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JP3560109B2 - Method and apparatus for manufacturing thin film photoelectric conversion element - Google Patents
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JP3560109B2 - Method and apparatus for manufacturing thin film photoelectric conversion element - Google Patents

Method and apparatus for manufacturing thin film photoelectric conversion element Download PDF

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Publication number
JP3560109B2
JP3560109B2 JP30614296A JP30614296A JP3560109B2 JP 3560109 B2 JP3560109 B2 JP 3560109B2 JP 30614296 A JP30614296 A JP 30614296A JP 30614296 A JP30614296 A JP 30614296A JP 3560109 B2 JP3560109 B2 JP 3560109B2
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film
cassette
chamber
substrate
photoelectric conversion
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JPH10150210A (en
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章弘 高野
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Fuji Electric Co Ltd
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Fuji Electric Holdings Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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Description

【0001】
【発明の属する技術分野】
本発明は、可撓性フィルム基板を用いた太陽電池などの薄膜光起電力素子の製造方法および製造装置に関する。
【0002】
【従来の技術】
代表的な薄膜光起電力素子の一つにアモルファスシリコン(以下a−Siと略す)太陽電池がある。この太陽電池は、一般に可撓性フィルム基板上に金属電極層、発電層であるa−Si層および透明電極層などを積層して形成されている。現在、a−Si太陽電池に関しての課題には、低コスト化および高効率化が挙げられる。
【0003】
低コスト化には、大量生産が非常に有効である。量産性の向上のための製造方法としては、例えば、Suzuki,K. らにより“Technical Digest of the International PVSEC−1 (1984) p.191”に、或いはOvshinsky,S.R.により同じ文献のp.577 に発表された方法がある。その方法は、帯状のフィルム基板を巻物状にして搬入室に入れ、連続的に複数の反応室を通して多層構造の薄膜光電変換素子を成膜し、搬出室で巻物状にして取り出す方法で、一般にロールツーロールプロセスと呼ばれている。ロールツーロールプロセスは、一定の条件で長尺の帯状フィルム基板に均一性の良い膜が成膜できる優れた製造方法である。
【0004】
ロールツーロールプロセス以外の方法としては、Ichikawa,Y. らにより、“ IEEE 1st World Conference on Photovoltaic Energy Conversion (1994) p.441 ”に、ステッピングロールプロセスが考案されている。この方法では、共通真空槽内に、可動式のヒーターおよびフレームを備えた複数の独立した成膜室があり、その各成膜室では フレームにより可撓性フィルム基板を挟み込んで真空シールをおこないながら、成膜する。成膜後は、フィルム基板を1コマ、1コマ写真のフィルムのように間欠的(ステップ)に搬送することにより、積層構造を構築するものである。
【0005】
【発明が解決しようとする課題】
しかし、ロールツーロールプロセスでは、連続的な成膜を行うため膜厚および膜質の均一性は良いが、複数の成膜室をつなげた構造の製造装置を用い、その間にフィルム基板を通すための開口があるため、例えば真空度等条件の大きく異なる工程を連続させることは不可能である。また、ある成膜室に導入された原料ガス(特にドーピングガス)が、それ以外の成膜室に混入し、太陽電池特性の劣化を引き起こすという問題がある。
【0006】
一方、ステッピングロールプロセスでは、各成膜室の原料ガス種類、圧力といったいわゆる成膜条件を、独立に制御することが可能となる。このため、量産性を損ねず、しかも原料ガスの他の成膜室への混入の問題を解決できる。また、成膜条件の全く異なる化学気相成長法とスパッタリング法の成膜機構を同一真空槽内に設置することも可能となり、発電層と電極層を同一装置内で形成できることから、発電層/電極層界面構造の改質を達成している。一例をあげれば、ロールツーロールプロセスにより製造した太陽電池では、曲線因子が、0.54、変換効率が7.2%であったのに対し、ステッピングロールプロセスにより製造したものでは、曲線因子が、0.62、変換効率が8.1%であった。
【0007】
しかし、ステッピングロールプロセスでは、可動式ヒーターによりフィルムを挟み込むという操作が入ることにより、次のような問題点がある。
その一つは、可動式ヒーターと、フレームにより囲まれた成膜室内の広い部分(1ユニット)において、一度に成膜を行わなければならないということである。広い面積にわたって均一な成膜をおこなうことは非常に難しく、また、成膜条件等が制限されがちである。
【0008】
もう一つは、フィルム挟み込み部で、フィルム基板の熱膨張などにより、微小なフィルムの変形が起こり、この部分での膜厚および膜質の不均一を生じさせている。
これらの問題点は、大面積化を目指すほど、顕著になってくる。しかも、太陽電池各層の不均一は、太陽電池特性にも影響するので、大面積で、しかも特性の優れた太陽電池を得るには、ますます均一な成膜が重要になってくる。
【0009】
以上の問題に鑑み本発明の目的は、ロールツーロールプロセスの持つ優れた均一成膜性と、ステッピングロールプロセスの持つ成膜室の独立稼働という長所をともに併せ持つ製造方法および製造装置を提供することにある。
【0010】
【課題を解決するための手段】
上記課題解決のため本発明は、帯状の可撓性フィルム基板の上に、複数の異なる性質の薄膜を基板を搬送しながら連続的に積層して、光電変換層を形成する薄膜光電変換素子の製造方法において、可撓性フィルム基板を巻いた少なくとも一つのロールを有するカセットを用い、そのカセットを各層を形成するための互いに独立した成膜室に順次装着および脱着をしながら、積層膜を形成するものとする。
【0011】
そのようにすれば、各成膜をロールツーロールプロセスで、しかも互いに独立した成膜室でおこなうので、原料ガスの他の成膜室への混入を防ぐことができる。
製造装置としては、可撓性フィルム基板を巻いた少なくとも一つのロールを有するカセットと、各層を形成するための互いに独立した複数の成膜室と、そのカセットを各成膜室に順次装着および脱着する移動手段とを備えるものとする。
【0012】
そのようにすれば、互いに独立した複数の成膜室でロールツーロールプロセスで成膜をおこない、移動手段で各成膜室間を移送して積層膜を形成できる。
特に、カセットが二つの巻き取り軸を有するものであることがよい。
二つの巻き取り軸を有するものであれば、成膜室側にロールを設ける必要が無く、駆動装置があればよい。
【0013】
そして、各成膜室が、前記カセットの移動手段を備えた共通真空室の周りに配置されたものでも、または、各成膜室が、直列に配置されたものでもよい。
移動手段を備えた共通真空室の周りに各成膜室が配置されていれば、共通真空室と各成膜室との間でカセットの受渡しをすることができて、成膜室間の独立性を保つことができる。また各成膜室が、直列に配置されたものでも、成膜時以外に隣接する成膜室の間でカセットの受渡しをすれば、成膜室間の独立性を保つことができる。
【0014】
また、化学気相成長法による成膜室とスパッタリング法による成膜室とを備えるものとする。
化学気相成長法は光電変換層の形成に最適な成膜法であり、スパッタリング法は、電極膜形成に最適な成膜法であって、その両方を備えることが重要である。
更に、基板のプラズマ処理および真空加熱処理をおこなう前処理室を有するものとする。
【0015】
プラズマ処理および真空加熱処理は基板表面を清浄化し、良質の膜形成を行ううえで極めて重要である。
【0016】
【発明の実施の形態】
上記課題の解決のため本発明は、成膜を全て均一性の良いロールツーロールプロセスで行いながら、しかも各成膜室間で原料ガスの相互拡散を完全に抑止できる成膜方法および成膜装置を考案したものである。以下、図面を参照しながら本発明の実施例について説明する。
[実施例1]
図2は、本発明の製造装置に用いる可撓性フィルム基板1を搬送するための搬送用カセット4の斜視図である。2は可撓性フィルム基板1を巻き取り軸11の周りにまいたロールである。12は二つのロール2を保持するケースであり、可撓性フィルム基板1の成膜位置にあたる部分には窓3が設けられている。13は巻き取り軸11を回転させるための突起である。ケース12の後方にも、成膜時に電極等を挿入するための窓3aが設けられている。
【0017】
可撓性フィルム基板1としては、アラミド、ポリエーテルサルフォン(PES)、ポリエチレンナフタレート(PEN)、ポリエチレンテレフタレート(PET)、ポリイミドなどの樹脂膜が用いられる。構造によっては金属フィルムでもよい。ケース5の外寸は約800×400mm、高さ600mm、成膜用の窓6は100×500mmの大きさである。
【0018】
図1は、本発明の製造装置の構成を示す模式平面図である。中央に共通真空室9があり、その周りに準備室5、前処理室6、電極成膜室7、半導体層成膜室8が配置されている。共通真空室9内にはまた、ロールカセット4を各室に挿入、引出しのための移動装置14が備えられている。
ロールカセット4は先ず準備室5に入れられ、真空引きを行った後、共通真空室9に入れられる。したがって、共通真空室9の真空は破られず、大気による汚染が避けられる。ロールカセット4は次に、前処理室6に移動される。ここで、フィルム基板のプラズマ処理および真空加熱処理が施される。アルゴンガスまたはアルゴンガスと酸素との混合ガスのプラズマ中にフィルム基板2を曝すことによって、フィルム基板2表面の清浄化、活性化がなされる。また、約300℃の真空熱処理によって、フィルム基板1表面の吸着ガス等の脱離がおこなわれる。次に、電極成膜室7、更に例えばa−Siからなる発電層形成のための半導体層成膜室8に順番に移動され、大気に暴露せずに積層構造を形成することができる。電極成膜室7および半導体層成膜室8が複数設けられているのは、膜厚の厚い膜を形成するためと、ドーピングガス等を変えて、例えばpinのような多層構造を形成するためである。電極としては、必ずしも金属からなる電極に限らず、酸化インジウム錫(ITO)のような透明電極をも含む。
【0019】
以上のように、各電極成膜室7および半導体層成膜室8が独立に稼働されるため、各層の成膜条件が大きく異なっていても積層構造が容易に形成できる。特に電極形成には、1Pa以上の高真空度でおこなうスパッタリングが望ましいが、そのような高真空度でおこなう電極成膜室7を、より低真空度の化学気相成長法により成膜をおこなう半導体層成膜室8と混在させて設置することができる。
【0020】
また各半導体層成膜室8が独立しているため、原料ガスの他の成膜室への混入により引き起こされる特性劣化を防止できる。その結果、素子界面構造や特性の改善がなされ、性能の優れた光電変換素子を製造することができる。本発明の製造方法により製造した太陽電池では、先に述べたステッピングロールプロセス並の変換効率 8.2%が得られた。
【0021】
各成膜室内での成膜は、ロールツーロールプロセスと同等なので、一次元的に(フィルム基板幅方向の)均一放電を実現することにより、優れた均一成膜が可能であり、均一性が良いことは勿論である。例えば1ロールカセット約400mにわたり膜厚は、約3%以内に入っていた。ステッピングロールプロセスでは一成膜面での膜厚分布が約6%であったのに比べ、大幅な改善がなされていることがわかる。このように放電の均一性が得やすいことから、大面積化に非常に有利なプロセスとなる。
【0022】
このロールカセットを用いた製造装置は量産性の高い装置となるが、特に、他の成膜室は運転したまま成膜室を独立にクリーニングおよびメンテナンスできるといった長所があり、メンテナンス等による装置稼働ロス時間を大幅に削減できる。
このロールカセット4を、上に示した製造方法による積層構造の形成のみならず、そのまま更にモジュール化装置にも適用することもできる。
【0023】
上の実施例では、巻き取り軸が2本のロールカセットの場合を示した。このロールカセットでは、どちらの巻き取り軸にフィルム基板が巻かれていても、成膜やロールカセットの取り出しが可能である。
これに対し、巻き取り軸が1本だけで、フィルム基板の一方の端をロールカセット外に出したロールカセットも考えられる。その場合は、成膜室にも巻き取り軸を設けておき、その成膜室の巻き取り軸にフィルム基板を巻き取りながら成膜を行う。但し、成膜後、ロールカセットの巻き取り軸に巻き戻さなければならない。
【0024】
[実施例2]
図3は、本発明の別の製造装置の構成を示す模式平面図である。準備室5、前処理室6、電極成膜室7、半導体層成膜室8が直列に配置され、更に取り出し室10が設けられている。この場合は、ロールカセット4を移送する移動装置は、図示していないが各反応室内に設けられている。
【0025】
やはり、準備室5に挿入して、真空置換をおこなった後、前処理室6に移送してプラズマ処理、熱処理を施した後、電極成膜室7に導入され、電極が形成される。更に半導体層成膜室8に移送され、プラズマCVD法により半導体層が形成される。ロールカセット4は順次成膜と、次成膜室への移動とを繰り返し、積層構造を構成することになる。最後に取り出し室10に移送され、大気中に取り出される。
【0026】
この製造装置においても、各電極成膜室7および半導体層成膜室8が独立に稼働されるため、各層の成膜条件が大きく異なっていても積層構造が容易に形成できる。電極形成には、スパッタリング法の成膜室を設けることができる。
また各半導体層成膜室8が独立しているため、原料ガスの他の成膜室への混入により引き起こされる特性劣化を防ぎ、性能の優れた光電変換素子を製造することができる。各成膜室内での成膜は、ロールツーロールプロセスと同様なので、均一性が良いことは勿論である。
【0027】
このロールカセットを用いた製造装置は量産性の高い装置となる。
【0028】
【発明の効果】
以上説明したように本発明によれば、可撓性フィルム基板を用いた薄膜光電変換素子の製造法方法において、可撓性フィルム基板を巻いたロールを有するロールカセットを単位として製造装置の前処理室に装着し、電極成膜室あるいは半導体層成膜室へと順次送り込んで行き、大気暴露無しで積層構造を形成して薄膜光電変換素子とすることにより、ロールツーロールプロセスの持つ優れた均一成膜性と、ステッピングロールプロセスの持つ成膜室の独立稼働という長所をともに併せ持つ製造方法および製造装置を提供する。
【0029】
すなわち、各成膜室は真空的に完全に分離されるため、成膜条件の全く異なる工程の接続および、他の成膜室からの原料ガスの拡散防止ができ、素子界面構造や特性の改善がなされ、更に、1次元的に(フィルム基板幅方向の)均一放電のみが達成され大面積均一成膜を同時に達成することが可能となる。
【図面の簡単な説明】
【図1】本発明による製造装置の模式平面図
【図2】本発明の製造方法に用いる可撓性フィルム基板搬送用のロールカセットの斜視図
【図3】本発明による別の製造装置の模式平面図
【符号の説明】
1 可撓性フィルム基板
2 ロール
3 処理用窓
3a 裏面用窓
4 ロールカセット
5 準備室
6 前処理室
7 電極成膜室
8 半導体層成膜室
9 共通真空室
10 取り出し室
11 巻き取り軸
12 ケース
13 突起
14 移動装置
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for manufacturing a thin-film photovoltaic element such as a solar cell using a flexible film substrate.
[0002]
[Prior art]
One of the typical thin film photovoltaic elements is an amorphous silicon (hereinafter abbreviated as a-Si) solar cell. This solar cell is generally formed by laminating a metal electrode layer, an a-Si layer as a power generation layer, a transparent electrode layer, and the like on a flexible film substrate. At present, issues relating to a-Si solar cells include lower cost and higher efficiency.
[0003]
Mass production is very effective for cost reduction. As a manufacturing method for improving mass productivity, for example, Suzuki, K .; Et al., "Technical Digest of the International PVSEC-1 (1984) p. 191" or Ovshinsky, S.M. R. By p. 577. The method is a method in which a strip-shaped film substrate is rolled into a loading chamber, a thin film photoelectric conversion element having a multilayer structure is continuously formed through a plurality of reaction chambers, and is rolled out in a loading chamber. This is called a roll-to-roll process. The roll-to-roll process is an excellent manufacturing method capable of forming a film with good uniformity on a long belt-like film substrate under a certain condition.
[0004]
As a method other than the roll-to-roll process, see Ichikawa, Y .; Devised a stepping roll process in “IEEE 1st World Conference on Photovoltaic Energy Conversion (1994) p. 441”. In this method, there are a plurality of independent film forming chambers having a movable heater and a frame in a common vacuum chamber, and in each of the film forming chambers, a flexible film substrate is sandwiched between the frames to perform vacuum sealing. To form a film. After film formation, the film substrate is transported intermittently (steps) like a one-frame or one-frame photo film to build a laminated structure.
[0005]
[Problems to be solved by the invention]
However, in the roll-to-roll process, although the film thickness and the film quality are good because the continuous film formation is performed, a manufacturing apparatus having a structure in which a plurality of film formation chambers are connected is used, and a film substrate for passing the film substrate therebetween is used. Due to the openings, it is impossible to continuously perform steps having greatly different conditions such as the degree of vacuum. In addition, there is a problem that a source gas (particularly a doping gas) introduced into a certain film formation chamber is mixed into another film formation chamber and causes deterioration of solar cell characteristics.
[0006]
On the other hand, in the stepping roll process, it is possible to independently control so-called film forming conditions such as a source gas type and a pressure in each film forming chamber. Therefore, it is possible to solve the problem of mixing the raw material gas into another film formation chamber without impairing mass productivity. In addition, it is possible to install the film forming mechanisms of the chemical vapor deposition method and the sputtering method, which have completely different film forming conditions, in the same vacuum chamber, and the power generation layer and the electrode layer can be formed in the same apparatus. The modification of the electrode layer interface structure has been achieved. For example, in a solar cell manufactured by a roll-to-roll process, the fill factor was 0.54 and the conversion efficiency was 7.2%, whereas in a solar cell manufactured by a stepping roll process, the fill factor was , 0.62, and a conversion efficiency of 8.1%.
[0007]
However, the stepping roll process has the following problems due to the operation of pinching the film by the movable heater.
One is that film formation must be performed at once in a large portion (one unit) of a film formation chamber surrounded by a movable heater and a frame. It is very difficult to form a uniform film over a large area, and the film forming conditions and the like tend to be limited.
[0008]
The other is a film sandwiching portion, where a minute film deformation occurs due to thermal expansion of the film substrate or the like, causing unevenness in film thickness and film quality in this portion.
These problems become more prominent as the area is increased. In addition, the unevenness of each layer of the solar cell also affects the characteristics of the solar cell. Therefore, in order to obtain a solar cell having a large area and excellent characteristics, more and more uniform film formation is important.
[0009]
In view of the above problems, an object of the present invention is to provide a manufacturing method and a manufacturing apparatus having both the excellent uniform film forming property of a roll-to-roll process and the advantage of independent operation of a film forming chamber of a stepping roll process. It is in.
[0010]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the present invention provides a thin film photoelectric conversion element in which a plurality of thin films having different properties are continuously laminated on a belt-shaped flexible film substrate while transporting the substrate to form a photoelectric conversion layer. In the manufacturing method, a laminated film is formed while using a cassette having at least one roll wound with a flexible film substrate, and sequentially mounting and detaching the cassette in independent film forming chambers for forming each layer. It shall be.
[0011]
By doing so, since each film is formed by a roll-to-roll process and in a film forming chamber independent of each other, it is possible to prevent the raw material gas from being mixed into another film forming chamber.
The manufacturing apparatus includes a cassette having at least one roll wound with a flexible film substrate, a plurality of independent film forming chambers for forming each layer, and the cassette is sequentially mounted and demounted in each film forming chamber. And moving means for performing the operation.
[0012]
By doing so, a film can be formed by a roll-to-roll process in a plurality of independent film forming chambers, and the stacked film can be formed by transferring between the film forming chambers by the moving means.
In particular, it is preferable that the cassette has two winding shafts.
As long as it has two winding shafts, there is no need to provide a roll on the film forming chamber side, and a drive device is sufficient.
[0013]
Each of the film forming chambers may be arranged around a common vacuum chamber provided with the cassette moving means, or each of the film forming chambers may be arranged in series.
If each of the film forming chambers is arranged around the common vacuum chamber provided with the moving means, cassettes can be transferred between the common vacuum chamber and each of the film forming chambers. Sex can be maintained. In addition, even when the respective film forming chambers are arranged in series, if the cassette is transferred between the adjacent film forming chambers except during the film forming, the independence between the film forming chambers can be maintained.
[0014]
Further, a film formation chamber formed by a chemical vapor deposition method and a film formation chamber formed by a sputtering method are provided.
The chemical vapor deposition method is a film forming method most suitable for forming a photoelectric conversion layer, and the sputtering method is a film forming method most suitable for forming an electrode film, and it is important to provide both methods.
Further, a pretreatment chamber for performing plasma treatment and vacuum heating treatment of the substrate is provided.
[0015]
Plasma treatment and vacuum heat treatment are extremely important in cleaning the substrate surface and forming a high-quality film.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
In order to solve the above-mentioned problems, the present invention provides a film forming method and a film forming apparatus capable of completely suppressing mutual diffusion of source gases between film forming chambers while performing all film forming by a uniform roll-to-roll process. Is devised. Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[Example 1]
FIG. 2 is a perspective view of the transport cassette 4 for transporting the flexible film substrate 1 used in the manufacturing apparatus of the present invention. Reference numeral 2 denotes a roll around which the flexible film substrate 1 is wound around a winding shaft 11. Reference numeral 12 denotes a case for holding two rolls 2, and a window 3 is provided in a portion corresponding to a film forming position of the flexible film substrate 1. Reference numeral 13 denotes a projection for rotating the winding shaft 11. A window 3a for inserting an electrode or the like at the time of film formation is also provided behind the case 12.
[0017]
As the flexible film substrate 1, a resin film such as aramid, polyether sulfone (PES), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), or polyimide is used. Depending on the structure, a metal film may be used. The outer dimensions of the case 5 are about 800 × 400 mm, the height is 600 mm, and the window 6 for film formation is 100 × 500 mm.
[0018]
FIG. 1 is a schematic plan view showing the configuration of the manufacturing apparatus of the present invention. There is a common vacuum chamber 9 at the center, around which a preparation chamber 5, a pretreatment chamber 6, an electrode film formation chamber 7, and a semiconductor layer film formation chamber 8 are arranged. The common vacuum chamber 9 is also provided with a moving device 14 for inserting and withdrawing the roll cassette 4 into each chamber.
The roll cassette 4 is first placed in the preparation chamber 5, evacuated, and then placed in the common vacuum chamber 9. Therefore, the vacuum in the common vacuum chamber 9 is not broken, and contamination by the atmosphere can be avoided. Next, the roll cassette 4 is moved to the pre-processing chamber 6. Here, plasma processing and vacuum heating processing of the film substrate are performed. By exposing the film substrate 2 to plasma of argon gas or a mixed gas of argon gas and oxygen, the surface of the film substrate 2 is cleaned and activated. In addition, desorption of the adsorbed gas and the like on the surface of the film substrate 1 is performed by the vacuum heat treatment at about 300 ° C. Next, the layers are sequentially moved to the electrode film forming chamber 7 and further to the semiconductor layer film forming chamber 8 for forming a power generation layer made of, for example, a-Si, so that a laminated structure can be formed without exposure to the atmosphere. The plurality of electrode film forming chambers 7 and the plurality of semiconductor film forming chambers 8 are provided for forming a thick film and for forming a multilayer structure such as a pin by changing a doping gas or the like. It is. The electrodes are not limited to electrodes made of metal, and include transparent electrodes such as indium tin oxide (ITO).
[0019]
As described above, since each of the electrode film forming chambers 7 and the semiconductor layer film forming chamber 8 are operated independently, a laminated structure can be easily formed even when the film forming conditions of each layer are largely different. In particular, for electrode formation, sputtering performed at a high vacuum of 1 Pa or more is desirable. However, the electrode film forming chamber 7 performed at such a high vacuum is preferably a semiconductor formed by a chemical vapor deposition method at a lower vacuum. It can be installed together with the layer deposition chamber 8.
[0020]
In addition, since each semiconductor layer film forming chamber 8 is independent, it is possible to prevent characteristic deterioration caused by mixing of the source gas into another film forming chamber. As a result, the element interface structure and characteristics are improved, and a photoelectric conversion element having excellent performance can be manufactured. In the solar cell manufactured by the manufacturing method of the present invention, a conversion efficiency of 8.2% equivalent to that of the stepping roll process described above was obtained.
[0021]
Since film formation in each film forming chamber is equivalent to a roll-to-roll process, excellent uniform film formation is possible by achieving one-dimensional uniform discharge (in the width direction of the film substrate), and uniformity is achieved. The good thing is, of course. For example, the film thickness was within about 3% over about 400 m of one roll cassette. It can be seen that in the stepping roll process, the film thickness distribution on one film forming surface is about 6%, which is a great improvement. Since uniformity of discharge is easily obtained in this way, it is a very advantageous process for increasing the area.
[0022]
Although the manufacturing apparatus using this roll cassette is a highly productive apparatus, it has the advantage that the film forming chamber can be independently cleaned and maintained while the other film forming chambers are in operation. Time can be greatly reduced.
This roll cassette 4 can be applied not only to the formation of a laminated structure by the above-described manufacturing method but also to a modular device as it is.
[0023]
In the above embodiment, the case where the take-up shaft is two roll cassettes has been described. In this roll cassette, film formation and take-out of the roll cassette are possible regardless of which winding shaft the film substrate is wound on.
On the other hand, a roll cassette in which only one winding shaft is used and one end of the film substrate is taken out of the roll cassette is also conceivable. In that case, a winding shaft is also provided in the film forming chamber, and the film is formed while winding the film substrate around the winding shaft in the film forming chamber. However, after film formation, the film must be rewound on the winding shaft of the roll cassette.
[0024]
[Example 2]
FIG. 3 is a schematic plan view showing the configuration of another manufacturing apparatus of the present invention. A preparation room 5, a pretreatment room 6, an electrode film formation room 7, and a semiconductor layer film formation room 8 are arranged in series, and a take-out room 10 is further provided. In this case, although not shown, a moving device for transferring the roll cassette 4 is provided in each reaction chamber.
[0025]
After being inserted into the preparation chamber 5 and subjected to vacuum replacement, it is transferred to the pre-processing chamber 6 and subjected to plasma processing and heat treatment, and then introduced into the electrode film formation chamber 7 to form electrodes. Further, the semiconductor layer is transferred to the semiconductor layer deposition chamber 8 and a semiconductor layer is formed by the plasma CVD method. The roll cassette 4 repeats the sequential film formation and the movement to the next film formation chamber to form a laminated structure. Finally, it is transferred to the take-out chamber 10 and taken out into the atmosphere.
[0026]
Also in this manufacturing apparatus, since the electrode film forming chamber 7 and the semiconductor layer film forming chamber 8 are operated independently, a laminated structure can be easily formed even if the film forming conditions of each layer are largely different. For electrode formation, a film formation chamber by a sputtering method can be provided.
Further, since each semiconductor layer film forming chamber 8 is independent, deterioration of characteristics caused by mixing of the source gas into another film forming chamber can be prevented, and a photoelectric conversion element having excellent performance can be manufactured. Since the film formation in each film formation chamber is the same as the roll-to-roll process, it is needless to say that the uniformity is good.
[0027]
A manufacturing apparatus using this roll cassette is an apparatus having high productivity.
[0028]
【The invention's effect】
As described above, according to the present invention, in a method of manufacturing a thin film photoelectric conversion element using a flexible film substrate, a pretreatment of a manufacturing apparatus is performed using a roll cassette having a roll around which the flexible film substrate is wound as a unit. It is installed in a chamber and sequentially sent to the electrode deposition chamber or the semiconductor layer deposition chamber, and forms a laminated structure without exposure to the atmosphere to form a thin-film photoelectric conversion element. Provided are a manufacturing method and a manufacturing apparatus which have both advantages of film forming property and independent operation of a film forming chamber of a stepping roll process.
[0029]
In other words, since each deposition chamber is completely separated in vacuum, it is possible to connect processes having completely different deposition conditions and to prevent diffusion of source gas from other deposition chambers, thereby improving the element interface structure and characteristics. In addition, only one-dimensional uniform discharge (in the width direction of the film substrate) is achieved, and large area uniform film formation can be achieved at the same time.
[Brief description of the drawings]
FIG. 1 is a schematic plan view of a manufacturing apparatus according to the present invention. FIG. 2 is a perspective view of a roll cassette for transporting a flexible film substrate used in the manufacturing method of the present invention. FIG. 3 is a schematic view of another manufacturing apparatus according to the present invention. Plan view [Explanation of reference numerals]
DESCRIPTION OF SYMBOLS 1 Flexible film substrate 2 Roll 3 Processing window 3a Backside window 4 Roll cassette 5 Preparation room 6 Pretreatment room 7 Electrode film formation room 8 Semiconductor layer film formation room 9 Common vacuum room 10 Extraction room 11 Winding shaft 12 Case 13 Projection 14 Moving device

Claims (7)

帯状の可撓性フィルム基板の上に、複数の異なる性質の薄膜を基板を搬送しながら連続的に積層して、光電変換層を形成する薄膜光電変換素子の製造方法において、可撓性フィルム基板を巻いた少なくとも一つのロールを有するカセットを用い、そのカセットを各層を形成するための互いに独立した成膜室に順次装着および脱着をしながら、積層膜を形成することを特徴とする薄膜光電変換素子の製造方法。A method for manufacturing a thin-film photoelectric conversion element, in which a plurality of thin films having different properties are continuously laminated on a belt-shaped flexible film substrate while transporting the substrate to form a photoelectric conversion layer, the flexible film substrate Using a cassette having at least one roll wound with a cassette, and sequentially mounting and detaching the cassette in independent film forming chambers for forming each layer, and forming a stacked film, Device manufacturing method. 帯状の可撓性フィルム基板の上に、複数の異なる性質の薄膜を基板を搬送しながら連続的に積層して、光電変換層を形成する薄膜光電変換素子の製造装置において、可撓性フィルム基板を巻いた少なくとも一つのロールを有するカセットと、各層を形成するための互いに独立した複数の成膜室と、そのカセットを各成膜室に順次装着および脱着する移動手段とを備えることを特徴とする薄膜光電変換素子の製造装置。In a manufacturing apparatus of a thin film photoelectric conversion element for forming a photoelectric conversion layer by continuously laminating a plurality of thin films having different properties on a belt-shaped flexible film substrate while transporting the substrate, the flexible film substrate A cassette having at least one roll wound thereon, a plurality of independent film forming chambers for forming each layer, and moving means for sequentially attaching and detaching the cassette to and from each film forming chamber. For manufacturing thin film photoelectric conversion elements. カセットが二つの巻き取り軸を有するものであることを特徴とする請求項2に記載の薄膜光電変換素子の製造装置。3. The apparatus according to claim 2, wherein the cassette has two winding shafts. 各成膜室が、前記カセットの移動手段を備えた共通真空室の周りに配置されることを特徴とする請求項2または3に記載の薄膜光電変換素子の製造装置。4. The apparatus according to claim 2, wherein each of the film forming chambers is arranged around a common vacuum chamber provided with a moving unit of the cassette. 5. 各成膜室が、直列に配置されることを特徴とする請求項2または3に記載の薄膜光電変換素子の製造装置。The apparatus according to claim 2, wherein each of the film forming chambers is arranged in series. 層形成の方法として、化学気相成長法による成膜室とスパッタリング法による成膜室とを備えることを特徴とする請求項4または5に記載の薄膜光電変換素子の製造装置。The apparatus for manufacturing a thin-film photoelectric conversion device according to claim 4, wherein a film formation chamber formed by a chemical vapor deposition method and a film formation chamber formed by a sputtering method are provided as a method of forming a layer. 基板のプラズマ処理および真空加熱処理をおこなう前処理室を有することを特徴とする請求項6記載の薄膜光電変換素子の製造装置。7. The apparatus according to claim 6, further comprising a pre-processing chamber for performing plasma processing and vacuum heating processing of the substrate.
JP30614296A 1996-11-18 1996-11-18 Method and apparatus for manufacturing thin film photoelectric conversion element Expired - Fee Related JP3560109B2 (en)

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