JP3577807B2 - Driver circuit for self-extinguishing semiconductor device - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a driving circuit for a voltage-controlled self-extinguishing semiconductor device such as an insulated gate bipolar transistor (hereinafter, referred to as an IGBT) and a field effect transistor.
[0002]
[Prior art]
FIG. 9 shows a general circuit configuration diagram of a voltage source inverter using an IGBT. A DC power supply 20 is connected in parallel with a smoothing capacitor 21 and includes a DC power supply 20 composed of IGBTs 24 to 27 and diodes 28 to 31. Power is supplied to the inverter bridge, and the output converted into AC by the inverter bridge is configured to allow a load current _IL to flow through a load including a resistor 22 and an inductance 23.
[0003]
In Figure 10 are views for explaining the operation of the voltage source inverter shown in FIG. 9, FIG. 10 (b) the value of the stray inductance 32 by circuit wiring as shown is L, the load current I _L through the IGBT25 arrow FIG. 10B shows operation waveforms of the IGBT 25 and the diode 28 at this time.
That is, in FIG. 10 (b), when the IGBT25 is turned off, the load current _{I L} commutates to the diode 28, decreasing the current _{I C} flowing through the IGBT25. Surge voltage [Delta] V _P is applied to the generated IGBT25 rate of decrease of the current and [-di / dt] by the stray inductance 32 (see FIG. 10 (b)). The load current _{I L} and the load current _{I L} IGBT25 during flowing is turned to the diode 28 commutates the IGBT25, the current _{I D} flowing through the diode 28 decreases. After the decrease of the current _ID , the diode 28 reversely recovers, and a surge voltage ΔV _D is generated by the current change rate [di / dt] and the stray inductance 32 at the time of the reverse recovery and applied to the diode 28 (FIG. )reference).
[0004]
Since the surge voltages ΔV _P and ΔV _D are L × di / dt, it is necessary to reduce the stray inductance 32 or reduce the [di / dt] in order to reduce the ΔV _P and ΔV _D. is there. However, since there is a limit in circuit wiring to reduce the stray inductance 32, it is general to switch the IGBT gently to reduce [di / dt] and [−di / dt] at the time of IGBT switching. It is a target.
[0005]
[Problems to be solved by the invention]
FIG. 11 shows a conventional method for gently switching the IGBT in order to reduce the aforementioned [di / dt] and [-di / dt].
In FIG. 11A, a gate drive voltage V _GE based on an on / off signal commanded from the outside is obtained by connecting a series circuit of the transistor 8 and the resistor 12 or the transistor 10 and the resistor 14 Is input to the gate of the IGBT 25 through the series circuit of FIG.
[0006]
Since the portion between the gate and the emitter of the IGBT 25 is regarded as a capacitor, the charge and discharge time of the capacitor can be adjusted by the resistors 12 and 14. By increasing the values of the resistors 12 and 14, the charge / discharge time of the gate portion of the IGBT 25 can be delayed, and the rise and fall of the gate voltage V _GE of the IGBT 25 can be made gentle. As a result, IGBT25 performs gradual switching, it is possible to suppress the surge voltage [Delta] V _P and [Delta] V _D by reduction of the [di / dt] and [-di / dt].
[0007]
In FIG. 11B, a solid line waveform shows an operation waveform when the values of the resistors 12 and 14 are reduced, and a dotted line waveform shows an operation waveform when the values of the resistors 12 and 14 are increased.
However, the above method increases the time delay from the input of the ON / OFF signal to the actual operation of the IGBT 25, making it difficult to perform switching in a short time and preventing the upper and lower arms of the bridge connection of the IGBT from being short-circuited. There is a problem that the dead time for the operation becomes long.
[0008]
An object of the present invention is to provide a drive circuit for a self-extinguishing semiconductor device which solves the above-mentioned problems.
[0011]
According to a first aspect of the present invention, in a drive circuit for a voltage-controlled self-extinguishing type semiconductor element, the drive circuit supplies a drive power supply in which an ON power supply and an OFF power supply are connected in series, and an external supply to the drive circuit. A voltage change rate detection circuit for detecting a voltage change rate between a collector and an emitter terminal or between a drain and a source terminal of the self-arc-extinguishing type semiconductor element which operates based on an on / off signal of the self-extinguishing type semiconductor element. A first one-shot circuit that outputs a pulse shorter than the on-period of the on / off signal when the voltage change rate changes to a negative polarity, and a first one-shot circuit that outputs a pulse when the voltage change rate changes to a positive polarity. A second one-shot circuit that outputs a pulse having a width; first to fourth switching circuits each including a series circuit of a resistor and a transistor; a first switching circuit and a second switching circuit A first switching series circuit in which circuits are connected in series; a second switching series circuit in which a third switching circuit and a fourth switching circuit are connected in series; And a switching circuit for selecting and turning on a transistor of the switching circuit of No. 4 and connecting the driving power supply and the first and second switching series circuits in parallel, respectively, to turn on and off the driving power supply. A connection point between the power supply and an emitter terminal or a source terminal of the self-extinguishing semiconductor device is connected, a connection point between the first switching circuit and the second switching circuit, a third switching circuit and a fourth switching circuit. And the gate terminal of the self-extinguishing semiconductor device are connected in parallel.
[0013]
According to a second aspect of the present invention, there is provided a drive circuit for a voltage-controlled self-extinguishing type semiconductor device.
The drive circuit includes a drive power supply in which an ON power supply and an OFF power supply are connected in series, and a self-power-off circuit that operates based on an ON / OFF signal of the self-turn-off type semiconductor element externally supplied to the drive circuit. A potential difference detection circuit for detecting a potential difference between a collector terminal or a drain terminal of the arc-shaped semiconductor element and a positive terminal of the power supply for on, and when a potential of the collector terminal or the drain terminal becomes lower than a potential of the positive terminal of the power supply for on. A first one-shot circuit that outputs a pulse shorter than the ON period of the ON / OFF signal, and a predetermined width when the potential of the collector terminal or the drain terminal becomes higher than the potential of the positive terminal of the ON power supply. A second one-shot circuit for outputting a pulse having the first switching circuit, a first to a fourth switching circuit including a series circuit of a resistor and a transistor, and a first switching circuit. A first switching series circuit formed by connecting a path and a second switching circuit in series, and a second switching series circuit formed by connecting a third switching circuit and a fourth switching circuit in series, A switching circuit for selecting and conducting the transistors of the first to fourth switching circuits. The driving power supply and the first and second switching series circuits are connected in parallel, respectively. A connection point between the power supply for turning on and the power supply for turning off, an emitter terminal or a source terminal of the self-extinguishing type semiconductor element, and a connection point between the first switching circuit and the second switching circuit; A connection point between the switching circuit and the fourth switching circuit and a gate terminal of the self-extinguishing semiconductor device are connected in parallel.
[0015]
Further, the third invention is a method according to the first or second invention, wherein
The resistance value of the resistance of the first switching circuit is set to a value larger than the resistance value of the resistance of the third switching circuit, and the resistance value of the resistance of the second switching circuit is set to the value of the fourth switching circuit. The resistance is set to a value larger than the resistance value.
According to the first and second aspects of the present invention, when the IGBT serving as the voltage-controlled self-extinguishing semiconductor device is turned on, the resistance of the first switching circuit is set to a large resistance value to reduce the aforementioned [di / dt]. When the IGBT is completely turned on, the resistance is switched to a small value by the resistance of the third switching circuit. When the IGBT is turned off, the resistance is set to a small value by the resistance of the fourth switching circuit. The time delay from when the OFF signal is commanded until the IGBT actually starts the OFF operation is prevented from increasing, and when the IGBT starts the OFF operation, the resistance is switched to a large resistance value of the resistance of the second switching circuit and the above-mentioned [− dt / dt].
[0016]
According to the first to third aspects of the present invention, when the IGBT is turned on, the resistance of the third switching circuit is first set to a small resistance value, and the IGBT is actually turned on after the ON signal of the ON / OFF signal is commanded. When the time delay until the operation starts is reduced, and when the turn-on operation is started, the resistance value of the first switching circuit is set to a large resistance value to reduce the aforementioned [di / dt], and the IGBT approaches a completely ON state. And the resistance of the third switching circuit is switched to a small resistance value to suppress an increase in turn-on loss. When the IGBT is turned off, the resistance value of the fourth switching circuit is set to a small resistance value to turn off the on / off signal. The time delay from when the signal is commanded until the IGBT actually starts the turn-off operation is reduced,
When the IGBT starts the turn-off operation, the IGBT is switched to a large resistance value by the resistance of the second switching circuit, and acts to reduce the above-mentioned [-dt / dt].
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a configuration diagram of a drive circuit of a self-extinguishing type semiconductor device showing a configuration of a basic circuit section of the present invention. Only a drive circuit corresponding to the IGBT 25 of the voltage source inverter shown in FIG. 9 is shown. Components having the same functions as those of the circuit shown in FIG. 11 are denoted by the same reference numerals, and description thereof will be omitted.
[0018]
That is, in FIG. 1, the one-shot circuit 41, the one-shot circuit 42, the resistor 12 and the transistor 8 as the first switching circuit 100, the transistor 10 and the resistor 14 as the second switching circuit 200, and the third The resistor 11 and the transistor 7 as the switching circuit 300, the transistor 9 and the resistor 13 as the fourth switching circuit 400, the ON power supply 15 and the OFF power supply 16 as the driving power supply, and the one-shot circuit 41 The transistor 8 is turned on during the output, the transistor 7 is turned on during the remaining period of the ON signal input of the ON / OFF signal, and the transistor 10 is turned on while the one-shot circuit 42 is outputting a pulse. The switching circuit 43 for turning on the transistor 9 during the remaining period of the signal OFF signal input It is constructed from.
[0019]
The operation of the drive circuit of FIG. 1 will be described below with reference to the operation waveform diagram of FIG. Time T ₁ on-off signal to start the one-shot circuit 41 operates when turned from OFF to ON, the switching circuit 43 turns on the first transistor 8 of the switching circuit 100, the resistance of the first switching circuit 100 The capacitor between the gate and the emitter of the IGBT 25 is charged from the power supply 15 for ON through the power supply 12. As the capacitor is charged, the gate voltage V _GE rises, and the IGBT 25 starts to turn on.
[0020]
At time T _2, the operation of the one-shot circuit 41 is completed, the switching circuit 43 turns off the first transistor 8 of the switching circuit 100 to turn on the transistor 7 of the third switching circuit 300 at the same time. The resistance 11 of the third switching circuit 300 is set to a smaller value than the resistance 12 of the first switching circuit 100. Therefore, the charging current flowing to the gate of the IGBT 25 increases, and the gate voltage V _{GE of the} IGBT 25 increases. Rapidly rises to almost the voltage of the ON power supply 15, and the IGBT 25 is completely turned on.
[0021]
One-shot circuit 42 starts operating when the on-off signal is changed from ON to OFF at time T _3, the switching circuit 43 turns off the transistor 7 of the third switching circuit 300, at the same time of the second switching circuit 200 The transistor 10 is turned on. When the transistor 10 of the second switching circuit 200 is turned on, the charge of the capacitor between the gate and the emitter of the IGBT 25 is discharged through the resistor 14 of the second switching circuit 200, the gate voltage V _GE of the IGBT 25 decreases, and the IGBT 25 turns off. Start.
[0022]
When the operation of the one-shot circuit 42 ends at time T _4, the switching circuit 43 turns off the transistor 10 of the second switching circuit 200 to turn on the transistor 9 of the fourth switching circuit 400 at the same time. When the transistor 9 of the fourth switching circuit 400 is turned on, the charge of the capacitor between the gate and the emitter of the IGBT is discharged via the resistor 13 of the fourth switching circuit 400. The resistance 13 of the fourth switching circuit 400 is set to a value larger than that of the resistance 14 of the second switching circuit 200. Therefore, the gate voltage V _{GE of the} IGBT 25 is gradually reduced to almost the voltage of the power supply 16 for turning off. And the IGBT 25 is completely turned off.
[0023]
As described above, in the configuration of the basic circuit section of the present invention, when the IGBT 25 is turned on, the gradual switching is initially performed by the resistor 12 having a large value to suppress the surge voltage ΔV _D by reducing the aforementioned [di / dt]. After the collector current rises, switching is rapidly performed with a small value resistor 11 to prevent an increase in turn-on loss. Also, when the IGBT 25 is turned off, the discharge is initially performed by the resistor 14 having a small value to prevent an increase in operation delay with respect to the on / off signal of the IGBT 25, and when the IGBT 25 starts to be turned off, switching is performed by the resistor 13 having a large value. , [-Di / dt] is reduced to suppress the surge voltage ΔV _P.
[0024]
FIG. 3 is a configuration diagram of a drive circuit for a self-extinguishing semiconductor device according to a first embodiment of the present invention, in which components having the same functions as those of the circuit shown in FIG. Description is omitted.
That is, in FIG. 3, a voltage change rate detection circuit 51 including a capacitor 51a for detecting a voltage change rate between the collector and the emitter terminal of the IGBT 25 and a resistor 51b, and the voltage change rate of the output of the voltage change rate detection circuit 51 are A one-shot circuit 52 that outputs a pulse of a predetermined width when the voltage changes to a negative polarity, and outputs a pulse of a predetermined width when the voltage change rate of the output of the voltage change rate detection circuit 51 changes to a positive polarity. When the one-shot circuit 53 and the one-shot circuit 52 are outputting a pulse, the transistor 8 is turned on, and during the remaining period during the input of the on / off signal, the transistor 7 is turned on. A switching circuit that turns on the transistor 10 during output and turns on the transistor 9 during the remaining period of the off signal input of the on / off signal And a 4.
[0025]
The operation of the drive circuit of FIG. 3 will be described below with reference to the operation waveform diagram of FIG. When the on-off signal at time _{T 1} is changed from OFF to ON, the transistor 7 of the third switching circuit 300 is turned on by the switching circuit 54, the third on-power source 15 through the resistor 11 of the switching circuit 300 IGBT25 Charge the capacitor between the gate and the emitter. The gate voltage _{V GE} along with the capacitor is charged to rise, from the time _{T 2} IGBT25 starts turn-on operation.
[0026]
If from time T ₂ IGBT25 starts turn-on operation, the voltage change rate of the output operates the one-shot circuit 52 changes to a negative polarity of the voltage change rate detecting circuit 51, the switching circuit 54 of the third switching circuit 300 transistor 7 and at the same time, the transistor 8 of the first switching circuit 100 is turned on. At this time, since the resistance 12 of the first switching circuit 100 is set to a value larger than the resistance 11 of the third switching circuit 300, the IGBT 25 performs the switching operation gently.
[0027]
At time T _3, when the turn-on operation is also terminated operation of the one-shot circuit 52 approaches the completion, at the same time to turn off the first transistor 8 of the switching circuit 100 by switching circuit 54, the third switching circuit 300 transistor 7 Is turned on, the gate voltage V _GE rapidly rises, and the IGBT 25 is completely turned on.
[0028]
When the on-off signal is changed from ON to OFF at time T _4, and at the same time turning off the transistor 7 of the third switching circuit 300 by switching circuit 54 to turn on the transistor 9 of the fourth switching circuit 400, fourth Of the capacitor between the gate and the emitter of the IGBT 25 through the resistor 13 of the switching circuit 400 of FIG. The capacitor is the gate voltage _{V GE} along with being discharged downward, the time _{T 5} than IGBT25 starts turn-off operation.
[0029]
When the time T ₅ than IGBT25 starts turn-off operation, the voltage change rate is operated one-shot circuit 53 turns to the positive polarity of the output of the voltage change rate detecting circuit 51, the switching circuit 54 of the fourth switching circuit 400 transistor At the same time as turning off the transistor 9, the transistor 10 of the second switching circuit 200 is turned on. At this time, since the resistance 14 of the second switching circuit 200 is set to a larger value than the resistance 13 of the fourth switching circuit 400, the IGBT 25 performs the switching operation gently.
[0030]
At time T _6, when the turn-off operation is also terminated operation of the one-shot circuit 53 closer to the end, at the same time turning off the transistor 10 of the second switching circuit 200 by switching circuit 54, the fourth switching circuit 400 transistor 9 Is turned on, the gate voltage V _GE rapidly drops and saturates, the IGBT 25 is completely turned off, and prepares for the next on operation by the on / off signal.
[0038]
FIG. 7 is a block diagram of a drive circuit for a self-extinguishing semiconductor device according to a second embodiment of the present invention. Components having the same functions as the circuits shown in FIGS. The description is omitted.
That is, in FIG. 7, a potential difference detection circuit 71 including a diode 71a and a resistor 71b for detecting a potential difference between a collector terminal of the IGBT 25 and a positive terminal of the power supply 15 for ON, and a potential of the collector terminal of the IGBT 25 A first one-shot circuit 72 that outputs a pulse shorter than the ON period of the ON / OFF signal when the potential of the ON / OFF signal becomes lower than the potential of the positive terminal, and the potential of the collector terminal becomes higher than the potential of the positive terminal of the ON power supply 15 And a switching circuit 54 for selecting one of the switching circuits 100 to 400.
[0039]
The operation of the drive circuit of FIG. 7 will be described below with reference to the operation waveform diagram of FIG. When the on-off signal at time _{T 1} is changed from OFF to ON, the transistor 7 of the third switching circuit 300 is turned on by the switching circuit 54, the third on-power source 15 through the resistor 11 of the switching circuit 300 IGBT25 Charge the capacitor between the gate and the emitter. The gate voltage _{V GE} along with the capacitor is charged to rise, from the time _{T 2} IGBT25 starts turn-on operation.
[0040]
If from time T ₂ IGBT25 starts turn-on operation, the potential difference detection circuit 71 outputs that the potential of the collector terminal of the IGBT25 is lower than the potential of the positive terminal of the on power source 15, the one-shot circuit 72 by the output The switching circuit 54 operates to turn off the transistor 7 of the third switching circuit 300 and turn on the transistor 8 of the first switching circuit 100 at the same time. At this time, since the resistance 12 of the first switching circuit 100 is set to a value larger than the resistance 11 of the third switching circuit 300, the IGBT 25 performs the switching operation gently.
[0041]
At time T _3, when the turn-on operation is also terminated operation of the one-shot circuit 72 approaches the completion, at the same time to turn off the first transistor 8 of the switching circuit 100 by switching circuit 54, the third switching circuit 300 transistor 7 Is turned on, the gate voltage V _GE rapidly rises, and the IGBT 25 is completely turned on.
[0042]
When the on-off signal is changed from ON to OFF at time T _4, and at the same time turning off the transistor 7 of the third switching circuit 300 by switching circuit 54 to turn on the transistor 9 of the fourth switching circuit 400, fourth Of the capacitor between the gate and the emitter of the IGBT 25 through the resistor 13 of the switching circuit 400 of FIG. The capacitor is the gate voltage _{V GE} along with being discharged downward, the time _{T 5} than IGBT25 starts turn-off operation.
[0043]
When the time T ₅ than IGBT25 starts turn-off operation, the voltage difference detecting circuit 71 outputs that the potential of the collector terminal of the IGBT25 is higher than the potential of the positive terminal of the on power source 15, the one-shot circuit 73 by the output Operates, and the switching circuit 54 turns off the transistor 9 of the fourth switching circuit 400 and simultaneously turns on the transistor 10 of the second switching circuit 200. At this time, since the resistance 14 of the second switching circuit 200 is set to a larger value than the resistance 13 of the fourth switching circuit 400, the IGBT 25 performs the switching operation gently.
[0044]
At time T _6, when the turn-off operation is also terminated operation of the one-shot circuit 73 approaches the completion, at the same time turning off the transistor 10 of the second switching circuit 200 by switching circuit 54, the fourth switching circuit 400 transistor 9 Is turned on, the gate voltage V _GE rapidly drops and saturates, the IGBT 25 is completely turned off, and prepares for the next on operation by the on / off signal.
[0045]
As described above, in the first to third embodiments of the present invention, when the IGBT 25 or the IGBT 25a is turned on, the operation delay is initially minimized by the resistor 11 having a small value, and becomes large when the turn-on operation is actually started. Surge voltage ΔV _D is suppressed by reducing the value of [di / dt] by performing gradual switching with the resistor 12 having a small value, and after the collector current rises, switching is rapidly performed with the resistor 11 having a small value to increase the turn-on loss. I try to prevent it.
[0046]
Also, when the IGBT is turned off, the discharge is initially performed by the resistor 14 having a small value to prevent an increase in operation delay with respect to the on / off signal of the IGBT, and when the IGBT starts to be turned off, the resistor 13 having a large value is used. performs switching, said reduced [-di / dt] to perform the suppression of the surge voltage [Delta] V _P, by switching the resistor 13 again smaller value when the IGBT is completely approaches the oFF state, the oN-oFF signal In preparation for the next ON operation.
[0047]
1, 3, 5, and 7, the resistor 12 and the transistor 8 of the first switching circuit 100, the resistor 14 and the transistor 10 of the second switching circuit 200, and the resistor 11 of the third switching circuit 300. , Transistor 7 and the resistor 13 of the fourth switching circuit 400 and the transistor 9 perform the same operations as those of the circuits of FIGS. 1, 3, 5 and 7 even if the connection order is changed in each circuit. .
[0048]
The switching circuit 43 shown in FIG. 1 and the switching circuit 54 shown in FIGS. 3, 5 and 7 have the same circuit function, and are different only in connection to the first to fourth switching circuits. is there.
[0049]
【The invention's effect】
According to the present invention, during the actual turn-on operation of the IGBT as the self-extinguishing semiconductor device of the voltage control type, the output impedance of the drive circuit is increased for a certain period, the switching operation is moderated, and the surge voltage ΔV _D is suppressed. After the turn-on is completed, the output impedance is lowered to prevent an increase in the turn-on loss, and during the actual turn-off operation of the IGBT, the output impedance of the drive circuit is increased for a certain period to make the switching operation gradual, thereby reducing the surge. since the voltage [Delta] V _P can be suppressed, reliable, it can be applied to the power converter which is required high-speed operation bRIEF dESCRIPTION oF tHE dRAWINGS
Figure 1 is a waveform chart for explaining the diagram Figure 2 the operation of the Figure 1 of the driving circuit of the self-turn-off type semiconductor device showing the configuration of a basic circuit of the present invention Figure 3 the first embodiment of the present invention configuration diagram of a drive circuit of the self-turn-off type semiconductor device of an example 4 is a waveform chart for explaining the operation of Figure 3 Figure 5 drive circuit of self-turn-off type semiconductor device showing another embodiment of the present invention FIG. 6 is a waveform diagram illustrating the operation of FIG. 5. FIG. 7 is a configuration diagram of a self-extinguishing type semiconductor element driving circuit according to a second embodiment of the present invention. FIG. 8 is an operation of FIG. FIG. 9 is a configuration diagram of a general power converter using an IGBT. FIG. 10 is an operation explanatory diagram of FIG. 9. FIG. 11 is an operational explanatory diagram of FIG.

Claims (3)

In a drive circuit for a voltage-controlled self-extinguishing semiconductor device,
The driving circuit includes:
A drive power supply in which an on power supply and an off power supply are connected in series,
Detecting a rate of voltage change between a collector and an emitter terminal or a drain and a source terminal of the self-extinguishing semiconductor device that operates based on an on / off signal of the self-extinguishing semiconductor device externally supplied to the driving circuit. A voltage change rate detection circuit,
A first one-shot circuit that outputs a pulse shorter than the ON period of the ON / OFF signal when the voltage change rate changes to a negative polarity;
A second one-shot circuit that outputs a pulse having a predetermined width when the voltage change rate changes to a positive polarity,
First to fourth switching circuits each including a series circuit of a resistor and a transistor;
A first switching series circuit formed by connecting a first switching circuit and a second switching circuit in series,
Similarly, a second switching series circuit formed by connecting a third switching circuit and a fourth switching circuit in series,
A switching circuit for selecting and conducting the transistors of the first to fourth switching circuits;
The drive power supply and the first and second switching series circuits are respectively connected in parallel,
Connecting a connection point between an on power source and an off power source of the driving power source and an emitter terminal or a source terminal of the self-extinguishing semiconductor element;
A connection point between the first switching circuit and the second switching circuit, a connection point between the third switching circuit and the fourth switching circuit, and a gate terminal of the self-extinguishing type semiconductor element were connected in parallel. A driving circuit for a self-extinguishing type semiconductor device, characterized by comprising: In a drive circuit for a voltage-controlled self-extinguishing semiconductor device,
The driving circuit includes:
A drive power supply in which an on power supply and an off power supply are connected in series,
Detecting a potential difference between a collector terminal or a drain terminal of the self-extinguishing semiconductor device which operates based on an on / off signal of the self-extinguishing semiconductor device externally supplied to the driving circuit and a positive terminal of an ON power supply. Potential difference detection circuit,
A first one-shot circuit that outputs a pulse shorter than the ON period of the ON / OFF signal when the potential of the collector terminal or the drain terminal becomes lower than the potential of the positive terminal of the power supply for ON;
A second one-shot circuit that outputs a pulse having a predetermined width when the potential of the collector terminal or the drain terminal becomes higher than the potential of the positive terminal of the power supply for on;
First to fourth switching circuits each including a series circuit of a resistor and a transistor;
A first switching series circuit formed by connecting a first switching circuit and a second switching circuit in series,
Similarly, a second switching series circuit formed by connecting a third switching circuit and a fourth switching circuit in series,
A switching circuit for selecting and conducting the transistors of the first to fourth switching circuits;
The drive power supply and the first and second switching series circuits are respectively connected in parallel,
Connecting a connection point between an on power source and an off power source of the driving power source and an emitter terminal or a source terminal of the self-extinguishing semiconductor element;
A connection point between the first switching circuit and the second switching circuit, a connection point between the third switching circuit and the fourth switching circuit, and a gate terminal of the self-extinguishing type semiconductor element were connected in parallel. A driving circuit for a self-extinguishing type semiconductor device, characterized by comprising: A driving circuit for a self-extinguishing semiconductor device according to claim 1 or 2,
The resistance value of the resistance of the first switching circuit is set to a value larger than the resistance value of the resistance of the third switching circuit,
In addition, the resistance value of the resistance of the second switching circuit is larger than the resistance value of the resistance of the fourth switching circuit.

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