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JP3575342B2 - Method for manufacturing silica glass optical waveguide - Google Patents
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JP3575342B2 - Method for manufacturing silica glass optical waveguide - Google Patents

Method for manufacturing silica glass optical waveguide Download PDF

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Publication number
JP3575342B2
JP3575342B2 JP21746399A JP21746399A JP3575342B2 JP 3575342 B2 JP3575342 B2 JP 3575342B2 JP 21746399 A JP21746399 A JP 21746399A JP 21746399 A JP21746399 A JP 21746399A JP 3575342 B2 JP3575342 B2 JP 3575342B2
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Prior art keywords
core
waveguide
optical waveguide
temperature
glass
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JP21746399A
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JP2001042153A (en
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広明 岡野
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、光通信部品分野に広範囲な応用をもつ石英ガラス系光導波路の製造方法に係り、特に偏波依存性を低減できる石英ガラス系光導波路の製造方法に関するものである。
【0002】
【従来の技術】
図3に従来の石英ガラス系光導波路の構造を示す。
【0003】
図3に示すように、従来の石英ガラス系光導波路は、石英ガラス基板10上に形成された複数のコア導波路11が、B及びPの添加されたSiOガラスよりなるクラッド層12で覆い埋め込まれた構造が一般的である。
【0004】
図4(a)から図4(e)を用いてその製造方法について述べる。
【0005】
まず、図4(a)に示すように、石英ガラス基板20を用意し、図4(b)に示すように、その石英ガラス基板上に、電子ビーム蒸着法により組成SiO−TiOのコア膜21を形成する。次に、図4(c)に示すように、コア膜をフォトリソグラフィー及び反応性イオンエッチングを用いて複数のコア導波路22を形成させ、さらに図4(d)に示すように、コア導波路の周りに、火炎堆積法によりSiO−B−P系多孔質ガラス層を堆積させる。次に、電気炉内に移してHeガス雰囲気中で熱処理を施し、図4(e)に示すように、透明ガラス化してSiO−B−P系ガラスで構成されたクラッド層24を形成する。この時の熱処理の温度は1340℃である。ここで、B及びPのドーパント剤は透明ガラス温度を下げる目的で添加するものであり、また、クラッド層24の屈折率は、光学特性上、石英ガラス基板20すなわちシリカと同等になるように、B及びPの添加量を調整する。
【0006】
【発明が解決しようとする課題】
このように、石英ガラス基板20上に形成した複数のコア導波路22をクラッド層24で埋め込む場合、コア導波路22上に火炎堆積法によりB、Pを添加した多孔質ガラス層23を形成し、これに熱処理を施し、透明ガラス化する方法が一般的である。
【0007】
この場合、石英ガラス系光導波路の重要な特性である偏波依存性を小さくするために、クラッド層24に含まれるB、Pの添加量を極力小さくすることが望ましい。
【0008】
しかしながら、火炎堆積法により複数のコア導波路22間を隙間なくクラッド層24で覆い埋め込むためには、ある一定以上のB、Pの添加量とある一定以上の多孔質ガラス層の熱処理温度が必要であり、具体的には1300℃以上の温度がどうしても必要であり、この温度は基板である石英ガラス基板20の熱変形が生じる温度を越えるものである。
【0009】
これらを鑑みて、波長多重用の光合分波用ガラス導波路を作製した場合、偏光による中心波長のずれ量(以下、「偏波依存性」と定義する。)を0.05nm以下とすることは不可能であった。
【0010】
また、図4に示した製造方法により、2入力×16出力の導波路型光スプリッタを試作し、この導波路型光スプリッタの16個の出力ポートに、所定ピッチで形成されたV溝に光ファイバの端部を固定した光ファイバアレイを接続したところ、その接続損失が極めて大きなものが数多く存在し、歩留りが極めて悪いものであった。
【0011】
その原因について検討した結果、製造工程中の高温処理によってコア導波路間ピッチが設計値に対して大幅に収縮していたことが、コア導波路と光ファイバアレイの光ファイバとの軸ずれを起こす要因であることが判明した。
【0012】
そこで、本発明の目的は、上記従来技術の欠点を解消し、偏波依存性あるいは、偏光依存性損失を大幅に減少させると共に光導波路と光ファイバの高精度な接続を可能とすることにより製造歩留りの向上及び低価格下を達成できる石英ガラス系光導波路の製造方法を提供することにある。
【0013】
【課題を解決するための手段】
上記課題を解決するために請求項1の発明は、石英ガラス基板上に形成した複数のコア導波路をそのコア導波路よりも低屈折率のクラッド層で埋め込む石英ガラス系光導波路の製造方法において、屈折率を高くする金属元素を添加したSiO2成膜した後、1000℃から1200℃の範囲内の温度で熱処理してコアガラス膜を形成し、そのコアガラス膜から、ホトリソグラフィー及び反応性イオンエッチングを用いて複数のコア導波路を形成し、そのコア導波路の周りに、ドーパントを含まないSiO2ガラスを成膜した後に1000℃から1200℃の範囲内の温度で熱処理してクラッド層を形成する石英ガラス系光導波路のである。
【0014】
請求項2の発明は、上記コアガラス膜を形成するSiOに添加される金属元素は、TiあるいはGeである石英ガラス系光導波路の製造方法である。
【0015】
請求項3の発明は、上記コアガラス膜とクラッド層との成膜温度差の絶対値を50℃以下とする石英ガラス系光導波路の製造方法である。
【0016】
請求項4の発明は、上記コアガラス膜を、500℃以下の温度で電子ビーム蒸着法、スパッタリング法あるいはプラズマCVD法を用いて成膜した後、屈折率が所望の値になるように1000℃から1200℃の範囲内で熱処理して形成する石英ガラス系光導波路の製造方法である。
【0017】
請求項5の発明は、上記クラッド層を、500℃以下の温度でスパッタリング法あるいはプラズマCVD法を用いて成膜した後、屈折率が所望の値になるように1000℃から1200℃の範囲内で熱処理して形成する石英ガラス系光導波路の製造方法である。
【0018】
請求項6の発明は、上記石英ガラス基板は、純粋SiOガラスからなる合成石英基板である石英ガラス系光導波路の製造方法である。
【0019】
上記構成によれば、クラッド層が純粋SiOであるために、石英ガラス基板との線膨張差が等しく、コア導波路に対する内部応力の発生が実質的に無くなるために、偏光による偏波依存性あるいは、偏光依存性損失が極めて小さい石英ガラス系光導波路を製造できる。また、コアガラス膜及びクラッド層の熱処理温度を最大1200℃以下としたために、石英ガラス基板の収縮によるコア導波路のピッチ収縮も解消され、導波路と光ファイバの高精度な接続を可能とすることができる。
【0020】
【発明の実施の形態】
次に、本発明の好適一実施の形態を添付図面に基づいて詳述する。
【0021】
図2に本発明により製造された石英ガラス系光導波路の横断面図を示す。
【0022】
図2に示すように、この石英ガラス系光導波路は、外径4インチ、厚さ1mmの石英ガラス基板1上に、高さh1 と幅w1 が6×6μmの断面正方形状のコア導波路2,2が、2本並列して形成されていると共にこれら2本のコア導波路2,2の側面間距離dが9μmに形成されている。すなわち、アスペクト比(d/h 1 )が1.5とされている。
【0023】
さらに、それらコア導波路2,2の周りにクラッド層3が石英ガラス基板1上から30μmの厚さで形成されている。
【0024】
石英ガラス基板1は、純粋SiOからなる合成石英基板からなり、またコア導波路2は、その石英ガラス基板1よりも屈折率の高い金属元素を1種類添加したSiOからなる。この金属元素は、例えばTiやGeが用いられる。また、クラッド層3はドーパントを含まないSiOガラスすなわち上述した石英ガラス基板と同様に純粋SiOからなる。
【0025】
次に、本発明にかかる石英ガラス系光導波路の製造方法を作用と共に図1を用いて説明する。
【0026】
石英ガラス系光導波路を製造するに際しては、図1(a)に示すように、例えば外径4インチ、厚さ1mmの石英ガラス基板30を用意し、図1(b)に示すように、その石英ガラス基板30の上に、TiO−SiOのコアガラス膜31を電子ビーム蒸着法で形成する。この時、成膜温度は350℃である。その後、コアガラス膜31の屈折率を所望の値にするために、1100℃酸素雰囲気中で熱処理を施す。これにより熱イオン交換が行われ、屈折率が調整されたコアガラス膜31が形成される。
【0027】
さらに、図1(c)に示すように、このコアガラス膜をホトリソグラフィー及び反応性イオンエッチングを用いて加工し、複数のコア導波路32,32が形成される。
【0028】
そして、図1(d)に示すように、コア導波路32,32が形成された石英ガラス基板上に、プラズマCVD法により、純粋SiOを成膜する。この時、成膜温度は約400℃である。その後、純粋SiOガラスを所望の屈折率とするために、1100℃酸素雰囲気中で熱処理を施す。これにより熱イオン交換が行われて屈折率が調整されたクラッド層が形成され、石英ガラス系光導波路が製造される。
【0029】
以上説明したように、コアガラス膜31とクラッド層33の熱処理温度を1000℃から1200℃の範囲内とし、さらにこれらコアガラス膜31とクラッド層33との熱処理温度差の絶対値を50℃以下とすることにより、熱処理の際に石英ガラス基板30も加熱されるが、石英ガラス基板30の融点がおよそ1300℃なので溶解することはなく、石英ガラス基板30の収縮によるコア導波路32のピッチ収縮も解消される。これにより、導波路と光ファイバの高精度な接続を可能とすることができ、製造歩留りの向上及び低価格下を達成できる。
【0030】
さらに、この石英ガラス系光導波路は、クラッド層33が純粋SiOであるために、石英ガラス基板30との線膨張差が等しく、コア導波路32に対する内部応力の発生が実質的に無くなり、本発明により、偏光による偏波依存性あるいは、偏光依存性損失が極めて小さい石英ガラス系光導波路を製造できる。
【0031】
次に、本実施の形態で説明した石英ガラス系光導波路から、波長多重用の光合分波用ガラス導波路を製造し、その光学的特性を調べた。
【0032】
その結果、偏光による偏波依存性は0.001nm以下となり、従来の製造方法で作製したものと比べ約1/50となり、偏光による偏波依存性完全に解消できたことを確認した。
【0033】
次に、2入力×16出力の導波路型光スプリッタを試作し、この導波路型光スプリッタの16個の出力側ポートに、所定ピッチで形成されたV溝に光ファイバの端部を固定した光ファイバアレイを接続した。
【0034】
その結果、接続損失は全てのポートに対し0.2dB以下であり、極めて良好な結果を得た。
【0035】
【発明の効果】
以上要するに本発明によれば、以下に示すような優れた効果を発揮する。
【0036】
(1)偏光による偏波依存性あるいは、偏光依存性損失が極めて小さい石英ガラス系光導波路を製造できる。
【0037】
(2)石英ガラス基板の収縮によるコア導波路のピッチ収縮が解消され、導波路と光ファイバの高精度な接続を可能とすることができる。
【0038】
(3)製造歩留りの向上及び低価格下を達成できる。
【図面の簡単な説明】
【図1】本発明を説明するための製造工程図である。
【図2】本発明により製造された石英ガラス系光導波路の横断面図である。
【図3】従来技術により製造された石英ガラス系光導波路の横断面図である。
【図4】従来技術を説明するための製造工程図である。
【符号の説明】
30 石英ガラス基板
31 コアガラス膜
32 コア導波路
33 クラッド層
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a silica glass optical waveguide having a wide range of applications in the field of optical communication components, and more particularly to a method for manufacturing a silica glass optical waveguide capable of reducing polarization dependence.
[0002]
[Prior art]
FIG. 3 shows the structure of a conventional silica glass optical waveguide.
[0003]
As shown in FIG. 3, in the conventional silica glass optical waveguide, a plurality of core waveguides 11 formed on a silica glass substrate 10 are covered with a cladding layer 12 made of SiO 2 glass to which B and P are added. Embedded structures are common.
[0004]
The manufacturing method will be described with reference to FIGS.
[0005]
First, as shown in FIG. 4A, a quartz glass substrate 20 is prepared, and as shown in FIG. 4B, a core of a composition SiO 2 —TiO 2 is formed on the quartz glass substrate by an electron beam evaporation method. A film 21 is formed. Next, as shown in FIG. 4C, a plurality of core waveguides 22 are formed on the core film by photolithography and reactive ion etching, and further, as shown in FIG. around, depositing SiO 2 -B 2 O 3 -P 2 O 5 based porous glass layer by flame hydrolysis deposition. Next, it was moved into an electric furnace and subjected to a heat treatment in a He gas atmosphere, and as shown in FIG. 4 (e), it was made transparent and made of SiO 2 —B 2 O 3 —P 2 O 5 -based glass. The clad layer 24 is formed. The temperature of the heat treatment at this time is 1340 ° C. Here, the dopants of B 2 O 3 and P 2 O 5 are added for the purpose of lowering the temperature of the transparent glass, and the refractive index of the cladding layer 24 is different from that of the silica glass substrate 20, ie, silica, in terms of optical characteristics. The amounts of B and P are adjusted so as to be equivalent.
[0006]
[Problems to be solved by the invention]
As described above, when the plurality of core waveguides 22 formed on the quartz glass substrate 20 are embedded with the cladding layer 24, the porous glass layer 23 to which B and P are added is formed on the core waveguide 22 by the flame deposition method. In general, a method of subjecting this to a heat treatment to form a transparent glass is provided.
[0007]
In this case, in order to reduce the polarization dependence, which is an important characteristic of the quartz glass optical waveguide, it is desirable to minimize the amounts of B and P contained in the cladding layer 24.
[0008]
However, in order to cover and embed between the plurality of core waveguides 22 with no gap by the flame deposition method, a certain amount or more of the added amount of B and P and a certain amount or more of the heat treatment temperature of the porous glass layer are required. Specifically, a temperature of 1300 ° C. or more is absolutely necessary, and this temperature exceeds a temperature at which thermal deformation of the quartz glass substrate 20 as a substrate occurs.
[0009]
In view of these, in the case where a glass waveguide for wavelength division multiplexing and optical multiplexing / demultiplexing is manufactured, the shift amount of the center wavelength due to polarization (hereinafter, defined as "polarization dependence") is set to 0.05 nm or less. Was impossible.
[0010]
Further, a waveguide-type optical splitter of 2 inputs × 16 outputs was prototyped by the manufacturing method shown in FIG. 4, and light was supplied to V-grooves formed at a predetermined pitch in 16 output ports of the waveguide-type optical splitter. When an optical fiber array in which the ends of the fibers were fixed was connected, there were many optical fiber arrays with extremely large connection losses, and the yield was extremely poor.
[0011]
As a result of studying the cause, the pitch between the core waveguides significantly shrinked from the design value due to the high temperature treatment during the manufacturing process, causing the axis deviation between the core waveguide and the optical fiber of the optical fiber array. Turned out to be a factor.
[0012]
Therefore, an object of the present invention is to solve the above-mentioned drawbacks of the prior art, to greatly reduce the polarization-dependent or polarization-dependent loss, and to enable high-precision connection between an optical waveguide and an optical fiber. An object of the present invention is to provide a method for manufacturing a silica glass optical waveguide that can achieve an improvement in yield and lower cost.
[0013]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the invention according to claim 1 relates to a method for manufacturing a silica glass optical waveguide in which a plurality of core waveguides formed on a silica glass substrate are embedded with a cladding layer having a lower refractive index than the core waveguide. After forming a SiO 2 film to which a metal element for increasing the refractive index is added, heat treatment is performed at a temperature in the range of 1000 ° C. to 1200 ° C. to form a core glass film. From the core glass film, photolithography and reaction are performed. forming a core waveguide of multiple using sex ion etching, around the core waveguide, and heat-treated at a temperature in the range of from 1000 ° C. to 1200 ° C. after forming the SiO 2 glass containing no dopant This is a quartz glass optical waveguide forming a cladding layer.
[0014]
The invention according to claim 2 is a method for manufacturing a quartz glass optical waveguide in which the metal element added to SiO 2 forming the core glass film is Ti or Ge.
[0015]
The invention according to claim 3 is a method for manufacturing a quartz glass optical waveguide in which the absolute value of the film forming temperature difference between the core glass film and the cladding layer is 50 ° C. or less.
[0016]
The invention according to claim 4 is that, after the core glass film is formed at a temperature of 500 ° C. or less by using an electron beam evaporation method, a sputtering method, or a plasma CVD method, 1000 ° C. is used so that the refractive index becomes a desired value. This is a method for manufacturing a quartz glass-based optical waveguide formed by performing a heat treatment at a temperature in the range of 1 to 1200 ° C.
[0017]
The invention according to claim 5 is that the cladding layer is formed at a temperature of 500 ° C. or less by a sputtering method or a plasma CVD method, and then has a refractive index in a range of 1000 ° C. to 1200 ° C. so as to have a desired value. This is a method for manufacturing a silica glass optical waveguide formed by heat treatment in step (a).
[0018]
The invention according to claim 6 is a method for manufacturing a quartz glass optical waveguide, wherein the quartz glass substrate is a synthetic quartz substrate made of pure SiO 2 glass.
[0019]
According to the above configuration, since the cladding layer is made of pure SiO 2 , the linear expansion difference from the quartz glass substrate is equal, and the generation of internal stress on the core waveguide is substantially eliminated. Alternatively, a silica glass optical waveguide having extremely small polarization dependent loss can be manufactured. Further, since the heat treatment temperature of the core glass film and the cladding layer is set to a maximum of 1200 ° C. or less, the pitch shrinkage of the core waveguide due to the shrinkage of the quartz glass substrate is eliminated, and the waveguide and the optical fiber can be connected with high accuracy. be able to.
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
[0021]
FIG. 2 shows a cross-sectional view of a silica glass optical waveguide manufactured according to the present invention.
[0022]
As shown in FIG. 2, this quartz glass-based optical waveguide is formed on a quartz glass substrate 1 having an outer diameter of 4 inches and a thickness of 1 mm, a core conductor having a height h 1 and a width w 1 of 6 × 6 μm and a square cross section. The two waveguides 2, 2 are formed in parallel, and the distance d between the side surfaces of these two core waveguides 2, 2 is formed to be 9 μm. That is, the aspect ratio ( d / h 1 ) is set to 1.5.
[0023]
Further, a cladding layer 3 is formed around the core waveguides 2 and 2 with a thickness of 30 μm from above the quartz glass substrate 1.
[0024]
The quartz glass substrate 1 is made of a synthetic quartz substrate made of pure SiO 2 , and the core waveguide 2 is made of SiO 2 to which one kind of metal element having a higher refractive index than that of the quartz glass substrate 1 is added. As this metal element, for example, Ti or Ge is used. The cladding layer 3 is made of SiO 2 glass containing no dopant, that is, pure SiO 2 like the quartz glass substrate described above.
[0025]
Next, a method for manufacturing a silica glass optical waveguide according to the present invention will be described with reference to FIG.
[0026]
When manufacturing a silica glass optical waveguide, as shown in FIG. 1A, for example, a quartz glass substrate 30 having an outer diameter of 4 inches and a thickness of 1 mm is prepared, and as shown in FIG. A TiO 2 —SiO 2 core glass film 31 is formed on a quartz glass substrate 30 by an electron beam evaporation method. At this time, the film formation temperature is 350 ° C. Thereafter, heat treatment is performed in an oxygen atmosphere at 1100 ° C. in order to set the refractive index of the core glass film 31 to a desired value. Thereby, thermal ion exchange is performed, and the core glass film 31 whose refractive index is adjusted is formed.
[0027]
Further, as shown in FIG. 1C, the core glass film is processed by using photolithography and reactive ion etching to form a plurality of core waveguides 32.
[0028]
Then, as shown in FIG. 1D, pure SiO 2 is formed by a plasma CVD method on the quartz glass substrate on which the core waveguides 32, 32 are formed. At this time, the film formation temperature is about 400 ° C. Thereafter, heat treatment is performed in an oxygen atmosphere at 1100 ° C. in order to make the pure SiO 2 glass have a desired refractive index. Thus, a cladding layer having a controlled refractive index is formed by performing thermal ion exchange, and a silica glass optical waveguide is manufactured.
[0029]
As described above, the heat treatment temperature of the core glass film 31 and the clad layer 33 is set in the range of 1000 ° C. to 1200 ° C., and the absolute value of the heat treatment temperature difference between the core glass film 31 and the clad layer 33 is set to 50 ° C. or less. The quartz glass substrate 30 is also heated during the heat treatment, but does not melt because the melting point of the quartz glass substrate 30 is about 1300 ° C., and the pitch shrinkage of the core waveguide 32 due to the shrinkage of the quartz glass substrate 30 is achieved. Is also eliminated. As a result, it is possible to connect the waveguide and the optical fiber with high precision, and it is possible to achieve an improvement in manufacturing yield and a reduction in cost.
[0030]
Further, since the clad layer 33 is made of pure SiO 2 , the silica glass optical waveguide has the same linear expansion difference as the quartz glass substrate 30, and substantially no internal stress is generated on the core waveguide 32. According to the invention, it is possible to manufacture a silica glass optical waveguide having extremely small polarization-dependent or polarization-dependent loss due to polarization.
[0031]
Next, a glass waveguide for wavelength multiplexing / demultiplexing was manufactured from the silica glass-based optical waveguide described in the present embodiment, and its optical characteristics were examined.
[0032]
As a result, the polarization dependence due to polarization was 0.001 nm or less, which was about 1/50 of that produced by the conventional manufacturing method, and it was confirmed that the polarization dependence due to polarization could be completely eliminated.
[0033]
Next, a prototype optical waveguide splitter having 2 inputs × 16 outputs was fabricated, and the ends of the optical fibers were fixed to V-grooves formed at a predetermined pitch at 16 output ports of the waveguide optical splitter. An optical fiber array was connected.
[0034]
As a result, the connection loss was 0.2 dB or less for all ports, and extremely good results were obtained.
[0035]
【The invention's effect】
In short, according to the present invention, the following excellent effects are exhibited.
[0036]
(1) A silica glass-based optical waveguide having extremely small polarization-dependent or polarization-dependent loss due to polarized light can be manufactured.
[0037]
(2) Pitch shrinkage of the core waveguide due to shrinkage of the quartz glass substrate is eliminated, and highly accurate connection between the waveguide and the optical fiber can be made possible.
[0038]
(3) It is possible to improve the production yield and reduce the cost.
[Brief description of the drawings]
FIG. 1 is a manufacturing process diagram for explaining the present invention.
FIG. 2 is a cross-sectional view of a silica glass optical waveguide manufactured according to the present invention.
FIG. 3 is a cross-sectional view of a silica glass optical waveguide manufactured according to the related art.
FIG. 4 is a manufacturing process diagram for explaining a conventional technique.
[Explanation of symbols]
Reference Signs List 30 quartz glass substrate 31 core glass film 32 core waveguide 33 clad layer

Claims (6)

石英ガラス基板上に形成した複数のコア導波路を該コア導波路よりも低屈折率のクラッド層で埋め込む石英ガラス系光導波路の製造方法において、屈折率を高くする金属元素を添加したSiO2成膜した後、1000℃から1200℃の範囲内の温度で熱処理してコアガラス膜を形成し、該コアガラス膜から、ホトリソグラフィー及び反応性イオンエッチングを用いて複数のコア導波路を形成し、該コア導波路の周りに、ドーパントを含まないSiO2ガラスを成膜した後に1000℃から1200℃の範囲内の温度で熱処理してクラッド層を形成することを特徴とする石英ガラス系光導波路の製造方法。In a method for manufacturing a quartz glass optical waveguide in which a plurality of core waveguides formed on a quartz glass substrate are embedded with a cladding layer having a lower refractive index than the core waveguide, SiO 2 added with a metal element for increasing the refractive index is used. after forming, to form a core glass film was heat-treated at a temperature in the range of 1200 ° C. from 1000 ° C., from the core glass film, forming a core waveguide of several by photolithography and reactive ion etching And forming a clad layer by forming a SiO 2 glass containing no dopant around the core waveguide and then performing a heat treatment at a temperature in a range of 1000 ° C. to 1200 ° C. Waveguide manufacturing method. 上記コアガラス膜を形成するSiOに添加される金属元素は、TiあるいはGeである請求項1記載の石英ガラス系光導波路の製造方法。 2. The method according to claim 1, wherein the metal element added to the SiO 2 forming the core glass film is Ti or Ge. 上記コアガラス膜とクラッド層との成膜温度差の絶対値を50℃以下とする請求項1記載の石英ガラス系光導波路の製造方法。2. The method according to claim 1, wherein the absolute value of the film forming temperature difference between the core glass film and the cladding layer is 50 ° C. or less. 上記コアガラス膜を、500℃以下の温度で電子ビーム蒸着法、スパッタリング法あるいはプラズマCVD法を用いて成膜した後、屈折率が所望の値になるように1000℃から1200℃の範囲内で熱処理して形成する請求項1記載の石英ガラス系光導波路の製造方法。After the core glass film is formed at a temperature of 500 ° C. or less by using an electron beam evaporation method, a sputtering method, or a plasma CVD method, the refractive index is in a range of 1000 ° C. to 1200 ° C. so that the refractive index becomes a desired value. 2. The method for manufacturing a quartz glass optical waveguide according to claim 1, wherein the optical waveguide is formed by heat treatment. 上記クラッド層を、500℃以下の温度でスパッタリング法あるいはプラズマCVD法を用いて成膜した後、屈折率が所望の値になるように1000℃から1200℃の範囲内で熱処理して形成する請求項1記載の石英ガラス系光導波路の製造方法。The cladding layer is formed by sputtering or plasma CVD at a temperature of 500 ° C. or less, and then heat-treated at a temperature in the range of 1000 ° C. to 1200 ° C. so that the refractive index becomes a desired value. Item 4. The method for producing a silica glass optical waveguide according to Item 1. 上記石英ガラス基板は、純粋SiOガラスからなる合成石英基板である請求項1記載の石英ガラス系光導波路の製造方法。 2. The method according to claim 1, wherein the quartz glass substrate is a synthetic quartz substrate made of pure SiO2 glass.
JP21746399A 1999-07-30 1999-07-30 Method for manufacturing silica glass optical waveguide Expired - Fee Related JP3575342B2 (en)

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