JP3540901B2 - Method of transferring flux to electrode and method of manufacturing bump - Google Patents
Method of transferring flux to electrode and method of manufacturing bump Download PDFInfo
- Publication number
- JP3540901B2 JP3540901B2 JP18100496A JP18100496A JP3540901B2 JP 3540901 B2 JP3540901 B2 JP 3540901B2 JP 18100496 A JP18100496 A JP 18100496A JP 18100496 A JP18100496 A JP 18100496A JP 3540901 B2 JP3540901 B2 JP 3540901B2
- Authority
- JP
- Japan
- Prior art keywords
- flux
- electrode
- substrate
- transfer
- ball
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3465—Application of solder
- H05K3/3478—Application of solder preforms; Transferring prefabricated solder patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3489—Composition of fluxes; Application thereof; Other processes of activating the contact surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
- H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は電極へのフラックス転写方法、低融点合金または金属よりなる微細バンプの製造方法に関するものである。
【0002】
【従来の技術】
携帯型情報機器や携帯ビデオカメラ等の普及に伴い、小型の半導体パッケージが求められている。LSIの高性能化に伴い電極数も増加傾向にある。このような小型でかつ多端子の実装を実現する方法としては、狭ピッチの基板電極に直接チップを搭載するフリップチップがある。また、端子の配置を周辺配置から面配置にすることにより、極端な狭ピッチ化をせず多端子化するBGA(ボールグリッドアレイ)やCSP(チップサイズパッケージ)が開発されている。
【0003】
上記のいずれの場合においても、半田等の低融点合金あるいは金属よりなる接続端子 (バンプ)を基板等の電極に形成する必要がある。半田等の低融点合金あるいは金属よりなるボールを用いてバンプを形成する方法は有力なバンプ形成法である。ボールよりバンプを形成する際には、電極との接合を十分確保するために電極にフラックスを転写しボールを仮固定した後、ボールをその融点以上の温度で加熱溶融して電極に接合させる必要がある。
【0004】
しかしながら、フラックスが電極以外の部分にも転写されていると、加熱溶融時にボールが電極から流れ落ちてしまうという問題があった。これは、電極部のみにフラックスを転写することで回避できる。すなわち、米国特許5,284,287明細書には以下の方法が開示されている。500〜700μm径の半田を配列基板で保持し、ボールを保持したまま配列基板をフラックスの充填されたフラックス浴上に移動し、配列基板を押し下げていきそこに保持したボールの一部分をフラックス中に浸し、そこにフラックスを付着させる。次に、フラックスを付着させたボールを配列基板から基板電極に押圧して仮固定する。したがって、フラックスはボールが仮固定されている電極のみへ供給されている。この仮固定したボールを加熱溶融しても電極からのボールの流れ落ちはない。
【0005】
【発明が解決しようとする課題】
上記の電極のみにフラックスを転写する方法は、ボールの直径が500μm未満になると困難になる。すなわち、ボールが小さくなるとボールを保持する配列基板とフラックスへ浸すボールの先端部分までの距離が短くなり、フラックス浴にボールを浸した時に配列基板にもフラックスが付着してしまうという問題がある。配列基板へのフラックスの付着は次回のボール保持の際に、その部分へのボールの付着の可能性があり電極へのバンプ形成の信頼性低下の原因となる。さらに、ボール径が小さくなるとボールの一部分のみに制御性良くフラックスを付着させるのが困難になってくる。すなわち、ボールにフラックスが付きすぎると、その粘着力によって配列基板からボールがフラックス浴中に脱落してしまう。
【0006】
本発明は、直径が500μm未満のボールで基板等の電極にバンプを形成する方法において、電極部のみに確実にフラックスを転写する方法、及びそれを用いたバンプの製造方法を提供するものである。
【0007】
【課題を解決するための手段】
上記課題を解決するために本発明は、半導体チップ、フィルムキャリア、あるいは基板の電極にフラックスを転写装置により転写する方法であって、この転写装置を構成する、弾性体よりなる平行化機構を付加した転写ヘッドに保持された転写基板は電極に対応する突起を有し、その転写基板の突起先端部分をフラックス浴に浸して、フラックスをその先端部に付着させ、しかる後、突起先端部と電極の位置合わせを行い、その後、転写対象の電極にそのフラックスを転写する方法を提供する。
また、本発明は上記の方法で電極にフラックスを転写し、しかる後、低融点合金または金属よりなる微細金属ボールを電極に対応させて配列基板に一括して保持し、しかる後、配列基板に保持した微細金属ボールとフラックスを転写した電極との位置合わせを行ってから、微細金属ボールをフラックスを転写した電極に押圧して一括仮固定し、しかる後、仮固定した微細金属ボールをその融点以上の温度で加熱溶融して電極に接合することを特徴とする電極上への低融点合金または金属よりなる微細金属バンプの製造方法を提供する。
【0008】
【発明の実施の形態】
本発明では基板電極に対応する突起を有する転写基板を使用する。前記転写基板の突起先端部をフラックス浴に浸し、フラックスを突起先端部に付着させ、その先端部と電極の位置を合わせた後、転写対象の電極にそのフラックスを転写する。
なお、本発明は500μm未満の径のボールを対象としたものであるが、それ以上の径のボール(例えば760μm)に対しても有効に適用することができる。
【0009】
突起の構造としては種々のものが考えられるが、その先端部分には電極を覆うのに必要かつ十分量のフラックスが付着する必要がある。したがって、突起先端付近の断面積は電極パッドと同等であるのが望ましい。また、フラックス浴に容易にその先端のみを浸すために、その高さは図1(a)に示すように200μm以上、望ましくは500μm以上が必要である。転写基板の突起先端部の形状は平坦であっても良いし曲率を持っても良い。
【0010】
フラックス転写基板の材質としては突起状構造が形成できれば何でも良く、ガラス等のセラミックス、ステンレス等の金属あるいはプラスチック等で作製できる。フラックスを転写する電極が形成されている対象は、半導体チップ、フィルムキャリアあるいは基板等である。ここで基板とはガラスエポキシ、ガラス、セラミックス等よりなるプリント基板あるいはポリイミド等よりなるフレキシブル基板等のいずれでも良い。微細バンプの材料としては種々の組成の半田や融点が400℃以下の、いわゆる、低融点合金あるいは金属が使用できる。
【0011】
本発明の上記転写方法を実現するために、以下の機構を用いることができる。
1.電極に対応した位置にフラックスを転写するための突起を有する転写基板。
2.フラックス浴に転写基板の突起の先端部分のみを浸す機構。
3.画像処理等によって転写基板の突起の先端部分と電極の位置を認識し、両者の位置を一致させる機構。
4.突起の先端部にフラックスを付着させた転写基板を、電極の位置に移動してフラックスを電極に転写する機構。
【0012】
ここで突起状12の転写基板11を保持する転写ヘッド61には、図2(a)に示すように弾性体62よりなる平行化機構を付け加える。この場合、基板等のフラックスを塗布すべき対象の平行度が悪くても、図2(b)に示すように転写ヘッド61で対象物63に対する平行度を取ることができ、均一な量のフラックスを塗布することができる。ここで弾性体はバネでも良いし、ゴムのような高分子材料等でも良い。
【0013】
また、何度もフラックスを塗布していると、転写基板11の突起12の先端部分にフラックスが固着してしまう場合がある。このような時は、フラックスを溶かす溶媒よりなる浴を設けておき、転写基板先端部分をそこに浸して固着フラックスを除去することができる。この際、溶媒に超音波を印加しておくと除去効率が高まる。
【0014】
【実施例】
本発明による電極部のみへのフラックス転写方法、ならびにこれを用いた微細バンプの製造方法について、図面に基づき詳細に説明する。
図1の(a)〜(j)は本発明による電極部分のみへのフラックス転写方法とそれを使用した半田バンプの製造方法を示している。転写対象のガラスエポキシよりなるプリント基板上には350ケの電極が形成されている。1つの電極パッドは50μm角の四角形よりなる。350ケの電極パッドは100μmピッチの間隔で形成されている。共晶半田ボール(Sn:60wt%、Pb:40wt%、融点188℃、直径45μm)を用いてバンプを製造する。
電極部分のみフラックスを転写するには基板電極と同じ位置に突起を有するフラックス転写基板を使用する。本実施例ではこのフラックス転写基板はガラスを用いて作製されている。突起構造は断面直径が50μmで高さが500μmの円柱状の形態をしている。
【0015】
以下に、図に示した順に電極へのフラックス転写方法と、その電極上への微細ボールバンプの製造方法を述べる。
(a)フラックス転写基板11をフラックス22を充填したフラックス浴21の上に移動させる。
(b)フラックス転写基板11をフラックス22に向かって下降させ、転写基板11の突起12の先端部のみをフラックス22に浸す。
(c)転写基板11を引き上げ突起12の先端部のみにフラックス23を付着させる。
(d)転写基板11を基板31の電極部32の上まで移動させ、突起12の先端部と電極パッド32の位置合わせを行う。
(e)転写基板11を電極32に向かって降下させ、電極パッド32にフラックス23を接触させる。
(f)先端に付着したフラックス23を電極パッド32に転写し、転写基板11を退避させる。
(g)共晶半田ボール51を電極に対応したボール径よりも小さい孔42が開けてある配列基板41で一括して吸引して保持した後、ボール51とフラックス24を転写した電極パッド32の位置を合わせる。
(h)配列基板41をプリント基板31に向かって下降させ、配列基板41でボール51を押圧する。
(i)ボール51をフラックス24の転写された電極に一括して仮固定し、配列基板41を退避させる。
(j)ボール51が電極32に仮固定された基板31を炉に搬送し、半田ボール51の融点以上の200℃で加熱溶融し、その後フラックスを洗浄すると、基板電極部分と十分に接合した微細な半田バンプ52を形成できる。
【0016】
【発明の効果】
以上、説明したように本発明によれば、フラックスを使用して500μm未満の微細金属ボールを電極に接合して微細バンプを製造する際に、配列基板へのフラックスの付着や配列基板からの微細金属ボールの脱落を防止できる。フラックスを確実に転写した電極上には、低融点合金あるいは金属よりなる微細金属ボールを使用して微細バンプを製造できる。このような微細バンプを接続させた半導体チップ、フィルムキャリア、あるいは基板を用いれば面積の極めて小さな電子部品を高い生産性で実装できる。
【図面の簡単な説明】
【図1】本発明のフラックスの転写工程((a)〜(f))とバンプ製造工程((g)〜(j))を模式的に示す図。
【図2】本発明の突起状の転写基板を保持する転写ヘッドの弾性体による平行化機構を示す図。
【符号の説明】
11:フラックス転写基板
12:突起構造
21:フラックス浴
22:フラックス
23:突起に付着したフラックス
24:電極に転写したフラックス
31:プリント基板
32:電極パッド
41:配列基板
42:吸着孔
51:低融点金属あるいは合金ボール
52:低融点金属あるいは合金バンプ
61:転写ヘッド
62:弾性体
63:フラックス塗布対象物[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates flux transfer method to the electrodes, the method for producing a fine bump made of a low melting point alloy or metal.
[0002]
[Prior art]
2. Description of the Related Art With the spread of portable information devices and portable video cameras, small semiconductor packages have been required. The number of electrodes tends to increase as the performance of LSIs increases. As a method of realizing such a small and multi-terminal mounting, there is a flip chip in which a chip is directly mounted on a substrate electrode having a narrow pitch. Also, a BGA (ball grid array) or a CSP (chip size package) has been developed in which the terminal arrangement is changed from the peripheral arrangement to the plane arrangement, thereby increasing the number of terminals without extremely narrowing the pitch.
[0003]
In any of the above cases, it is necessary to form a connection terminal (bump) made of a low melting point alloy such as solder or a metal on an electrode such as a substrate. A method of forming a bump using a ball made of a low melting point alloy such as solder or a metal is an effective bump forming method. When forming a bump from a ball, it is necessary to transfer flux to the electrode and temporarily fix the ball to ensure sufficient bonding with the electrode, and then heat and melt the ball at a temperature equal to or higher than its melting point to join the ball to the electrode There is.
[0004]
However, if the flux is transferred to a portion other than the electrode, there is a problem that the ball flows down from the electrode during heating and melting. This can be avoided by transferring the flux only to the electrode portion. That is, U.S. Pat. No. 5,284,287 discloses the following method. A solder having a diameter of 500 to 700 μm is held by an array substrate, and the array substrate is moved onto a flux bath filled with flux while holding the ball, and the array substrate is pushed down and a part of the ball held there is placed in the flux. Soak and apply flux to it. Next, the ball to which the flux is adhered is pressed from the array substrate to the substrate electrode, and is temporarily fixed. Therefore, the flux is supplied only to the electrode to which the ball is temporarily fixed. Even if the temporarily fixed ball is heated and melted, the ball does not flow down from the electrode.
[0005]
[Problems to be solved by the invention]
The method of transferring the flux only to the above electrodes becomes difficult when the diameter of the ball is less than 500 μm. In other words, as the size of the ball becomes smaller, the distance between the array substrate holding the ball and the tip of the ball immersed in the flux becomes shorter, and the flux adheres to the array substrate when the ball is immersed in the flux bath. The adhesion of the flux to the array substrate may cause the adhesion of the ball to that part at the time of the next ball holding, which causes a decrease in the reliability of the formation of the bump on the electrode. Further, when the ball diameter is small, it becomes difficult to adhere the flux to only a part of the ball with good controllability. That is, if the ball has too much flux, the ball will fall from the array substrate into the flux bath due to the adhesive force.
[0006]
The present invention is to provide a method of forming a bump on the electrode of the substrate or the like of the ball is less than 500μm in diameter, a method of transferring a reliably flux only in the electrode portion, and a method for manufacturing a bump using the same .
[0007]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the present invention is a method for transferring a flux to an electrode of a semiconductor chip, a film carrier, or a substrate by using a transfer device, wherein a parallelizing mechanism made of an elastic material is added to the transfer device. The transfer substrate held by the transferred transfer head has projections corresponding to the electrodes, and the tips of the projections of the transfer substrate are immersed in a flux bath to allow the flux to adhere to the tips, and thereafter, the tips of the projections and the electrodes And then transferring the flux to an electrode to be transferred.
In addition, the present invention transfers the flux to the electrodes by the above method, and thereafter, holds the fine metal balls made of a low melting point alloy or a metal collectively on the array substrate corresponding to the electrodes, and then transfers the flux to the array substrate. After aligning the held fine metal ball with the electrode to which the flux has been transferred, the fine metal ball is pressed against the electrode to which the flux has been transferred and temporarily fixed collectively, and then the temporarily fixed fine metal ball has its melting point. A method for producing a fine metal bump made of a low melting point alloy or a metal on an electrode, characterized by being heated and melted at the above temperature and joined to the electrode.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
In the present invention, a transfer substrate having a projection corresponding to the substrate electrode is used. The tip of the projection of the transfer substrate is immersed in a flux bath, the flux is adhered to the tip of the projection, the tip is aligned with the electrode, and then the flux is transferred to the electrode to be transferred.
The present invention is directed to a ball having a diameter of less than 500 μm, but can be effectively applied to a ball having a diameter larger than that (for example, 760 μm).
[0009]
Although various structures can be considered as the structure of the projection, a sufficient amount of flux necessary to cover the electrode needs to be attached to the tip portion. Therefore, it is desirable that the cross-sectional area near the tip of the protrusion is equal to that of the electrode pad. In addition, in order to easily immerse only the tip in the flux bath, the height must be 200 μm or more, preferably 500 μm or more, as shown in FIG. The shape of the projection tip of the transfer substrate may be flat or may have a curvature.
[0010]
Any material can be used as the material of the flux transfer substrate as long as it can form a protruding structure, and it can be made of ceramic such as glass, metal such as stainless steel, or plastic. The target on which the electrode for transferring the flux is formed is a semiconductor chip, a film carrier, a substrate, or the like. Here, the substrate may be a printed substrate made of glass epoxy, glass, ceramics, or the like, or a flexible substrate made of polyimide or the like. As the material for the fine bumps, solders of various compositions and so-called low melting point alloys or metals having a melting point of 400 ° C. or less can be used.
[0011]
To realize the above transfer method of the present invention, it is possible to use the following mechanism.
1. A transfer substrate having a projection for transferring flux to a position corresponding to an electrode.
2. A mechanism that immerses only the tips of the projections on the transfer substrate in a flux bath.
3. A mechanism that recognizes the positions of the tips of the protrusions of the transfer substrate and the electrodes by image processing and matches the positions of the electrodes.
4. A mechanism that transfers the flux to the electrode by moving the transfer substrate with the flux attached to the tip of the projection to the position of the electrode.
[0012]
Here, as shown in FIG. 2A, a parallelizing mechanism including an
[0013]
Further, if the flux is applied many times, the flux may adhere to the tip of the
[0014]
【Example】
A method for transferring a flux to only an electrode portion and a method for manufacturing a fine bump using the same according to the present invention will be described in detail with reference to the drawings.
1 (a) to 1 (j) show a method of transferring a flux to only an electrode portion and a method of manufacturing a solder bump using the same according to the present invention. On a printed board made of glass epoxy to be transferred, 350 electrodes are formed. One electrode pad has a square shape of 50 μm square. The 350 electrode pads are formed at intervals of 100 μm. Bumps are manufactured using eutectic solder balls (Sn: 60 wt%, Pb: 40 wt%, melting point: 188 ° C., diameter: 45 μm).
To transfer the flux only to the electrode portion, a flux transfer substrate having a protrusion at the same position as the substrate electrode is used. In this embodiment, the flux transfer substrate is manufactured using glass. The projection structure has a columnar shape with a cross-sectional diameter of 50 μm and a height of 500 μm.
[0015]
Hereinafter, a flux transfer method to the electrodes in the order shown, described a method for manufacturing a fine ball bumps to the electrode.
(A) The flux transfer substrate 11 is moved onto the
(B) The flux transfer substrate 11 is lowered toward the
(C) The transfer substrate 11 is pulled up and the
(D) The transfer substrate 11 is moved above the
(E) The transfer substrate 11 is lowered toward the
(F) The
(G) After the
(H) is lowered towards the arranged
(I) The
(J) the
[0016]
【The invention's effect】
As described above, according to the present invention, when a fine metal ball of less than 500 μm is bonded to an electrode using a flux to produce a fine bump, the adhesion of the flux to the array substrate and the fine Metal balls can be prevented from falling off. A fine bump can be manufactured on the electrode onto which the flux has been reliably transferred by using a fine metal ball made of a low melting point alloy or a metal. By using a semiconductor chip, a film carrier, or a substrate to which such fine bumps are connected, an electronic component having an extremely small area can be mounted with high productivity.
[Brief description of the drawings]
FIG. 1 is a view schematically showing a flux transfer step ((a) to (f)) and a bump manufacturing step ((g) to (j)) of the present invention.
FIG. 2 is a diagram illustrating a parallelizing mechanism using an elastic body of a transfer head that holds a projecting transfer substrate according to the present invention.
[Explanation of symbols]
11: Flux transfer substrate 12: Projection structure 21: Flux bath 22: Flux 23: Flux attached to projection 24: Flux transferred to electrode 31: Printed substrate 32: Electrode pad 41: Array substrate 42: Adsorption hole 51: Low melting point Metal or alloy ball 52: low melting point metal or alloy bump 61: transfer head 62: elastic body 63: flux coating target
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18100496A JP3540901B2 (en) | 1995-07-11 | 1996-07-10 | Method of transferring flux to electrode and method of manufacturing bump |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7-175218 | 1995-07-11 | ||
| JP17521895 | 1995-07-11 | ||
| JP18100496A JP3540901B2 (en) | 1995-07-11 | 1996-07-10 | Method of transferring flux to electrode and method of manufacturing bump |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004015031A Division JP2004119999A (en) | 1995-07-11 | 2004-01-23 | Flux transfer device and fine metal bump manufacturing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0982719A JPH0982719A (en) | 1997-03-28 |
| JP3540901B2 true JP3540901B2 (en) | 2004-07-07 |
Family
ID=26496550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18100496A Expired - Fee Related JP3540901B2 (en) | 1995-07-11 | 1996-07-10 | Method of transferring flux to electrode and method of manufacturing bump |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3540901B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW344092B (en) * | 1996-08-27 | 1998-11-01 | Nippon Steel Corp | Semiconductor device provided with low melting point metal bumps and process for producing same |
| US6239013B1 (en) * | 1998-02-19 | 2001-05-29 | Texas Instruments Incorporated | Method for transferring particles from an adhesive sheet to a substrate |
| KR100750048B1 (en) * | 2000-12-29 | 2007-08-16 | 앰코 테크놀로지 코리아 주식회사 | Solder Ball Bumping Method for Semiconductor Package Manufacturing |
| US8146793B2 (en) | 2005-04-19 | 2012-04-03 | Aurigin Technology Pte. Ltd. | Pins for transferring material |
| JP6013862B2 (en) * | 2012-10-10 | 2016-10-25 | Ntn株式会社 | Coating unit and coating device |
| JP6242122B2 (en) * | 2013-02-01 | 2017-12-06 | Ntn株式会社 | Coating unit, coating apparatus and coating method using the same |
| JP2019165175A (en) | 2018-03-20 | 2019-09-26 | 東芝メモリ株式会社 | Semiconductor fabrication apparatus and semiconductor fabrication method |
| US11850683B2 (en) * | 2020-03-27 | 2023-12-26 | S.S.P. Inc. | Flux tool using elastic pad |
| US11818850B2 (en) * | 2021-06-30 | 2023-11-14 | Samsung Electronics Co., Ltd. | Flux dotting tool |
-
1996
- 1996-07-10 JP JP18100496A patent/JP3540901B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0982719A (en) | 1997-03-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2589239B2 (en) | Thermosetting adhesive and electrical component assembly using the same | |
| US6150717A (en) | Direct die contact (DDC) semiconductor package | |
| KR20030092026A (en) | Flip chip interconnection using no-clean flux | |
| KR100592121B1 (en) | No-clean flux for flip chip assembly | |
| JP2001085470A (en) | Semiconductor device and manufacturing method thereof | |
| JP3540901B2 (en) | Method of transferring flux to electrode and method of manufacturing bump | |
| KR20020044577A (en) | Advanced flip-chip join package | |
| JP2001284382A (en) | Solder bump forming method, flip chip mounting method and mounting structure | |
| JP2002334906A (en) | Flip chip mounting method | |
| JP3477486B2 (en) | Manufacturing method of electronic component package | |
| KR100269032B1 (en) | Transfer of flux onto the electrode and production of bumps on electrodes | |
| JPH09246319A (en) | Flip chip mounting method | |
| JPH03187228A (en) | Formation of solder bump | |
| JP2004119999A (en) | Flux transfer device and fine metal bump manufacturing device | |
| JPH06168982A (en) | Flip chip mounting structure | |
| JPH0666355B2 (en) | Semiconductor device mounting body and mounting method thereof | |
| JPH05136201A (en) | Electrode for semiconductor device and mounting body | |
| JPH11186454A (en) | BGA type integrated circuit component, its manufacturing method and its mounting method | |
| JP2633745B2 (en) | Semiconductor device package | |
| JP2762958B2 (en) | Method of forming bump | |
| JPH11135552A (en) | Semiconductor device manufacturing method | |
| JPH0778847A (en) | Semiconductor chip mounting method | |
| JPH05102251A (en) | Tab tape, manufacture thereof and ic chip mounting method using said tab tape | |
| JPH1041351A (en) | Ceramic package with bump | |
| JP2000332060A (en) | Semiconductor device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20031125 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040123 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20040205 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040302 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040326 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090402 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090402 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100402 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110402 Year of fee payment: 7 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110402 Year of fee payment: 7 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120402 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130402 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130402 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140402 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |