JP3554183B2 - Information transmission device and image display device - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an information transmission device and an image display device that transmit information by an optical signal emitted from a display screen, which can be applied to a wide variety of applications, such as a navigation system, a game machine, and an educational display.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, in an image display device such as a CRT, supplementary information other than an image such as character information is transmitted by being put on a signal during a flyback period and is displayed over the image. Thereby, the supplementary information of the display image could be transmitted.
[0003]
Further, there has been proposed an image display device that emits an electron beam modulated by an image signal from a plurality of electron sources, irradiates the electron beam with a phosphor, and displays an image.
[0004]
[Problems to be solved by the invention]
However, with this method, the image of the portion where the supplementary information is displayed in a superimposed manner is disturbed.
[0005]
In addition, regardless of whether or not there is a relationship with the display image, the supplementary information is displayed at a predetermined position, so that the relationship with the image cannot be directly expressed.
[0006]
At the same time, all the persons who are looking at the image display device are given the same information regardless of the necessity of the captured information.
[0007]
An object of the present invention is to provide an information transmission device and an image display device that can transmit an auxiliary information by associating an image with the auxiliary information without damaging a displayed image in view of the above problem.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, the information transmission device of the present invention is as follows.UConfiguration. That is, an image display unit that displays an image by causing a plurality of elements to emit light by a drive signal, a drive unit that drives the image display unit by a drive signal obtained by superimposing an information signal on an image signal, and senses light emission of the element. Information superimposed on a driving signal from light sensing means and light sensed by the light sensing meanssignalInformation detecting means for detectingThe driving unit includes a correction unit that corrects an image signal so as to compensate for a luminance that increases due to superposition of the information signal.You.Alternatively, the information transmission device of the present invention has the following configuration. That is, an image display unit that displays an image by causing a plurality of elements to emit light by a drive signal, a drive unit that drives the image display unit by a drive signal obtained by superimposing an information signal on an image signal, and senses light emission of the element. Light sensing means; and information detection means for detecting an information signal superimposed on a drive signal from the light sensed by the light sensing means, wherein the drive means superimposes the information signal on the basis of the value of the image signal. Switch the way.
[0009]
Further, the image display device of the present invention has the following configuration. That is, a display panel that displays an image by applying a drive signal corresponding to a row of interest while scanning each row, a modulation circuit that modulates an image signal corresponding to the row of interest, and an information generation circuit that generates a supplementary information signal And a memory for storing the specified area, and, when the area stored in the memory overlaps with the row of interest, the image generating circuit in the row, to the image information corresponding to the column included in the area, A signal synthesizing circuit that superimposes the generated supplementary information to generate a drive signal for the display panel.Driving the column wiring of the display panel, the modulation circuit modulates the image signal to a pulse width corresponding to the value, and the synthesizing circuit performs the supplementation at a timing that does not overlap with the pulse of the modulated image signal. The information signal is superimposed on the modulated image signal, and the pulse width of the modulated image signal is reduced by the amount of the superimposed supplementary information signal.I do.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
The first to fourth embodiments are examples of the image display device. In this embodiment, a multi-electron source constituted by a surface conduction electron-emitting device disclosed in Japanese Patent Application Laid-Open No. 64-31332 by the present applicant is used as an electron source of an image display device. Among the cold cathode devices, the surface conduction electron-emitting device has an advantage that a large number of devices can be formed over a large area because it has a particularly simple structure and is easy to manufacture. Each pixel of the image display device has a one-to-one correspondence with a surface conduction electron-emitting device. In the case of a color image display device, these pixels include a red (R) pixel, a blue (B) pixel, and a green (B) pixel. There is a pixel (G). Therefore, the surface conduction electron-emitting device includes a surface conduction electron-emitting device corresponding to a red pixel, a surface conduction electron-emitting device corresponding to a blue pixel, and a surface conduction electron-emitting device corresponding to a green pixel. When a selection voltage is applied to the surface conduction electron-emitting device, the corresponding pixel emits light. Therefore, if a plurality of surface conduction electron-emitting devices are selected by image processing, an image can be displayed without deflecting electrons unlike a CRT image display device. When selecting a plurality of surface conduction electron-emitting devices on the multi-electron source, a selection voltage is applied to the column wiring or the row wiring connected to each device.
[0011]
In this embodiment, a surface conduction electron-emitting device will be described as a cold cathode device constituting a multi-electron source. However, the present invention can be applied to other devices having good high-speed response.
[0012]
Further, in the following embodiments, the scanning voltage is applied to the row direction wiring and the modulation voltage is applied to the column direction wiring.
[First Embodiment]
Hereinafter, an image display device according to the present invention will be specifically described with reference to the drawings.
<Drive circuit>
FIG. 1 is a block diagram of a drive circuit of an image display device according to the present invention. In FIG. 1, an image display panel 101 uses a surface conduction electron-emitting device, and is connected to an external electric circuit via terminals Dx1 to Dxm and Dy1 to Dyn. A high voltage terminal Da on the image display panel 101 is connected to an external high voltage power supply Va to accelerate emitted electrons. Of these terminals, terminals Dx1 to Dxm are used to sequentially drive the multi-electron beam sources provided in the above-described panel, that is, the surface conduction electron-emitting devices arranged in a matrix of M rows and N columns in a row. Are applied. On the other hand, to the terminals Dy1 to Dyn, a modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting device in one row selected by the scanning signal is applied. In the present embodiment, the scanning signal has a negative polarity and the modulation signal has a positive polarity. Each surface conduction electron-emitting device does not emit electrons when the applied voltage is equal to or lower than a predetermined threshold, and emits electrons when the applied voltage exceeds the threshold. The element to which the and the modulation signal are applied at the same time is lit only for the duration of the application.
[0013]
Next, the scanning circuit 102 will be described. The circuit includes m switching elements therein, and each switching element selects one of a selection voltage Vs and a non-selection voltage Vns, and scans each row in synchronization with a horizontal synchronization signal H-SYNC. Then, it is electrically connected to the terminals Dx1 to Dxm of the display panel 101 sequentially. At this time, the selection voltage Vs is set to the output voltage of the DC voltage source Vx (not shown), and the non-selection voltage Vns is set to 0 [V] (ground level). Each switching element operates based on a control signal output from a timing signal generation circuit 104 (described later). In practice, these switching elements can be easily configured by combining switching elements such as FETs.
[0014]
In this embodiment, the DC voltage source Vx is applied to an element that is not scanned based on the characteristics of the surface conduction electron-emitting device illustrated in FIG. 20 (electron emission threshold voltage is 8 [V]). It is set to output a constant voltage of 7 [V] so that the driving voltage to be applied is equal to or lower than the electron emission threshold voltage.
[0015]
Next, the flow of the image signal will be described. The decoder 103 separates the input combo image signal into a luminance signal of three primary colors (RGB) and horizontal and vertical synchronization signals (H_SYNC, V_SYNC). The timing signal generation circuit 104 generates various timing signals synchronized with the H_SYNC and V_SYNC signals. The RGB luminance signal is sampled and held at an appropriate timing in the S / H circuit 105. The held signal is converted by a serial / parallel (S / P) conversion circuit 106 into parallel signals arranged in the corresponding order of each phosphor of the image forming panel.
[0016]
Subsequently, the pulse width modulation circuit 107 generates a pulse having a pulse width corresponding to the image signal intensity. Numeral 108 denotes a driving pulse synthesizing circuit which has a shift register therein and shifts an information pulse pattern corresponding to each column-directional wiring sequentially input from the information pulse generating circuit 109, and outputs information pulse patterns of column-directional wirings of all columns. Hold. Then, by superimposing the information pulse pattern input from the information pulse generation circuit 109 on the drive pulse input from the pulse width modulation circuit 107, the pulse patterns of the column direction wirings of all the columns are synthesized. Then, according to a timing signal output from the timing signal generation circuit 104, the signal is applied to the surface conduction electron-emitting device in the display panel 101 through the terminals Dy1 to Dyn of the display panel according to the pulse pattern synthesized for each column.
[0017]
The information pulse generation circuit 109 converts the input information signal into a digital code, and sequentially outputs the digital signal to the drive pulse synthesis circuit 108 according to the arrangement order of the pixels. Here, the image signal and the information signal are independently input from the outside, but the superimposed signal may be input and separated by providing a separation circuit. With this configuration, the information signal and the image signal can be transmitted and received as a superimposed signal.
[0018]
The touch pen 110 has a built-in optical sensor and is used by an observer (not shown) to point to an arbitrary point on the image display panel.
[0019]
FIG. 2 shows a block diagram of the touch pen 110. In the figure, when the light sensor 201 senses light, it generates an electric signal corresponding to the light and outputs it to the information detection circuit 202. When the information detection circuit 202 receives the electric signal from the optical sensor 201 and detects the head of the information, it sequentially stores a series of information in the buffer 203. Details will be described later. When the end of the information is detected, a display command signal is output to the drive circuit 204. The drive circuit 204 displays information stored in the buffer 203 on the information display panel 205. The information display panel 205 is a liquid crystal panel or the like, and is large enough to be built in the touch pen 110 together with the drive circuit 204. Further, instead of the display, a sound corresponding to the data may be emitted.
[0020]
FIG. 3 shows an example in which the information transmission device of the present invention transmits information. In the figure, an image including Mt. Fuji, a lake, and the sun is displayed on the image display panel 101. The operator points to Mt. Fuji with the touch pen 110, and the character string “This is the Mt. Fuji.” Read from the screen is displayed on the information display panel 205 of the touch pen 110.
<Drive signal>
Each signal for transmitting one character will be described with reference to FIG. In the same figure, the character code "T" of "This is the Mt. Fuji." Is superimposed on the image signal for the pixels in rows j to j + 2 and k in the pixels displaying Mt. Fuji. It shows the place. It is assumed that the touch pen 110 indicates a pixel on the (j + 1) th row and the kth column.
[0021]
5A is a timing chart of a vertical synchronization signal (V_SYNC) generated by the timing signal generation circuit 104, and is generated once every time the entire screen is scrolled once.
[0022]
FIG. 3B is a timing chart of the horizontal synchronizing signal (H_SYNC) generated by the timing signal generating circuit 104, which is generated once for each scanning of one row.
[0023]
(C) is a timing chart of the operation clock.
[0024]
(D)-(f) is a timing chart of the signals corresponding to the j-th to (j + 2) -th rows among the scanning signals output from the scanning circuit 102. In the present embodiment, in synchronization with the scanning timing of the corresponding row, the signal falls at the same time as the fall of H_SYNC, a negative selection voltage Vs is applied to the corresponding row direction wiring, and the longest PWM pulse described below rises. It rises after the falling timing and before the falling timing of H_SYNC in the next row.
[0025]
(G) is a timing diagram of a signal corresponding to the j-th to (j + 2) -th rows in the k-th column among the PWM signals output from the pulse width modulation circuit 107. In this embodiment, a pulse is generated that rises with a delay of 10 clocks from the fall of H_SYNC and has a pulse length of a time corresponding to the image signal supplied from the S / P conversion circuit 106.
[0026]
(H) of the information pulses output from the information pulse generation circuit 109 is a signal corresponding to the image of Mt. Fuji, and is a digital code representing "T". Since “T” is 54h in ASCII code, it is represented by 0101100 in binary. These are arranged from the LSB to the MSB, a start bit indicating the beginning of the code is added at the head at the H level, and a parity bit is provided at the end. This figure shows the case of odd parity. In terms of timing, the start bit starts at the same time as the fall of H_SYNC, and it takes 10 clocks to finish the parity bit. Since the PWM signal representing the image rises with a delay of 10 clocks from the rise of H_SYNC, the PWM signal and the character code do not interfere with each other.
[0027]
In the present embodiment, the code representing information is an 8-bit ASCII code, and an H-level start bit (1 bit) and an odd-number parity (1 bit) are added. However, the present invention is not limited to this.
[0028]
(I) is a timing chart of a signal corresponding to a pixel constituting an image of Mt. Fuji in the j-th to (j + 2) -th rows of the k-th column in the PWM signal with information output from the driving pulse synthesis circuit 108. This information-added PWM signal is a signal obtained by synthesizing the PWM modulation signal (g) and the information pulse signal (h) and adjusting the PWM width so that the total light emission time becomes the same as the PWM modulation signal (g). Is applied to each column direction wiring. Specifically, when the information pulse signal is added to the PWM signal, the light emission time of the element increases by that amount. Therefore, the fall timing of the PWM signal input from the pulse width modulation circuit 107 is set to the time corresponding to the increased light emission time. As soon as possible, narrow the width. In the example shown in (i), the ASCII code representing "T" is "01010100", and light emission is performed for four clocks together with the start bit. Therefore, the fall of the PWM signal corresponding to the image signal is advanced by four clocks.
[0029]
Therefore, even when the same gradation is displayed, the fall timing of the PWM may be different depending on the digital data indicating the information signal superimposed on the pixel.
[0030]
If the number of emission clocks of digital data indicating the information signal to be superimposed is larger than the number of emission clocks specified by the image signal, the width of the PWM modulation signal becomes zero, but all information signals are output. . This is because if a part of the information signal is missing, a series of transmitted information becomes meaningless. Therefore, when an information signal is superimposed on a dark portion having a PWM modulation pulse width of 10 clocks or less, the black level may increase. However, it is easy to take measures such as not superimposing the information signal on the dark portion.
[0031]
(J) is a timing chart of a signal output by the optical sensor 201. Now, the touch pen 110 points to a pixel on the (j + 1) th row and the kth column. Therefore, the drive pulse signal of the element, that is, the signal (reference numeral 401 in (i)) of FIG. 4 (i) while the operation signal Dxj + 1 is active (low level) is detected by the optical sensor 201 and output. This signal is photoelectrically converted and input to the information detection circuit 202. The information detection circuit 202 reads a code from the optical sensor output in synchronization with the CLOCK signal of the image display device.
[0032]
(K) is an information extraction mask signal generated inside the information detection circuit 110 to extract only the information signal from the output signal of the optical sensor 201. This signal rises at the clock following the start bit and falls nine clocks later. The start bit is recognized at the H level following the L level for a prescribed period or more. The specified period may be set slightly shorter than (1H period-PWM maximum pulse width).
[0033]
By performing an AND operation on the signal (i) and the signal (k), the start bit and the PWM signal are removed, and the information signal (l) is obtained. This signal is parity-checked, and if it is correct, it is found to be the ASCII code "T", and one character has been transmitted. As described above, since one pixel is scanned once in one field, a code of one character can be superimposed and output from one pixel in one field.
[0034]
Next, transmission of a series of information as a character string will be described with reference to FIG.
[0035]
FIG. 5 shows the transition of the character code transmitted to a certain pixel, in this case, the pixel (j + 1 row and k column) constituting the image of Mt. Fuji in FIG. In FIG. 5, the time t is taken in the downward direction, indicating that the code to be superimposed is changed for each field. First, in the first field, STX (Start of text) is transmitted. From the next field, characters constituting information such as "T", "h", and "i" are sequentially transmitted. Character switching may be performed in synchronization with the vertical synchronization signal. Then, when the information is completed, ETX (End of text) is transmitted, and the process returns to STX again and repeats. In the example of FIG. 5, since 22 codes from STX to ETX are included, a group of character strings can be transmitted in 22 fields.
[0036]
Since the moment when the touch pen 110 points to a pixel is almost in the middle of the information, the information detection circuit 202 discards the information starting from the middle until the STX is found, and sequentially buffers the information following the detection of the STX. 203. Then, when ETX is detected, it is known that it is the end of the information, so that the display command signal is output to the drive circuit 204 as described above.
[0037]
Thus, the information signal superimposed on the pixel pointed by the touch pen 110 can be transmitted. According to this method, the number of characters can be transmitted at the same refresh rate and the same transfer rate as the display screen. For example, if the vertical scanning frequency is 60 fields / second, characters can be transferred at 60 characters / second.
<Area selection and information pulse superposition>
FIG. 23 is a block diagram showing an example of the information pulse generation circuit 109 for selecting a region when the information pulse is superimposed on the PWM signal. In FIG. 23, the content of the information pulse generation circuit is a circuit for superimposing one information pulse in one region, and when different information pulses are superimposed on a plurality of regions, the pulse generation unit 112 Are required by the number of information signals, and the region determination unit 111 is required by the number of regions. FIG. 24 is a block diagram showing an example of the drive pulse synthesis circuit 108. FIG. 24 shows a synthesizing circuit for outputting the signal of the k-th column, and this synthesizing circuit is necessary for the number of columns.
[0038]
In FIG. 23, the area determination unit 111 includes a first point register 1111 and a second point register 1112. As illustrated in FIG. 25, these registers store the positions of the diagonal points 151 and 252 of the separately designated rectangular area A in rows and columns. The position can be specified from an image signal source for displaying an image. The area determination unit 111 specifies the row currently being scanned from the horizontal synchronization signal H_SYNC, and when the row includes a rectangular area determined from the positions stored in the registers 1111 and 1112, combines the columns included in the rectangular area. A region designation signal is input to the circuit, and an information pulse is input from the pulse generation unit 112. This pulse signal is generated in synchronization with the rise of the horizontal synchronization signal as described above.
[0039]
In FIG. 24, the information pulse signal and the area designation signal are signals input from the information pulse generation unit 109 in FIG. 24, and the PWM signal is a signal input from the pulse width modulation circuit 107. The pixel value signal is a digital signal having a predetermined number of bits indicating a pixel value, which is input from the S / P conversion circuit 106. In this circuit, the value indicated by the pixel value signal is directly reflected on the pulse width of the PWM signal. That is, for example, if the pixel value is 8, the pulse width is equivalent to 8 clocks. Therefore, when correction such as device characteristic correction or gradation compression is performed at the stage of PWM modulation, it is necessary to use a value reflecting the corrected pulse width without using the pixel value signal as it is. .
[0040]
In such a configuration, a logical product of the information pulse signal and the area designation signal is obtained by the AND gate 241, and the information pulse signal is input to the OR gate 242 only for the designated area. The PWM signal is input to the OR gate 242, and the logical sum of them is calculated. That is, the output signal of the OR gate 242 is a signal in which the PWM signal and the information pulse signal are superimposed. At this stage, the pulse width has not been adjusted.
[0041]
The pulse width is adjusted using the down counter 244 in order to make the time when the output signal becomes H level coincide with the pulse width of the original PWM signal. Therefore, the output signal of the OR gate 242 is input to the flip-flop 243, and is synchronized with the signal CLOCK. The output of the flip-flop 243 is ANDed with an inverted signal of the zero output of the down counter 244 by the AND gate 246, and then input as an enable signal of the down counter 244. The down counter 244 subtracts one from the value loaded by the load signal in synchronization with the clock only while the enable is enabled, and outputs a zero signal (negative logic) when the value becomes zero. Therefore, the down counter 244 is enabled while its value is not 0 and the output signal of the OR gate 242 is at the H level.
[0042]
The pixel value signal, which is parallel data, is temporarily input to the latch 245 in order to synchronize with the signal input to the drive pulse synthesis circuit 108, and the latched value is output to the down counter 244 in synchronization with the horizontal synchronization signal H_SYNC. Loaded. That is, the pixel value loaded into the down counter 244 corresponds to the same row as the PWM signal input to the drive pulse synthesis circuit 108.
[0043]
Here, as described above, in this example, since the pixel value loaded into the down counter 244 indicates the pulse width, the down counter 244 subtracts the number of clocks at which the pulse is at the H level from the pixel value. Therefore, a zero signal is output when the total time of the H level in the signal in which the information pulse signal and the PWM signal are superimposed coincides with the width of the original PWM signal. Once the zero signal is asserted, AND gate 246 maintains that state until the next line is again loaded with a new pixel value. Therefore, the output signal from the AND gate 247 becomes L level once the zero signal is output as long as the row is displayed. Therefore, as the output signal of the AND gate 247, the H level is output for the same number of clocks as the pulse width of the original PWM signal.
[0044]
With such a configuration, it is possible to realize a display device in which a desired character code is superimposed on a desired region and the luminance thereof is not changed.
[0045]
In the above, Mt. Fuji has been described as an example. However, various information can be similarly transmitted to each of the lakes, the sun, and other image regions. The size of the area can be freely set.
[0046]
Although the region is rectangular in the examples of FIGS. 23 to 25, for example, the region can be specified in units of pixels, and when the specified pixel is included in a row to be displayed, If the information pulse signal is superimposed on the PWM signal in the column corresponding to the pixel, the area on which the information signal is superimposed can be freely specified.
[0047]
In the present embodiment, the start and end of the information are represented using STX and ETX, respectively, but either one may be used or another control code may be used.
[0048]
Further, in this embodiment, the gradation expression of the display image is realized by pulse width modulation, but may be performed by amplitude modulation. Further, the compensation for emitting light by the information signal is realized by shortening the pulse width, but may be performed by adjusting the amplitude of the drive pulse. In this case, for example, a conversion table as shown in FIG. 26 is prepared in advance. In the table of FIG. 26, the relationship between the pulse width and the luminance when the pulse amplitude is changed from A to E is recorded. For example, assume that the original pulse amplitude is A, the original pulse width is w1, and the total pulse width when the information pulse is superimposed on the original PWM signal is w2. In this case, the luminance at which the display device emits light with the amplitude A and the pulse width w1 is L. From the table, the amplitude is C when the pulse width is w2 while the luminance is kept at L. If a good value cannot be obtained, interpolation calculation or an approximate value may be used.
[0049]
In the present embodiment, a color image display device in which one surface-conduction emission element corresponds to one pixel of RGB has been described. However, any device (for example, (Monochrome image device).
(Display panel configuration and manufacturing method)
Next, the configuration and manufacturing method of the display panel of the image display device to which the present invention is applied will be described with reference to specific examples.
[0050]
FIG. 12 is a perspective view of the display panel used in the example, in which a part of the panel is cut away to show the internal structure.
[0051]
In the figure, 1005 is a rear plate, 1006 is a side wall, 1007 is a face plate, and 1005 to 1007 form an airtight container for maintaining the inside of the display panel in a vacuum. When assembling an airtight container, it is necessary to seal the joints of each member to maintain sufficient strength and airtightness.For example, apply frit glass to the joints, Sealing was achieved by firing at 400 to 500 degrees for 10 minutes or more. A method for evacuating the inside of the airtight container will be described later.
[0052]
A substrate 1001 is fixed to the rear plate 1005, and N × M cold cathode elements 1002 are formed on the substrate. (N and M are positive integers of 2 or more and are appropriately set according to the target number of display pixels. For example, in a display device for displaying high-definition television, N = 3000, M It is desirable to set the number to be equal to or greater than 1000. In this embodiment, N = 3072 and M = 1024.) The N × M cold cathode elements are composed of M row-directional wirings 1003 and N columns. Simple matrix wiring is performed by the directional wiring 1004. The portion constituted by 1001 to 1004 is called a multi-electron beam source. The manufacturing method and structure of the multi-electron beam source will be described later in detail.
[0053]
In this embodiment, the substrate 1001 of the multi-electron beam source is fixed to the rear plate 1005 of the hermetic container. However, if the substrate 1001 of the multi-electron beam source has a sufficient strength, The substrate 1001 of the multi-electron beam source itself may be used as the rear plate.
[0054]
A fluorescent film 1008 is formed on the lower surface of the face plate 1007. Since this embodiment is a color display device, phosphors of three primary colors of red, green, and blue used in the field of CRT are separately applied to a portion of the fluorescent film 1008. The phosphor of each color is separately applied in a stripe shape as shown in FIG. 13A, for example, and a black conductor 1010 is provided between the stripes of the phosphor. The purpose of providing the black conductor 1010 is to prevent the display color from being shifted even if the irradiation position of the electron beam is slightly shifted, and to prevent the reflection of external light to prevent the reduction of the display contrast. And preventing charge-up of the fluorescent film by the electron beam. Although graphite is used as a main component for the black conductor 1010, any other material may be used as long as it is suitable for the above purpose.
[0055]
The method of applying the three primary color phosphors is not limited to the stripe arrangement shown in FIG. 13A, but may be, for example, a delta arrangement as shown in FIG. It may be an array.
[0056]
When a monochrome display panel is manufactured, a single-color phosphor material may be used for the fluorescent film 1008, and a black conductive material is not necessarily used.
[0057]
A metal back 1009 known in the field of CRTs is provided on the surface of the fluorescent film 1008 on the rear plate side. The purpose of providing the metal back 1009 is to improve the light utilization rate by mirror-reflecting a part of the light emitted from the fluorescent film 1008, to protect the fluorescent film 1008 from the collision of negative ions, and to increase the electron beam acceleration voltage. To act as an electrode for applying a voltage, or to act as a conductive path for excited electrons of the fluorescent film 1008. The metal back 1009 was formed by forming a fluorescent film 1008 on the face plate substrate 1007, smoothing the surface of the fluorescent film, and vacuum-depositing Al thereon. Note that when a phosphor material for low voltage is used for the fluorescent film 1008, the metal back 1009 is not used.
[0058]
Although not used in this embodiment, a transparent electrode made of, for example, ITO is provided between the face plate substrate 1007 and the fluorescent film 1008 for the purpose of applying an acceleration voltage and improving the conductivity of the fluorescent film. You may.
[0059]
Dx1 to Dxm, Dy1 to Dyn, and Hv are electric connection terminals having an airtight structure provided for electrically connecting the display panel to an electric circuit (not shown). Dx1 to Dxm are electrically connected to the row wiring 1003 of the multi-electron beam source, Dy1 to Dyn are electrically connected to the column wiring 1004 of the multi-electron beam source, and Hv is electrically connected to the metal back 1009 of the face plate.
[0060]
In order to evacuate the inside of the hermetic container to a vacuum, after assembling the hermetic container, an exhaust pipe (not shown) is connected to a vacuum pump, and the inside of the hermetic container is evacuated to a degree of vacuum of about 10 −7 [Torr]. Exhaust. Thereafter, the exhaust pipe is sealed, but a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after the sealing in order to maintain the degree of vacuum in the airtight container. The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating. The degree of vacuum of the power [Torr] is maintained.
[0061]
The basic configuration and manufacturing method of the display panel according to the embodiment of the present invention have been described above.
[0062]
Next, a method of manufacturing the multi-electron beam source used for the display panel of the above embodiment will be described. The material, shape, and manufacturing method of the cold cathode device are not limited as long as the multi-electron beam source used in the image display device of the present invention is an electron source in which cold cathode devices are arranged in a simple matrix. Therefore, for example, a cold cathode device such as a surface conduction type emission device, an FE type, or an MIM type can be used.
[0063]
However, in a situation where a display device having a large display screen and an inexpensive display device is required, among these cold cathode devices, the surface conduction type emission device is particularly preferable. That is, in the FE type, since the relative position and shape of the emitter cone and the gate electrode greatly affect the electron emission characteristics, extremely high-precision manufacturing technology is required, but this achieves a large area and a reduction in manufacturing cost. Is a disadvantageous factor. Further, in the MIM type, it is necessary to make the thicknesses of the insulating layer and the upper electrode thin and uniform, which is also a disadvantageous factor in achieving a large area and a reduction in manufacturing cost. On the other hand, since the surface conduction electron-emitting device has a relatively simple manufacturing method, it is easy to increase the area and reduce the manufacturing cost. The inventors have found that among the surface conduction electron-emitting devices, those in which the electron-emitting portion or its peripheral portion is formed of a fine particle film have particularly excellent electron-emitting characteristics and can be easily manufactured. Therefore, it can be said that it is most suitable for use in a multi-electron beam source of a high-luminance, large-screen image display device. Therefore, in the display panel of the above embodiment, a surface conduction electron-emitting device in which the electron-emitting portion or its peripheral portion is formed of a fine particle film was used. Therefore, the basic configuration, manufacturing method, and characteristics of a suitable surface conduction electron-emitting device will be described first, and then the structure of a multi-electron beam source in which many devices are arranged in a simple matrix will be described.
(Suitable device structure and manufacturing method of surface conduction type emission device)
There are two typical configurations of a surface conduction electron-emitting device in which an electron-emitting portion or its peripheral portion is formed from a fine particle film, a planar type and a vertical type.
(Flat-type surface conduction electron-emitting device)
First, an element configuration and a manufacturing method of the planar type surface conduction electron-emitting device will be described. FIG. 14 is a plan view (a) and a cross-sectional view (b) for describing the configuration of a planar surface conduction electron-emitting device. In the figure, 1101 is a substrate, 1102 and 1103 are device electrodes, 1104 is a conductive thin film, 1105 is an electron-emitting portion formed by energization forming, and 1113 is a thin film formed by energization activation.
[0064]
As the substrate 1101, for example, various glass substrates including quartz glass and blue plate glass, various ceramics substrates including alumina, or a substrate in which an insulating layer made of, for example, SiO 2 is laminated on the various substrates described above, Etc. can be used.
[0065]
The device electrodes 1102 and 1103 provided on the substrate 1101 in parallel with the substrate surface are formed of a conductive material. For example, metals such as Ni, Cr, Au, Mo, W, Pt, Ti, Cu, Pd, and Ag, alloys of these metals, metal oxides such as In2O3-SnO2, and polysilicon The material may be appropriately selected from semiconductors and the like. An electrode can be easily formed by using a combination of a film forming technique such as vacuum deposition and a patterning technique such as photolithography and etching. However, the electrode can be formed by other methods (for example, printing technique). I can't wait.
[0066]
The shapes of the device electrodes 1102 and 1103 are appropriately designed according to the application purpose of the electron-emitting device. In general, the electrode spacing L is usually designed by selecting an appropriate value from the range of several hundreds of angstroms to several hundreds of micrometers. Among them, for application to a display device, it is preferable that the electrode spacing L be more than a few micrometers. It is in the range of ten micrometers. Further, as for the thickness d of the device electrode, an appropriate numerical value is usually selected from the range of several hundred angstroms to several micrometers.
[0067]
A fine particle film is used for the conductive thin film 1104. The fine particle film described here refers to a film containing a large number of fine particles as constituent elements (including an island-shaped aggregate). When the fine particle film is examined microscopically, usually, a structure in which the individual fine particles are spaced apart from each other, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other is observed.
[0068]
The particle size of the fine particles used for the fine particle film is in the range of several Angstroms to several thousand Angstroms, but is preferably in the range of 10 Angstroms to 200 Angstroms. The thickness of the fine particle film is appropriately set in consideration of various conditions as described below. That is, the conditions necessary for good electrical connection to the element electrode 1102 or 1103, the conditions necessary for good energization forming described below, and the electric resistance of the fine particle film itself to an appropriate value described later. Necessary conditions, etc.
[0069]
Specifically, it is set within the range of several Angstroms to several thousand Angstroms, and the most preferable is between 10 Angstroms and 500 Angstroms.
[0070]
Examples of materials that can be used to form the fine particle film include Pd, Pt, Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Zn, Sn, Ta, W, and Pb. Metal such as PdO, SnO2, In2O3, PbO, Sb2O3, and the like; boride such as HfB2, ZrB2, LaB6, CeB6, YB4, and GdB4; TiC; Examples include carbides such as ZrC, HfC, TaC, SiC, WC, etc., nitrides such as TiN, ZrN, HfN, etc., semiconductors such as Si, Ge, etc., and carbon. Selected from these.
[0071]
As described above, the conductive thin film 1104 is formed of a fine particle film, and its sheet resistance is set to be in the range of 10 3 to 10 7 [Ohm / sq].
[0072]
Note that the conductive thin film 1104 and the device electrodes 1102 and 1103 are desirably electrically connected favorably, and thus have a structure in which a part of each overlaps. In the example of FIG. 14, the layers are stacked in the order of the substrate, the device electrode, and the conductive thin film from the bottom, but in some cases, the substrate, the conductive thin film, and the device electrode are stacked in the order of the bottom. I can't wait.
[0073]
Further, the electron emitting portion 1105 is a crack-like portion formed in a part of the conductive thin film 1104, and has a higher electrical property than the surrounding conductive thin film. The crack is formed by performing the energization forming process described later on the conductive thin film 1104. Fine particles having a particle size of several Angstroms to several hundred Angstroms may be arranged in the crack. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, they are schematically shown in FIG.
[0074]
The thin film 1113 is a thin film made of carbon or a carbon compound, and covers the electron emitting portion 1105 and its vicinity. The thin film 1113 is formed by performing an energization activation process described later after the energization forming process.
[0075]
The thin film 1113 is any one of single-crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500 Å or less, but more preferably 300 Å or less. preferable.
[0076]
Since it is difficult to accurately show the actual position and shape of the thin film 1113, it is schematically shown in FIG. Further, in the plan view (a), an element in which a part of the thin film 1113 is removed is illustrated.
[0077]
The basic configuration of the preferred element has been described above. In the examples, the following elements were used.
[0078]
That is, blue glass was used for the substrate 1101, and Ni thin films were used for the device electrodes 1102 and 1103. The thickness d of the device electrode was 1000 [angstrom], and the electrode interval L was 2 [micrometer].
[0079]
Pd or PdO was used as the main material of the fine particle film, the thickness of the fine particle film was about 100 [angstrom], and the width W was 100 [micrometer].
[0080]
Next, a method for manufacturing a suitable planar surface conduction electron-emitting device will be described. FIGS. 15A to 15D are cross-sectional views for explaining a manufacturing process of the surface conduction electron-emitting device. The notation of each member is the same as that in FIG.
[0081]
1) First, as shown in FIG. 15A, device electrodes 1102 and 1103 are formed on a substrate 1101.
[0082]
In formation, the substrate 1101 is sufficiently washed beforehand with a detergent, pure water, and an organic solvent, and then a material for an element electrode is deposited. (As a deposition method, for example, a vacuum film forming technique such as a vapor deposition method or a sputtering method may be used.) Then, the deposited electrode material is patterned by using a photolithography / etching technique. The illustrated pair of element electrodes (1102 and 1103) are formed.
[0083]
2) Next, a conductive thin film 1104 is formed as shown in FIG.
[0084]
In the formation, first, an organic metal solution is applied to the substrate (a), dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography and etching. Here, the organometallic solution is a solution of an organometallic compound containing a material of fine particles used for the conductive thin film as a main element. (Specifically, in this example, Pd was used as a main element. In this example, a dipping method was used as a coating method, but other methods such as a spinner method and a spray method may be used.)
Examples of a method for forming a conductive thin film made of a fine particle film include methods other than the method of applying an organometallic solution used in this example, such as a vacuum evaporation method, a sputtering method, or a chemical vapor deposition method. Sometimes used.
[0085]
3) Next, as shown in FIG. 3C, an appropriate voltage is applied between the device electrodes 1102 and 1103 from the forming power supply 1110, and the energization forming process is performed to form the electron emission portion 1105.
[0086]
The energization forming process is a process of energizing the conductive thin film 1104 made of a fine particle film to appropriately break, deform, or alter a part of the conductive thin film 1104 to change the structure to a structure suitable for electron emission. That is. In a portion of the conductive thin film made of the fine particle film that has been changed to a structure suitable for emitting electrons (that is, the electron emitting portion 1105), an appropriate crack is formed in the thin film. Note that the electrical resistance measured between the device electrodes 1102 and 1103 is significantly increased after the formation of the electron emission portions 1105 as compared to before the formation.
[0087]
FIG. 16 shows an example of an appropriate voltage waveform applied from the forming power supply 1110 in order to describe the energization method in more detail. When forming a conductive thin film made of a fine particle film, a pulsed voltage is preferable. In the case of this embodiment, a triangular wave pulse having a pulse width T1 is continuously generated at a pulse interval T2 as shown in FIG. Was applied. At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. In addition, a monitor pulse Pm for monitoring the state of formation of the electron-emitting portion 1105 was inserted between triangular-wave pulses at appropriate intervals, and the current flowing at that time was measured by an ammeter 1111.
[0088]
In the embodiment, for example, in a vacuum atmosphere of about 10 −5 [torr], for example, the pulse width T1 is set to 1 [millisecond], the pulse interval T2 is set to 10 [millisecond], and the peak value Vpf is set for each pulse. Was increased by 0.1 [V]. Then, the monitor pulse Pm was inserted at a rate of one every time five triangular waves were applied. The monitor pulse voltage Vpm was set to 0.1 [V] so as not to adversely affect the forming process. Then, when the electric resistance between the element electrodes 1102 and 1103 becomes 1 × 10 6 [ohm], that is, the current measured by the ammeter 1111 at the time of application of the monitor pulse becomes 1 × 10 −7 [A] or less. At this stage, the energization related to the forming process was terminated.
[0089]
Note that the above method is a preferable method for the surface conduction electron-emitting device of the present embodiment. For example, when the design of the surface conduction electron-emitting device is changed, such as the material and film thickness of the fine particle film or the element electrode interval L, It is desirable to appropriately change the energization conditions accordingly.
[0090]
4) Next, as shown in (d) of FIG. 15, an appropriate voltage is applied between the element electrodes 1102 and 1103 from the activation power supply 1112, and a current activation process is performed to improve the electron emission characteristics. I do.
[0091]
The energization activation process is a process of energizing the electron-emitting portion 1105 formed by the energization forming process under appropriate conditions and depositing carbon or a carbon compound in the vicinity thereof. (In the figure, a deposit made of carbon or a carbon compound is schematically shown as a member 1113.) By performing the energization activation process, the emission current at the same applied voltage is typically smaller than before the activation. Specifically, it can be increased by 100 times or more.
[0092]
Specifically, by applying a voltage pulse periodically in a vacuum atmosphere within a range of 10 −4 to 10 −5 [torr], the organic compound originating in the vacuum atmosphere can be generated. Depositing carbon or carbon compounds. The deposit 1113 is one of single-crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500 Å or less, and more preferably 300 Å or less.
[0093]
In order to explain the energization method in more detail, FIG. 17A shows an example of an appropriate voltage waveform applied from the activation power supply 1112. In the present embodiment, the energization activation process is performed by applying a rectangular wave of a constant voltage periodically. Specifically, the voltage Vac of the rectangular wave is 14 [V], and the pulse width T3 is 1 [mm]. Second] and the pulse interval T4 is 10 [milliseconds]. The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly.
[0094]
An anode electrode 1114 shown in FIG. 14D is for capturing an emission current Ie emitted from the surface conduction electron-emitting device. The anode electrode 1114 is connected to a DC high voltage power supply 1115 and an ammeter 1116. (When the activation process is performed after the substrate 1101 is incorporated into the display panel, the phosphor screen of the display panel is used as the anode electrode 1114.) While applying the voltage from the activation power supply 1112, The emission current Ie is measured by the total 1116 to monitor the progress of the energization activation process, and the operation of the activation power supply 1112 is controlled. An example of the emission current Ie measured by the ammeter 1116 is shown in FIG. 17B. When the pulse voltage is started to be applied from the activation power supply 1112, the emission current Ie increases with the passage of time, but eventually saturates. And hardly increase. As described above, when the emission current Ie is substantially saturated, the application of the voltage from the activation power supply 1112 is stopped, and the energization activation process ends.
[0095]
The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly.
[0096]
As described above, the planar type surface conduction electron-emitting device shown in FIG. 15E was manufactured.
(Vertical type surface conduction electron-emitting device)
Next, another typical configuration of a surface conduction electron-emitting device in which an electron-emitting portion or its periphery is formed of a fine particle film, that is, a configuration of a vertical surface conduction electron-emitting device will be described.
[0097]
FIG. 18 is a schematic cross-sectional view for explaining the basic structure of a vertical type. In the figure, 1201 denotes a substrate, 1202 and 1203 denote device electrodes, 1206 denotes a step forming member, and 1204 denotes a conductive film using a fine particle film. Reference numeral 1205 denotes an electron-emitting portion formed by an energization forming process, and 1213 denotes a thin film formed by an energization activation process.
[0098]
The vertical type differs from the flat type described above in that one of the element electrodes (1202) is provided on the step forming member 1206, and the conductive thin film 1204 covers the side surface of the step forming member 1206. It is in the point. Therefore, the element electrode interval L in the planar type shown in FIG. 14 is set as the step height Ls of the step forming member 1206 in the vertical type. Note that for the substrate 1201, the element electrodes 1202 and 1203, and the conductive thin film 1204 using a fine particle film, the materials listed in the description of the planar type can be used in the same manner. For the step forming member 1206, an electrically insulating material such as SiO2 is used.
[0099]
Next, a method of manufacturing a vertical surface conduction electron-emitting device will be described. FIGS. 19A to 19F are cross-sectional views for explaining the manufacturing process, and the notation of each member is the same as that in FIG.
[0100]
1) First, as shown in FIG. 19A, an element electrode 1203 is formed on a substrate 1201.
[0101]
2) Next, as shown in FIG. 2B, an insulating layer for forming a step forming member is laminated. The insulating layer may be formed by stacking, for example, SiO2 by sputtering, but another film forming method such as, for example, vacuum evaporation or printing may be used.
[0102]
3) Next, as shown in FIG. 3C, an element electrode 1202 is formed on the insulating layer.
[0103]
4) Next, as shown in FIG. 4D, a part of the insulating layer is removed by using, for example, an etching method to expose the element electrode 1203.
[0104]
5) Next, as shown in FIG. 5E, a conductive thin film 1204 using a fine particle film is formed. For the formation, as in the case of the flat type, a film forming technique such as a coating method may be used.
[0105]
6) Next, as in the case of the flat type, an energization forming process is performed to form an electron-emitting portion. (A process similar to the planar energization forming process described with reference to FIG. 15C may be performed.)
7) Next, as in the case of the flat type, a current activation process is performed to deposit carbon or a carbon compound near the electron emitting portion. (The same process as the planar energization activation process described with reference to FIG. 15D may be performed.)
As described above, the vertical surface conduction electron-emitting device shown in FIG. 19F was manufactured.
(Characteristics of surface conduction electron-emitting device used for display device)
The device configuration and the manufacturing method of the planar and vertical surface conduction electron-emitting devices have been described above. Next, the characteristics of the devices used in the display device will be described.
[0106]
FIG. 20 shows typical examples of (emission current Ie) versus (element applied voltage Vf) characteristics and (element current If) versus (element applied voltage Vf) characteristics of the elements used in the display device. Note that the emission current Ie is significantly smaller than the device current If, and it is difficult to show them on the same scale. In addition, these characteristics are changed by changing design parameters such as the size and shape of the device. Therefore, each of the two graphs is shown in arbitrary units.
[0107]
The element used for the display device has the following three characteristics regarding the emission current Ie.
[0108]
First, the emission current Ie sharply increases when a voltage higher than a certain voltage (this is called a threshold voltage Vth) or more is applied to the element. On the other hand, when the voltage is lower than the threshold voltage Vth, the emission current Ie hardly increases. Not detected.
[0109]
That is, the non-linear element has a clear threshold voltage Vth with respect to the emission current Ie.
[0110]
Second, since the emission current Ie changes depending on the voltage Vf applied to the element, the magnitude of the emission current Ie can be controlled by the voltage Vf.
[0111]
Third, since the response speed of the current Ie emitted from the element with respect to the voltage Vf applied to the element is high, the amount of charge of electrons emitted from the element can be controlled by the length of time during which the voltage Vf is applied.
[0112]
Because of the above characteristics, the surface conduction electron-emitting device can be suitably used for a display device. For example, in a display device in which a large number of elements are provided corresponding to pixels of a display screen, display can be performed by sequentially scanning the display screen by using the first characteristic. That is, a voltage equal to or higher than the threshold voltage Vth is appropriately applied to the element being driven, and a voltage lower than the threshold voltage Vth is applied to the element in a non-selected state. By sequentially switching the elements to be driven, the display screen can be sequentially scanned and displayed.
[0113]
Further, by using the second characteristic or the third characteristic, the light emission luminance can be controlled, so that gradation display can be performed.
(Structure of a multi-electron beam source with many elements wired in a simple matrix)
Next, the structure of a multi-electron beam source in which the above-described surface-conduction emission devices are arranged on a substrate and arranged in a simple matrix will be described.
[0114]
FIG. 21 is a plan view of the multi-electron beam source used for the display panel of FIG. On the substrate, surface conduction type emission elements similar to those shown in FIG. 14 are arranged, and these elements are wired in a simple matrix by row-direction wiring electrodes 1003 and column-direction wiring electrodes 1004. An insulating layer (not shown) is formed between the electrodes at the intersections of the row wiring electrodes 1003 and the column wiring electrodes 1004 to keep electrical insulation.
[0115]
FIG. 22 shows a cross section taken along A-A ′ in FIG. 21.
[0116]
The multi-electron source having such a structure includes a row-direction wiring electrode 1003, a column-direction wiring electrode 1004, an inter-electrode insulating layer (not shown), a device electrode of a surface conduction electron-emitting device, and a conductive thin film. Is formed, power is supplied to each element via the row-direction wiring electrodes 1003 and the column-direction wiring electrodes 1004 to perform the energization forming process and the energization activation process.
[Second embodiment]
FIG. 6 shows an example in which the information transmission device transmits information in the second embodiment of the present invention. In the figure, an image including Mt. Fuji, a lake, and the sun is displayed on the image display panel 101, the touch pens 110R, 110G, and 110B each point to Mt. Is displayed on the information display panel 205G of the touch pen 110G, and "This is Fujisan." Is displayed on the information display panel 206B of the touch pen 110B, and "Mt. Fuji: 3776m above sea level" is displayed.
[0117]
The block diagram of the device of this example is shown in FIG. 1 as in the first embodiment. The present embodiment differs from the first embodiment in that the present embodiment differs for each color of a pixel on which information is superimposed. The information pulse generation circuit 109 receives different information for each color even for the same Mt. Fuji, adjusts the color arrangement order of the pixels of the image display panel, and sequentially outputs the same to the drive pulse synthesis circuit 108.
[0118]
FIG. 7 shows the contents of information transmitted for each color. (A) represents information transmitted to the R pixel, (b) represents information transmitted to the G pixel, and (c) represents information transmitted to the B pixel. Although alphanumeric characters (a) and katakana (b) can be represented by 8-bit codes, kanji are usually represented by 2 bytes (16 bits). Therefore, the number of bits of the information signal to be superimposed on one field may be set to 16 bits. However, in the present embodiment, the number of bits is kept at 8 bits, and two fields are required to transmit the kanji. At this time, if a JIS code is used, a control code such as STX or ETX may be included in the kanji code, and may be erroneously recognized at the time of head detection. Therefore, a shift JIS code is used. Since the control code is not included in the kanji code in the shift JIS code, there is no misunderstanding.
[0119]
FIG. 8 is a block diagram illustrating the touch pens 110R, 110G, and 110B according to the present embodiment. In the figure, reference numerals 201 to 205 are the same components as those described in FIG. The color filter 206 transmits only one of the RGB colors. Therefore, it is possible to detect only the information signal superimposed on the pixel of the color transmitted by the color filter 206.
[0120]
In FIG. 7B, the 8-bit katakana is transmitted and the hiragana is displayed on the touch pen 110G in FIG. 6 because the information detection circuit 202 performs the hiragana conversion. Of course, it may be displayed as katakana.
[0121]
Therefore, for example, a problem can be displayed on the red touch pen 110R, and an answer can be displayed on the green touch pen 110G, so that it can be used for education.
[0122]
In the present embodiment, color selection is performed using a color filter. However, color selection may be performed using a spectroscope such as a prism or a diffraction grating.
[0123]
With the above configuration, three types of information signals can be superimposed on one area.
[Third Embodiment]
FIG. 9 is a block diagram of a touch pen 110 according to the third embodiment of the present invention. In the figure, reference numerals 202 to 205 are the same components as those described in FIG.
[0124]
The color filters 206R, 206G, and 206B transmit only the corresponding one color, respectively, and guide the light to the optical sensors 201R, 201G, and 201B.
[0125]
The selection circuit 207 selects which color optical sensor output to send to the information detection circuit 202 according to the input selection signal. The selection signal is determined based on, for example, the state of a switch provided on the touch pen 110.
[0126]
Thus, three types of information can be obtained with one touch pen.
[Fourth Embodiment]
FIG. 10 shows the contents of the transmission information for each color according to the fourth embodiment of the present invention. (A) shows information transmitted to the R pixel, (b) shows information transmitted to the G pixel, and (c) shows information transmitted to the B pixel. By arranging the detection signals in the order of RGB, the information signal can be reproduced. .
[0127]
FIG. 11 is a block diagram of the touch pen 110 according to the present embodiment. In the figure, reference numerals 203 to 205 are the same components as those described in FIG.
[0128]
The color filters 206R, 206G, and 206B transmit only the corresponding one color, respectively, and guide the light to the optical sensors 201R, 201G, and 201B.
[0129]
The information detection circuit 202 receives outputs of the optical sensors 201R, 201G, and 201B, and extracts an information signal from each output by the method described above. At the same time, the extracted RGB signals are arranged in the order of RGB and detected as a character string. As described above, the start and end of the information signal are detected by detecting STX and ETX. As described above, the information signals after STX are sequentially stored in the buffer 203.
[0130]
As a result, the amount of information that can be transmitted in one second is three times that of the first embodiment.
[0131]
【The invention's effect】
As described above, according to the present invention, information can be transmitted without deteriorating the gradation of a display image.
[0132]
Further, information corresponding to each area of the display image can be transmitted.
[0133]
Furthermore, if the shift JIS code is used as the kanji code, the start and end of the information can be detected without fail.
[0134]
Further, different information can be transmitted to a plurality of information receiving means.
[0135]
Further, three types of information can be simultaneously transmitted to one information receiving unit.
[0136]
Further, the amount of information that can be transmitted per unit time can be tripled.
[0137]
[Brief description of the drawings]
FIG. 1 is a block diagram of an image display device according to a first embodiment of the present invention.
FIG. 2 is a block diagram of a touch pen according to the first embodiment of the present invention.
FIG. 3 is a diagram illustrating a state of an operation according to the first embodiment of the present invention.
FIG. 4 is a timing chart of signals according to the first embodiment of the present invention.
FIG. 5 is a diagram illustrating a transmission signal according to the first embodiment of the present invention.
FIG. 6 is a diagram illustrating a state of an operation according to the second embodiment of the present invention.
FIG. 7 is a diagram illustrating a transmission signal according to a second embodiment of the present invention.
FIG. 8 is a block diagram of a touch pen according to a second embodiment of the present invention.
FIG. 9 is a block diagram of a touch pen according to a third embodiment of the present invention.
FIG. 10 is a diagram illustrating a transmission signal according to a fourth embodiment of the present invention.
FIG. 11 is a block diagram of a touch pen according to a fourth embodiment of the present invention.
FIG. 12 is a perspective view of an image display device according to an embodiment of the present invention, in which a part of a display panel is cut away.
FIG. 13 is a plan view illustrating a phosphor array of a face plate of the display panel.
FIGS. 14A and 14B are a plan view and a cross-sectional view of a planar surface-conduction emission type electron-emitting device used in an example.
FIG. 15 is a cross-sectional view showing a manufacturing process of the planar surface-conduction emission type electron-emitting device.
FIG. 16 is a diagram showing an applied voltage waveform during a current forming process.
FIG. 17 is a diagram showing an applied voltage waveform (a) and a change (b) of an emission current Ie in the activation process.
FIG. 18 is a sectional view of a vertical surface conduction electron-emitting device used in an example.
FIG. 19 is a cross-sectional view showing a manufacturing process of the vertical surface conduction electron-emitting device.
FIG. 20 is a graph showing typical characteristics of the surface conduction electron-emitting device used in the example.
FIG. 21 is a plan view of a substrate of a multi-electron beam source used in an example.
FIG. 22 is a partial cross-sectional view of the substrate of the multi-electron beam source used in the example.
FIG. 23 is a block diagram illustrating an example of an information pulse generation circuit according to the first embodiment of the present invention.
FIG. 24 is a block diagram illustrating an example of a driving pulse synthesis circuit according to the first embodiment of the present invention.
FIG. 25 is a diagram showing an example of a designated area according to the embodiment of the present invention.
FIG. 26 is a diagram showing an example of a table of pulse width → amplitude conversion in the embodiment of the present invention.

Claims (15)

Image display means for displaying an image by causing a plurality of elements to emit light by a drive signal,
Driving means for driving the image display means by a driving signal obtained by superimposing an information signal on an image signal;
Light sensing means for sensing light emission of the element;
Information detecting means for detecting an information signal superimposed on a drive signal from the light sensed by the light sensing means ,
It said drive means, the information transmission device according to claim Rukoto of having a correcting means for correcting an image signal so as to compensate for the brightness increased by superimposition of the information signal. The image display means displays a color image having at least two color components, the driving means superimposes an information signal on each color element on an image signal, and the light sensing means emits light for each color element. The information transmission device according to claim 1, wherein the information is transmitted. The driving unit sequentially superimposes information signals for each emission color, and the information detection unit superimposes information detected from the light sensed by the light sensing unit in an order corresponding to a color element on which the light is superimposed. 3. The information transmission device according to claim 2, wherein the information is combined. 4. The information transmitting apparatus according to claim 2, wherein the sensing unit senses an information signal of a designated emission color by an optical filter. The information transmitting apparatus according to claim 2, wherein the light sensing unit senses an information signal of a designated luminescent color by a spectroscope. The information transmission device according to claim 1, wherein the information signal is digital data. 2. The information transmitting apparatus according to claim 1 , wherein the driving unit corrects an image signal by shortening a pulse width. 2. The information transmitting apparatus according to claim 1 , wherein the driving unit corrects the image signal by reducing a pulse amplitude. Image display means for displaying an image by causing a plurality of elements to emit light by a drive signal,
Driving means for driving the image display means by a driving signal obtained by superimposing an information signal on an image signal;
Light sensing means for sensing light emission of the element;
Information detecting means for detecting an information signal superimposed on a drive signal from the light sensed by the light sensing means,
The information transmitting apparatus according to claim 1, wherein the driving unit switches a method of superimposing the information signal according to a value of the image signal. The driving means expresses the gradation of the image signal by amplitude modulation, and when the value of the image signal is smaller than a predetermined threshold value, adds the information signal as a signal of a predetermined amplitude. The information transmission device according to claim 9 . Information transmission device according to any one of claims 1 to 10, characterized in that in response to an output of said information detection means, further comprising information output means for outputting information. The information transmission device according to claim 11 , wherein the information output means displays characters. The information transmission device according to claim 11 , wherein the information output unit emits a voice. Information transmission device according to any one of claims 1 to 13, further comprising a designation means for designating an image area corresponding to the image signal for superimposing the information signal. A display panel that applies a drive signal corresponding to the row of interest while scanning each row to display an image,
A modulation circuit for modulating the image signal corresponding to the line of interest;
An information generation circuit that generates a supplementary information signal;
A memory for storing a specified area;
When the area stored in the memory overlaps with the row of interest, the display panel superimposes the supplementary information generated by the information generation circuit on image information corresponding to a column included in the area in the row. A signal synthesizing circuit for driving signals of
Driving the column wiring of the display panel, the modulation circuit modulates the image signal to a pulse width corresponding to the value thereof, and the synthesizing circuit outputs the supplementary information at a timing that does not overlap with the pulse of the modulated image signal. An image display device , wherein a signal is superimposed on a modulated image signal, and the pulse width of the modulated image signal is reduced by the amount of the superimposed supplementary information signal .

Images