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JP3590231B2 - Contact heating heater - Google Patents
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JP3590231B2 - Contact heating heater - Google Patents

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Publication number
JP3590231B2
JP3590231B2 JP04678997A JP4678997A JP3590231B2 JP 3590231 B2 JP3590231 B2 JP 3590231B2 JP 04678997 A JP04678997 A JP 04678997A JP 4678997 A JP4678997 A JP 4678997A JP 3590231 B2 JP3590231 B2 JP 3590231B2
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Japan
Prior art keywords
head
holder
heater
heat
contact
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JP04678997A
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JPH10247580A (en
Inventor
博史 栗栖
辰也 徳永
博昭 園田
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07141Means for applying energy, e.g. ovens or lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07173Means for moving chips, wafers or other parts, e.g. conveyor belts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

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  • Resistance Heating (AREA)
  • Wire Bonding (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、半導体ベアチップを基板上にダイレクトボンドする際に用いるボンディング用ヒータヘッド等、被加熱物に接触して加熱するようにしたヒータに関する。
【0002】
【従来の技術】
半導体ベアチップを基板上にダイレクトボンドする方法として、異方性導電膜(ACF)等の樹脂系の接着材を使用したACF接続方法、またはマルチチップモジュールに用いるようなAu−Si、Au−Sn、Pb−Sn等の低融点ロウを使用したフリップチップ接続法等が行われている。
【0003】
例えば、フリップチップ接続法では、図6に示す如く多層パッケージの基板20上に半導体チップ21を載置して、その上面からボンディング用ヒータ10のヘッド11で加熱しながら押圧することによって、接合を行っている。この時、両者に備えた半田バンプ22によって、接合するとともにワイヤリングを行うことができる。
【0004】
このようなボンディング用ヒータ10として、熱伝導性の高い窒化アルミニウム質セラミックスを用いたものも用いられていた。これは、図6に示すボンディング用ヒータ10を窒化アルミニウム質セラミックスからなる方形体に形成し、その先端側を半導体チップ21と当接させるヘッド11とし、後端側を他部材と結合するホルダ13とし、側面もしくは内部にAg−Pd、Pt−Pd等の発熱体(不図示)を厚膜印刷の手法で印刷し焼き付けた後、カバーガラスペースト等で覆ったものである(厚膜式セラミックヘッド)。このようなボンディング用ヒータ10に求められる特性としては、まず使用する接着材を軟化もしくは溶融するための熱を半導体チップ21を介して接着材まで効率良く伝える必要がある。
【0005】
また、生産効率の点から、所要温度までの昇温時間が短く、しかもボンディング終了後の接着材が固化するまでの温度降下時間が短いことも重要である。さらに、半導体チップ21を接合する際には、熱と同時に圧力も加えるため、ボンディング用ヒータ10のヘッド11には機械的強度や耐摩耗性、あるいは靱性が要求される。しかし、上記厚膜式セラミックヘッドの場合、熱伝導性の良い窒化アルミニウム質セラミックスを用いているため、発熱体の熱がホルダ13側に逃げやすく、ヘッド11側の加熱効率が悪いと言う問題があった。さらに、厚膜式であるため発熱体とセラミックスとの密着性が悪く、しかも熱膨張差があることから、昇温、降温の熱サイクルを繰り返すうちに発熱体がセラミックスから剥がれたり、頻繁に断線を生じる等の不都合があった。また、ヘッド11を成す窒化アルミニウム質セラミックスは靱性が低いために欠けやすいという問題もあった。
【0006】
そこで、近年、図7に示すように、ホルダ3を低熱伝導セラミックスで構成し、他方、発熱体2aを内部に設けた発熱部2に高熱伝導セラミックスからなる伝熱部1aを接合してヘッド1となし、このヘッド1を上記ホルダ3に凹部3bが形成されるように固定したボンディング用ヒータ10が開発された。このボンディング用ヒータ10を使用する場合は、発熱体2aに通電発熱した状態で、ヘッド1の伝熱部1aを加熱したまま半導体チップに押し当てて、基板上に半田バンプで接合するようにしたものであり、このヒータ10は発熱部2とホルダ3をセラミックで構成し、加熱効率を向上せしめるよう意図したものであった。
【0007】
【発明が解決しようとする課題】
ところで、上記従来技術は非常に有効なものであったが、生産効率に難があり、また、所要温度までの昇温時間をさらに大幅に短くしようとする場合には以下のような課題があった。
【0008】
すなわち、伝熱により放熱がし難いように工夫をしているとはいえ、ヘッドとホルダの当接面積が広いので立ち上がりに時間がかかる。そこで、これを無理に早めようとしてヘッドに大電力を投入した場合、多量の熱がホルダに伝搬してしまいホルダを介して装置本体へも伝わる。そのため装置本体が熱膨張により変形しチップに対するヘッドの平行度に狂いが生じて最終製品に影響を及ぼす恐れがあった。
【0009】
【課題を解決するための手段】
そこで本発明は、発熱体の熱を伝えるためのセラミックス製のヘッドを上記ホルダに対して出入自在とし、且つ被加熱物を押圧し接触加熱する際に、上記ヘッドの上面とホルダが当接するようにヘッドをホルダに装着してなる接触加熱用ヒータを提供せんとするものである。
【0010】
【作用】
上記の如き本発明によれば、上記セラミックス製のヘッドが上記ホルダに対して出入自在であるので、上記ヘッドを加温する際にヘッド上面がホルダと非接触であるようにヘッドを出しておくことによってヘッドはその側面と下面の縁部の狭い領域でのみホルダーと当接し、これによりホルダーへの放熱が最小限に抑えられるので加温時間が大きく短縮される。
【0011】
また、半導体チップを押圧し接触加熱する間、ヘッドの上面がホルダに当接し、ホルダがヘッドを上からしっかりと抑えつけるのでヘッドの平行度を正確に保つことができ、さらに、押圧状態で冷却する際には、ヘッド上面がホルダに当接した状態、すなわち広い領域で当接するので、ヘッドの熱が適量ホルダに伝搬し、その作用により冷却に必要な時間も短い。なお、冷却時は加温時と比べて相対的に熱量が小さいので、ヘッド上面がホルダに当接していてもホルダへの熱の伝搬量は装置に悪影響を与える程度にはならない。
【0012】
以上のように、ヒーターの熱が装置本体へ大量に伝わることを防ぐことができ、加熱効率が良く、これにより生産効率を大幅に向上せしめる。
【0013】
【発明の実施の形態】
以下本発明の実施形態をボンディング用ヒータを例にとって図により説明する。
【0014】
図1に本発明のボンディング用ヒータ(以下、ヒータと略称する)10の端面図を示し、このヒータ10は、低熱伝導セラミックスからなるホルダ3に凹部3bを形成し、一方、発熱体2aを埋設したセラミック製の発熱部2に高熱伝導セラミックスからなる伝熱部1aを接合したヘッド1を上記ホルダ3の凹部3bに嵌合保持したものである。そして、上記ヘッド1はホルダ3に対して出入自在(図1の場合は昇降動自在とも言える)であり、且つヘッド1の動きに伴ってヘッド上面2bと、ホルダ3側の該上面2bとの当接面3cとの間に隙間sが生じるようになっている。
【0015】
ところで、このヒーター10の使用方法を説明するに、図1のようにヘッド上面2bとホルダー3の当接面3cが十分離れた状態で発熱体2aに通電発熱を開始し、ヘッド1が昇温してから、図2に示すようにヘッド1先端の当接面1aを半導体チップ21に押し当てて、接触加熱し、基板20上に半田バンプ22で接合する。この時、ヘッド1の上面2bと装置本体のホルダ3の当接面3cが当接するまでヘッド1が奥方に移動し、ホルダ3がヘッド1を上からしっかりと抑えつけるのでヘッド1が平行度を失うことはない。そして、この状態のまま通電発熱を停止し、ヘッド1を冷却した後、上述の図1の位置にヒータ10を戻すことにより、1サイクルの作業が終了する。
【0016】
すなわち、このヒーター10によれば、電力投入時(通電発熱開始時)にヘッド1がその摺動面4(側面)と下面の縁部の極めて狭い領域のみでとホルダー3と当接し且つホルダ3が低熱伝導セラミックスからなるので、ホルダ3に熱が伝わりにくい。しかも、ヘッド1は高熱伝導セラミックスからなるため、急速昇温が可能であり且つ発熱部2aからの熱をヘッド1の先端から被接触物に良好に伝えることができる。なお、ヘッド1およびホルダ3はセラミックスからなるので耐摩耗性に優れ、摩耗や変形することなく長期間使用することができる。さらにまた、半導体チップを押圧する間、ヘッド1の上面2bがホルダ3に当接し、ホルダ3がヘッド1を上からしっかりと抑えつけるのでヘッド1の平行度を正確に保つことができ、さらに、押圧状態で冷却する際には、ヘッド上面2bがホルダ3に当接した状態、すなわち広い領域で当接するので、ヘッド1の熱が適量ホルダ3に伝搬し、その作用により冷却に必要な時間も短い。なお、冷却時は加温時と比べて相対的に熱量が小さいので、ヘッド上面2bがホルダ3に当接していてもホルダ3への熱の伝搬量は装置に悪影響を与える程度にはならない。
【0017】
図3は、本発明の別実施形態を示し、同図に示すようにヒータ10はヘッド1の摺動面4とホルダー3の間にベアリング5を介在させたものであり、望ましくない位置ずれを防止したり、断熱の効果がある。
【0018】
また、ヘッド1の摺動面4に凹凸面を形成することにより断熱効果を得ることができる他、摺動部分に窒化硼素等の摺動性粉末を塗布することにより摺動性を高めることができる。
【0019】
上記高熱伝導セラミックとしては、高熱伝導窒化珪素、窒化アルミニウム、炭化珪素等のセラミックスがある。高熱伝導窒化珪素質セラミックスは、窒化珪素(Si)を主成分とし、周期律表第3a族元素(RE)を酸化物(RE)換算で3〜5モル%、アルミニウムが酸化物換算で0.2重量%以下の組成からなり、窒化珪素結晶の平均粒径を5μm以上と大きくするとともに、粒界に周期律表第3a族元素、珪素、及び酸素を含む結晶相を形成することにより、熱伝導率を50W/m・K以上としたものでなどがある。
【0020】
なお、窒化アルミニウム質セラミックスは、窒化アルミニウム(AlN)を主成分とし、焼結助剤として希土類元素酸化物等を含有するものである。さらに炭化珪素質セラミックスは、炭化珪素(SiC)を主成分とし、B、C又はAl、Y等の焼結助剤を含有するものである。
これに対して、上記低熱伝導セラミックとしては、低熱伝導窒化珪素、アルミナ、ジルコニア等を用いることができ、その他さまざまなセラミックスを用いることができる。
【0021】
低熱伝導窒化珪素質セラミックスは、窒化珪素(Si)を主成分とし、Al、Y等を焼結助剤として含有するものである。またアルミナセラミックスは、Alを主成分とし、SiO、MgO、CaO等を焼結助剤として含有するものである。さらにジルコニアセラミックスは、ZrOを主成分とし、Y、MgO、CaO、CeO等を安定化剤として含有するものなどがある。
【0022】
また、ヘッド上面2bと、ホルダ3側の該上面2bとの当接面3cとの間の前記隙間sの高さh1は2〜6mmの範囲内であることが好ましい。この高さh1が2mmより小さい場合には、ヘッド1の上面2bからの放射熱がホルダー3に多く伝搬する恐れがあり、他方、6mmより大きいとホルダー3の下端部の強度が不十分となる恐れがある。
【0023】
さらに、ヘッド1の摺動面4の高さh2としては2〜6mmの範囲内であることが好ましい。この高さh2が2mm以下の場合、ヘッド1が傾きホルダー3の凹部内で引っ掛かってしまう恐れがあり、他方、6mmより大きいとヘッド1の体積が大きく加熱効率が悪くなる傾向があるためである。
【0024】
実施例
上記隙間sの高さh1、ヘッド1の摺動面4の高さh2ともに5mmとして図1に示すヒーター10を作製した。
【0025】
なお、ヒーター10を構成するセラミック材としては京セラ■製の窒化ケイ素材種をそれぞれ用い、伝熱体1aにSN281材種、発熱体にSN362材種、そしてホルダー3にSN220材種で用いた。このうち、SN281およびSN362材種は前記高熱伝導セラミックに該当し、残るSN220材種は前記低熱伝導セラミックに該当するものである。
【0026】
このヒータ10を装置本体に実装し、図1のようにヘッド1が降りた状態で電力(1000W,1500W,2000W)を投入し、立ち上がり時間とヘッド1の先端中央部位での温度とを測定した。その結果を図4に示す。
【0027】
また、図2のようにヘッド1が昇った状態で同様に立ち上がり時間とヘッド1の先端中央部位での温度とを測定した。その結果を図5に示す。
【0028】
図4及び図5から明らかなように、図1のようにヘッド1が降りた状態での加熱効率が図2のようにヘッド1が昇った状態よりも顕著に良かった。これは、図1の状態ではヘッド1からホルダ3への熱伝搬が少なかったことを意味するものであり、本発明のヒーター10はこの状態で電力投入することから、本発明の有効性を確認できるものである。
【0029】
【発明の効果】
叙上のように、本発明によれば被加熱物を接触加熱するためのセラミックス製のヘッドを装置本体のホルダに対して出入自在とし、ヘッドを加温する際にはヘッド上面とホルダとの間に隙間が生じるとともに被加熱物を押圧し接触加熱する際には上記ヘッドの上面とホルダが当接するるようにヒーターを構成したので、上記ヘッドを加温する際にヘッドが狭い領域でのみホルダーと当接し、これによりホルダーへの放熱が最小限に抑えられるので加温時間が大きく短縮され、他方、半導体チップを押圧する間、ヘッドの上面がホルダに当接し、ホルダがヘッドを上からしっかりと抑えつけるのでヘッドの平行度を正確に保つことができ、さらに、押圧状態で冷却する際には、ヘッド上面がホルダに当接した状態、すなわち広い領域で当接するので、ヘッドの熱が適量ホルダに伝搬し、その作用により冷却に必要な時間も短い。
【0030】
したがって、加温時間および冷却時間が短縮され且つヘッドの平行度も良好に維持されるのでるので生産効率を大幅に向上が可能となった。
【図面の簡単な説明】
【図1】本発明のヒーターの端面図である。
【図2】図1のヒーターの端面図であり、ヘッドが被加熱物に接触している状態を示す。
【図3】本発明別実施形態によるヒーターを示す部分拡大図である。
【図4】図1のヒーターによる実施例において、図1の状態で電力を投入した際の、立ち上がり時間とヘッドの先端中央部位での温度とを示すグラフである。
【図5】図1のヒーターによる実施例において、図2の状態で電力を投入した際の、立ち上がり時間とヘッドの先端中央部位での温度とを示すグラフである。
【図6】フリップチップ接続法におけるヒーターの使用法を概略説明する説明図である。
【図7】従来のヒーターの端面図である。
【符号の説明】
s 隙間
h1,h2 高さ
1 ヘッド
1a 伝熱部
2 発熱部
2a 発熱体
2b ヘッド上面
3 ホルダー
3b 凹部
3c 当接面
4 摺動面
5 ベアリング
10 ヒーター
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a heater configured to contact and heat an object to be heated, such as a bonding heater head used for directly bonding a semiconductor bare chip onto a substrate.
[0002]
[Prior art]
As a method of directly bonding a semiconductor bare chip onto a substrate, an ACF connection method using a resin-based adhesive such as an anisotropic conductive film (ACF), or Au-Si, Au-Sn, or the like used for a multi-chip module is used. A flip chip connection method using a low melting point brazing such as Pb-Sn has been performed.
[0003]
For example, in the flip-chip connection method, as shown in FIG. 6, a semiconductor chip 21 is placed on a substrate 20 of a multilayer package, and the semiconductor chip 21 is pressed while being heated by the head 11 of the bonding heater 10 from the upper surface. Is going. At this time, bonding and wiring can be performed by the solder bumps 22 provided on both.
[0004]
As such a bonding heater 10, a heater using an aluminum nitride ceramic having high thermal conductivity has been used. In this method, the bonding heater 10 shown in FIG. 6 is formed in a rectangular body made of aluminum nitride ceramics, and the front end of the bonding heater 10 is used as the head 11 to be in contact with the semiconductor chip 21, and the rear end of the holder 13 is connected to another member. A heating element (not shown) such as Ag-Pd or Pt-Pd is printed or baked on the side surface or inside by a thick-film printing technique, and then covered with a cover glass paste or the like (thick-film ceramic head). ). As a characteristic required of such a bonding heater 10, first, it is necessary to efficiently transmit heat for softening or melting the adhesive to be used to the adhesive via the semiconductor chip 21.
[0005]
From the viewpoint of production efficiency, it is also important that the time required to raise the temperature to the required temperature is short and that the time required for the adhesive to solidify after bonding is short. Further, when joining the semiconductor chips 21, pressure is applied simultaneously with heat, so that the head 11 of the bonding heater 10 is required to have mechanical strength, wear resistance, or toughness. However, in the case of the above-mentioned thick film type ceramic head, since aluminum nitride ceramics having good thermal conductivity is used, heat of the heating element easily escapes to the holder 13 side, and the heating efficiency of the head 11 side is poor. there were. Furthermore, because of the thick film type, the adhesion between the heating element and the ceramics is poor, and there is a difference in thermal expansion, so that the heating element peels off from the ceramics during repeated thermal cycles of heating and cooling, and frequently breaks. And the like. Further, there is also a problem that the aluminum nitride ceramics constituting the head 11 is easily chipped due to low toughness.
[0006]
Therefore, in recent years, as shown in FIG. 7, the head 1 is formed by forming the holder 3 from a low heat conductive ceramic and joining a heat transfer portion 1a made of a high heat conductive ceramic to a heat generating portion 2 having a heat generating element 2a provided therein. A bonding heater 10 was developed in which the head 1 was fixed to the holder 3 so that the recess 3b was formed. When the bonding heater 10 is used, in a state where the heating element 2a is energized and heated, the head 1 is pressed against the semiconductor chip while the heat transfer section 1a is being heated, and is joined to the substrate by solder bumps. In this heater 10, the heat generating portion 2 and the holder 3 are made of ceramic, and are intended to improve the heating efficiency.
[0007]
[Problems to be solved by the invention]
By the way, the above-mentioned prior art was very effective, but there were difficulties in production efficiency, and there were the following problems when trying to further shorten the heating time to the required temperature. Was.
[0008]
That is, although it is devised that heat is not easily dissipated by heat transfer, it takes a long time to start up because the contact area between the head and the holder is large. Therefore, when a large amount of heat is applied to the head in an attempt to forcibly speed up the operation, a large amount of heat is transmitted to the holder and transmitted to the apparatus main body via the holder. Therefore, the main body of the device is deformed due to thermal expansion, and the parallelism of the head with respect to the chip is deviated, which may affect the final product.
[0009]
[Means for Solving the Problems]
Therefore, the present invention provides a ceramic head for transmitting the heat of the heating element to and from the holder so that the upper surface of the head comes into contact with the holder when pressing and heating the object to be heated. And a contact heating heater having a head mounted on a holder.
[0010]
[Action]
According to the present invention as described above, the head made of ceramics can be moved in and out of the holder, so that when the head is heated, the head is put out so that the top surface of the head is not in contact with the holder. As a result, the head comes into contact with the holder only in a narrow area of the edge of the side surface and the lower surface, and thus the heat radiation to the holder is minimized, so that the heating time is greatly reduced.
[0011]
Also, while the semiconductor chip is pressed and heated by contact, the upper surface of the head comes into contact with the holder, and the holder firmly holds the head from above, so that the parallelism of the head can be accurately maintained, and furthermore, the cooling in the pressed state In this case, since the upper surface of the head is in contact with the holder, that is, in contact with a wide area, the heat of the head is transmitted to the holder in an appropriate amount, and the time required for cooling is short due to its action. Since the amount of heat during cooling is relatively smaller than that during heating, even if the upper surface of the head is in contact with the holder, the amount of heat transmitted to the holder is not so great as to adversely affect the apparatus.
[0012]
As described above, it is possible to prevent a large amount of heat from the heater from being transmitted to the apparatus main body, thereby improving the heating efficiency, thereby greatly improving the production efficiency.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings by taking a bonding heater as an example.
[0014]
FIG. 1 shows an end view of a bonding heater (hereinafter abbreviated as a heater) 10 of the present invention. In the heater 10, a concave portion 3b is formed in a holder 3 made of low thermal conductive ceramics, and a heating element 2a is embedded. A head 1 in which a heat transfer portion 1a made of a high thermal conductive ceramic is joined to a heat generating portion 2 made of ceramic and fitted and held in a concave portion 3b of the holder 3. The head 1 is movable in and out of the holder 3 (in FIG. 1, it can be said that the head 1 can be moved up and down), and the head upper surface 2b and the upper surface 2b on the holder 3 side move with the movement of the head 1. A gap s is generated between the contact surface 3c and the contact surface 3c.
[0015]
By the way, to explain how to use the heater 10, when the head upper surface 2b and the contact surface 3c of the holder 3 are sufficiently separated as shown in FIG. Then, as shown in FIG. 2, the contact surface 1 a at the tip of the head 1 is pressed against the semiconductor chip 21, heated by contact, and joined to the substrate 20 by the solder bump 22. At this time, the head 1 moves backward until the upper surface 2b of the head 1 and the contact surface 3c of the holder 3 of the apparatus main body come into contact with each other, and the holder 3 firmly presses the head 1 from above. You will not lose. In this state, the power generation and heat generation are stopped, the head 1 is cooled, and then the heater 10 is returned to the position shown in FIG. 1 to complete one cycle of the operation.
[0016]
In other words, according to the heater 10, the head 1 contacts the holder 3 only at an extremely narrow area of the sliding surface 4 (side surface) and the edge of the lower surface when power is supplied (at the start of energization and heat generation). Is made of low thermal conductive ceramics, so that heat is not easily transmitted to the holder 3. In addition, since the head 1 is made of high thermal conductive ceramics, the temperature can be rapidly raised, and the heat from the heat generating portion 2a can be satisfactorily transmitted from the tip of the head 1 to the contact object. Since the head 1 and the holder 3 are made of ceramics, they have excellent wear resistance and can be used for a long time without being worn or deformed. Furthermore, while the semiconductor chip is pressed, the upper surface 2b of the head 1 comes into contact with the holder 3, and the holder 3 firmly holds down the head 1 from above, so that the parallelism of the head 1 can be accurately maintained. When cooling in the pressed state, the head upper surface 2b is in contact with the holder 3, that is, in contact with a wide area, so that an appropriate amount of heat of the head 1 is transmitted to the holder 3, and the time required for cooling is reduced by the action. short. Since the amount of heat during cooling is relatively smaller than that during heating, even if the head upper surface 2b is in contact with the holder 3, the amount of heat transmitted to the holder 3 is not large enough to adversely affect the apparatus.
[0017]
FIG. 3 shows another embodiment of the present invention. As shown in FIG. 3, the heater 10 has a bearing 5 interposed between the sliding surface 4 of the head 1 and the holder 3, so that an undesired misalignment occurs. It has the effect of preventing and insulating.
[0018]
In addition, by forming an uneven surface on the sliding surface 4 of the head 1, a heat insulating effect can be obtained. In addition, by applying a sliding powder such as boron nitride to the sliding portion, the sliding property can be improved. it can.
[0019]
Examples of the high heat conductive ceramic include ceramics such as high heat conductive silicon nitride, aluminum nitride, and silicon carbide. The high thermal conductive silicon nitride-based ceramic has silicon nitride (Si 3 N 4 ) as a main component, a 3a group element (RE) in the periodic table in an oxide (RE 2 O 3 ) conversion of 3 to 5 mol%, and aluminum. It has a composition of not more than 0.2% by weight in terms of oxide, and has an average particle size of silicon nitride crystal as large as 5 μm or more, and a crystal phase containing a Group 3a element of the periodic table, silicon, and oxygen at a grain boundary. For example, there is one having a thermal conductivity of 50 W / m · K or more by being formed.
[0020]
The aluminum nitride-based ceramic has aluminum nitride (AlN) as a main component and a rare earth element oxide or the like as a sintering aid. Further, the silicon carbide ceramic contains silicon carbide (SiC) as a main component and contains sintering aids such as B, C or Al 2 O 3 or Y 2 O 3 .
On the other hand, as the low thermal conductive ceramic, low thermal conductive silicon nitride, alumina, zirconia and the like can be used, and various other ceramics can be used.
[0021]
The low thermal conductive silicon nitride ceramics have silicon nitride (Si 3 N 4 ) as a main component and Al 2 O 3 , Y 2 O 3 and the like as a sintering aid. Alumina ceramics have Al 2 O 3 as a main component and SiO 2 , MgO, CaO, etc. as a sintering aid. Further, some zirconia ceramics contain ZrO 2 as a main component and contain Y 2 O 3 , MgO, CaO, CeO 2 or the like as a stabilizer.
[0022]
The height h1 of the gap s between the head upper surface 2b and the contact surface 3c of the holder 3 with the upper surface 2b is preferably in the range of 2 to 6 mm. If the height h1 is smaller than 2 mm, a large amount of radiant heat from the upper surface 2b of the head 1 may be transmitted to the holder 3. On the other hand, if the height h1 is larger than 6 mm, the strength of the lower end of the holder 3 becomes insufficient. There is fear.
[0023]
Further, the height h2 of the sliding surface 4 of the head 1 is preferably in the range of 2 to 6 mm. If the height h2 is 2 mm or less, the head 1 may be caught in the concave portion of the tilt holder 3, while if it is larger than 6 mm, the volume of the head 1 is large and the heating efficiency tends to be deteriorated. .
[0024]
Example The heater 10 shown in FIG. 1 was manufactured by setting the height h1 of the gap s and the height h2 of the sliding surface 4 of the head 1 to 5 mm.
[0025]
The ceramic material of the heater 10 was made of a silicon nitride material manufactured by Kyocera Corporation. The heat transfer member 1a was made of SN281 material, the heating member was made of SN362 material, and the holder 3 was made of SN220 material. Among them, the SN281 and SN362 grades correspond to the high thermal conductive ceramics, and the remaining SN220 grades correspond to the low thermal conductive ceramics.
[0026]
The heater 10 was mounted on the main body of the apparatus, and electric power (1000 W, 1500 W, 2000 W) was applied while the head 1 was lowered as shown in FIG. . The result is shown in FIG.
[0027]
Further, the rising time and the temperature at the central portion of the tip of the head 1 were similarly measured in a state where the head 1 was raised as shown in FIG. The result is shown in FIG.
[0028]
As is clear from FIGS. 4 and 5, the heating efficiency when the head 1 is lowered as shown in FIG. 1 is remarkably better than that when the head 1 is raised as shown in FIG. This means that the heat transmission from the head 1 to the holder 3 was small in the state of FIG. 1, and the heater 10 of the present invention was powered on in this state, thus confirming the effectiveness of the present invention. You can do it.
[0029]
【The invention's effect】
As described above, according to the present invention, a ceramic head for contact heating of an object to be heated is made freely movable in and out of a holder of the apparatus main body, and when the head is heated, the head upper surface and the holder are connected. A heater is configured so that the upper surface of the head comes into contact with the holder when contacting and heating the object to be heated by pressing the object to be heated, so that the head is heated only in a narrow area when heating the head. Heating time is greatly shortened by contacting with the holder and thereby minimizing heat radiation to the holder. Since the head is firmly held down, the parallelism of the head can be maintained accurately, and when cooling in a pressed state, the top surface of the head is in contact with the holder, that is, in a wide area In the head of the heat is propagated in an appropriate amount holder, the time required for cooling due to its action short.
[0030]
Therefore, the heating time and the cooling time are shortened and the parallelism of the head is maintained well, so that the production efficiency can be greatly improved.
[Brief description of the drawings]
FIG. 1 is an end view of a heater according to the present invention.
FIG. 2 is an end view of the heater of FIG. 1, showing a state in which a head is in contact with an object to be heated.
FIG. 3 is a partially enlarged view showing a heater according to another embodiment of the present invention.
4 is a graph showing a rise time and a temperature at a central portion of a tip end of a head when power is supplied in the state of FIG. 1 in the embodiment using the heater of FIG. 1;
5 is a graph showing a rise time and a temperature at a central portion of a head tip when power is supplied in the state of FIG. 2 in the embodiment using the heater of FIG. 1;
FIG. 6 is an explanatory view schematically illustrating how to use a heater in a flip chip connection method.
FIG. 7 is an end view of a conventional heater.
[Explanation of symbols]
s Gap h1, h2 Height 1 Head 1a Heat transfer section 2 Heating section 2a Heating element 2b Head upper surface 3 Holder 3b Recess 3c Contact surface 4 Sliding surface 5 Bearing 10 Heater

Claims (1)

被加熱物を接触加熱するべくホルダの先端部にセラミックス製のヘッドを備えてなり、該ヘッドは上記ホルダに対して出入自在で、且つ被加熱物を押圧し接触加熱する際に、上記ヘッドの上面とホルダが当接するように構成したことを特徴とする接触加熱用ヒータ。A ceramic head is provided at the tip of the holder to contactly heat the object to be heated, and the head is freely movable in and out of the holder, and when the object to be heated is pressed by contact heating, the head is heated. A heater for contact heating, wherein the upper surface and the holder are configured to contact each other.
JP04678997A 1997-02-28 1997-02-28 Contact heating heater Expired - Lifetime JP3590231B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04678997A JP3590231B2 (en) 1997-02-28 1997-02-28 Contact heating heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04678997A JP3590231B2 (en) 1997-02-28 1997-02-28 Contact heating heater

Publications (2)

Publication Number Publication Date
JPH10247580A JPH10247580A (en) 1998-09-14
JP3590231B2 true JP3590231B2 (en) 2004-11-17

Family

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JP04678997A Expired - Lifetime JP3590231B2 (en) 1997-02-28 1997-02-28 Contact heating heater

Country Status (1)

Country Link
JP (1) JP3590231B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4252666B2 (en) * 1999-04-27 2009-04-08 パナソニック株式会社 Electronic component joining method and apparatus using the same

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