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JP3564938B2 - Method and apparatus for manufacturing thin-film solar cell - Google Patents
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JP3564938B2 - Method and apparatus for manufacturing thin-film solar cell - Google Patents

Method and apparatus for manufacturing thin-film solar cell Download PDF

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JP3564938B2
JP3564938B2 JP10413097A JP10413097A JP3564938B2 JP 3564938 B2 JP3564938 B2 JP 3564938B2 JP 10413097 A JP10413097 A JP 10413097A JP 10413097 A JP10413097 A JP 10413097A JP 3564938 B2 JP3564938 B2 JP 3564938B2
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electrode layer
substrate
hole
solar cell
punch
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JPH10294479A (en
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広喜 佐藤
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Fuji Electric Co Ltd
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Fuji Electric Holdings Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/50Photovoltaic [PV] energy

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Description

【0001】
【発明の属する技術分野】
本発明は、プラスチックフィルムなどの可撓性基板上に光電変換層が形成されてなり、基板の貫通孔を通して表裏の電極の接続が行われる薄膜太陽電池の製造方法および製造装置に関する。
【0002】
【従来の技術】
プラスチックフィルムなどの可撓性基板上に薄膜太陽電池を形成する場合には、基板の太陽電池の反対側面 (裏面とする) にも電極を配置し、基板を貫通して接続することにより、基板面積に対する太陽電池面積の比を大きくすることができる等の特長を持たせることができる。
【0003】
図6は裏面に電極を有する太陽電池の平面図である。図7は裏面に電極を有する太陽電池の製造工程順の図6におけるXX断面図であり、 (a) は接続開孔、(b) は第1電極層と第2電極層成膜、 (c) は集電開孔、 (d) は光電変換層成膜、 (e) は第3電極層成膜、 (f) は第4電極層成膜、 (g) は切断部を示す図である。図7では、分図符号と工程符号を同一としてある。可撓性で絶縁性の基板1aは、ポリイミド系のフィルムで厚さは50μm であるが、フィルムとしてはポリエチレンナフタレート (PEN) 、ポリエーテルサルフォン (PES) 、ポリエチレンテレフタレート (PET) またはアラミド系のフィルム等を用いることができる。この基板1aの所定位置に複数個の接続孔h1を開ける (工程 (a))。接続孔h1の直径は1mmのオーダーである。次に、基板1aの上に、第1電極層1b( この面を表面とする) 、それと反対側である裏面に第2電極層1cを順次成膜する。第1電極層1bと第2電極層1cの成膜順は逆でもよい。このとき、接続孔h1の内面で第1電極層1bと第2電極層2cとが重なり、互いに導通する (工程 (b))。これら電極層としては、Agを数100nmの厚さにスパッタにより形成してある。Al、Cu、Ti等の金属をスパッタまたは電子ビーム蒸着等により成膜しても良く、金属酸化膜と金属の多層膜を電極層として形成しても良い。
【0004】
次に、再び複数個の集電孔h2を基板に開孔する( 工程 (c))。
次に、光電変換層1dを成膜する。光電変換層1dは薄膜半導体層であり、a−Si(アモルファスシリコン)はその代表例である (工程 (d))。
次に、光電変換層1dの上に、第3電極層1eとして透明電極層を形成する。この工程を経て、例えば太陽電池に必要な層が全て積層される。透明電極層としてITO(インジウムスズオキサイド)、SnO、ZnOなどの酸化物導電層を用いるのが一般的である。膜形成時に接続孔h1の周縁部をマスクで覆うなどして初めに形成した接続孔h1部分には膜が形成されないようにする (工程 (e))。
【0005】
次に、裏面に金属膜などの低抵抗導電膜からなる第4電極層1fを成膜する。この工程により、集電孔h2の内面で第3電極層1eと第4電極層1fとが重なり、互いに導通させることができる( 工程 (f))。
以上の成膜工程の終了後、基板両面の積層を所定の形状に切断し、ユニットセルの多段直列接続からなる太陽電池を形成する (工程 (g))。図7 (g) では太陽電池が光照射され発電しているときに同じ電位となる電極層に同じハッチングを施してある。ユニットセルUは集電孔h2のみを有するように、切断部1gにより切断されており、集電孔h2においてのみ第3電極層1eと裏側面の第4電極層1fと接続されている。一方、接続孔と1つのユニットセル中の集電孔とを有するように切断部1hにより切断されて裏面電極Eが形成される。接続孔h1においてはユニットセルUの下部電極 (第1電極層1b) と裏面電極E (第2電極層1cと第4電極層1fの2重層) とが接続されている。従って、任意のユニットセルUに隣接し合う裏面電極En−1,n と裏面電極En,n+1 はEn−1,n −U−En,n+1 なる直列接続をなし、所定の多段直列接続された太陽電池を形成することができる。
【0006】
【発明が解決しようとする課題】
上記の開孔工程 (工程 (a) および工程 (b))において、従来は、パンチを用いる打ち抜き加工またはレーザー光などのエネルギービームを用いるレーザー加工によっていた。しかし、レーザー加工においては、YAG レーザーなど赤外レーザーの場合は熱加工であるため、熱による凹凸が孔の内面と周縁に形成され、電極層が分離してしまうことがあった。一方、エキシマレーザーなど短波長レーザーの場合は凹凸の形成されない加工が可能ではあるが、量産性に劣り、運転コストが高いことなどから適用が困難であった。
【0007】
パンチを用いた打ち抜き加工においては、発明者らは量産性に富む連続開孔加工方法を既に提案した。図8は薄膜太陽電池の製造装置における開孔装置の断面模式図である。巻き出しロールR1から送りだされた基板1aは、順次、位置検出開孔部P3、集電開孔部P2および接続開孔部P1で所定位置に所定数の位置検出孔、集電孔および接続孔を開けられ、洗浄装置で洗浄された後、巻き取りロールR2に巻き取られる。各種の孔位置に対応して基板1aの搬送方向および搬送距離を任意に制御される。
【0008】
図9は従来の開孔装置の開孔部の拡大断面模式図である。開孔部は断面が基板の孔形状のポンチPと、ポンチPと同じ断面形状の開孔部を有するストリッパープレートPsと同じ開口部を有するダイDからなっている。ダイDとストリッパープレートPsの上に搬送され停止した基板1aをストリッパープレートPsが押さえてから、ポンチPが基板1aを打ち抜き(貫通し)、基板1aに孔が開けられる。
【0009】
しかし、上記のパンチによる開孔では、孔の基板のダイ側に円周方向の溝が形成され、第2電極層および第4電極層が溝を被覆できず切れ目を生じ、孔を介した第1電極層と第2電極層、あるいは第3電極層と第4電極層の接続抵抗が著しく高くなることがあった。その結果、太陽電池の曲線因子が低下し、出力低下を来していた。
【0010】
本発明の目的は、上記の問題点に鑑み、接続孔や集電孔での接続抵抗は低く、太陽電池特性の良好な薄膜太陽電池を製造でき、量産性に富む薄膜太陽電池の製造方法を提供することにある。
【0011】
【課題を解決するための手段】
上述の目的を達成するために、絶縁性で可撓性の基板の一面上に光電変換層を挟んで基板側に第1電極層、反対側に透明な第3電極層が設けられており、前記第1電極層は基板の他面上に形成されている第2電極層と基板を貫通する接続孔の内面で接続され、前記第3電極層は基板の他面上に形成されている第4電極層と基板を貫通する集電孔の内面で接続されている薄膜太陽電池の製造方法であって、前記接続孔または集電孔の開孔がポンチとダイを用いる打ち抜き加工によってなされる薄膜太陽電池の製造方法において、前記ダイの前記基板に面する面とポンチの貫通する穴の内壁面とがなす稜にはRが付けられていることとする。
【0012】
前記Rは0.05mm以上0.2mm以下であると良い。
絶縁性で可撓性の基板の一面上に光電変換層を挟んで基板側に第1電極層、反対側に透明な第3電極層が設けられており、前記第1電極層は基板の他面上に形成されている第2電極層と基板を貫通する接続孔の内面で接続され、前記第3電極層は基板の他面上に形成されている第4電極層と基板を貫通する集電孔の内面で接続されている薄膜太陽電池の製造方法であって、前記接続孔または集電孔の開孔がポンチとダイを用いる剪断加工によってなされる薄膜太陽電池の製造方法において、前記ポンチの先端底面の形状はポンチの側面と垂直であり、打ち抜き方向に凹な円柱面であることとする。
【0013】
上記の薄膜太陽電池の製造装置であって、前記接続孔または集電孔の開孔を打ち抜き加工によって行うポンチとダイを備えた薄膜太陽電池の製造装置において、前記ダイの前記基板に面する面とポンチの貫通する穴の内壁面とがなす稜にはRが付けられていると良い。
前記Rは0.05mm以上0.2mm以下であると良い。
【0014】
上記の薄膜太陽電池の製造装置であって、前記接続孔または集電孔の開孔を打ち抜き加工によって行うポンチとダイを備えた薄膜太陽電池の製造装置において、前記ポンチの先端底面の形状はポンチの側面と垂直であり、打ち抜き方向に凹な曲柱面であると良い。
【0015】
【発明の実施の形態】
本発明は、次の実験事実を見いだしたことに基づいている。
従来の開孔装置の開孔部 (図9) において、ダイの穴内壁面と上面、およびポンチの側面と底面は、それぞれの面のなす稜は、切断が容易に行えるように、鋭く刃状に形成されている。そのため、比加工物は切断時には両面から同時に切れ目が入るが、切断穴径はポンチの径により定まる。そのため、ダイ側の切れ目は切断に至らず、切断穴の外側に断面が溝として残る。結局、電極層の被覆に切れ目が生じ、接続抵抗が低下する。
【0016】
本発明によれば、ダイの稜にRを付け丸くしたため、ダイ側の切れ目は生じず、電極層の被覆に切れ目は生じない。しかし、Rが大きくなると、いわゆるバリ(突起) が穴周縁部に生じ、以降の他のフィルムの密着を妨げるようになる。
また、ダイ側の稜が鋭くても、ポンチの底面を上側に凸な平行曲面 (最も単純な形状は円筒面) にすれば、ポンチの稜 (刃) は非加工物の切断線の一部にしか当たらないので、ダイの稜 (刃) は切断を開始せず、ダイ側の切れ目は生じず、電極層の被覆に切れ目は生じない。
実施例1
図1は本発明に係る開孔部の拡大断面模式図である。
【0017】
従来の開孔部と異なる点のみ説明する。ダイDの基板1aに面する面とポンチPの通過する孔の内壁面とがなす稜に丸みRを形成してある。
基板1aとしては、本実施例では膜厚50μm のポリイミドフィルムを用いたが、PEN 、PES 、PET またはポリイミドなどの絶縁性プラスチックフィルムを用いることも出来る。また、膜厚は実施例では50μm のものを用いたがこの厚さに限定されるものではない。
【0018】
図3は本発明の実施例における基板の位置検出用孔と接続孔の配置を示す平面図である。基板1aには位置検出用孔h3、接続孔h1の順に開孔される。位置検出用孔h3は太陽電池の所定のユニットのパターンの長さ間隔に開けられ、以降の搬送の位置決めに用いられる。
先ず、位置検出用孔h3を開け、以降基板1aを所定の距離づつ搬送して停止し、フィルムの幅方向に1回のポンチ操作で複数個の接続孔h1の列を形成した。これを所定の回数繰り返した後、位置検出用孔h3を開ける。この位置検出用孔h3の距離を1基本パターンの長さとしこの繰り返しにより長尺の基板1aに多数の基本パターンを形成することができる。開孔後、同一の装置内で粘着ロールまたは、非接触の超音波などによるブローにより基板1a表面を清浄にした。
【0019】
この面に第1電極層1b、およびそれと反対側の面に第2電極層1cとしてAgをスパッタにより数百nm厚で形成した(図7(c) 参照)。材料としては、この他AlやAg/ 透明導電層などの多層構造膜などを用いることができる。第1電極層1b、第2電極層1cどちらが先でもよいが、逆順が好ましい。
この後、同じ開孔装置に装着し、位置検出用孔h3を位置検出センサにより検知し停止した後、集電孔h2の列を所定数開けた。図4は本発明の実施例においてさらに集電孔が開けられた基板の平面図である。実施例では集電孔列の間隔を5mmとしたが、この間隔は太陽電池パターンにより任意の値とすることができる。
【0020】
なお、この場合の孔形状は必ずしも円である必要はなく、例えば太陽電池の特性を向上させるためには集電孔h2の面積は出来るだけ小さく、しかも周辺の長さが出来る限り長くなる形状が良い。
実施例中では、1 動作で基板幅方向に1 ラインの孔形成を行ったが、複数ライン数として、その量産性を向上させることができる。
【0021】
こうした工程を経たうえで、光電変換層1dとして薄膜半導体層を形成した。本実施例では通常のグロー放電分解法により堆積される水素化アモルファスシリコン(a−Si:H)系の材料を用いてn−i−p 接合を形成した(図7(d) 参照)。その上に第3電極層として透明電極層を形成した。この層にはITO 、ZnO などの酸化物導電膜を用いることができるが、本実施例ではスパッタによるITO 膜を成膜した(図7(e) 参照)。このとき、膜形成時にマスクで覆うなどして接続孔h1には膜が形成されないようにする。次に太陽電池を形成した面とは反対側の基板面に金属膜などからなる第4電極層を最終的に成膜した。本実施例中では材料としてNiを用いたが、Niに限定されるものではない。成膜方法はスパッタである(図7(f) 参照)。
【0022】
最後に、直列構造を形成するため、YAG レーザーにより、表面の第1電極層から第3電極層までの3層と、裏面の第2、第4電極層の2層を切断し、所定のパターンとした。(図7(g) 参照)。
このRの大きさの効果を調べるため、Rの異なるダイを用いて、接続孔の接続抵抗の変化を調べた。図2は本発明に係る接続抵抗のダイのR依存性を示すグラフである。カーブaがこの実施例1の接続抵抗である。カーブbは実施例2のカーブであり実施例2で説明する。従来は0.4ないし2.2Ωにばらつき、平均1.2オームであったが、本発明に係る場合はR=0.05mm以上でばらつきは0.2Ωの幅以内であり、平均値は0.2Ωと小さくほとんどRに依存していないことが判る。
【0023】
例えば、R=0.1mmの場合、太陽電池特性の曲線因子も従来は0.5程度だったものが0.6程度と向上することができた。
Rには他の理由による限界がある。Rが大きすぎると加工裏面側の突起となるバリが大きくなり過ぎてしまう。このバリは、太陽電池をモジュール化する場合に封止フィルムの密着を妨げ、光電変換特性や信頼性を損なうなどの問題が生じてくるで、Rは0.2mm程度以下が好ましい。
【0024】
また、接続直列用孔h1におけるほどはないが、集電用孔h2においても、同様の効果が得られる。
実施例2
この実施例はポンチの刃先角を鋭角にした場合である。図5は本発明に係る他の実施例の開孔部の拡大断面模式図である。
【0025】
ポンチPの先端底面の形状を、ポンチの側面と垂直であり、打ち抜き方向に凹な円柱面としてある。従って、ポンチの2つの最先端部の刃先角は鋭角であり、徐々に直角となっている。
このポンチと実施例1のダイを組み合わせて開孔部とした開孔装置を用いて、実施例1と同様に薄膜光電変換素子を作製し、接続孔の接続抵抗を調べた。接続抵抗の図2のカーブbである。この実施例の場合はR=0.05mm以上でばらつきは0.15Ω程度の幅以内であり、平均値は0.15Ωと小さくほとんどRに依存していないことが判る。
【0026】
太陽電池特性の曲線因子も実施例1と同様に改善された。
なお、従来のRのないダイとこの実施例のポンチとの組み合わせた開口部を用いても、接続孔の接続抵抗は低くなり、実用上は問題ないが、ばらつきがやゝ大きかった。
【0027】
【発明の効果】
本発明によれば、絶縁性で可撓性の基板の一面上に光電変換層を挟んで基板側に第1電極層、反対側に透明な第3電極層が設けられており、前記第1電極層は基板の他面上に形成されている第2電極層と基板を貫通する接続孔の内面で接続され、前記第3電極層は基板の他面上に形成されている第4電極層と基板を貫通する集電孔の内面で接続されている薄膜太陽電池の製造方法であって、前記接続孔または集電孔の開孔がポンチとダイを用いる打ち抜き加工によってなされる薄膜太陽電池の製造方法において、前記ダイの前記基板に面する面とポンチの貫通する穴の内壁面とがなす稜にRを付けたので、基板のダイ側には切れ目は入らず、電極層の被覆は損なわれなくなった。
【0028】
あるいは、上記の薄膜太陽電池の製造方法において、前記ポンチの先端底面の形状をポンチの側面と垂直であり、打ち抜き方向に凹な円柱面であることとしたため、開孔はポンチの先端から始まり徐々に進むので、孔周縁に溝は生じない。従って、接続孔や集電孔での接続抵抗は低く、その影響による曲線因子の低下もなく太陽電池特性の良好な薄膜太陽電池を製造できる。
【図面の簡単な説明】
【図1】本発明に係る実施例の開孔部の拡大断面模式図
【図2】本発明に係る接続抵抗のダイのR依存性を示すグラフ
【図3】本発明の実施例における基板の位置検出用孔と接続孔の配置を示す平面図
【図4】本発明の実施例においてさらに集電孔が開けられた基板の平面図
【図5】本発明に係る他の実施例の開孔部の拡大断面模式図
【図6】裏面に電極を有する太陽電池の平面図
【図7】裏面に電極を有する太陽電池の製造工程順の図6におけるXX断面図であり、(a) は接続開孔、 (b) は第1電極層と第2電極層成膜、 (c) は集電開孔、(d) は光電変換層成膜、 (e) は第3電極層成膜、 (f) は第4電極層成膜、(g) は切断部を示す図
【図8】薄膜太陽電池の製造装置における開孔装置の断面模式図
【図9】開孔装置の従来の開孔部の拡大断面模式図
【符号の説明】
1a 基板
h1 接続孔
h2 集電孔
h3 位置検出用孔
1b 第1電極層
1c 第2電極層
1d 光電変換層
1e 第3電極層
1f 第4電極層
1g 切断部
E 裏面電極
U ユニットセル
P1 接続孔開孔部
P2 集電孔開孔部
P3 位置検出用孔開孔部
P ポンチ
P1 ポンチ
D ダイ
D1 ダイ
Ps ストリッパープレート
R1 巻き出しロール
R2 巻き取りロール
W 洗浄部
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for manufacturing a thin film solar cell in which a photoelectric conversion layer is formed on a flexible substrate such as a plastic film, and front and back electrodes are connected through through holes in the substrate.
[0002]
[Prior art]
When a thin-film solar cell is formed on a flexible substrate such as a plastic film, electrodes are also arranged on the opposite side of the substrate (referred to as the back surface), and the substrate is connected by penetrating the substrate. Features such as an increase in the ratio of the solar cell area to the area can be provided.
[0003]
FIG. 6 is a plan view of a solar cell having electrodes on the back surface. 7A and 7B are sectional views taken along line XX in FIG. 6 in the order of the manufacturing process of the solar cell having an electrode on the back surface, wherein FIG. 7A is a connection opening, FIG. 7B is a first electrode layer and a second electrode layer, and FIG. ) Is a collector opening, (d) is a photoelectric conversion layer formed, (e) is a third electrode layer formed, (f) is a fourth electrode layer formed, and (g) is a view showing a cut portion. . In FIG. 7, the same reference numerals are used for the division marks and the step codes. The flexible and insulating substrate 1a is a polyimide-based film having a thickness of 50 μm, and the film may be made of polyethylene naphthalate (PEN), polyether sulfone (PES), polyethylene terephthalate (PET) or aramid. Film or the like can be used. A plurality of connection holes h1 are opened at predetermined positions on the substrate 1a (step (a)). The diameter of the connection hole h1 is on the order of 1 mm. Next, a first electrode layer 1b (this surface is defined as a front surface) is formed on the substrate 1a, and a second electrode layer 1c is sequentially formed on a rear surface opposite to the first electrode layer 1b. The order of forming the first electrode layer 1b and the second electrode layer 1c may be reversed. At this time, the first electrode layer 1b and the second electrode layer 2c overlap on the inner surface of the connection hole h1 and conduct with each other (step (b)). These electrode layers are formed by sputtering Ag to a thickness of several 100 nm. A metal such as Al, Cu, Ti or the like may be formed by sputtering or electron beam evaporation, or a multi-layered film of a metal oxide film and a metal may be formed as an electrode layer.
[0004]
Next, a plurality of current collecting holes h2 are formed in the substrate again (step (c)).
Next, the photoelectric conversion layer 1d is formed. The photoelectric conversion layer 1d is a thin film semiconductor layer, and a-Si (amorphous silicon) is a typical example (step (d)).
Next, a transparent electrode layer is formed as the third electrode layer 1e on the photoelectric conversion layer 1d. Through this step, for example, all layers necessary for the solar cell are stacked. Generally, an oxide conductive layer such as ITO (indium tin oxide), SnO 2 , ZnO is used as the transparent electrode layer. At the time of forming the film, the peripheral portion of the connection hole h1 is covered with a mask or the like so that the film is not formed on the connection hole h1 formed first (step (e)).
[0005]
Next, a fourth electrode layer 1f made of a low-resistance conductive film such as a metal film is formed on the back surface. By this step, the third electrode layer 1e and the fourth electrode layer 1f overlap with each other on the inner surface of the current collection hole h2 and can be electrically connected to each other (step (f)).
After the completion of the above film formation process, the laminate on both surfaces of the substrate is cut into a predetermined shape to form a solar cell including a multi-stage series connection of unit cells (step (g)). In FIG. 7 (g), the same hatching is applied to the electrode layers which have the same potential when the solar cell is irradiated with light to generate power. The unit cell U is cut by the cut portion 1g so as to have only the current collecting hole h2, and is connected to the third electrode layer 1e and the fourth electrode layer 1f on the rear side only at the current collecting hole h2. On the other hand, the back electrode E is formed by being cut by the cutting portion 1h so as to have the connection hole and the current collecting hole in one unit cell. In the connection hole h1, the lower electrode (the first electrode layer 1b) of the unit cell U and the back electrode E (the double layer of the second electrode layer 1c and the fourth electrode layer 1f) are connected. Thus, the back electrode E n-1 adjacent to an arbitrary unit cell U n, n and back electrode E n, n + 1 No E n-1, n -U n -E n, n + 1 becomes a series connection, a predetermined Multistage serially connected solar cells can be formed.
[0006]
[Problems to be solved by the invention]
Conventionally, in the hole forming step (step (a) and step (b)), punching using a punch or laser processing using an energy beam such as a laser beam has been performed. However, in the case of laser processing, since infrared processing such as a YAG laser is performed by thermal processing, unevenness due to heat may be formed on the inner surface and peripheral edge of the hole, and the electrode layer may be separated. On the other hand, in the case of a short-wavelength laser such as an excimer laser, processing without forming irregularities is possible, but it is difficult to apply because of poor mass productivity and high operation cost.
[0007]
In punching using a punch, the inventors have already proposed a continuous hole forming method that is rich in mass productivity. FIG. 8 is a schematic cross-sectional view of a hole opening device in the apparatus for manufacturing a thin-film solar cell. The substrate 1a sent out from the unwinding roll R1 is sequentially provided with a predetermined number of position detection holes, current collection holes, and connection at predetermined positions at the position detection opening P3, the current collection opening P2, and the connection opening P1. After a hole is formed and washed by a washing apparatus, the sheet is taken up by a take-up roll R2. The transport direction and transport distance of the substrate 1a are arbitrarily controlled corresponding to various hole positions.
[0008]
FIG. 9 is an enlarged schematic cross-sectional view of an opening portion of a conventional opening device. The opening portion includes a punch P having a hole shape in the cross section of the substrate and a die D having the same opening portion as the stripper plate Ps having an opening portion having the same cross-sectional shape as the punch P. After the stripper plate Ps presses the substrate 1a transported and stopped on the die D and the stripper plate Ps, the punch P punches (penetrates) the substrate 1a, and a hole is formed in the substrate 1a.
[0009]
However, in the opening by the above-mentioned punch, a circumferential groove is formed on the die side of the substrate of the hole, and the second electrode layer and the fourth electrode layer cannot cover the groove, so that a cut is formed. In some cases, the connection resistance between the first electrode layer and the second electrode layer or between the third electrode layer and the fourth electrode layer was significantly increased. As a result, the fill factor of the solar cell was reduced, and the output was reduced.
[0010]
In view of the above problems, an object of the present invention is to provide a method of manufacturing a thin film solar cell which has a low connection resistance at a connection hole or a current collection hole, can manufacture a thin film solar cell having good solar cell characteristics, and has high mass productivity. To provide.
[0011]
[Means for Solving the Problems]
In order to achieve the above object, a first electrode layer is provided on one surface of an insulating and flexible substrate with a photoelectric conversion layer interposed therebetween, and a transparent third electrode layer is provided on the opposite side, The first electrode layer is connected to a second electrode layer formed on the other surface of the substrate at an inner surface of a connection hole penetrating the substrate, and the third electrode layer is formed on the other surface of the substrate. A method for manufacturing a thin-film solar cell in which four electrode layers are connected to an inner surface of a current collecting hole penetrating a substrate, wherein the connection hole or the current collecting hole is formed by punching using a punch and a die. In the method of manufacturing a solar cell, it is assumed that a ridge formed by a surface of the die facing the substrate and an inner wall surface of a hole through which the punch has an R.
[0012]
R is preferably not less than 0.05 mm and not more than 0.2 mm.
A first electrode layer is provided on one surface of an insulating and flexible substrate with a photoelectric conversion layer interposed therebetween on the substrate side, and a transparent third electrode layer is provided on the other side, and the first electrode layer is provided on the other side of the substrate. The second electrode layer formed on the surface is connected to an inner surface of a connection hole penetrating the substrate, and the third electrode layer is connected to a fourth electrode layer formed on the other surface of the substrate and the collector penetrating the substrate. A method of manufacturing a thin-film solar cell connected on the inner surface of a hole, wherein the connection hole or the current collecting hole is formed by shearing using a punch and a die. The shape of the bottom surface of the tip is perpendicular to the side surface of the punch, and is a cylindrical surface that is concave in the punching direction.
[0013]
The manufacturing apparatus for a thin-film solar cell as described above, wherein in the manufacturing apparatus for a thin-film solar cell including a punch and a die for punching the connection hole or the current collecting hole by punching, a surface of the die facing the substrate. It is preferred that a ridge formed by the inner wall surface of the hole through which the punch penetrates is provided with an R.
R is preferably not less than 0.05 mm and not more than 0.2 mm.
[0014]
In the above thin film solar cell manufacturing apparatus, in the thin film solar cell manufacturing apparatus including a punch and a die for punching the connection hole or the current collecting hole by punching, the shape of the bottom surface of the tip of the punch is a punch. It is good to be a curved column surface which is perpendicular to the side surface and concave in the punching direction.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
The present invention is based on the finding of the following experimental facts.
In the opening part (Fig. 9) of the conventional opening device, the inner wall surface and the upper surface of the die, and the side surface and the bottom surface of the punch, the ridge formed by each surface is sharply shaped like a blade so that cutting can be easily performed. Is formed. Therefore, when the specific workpiece is cut at the same time, a cut is made from both sides, and the diameter of the cut hole is determined by the diameter of the punch. Therefore, the cut on the die side is not cut, and the cross section remains outside the cut hole as a groove. Eventually, a cut occurs in the coating of the electrode layer, and the connection resistance decreases.
[0016]
According to the present invention, since the edge of the die is rounded and rounded, no cut is formed on the die side, and no cut is generated in the coating of the electrode layer. However, when R becomes large, so-called burrs (protrusions) are formed on the periphery of the hole, which hinders the subsequent adhesion of other films.
Also, even if the ridge on the die side is sharp, if the bottom of the punch is a parallel curved surface that is convex upward (the simplest shape is a cylindrical surface), the ridge (blade) of the punch will be part of the cutting line of the non-workpiece. Therefore, the ridge (blade) of the die does not start cutting, no cut is formed on the die side, and no cut is formed in the coating of the electrode layer.
Example 1
FIG. 1 is an enlarged schematic cross-sectional view of an opening according to the present invention.
[0017]
Only different points from the conventional opening will be described. A radius R is formed at a ridge formed by a surface of the die D facing the substrate 1a and an inner wall surface of the hole through which the punch P passes.
In this embodiment, a polyimide film having a thickness of 50 μm is used as the substrate 1a, but an insulating plastic film such as PEN, PES, PET, or polyimide may be used. Further, in the embodiment, the film thickness is 50 μm, but is not limited to this thickness.
[0018]
FIG. 3 is a plan view showing the arrangement of the position detection holes and the connection holes of the substrate according to the embodiment of the present invention. A hole h3 for position detection and a connection hole h1 are formed in the substrate 1a in this order. The position detection holes h3 are formed at intervals of the pattern length of a predetermined unit of the solar cell, and are used for positioning of subsequent conveyance.
First, a hole h3 for position detection was opened, and thereafter, the substrate 1a was conveyed by a predetermined distance and stopped, and a row of a plurality of connection holes h1 was formed by one punch operation in the width direction of the film. After repeating this a predetermined number of times, the position detecting hole h3 is opened. The distance between the position detection holes h3 is set to the length of one basic pattern, and by repeating this, a large number of basic patterns can be formed on the long substrate 1a. After the opening, the surface of the substrate 1a was cleaned by blowing with an adhesive roll or non-contact ultrasonic waves in the same apparatus.
[0019]
A first electrode layer 1b was formed on this surface, and a second electrode layer 1c was formed on the surface opposite to the first electrode layer 1b with a thickness of several hundred nm by sputtering (see FIG. 7C). As a material, a multilayer structure film such as Al or Ag / transparent conductive layer can be used. Either the first electrode layer 1b or the second electrode layer 1c may be first, but the reverse order is preferred.
After that, it was mounted on the same opening apparatus, and after detecting and stopping the position detecting holes h3 by the position detecting sensor, a predetermined number of rows of the current collecting holes h2 were opened. FIG. 4 is a plan view of a substrate in which a current collecting hole is further formed in the embodiment of the present invention. In the embodiment, the interval between the current collecting hole arrays is set to 5 mm. However, the interval can be set to an arbitrary value depending on the solar cell pattern.
[0020]
In this case, the shape of the hole is not necessarily a circle. For example, in order to improve the characteristics of the solar cell, the shape of the current collecting hole h2 should be as small as possible, and the peripheral length should be as long as possible. good.
In the embodiment, one line of holes is formed in the substrate width direction by one operation. However, the number of lines can be increased to improve the mass productivity.
[0021]
After these steps, a thin film semiconductor layer was formed as the photoelectric conversion layer 1d. In this embodiment, an nip junction was formed using a hydrogenated amorphous silicon (a-Si: H) -based material deposited by a normal glow discharge decomposition method (see FIG. 7D). A transparent electrode layer was formed thereon as a third electrode layer. As this layer, an oxide conductive film such as ITO or ZnO can be used. In this embodiment, an ITO film is formed by sputtering (see FIG. 7E). At this time, a film is not formed in the connection hole h1 by, for example, covering with a mask when forming the film. Next, a fourth electrode layer made of a metal film or the like was finally formed on the substrate surface opposite to the surface on which the solar cells were formed. In this embodiment, Ni is used as a material, but the material is not limited to Ni. The film formation method is sputtering (see FIG. 7F).
[0022]
Finally, in order to form a series structure, the YAG laser is used to cut the three layers from the first electrode layer to the third electrode layer on the front surface and the two layers of the second and fourth electrode layers on the back surface, and to form a predetermined pattern. And (See FIG. 7 (g)).
In order to investigate the effect of the magnitude of R, a change in the connection resistance of the connection hole was examined using dies having different Rs. FIG. 2 is a graph showing the R dependence of the connection resistance according to the present invention. A curve a is the connection resistance of the first embodiment. A curve b is a curve of the second embodiment and will be described in the second embodiment. Conventionally, the dispersion varied from 0.4 to 2.2 Ω, and the average was 1.2 ohms. However, in the case of the present invention, R = 0.05 mm or more, the variation was within a width of 0.2 Ω, and the average was 0 Ω. It can be seen that the resistance value is as small as 0.2Ω and hardly depends on R.
[0023]
For example, when R = 0.1 mm, the fill factor of the solar cell characteristic was improved from about 0.5 in the past to about 0.6.
R has limitations for other reasons. If R is too large, burrs serving as projections on the processed back surface will be too large. These burrs hinder the adhesion of the sealing film when the solar cell is made into a module, causing problems such as impairing the photoelectric conversion characteristics and reliability. Therefore, R is preferably about 0.2 mm or less.
[0024]
Although not as large as in the connection series hole h1, the same effect can be obtained in the current collection hole h2.
Example 2
In this embodiment, the edge angle of the punch is set to an acute angle. FIG. 5 is an enlarged schematic cross-sectional view of an opening according to another embodiment of the present invention.
[0025]
The shape of the bottom surface of the tip of the punch P is perpendicular to the side surface of the punch and is a cylindrical surface that is concave in the punching direction. Therefore, the cutting edge angles at the two most distal end portions of the punch are acute angles and gradually become right angles.
A thin-film photoelectric conversion element was manufactured in the same manner as in Example 1 using an opening device in which the punch and the die of Example 1 were combined to form an opening, and the connection resistance of the connection hole was examined. It is a curve b of FIG. 2 of a connection resistance. In the case of this embodiment, the variation is within a width of about 0.15Ω when R = 0.05 mm or more, and the average value is as small as 0.15Ω and it is understood that the average value hardly depends on R.
[0026]
The fill factor of the solar cell characteristics was also improved as in Example 1.
In addition, even if an opening combining a conventional die without R and the punch of this embodiment was used, the connection resistance of the connection hole was low and there was no problem in practical use, but the variation was slightly large.
[0027]
【The invention's effect】
According to the present invention, the first electrode layer is provided on one side of the insulating and flexible substrate with the photoelectric conversion layer interposed therebetween on the substrate side, and the transparent third electrode layer is provided on the opposite side. The electrode layer is connected to a second electrode layer formed on the other surface of the substrate at an inner surface of a connection hole passing through the substrate, and the third electrode layer is formed on a fourth electrode layer formed on the other surface of the substrate. And a method of manufacturing a thin film solar cell connected at the inner surface of a current collecting hole penetrating the substrate, wherein the connection hole or the opening of the current collecting hole is formed by punching using a punch and a die. In the manufacturing method, since the edge formed by the surface of the die facing the substrate and the inner wall surface of the hole through which the punch is formed with R, no cut is made on the die side of the substrate, and the coating of the electrode layer is impaired. No longer.
[0028]
Alternatively, in the method for manufacturing a thin-film solar cell described above, since the shape of the bottom surface of the tip of the punch is perpendicular to the side surface of the punch and is a cylindrical surface that is concave in the punching direction, the opening gradually starts from the tip of the punch. Therefore, no groove is formed on the periphery of the hole. Therefore, the connection resistance at the connection hole or the current collection hole is low, and a thin-film solar cell having good solar cell characteristics can be manufactured without a decrease in the fill factor due to the influence.
[Brief description of the drawings]
FIG. 1 is an enlarged schematic cross-sectional view of an opening according to an embodiment of the present invention. FIG. 2 is a graph showing the R dependence of a connection resistance according to the present invention. FIG. FIG. 4 is a plan view showing an arrangement of a position detection hole and a connection hole. FIG. 4 is a plan view of a substrate in which a current collecting hole is further formed in the embodiment of the present invention. FIG. 5 is an opening of another embodiment according to the present invention. FIG. 6 is a plan view of a solar cell having an electrode on the back surface. FIG. 7 is a cross-sectional view taken along the line XX in FIG. 6 in the order of the manufacturing process of the solar cell having the electrode on the back surface. (B) is a first electrode layer and a second electrode layer, (c) is a current collecting aperture, (d) is a photoelectric conversion layer, (e) is a third electrode layer, f) shows the formation of the fourth electrode layer, and (g) shows the cut section. FIG. 8 is a schematic cross-sectional view of an opening apparatus in a thin-film solar cell manufacturing apparatus. Enlarged cross-sectional schematic view of a conventional opening of the REFERENCE NUMERALS]
1a Substrate h1 Connection hole h2 Current collection hole h3 Position detection hole 1b First electrode layer 1c Second electrode layer 1d Photoelectric conversion layer 1e Third electrode layer 1f Fourth electrode layer 1g Cutting portion E Back surface electrode U Unit cell P1 Connection hole Hole P2 Current collecting hole P3 Position detection hole P Punch P1 Punch D Die D1 Die Ps Stripper plate R1 Unwind roll R2 Take-up roll W Cleaning unit

Claims (6)

絶縁性で可撓性の基板の一面上に光電変換層を挟んで基板側に第1電極層、反対側に透明な第3電極層が設けられており、前記第1電極層は基板の他面上に形成されている第2電極層と基板を貫通する接続孔の内面で接続され、前記第3電極層は基板の他面上に形成されている第4電極層と基板を貫通する集電孔の内面で接続されている薄膜太陽電池の製造方法であって、前記接続孔または集電孔の開孔がポンチとダイを用いる打ち抜き加工によってなされる薄膜太陽電池の製造方法において、前記ダイの前記基板に面する面とポンチの貫通する穴の内壁面とがなす稜にはRが付けられていることを特徴とする薄膜太陽電池の製造方法。A first electrode layer is provided on one surface of an insulating and flexible substrate with a photoelectric conversion layer interposed therebetween on the substrate side, and a transparent third electrode layer is provided on the other side, and the first electrode layer is provided on the other side of the substrate. The second electrode layer formed on the surface is connected to an inner surface of a connection hole penetrating the substrate, and the third electrode layer is connected to a fourth electrode layer formed on the other surface of the substrate and the collector penetrating the substrate. A method of manufacturing a thin-film solar cell connected on the inner surface of a hole, wherein the connection hole or the current collecting hole is formed by punching using a punch and a die. A method for manufacturing a thin-film solar cell, characterized in that a ridge formed by the surface facing the substrate and the inner wall surface of the hole through which the punch is formed is rounded. 前記Rは0.05mm以上0.2mm以下であることを特徴とする請求項1に記載の薄膜太陽電池の製造方法。The method according to claim 1, wherein R is 0.05 mm or more and 0.2 mm or less. 絶縁性で可撓性の基板の一面上に光電変換層を挟んで基板側に第1電極層、反対側に透明な第3電極層が設けられており、前記第1電極層は基板の他面上に形成されている第2電極層と基板を貫通する接続孔の内面で接続され、前記第3電極層は基板の他面上に形成されている第4電極層と基板を貫通する集電孔の内面で接続されている薄膜太陽電池の製造方法であって、前記接続孔または集電孔の開孔がポンチとダイを用いる剪断加工によってなされる薄膜太陽電池の製造方法において、前記ポンチの先端底面の形状はポンチの側面と垂直であり、打ち抜き方向に凹な円柱面であることを特徴とする薄膜太陽電池の製造方法。A first electrode layer is provided on one surface of an insulating and flexible substrate with a photoelectric conversion layer interposed therebetween on the substrate side, and a transparent third electrode layer is provided on the other side, and the first electrode layer is provided on the other side of the substrate. The second electrode layer formed on the surface is connected to an inner surface of a connection hole penetrating the substrate, and the third electrode layer is connected to a fourth electrode layer formed on the other surface of the substrate and the collector penetrating the substrate. A method of manufacturing a thin-film solar cell connected on the inner surface of a hole, wherein the connection hole or the current collecting hole is formed by shearing using a punch and a die. The method of manufacturing a thin-film solar cell, wherein the shape of the bottom surface of the tip is perpendicular to the side surface of the punch and is a cylindrical surface that is concave in the punching direction. 請求項1に記載の薄膜太陽電池の製造装置であって、前記接続孔または集電孔の開孔を打ち抜き加工によって行うポンチとダイを備えた薄膜太陽電池の製造装置において、前記ダイの前記基板に面する面とポンチの貫通する穴の内壁面とがなす稜にはRが付けられていることを特徴とする薄膜太陽電池の製造装置。The apparatus for manufacturing a thin-film solar cell according to claim 1, further comprising: a punch and a die for punching an opening of the connection hole or the current collecting hole by punching. An apparatus for manufacturing a thin-film solar cell, characterized in that a ridge formed by a surface facing the surface and an inner wall surface of a hole through which the punch is formed is rounded. 前記Rは0.05mm以上0.2mm以下であることを特徴とする請求項4に記載の薄膜太陽電池の製造装置。The apparatus according to claim 4, wherein R is not less than 0.05 mm and not more than 0.2 mm. 請求項1に記載の薄膜太陽電池の製造装置であって、前記接続孔または集電孔の開孔を打ち抜き加工によって行うポンチとダイを備えた薄膜太陽電池の製造装置において、前記ポンチの先端底面の形状はポンチの側面と垂直であり、打ち抜き方向に凹な円柱面であることを特徴とする薄膜太陽電池の製造装置。The manufacturing apparatus of a thin film solar cell according to claim 1, further comprising a punch and a die for punching the connection hole or the current collecting hole by punching, and a bottom surface of a tip of the punch. The apparatus for manufacturing a thin-film solar cell according to claim 1, wherein the shape is perpendicular to the side surface of the punch and is a cylindrical surface that is concave in the punching direction.
JP10413097A 1997-04-22 1997-04-22 Method and apparatus for manufacturing thin-film solar cell Expired - Fee Related JP3564938B2 (en)

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