JP3544907B2 - Magnetron sputtering equipment - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to the manufacture of various semiconductor devices, cutting tools, formation of hard films on wear-resistant parts, formation of corrosion-resistant films on corrosion-resistant parts, formation of decorative films on crafts and building materials, and formation of functional films on plastics and lenses. The present invention relates to a thin film forming apparatus for forming a thin film, and more particularly to a thin film forming apparatus for forming a film having higher density and higher crystallinity than conventional ones at high speed.
[0002]
[Prior art]
In recent years, in coating a hard coating on a cutting tool, a wear-resistant part, or a corrosion-resistant part, it has been desired to develop a technique for coating a large number of parts at a lower cost in order to reduce processing costs. In addition, when abrasion-resistant coatings or corrosion-resistant coatings are deposited, a film having higher adhesion, a denser and harder film is required, and a need for a device capable of forming a multi-element film with a highly controlled composition is increasing. ing.
[0003]
As a method of forming a ceramic-based hard thin film, electron beam heating vacuum evaporation or arc discharge evaporation is often used, but the former is difficult to deposit a multi-element film, and the latter is a method in which coarse particles called macroparticles are formed in the coating. There is a problem that the surface of the film is rough and inhomogeneous.
[0004]
On the other hand, in the sputtering method, ions such as Ar generated by glow discharge are made incident on a target surface, the target material is repelled by the energy, and transferred to the substrate surface. When a reaction product of a target material and an introduced gas is generated on the surface of a base material, it is called a reactive sputtering method, and is often used as a film forming apparatus in the field of semiconductors. Further, it is suitable for forming a film containing a plurality of metal elements such as TiAlN and TiCrN (hereinafter, referred to as a multi-element film).
[0005]
However, the sputtering method has a problem that the vapor deposition rate is slower than the electron beam heating vacuum vapor deposition method and the arc discharge vapor deposition method, so that the processing time is longer and the coating processing cost is higher. Had not been. However, efforts have also been made to increase the evaporation rate in the sputtering method, and magnetron sputtering in which a magnet is attached to the back of the target is now generally used. For example, it is disclosed in JP-A-10-152774, JP-A-10-8246, JP-A-10-46330, JP-A-3-79760, etc., and is used in a manufacturing process of a semiconductor or a magnetic recording medium. .
[0006]
[Problems to be solved by the invention]
However, magnetron sputtering still has the problem that the average energy of the sputtered particles is low, so that the adhesion strength of the film to the base material is low and the film density is low. Further, there is a problem that the deposition rate is lower than those of the above two methods, and the control range of the film quality is narrow because the ion current to be incident on the substrate is small. In addition, it has been difficult to perform advanced composition control and high-speed film formation in multi-element film deposition. Further, there is a problem that the sputtering particles are scattered in the film forming chamber and maintenance is troublesome.
[0007]
SUMMARY OF THE INVENTION In view of the conventional problems, the object of the present invention is to increase the deposition rate based on the magnetron sputtering method, to form a multi-element thin film at a high speed, to flexibly control the composition of the film, and to obtain a dense multi-element film. Magnetron that can easily coat thin films at high speed and is easy to maintainSpatterIt is to provide a device.
[0008]
[Means for Solving the Problems]
In order to solve this problem, the present inventors evaporated a target material by a sputtering method, and examined the number of evaporated atoms and the distribution of kinetic energy. NormalSpatterIn the ring phenomenon, inert gas ions such as argon are incident on the target surface almost perpendicularly, and as a result, multiple collisions occur between the incident ions and target atoms on the target surface, whereby the target atoms are repelled from the surface. At that time, it is known that particles having higher energy fly out in the direction of flight of the target atoms in an oblique direction than the direction perpendicular to the target surface. As a result of a more detailed investigation, the present inventors have found that as shown in FIG. 1, many particles fly in the angles of 20 ° to 75 ° and 110 ° to 165 ° between the substrate to be formed and the target surface. In particular, when the thickness is in the range of 25 ° to 65 ° and in the range of 115 ° to 155 °, the film thickness increases, and it has been found that the film in this range is dense and has a high film height. Further, it has been found that, when practically applied, the angle is preferably 20 to 80 degrees in consideration of the size of the work. In addition, the present inventors can control the film formation rate, thickness, denseness, and the like of the film by devising the arrangement of the base material and the target surface. It has been found that the particles can be stably controlled by obliquely concentrating the particle direction by arranging them in opposition.
[0009]
According to this knowledge, in the present invention, in a magnetron sputtering apparatus for evaporating a target material fixed to a target electrode by sputtering to form a film on the surface of a base material, a target composed of a target electrode and a target material is formed as a pair. 2. The target and the support so that a plane connecting the support and the target (hereinafter referred to as a support-target plane) is formed by the intersection of the two target surfaces and the central axis of the support on which the base material is placed. By disposing the table and arranging the two target material-side surfaces on the support table-target plane side in an inclined manner, a large amount of particles having high energy are incident in the direction of the base material,Further, the target electrode has a central portion in which the N or S pole is arranged toward the target surface in the central portion, and magnetic poles having opposite polarities to the central surface are arranged on both sides of the central portion magnet. An outer peripheral magnet, and a metal shield plate in an electrically floating state or a ground potential is provided around the target,Furthermore, the above problem was solved by providing an anode having a positive potential with respect to the target potential (hereinafter referred to as an anode) and extracting ions from the plasma near the target to the vicinity of the substrate (claim 1).
[0010]
That is, the deposition rate is increased by arranging the target surface obliquely with respect to the substrate, and a high-energy sputtered atom is incident on the substrate, so that a dense film can be obtained.Sputter on the side surface of the target is suppressed by the metal shield plate around the target, and stable film formation can be performed.Furthermore, the addition of the anode enables control of the magnetic field distribution in the film forming chamber and control of the ion current by the anode, so that the ion current incident on the substrate can be controlled in a wider range, and a more dense film can be obtained. Was. The center axis of the support is the rotation axis when the support on which the base material is placed is rotatable, and when the support is not rotating, the geometric center of the device, Alternatively, it is the position of the center of gravity of the base material to be arranged.
[0011]
Further, an electromagnet is formed by winding an electric wire along the outer circumference of a set of target materials projected on a plane orthogonal to the support base-target plane, and provided in the direction opposite to the target material side of the set of target electrodes. (Claim 2). Accordingly, the magnetic field distribution in the film formation chamber can be changed, and the ion current to be incident on the substrate can be controlled in a wide range. further,The pair of targets arranged in an inclined manner may be asymmetrical with respect to the support base-target plane according to the characteristics such as the evaporation rate. However, in order to simplify the apparatus configuration or to control the apparatus. It is desirable to arrange them symmetrically for simplicity (Claim 3).
[0012]
An inclined target can supply a high concentration of particles by setting the angle between the support-target plane and the target surface at 25 ° to 80 ° (Claim 4).
[0013]
In the film forming chamber (in the vacuum vessel), the back side and the front side of the base material are formed toward the pair of targets, but it is effective to provide a plurality of pairs of the targets in order to minimize the back side, that is, the shaded portion. BecauseClaim 5In, a set of two targets is provided at two or more locations in a film formation chamber provided with a support base. This enables high-speed deposition even on a large substrate.
[0014]
In addition, by attaching a sputter target material with a different composition to each target, multi-element thin films can be deposited at low cost, and by appropriately controlling the evaporation rate of each target material, a hard thin film with a high composition can be controlled. Vapor deposition has also become possible. (Claim 6)
[0015]
Not only the target materials of the different sets may be different from each other but also the composition of the pair of target materials may be different from each other. This makes it possible to obtain a film having a more complicated composition with an inexpensive target (Claim 7). Further, a multi-element film can be easily formed at low cost.
[0016]
By making the magnet arrangement of the central part and the peripheral part the same for each pair of target electrodes, it is possible to more accurately control the particles in the direction of the base material.Become.
[0017]
A pair of target of the present inventionOf the membraneIn order to secure the adhesion strength, it is very important to control the amount of evaporation at the start of vapor deposition. Therefore,Claim 8InFurther, a target and a heater for heating the base material extending in the circumferential direction around the base material or the support base at one or more places in the film forming chamber, and around the center axis of the base material or the support base, Are provided in the circumferential direction without interfering with each other,A shutter that can shut off between the target and the base material and between the base material heating heater and the base material is provided to shut off the target and the base material during heating and activation of the target, thereby preventing deposition of impurities on the base material. On the other hand, at the time of ion bombardment and vapor deposition, the space between the heater and the target was shut off so that deposition of the film on the heater could be suppressed, and the shutter was also used as an anode.
[0018]
The heater for heating the substrate plays an important role in heating the substrate and accelerating the degassing of the inside of the evaporation vessel, shortening the cycle of the evaporation treatment, and ensuring the adhesion strength of the film. Furthermore, since the movable shutter is moved to a position that does not cover the target during the vapor deposition process, the movable shutter can also serve as the anode electrode. This eliminates the need to separately install an anode electrode particularly when the space in the film formation chamber is narrow. The shutter is appropriately provided such as an open / close shutter having a fixed position, a rotary moving shutter movable between a target and a substrate, and a heater and a substrate.By providing the shutter, it is possible to more effectively form a film having a high adhesion strength.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, a first embodiment of the present invention will be described. Figure 2SpatterFIG. 3 is a plan view illustrating the arrangement of the base material, the target, and the electromagnet, FIG. 4 is a plan view illustrating the configuration of the electromagnet of the present invention, (a) is a plan view, and (b) is a side view. FIG. 5 is an electric wiring diagram. As shown in FIG. 2, in the magnetron sputtering apparatus 20, a vacuum container door 11 is provided in a vacuum container 1 in which a substrate to be formed is inserted and a film forming chamber is formed, and a film is to be formed in the vacuum container. A substrate 2 and a support 22 on which the substrate is placed are provided, and the support is rotatable around the central axis 10. The central axis 10 coincides with the central axis of the substrate, and the substrate is rotated around the central axis. Since there are various types of the base material 2, it is preferable that the base material 2 is arranged such that an axis passing through the center of gravity of the support base 22 is the central axis 10. Alternatively, the rotation center shaft 10 may be provided on the base material 2 itself without being placed on the support base 22. Two substrate heating heaters (hereinafter simply referred to as heaters) 3 extending in the circumferential direction around the central axis 10 are arranged at symmetrical positions, and one of the heaters is fixed to the vacuum vessel door 11.
[0020]
Two target electrodes 5 each composed of a pair of inclined plates and a target made of a target material 7 fixed to the target electrodes are symmetrically arranged about a central axis 10. The targets are arranged so that the center axis 10 and the intersection line 7c of the pair of target surfaces 7a, 7b form a support-target plane 11a. The target surfaces 7a and 7b are arranged to be inclined at angles α and α ′ with respect to the support-target plane 11a, respectively.
[0021]
A shutter 4 whose plane cross section is arcuate is provided at a symmetrical position with respect to the central axis 10, and is rotatably movable so as to be able to block between the target 7 and the base material 2 or between the heater 3 and the base material 2, respectively. ing. Further, the anode 12 is located between the substrate 2 and the shutter 4 without being in contact with each other, and is symmetrically positioned with respect to the central axis 10 and substantially at the center of a pair of targets.
[0022]
As shown in FIG. 3, the target electrode 5 has a central magnet (permanent magnet) 6a having an N pole in the center facing the target surfaces 7a and 7b, and S poles having opposite polarities to the central magnet on both sides. The outer peripheral magnets (permanent magnets) 6b, 6b are provided so as to face the target surface. Further, a metal shield plate 8 in an electrically floating state or a ground potential is provided around the target. Further, an electromagnet 9 is provided on the back surface of the target electrode 5.
[0023]
The electromagnet 9 is disposed behind the target electrode 5 with the vacuum vessel wall 1a interposed therebetween, as shown in FIG. 4A, and on a surface orthogonal to the support base-target plane 11a as shown in FIG. 4B. An electric wire 9a is wound around the projected outer circumference 7d of the set of target materials, and a magnetic field is generated along the support base-target plane 11a by flowing an electric current. As in FIG. 2, the anode 12 is provided at the center of each pair of targets so that a pair of two pairs of target electrodes can discharge well.
[0024]
As shown in FIG. 5, the heater 3 is connected to an AC power supply 31 to increase the degassing speed in the vacuum vessel 1 by conducting and heating, and keep the base material at a predetermined temperature. Further, a substrate power supply 21 for applying a bias voltage to the substrate 2, a heater power supply 31 for heating the heater, a target power supply 51 for applying a bias voltage to the target, and a current flowing through the electromagnet 9 to generate a magnetic field. An electromagnet power supply 91 is provided for the operation. The anode electrode 12 is connected so that a positive voltage can be supplied from the anode power supply 13.
[0025]
【Example】
(Example 1)
The TiAlN film was coated using the magnetron sputtering apparatus 20. In the first embodiment, in the apparatus shown in FIG. 2, a target electrode of a titanium plate having a size of 7 cm × 25 cm × 5 mm and a target material of an aluminum plate having the same dimensions were used as a set of two target electrodes. 5, the target surfaces 7 a and 7 b were installed at an angle of 45 degrees with respect to the support base-target plane 11 a, and a pair of targets having the same configuration was installed on the opposite side across the base material 2. A SUS304 cylinder having a diameter of 10 cm, a height of 25 cm, and an inner diameter of 9.4 cm was used as the substrate 2 and was placed on a substrate support having a rotating mechanism. At this time, the rotation speed of the substrate was set to 10 rpm. The electromagnet 9 was not used. At this time, a voltage of +30 V was applied to the anode electrode to improve the plasma density in the vacuum vessel.
[0026]
First, the vacuum container 1 is set to 1 × 10^-6A vacuum was applied to Torr, and at the same time, the heater 3 was energized and heated to raise the temperature of the substrate to 300 ° C. At this time, the two shutters 4 are arranged in front of two sets of targets, respectively. Next, argon gas was introduced into the vacuum vessel at a flow rate of 50 ccm, and each target was activated at -400 V, 5 A for 10 minutes in order to remove deposits and reaction products on the target surfaces 7a and 7b. Thereafter, the shutter 4 was moved from the target surfaces 7a and 7b to the front surface of the heater 3, and the substrate 2 was sputter-etched with a bias of -450 V for 20 minutes to activate the substrate surface. Thereafter, nitrogen gas was introduced into the vacuum vessel. The anode voltage was kept constant at +30 V until the introduction of nitrogen gas was completed. Further, the coating treatment was performed for 1 hour with the voltage of the substrate 2 set to -100V. At this time, the amount of nitrogen gas introduced was suppressed for 20 seconds from the start of coating to evaporate only titanium, thereby forming an adhesive layer of only titanium at the interface between the film and the substrate. Thereafter, the introduction amount of nitrogen gas was gradually increased until it reached 50 sccm, and the evaporation amount of aluminum was adjusted so that the atomic ratio of titanium to aluminum was 1: 1 by adjusting the target current.
[0027]
After the vapor deposition, the film thickness was determined to be 4.5 μm. Thus, the film growth rate was 4.5 μm / h, which was higher than the conventional sputtering method. In the evaluation by the scratch test, the critical load at which the acoustic emission appeared was 75 N, and the adhesion was sufficiently high for practical use. Further, when the film hardness was measured with a micro Vickers hardness meter, it was 2550 Hv, which was sufficient hardness for a TiAlN film. When the anode voltage is not applied, the film thickness is 4.5 μm (film growth rate: 4.5 μm / h), the critical load is 70 N, and the film hardness is 2450 Hv. By applying a voltage to the anode, a denser film can be obtained. It can be seen that it was formed.
[0028]
For comparison, a TiAlN film was deposited by using a conventional magnetron sputtering apparatus 30 shown in FIG. At this time, two 14 cm × 25 cm × 5 mm plates made so that the ratio of Ti to Al was 1: 1 were symmetrically arranged on the target material 37 fixed to the target electrode 35. Using this, a TiAlN film was similarly deposited for one hour. However, since the film composition cannot be graded in principle in the comparative device, the film is a TiAlN film without gradient. In the measurement after the deposition, the film thickness was 3 μm. Therefore, the deposition rate was 3 μ / h, and the deposition rate was lower than that of the apparatus of the present invention. In the scratch test, the critical load was 50 N, and the adhesive strength was lower than that of the device of the present invention having a gradient composition layer. The film hardness was 2100 Hv, which was lower than that of the apparatus of the present invention.
[0029]
As described above, in the apparatus of the present invention, it was possible to continuously change from the Ti film, which is the adhesive layer, to the TiAlN film, and thus, it was possible to form a film having high adhesion. By tilting the target, a dense and high-hardness film could be obtained at high speed, and by providing the anode, a denser and high-hardness film could be formed.
[0030]
(Second embodiment)
Next, a second embodiment of the present invention will be described. In the second embodiment, a CrN film was coated on an aluminum material using the magnetron sputtering apparatus 20 'of the present invention shown in FIG. In Example 1, the substrate was cylindrical, but in Example 2, as shown in FIG. 6, the shape of the substrate 2 was a rectangular parallelepiped, all the target materials 7 were the same, and the mounting angle was α = The only difference is that α ′ = 60 degrees and the use of the electromagnet 9. In FIG. 6, a chrome plate of 7 cm × 25 cm × 5 mm is attached to all of the two sets of targets, and the surfaces 7 a and 7 b of each target are set so as to be inclined at 60 degrees with respect to the support-target plane 11 a. Was placed on the opposite side with the substrate interposed therebetween as shown in FIG. The size of the substrate 2 was 25 cm in length, 15 cm in width, and 5 cm in thickness. The substrate 2 was placed on the substrate support 22 as shown in FIG. 6, and the substrate was not rotated. In addition, an electromagnet current was applied to the electromagnet 9 provided outside the target in a direction in which the substrate current increased. In this case, a shutter was used in combination as the anode electrode, and a positive voltage of +30 V was applied to the shutter while maintaining electrical insulation from the vacuum container or the like, thereby improving the discharge plasma density in the vacuum container.
[0031]
First, the vacuum vessel 1 is placed in a state of 1 × 10 with the two shutters 4 arranged in front of two sets of targets.^-6A vacuum was applied to Torr, and at the same time, the heater 3 was energized and heated to raise the temperature of the substrate 2 to 200 ° C. In the following, steps before vapor deposition were performed in the same procedure as in Example 1, and steps up to sputter etching were performed. At this time, the electromagnet current was kept constant at 7 A, and the substrate current was about 2 A. Thereafter, a nitrogen gas was introduced into the vacuum vessel 1, and the coating was performed for 2 hours at a substrate voltage of -120V. At this time, the introduction amount of the nitrogen gas was suppressed for 20 seconds from the start of coating, and thereafter the introduction amount was gradually increased to a predetermined value of 50 ccm. Thereby, an adhesive layer of only chromium was formed on the interface between the film and the substrate.
[0032]
After the vapor deposition, the film thickness was determined to be 14 μm. Thus, the film growth rate was 7.0 μm / h. In addition, in the evaluation by the scratch test, the critical load of the CrN film was about 65 N, and the bonding strength was sufficiently high. Further, the film hardness measured by a micro Vickers hardness tester was 2150 Hv, and a dense and hard film having a large amount of CrN component was formed. When the anode voltage is not applied, the film thickness is 15 μm (film growth rate: 7.5 μm / h), the critical load is about 60 N, and the film hardness is 2000 Hv. By applying a voltage to the anode, a denser film is formed. You can see that it was done.
[0033]
For comparison, a CrN film was deposited using the conventional magnetron sputtering apparatus 30 shown in FIG. 8 described above. At this time, two 14 cm × 25 cm × 5 mm chromium plates were used as targets. Using this magnetron sputtering apparatus, a CrN film was deposited for 2 hours in the same manner as described above. In the measurement after the deposition, the film thickness was 8 μm. Therefore, the deposition rate was 4 μ / h, and the deposition rate was lower than that of the apparatus of the present invention. The critical load according to the scratch test was 60N. Further, the film hardness was 1800 Hv, and the film was rich in Cr2N component, which was lower than that of the present invention. It is considered that the hardness of the present invention is higher than that of the inclined target type magnetron sputtering apparatus of the present invention because the plasma intensity near the base material is high and chromium atoms having high energy are incident on the base material direction.
[0034]
As described above, it was found that the apparatus of the present invention can synthesize a CrN film having good film quality at a high speed, and can sufficiently cover a CrN film required to be thick. In addition, by inclining the target, a dense and high hardness film could be obtained. In particular, a denser film could be formed by providing the anode.
[0035]
(Third embodiment)
Further, a third embodiment of the present invention will be described. In the third embodiment, the TiAlN film was coated using the magnetron sputtering apparatus 20 ″ of the present invention shown in FIG. 7. In FIG. 7, a target having a titanium plate of 7 cm × 25 cm × 5 mm was attached. And a set of targets prepared by mounting aluminum plates of the same dimensions and having the surfaces 7a and 7b of the targets set at an angle of α = α ′ = 50 degrees with respect to the support-target plane 11a. 7, three sets of targets having the same configuration were installed as shown in Fig. 7. A four-axis self-revolving support base 22 was used, and a round rod 2 made of SKD51 having a diameter of 8 cm and a height of 20 cm was placed thereon. The rotation speed of the support 22 during the coating process was set to 6 rpm, and each substrate 2 was rotated 15 degrees for each rotation of the support 2. The same components as those described above are denoted by the same reference numerals and described. To Substantially. However here was to improve the plasma density in the provided coating the anode 12 between a plurality of targets consisting of the shutter and the base material 2 without attaching pairs.
[0036]
Using an apparatus shown in FIG.^-6  The pressure was exhausted to Torr, and at the same time, the heater 3 was energized and heated to raise the temperature of the substrate 2 to 300 ° C. Thereafter, a TiAlN film was deposited in the same procedure as in Example 1. However, at this time, the current of the electromagnet 9 was kept constant at 7 A, +30 V was applied to the anode 12, the plasma density was improved, and the current of the substrate 2 was adjusted to 3 A. The vapor deposition treatment was performed for 40 minutes, and the film formation rate, adhesion strength, and film hardness were examined using a test piece made of SKD51 that was placed at the same time as the substrate 2 after cooling.
[0037]
As a result, the film growth rate was 8 μm / h, which was sufficiently higher than the conventional sputtering method. Further, the adhesion strength, that is, the critical load in the scratch test was 75 N, and the adhesion was sufficiently high for practical use. The film hardness was 2500 Hv, which was sufficient for a TiAlN film. Without applying the anode voltage, the film growth rate was 7 μm / h, the critical load was 70 N, and the film hardness was 2400 Hv.
[0038]
As described above, in the apparatus of the present invention, it was possible to continuously change from the Ti film, which is the adhesive layer, to the TiAlN film, and thus, it was possible to form a film having high adhesion. Further, by using three targets, a denser film having higher hardness could be obtained at higher speed.
[0039]
【The invention's effect】
In the present invention, a target made of a target electrode and a target material of a magnetron sputtering apparatus is formed into a set of two targets, and the surfaces of the two targets are respectively arranged obliquely on the support base-target plane side, and the target surface is raised toward the base material. A large amount of energetic particles are incident, and an anode (anode) having a positive potential with respect to the potential of the target is provided, so that the deposition rate is faster and sputtered particles with high energy are applied to the substrate. The incidence makes it possible to easily deposit a multi-element thin film whose composition is controlled, such as a gradient composition film, and to deposit a dense film with high adhesion strength at high speed in a short time.In addition, the pair of target electrodes can more precisely control the particles in the direction of the base material by making the magnet arrangements at the center and the outer periphery the same, and the target electrode has an N or S pole at the center. A central magnet arranged toward the target surface, and outer peripheral magnets of opposite polarity arranged on both sides of the central magnet, and a metal shield plate in an electrically floating state or ground potential is provided around the target, and particles Because the directionality of is stabilized, control becomes easier.In particular, by providing an anode that has a positive potential with respect to the target potential, ions can be extracted from the plasma near the target to the vicinity of the substrate, enabling control of the magnetic field distribution in the deposition chamber and control of the ion flow by the anode. Thus, the ion current incident on the substrate can be controlled in a wider range.Further, in the invention according to claim 2, an electromagnet in which an electric wire is wound along the outer periphery of the target material is provided behind the target electrode to change the magnetic field distribution in the film forming chamber and to widen the ion current to be incident on the substrate. , The plasma region generated near the magnetron sputter target can be expanded in the direction of the substrate, thereby controlling the number of ions incident on the substrate, and improving the film quality and film formation rate. Can be. Further, the plasma region generated near the target can be extended to the vicinity of the base material, and thus the adjustment range of the base material current can be widened, so that the film quality can be easily controlled.
[0040]
Further, the pair of targets arranged in a slanted manner is arranged symmetrically with respect to the support base-target plane, and the structure and control can be simplified, so that the production and control are easy.
[0041]
Further, by setting the angle between the support base and the target plane and the target surface from 25 ° to 80 °, high-concentration particles can be supplied, so that a dense multi-element thin film can be provided at a higher deposition rate.
[0042]
Further, a set of two targets is provided at two or more places in the film forming chamber provided with the support base, so that high-speed deposition can be performed even on a large base material, and a large amount of base material can be formed at one time. Can also be deposited, and is suitable for mass production.
[0043]
In addition, a sputter target material having a different composition is attached to each target, or the composition of a pair of target materials is made different from each other, so that the target is composed of an inexpensive material without using an expensive alloy material. In addition, the composition of the film can be freely controlled by adjusting the evaporation amount of each target, so that a gradient composition film or a multilayer film having a high adhesion strength can be easily formed.
[0044]
In addition, a shutter that doubles as an anode is provided between the target and the base material, and shuts off between the target and the base material during heating and activation of the target, and shuts off between the heater and the base material during ion bombardment and during vapor deposition. Thus, high adhesion strength can be ensured by reducing contamination of the substrate surface at the time of activation of the target, and adhesion of the vapor deposition substance to the heater during vapor deposition can be suppressed. In addition, it is not necessary to separately install an anode, and the film forming chamber can be used efficiently. Alternatively, the film forming chamber can be made small. In addition, there is an advantage that maintainability becomes very good. As described above, the inclined target type magnetron sputtering apparatus of the present invention has various advantages as compared with the conventional magnetron sputtering apparatus, and has become very useful in industry.
[Brief description of the drawings]
FIG. 1 is an angular distribution diagram of evaporated atoms in a sputtering phenomenon, wherein (a) is an angular distribution diagram of a flight direction (degree) of sputtered particles and a Ti deposition rate (A / sec) on a substrate, and (b). FIG. 4 is an explanatory diagram showing an angle of a flight direction of a sputtered particle from a target surface.
FIG. 2 is a plan view illustrating a configuration of a magnetron sputtering apparatus according to a first embodiment of the present invention.
FIG. 3 is a plan view illustrating an arrangement of a base material, a target (a target electrode and a target material), and an electromagnet.
4A and 4B show a configuration of an electromagnet of the present invention, wherein FIG. 4A is a plan view and FIG. 4B is a side view.
FIG. 5 is an electric wiring diagram showing an example of electric wiring of the device shown in FIG. 2;
FIG. 6 is a plan view illustrating a configuration of a magnetron sputtering apparatus in which a shutter used in the second embodiment of the present invention also serves as an anode.
FIG. 7 is a plan view illustrating a configuration of a magnetron sputtering apparatus provided with an anode without a shutter used in a third embodiment of the present invention.
FIG. 8 is a plan view illustrating a configuration of a conventional magnetron sputtering apparatus.
[Explanation of symbols]
1 Vacuum container (film formation room)
2 Base material
22 Base support
3 Heater for substrate heating
4 Shutter
5 Target electrode
6a Center magnet (permanent magnet)
6b Peripheral magnet (permanent magnet)
7 Target material
7a, 7b Target surface
7c Intersection line of target surface
7d Perimeter of a set of target materials
8 Metal shield plate
9 Electromagnet
9a Electric wire
10 center axis
11a Plane connecting support and target (support and target plane)
12 Anode
13 Anode power supply
20, 20 ', 20 "magnetron sputtering device
22 Support

Claims (8)

In a magnetron sputtering apparatus in which a target material fixed to a target electrode is evaporated by sputtering to form a film on the surface of a base material, a target including the target electrode and the target material is paired, and the target of the two target surfaces is formed. The target and the support are arranged in the film forming chamber such that a plane connecting the support and the target is formed by the intersection line and the central axis of the support on which the base material is placed. Are arranged in a plane inclined to the plane connecting the support and the target, and the target electrode has a center magnet with a north or south pole facing the target surface at the center, and the center magnet And a pair of outer peripheral magnets whose opposite poles to the central magnet are arranged toward the target surface at both ends of the target magnet. Parts magnet and are the magnet arrangement of the outer peripheral portion magnet is the same, further, a metal shield plate in an electrically floating state or the ground potential to the target periphery is provided with, in the film forming chamber, the potential of the target A magnetron sputtering apparatus, wherein one anode having a positive potential with respect to the target is provided for each of the targets or one for the plurality of targets. An electromagnet in which an electric wire is wound along an outer periphery of the set of target materials projected on a plane orthogonal to a plane connecting the support and the target is arranged in a direction opposite to the target material side of the set of target electrodes. The magnetron sputtering apparatus according to claim 1 , wherein the magnetron sputtering apparatus is provided. Inclined to disposed the two set of targets, said support base - magnetron sputtering apparatus according to claim 1 or 2, characterized in that it is arranged symmetrically relative to a plane connecting the target The target positioned inclined to, the support base - magnetron according to claim 1 or 2 or 3, wherein the angle of the plane and the target surface connecting the target is characterized in that it is 80 ° to 25 ° Sputtering equipment. The magnetron sputtering apparatus according to any one of claims 1 to 4 , wherein the pair of targets is provided at two or more locations in the film forming chamber. The magnetron sputtering apparatus according to any one of claims 1 to 5 , wherein the target is provided with two or more types of target materials having different compositions. The set of two magnetron sputtering apparatus of claim 6 Symbol mounting compositions are different from each other to each other of the target materials. The target and the base material extending in the circumferential direction around the base material or the support base at one or more places in the film forming chamber, and around the center axis of the base material or the support base. A heater for heating is provided in the circumferential direction without interfering with each other, and a shutter capable of shutting off between the target and the substrate and the heater for substrate heating and the substrate is provided. At the time of activation of the target and between the target and the substrate, during ion bombardment and at the time of vapor deposition, it is possible to shut off between the substrate heating heater and the target, and the shutter is magnetron sputtering equipment according to any one of claims 1 to 7, characterized in that also serves as an anode.

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