大きさδ1 )の進相軸
は入射面と平行、同じく第2の液晶リターダーR2(リ
タデーションの大きさδ2 )の軸は45度に、それぞれ
固定する。この時、最終的に光検出器Dに到達する光強
度Iをδ1 で微分すると、
を得る。ここで、ρ=|rp |/|rs |=tanΨで
ある。適当なδ2 >0を与えておき、第1の液晶リター
ダーR1にかける電圧を変えていって光強度が最小にな
る点を求めると、(4)式よりこの時のδ1 はδ1 +Δ
=π/2を満たす。Here, the axis of the first polarizer P is at 45 degrees from the plane of incidence, and the axis of the analyzer A is the fast axis of the first liquid crystal retarder R1 (the retardation size δ 1 ) perpendicular to the plane of incidence. Is parallel to the plane of incidence, and the axis of the second liquid crystal retarder R2 (retardation magnitude δ 2 ) is fixed at 45 degrees. At this time, when the light intensity I that ultimately reaches the photodetector D is differentiated by [delta] 1, Get. Here, ρ = | r p | / | r s | = tanΨ. When an appropriate value of δ 2 > 0 is given and the point where the light intensity is minimized by changing the voltage applied to the first liquid crystal retarder R1 is obtained. From the equation (4), δ 1 at this time is δ 1 + Δ
= Π / 2.
【0032】本発明の電圧制御液晶リターダーを用いれ
ば、試料Sの位相差は、第1の液晶リターダーR1にか
ける電圧V 1IN のみで決まり、次の式で与えられる。When the voltage-controlled liquid crystal retarder of the present invention is used, the phase difference of the sample S is determined only by the voltage V 1IN applied to the first liquid crystal retarder R1, and is given by the following equation.
【0033】
ここで、Aは液晶リターダー固有の既知定数である。
(4),(5)式より、最終光強度を最小にするような
第1の液晶リターダーR1への印加電圧を求めると、そ
の値から第2の液晶リターダーR2によらず、試料Sの
位相差Δを一義的に得ることができる。[0033] Here, A is a known constant unique to the liquid crystal retarder.
When the voltage applied to the first liquid crystal retarder R1 that minimizes the final light intensity is obtained from the equations (4) and (5), the position of the sample S is determined from the value regardless of the second liquid crystal retarder R2. The phase difference Δ can be uniquely obtained.
【0034】以上のように、第1の液晶リターダーR1
のリタデーションを決定した時、最終光強度Iは次式で
与えられる。等号が成り立つのは明らかに
の時のみで、従って、光強度がゼロになるように第2の
液晶リターダーR2にかける電圧を決めれば、その値V
2IN から複素反射率比の実部が次のように求まる。As described above, the first liquid crystal retarder R1
When the retardation is determined, the final light intensity I is given by the following equation. Clearly the equality holds Therefore, if the voltage applied to the second liquid crystal retarder R2 is determined so that the light intensity becomes zero, the value V
The real part of the complex reflectance ratio is found as follows from 2I N.
【0035】 [0035]
【0036】
上記から明らかに、V 2IN のみから一義的にtanΨが
決定される。[0036] As is apparent from the above, tan Ψ is uniquely determined only from V 2 IN.
【0037】以上をまとめると、第1の液晶リターダー
R1と第2の液晶リターダーR2にかける電圧を独立に
変えて、最終光強度が最小になる値をそれぞれ求めれ
ば、第1の液晶リターダーR1の電圧から複素反射率比
の虚部、第2の液晶リターダーR2の電圧から複素反射
率比の実部が独立に求まる。Summarizing the above, the voltage applied to the first liquid crystal retarder R1 and the second liquid crystal retarder R2 are independently changed to obtain values that minimize the final light intensity. the imaginary part of the complex reflectance ratio <br/> from the voltage, the real part of the complex reflectance ratio is determined independently from the second voltage of the liquid crystal retarder R2.
【0038】(1)ここでは、第2の液晶リターダーR
2の進相軸をP面から+45度で設置した場合を考えた
が、45度以下でも構わない。(1) Here, the second liquid crystal retarder R
The case where the fast axis 2 is set at +45 degrees from the P plane is considered, but may be 45 degrees or less.
【0039】(2)ここでは、検光子AをS方向に設置
しているが、P方向に設置しても構わない。この場合は
(4)式の代わりに
を得るので、正のδ2 に対して光強度が最小になるδ1
を求めると、この時の試料の位相差は(5)式の代わり
に、
で与えられる。(2) Here, although the analyzer A is installed in the S direction, it may be installed in the P direction. In this case, instead of equation (4) Δ 1 that minimizes the light intensity for positive δ 2
Then, the phase difference of the sample at this time is expressed by the following equation instead of the equation (5). Given by
【0040】このようにδ1 を決めると、光強度は
(6)式の代わりに
となるので、光強度がゼロになるのは、δ2 が(7)式
の代わりに
を満たす時のみである。したがって、このようなδ2 を
与える第2の液晶リターダーR2への印加電圧から、複
素反射率比の実部は、(8)式の代わりに
When δ 1 is determined in this way, the light intensity becomes Therefore, the light intensity becomes zero because δ 2 is replaced by the equation (7). Only when is satisfied. Therefore, from the voltage applied to the second liquid crystal retarder R2 that gives δ 2 , the real part of the complex reflectance ratio becomes , instead of the equation (8),
【0041】 で与えられる。[0041] Given by
【0043】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、それらを本発明の範囲から排除するものではな
い。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications are possible based on the gist of the present invention, and they are not excluded from the scope of the present invention.
【0044】[0044]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、短時間に簡単に、しかも高精度に試料を測定す
ることができる電圧制御液晶リターダーを用いるエリプ
ソメーターを得ることができる。As described above in detail, according to the present invention, it is possible to obtain an ellipsometer using a voltage-controlled liquid crystal retarder that can easily and quickly measure a sample with high accuracy. .
【図1】本発明の実施例を示す電圧制御液晶リターダー
を用いたエリプソメーターの構成図である。FIG. 1 is a configuration diagram of an ellipsometer using a voltage controlled liquid crystal retarder according to an embodiment of the present invention.
【図2】本発明の実施例を示す液晶リターダーの回路図
(その1)である。FIG. 2 is a circuit diagram (No. 1) of a liquid crystal retarder showing an embodiment of the present invention.
【図3】本発明の実施例を示す液晶リターダーの回路図
(その2)である。FIG. 3 is a circuit diagram (part 2) of a liquid crystal retarder showing an embodiment of the present invention.
【図4】従来のエリプソメーターの構成を示す図であ
る。4 is a diagram showing a configuration of a conventional e descriptor Someta.
L 光源 P 偏光子 S 試料 R1 第1の液晶リターダー R2 第2の液晶リターダー A 検光子 D 光検出器 5 液晶セル 11,21 交流電圧源 12 インピーダンスZ 22 電圧制御ゲイン可変増幅器 23 交流電流計 24 割算器 25 引算器 26 PID回路 L light source P polarizer S sample R1 First liquid crystal retarder R2 Second liquid crystal retarder A Analyzer D Photodetector 5 Liquid crystal cell 11, 21 AC voltage source 12 Impedance Z 22 Variable voltage gain amplifier 23 AC ammeter 24 divider 25 Subtractor 26 PID circuit
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G01J 4/00 - 4/04 G01M 11/00 G01B 11/00 - 11/30 102 G01N 21/21 G02B 5/30 G02F 1/13 505 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) G01J 4/00-4/04 G01M 11/00 G01B 11/00-11/30 102 G01N 21/21 G02B 5 / 30 G02F 1/13 505
Claims (2)
ソメーターにおいて、 (a)試料からの反射光を入射させる第1の液晶リター
ダーと、 (b)該第1の液晶リターダーからの出力光を入射させ
る第2の液晶リターダーとを配置し、 (c)前記第1の液晶リターダーにかける電圧のみを変
化させ最終光強度が最小となる値を求め、次に前記第1
の液晶リターダーの電圧をこの値に固定した状態で前記
第2の液晶リターダーにかかる電圧を変化させて最終光
強度が最小となる値を求め、前記第1の液晶リターダー
の電圧から複素反射率比であるr p /r s =tanΨe
xp(iΔ)の虚部Δ、前記第2の液晶リターダーの電
圧から前記複素反射率比の実部tanΨを独立に求める
ことを特徴とする電圧制御液晶リターダーを用いるエリ
プソメーター。1. An ellipsometer using a voltage-controlled liquid crystal retarder, comprising: (a) a first liquid crystal retarder for entering reflected light from a sample; and (b) a first liquid crystal retarder for entering output light from the first liquid crystal retarder. a second liquid crystal retarder is arranged, varying only the voltage applied to the (c) said first liquid crystal retarder over
To obtain a value that minimizes the final light intensity.
With the liquid crystal retarder voltage of this
Me values final light intensity by changing the voltage of the second liquid crystal retarder is minimum calculated, the complex reflectance ratio from the voltage of the first liquid crystal retarder r p / r s = tanΨe
imaginary part delta, the second ellipsometer using a voltage controlled crystal retarder and obtaining from the voltage of the liquid crystal retarder independently real part tanΨ of the complex reflectance ratio of xp (i?).
ソメーターにおいて、 (a)光源と、 (b)該光源からの光を通す偏光子と、 (c)該偏光子からの光を照射させる試料と、 (d)該試料からの反射光を入射させる第1の液晶リタ
ーダーと、 (e)該第1の液晶リターダーからの出力光を入射させ
る第2の液晶リターダーと、 (f)該第2の液晶リターダーからの光を入射させる検
光子と、 (g)該検光子からの光を入射させる光検出器とを具備
するとともに、 (h)前記第1の液晶リターダーにかける電圧のみを変
化させ最終光強度が最小となる値を求め、次に前記第1
の液晶リターダーの電圧をこの値に固定した状態で前記
第2の液晶リターダーにかかる電圧を変化させて最終光
強度が最小となる値を求め、前記第1の液晶リターダー
の電圧から複素反射率比であるr p /r s =tanΨe
xp(iΔ)の虚部Δ、前記第2の液晶リターダーの電
圧から前記複素反射率比の実部tanΨを独立に求める
ことを特徴とする電圧制御液晶リターダーを用いるエリ
プソメーター。2. An ellipsometer using a voltage-controlled liquid crystal retarder, comprising: (a) a light source; (b) a polarizer for transmitting light from the light source; and (c) a sample for irradiating light from the polarizer. (D) a first liquid crystal retarder that causes reflected light from the sample to enter, (e) a second liquid crystal retarder that causes output light from the first liquid crystal retarder to enter, and (f) the second liquid crystal. (G) a photodetector for receiving light from the analyzer , and (h) changing only a voltage applied to the first liquid crystal retarder.
To obtain a value that minimizes the final light intensity.
With the liquid crystal retarder voltage of this
By changing the voltage applied to the second liquid crystal retarder, the final light
The value at which the intensity is minimized is determined, and the first liquid crystal retarder
From the complex reflectance ratio r p / r s = tan 比 e
xp (iΔ), the imaginary part Δ of the second liquid crystal retarder,
An ellipsometer using a voltage-controlled liquid crystal retarder, wherein a real part tan の of the complex reflectance ratio is independently determined from pressure .
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|---|---|---|---|
| JP2000116038A JP3537732B2 (en) | 2000-04-18 | 2000-04-18 | Ellipsometer using voltage controlled liquid crystal retarder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000116038A JP3537732B2 (en) | 2000-04-18 | 2000-04-18 | Ellipsometer using voltage controlled liquid crystal retarder |
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| Publication Number | Publication Date |
|---|---|
| JP2001296182A JP2001296182A (en) | 2001-10-26 |
| JP3537732B2 true JP3537732B2 (en) | 2004-06-14 |
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| JP2000116038A Expired - Fee Related JP3537732B2 (en) | 2000-04-18 | 2000-04-18 | Ellipsometer using voltage controlled liquid crystal retarder |
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|---|---|---|---|---|
| DE60209672T2 (en) * | 2002-10-15 | 2006-11-16 | Centre National De La Recherche Scientifique (C.N.R.S.) | Liquid crystal based polarimetric system, method for its calibration, and polarimetric measurement method |
| JP2007046943A (en) * | 2005-08-08 | 2007-02-22 | Tokyo Univ Of Agriculture & Technology | Observation apparatus, observation method, Faraday rotation angle measurement method, Faraday ellipticity measurement method, Kerr rotation angle measurement method, and Kerr ellipticity measurement method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956145A (en) | 1992-09-18 | 1999-09-21 | J. A. Woollam Co. Inc. | System and method for improving data acquisition capability in spectroscopic rotatable element, rotating element, modulation element, and other ellipsometer and polarimeter and the like systems |
-
2000
- 2000-04-18 JP JP2000116038A patent/JP3537732B2/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956145A (en) | 1992-09-18 | 1999-09-21 | J. A. Woollam Co. Inc. | System and method for improving data acquisition capability in spectroscopic rotatable element, rotating element, modulation element, and other ellipsometer and polarimeter and the like systems |
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