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JP3586731B2 - Manufacturing method of glass master for optical disk - Google Patents
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JP3586731B2 - Manufacturing method of glass master for optical disk - Google Patents

Manufacturing method of glass master for optical disk Download PDF

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JP3586731B2
JP3586731B2 JP21353498A JP21353498A JP3586731B2 JP 3586731 B2 JP3586731 B2 JP 3586731B2 JP 21353498 A JP21353498 A JP 21353498A JP 21353498 A JP21353498 A JP 21353498A JP 3586731 B2 JP3586731 B2 JP 3586731B2
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Prior art keywords
photoresist layer
oxide film
layer
positive
etching
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JP21353498A
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JP2000030308A (en
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正弘 升澤
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Ricoh Co Ltd
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Ricoh Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、光ディスク用スタンパのマスタリング技術に関し、特にハイブリッドCD−R、ハイブリッドCD−RW用のガラス原盤作製方法に関する。
【0002】
【従来の技術】
ピットとグルーブを有する光ディスクにおいて、それぞれの深さはλ/4n、λ/8n(λ:再生波長 n:基板の屈折率)であることが望ましい。そのような光ディスクを得るために、光ディスク原盤におけるフォトレジストのパターン形成もピットとグルーブとで異なるものとする必要がある。
【0003】
従来、フォトレジストのパターンの深さを変えるため、感光させるレーザの強度を利用していた。つまり、弱いレーザパワーで浅いグルーブを形成し、強いレーザパワーで深いピットを形成していた。ピットの深さはフォトレジストの膜厚で決まるが、グルーブの深さはレーザパワーに依存し、露光時のレーザパワーの変動、フォーカスの変動などによりグループの深さに変動が発生しやすい。また、グループの幅の制御も非常に困難である。
【0004】
このような問題を解決するため、図4および図5に示すように、ガラス基板51上に第1フォトレジスト層52、中間層53、第2フォトレジスト層54の順に積層し、中間層53と第2フォトレジスト層54との合計膜厚でグルーブGの深さを制御し(図4)、第1フォトレジスト層52、中間層53、および第2フォトレジスト層54の合計膜厚でピットPの深さを制御する(図5)方法が提案されている。
【0005】
例えば、特開平7−161077号公報に開示されたガラス原盤作製方法では図4、図5に示すように、第2フォトレジスト層54の現像、中間層53のエッチング、第1フォトレジスト層52の現像の順にパターニングを行うことにより、グルーブGとピットPを形成している。
【0006】
【発明が解決しようとする課題】
上記公報記載の方法においては、第2フォトレジスト層54の現像、中間層53のエッチング、第1フォトレジスト層52の現像の順にパターニングを行うことにより、グルーブGとピットPを形成している。
【0007】
ところが、グルーブGのパターニングにおいては、第2フォトレジスト層54の現像、あるいは第2フォトレジスト層54の現像と中間層53のエッチングのみで十分であり、最後の第1フォトレジスト層52の現像を行うと、図4(d)のように中間層部分に段部55(グルーブ底部における段部)が発生する。この段部55が発生するのは、第1フォトレジスト層52の現像を行っているときに、第2フォトレジスト層54の現像も進行してしまうためである〔図4(c)と図4(d)を比較〕。このような段部55は、光ディスクの再生あるいは記録時のノイズの原因となるため好ましくない。
【0008】
また、上記公報記載の方法では、第2フォトレジスト層54の感度が第1フォトレジスト層52の感度よりも高いため、ピットPが段状になる〔図5(d)〕。この場合、特別な問題とはならないが、上記と逆に第2フォトレジスト層54の感度が第1フォトレジスト52層の感度よりも低い場合には、新たな問題が発生する。つまり、ピットPが段状にならないように第1フォトレジスト層52の現像幅を第2フォトレジスト層54の現像幅と同等以上にしようとすると、図5(d)に示すように、第1フォトレジスト層52の現像中に、現像液に溶解しない中間層53の破片53aがガラス原盤全面に散らばってしまう。このような破片53aは、光ディスクの再生あるいは記録時のノイズの原因となるため好ましくない。
【0009】
本発明は、上記問題点に鑑みなされたもので、その目的は、ガラス基板上に第1のフォトレジスト層、中間層、第2のフォトレジスト層の順に積層し、中間層と第2のフォトレジスト層の膜厚でグルーブ深さを制御するとともに、第1のフォトレジスト層、中間層および第2のフォトレジスト層の膜厚でピットの深さを制御してピットとグルーブを同時に形成する光ディスクガラス原盤の作製方法において、グルーブ底部の段部がなく、しかも中間層の破片が残留しないガラス原盤を得ることにある。
【0010】
【課題を解決するための手段】
請求項1に記載の光ディスク用ガラス原盤の作製方法(図1参照)は、ガラス基板11上に第1ポジ型フォトレジスト層12、酸化膜からなる中間層13、第2ポジ型フォトレジスト層14の順に積層された原盤を作製する方法において、第1、第2ポジ型フォトレジスト層12,14を感光させる光量の第1の記録光で第1、第2ポジ型フォトレジスト層12,14に潜像を形成するとともに、第2ポジ型フォトレジスト層14のみを感光させる第1の記録光の光量よりも弱い光量の第2の記録光で第2ポジ型フォトレジスト層14に潜像を形成し〔図1(a)〕、しかる後に第2ポジ型フォトレジスト層14の現像〔図1(b)〕、酸化膜からなる中間層13のエッチング〔図1(c)〕、第1ポジ型フォトレジスト層12の現象〔図1(d)〕、酸化膜からなる中間層13のエッチング〔図1(e)〕の順に処理を行うことを特徴とする。
【0011】
請求項2に記載の光ディスク用ガラス原盤の作製方法(図3参照)は、ガラス基板上31にネガ型フォトレジスト層32、酸化膜からなる中間層33、ポジ型フォトレジスト層34の順に積層された原盤を作製する方法において、ネガ型フォトレジスト層32とポジ型フォトレジスト層34とを感光させる光量の第1の記録光によりネガ型フォトレジスト層32とポジ型フォトレジスト層34とに潜像を形成するとともに、ポジ型フォトレジスト層34のみを感光させる第1の光の光量よりも弱い光量の第2の記録光でポジ型フォトレジスト層34に潜像を形成し〔図3(a)〕、しかる後にポジ型フォトレジスト層34の現像〔図3(b)〕、酸化膜からなる中間層33のエッチング〔図3(c)〕、ネガ型フォトレジスト層32のエッチング〔図3(d)〕、酸化膜からなる中間層33のエッチング〔図3(e)〕の順に処理を行うことを特徴とする。
【0012】
従来技術では、露光後のパターニングは第2のフォトレジスト層の現像、中間層のエッチング、第1のフォトレジスト層の現像の順に行っている(図4)。これに対し請求項1の方法においては、上記のように第2フォトレジスト層の現像、中間層のエッチング、第1フォトレジスト層の現像、さらに中間層のエッチングを行う。また、請求項2の方法では、上記のとおりポジ型フォトレジスト層の現像、中間層のエッチング、ネガ型フォトレジスト層のエッチング、さらに中間層のエッチングを行う。
【0013】
このため、図1(d)と図1(e)の比較、および図5(d)と図5(e)の比較で明らかなように、請求項1,2のいずれの方法によっても、グルーブに発生する段部、およびガラス原盤全面に広がった中間層の破片を最後のエッチング工程でなくすことができる。
【0014】
【実施例】
以下、本発明の実施例を、図面を参照しながら説明する。
実施例1(請求項1に対応)
図1において、ガラス基板11上に第1のポジ型フォトレジストとして、TSMR−V3(東京応化製)をスピンコートにより層厚約1500Åに形成する(第1ポジ型フォトレジスト層12の形成)。その上に、酸化膜からなる中間層13として、ITO(In−SnO)をDCスパッタにより層厚約50Åに形成する。さらにその上に、第2のポジ型フォトレジストとして、TSMR−8900(東京応化製)をスピンコートで層厚約1500Åに形成する(第2ポジ型フォトレジスト層14の形成)。
【0015】
このフォトレジスト盤に、波長457.8nmのArレーザを用い、線速1.2m/sで露光を行う。このとき、第1の記録光の強度を5.0mWにしてピットPを形成し、第2の記録光の強度を3.0mWにしてグルーブGを形成する〔図1(a)〕。
【0016】
露光後、現像液DE−3(東京応化製)で第2フォトレジスト層14の現像を行い〔図1(b)〕、硝酸あるいは塩酸で酸化膜(中間層)13のエッチングを行い〔図1(c)〕、ついで現像液DE−3(東京応化製)で第1フォトレジスト層12の現像を行う〔図1(d)〕。最後に硝酸あるいは塩酸で酸化膜13のエッチングを行う〔図1(e)〕。
【0017】
TSMR−V3はTSMR−8900よりも感度が低いため、ピット部分に酸化膜13による段部15〔図1(d)〕が発生する。このため、第1フォトレジスト層12(TSMR−V3)の現像時に酸化膜13の破片が発生することはない。ところが、グルーブ部分では第1フォトレジスト層12(TSMR−V3)の現像のとき、第1フォトレジスト層12は感光されていないので現像されないが、第2フォトレジスト層14(TSMR−8900)は現像されるため、グルーブ底部に酸化膜13による段部16〔図1(d)〕が発生する。このようなピット部分の段部15およびグルーブ部分の段部(いずれも酸化膜13の一部)は、最後の酸化膜エッチング工程〔図1(e)〕によりなくすことができる。
【0018】
実施例2(請求項1に対応)
図2において、ガラス基盤21上に第1のポジ型フォトレジストとして、TSMR−GP8000(東京応化製)をスピンコートで約1500Å形成する(第1ポジ型フォトレジスト層22の形成)。その上に、酸化膜からなる中間層23として、ITO(In−SnO)をDCスパッタで約50Å形成する。さらにその上に、第2のポジ型フォトレジストとして、TSMR−8900(東京応化製)をスピンコートで約1500Å形成する(第2ポジ型フォトレジスト膜24の形成)。
【0019】
このフォトレジスト盤に、波長457.8nmのArレーザにより線速1.2m/sで露光を行う。このとき、第1の記録光の強度を5.0mWにしてピットPを形成し、第2の記録光の強度を3.0mWにしてグルーブGを形成する〔図2(a)〕。
【0020】
露光後、現像液DE−3(東京応化製)で第2フォトレジスト層24の現像を行い〔図2(b)〕、ついで硝酸あるいは塩酸で酸化膜(中間層)23のエッチングを行い〔図2(c)〕、さらに現像液DE−3(東京応化製)で第1フォトレジスト層22の現像を行い〔図2(d)〕、最後に硝酸あるいは塩酸で酸化膜23のエッチングを行う〔図2(e)〕。
【0021】
TSMR−GP8000はTSMR−8900よりも感度が高いため、第1フォトレジスト層22(TSMR−GP8000)の現像のとき、第2フォトレジスト層24(TSMR−8900)よりも現像速度が速くなる。そのため、酸化膜23の下の第1フォトレジスト層22(TSMR−8900)も現像され、酸化膜23が破片23aとして散乱する〔図2(d)〕。また、グルーブ部分でも第1フォトレジスト層22(TSMR−GP8000)の現像のとき、この第1フォトレジスト層22は感光されていないので現像されないが、第2フォトレジスト層24(TSMR−8900)は現像されるため、グルーブ底部に酸化膜23による段部25が発生する〔図2(d)〕。しかし、このような酸化膜23の破片23aや段部25は、最後の酸化膜エッチング工程〔図2(e)〕でなくすことができる。
【0022】
実施例3(請求項2に対応)
図3において、ガラス基板31上にネガ型フォトレジストとして、FHT−332S(富士フィルム オーリン製)をスピンコートで約1500Å形成する(ネガ型フォトレジスト層32の形成)。その上に、酸化膜からなる中間層33として、ITO(In−SnO)をDCスパッタで約100Å形成する。さらにその上に、ポジ型フォトレジストとして、TSMR−8900(東京応化製)をスピンコートで約1500Å形成する(ポジ型フォトレジスト層34の形成)。
【0023】
このフォトレジスト盤に、波長457.8nmのArレーザにより線速1.2m/sで露光を行う。このとき、第1の記録光の強度を6.0mWにしてグルーブGを形成し、第2の記録光の強度を2.5mWにしてピットPを形成する〔図3(a)〕。
【0024】
露光後、現像液DE−3(東京応化製)でポジ型フォトレジスト層34の現像を行い〔図3(b)〕、ついで硝酸あるいは塩酸で酸化膜(中間層)33のエッチングを行い〔図3(c)〕、さらに現像液DE−3(東京応化製)でネガ型フォトレジスト層32のエッチングを行い〔図3(d)〕、最後に硝酸あるいは塩酸で酸化膜33のエッチングを行う〔図3(e)〕。
【0025】
FHT−332Sはネガ型フォトレジストのため、第1の記録光で感光されると現像液に不溶になるが、第2の記録光では感光されず現像液に容易に溶ける。従って、ネガ型フォトレジスト層32(FHT−332S)のエッチングのとき、ピットが露光された部分では、このネガ型フォトレジスト層32のエッチングがポジ型フォトレジスト層34の現像よりも早いため、酸化膜33の下層のネガ型フォトレジスト層32がエッチングされ、酸化膜33が破片33aとして散乱する〔図3(d)〕。また、グルーブが露光された部分では、ネガ型フォトレジスト層32のエッチングが起こらず、ポジ型フォトレジスト層34のみが現像され、グルーブ底部に酸化膜33の段部35が発生する〔図3(d)〕。このような破片33aや段部35は、最後の酸化膜エッチング工程〔図3(e)〕によりなくすことができる。
【0026】
【発明の効果】
以上の説明で明らかなように、請求項1,2に係るガラス原盤作製方法によれば、グルーブに一時的に発生する酸化膜の段部、およびガラス原盤全面に一時的に散乱状態に発生する酸化膜の破片を、パターニングの最終工程である酸化膜エッチング工程で消失させることができる。このため、本発明で作製されたガラス原盤により、再生・記録時のノイズが小さい高性能の光ディスクを製造することができる。
【図面の簡単な説明】
【図1】本発明の実施例1の工程を示す説明図である。
【図2】本発明の実施例2の工程を示す説明図である。
【図3】本発明の実施例3の工程を示す説明図である。
【図4】従来のガラス原盤作製方法および、その問題点を示す説明図である。
【図5】図4の作製方法に伴う別の問題点を示す説明図である。
【符号の説明】
11,21,31 ガラス基板
12,22 第1ポジ型フォトレジスト層
13,23,33 酸化膜(中間層)
14,24 第2ポジ型フォトレジスト層
15,16,25,35 段部
23a,33a 破片
32 ネガ型フォトレジスト層
34 ポジ型フォトレジスト層
51 ガラス基板
52 第1フォトレジスト層
53 中間層
53a 破片
54 第2フォトレジスト層
55 段部
G グルーブ
P ピット
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a mastering technique for a stamper for an optical disc, and more particularly to a method for producing a glass master for a hybrid CD-R and a hybrid CD-RW.
[0002]
[Prior art]
In an optical disk having pits and grooves, it is desirable that the respective depths are λ / 4n and λ / 8n (λ: reproduction wavelength n: refractive index of the substrate). In order to obtain such an optical disk, it is necessary that the pattern formation of the photoresist on the optical disk master is also different between the pits and the grooves.
[0003]
Conventionally, in order to change the depth of a photoresist pattern, the intensity of a laser to be exposed has been used. That is, a shallow groove is formed with weak laser power, and a deep pit is formed with strong laser power. The depth of the pit is determined by the thickness of the photoresist, but the depth of the groove depends on the laser power, and the depth of the group tends to fluctuate due to the fluctuation of the laser power during exposure, the fluctuation of the focus, and the like. It is also very difficult to control the width of the group.
[0004]
In order to solve such a problem, as shown in FIGS. 4 and 5, a first photoresist layer 52, an intermediate layer 53, and a second photoresist layer 54 are laminated on a glass substrate 51 in this order. The depth of the groove G is controlled by the total thickness of the second photoresist layer 54 (FIG. 4), and the pits P are determined by the total thickness of the first photoresist layer 52, the intermediate layer 53, and the second photoresist layer 54. (FIG. 5) is proposed.
[0005]
For example, in the method of manufacturing a glass master disc disclosed in Japanese Patent Application Laid-Open No. H7-161077, as shown in FIGS. 4 and 5, development of the second photoresist layer 54, etching of the intermediate layer 53, and formation of the first photoresist layer 52 are performed. Grooves G and pits P are formed by patterning in the order of development.
[0006]
[Problems to be solved by the invention]
In the method described in the above publication, grooves G and pits P are formed by performing patterning in the order of development of the second photoresist layer 54, etching of the intermediate layer 53, and development of the first photoresist layer 52.
[0007]
However, in patterning the groove G, only the development of the second photoresist layer 54 or the development of the second photoresist layer 54 and the etching of the intermediate layer 53 are sufficient, and the development of the last first photoresist layer 52 is sufficient. Then, as shown in FIG. 4D, a step 55 (a step at the groove bottom) occurs in the intermediate layer. The step 55 is generated because the development of the second photoresist layer 54 also proceeds while the development of the first photoresist layer 52 is being performed [FIG. 4 (c) and FIG. (D). Such a step portion 55 is not preferable because it causes noise during reproduction or recording of the optical disk.
[0008]
In the method described in the above publication, the sensitivity of the second photoresist layer 54 is higher than the sensitivity of the first photoresist layer 52, so that the pits P are stepped (FIG. 5D). In this case, there is no particular problem, but if the sensitivity of the second photoresist layer 54 is lower than the sensitivity of the first photoresist 52 layer, a new problem arises. That is, if the development width of the first photoresist layer 52 is made equal to or greater than the development width of the second photoresist layer 54 so that the pits P do not become stepped, as shown in FIG. During the development of the photoresist layer 52, the fragments 53a of the intermediate layer 53 that are not dissolved in the developing solution are scattered over the entire surface of the glass master. Such fragments 53a are not preferable because they cause noise during reproduction or recording of the optical disk.
[0009]
The present invention has been made in view of the above problems, and an object of the present invention is to stack a first photoresist layer, an intermediate layer, and a second photoresist layer on a glass substrate in this order, and form an intermediate layer and a second photoresist layer. An optical disk that controls the groove depth by the thickness of the resist layer and controls the depth of the pits by the thickness of the first photoresist layer, the intermediate layer, and the second photoresist layer to form pits and grooves simultaneously It is an object of the present invention to provide a method for producing a glass master, which has no step at the bottom of the groove and in which no fragments of the intermediate layer remain.
[0010]
[Means for Solving the Problems]
The method of manufacturing a glass master for an optical disk according to claim 1 (see FIG. 1) includes a first positive photoresist layer 12, an intermediate layer 13 made of an oxide film, and a second positive photoresist layer 14 on a glass substrate 11. In the method of fabricating the masters stacked in this order, the first and second positive-type photoresist layers 12, 14 are irradiated with the first recording light of the amount of light that exposes the first and second positive-type photoresist layers 12, 14. A latent image is formed, and a latent image is formed on the second positive photoresist layer 14 with a second recording light having a light intensity smaller than the first recording light that exposes only the second positive photoresist layer 14. Then, the second positive type photoresist layer 14 is developed (FIG. 1 (b)), and the intermediate layer 13 made of an oxide film is etched (FIG. 1 (c)). The phenomenon of the photoresist layer 12 [FIG. d)], and performs processing in the order of the etching of the intermediate layer 13 made of an oxide film [Fig. 1 (e)].
[0011]
In the method of manufacturing a glass master for an optical disk according to the second aspect (see FIG. 3), a negative photoresist layer 32, an intermediate layer 33 made of an oxide film, and a positive photoresist layer 34 are laminated on a glass substrate 31 in this order. In the method of manufacturing a master disc, a latent image is formed on the negative photoresist layer 32 and the positive photoresist layer 34 by the first recording light having a light amount that exposes the negative photoresist layer 32 and the positive photoresist layer 34. Is formed, and a latent image is formed on the positive photoresist layer 34 with the second recording light having a light intensity smaller than the light intensity of the first light for exposing only the positive photoresist layer 34 [FIG. After that, development of the positive photoresist layer 34 (FIG. 3B), etching of the intermediate layer 33 made of an oxide film (FIG. 3C), etching of the negative photoresist layer 32 Grayed [FIG 3 (d)], and performs processing in the order of the etching of the intermediate layer 33 made of an oxide film [Fig. 3 (e)].
[0012]
In the prior art, patterning after exposure is performed in the order of development of the second photoresist layer, etching of the intermediate layer, and development of the first photoresist layer (FIG. 4). On the other hand, in the method of the first aspect, the development of the second photoresist layer, the etching of the intermediate layer, the development of the first photoresist layer, and the etching of the intermediate layer are performed as described above. Further, in the method of claim 2, as described above, the development of the positive photoresist layer, the etching of the intermediate layer, the etching of the negative photoresist layer, and the etching of the intermediate layer are performed.
[0013]
Therefore, as is clear from the comparison between FIG. 1D and FIG. 1E and the comparison between FIG. 5D and FIG. Steps generated in the intermediate layer and fragments of the intermediate layer spread over the entire surface of the glass master can be eliminated in the final etching step.
[0014]
【Example】
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Example 1 (corresponding to claim 1)
In FIG. 1, TSMR-V3 (manufactured by Tokyo Ohka) is formed as a first positive type photoresist on a glass substrate 11 to a thickness of about 1500 ° by spin coating (formation of a first positive type photoresist layer 12). On top of this, ITO (In 2 O 3 —SnO 2 ) is formed to a thickness of about 50 ° by DC sputtering as an intermediate layer 13 made of an oxide film. Further thereon, TSMR-8900 (manufactured by Tokyo Ohka) is formed as a second positive type photoresist by spin coating to a thickness of about 1500 ° (formation of the second positive type photoresist layer 14).
[0015]
The photoresist disc is exposed at a linear velocity of 1.2 m / s using an Ar laser having a wavelength of 457.8 nm. At this time, pits P are formed with the intensity of the first recording light being 5.0 mW, and grooves G are formed with the intensity of the second recording light being 3.0 mW (FIG. 1A).
[0016]
After the exposure, the second photoresist layer 14 is developed with a developing solution DE-3 (manufactured by Tokyo Ohka) [FIG. 1B], and the oxide film (intermediate layer) 13 is etched with nitric acid or hydrochloric acid [FIG. (C)] Then, the first photoresist layer 12 is developed with a developer DE-3 (manufactured by Tokyo Ohka) [FIG. 1 (d)]. Finally, the oxide film 13 is etched with nitric acid or hydrochloric acid (FIG. 1E).
[0017]
Since TSMR-V3 has lower sensitivity than TSMR-8900, a step 15 (FIG. 1D) due to the oxide film 13 occurs in the pit portion. Therefore, no fragment of the oxide film 13 is generated during the development of the first photoresist layer 12 (TSMR-V3). However, when developing the first photoresist layer 12 (TSMR-V3) in the groove portion, the first photoresist layer 12 is not exposed because it is not exposed, but the second photoresist layer 14 (TSMR-8900) is not developed. As a result, a step 16 (FIG. 1D) due to the oxide film 13 occurs at the bottom of the groove. Such a step 15 in the pit portion and a step in the groove portion (both of which are part of the oxide film 13) can be eliminated by the final oxide film etching step (FIG. 1E).
[0018]
Example 2 (corresponding to claim 1)
In FIG. 2, TSMR-GP8000 (manufactured by Tokyo Ohka) is formed as a first positive photoresist on a glass substrate 21 by spin coating at about 1500 ° (formation of a first positive photoresist layer 22). On top of this, ITO (In 2 O 3 —SnO 2 ) is formed as an intermediate layer 23 of an oxide film by DC sputtering at about 50 °. Further, TSMR-8900 (manufactured by Tokyo Ohka) is formed thereon as a second positive photoresist by spin coating at about 1500 ° (formation of a second positive photoresist film 24).
[0019]
The photoresist disk is exposed at a linear velocity of 1.2 m / s by an Ar laser having a wavelength of 457.8 nm. At this time, pits P are formed with the intensity of the first recording light being 5.0 mW, and grooves G are formed with the intensity of the second recording light being 3.0 mW (FIG. 2A).
[0020]
After the exposure, the second photoresist layer 24 is developed with a developing solution DE-3 (manufactured by Tokyo Ohka) [FIG. 2 (b)], and then the oxide film (intermediate layer) 23 is etched with nitric acid or hydrochloric acid [FIG. 2 (c)], the first photoresist layer 22 is further developed with a developing solution DE-3 (manufactured by Tokyo Ohka) [FIG. 2 (d)], and finally the oxide film 23 is etched with nitric acid or hydrochloric acid [ FIG. 2 (e)].
[0021]
Since the sensitivity of TSMR-GP8000 is higher than that of TSMR-8900, the development speed of the first photoresist layer 22 (TSMR-GP8000) is faster than that of the second photoresist layer 24 (TSMR-8900). Therefore, the first photoresist layer 22 (TSMR-8900) under the oxide film 23 is also developed, and the oxide film 23 is scattered as fragments 23a (FIG. 2D). Also, when developing the first photoresist layer 22 (TSMR-GP8000) in the groove portion, the first photoresist layer 22 is not developed because it is not exposed, but the second photoresist layer 24 (TSMR-8900) is not developed. Due to the development, a step 25 is formed at the bottom of the groove by the oxide film 23 (FIG. 2D). However, such fragments 23a and step portions 25 of the oxide film 23 can be eliminated in the final oxide film etching step (FIG. 2E).
[0022]
Example 3 (corresponding to claim 2)
In FIG. 3, FHT-332S (manufactured by Fuji Film Orin) is formed on a glass substrate 31 as a negative photoresist by spin coating at about 1500 ° (formation of a negative photoresist layer 32). On top of this, ITO (In 2 O 3 —SnO 2 ) is formed as an intermediate layer 33 of an oxide film by DC sputtering at about 100 °. Further, TSMR-8900 (manufactured by Tokyo Ohka) is formed thereon as a positive photoresist by spin coating at about 1500 ° (formation of a positive photoresist layer 34).
[0023]
The photoresist disk is exposed at a linear velocity of 1.2 m / s by an Ar laser having a wavelength of 457.8 nm. At this time, a groove G is formed with the intensity of the first recording light being 6.0 mW, and a pit P is formed with the intensity of the second recording light being 2.5 mW (FIG. 3A).
[0024]
After the exposure, the positive photoresist layer 34 is developed with a developing solution DE-3 (manufactured by Tokyo Ohka) [FIG. 3 (b)], and the oxide film (intermediate layer) 33 is etched with nitric acid or hydrochloric acid [FIG. 3 (c)], the negative photoresist layer 32 is etched with a developer DE-3 (manufactured by Tokyo Ohka) [FIG. 3 (d)], and the oxide film 33 is finally etched with nitric acid or hydrochloric acid [ FIG. 3 (e)].
[0025]
Since FHT-332S is a negative photoresist, it becomes insoluble in the developing solution when exposed to the first recording light, but is not exposed to the second recording light and is easily dissolved in the developing solution. Accordingly, in the etching of the negative photoresist layer 32 (FHT-332S), since the etching of the negative photoresist layer 32 is faster than the development of the positive photoresist layer 34 in the portions where the pits are exposed, the oxidation is performed. The negative photoresist layer 32 under the film 33 is etched, and the oxide film 33 is scattered as fragments 33a (FIG. 3D). Further, in the portion where the groove is exposed, the etching of the negative photoresist layer 32 does not occur, and only the positive photoresist layer 34 is developed, and a step 35 of the oxide film 33 is generated at the bottom of the groove [FIG. d)]. Such fragments 33a and the steps 35 can be eliminated by the final oxide film etching step (FIG. 3E).
[0026]
【The invention's effect】
As is apparent from the above description, according to the glass master manufacturing method according to the first and second aspects, the oxide film temporarily occurs in the groove and the entire surface of the glass master temporarily scatters. The oxide film fragments can be eliminated in the oxide film etching step which is the final step of patterning. Therefore, a high-performance optical disk with low noise during reproduction / recording can be manufactured using the glass master manufactured in the present invention.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing the steps of Example 1 of the present invention.
FIG. 2 is an explanatory view showing the steps of Example 2 of the present invention.
FIG. 3 is an explanatory view showing the steps of Example 3 of the present invention.
FIG. 4 is an explanatory view showing a conventional method for producing a glass master and its problems.
FIG. 5 is an explanatory view showing another problem with the manufacturing method of FIG. 4;
[Explanation of symbols]
11, 21, 31 Glass substrate 12, 22 First positive photoresist layer 13, 23, 33 Oxide film (intermediate layer)
14, 24 Second positive photoresist layer 15, 16, 25, 35 Stepped portion 23a, 33a Fragment 32 Negative photoresist layer 34 Positive photoresist layer 51 Glass substrate 52 First photoresist layer 53 Intermediate layer 53a Fragment 54 Second photoresist layer 55 Step G Groove P Pit

Claims (2)

ガラス基板上に第1のポジ型フォトレジスト層、酸化膜からなる中間層、第2のポジ型フォトレジスト層の順に積層した原盤を作製する方法において、第1と第2のポジ型フォトレジスト層を感光させる光量の第1の記録光によりこれらのポジ型フォトレジスト層に潜像を形成するとともに、第2のポジ型フォトレジスト層のみを感光させる、第1の記録光の光量よりも弱い光量の第2の記録光で第2のポジ型フォトレジスト層に潜像を形成した後、第2のポジ型フォトレジスト層の現像、酸化膜からなる中間層のエッチング、第1のポジ型フォトレジストの現象、酸化膜からなる中間層のエッチングの順に処理を行うことを特徴とする光ディスク用ガラス原盤の作製方法。In a method of manufacturing a master in which a first positive photoresist layer, an intermediate layer made of an oxide film, and a second positive photoresist layer are sequentially laminated on a glass substrate, the first and second positive photoresist layers are formed. A latent image is formed on these positive photoresist layers by the first recording light having a light quantity for exposing the second positive photoresist layer, and a light quantity weaker than the light quantity of the first recording light. Forming a latent image on the second positive type photoresist layer with the second recording light, developing the second positive type photoresist layer, etching the intermediate layer composed of an oxide film, and forming the first positive type photoresist. A method of manufacturing a glass master for an optical disk, wherein the processing is performed in the order of the phenomenon described above and the etching of the intermediate layer comprising an oxide film. ガラス基板上にネガ型フォトレジスト層、酸化膜からなる中間層、ポジ型フォトレジスト層の順に積層した原盤を作製する方法において、ネガ型フォトレジスト層およびポジ型フォトレジスト層を感光させる光量の第1の記録光によりこれらのフォトレジスト層に潜像を形成するとともに、ポジ型フォトレジスト層のみを感光させる、第1の記録光の光量よりも弱い光量の第2の記録光でポジ型フォトレジスト層に潜像を形成した後、ポジ型フォトレジスト層の現像、酸化膜からなる中間層のエッチング、ネガ型フォトレジスト層のエッチング、酸化膜からなる中間層のエッチングの順に処理を行うことを特徴とする光ディスク用ガラス原盤の作製方法。In a method for manufacturing a master in which a negative photoresist layer, an intermediate layer made of an oxide film, and a positive photoresist layer are laminated in this order on a glass substrate, the light amount of the negative photoresist layer and the positive photoresist layer that is exposed to light is reduced. A latent image is formed on these photoresist layers by the recording light of No. 1 and only the positive type photoresist layer is exposed. After forming a latent image on the layer, processing is performed in the order of development of a positive photoresist layer, etching of an intermediate layer composed of an oxide film, etching of a negative photoresist layer, and etching of an intermediate layer composed of an oxide film. For producing a glass master for an optical disk.
JP21353498A 1998-07-13 1998-07-13 Manufacturing method of glass master for optical disk Expired - Fee Related JP3586731B2 (en)

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