JP3582259B2 - Preparation method of anticorrosion titanium oxide film - Google Patents
Preparation method of anticorrosion titanium oxide film Download PDFInfo
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- JP3582259B2 JP3582259B2 JP28441696A JP28441696A JP3582259B2 JP 3582259 B2 JP3582259 B2 JP 3582259B2 JP 28441696 A JP28441696 A JP 28441696A JP 28441696 A JP28441696 A JP 28441696A JP 3582259 B2 JP3582259 B2 JP 3582259B2
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims description 42
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title claims description 40
- 238000002360 preparation method Methods 0.000 title 1
- 230000007797 corrosion Effects 0.000 claims description 25
- 238000005260 corrosion Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 74
- 239000004065 semiconductor Substances 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000005536 corrosion prevention Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005466 cherenkov radiation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
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- Coating By Spraying Or Casting (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Description
【０００１】
【発明の属する技術分野】
本発明は、防食用チタン酸化膜の作製方法および防食用チタン酸化膜に係わり、特に、原子炉構造材に対して光電極反応を利用して防食を行う技術に関するものである。
【０００２】
【従来の技術】
水を冷却材としている軽水炉では、炉心を囲んでいる原子炉圧力容器の内部構造物の大部分が、高温状態の原子炉冷却水中に配され、炉心から放射される放射線の雰囲気で使用されるため、構成材料にあっては、原子炉冷却水に対する耐食性を有するとともに、放射線の水分解による影響等を考慮するなど品質管理において格別な配慮が払われている。
【０００３】
防食用チタン酸化膜の作製方法および防食用チタン酸化膜に関連する技術として、例えば、特開平０７−２７０５９２号公報「原子炉構造材及びその防食方法」に、原子炉圧力容器の内部構造物に採用されるチタン酸化膜の作製方法に関連する技術が提案されている。
この技術は、チタン酸化物等から作製されるチタン酸化膜の半導体特性を利用したもので、放射線またはチェレンコフ放射性光の照射時に、非消耗型のアノード反応を生じさせ、チタン酸化膜（半導体膜）近傍の原子炉構造材の表面の腐食電位を下げて金属の腐食を防止するようにしている。
【０００４】
そして、上記公報には、構造材の表面に酸素の介在雰囲気でＴｉを溶射することにより、ＴｉＯ２ を形成する技術が記載されている。
【０００５】
【発明が解決しようとする課題】
しかしながら、ＴｉＯ２ を高温で形成すると、溶融過程を経由することによって結晶化が損なわれ、半導体としての機能低下が生じ易くなる。
【０００６】
本発明は、このような課題に鑑みてなされたものであり、以下の目的を達成するものである。
▲１▼ 半導体の機能低下を起こすことなく、ＴｉＯ２ 粒体を効果的に被防食材の表面に付着させること。
▲２▼ ＴｉＯ２ 粒体の残存割合を大きくし、防食性を高めること。
【０００７】
【課題を解決するための手段】
ＴｉＯ２粒体を溶射材としてプラズマ流および２次ガス流に乗せ、原子炉圧力容器の構成材料の表面に溶射することにより、半導体特性を有するチタンガス酸化膜を作製する。
この時のプラズマガスとしてＡｒガスを選択し、２次ガスとしてＨｅガスおよびこのＨｅガスより少量のＨ２ガスを使用する。
プラズマガス流量に対して２次ガス流量を８０〜２４０％に設定するとともに、２次ガス中のＨ２ガス流量をＨｅガス流量の２〜４％に設定する。
また、２次ガス中におけるＨｅガス流量を、チタン酸化膜の生成開始時にＡｒガス流量よりも少なくしておき、以下、漸次増加させることにより、チタン酸化膜の表面付近におけるＴｉＯ２粒体の占める割合を多くし、チタン酸化膜を傾斜構造にする。
【０００８】
【発明の実施の形態】
以下、本発明に係る防食用チタン酸化膜の作製方法および防食用チタン酸化膜の一実施形態について、図１を参照して説明する。
【０００９】
図１にあって、符号１はプラズマ発生手段、２はキャリアガス供給手段、３はキャリアガス供給口、４はプラズマ発生部、５は溶射材供給手段、６は溶射材供給口、Ｘは被防食材、Ｙはチタン酸化膜、Ｐはプラズマ流を示している。
【００１０】
プラズマ発生手段１にあっては、キャリアガス供給手段２からプラズマガスとしてＡｒガス、２次ガスとしてＨｅガスおよび微量のＨ２ ガスを選択使用し、これらのプラズマガスおよび２次ガスをキャリアガス供給口３を介してプラズマ発生部４に供給して、プラズマ化するものである。また、溶射材供給手段５からＴｉＯ２ 粒体（粒径：１〜数１０μｍ）を溶射材供給口６を介して供給し、プラズマ流Ｐに乗せて、例えば、距離１２０ｍｍ離れた被防食材Ｘの表面に溶射付着させ、チタン酸化膜Ｙを形成するようにしている。この際に、チタン酸化膜Ｙの厚さは１００〜５００μｍ程度に設定される。
【００１１】
【実施例】
次に、本発明に係わる防食用チタン酸化膜の実施例について、図２ないし図６を参照して説明する。
【００１２】
図２は、２次ガスとして混合されるガスの割合を変化させて、チタン酸化膜Ｙのサンプルを作製し、このときの腐食電位の降下率の変化をグラフに示したものである。
サンプルは、プラズマ電流を４００〜６００Ａに設定し、プラズマガスとしてＡｒガスを４０〜６０リットル／分使用し、２次ガスとしてＨｅガスとＨ２ ガスとからなる混合ガスを使用するとともに、ＨｅガスとＨ２ ガスとの流量を変化させたものを複数作製した。
【００１３】
図２はＡｒガス流量５０リットル／分に固定し、ＨｅガスおよびＨ２ ガスを変化させた場合の腐食電位の降下率を示している。この結果に着目すると、Ｈｅガスにあっては、ガス流量が４０〜１３０リットル／分の範囲で腐食電位の降下率が０．８以上となっており、また、Ｈ２ ガスにあっては、０〜５リットル／分の範囲で腐食電位の降下率が０．８以上となっている。これらの腐食電位の降下率は、数値が大きいほど防食効果が高いことを意味する。つまり、Ｈｅガスは、流量が多いほど良く、Ｈ２ ガスは流量が少ないほど良い結果を示している。
【００１４】
しかし、複数のサンプルを詳細に検討した結果、Ｈｅガス流量が１５０リットル／分以上であるとチタン酸化膜Ｙの付着性が悪化する傾向が現れ、Ｈ２ ガスについては、流量が１リットル／分未満である場合にチタン酸化膜Ｙの付着性が悪化する傾向が現れた。
したがって、Ｈｅガス流量の有効範囲は４０〜１２０リットル／分、Ｈ２ ガス流量の有効範囲は１〜２リットル／分であると推定される。
また、Ａｒガス流量を４０〜６０リットル／分の範囲で変動させた結果、概細、図２に示したものと類似する結果が得られた。
【００１５】
図３および図４は、チタン酸化膜Ｙの走査電子顕微鏡写真（ＳＥＭ写真）を示している。図３は、８０リットル／分のＨｅガスと１リットル／分のＨ２ ガスとを混合した２次ガスを使用して作製したチタン酸化膜Ｙのサンプルの表面状態を示す。図４は、１リットル／分のＨ２ ガスのみ（Ｈｅガス流量：０リットル／分）で作製したチタン酸化膜Ｙのサンプルの表面を示している。
この場合、図３にあっては、ＴｉＯ２ 粒体が、数〜２０μｍの粉体形状を残した状態で一部が溶着しているのが認められるのに対し、図４にあっては、ＴｉＯ２ 粒体の粒状形状がほとんど認められず、かなり溶融した状態で被防食材Ｘに溶着しているのがわかる。
【００１６】
図５は、前記図３に示したサンプルのＸ線回析結果であり、図６は、前記図４に示したサンプルのＸ線回析結果を示している。
【００１７】
図３に示すサンプルのＸ線チャートは、図５に示すように、比較対象のルチル型ＴｉＯ２ のものとほぼ一致している。つまり、Ｈｅガスを８０リットル／分で使用した場合、被防食材Ｘの表面には、極めて良好な状態でＴｉＯ２ 粒体の粒状形状が残存する。
【００１８】
図４に示すサンプルのＸ線チャートは、図６に示すように比較対象のルチル型ＴｉＯ２ のものと若干異なっている。つまり、Ｈｅガスを使用しない場合、Ｈｅガス８０リットル／分を使用した場合と比べ、かなり溶融した状態で被防食材Ｘに溶着し、ＴｉＯ２ 粒体形状の残存性が損なわれている。
したがって、プラズマ溶射の最適条件は、２次ガス流量がプラズマガス流量の１００〜３００％，２次ガス中のＨ２ ガス流量が、Ｈｅガス流量の１〜３％の範囲となる。
【００１９】
なお、本発明にあっては、２次ガス中におけるＨｅガス流量を、チタン酸化膜Ｙの生成初期にＡｒガス（プラズマガス）流量よりも少なくしておき、漸次増加させることにより、チタン酸化膜Ｙの表面付近におけるＴｉＯ２ 粒体の占める割合を多くし、チタン酸化膜Ｙを傾斜構造にする技術が採用されるが、粒体の占める割合を段階的に変化させて傾斜構造とする技術を包含するものである。
【００２０】
【発明の効果】
本発明に係る防食用チタン酸化膜の作製方法および防食用チタン酸化膜によれば、以下の効果を奏する。
（１） ＴｉＯ２ 粒体をプラズマ流に乗せて溶射する際に、Ａｒガス，Ｈｅガスおよび微量のＨ２ ガスを使用することにより、半導体の機能低下を起こすことなく、防食用チタン酸化膜を被防食材の表面に効果的に付着させ、防食性を高めることができる。
（２） プラズマガス流のＡｒガス，Ｈｅガス，微量のＨ２ ガスの流量比を設定して、Ｈｅガス流量をチタン酸化膜の作製とともに増加させることにより、表面付近におけるＴｉＯ２ 粒体の占める割合を多くした傾斜構造とし、特に、チタン酸化膜表面に半導体特性を向上させることができる。
（３） チタン酸化膜に半導体特性を付与することにより、放射線および水中環境における原子炉構造材等の防食性を向上させることができる。
【図面の簡単な説明】
【図１】本発明に係わる防食用チタン酸化膜の作製方法の一実施形態を示すブロック図を併記した正断面図である。
【図２】本発明に係わる防食用チタン酸化膜の実施例におけるガス流量と腐食電位の降下率との関係を示す分布図である。
【図３】実施例において、Ｈｅガスを８０リットル／分供給することによって作製したチタン酸化膜の走査電子顕微鏡写真（ＳＥＭ写真）である。
【図４】実施例において、Ｈｅガスを０にして作製した防食用チタン酸化膜の走査電子顕微鏡写真（ＳＥＭ写真）である。
【図５】図３に示すサンプルのＸ線チャートである。
【図６】図４に示すサンプルのＸ線チャートである。
【符号の説明】
１ プラズマ発生手段
２ キャリアガス供給手段
３ キャリアガス供給口
４ プラズマ発生部
５ 溶射材供給手段
６ 溶射材供給口
Ｐ プラズマ流
Ｘ 被防食材
Ｙ チタン酸化膜[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for producing a titanium oxide film for corrosion protection and a titanium oxide film for corrosion protection, and more particularly to a technique for performing corrosion protection on a reactor structural material using a photoelectrode reaction.
[0002]
[Prior art]
In a light water reactor using water as a coolant, most of the internal structure of the reactor pressure vessel surrounding the core is placed in high temperature reactor cooling water and used in an atmosphere of radiation emitted from the core Therefore, the constituent materials have corrosion resistance to the reactor cooling water, and special attention has been paid to quality control, for example, by taking into account the effects of water decomposition of radiation.
[0003]
Examples of a method for preparing a titanium oxide film for corrosion protection and a technique related to the titanium oxide film for corrosion protection include, for example, Japanese Patent Application Laid-Open No. 07-270592, entitled “Reactor Structural Materials and Corrosion Protection Method” Techniques related to a method of manufacturing a titanium oxide film to be employed have been proposed.
This technology utilizes the semiconductor characteristics of a titanium oxide film made of titanium oxide or the like, and causes a non-consumable anodic reaction when irradiated with radiation or Cherenkov radiation, thereby producing a titanium oxide film (semiconductor film). The corrosion potential of the surface of the nearby reactor structural material is lowered to prevent metal corrosion.
[0004]
The above publication describes a technique for forming TiO 2 by spraying Ti on the surface of a structural material in an atmosphere containing oxygen.
[0005]
[Problems to be solved by the invention]
However, when TiO 2 is formed at a high temperature, crystallization is impaired through a melting process, and the function as a semiconductor is likely to be deteriorated.
[0006]
The present invention has been made in view of such problems, and achieves the following objects.
{Circle around (1)} The TiO 2 particles are effectively deposited on the surface of the material to be protected without causing a deterioration in the function of the semiconductor.
{Circle around (2)} To increase the residual ratio of the TiO 2 granules to enhance the corrosion resistance.
[0007]
[Means for Solving the Problems]
A titanium gas oxide film having semiconductor properties is produced by placing TiO 2 particles as a thermal spray material on a plasma flow and a secondary gas flow and spraying the thermal spray on a surface of a constituent material of a reactor pressure vessel .
At this time, Ar gas is selected as the plasma gas, and He gas and a smaller amount of H 2 gas than this He gas are used as the secondary gas.
And sets to 80-240% of the secondary gas flow to the plasma gas flow rate, setting the H 2 gas flow rate in the secondary gas to 2-4% of the He gas flow rate.
Further, the flow rate of the He gas in the secondary gas is set to be smaller than the flow rate of the Ar gas at the start of the formation of the titanium oxide film, and is gradually increased thereafter, so that the TiO 2 particles near the surface of the titanium oxide film are reduced. The occupation ratio is increased, and the titanium oxide film has an inclined structure.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of a method for manufacturing a titanium oxide film for corrosion protection and an embodiment of a titanium oxide film for corrosion protection according to the present invention will be described with reference to FIG.
[0009]
In FIG. 1, reference numeral 1 denotes plasma generation means, 2 denotes carrier gas supply means, 3 denotes a carrier gas supply port, 4 denotes a plasma generation section, 5 denotes a spray material supply means, 6 denotes a spray material supply port, and X denotes a coating material. An anticorrosion material, Y indicates a titanium oxide film, and P indicates a plasma flow.
[0010]
In the plasma generating means 1, Ar gas is used as the plasma gas from the carrier gas supply means 2, He gas and a trace amount of H 2 gas are selectively used as the secondary gas, and these plasma gases and the secondary gas are supplied to the carrier gas. It is supplied to the plasma generating section 4 through the
[0011]
【Example】
Next, an embodiment of a titanium oxide film for corrosion protection according to the present invention will be described with reference to FIGS.
[0012]
FIG. 2 is a graph showing a change in the rate of decrease in the corrosion potential at this time by preparing a sample of the titanium oxide film Y by changing the ratio of the gas mixed as the secondary gas.
For the sample, the plasma current was set to 400 to 600 A, Ar gas was used as the plasma gas at 40 to 60 liters / minute, and a mixed gas of He gas and H 2 gas was used as the secondary gas, and He gas was used. those with varying flow rate of H 2 gas was more prepared.
[0013]
FIG. 2 shows the drop rate of the corrosion potential when the He gas and the H 2 gas are changed while the Ar gas flow rate is fixed at 50 liter / min. Focusing on this result, in the case of He gas, the rate of decrease in corrosion potential is 0.8 or more when the gas flow rate is in the range of 40 to 130 L / min, and in the case of H 2 gas, In the range of 0 to 5 liters / min, the rate of decrease in corrosion potential is 0.8 or more. The larger the numerical value of these corrosion potential drop rates, the higher the corrosion prevention effect. That is, the higher the flow rate of the He gas, the better the result, and the lower the flow rate of the H 2 gas, the better the result.
[0014]
However, as a result of examining a plurality of samples in detail, when the He gas flow rate is 150 liters / minute or more, the adhesion of the titanium oxide film Y tends to deteriorate, and the flow rate of H 2 gas is 1 liter / minute. If the ratio is less than the above range, the adhesion of the titanium oxide film Y tends to deteriorate.
Therefore, the effective range of the He gas flow rate is estimated to be 40 to 120 L / min, and the effective range of the H 2 gas flow rate is estimated to be 1 to 2 L / min.
Further, as a result of changing the Ar gas flow rate in the range of 40 to 60 liters / minute, a result roughly similar to that shown in FIG. 2 was obtained.
[0015]
3 and 4 show scanning electron microscope photographs (SEM photographs) of the titanium oxide film Y. Figure 3 shows the surface state of the samples 80 l / min of He gas and 1 liter / min H 2 gas and the titanium oxide film was prepared using a mixed secondary gas Y. FIG. 4 shows the surface of a sample of the titanium oxide film Y produced using only 1 liter / minute of H 2 gas (He gas flow rate: 0 liter / minute).
In this case, in FIG. 3, it is recognized that the TiO 2 particles are partially welded in a state of leaving a powder shape of several to 20 μm, whereas in FIG. The granular shape of the TiO 2 particles is hardly observed, and it can be seen that the TiO 2 particles are welded to the material X to be protected in a considerably molten state.
[0016]
FIG. 5 shows an X-ray diffraction result of the sample shown in FIG. 3, and FIG. 6 shows an X-ray diffraction result of the sample shown in FIG.
[0017]
The X-ray chart of the sample shown in FIG. 3 is almost the same as that of the rutile type TiO 2 to be compared, as shown in FIG. That is, when He gas is used at a rate of 80 liters / minute, the TiO 2 particles remain in a very good state on the surface of the material X to be protected.
[0018]
The X-ray chart of the sample shown in FIG. 4 is slightly different from that of the rutile type TiO 2 to be compared as shown in FIG. That is, when He gas is not used, compared with the case where He gas is used at 80 liters / minute, it is welded to the anticorrosion material X in a considerably molten state, and the persistence of the TiO 2 particle shape is impaired.
Thus, optimum conditions for plasma spraying 100 to 300% of the secondary gas flow rate is the plasma gas flow rate, H 2 gas flow rate in the secondary gas becomes 1 to 3% of the He gas flow rate.
[0019]
In the present invention, the flow rate of the He gas in the secondary gas is set to be smaller than the flow rate of the Ar gas (plasma gas) in the initial stage of the formation of the titanium oxide film Y, and is gradually increased. A technique of increasing the proportion of the TiO 2 particles in the vicinity of the surface of Y and making the titanium oxide film Y have an inclined structure is adopted. Includes
[0020]
【The invention's effect】
According to the method for producing a corrosion-resistant titanium oxide film and the corrosion-resistant titanium oxide film of the present invention, the following effects can be obtained.
(1) When spraying TiO 2 particles on a plasma flow, Ar gas, He gas and a small amount of H 2 gas are used, so that the titanium oxide film for anticorrosion can be formed without deteriorating the function of the semiconductor. It can be effectively attached to the surface of the anticorrosion material to enhance the anticorrosion property.
(2) By setting the flow ratio of Ar gas, He gas, and a small amount of H 2 gas in the plasma gas flow, and increasing the He gas flow along with the production of the titanium oxide film, the TiO 2 particles occupy near the surface. By adopting the inclined structure having a large ratio, the semiconductor characteristics can be particularly improved on the surface of the titanium oxide film.
(3) By imparting semiconductor properties to the titanium oxide film, it is possible to improve the corrosion resistance of the reactor structural material and the like in radiation and underwater environments.
[Brief description of the drawings]
FIG. 1 is a front sectional view together with a block diagram showing one embodiment of a method for producing a corrosion-resistant titanium oxide film according to the present invention.
FIG. 2 is a distribution diagram showing a relationship between a gas flow rate and a drop rate of a corrosion potential in an example of a titanium oxide film for corrosion protection according to the present invention.
FIG. 3 is a scanning electron micrograph (SEM photograph) of a titanium oxide film produced by supplying He gas at a rate of 80 liters / min.
FIG. 4 is a scanning electron micrograph (SEM photograph) of a titanium oxide film for anticorrosion manufactured by setting He gas to 0 in Examples.
FIG. 5 is an X-ray chart of the sample shown in FIG.
6 is an X-ray chart of the sample shown in FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Plasma generation means 2 Carrier gas supply means 3 Carrier gas supply port 4
Claims (2)
プラズマガスとしてＡｒガスを選択し、２次ガスとしてＨｅガスおよび該Ｈｅガスより少量のＨ２ガスを使用し、
２次ガス中のＨｅガス流量をプラズマガス流量に対して８０〜２４０％に設定するとともに、２次ガス中のＨ ２ ガス流量をプラズマガス流量に対して２〜４％に設定する
ことを特徴とする防食用チタン酸化膜の作製方法A method for producing a titanium oxide film by spraying TiO 2 particles on a surface of a constituent material of a reactor pressure vessel by placing the particles on a plasma flow,
Ar gas is selected as the plasma gas, and He gas and a smaller amount of H 2 gas than the He gas are used as the secondary gas,
He gas flow rate in the secondary gas and sets the 80 to 240% with respect to the plasma gas flow rate, setting the H 2 gas flow rate in the secondary gas to 2-4% with respect to the plasma gas flow rate <br / > A method for producing a titanium oxide film for corrosion protection, characterized by the following:
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|---|---|---|---|
| JP28441696A JP3582259B2 (en) | 1996-10-25 | 1996-10-25 | Preparation method of anticorrosion titanium oxide film |
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| JP28441696A JP3582259B2 (en) | 1996-10-25 | 1996-10-25 | Preparation method of anticorrosion titanium oxide film |
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| JPH10130805A JPH10130805A (en) | 1998-05-19 |
| JP3582259B2 true JP3582259B2 (en) | 2004-10-27 |
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| AU1052601A (en) * | 1999-11-02 | 2001-05-14 | Tomoji Takamasa | Method for improving wettability, and element placed under radiation environment |
| JP4334106B2 (en) * | 2000-03-31 | 2009-09-30 | 株式会社東芝 | Photocatalyst deposition method for nuclear reactor structural materials |
| JP4604153B2 (en) * | 2005-02-18 | 2010-12-22 | 国立大学法人東京海洋大学 | Forming functional coatings with excellent anticorrosion properties |
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