JP3553583B2 - Vapor growth equipment for nitride - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a nitride vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus capable of growing a thick film having a thickness of several hundred μm at a high speed and with good uniformity to obtain a crystal having few defects.
[0002]
[Prior art]
BACKGROUND ART Nitride III-V compound semiconductor crystals have received attention as materials for ultraviolet to green light emitting devices, laser devices, and materials for high breakdown voltage and high frequency electronic devices. When fabricating these device structures, it is preferable to use a single crystal of gallium nitride as a substrate, but a bulk gallium nitride crystal is formed from a melt or the like like other compound semiconductor crystals such as GaP and GaAs. Since it is very difficult to perform the process, several μm has been hitherto formed on a hetero substrate such as sapphire using a vapor phase growth method such as a metal organic vapor phase epitaxy (MOVPE) or a hydride vapor phase epitaxy (HVPE). Attempts have been made to grow a gallium nitride crystal of up to several hundred μm in advance and use it as a substrate to fabricate a device structure thereon.
[0003]
When a heterogeneous substrate such as a sapphire substrate is used, there is a problem that it is difficult to form a single crystal due to a difference in lattice constant between the sapphire substrate and gallium nitride. After the formation of the AlN or GaN low-temperature buffer layer, two-stage growth is performed in which gallium nitride is grown at a high temperature.
However, the resulting gallium nitride single crystal has many threading dislocations due to the difference between the lattice constant and the thermal expansion coefficient between the sapphire substrate and gallium nitride, which enhances the characteristics and reliability of the light emitting device. In order to reduce the dislocation density, it is extremely important to reduce the dislocation density.
[0004]
As a method of reducing the dislocation density of the gallium nitride single crystal, the present applicant performs ELO growth (epitaxial lateral overgrowth) by providing a silicon dioxide mask on a part of the surface of the gallium nitride single crystal formed by the two-step growth. Thus, a method for obtaining a high-quality product at a high speed is proposed.
[0005]
In the ELO growth, threading dislocations from the substrate are bent along the mask without propagating into the epitaxial layer due to lateral growth on the mask. For this reason, when gallium nitride is grown as a thick film by ELO growth, the dislocation density of the upper gallium nitride is reduced by about two to three orders of magnitude compared to the lower gallium nitride, and a high-quality crystal with few lattice defects can be obtained. it can. In particular, when ELO is grown by the HVPE method having a high growth rate, a high-quality gallium nitride crystal can be obtained in a short time.
[0006]
FIG. 8 shows a conventional vapor phase growth apparatus using the HVPE method. In a reaction tube 82 of a vapor phase growth apparatus 81, a substrate holder 89 for holding a substrate 88, a hydride introduction tube 83 for introducing ammonia, and a reaction between a gas from a reaction gas introduction tube 84 and a gallium source 86 are performed. A gallium compound producing tube 85 for producing a gallium compound is arranged, and a first heating unit 87 for heating a gallium source 86 and a second heating unit 810 for heating a substrate are arranged outside the reaction tube 82.
[0007]
[Problems to be solved by the invention]
However, it was not easy to perform single crystal growth with excellent uniformity and reproducibility on a target substrate by the HVPE method. For example, gallium nitride is NH ₃ + GaCl → GaN + H ₂ + HCl in the HVPE method.
However, if the mixing of NH ₃ and GaCl is not sufficiently performed and the thermally activated NH ₃ is not supplied onto the substrate, the growth rate of the film thickness is low, and the growth apparatus When the distribution occurs in the inside, there is a problem that the thickness of the obtained gallium nitride becomes uneven.
Also, in a vapor phase growth apparatus for nitride crystals such as gallium nitride by the HVPE method, the distribution of hydride of nitrogen supplied as a gas in the reaction tube becomes non-uniform, and further, the chloride of a group III element generated in the reaction tube However, there is a problem that an efficient growth reaction does not occur due to fluctuations in the amount of methane produced.
[0008]
In general, since the growth of nitride occurs in addition to the substrate on which the nitride is grown, the reaction tube and the substrate holder may be damaged by the stress of the precipitate. When nitride precipitates at the outlet of the source gas supply pipe, it adversely affects the flow of the source gas, making uniform growth difficult. Further, since the precipitation also occurs on the side surface of the substrate and the back surface of the substrate holding portion, cracks may occur in the entire crystal grown by the stress caused by the precipitate.
An object of the present invention is to solve such a problem and to provide a nitride vapor phase growth apparatus for stably growing a uniform nitride single crystal.
[0009]
[Means for Solving the Problems]
The present invention provides a reaction tube for growing a nitride crystal by using a hydride of nitrogen and a chloride of a group III element, a hydride introduction tube for supplying a hydride of nitrogen into the reaction tube, In a nitride vapor phase growth apparatus having a group III element chloride generation tube for generating chloride and supplying it to the reaction tube, the inlet of the hydride introduction tube is connected to a metal source in the group III element chloride generation tube. A substrate for nitride crystal growth, which is arranged upstream and held by a substrate holder, is arranged so as to face a blowing part of a group III element chloride generation tube.
[0010]
In the present invention, by disposing the inlet of the hydride inlet tube upstream of the metal source in the group III element chloride generator tube, nitride hydride diffuses throughout the reaction tube. Further, activation of nitrogen hydride can be promoted from the upstream of the reaction tube by a heating means for heating the metal source. By disposing a substrate holder having a substrate for nitride crystal growth in such a reaction tube so as to face the blowing portion of the group III element chloride generation tube, the nitrogen hydride and the group III element chloride can be removed. The mixing of the materials is improved, the uniformity is improved, and the crystallinity is improved by maintaining the composition ratio (stoichiometry) of the crystals.
[0011]
It is desirable that the position of the inlet of the hydride introduction tube is far from the mixed region of the hydride of nitrogen and the chloride of the group III element, and is located upstream of the metal source, upstream of the heating means, or at the end face of the reaction tube. Conceivable. If it is arranged at least upstream of the metal source, it can be diffused to almost the entire reaction tube, and the activation of nitrogen hydride can be promoted by means of heating the metal source.
Further, by providing a plurality of hydride introduction tubes, it becomes possible to make diffusion of nitrogen hydride in the reaction tube more uniform.
[0012]
Further, the cross-sectional area of the blow-out portion of the group III element chloride generation tube becomes smaller toward the tip. If the cross-sectional area of the blowout portion is large, a part of the NH ₃ gas flows back into the inside thereof, and GaN precipitates, and NH ₃ is contaminated by the group III source. Further, when the cross-sectional area is small, the blowing speed of the chloride of the group III element increases, the distribution of group III and N becomes uneven on the substrate, and the variation in the grown film thickness increases. As a result of repeated experiments in order to avoid these inconveniences, a uniform thickness and quality of nitride crystal can be obtained by setting the cross-sectional area of the blowing section to 5 to 30% of the internal cross-sectional area of the reaction tube. Was completed.
[0013]
Further, in order to grow nitride crystals on a plurality of substrates at the same time by the growth apparatus of the present invention, the blowing part of the group III element chloride generation tube is branched into a plurality of parts, and a large number of substrates attached to the substrate holder. Is arranged so as to face the blowout portion. Thereby, a uniform nitride crystal can be grown on a large number of substrates.
Also, a plurality of group III element chloride generating tubes having a metal source therein are provided, and a large number of substrates attached to the substrate holder are arranged in opposition to the blowing section of the group III element chloride generating tube. A uniform nitride crystal can be grown on a single substrate.
[0014]
In the present invention, a carbon material or a heat-resistant material coated with silicon carbide is used as a material for the substrate holder and the substrate covering. As a result, precipitation on the back surface of the substrate holding portion and the side surface of the substrate can be prevented, and the occurrence of cracks in the crystal is suppressed.
Further, a mask is provided on a part of the surface of AlxGa1-xN (1 ≦ x ≦ 1) formed on the crystal substrate using a vapor phase growth apparatus, and lateral growth parallel to the substrate surface (ELO growth) is performed from the opening of the mask. ) Is performed.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a sectional view illustrating a vapor phase growth apparatus of the present invention.
A hydride introduction tube 3 is attached to the horizontal reaction tube 2, and a hydride of nitrogen such as ammonia is supplied into the reaction tube together with a carrier gas (hydrogen, nitrogen, etc.). As shown in FIG. 1, the hydride introduction port of the hydride introduction pipe 3 is arranged at a position far from the mixing region where the hydride of nitrogen and the gallium compound are mixed.
A gallium compound production tube 5 having a gallium source boat 6 installed therein is attached to the horizontal reaction tube 2, and a reaction gas for producing a gallium compound flows from the reaction gas introduction tube 4 together with a carrier gas (hydrogen, nitrogen, etc.) from the gallium source boat 6. Supplied to A first heating means 7 is provided outside the horizontal reaction tube 2 of the gallium source board 6, and heats the gallium source boat at a temperature suitable for producing a gallium compound at 750 ° C to 950 ° C, preferably 800 ° C to 900 ° C. Do. The generated gallium compound is supplied from the blowing section 9 to the mixing area.
[0016]
The cross-sectional area of the blowing section 9 in the gallium compound generating tube 5 gradually decreases toward the blowing section. The cross-sectional area of the blowing section 9 is preferably 5 to 30% of the cross-sectional area inside the horizontal reaction tube.
A baffle plate 8 is provided on the downstream side of the gallium source boat 6 in the gallium compound generation tube 5. Ammonia flows backward from the blowing section 9 of the gallium compound generation tube 5, and does not react with gallium metal of the gallium source boat 6. Like that. The baffle plate 8 adjusts the outflow of the gallium compound so as to be constant.
A substrate 11 on which gallium nitride is to be grown is mounted on a substrate holder 12 and arranged to face the blow-out portion 9. The substrate holder 12 rotates during growth, and the rotation speed of the substrate holder is preferably about 10 rpm. The ratio of the area of the substrate holder 21 to the cross-sectional area inside the horizontal reaction tube 2 is 30 to 70%, more preferably 40 to 60%.
[0017]
Outside the gallium nitride growth region (mixing region) on the downstream side from the tip of the gallium compound generation tube 5 of the horizontal reaction tube, activation of a nitrogen source such as ammonia is promoted, and gallium nitride is produced by reaction with the gallium compound. A second heating means 10 for growing is provided, and the gallium nitride growth region is heated to 850 ° C. to 1050 ° C. by the second heating means. The remaining portion of the gas used for the gallium nitride growth reaction in the gallium nitride growth region is discharged from the outlet 13 to the outside.
[0018]
In the embodiment of the present invention, the hydride introduction port of the hydride introduction pipe 3 is arranged at a position far from the mixing region where the hydride of nitrogen and the gallium compound are mixed. Therefore, the hydride of nitrogen diffuses from the upstream side of the reaction tube to the entire reaction tube. Also, by disposing the inlet upstream of the gallium source boat 6, the first heating means 7 for heating the gallium source boat heats the reaction tube from the upstream of the reaction tube, and the thermal activity of the hydride of nitrogen is increased. Is more promoted. Thereby, the nitrogen source can be more uniformly and stably supplied to the mixing region as compared with a vapor phase growth apparatus in which the inlet of the hydride introducing tube 3 is disposed near the mixing region. The position of the inlet of the hydride inlet tube 3 is located before the gallium source boat 6, but may be at the end face of the horizontal reaction tube 2.
[0019]
Further, a substrate 11 on which gallium nitride is grown is mounted on a substrate holder 12, and is arranged to face the blowing unit 9. Nitrogen hydride is diffused from the upstream side of the reaction tube to the entire reaction tube, and the gallium compound and the nitrogen hydride are mixed well by arranging the substrate so as to face the blowing section 9.
[0020]
By rotating the substrate holder 12 during growth, uniform growth on the substrate surface can be achieved. The blowing section 9 has a gradually decreasing cross-sectional area in the gallium compound generating tube 5, and is arranged so as to be sufficiently mixed with a surrounding nitrogen source such as ammonia. The cross-sectional area of the blowing section 9 is preferably 5 to 30% of the internal cross-sectional area of the horizontal reaction tube, whereby a sufficient mixed region of the gallium compound and a nitrogen source such as ammonia can be formed.
[0021]
In the gallium nitride growth region, it is inevitable that gallium nitride is deposited not only on the substrate but also on the tube walls and internal components in the gallium nitride growth region inside the reactor. However, when the gallium nitride is grown on the surface of the horizontal reaction tube and the quartz generally used as an internal component of the horizontal reaction tube, the quartz may be cracked by the stress generated by the growth of the gallium nitride.
Therefore, in the vapor phase growth apparatus of the present invention, the inner surface of the horizontal reaction tube is protected by providing the inner surface protection tube 14 on the inner surface of the horizontal reaction tube, and the deposition on the inner wall of the reaction tube is prevented. Also, maintenance of the vapor phase growth apparatus is simplified by making the inner protective tube 14 detachable and replacing the inner protective tube 14 on which gallium nitride is deposited with a clean inner protective tube.
[0022]
Similarly, by attaching the tip protection tube 15 to the outlet 9 of the gallium compound producing tube into the horizontal reaction tube, the gallium compound can be prevented from directly depositing on the outlet 9, and the tip protection tube can be prevented. The replacement of 15 can avoid the influence on the blowout section 9 due to the precipitation.
Further, in the vapor phase growth apparatus of the present invention, the gallium compound generator has a feature so that the gallium compound can be generated stably.
[0023]
FIG. 2 is a diagram illustrating a gallium source boat in a gallium compound production tube. FIG. 2A is a cross-sectional view, and FIG. 2B shows a partition plate provided in the gallium source boat.
The gallium source boat 6 contains metal gallium 16 and is in a molten state by heating. In the gallium source boat, the partition plate 17 is attached, and the molten metal gallium is in a state of rising due to surface tension inside each area surrounded by the partition plate 17 on all sides. By surrounding the four sides by the partition plate 17, the surface of the metal gallium can have a larger surface area as compared with the case where the partition plate 17 is not provided, and the reaction between the metal gallium and the reaction gas can be further promoted.
[0024]
Further, the partition plate 17 has a communication portion 18 at a lower portion, so that the height of the surface of the molten metal gallium in each region surrounded by the partition plate can be made the same, and the metal in the region surrounded by the partition plate can be formed. Nonuniform gallium can be prevented.
Further, a lid 19 to which the reaction gas introduction pipe 4 such as hydrogen chloride is attached is provided above the gallium source boat 6, and plays a role of increasing the reaction efficiency between the gallium source and the reaction gas.
[0025]
3A and 3B are views for explaining a substrate holder of the vapor phase growth apparatus of the present invention. FIG. 3A is a sectional view, and FIG. 3B is a front view of the substrate holder as viewed from the substrate surface.
The substrate holder 12 includes a rotation shaft 20 and a substrate holder 21 on which the substrate 11 is mounted. The substrate holder 21 is detachable from the rotating shaft 20, and the substrate 11 is attached to the substrate holder 21 by a substrate cover 22 which holds the substrate from the periphery and does not expose the periphery of the substrate to the reactor.
[0026]
In the present invention, the substrate holder 21 and the substrate cover 22 are made of a carbon material or a carbon material coated with silicon carbide, thereby preventing polycrystalline gallium nitride from being deposited on the side surface and the back surface of the substrate 11. . This can prevent crystal cracks due to the stress of the polycrystalline gallium nitride deposited on the back surface of the substrate, and can improve crystal quality and yield.
[0027]
FIG. 4 shows another embodiment of the present invention, which is different from the vapor phase growth apparatus shown in FIG. 1 in the number of hydride introduction tubes connected to the reaction tubes and the mounting position. FIG. 4 is a view of the vapor phase growth apparatus viewed from the end face direction of the reaction tube. A gallium compound generator 5 is provided at the center of the reaction tube 2, and a reaction gas introduction tube 4 is provided in the gallium source boat. FIG. 4 (A) shows an example in which two hydride introduction tubes 3 are connected above and below a gallium compound production tube 5, and FIG. 4 (B) shows four hydride introduction tubes 3 on the circumference. Is an example of the combination. Thus, by disposing the hydride introduction pipes 3 evenly, the concentration distribution of the hydride acting as a nitrogen source in the reaction tube can be made more uniform.
[0028]
FIG. 5 is a sectional view illustrating another embodiment of the vapor phase growth apparatus of the present invention. The apparatus shown in FIG. 5 uses the substrate holder 12 having the substrate holder 61 to which a number of substrates can be attached in the vapor phase growth apparatus shown in FIG. Further, a plurality of blow-out portions 9 of the gallium compound generating tube 5 are provided to enable uniform single crystal growth on a plurality of substrates. The apparatus is the same as the apparatus shown in FIG. 1 except for the structure of the substrate holder 12 and the blowing section 9 and the number of hydride introduction pipes. With this apparatus configuration, it is possible to grow uniform gallium nitride on a plurality of substrates.
[0029]
FIG. 6 is a diagram illustrating a substrate holder that holds a plurality of substrates in the vapor phase growth apparatus of FIG. FIG. 6A is a front view of the substrate holder as viewed from the substrate surface, and FIG. 6B is a cross-sectional view.
The substrate holder 12 includes a rotating shaft 20 rotatably attached to the reactor and a substrate holder 61 for attaching the substrate 11. The substrate holder 61 is detachable from the rotating shaft 20, and the substrate 11 is attached to the substrate holder 61 by a substrate cover 22 that holds the substrate from the periphery and does not expose the periphery of the substrate to the reactor. In order to explain the correspondence between each substrate and the blow-out part of the gallium compound generation part, the positions of the plurality of tip protection tubes 15 are indicated by broken lines.
[0030]
Further, a plurality of through holes 71 are provided in the central portion of the substrate holder 61 to prevent a large area of the substrate holder from obstructing the flow of gas inside the reaction tube.
In the reaction tube, the gallium compound producing tube is not limited to one provided at one place, but by providing a plurality of tubes, the concentration of the gallium compound inside the reaction tube can be made more uniform.
[0031]
FIG. 7 is a sectional view for explaining another example of the gallium nitride vapor phase growth apparatus of the present invention.
The apparatus shown in FIG. 7 uses the substrate holder 12 having the substrate holder 61 to which a large number of substrates can be attached, and further has four gallium compound production tubes 81 in the vapor phase growth apparatus shown in FIG. ing. The gallium compound generation tubes 81 are evenly arranged on the circumference, and the blowing portion 9 is provided at the tip of each gallium compound generation tube 81, enabling uniform single crystal growth on a plurality of substrates. This is the same as the device shown in FIG. 1 except for the structure of the blowing section 9.
[0032]
In the apparatus shown in FIG. 7, since a plurality of gallium compound generation tubes 5 are provided independently, the amount of gallium compound blown out from each gallium compound generation tube is equalized as compared with the apparatus shown in FIG. Can be
In the above description, the horizontal reaction tube placed horizontally has been described, but the same configuration can be applied even when the shape of the reaction tube is vertical.
[0033]
【Example】
The nitride vapor phase growth apparatus of the present invention is suitable for producing a nitride such as aluminum, gallium, indium or the like of Group III of the periodic table, or a mixture thereof. In the following description, as an example, the production of a single crystal of gallium nitride will be described with reference to examples below.
Example 1
A gallium compound generating section in which 800 g of metal gallium was placed in a gallium source boat having a partition with a spacing of 1 cm was provided inside a horizontal quartz reaction tube having an inner diameter of 75 mm similar to that shown in FIG. The gallium compound generator was heated to 750 ° C. and the growth region was heated to 1000 ° C. by a heating furnace.
Hydrogen chloride was introduced into the gallium compound generator from the reaction gas introduction tube at 50 ml / min and 200 ml / min, respectively, using hydrogen as a carrier gas. Further, hydrogen was introduced from a hydrogen introduction tube on the outside thereof, and introduced from a gallium compound blowing tube having an inner diameter of 20 mm to which a quartz protective tube was attached, at a linear velocity of 5 cm / sec near the center of the substrate attached to the substrate holder. .
[0034]
On the other hand, ammonia was introduced together with hydrogen from the end of the reaction tube in the same direction as the direction in which hydrogen chloride was introduced. The linear velocity of the gas containing ammonia introduced into the mixing zone was 1 cm / sec.
Gallium nitride having a film thickness of 1 μm was previously formed on a (0001) plane sapphire substrate having a diameter of 50.8 mm. On the surface of the substrate, stripe-shaped silica patterns of width 3 μm were formed on the gallium nitride crystal at intervals of 4 μm by photolithography. On the other hand, a sample substrate formed in the <11-20> direction and separated from the growth region was mounted on a substrate holder.
[0035]
The substrate holder is a carbon substrate coated with silicon carbide to a thickness of 100 μm on a carbon substrate, and the sample substrate is covered with a substrate cover using the same material as the substrate holder having an opening size of 45 mm. Attached. The ratio of the substrate holder to the internal cross-sectional area of the reaction tube was 55%.
An inner protective tube made of quartz with an inner diameter of 62 mm was provided between the growth region inside the reaction tube and the substrate holder and on the downstream side.
The ammonia supply partial pressure was adjusted to 4.9 × 10 ⁴ Pa (5 × 10 ⁻¹ at), the hydrogen chloride partial pressure was set to 9.8 × 10 ² Pa (1 × 10 ⁻² at), and the rotation speed of the substrate holder was adjusted. Gallium nitride was grown on the sample substrate for 3 hours while rotating at 10 ppm.
The thickness of the obtained gallium nitride single crystal was 300 μm, and no polycrystal was deposited on the peripheral portion and the back surface of the sample substrate, and no substrate crack was generated. The uniformity of the film thickness was within ± 2%, and the dislocation density on the surface was 1 × 10 ⁷ / cm ² .
[0036]
【The invention's effect】
With the nitride vapor phase growth apparatus of the present invention, the concentration of the nitrogen hydride in the reactor is made uniform, and the concentration of the gallium compound generated from the metal gallium is also made uniform to grow the single crystal. High speed and uniformity could be achieved. In addition, since an inner protective tube is used for the inner surface of the reaction tube and a tip protective tube is also provided at a blowout portion of a gallium compound generated from metal gallium, problems such as breakage of the reaction tube due to abnormal growth of gallium nitride are prevented. be able to. Further, since a carbon material or a heat-resistant material coated with silicon carbide is used as a holder for a substrate on which a gallium nitride single crystal is grown, the amount of gallium nitride deposited on the substrate holder can be reduced.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a gallium nitride vapor phase growth apparatus of the present invention.
FIG. 2 is a diagram illustrating a gallium source boat in a gallium compound generation unit.
FIG. 3 is a diagram illustrating a substrate holder of the vapor phase growth apparatus of the present invention.
FIG. 4 is a view for explaining an example of an attachment position of a hydride introduction pipe on an end face to a horizontal reaction tube of a vapor phase growth apparatus.
FIG. 5 is a cross-sectional view illustrating another example of the gallium nitride vapor phase growth apparatus of the present invention.
FIG. 6 is a view for explaining a substrate holder for holding a plurality of substrates in the vapor phase growth apparatus of the present invention.
FIG. 7 is a diagram illustrating another example of the gallium nitride vapor phase growth apparatus of the present invention.
FIG. 8 is a diagram illustrating an example of a conventional vapor phase growth apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Vapor phase growth apparatus 2 ... Horizontal reaction tube 3 ... Hydride introduction tube 4 ... Reaction gas introduction tube 5 ... Gallium compound production tube 6 ... Gallium source boat 7 ... First heating means 8 ... Baffle plate 9 ... Blow-out part 10 ... second heating means 11 ... substrate 12 ... substrate holder 13 ... discharge port 14 ... inner surface protection tube 15 ... tip protection tube 16 ... metal gallium 17 ... partition plate 18 ... communication part 19 ... cover 20 ... rotary shaft 21 ... substrate Holder 22 ... substrate cover 30 ... tube wall 31 ... hydride introduction tube 41 ... reaction gas introduction tube 51 ... gallium compound generation tube 61 ... substrate holder 71 ... through hole 81 ... vapor phase growth apparatus 82 ... reaction tube 83 ... hydrogen Compound introduction tube 84 Reactant gas introduction tube 85 Gallium compound production tube 86 Gallium source 87 First heating means 88 Substrate 89 Substrate holder 810 Second heating means 811 Exhaust port

Claims (12)

A reaction tube for growing a nitride crystal with a hydride of nitrogen and a halide of a group III element, a hydride introduction tube for supplying the hydride of nitrogen into the reaction tube, and a hydride introduction tube provided in the reaction tube; A group III element halide producing means for producing elemental chloride and supplying it into the reaction tube;
The opening end of the hydride introduction tube in the reaction tube is arranged upstream of the blowing portion of the halide generating means of the group III element, and the substrate for nitride crystal growth held by the substrate holder is placed on the substrate. An apparatus for vapor-phase growth of a nitride, wherein the apparatus is arranged so as to face a blowing part of a halide generating means of a group III element. 2. An apparatus for vapor-phase growth of nitride according to claim 1, wherein an open end of said hydride introduction pipe is arranged upstream of a heating means of a metal source or on an end face of a reaction tube. 3. An apparatus for vapor-phase growth of nitride according to claim 1, wherein a plurality of said hydride introduction pipes are provided. The nitride vapor phase growth apparatus according to any one of claims 1 to 3, wherein the cross-sectional area of the blowing part of the means for generating a group III element halide decreases toward the tip. 5. The apparatus for growing a nitride vapor phase according to claim 4, wherein a cross-sectional area of the blow-out portion is 5 to 30% of a cross-sectional area inside the reaction tube. The blow-off portion of the means for generating a halide of the group III element is branched into a plurality of portions, and a plurality of substrates attached to the substrate holder are arranged so as to face the blow-out portion. An apparatus for growing a nitride according to any one of the preceding claims. A plurality of group III element halide generating means having a metal source therein are provided in the reaction tube, and a large number of substrates attached to the substrate holder are opposed to the blowing section of the group III element halide generating means. The nitride vapor phase growth apparatus according to any one of claims 1 to 5, wherein: 8. The metal source boat accommodating a metal source, wherein a partition plate having a communication port through which the surface area of the molten metal is enlarged and the molten metal communicates is provided. Of nitride vapor phase growth equipment. 9. The nitride vapor-phase growth apparatus according to claim 1, wherein the substrate holder and the substrate cover are made of a carbon material or a heat-resistant material coated with silicon carbide. The nitride gas according to any one of claims 1 to 9, wherein at least a hydride of nitrogen and a halide of a group III element are mixed and an inner protective tube is provided on an inner wall of the reaction tube to be heated. Phase growth equipment. The nitride vapor phase growth apparatus according to any one of claims 1 to 10, wherein a detachable tip protection tube is attached to a blowing part of the group III element halide generation means. A mask is provided on a part of the surface of AlxGa1-xN (1 ≦ x ≦ 1) formed on a crystal substrate using the gallium nitride vapor phase growth apparatus according to any one of claims 1 to 11. A nitride vapor phase growth apparatus characterized by performing lateral growth (ELO growth) parallel to a substrate surface from an opening.

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