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JP3595433B2 - Plasma dry cleaner - Google Patents
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JP3595433B2 - Plasma dry cleaner - Google Patents

Plasma dry cleaner Download PDF

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Publication number
JP3595433B2
JP3595433B2 JP15047197A JP15047197A JP3595433B2 JP 3595433 B2 JP3595433 B2 JP 3595433B2 JP 15047197 A JP15047197 A JP 15047197A JP 15047197 A JP15047197 A JP 15047197A JP 3595433 B2 JP3595433 B2 JP 3595433B2
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Prior art keywords
tray
reaction chamber
dry cleaner
plasma dry
cleaning
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JP15047197A
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JPH10324981A5 (en
JPH10324981A (en
Inventor
利明 立田
巳喜夫 澤井
理 辻
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株式会社サムコインターナショナル研究所
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Description

【0001】
【発明の属する技術分野】
本発明は、プラズマにより半導体等を実装する基板上の各部表面を清浄化するプラズマドライクリーナーに関する。
【0002】
【従来の技術】
従来、半導体やレンズ等の表面はフロン等の液体で洗浄されていた。しかし、フロンは環境破壊の原因となることからその製造及び使用が中止されるようになり、代わりに用いられるようになった各種有機溶剤も、可燃性であることや蒸発ガスの毒性の点で取り扱いが難しいという問題がある。そこで、プラズマにより表面を清浄化するドライクリーニング装置が近年注目されている。
【0003】
従来のプラズマドライエッチング装置は反応室が円筒状となっており、その外部に一対の半円筒状の電極を反応室の外壁に沿って配置し、反応室の内部に被洗浄物を載置したトレイを装入するようになっていた。反応室内に反応ガス(洗浄ガス)を導入し、両外部電極の間に高周波電力を投入することによりプラズマを生成して、被洗浄物の表面の汚れを主にプラズマ中のラジカル等の中性粒子の衝突及び反応によって化学的に除去するようになっていた。
【0004】
【発明が解決しようとする課題】
このような従来の装置では、まず反応室内のスペース効率が悪く、装置全体が大きい割には少ない量の被洗浄物しか洗浄することができないという欠点があった。また、両電極が外部にあるため、プラズマ中のイオンを積極的に利用することができず、無機質系の汚れに対する洗浄効果が期待できなかった。
【0005】
本発明はこのような課題を解決するために成されたものであり、その目的とするところは、スペース効率が良く、大量の被洗浄物を一度に洗浄することができるとともに、有機・無機を問わず、あらゆる種類の汚れを効率よく洗浄でき、しかも、被洗浄物のセットを容易に且つ短時間で行なうことのできるプラズマドライクリーナーを提供することにある。
【0006】
【課題を解決するための手段】
上記課題を解決するために成された本発明に係るプラズマドライクリーナーは、
a)直方体形状を有し、気密に閉塞可能な反応室と、
b)反応室の内壁面に設けられた、複数のトレイを反応室内に装入するためのスライドレールと、
c)トレイに設けられたトレイ側端子と反応室に設けられた反応室側端子とから成り、トレイが反応室内に装入されると両者が接触して反応室とトレイとを電気的に接続する電気接続手段と、
を備えることを特徴とするものである。
【0007】
【発明の実施の形態】
本プラズマドライクリーナーでは、反応室内に装入されるトレイに電極が埋設されている、或いはトレイ自身が電極となる。トレイは、反応室の内壁面に設けられたスライドレールに沿って押し込むことにより反応室内に装入され、装入された状態でトレイ側端子と反応室側端子とが接触して反応室とトレイとが電気的に接続される。この接触は、後述の実施例で示すようにトレイを装入することにより自動的に接触するようにしておいてもよいし、トレイを装入した後、例えばそのトレイの手前側に設けたフックを回転させてトレイを固定するという操作により接触が形成されるというように、簡単な操作を伴うものであってもよい。
【0008】
上記の通り、トレイには電極が埋め込まれ、又はトレイ自身が電極となる。従って、反応室内に反応ガスを導入した後、(1)トレイと反応室の内壁との間、又は、(2)トレイと隣接するトレイとの間、に高周波電圧を印加することにより、両者間にプラズマが生成され、トレイ上に載置した被洗浄物が洗浄される。そして、後述のような各種構造のトレイを用いることにより、多様な方法で洗浄を行なうことができるようになる。
【0009】
(2)の態様で使用する場合、接地側トレイと高周波側トレイの2種類のトレイを用意する必要がある。このとき、接地側トレイの電気接続手段と高周波側トレイの電気接続手段を別異の箇所に設け、違った種類の電気接続手段とは接触しないようにしておくことが望ましい。これにより、装入前又は装入時にトレイの種類を確認して正しい電気接続を行なうようにするという面倒な操作が不要となり、使用者の負担が軽減されるとともに、電気事故が防止できる。
【0010】
【実施例】
本発明の一実施例であるプラズマドライクリーナーを図1〜図5により説明する。図1に示すように、本実施例のプラズマドライクリーナー10は直方体形状を有する反応室11と、それと同一の筐体内に設けられた制御部12とから成る。反応室11の内壁の両側面には後述のトレイ20を挿入するためのレール13が複数段設けられており、内壁の後面には4列のブスバー14、15が設けられている。4列のブスバー14、15は中央側の2列が高周波側14、外側の2列が接地側15となっており、各ブスバー14、15にはレール13の高さに合わせた位置にトレイ側端子を挿入するための挿入口141、151(図2)が設けられている。各挿入口141、151の中には、後述のトレイ側端子が挿入されたときに接触を確実にするため、弾性保持手段が設けられている。
【0011】
制御部12には、高周波側端子にプラズマ発生用高周波電力(通常、13.56MHz)を供給するための高周波ユニットや、本クリーナー全体の動作を制御するための制御回路が納められている。
【0012】
反応室11内に納めるトレイ20には、構造及び機能の異なる複数の種類が備えられている。まず、使用される電極の極性により、高周波側トレイ21と接地側トレイ22の2種類に分けられる。図2(a)(b)に示すように、両者は全体の大きさが同じであり、双方とも反応室11のいずれの段のレール13にも区別なく差し込むことができるが、後方の辺に設けられた端子24、25の突出位置が異なる。すなわち、高周波側トレイ21の端子24は高周波側ブスバー14の挿入口141に適合するように中央寄りに設けられており、接地側トレイ22の端子25は接地側ブスバー15の挿入口151に適合するように外側寄りに設けられている。従って、高周波側トレイ21を反応室11のレール13に沿って押し込んだとき、トレイ21の端子24は必ず高周波側ブスバー14の挿入口141に入り、決して接地側ブスバー15の挿入口151に入ることはない。逆に、接地側トレイ22を装入したときは、その端子25は必ず接地側ブスバー15の挿入口151に入り、決して高周波側ブスバー14の挿入口141に入ることはない。
【0013】
反応室11の筐体は接地されているため、高周波側トレイ21は、レール13に接触するフレーム211と、絶縁部材212を介してフレーム211の内部に固定された被洗浄物載置板213から成る(図2(a))。この被洗浄物載置板213がプラズマ生成のための高周波側電極となるものであり、高周波側ブスバー14に挿入されるトレイ端子24はこの被洗浄物載置板213から後方に突出している。なお、接地側トレイ22は電気的に浮遊させる必要はなく、電気的に一体の金属体で構成することができる(図2(b))。
【0014】
トレイは、形状面からは、単純な平板状のトレイ、グリッド状のトレイ、そして中央に開口を有する開口トレイに分けられる。
【0015】
これら各種トレイを適宜組み合わせることにより、多様な種類の物品を次のように各種モードで洗浄することができる。
【0016】
(PEモード)
図3の上2段に示すように、高周波側トレイ31を上に、接地側トレイ32を下に装入し、下側の接地側トレイ32の上に被洗浄物33を載置する。この状態で反応室11を密閉し、空気を十分排出した後に反応ガスを反応室11に入れて高周波側トレイ31に高周波電力(RF)を投入すると、高周波側トレイ31と接地側トレイ32の間に放電が生じ、反応ガスのプラズマ(正イオン及び電子)とラジカルが生成する。ここで、イオンと電子の易動度の違いにより、高周波側電極(高周波側トレイ31)の方が相対的に負に帯電する(自己バイアス)。このため、正電荷を有するイオンの多くが高周波側トレイ31の方に引き寄せられ、接地側トレイ32上に載置された被洗浄物33には主にラジカルが照射されるようになる。このプラズマエッチング(PE)モードは、イオンによる強力なエッチング作用が有害となる洗浄、例えば蒸着薄膜が未だ表面に存在する半導体基板等の洗浄に適している。
【0017】
なお、反応室における反応ガスの圧力は洗浄の目的や被洗浄物に依存するが、およそ数Torr〜10−2Torr程度とする。
【0018】
(リモートモード)
被洗浄物が更にイオン照射を嫌う場合には、図3の下3段に示すように、上側の高周波側トレイ34と下側の被洗浄物33を載置した接地側トレイ36との間に接地側のグリッド状トレイ35を挿入する。これにより、下側の接地側トレイ36に向かうイオンは接地側グリッド状トレイ35に捕捉され、被洗浄物33にはラジカルのみが照射される。このモードは、例えばMOS半導体の絶縁層を洗浄する場合等、電荷の蓄積が有害となる場合の洗浄に適している。
【0019】
(RIEモード)
図3中央に示すように、接地側トレイ32を上に、高周波側トレイ34を下に装入し、下側の高周波側トレイ34の上に被洗浄物33を載置すると、反応性イオンエッチング(RIE)モードとなる。この配置では上記の通り、自己バイアスにより高周波側トレイ34が負に帯電することにより、反応ガスのイオンが高周波側トレイ34上の被洗浄物33に強力に照射される。このとき、プラズマ中のラジカルも化学的反応の進行を負う。従ってこのRIEモードは、ゴミや錆の付着をイオン照射の物理的衝撃により除去するという洗浄目的に適している。
【0020】
(両面洗浄モード)
図4(b)に示すように、上下に接地側トレイ41、43を配置し、その間に高周波側とした開口トレイ42を挿入して、その開口部421に金属ベースの被洗浄物422を載置する。すると、被洗浄物422は両面からプラズマイオンの照射を受け、一度に両面の洗浄が行なわれる。例えばハードディスクドライブ用シークヘッドは、ステンレスの薄いシートをベースとし、その両面にポリイミドフィルムを介して電極層が形成される構造を有している。このような物品については、本発明に係るプラズマドライクリーナーを用いることにより一挙に両面の洗浄を行なうことができる。
【0021】
なお、上下のトレイを高周波側(RF)とし、間に介挿する開口トレイを接地側(GD)としてもよい。また、上下のトレイと開口トレイの間にグリッド状トレイを挿入して、上記リモートモードと両面洗浄モードとを組み合わせて行なってもよい。
【0022】
(マガジン使用モード)
リードフレーム等の小物部品について蒸着、洗浄等の一連の処理を行なう場合、1個1個行なっていたのでは非常に効率が悪い。そこで、多数の小物部品51を棚状に収容するマガジン52と呼ばれる容器を用い、このマガジン52に収容したままの状態で多数の小物部品51を一括して各種の処理を行なうようになっている。本発明に係るプラズマドライクリーナーは、このようなマガジン52をトレイ54に載置し、その上部に逆極性のトレイ53を配置して(或いは、反応室の天井自体を接地極として用いてもよい)、上記PEモード又はRIEモードで洗浄を行なうことができる。
【0023】
以上説明した各種モードは従来それぞれ単独で行なわれていたが、本発明に係るプラズマドライクリーナーではトレイを適宜配置することによりこれらを同時に行なうことができる。すなわち、多種類の被洗浄物の洗浄を短時間で行なうことができる。
【0024】
【発明の効果】
本発明に係るプラズマドライクリーナーでは、被洗浄物を載置するためのトレイを兼ねた電極を反応室内に複数枚装入することができるため、多数の被洗浄物を同時に洗浄することができ、従来の洗浄装置と比較して単位時間当たりの処理数が大幅に増加する。また、反応室が直方体であるため、平板状のトレイを用いることにより比較的広い範囲で均一なプラズマ分布が得られ、多くの被洗浄物に対して均等な洗浄を行なうことができる。
【0025】
次に、接地側トレイの電気接続手段と高周波側トレイの電気接続手段を別異の箇所に設け、違った種類の電気接続手段とは接触しないようにしておくことにより、トレイ装入時の面倒な電極確認、接続操作が不要となり、使用者の負担が軽減されるとともに、電気事故が防止できる。
【0026】
更に、反応室内におけるトレイの極性接続を各種変更することにより、主としてイオンにより洗浄する方法、主としてラジカルにより洗浄する方法等、目的に応じて様々な方法で洗浄することができるようになる。また、それに加えて各種構造のトレイを用意することにより、平面状導電性被洗浄物の両面からの洗浄や小物部品の大量一括洗浄等、更に多様な方法で洗浄を行なうことができるようになる。
【図面の簡単な説明】
【図1】本発明の一実施例であるプラズマドライクリーナーの一部断面斜視図。
【図2】高周波側トレイ(a)及び接地側トレイ(b)とブスバーの関係を示す斜視図。
【図3】各種トレイの配置と洗浄モードの関係を示す説明図。
【図4】開口トレイの斜視図(a)と使用時の反応室の断面図(b)。
【図5】マガジン使用モードにおける反応室の断面図。
【符号の説明】
10…プラズマドライクリーナー
11…反応室
12…制御部
13…スライドレール
14…高周波側ブスバー 141…端子挿入口
15…接地側ブスバー 151…端子挿入口
20、31、32、34、36、41、53、54…トレイ
21…高周波側トレイ 211…フレーム
212…絶縁部材
213…被洗浄物載置板
22…接地側トレイ
24、25…端子
35…グリッド状トレイ
42…開口トレイ 421…開口部
422…被洗浄物
51…小物部品
52…マガジン
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plasma dry cleaner for cleaning the surface of each part on a substrate on which a semiconductor or the like is mounted by using plasma.
[0002]
[Prior art]
Conventionally, the surfaces of semiconductors and lenses have been cleaned with a liquid such as Freon. However, since CFCs cause environmental destruction, their production and use have been discontinued, and various organic solvents that have been used instead are also flammable and toxic to evaporative gases. There is a problem that handling is difficult. Therefore, a dry cleaning apparatus that cleans the surface with plasma has attracted attention in recent years.
[0003]
In a conventional plasma dry etching apparatus, a reaction chamber is cylindrical, and a pair of semi-cylindrical electrodes are arranged outside the reaction chamber along an outer wall of the reaction chamber, and an object to be cleaned is placed inside the reaction chamber. The tray was to be loaded. A reaction gas (cleaning gas) is introduced into the reaction chamber, and high-frequency power is applied between the two external electrodes to generate plasma. The particles were chemically removed by collision and reaction.
[0004]
[Problems to be solved by the invention]
Such a conventional apparatus has a drawback that the space efficiency in the reaction chamber is poor, and only a small amount of the object to be cleaned can be cleaned in spite of the large size of the entire apparatus. In addition, since both electrodes are outside, the ions in the plasma cannot be positively used, and a cleaning effect on inorganic contamination cannot be expected.
[0005]
The present invention has been made in order to solve such a problem, and an object of the present invention is to be able to wash a large amount of objects to be washed at a time with good space efficiency and to reduce organic and inorganic substances. Regardless, it is an object of the present invention to provide a plasma dry cleaner that can efficiently clean all kinds of stains and can easily set an object to be cleaned in a short time.
[0006]
[Means for Solving the Problems]
The plasma dry cleaner according to the present invention made to solve the above-mentioned problem,
a) a reaction chamber having a rectangular parallelepiped shape, which can be hermetically closed;
b) a slide rail provided on the inner wall surface of the reaction chamber for loading a plurality of trays into the reaction chamber;
c) It is composed of a tray side terminal provided on the tray and a reaction chamber side terminal provided in the reaction chamber, and when the tray is inserted into the reaction chamber, they come into contact with each other to electrically connect the reaction chamber and the tray. Electrical connection means;
It is characterized by having.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
In the present plasma dry cleaner, an electrode is buried in a tray inserted into the reaction chamber, or the tray itself becomes an electrode. The tray is inserted into the reaction chamber by being pushed along a slide rail provided on the inner wall surface of the reaction chamber, and the terminal on the tray side contacts the terminal on the reaction chamber side in the loaded state, so that the reaction chamber and the tray are contacted. Are electrically connected. This contact may be made to automatically contact by loading a tray as shown in an embodiment to be described later, or after loading the tray, for example, a hook provided on the near side of the tray A simple operation may be performed such that a contact is formed by an operation of rotating the to fix the tray.
[0008]
As described above, an electrode is embedded in the tray, or the tray itself becomes an electrode. Therefore, after the reaction gas is introduced into the reaction chamber, a high-frequency voltage is applied between (1) the tray and the inner wall of the reaction chamber, or (2) between the tray and the adjacent tray, so that the reaction gas is applied between the two. Is generated, and the object to be cleaned placed on the tray is cleaned. By using trays having various structures as described later, it is possible to perform cleaning by various methods.
[0009]
When used in the mode (2), it is necessary to prepare two types of trays, a ground side tray and a high frequency side tray. At this time, it is desirable that the electrical connection means of the ground side tray and the electrical connection means of the high frequency side tray are provided at different places so as not to contact with different types of electrical connection means. This eliminates the need for a troublesome operation of confirming the type of the tray before or at the time of loading and performing correct electrical connection, thereby reducing the burden on the user and preventing an electrical accident.
[0010]
【Example】
A plasma dry cleaner according to an embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 1, a plasma dry cleaner 10 according to the present embodiment includes a reaction chamber 11 having a rectangular parallelepiped shape, and a control unit 12 provided in the same housing as the reaction chamber. On both sides of the inner wall of the reaction chamber 11, there are provided a plurality of rails 13 for inserting a tray 20 to be described later, and four rows of bus bars 14 and 15 are provided on the rear surface of the inner wall. The four rows of busbars 14 and 15 have the high frequency side 14 in the center two rows and the grounding side 15 in the outer two rows, and each of the busbars 14 and 15 has a tray side at a position corresponding to the height of the rail 13. Insertion ports 141 and 151 (FIG. 2) for inserting terminals are provided. An elastic holding means is provided in each of the insertion openings 141 and 151 to ensure contact when a later-described tray-side terminal is inserted.
[0011]
The control unit 12 includes a high-frequency unit for supplying high-frequency power for plasma generation (generally 13.56 MHz) to the high-frequency side terminal and a control circuit for controlling the operation of the entire cleaner.
[0012]
The tray 20 accommodated in the reaction chamber 11 is provided with a plurality of types having different structures and functions. First, there are two types, a high frequency side tray 21 and a ground side tray 22, depending on the polarity of the electrodes used. As shown in FIGS. 2 (a) and 2 (b), both have the same overall size, and both can be inserted into the rails 13 of any stage of the reaction chamber 11 without distinction. The projected positions of the provided terminals 24 and 25 are different. That is, the terminal 24 of the high frequency side tray 21 is provided near the center so as to fit the insertion port 141 of the high frequency side bus bar 14, and the terminal 25 of the ground side tray 22 fits the insertion port 151 of the ground side bus bar 15. As shown in FIG. Therefore, when the high frequency side tray 21 is pushed along the rail 13 of the reaction chamber 11, the terminal 24 of the tray 21 always enters the insertion port 141 of the high frequency side bus bar 14 and never enters the insertion port 151 of the ground side bus bar 15. There is no. Conversely, when the ground side tray 22 is inserted, the terminal 25 always enters the insertion port 151 of the ground side bus bar 15 and never enters the insertion port 141 of the high frequency side bus bar 14.
[0013]
Since the housing of the reaction chamber 11 is grounded, the high frequency side tray 21 is separated from the frame 211 contacting the rail 13 and the object-to-be-cleaned mounting plate 213 fixed inside the frame 211 via the insulating member 212. (FIG. 2A). The object-to-be-washed plate 213 serves as a high-frequency electrode for generating plasma, and the tray terminal 24 inserted into the high-frequency bus bar 14 protrudes rearward from the object-to-be-washed plate 213. The ground side tray 22 does not need to be electrically floated, and can be made of an electrically integrated metal body (FIG. 2B).
[0014]
Trays are divided into simple flat trays, grid-shaped trays, and open trays having an opening at the center in terms of shape.
[0015]
By appropriately combining these various trays, various types of articles can be washed in various modes as follows.
[0016]
(PE mode)
As shown in the upper two tiers of FIG. 3, the high-frequency side tray 31 is placed above and the ground side tray 32 is placed below, and the object 33 to be cleaned is placed on the lower ground side tray 32. In this state, the reaction chamber 11 is sealed, and after sufficiently exhausting air, a reaction gas is put into the reaction chamber 11 and high-frequency power (RF) is applied to the high-frequency side tray 31. Discharge occurs, and plasma (positive ions and electrons) of the reaction gas and radicals are generated. Here, the high-frequency side electrode (high-frequency side tray 31) is relatively negatively charged (self-bias) due to the difference in mobility between ions and electrons. For this reason, most of the positively charged ions are attracted toward the high frequency side tray 31, and the object 33 to be cleaned placed on the ground side tray 32 is mainly irradiated with radicals. The plasma etching (PE) mode is suitable for cleaning in which a strong etching action by ions is harmful, for example, for cleaning a semiconductor substrate or the like in which a vapor-deposited thin film still exists on the surface.
[0017]
The pressure of the reaction gas in the reaction chamber depends on the purpose of cleaning and the object to be cleaned, but is set to about several Torr to about 10-2 Torr.
[0018]
(Remote mode)
When the object to be cleaned further dislikes ion irradiation, as shown in the lower three rows of FIG. 3, between the upper high-frequency tray 34 and the ground-side tray 36 on which the lower object 33 is placed. The grid-side tray 35 on the ground side is inserted. As a result, ions traveling toward the lower ground-side tray 36 are captured by the ground-side grid-shaped tray 35, and the object 33 to be cleaned is irradiated with only radicals. This mode is suitable for cleaning when accumulation of charges is harmful, for example, when cleaning the insulating layer of a MOS semiconductor.
[0019]
(RIE mode)
As shown in the center of FIG. 3, when the ground side tray 32 is placed above and the high frequency side tray 34 is placed below and the object 33 to be cleaned is placed on the lower side high frequency side tray 34, reactive ion etching is performed. (RIE) mode. In this arrangement, as described above, the high-frequency side tray 34 is negatively charged by the self-bias, so that the ions of the reactive gas are strongly irradiated onto the cleaning target 33 on the high-frequency side tray 34. At this time, radicals in the plasma also carry out a chemical reaction. Therefore, the RIE mode is suitable for the purpose of cleaning, in which dust and rust are removed by physical impact of ion irradiation.
[0020]
(Both sides cleaning mode)
As shown in FIG. 4B, ground-side trays 41 and 43 are arranged vertically, and an opening tray 42 on the high-frequency side is inserted between the trays, and a metal-based cleaning object 422 is placed in the opening 421. Place. Then, the object to be cleaned 422 is irradiated with plasma ions from both sides, and both sides are cleaned at once. For example, a seek head for a hard disk drive has a structure in which an electrode layer is formed on both surfaces of a thin stainless steel sheet via a polyimide film. Such an article can be cleaned on both sides at once by using the plasma dry cleaner according to the present invention.
[0021]
The upper and lower trays may be on the high frequency side (RF), and the opening tray interposed therebetween may be on the ground side (GD). Alternatively, a grid-like tray may be inserted between the upper and lower trays and the opening tray, and the remote mode and the double-sided cleaning mode may be combined.
[0022]
(Magazine use mode)
When a series of processes such as vapor deposition and cleaning are performed on a small component such as a lead frame, it is very inefficient if the processes are performed one by one. Therefore, a container called a magazine 52 for accommodating a large number of small parts 51 in a shelf shape is used, and various processes are collectively performed for the large number of small parts 51 while being stored in the magazine 52. . In the plasma dry cleaner according to the present invention, such a magazine 52 is placed on a tray 54, and a tray 53 of the opposite polarity is disposed above the magazine 52 (or the ceiling itself of the reaction chamber may be used as a ground electrode). ), Cleaning can be performed in the PE mode or the RIE mode.
[0023]
The above-described various modes have been conventionally performed independently, but in the plasma dry cleaner according to the present invention, these can be performed simultaneously by appropriately arranging the trays. That is, it is possible to perform cleaning of various kinds of objects to be cleaned in a short time.
[0024]
【The invention's effect】
In the plasma dry cleaner according to the present invention, since a plurality of electrodes serving also as trays for placing the objects to be cleaned can be loaded into the reaction chamber, a large number of objects to be cleaned can be simultaneously cleaned, The number of processes per unit time is greatly increased as compared with the conventional cleaning apparatus. Further, since the reaction chamber is a rectangular parallelepiped, a uniform plasma distribution can be obtained in a relatively wide range by using a flat tray, so that many objects to be cleaned can be uniformly cleaned.
[0025]
Next, the electrical connection means of the ground side tray and the electrical connection means of the high frequency side tray are provided at different places so that they do not come in contact with different types of electrical connection means, so that it is troublesome when loading the tray. No electrode confirmation and connection operation is required, the burden on the user is reduced, and electrical accidents can be prevented.
[0026]
Further, by variously changing the polarity connection of the trays in the reaction chamber, it is possible to perform cleaning by various methods depending on purposes, such as a method of cleaning mainly with ions and a method of cleaning mainly with radicals. In addition, by preparing trays of various structures in addition to the above, cleaning can be performed by various methods such as cleaning from both sides of a planar conductive cleaning object and batch cleaning of small parts. .
[Brief description of the drawings]
FIG. 1 is a partial cross-sectional perspective view of a plasma dry cleaner according to one embodiment of the present invention.
FIG. 2 is a perspective view showing a relationship between a high-frequency side tray (a) and a ground side tray (b) and a bus bar.
FIG. 3 is an explanatory diagram showing the relationship between the arrangement of various trays and a cleaning mode.
4A is a perspective view of an opening tray, and FIG. 4B is a cross-sectional view of a reaction chamber in use.
FIG. 5 is a sectional view of a reaction chamber in a magazine use mode.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Plasma dry cleaner 11 ... Reaction chamber 12 ... Control part 13 ... Slide rail 14 ... High frequency side bus bar 141 ... Terminal insertion port 15 ... Ground side bus bar 151 ... Terminal insertion port 20, 31, 32, 34, 36, 41, 53 54, tray 21 high frequency side tray 211 frame 212 insulating member 213 cleaning object mounting plate 22 ground side tray 24, 25 terminal 35 grid grid 42 opening tray 421 opening 422 Cleaning object 51: Small parts 52: Magazine

Claims (4)

a)直方体形状を有し、気密に閉塞可能な反応室と、
b)反応室の内壁面に設けられた、複数のトレイを反応室内に装入するためのスライドレールと、
c)トレイに設けられたトレイ側端子と反応室に設けられた反応室側端子とから成り、トレイが反応室内に装入されると両者が接触して反応室とトレイとを電気的に接続する電気接続手段と、
を備えることを特徴とするプラズマドライクリーナー。
a) a reaction chamber having a rectangular parallelepiped shape, which can be hermetically closed;
b) a slide rail provided on the inner wall surface of the reaction chamber for loading a plurality of trays into the reaction chamber;
c) It is composed of a tray side terminal provided on the tray and a reaction chamber side terminal provided in the reaction chamber, and when the tray is inserted into the reaction chamber, they come into contact with each other to electrically connect the reaction chamber and the tray. Electrical connection means;
A plasma dry cleaner comprising:
接地側トレイと高周波側トレイの2種類のトレイが用意され、接地側トレイの電気接続手段と高周波側トレイの電気接続手段が別異の箇所に設けられて他方の種類の電気接続手段とは係合しないようになっていることを特徴とする請求項1記載のプラズマドライクリーナー。Two types of trays, a ground side tray and a high frequency side tray, are provided, and the electrical connection means of the ground side tray and the electrical connection means of the high frequency side tray are provided at different places, and are related to the other type of electrical connection means. The plasma dry cleaner according to claim 1, wherein the plasma dry cleaner does not match. 請求項1又は2記載のプラズマドライクリーナーで用いる、グリッド状のトレイ。A grid-like tray used in the plasma dry cleaner according to claim 1. 請求項1又は2記載のプラズマドライクリーナーで用いる、開口を有するトレイ。A tray having an opening for use in the plasma dry cleaner according to claim 1.
JP15047197A 1997-05-23 1997-05-23 Plasma dry cleaner Expired - Lifetime JP3595433B2 (en)

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JP4733815B2 (en) * 2000-08-01 2011-07-27 株式会社日立ハイテクインスツルメンツ Plasma cleaning device
KR101362812B1 (en) * 2008-02-11 2014-02-14 (주)소슬 Apparatus for supporting substrate and apparatus for treating substrate having the same
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JPS61130493A (en) * 1984-11-28 1986-06-18 Tokuda Seisakusho Ltd Dry etching method
JPS61190944A (en) * 1985-02-20 1986-08-25 Hitachi Chiyou Lsi Eng Kk Dry etching device
JPH0637044A (en) * 1992-07-13 1994-02-10 Plasma Syst:Kk Plasma processing apparatus
JPH0684837A (en) * 1992-09-04 1994-03-25 Mitsubishi Electric Corp Plasma treatment apparatus
JP3395331B2 (en) * 1994-02-18 2003-04-14 大同特殊鋼株式会社 Plasma cleaning equipment
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