JP3603789B2 - Semiconductor device - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device. In particular, it relates to a semiconductor device having an insulating film (dielectric thin film) supported in the air, such as an infrared sensor or a flow sensor.
[0002]
[Background Art]
Semiconductor devices such as flow sensors and infrared sensors have a dent on the surface of a silicon substrate, a dielectric thin film is formed on the surface of the silicon substrate so as to cover the dent, and a resistance is formed on the dielectric thin film. There is one in which a sensor element such as an element or a thermoelectric conversion element is formed (for example, Japanese Patent Publication No. 3-52028).
[0003]
In such a semiconductor device, after a dielectric thin film is formed on the surface of the silicon substrate, it must be etched from the surface side of the silicon substrate to form a depression in the silicon substrate. As a manufacturing method, the surface of the silicon substrate is covered with a dielectric thin film, and a plurality of etching holes for etching the silicon substrate are opened in the dielectric thin film on the surface, and an etching solution penetrates the silicon substrate from the etching holes. Then, the silicon substrate is etched and an undercut is performed by anisotropic etching to form a depression on the surface of the silicon substrate. At this time, the dielectric thin film facing the depression of the silicon substrate becomes a bridge portion having a structure supported in the air, and the depression achieves thermal insulation between the dielectric thin film and the silicon substrate. Further, on the surface of the dielectric thin film, a wiring pattern serving as a physical quantity detection unit such as a resistance element or a thermoelectric conversion element is formed.
[0004]
[Problems to be solved by the invention]
However, the above-mentioned dielectric thin film has a thickness of several microns, is very thin compared to the silicon substrate, and is liable to be broken. Particularly, stress concentration is likely to occur in a region between adjacent etching holes, and a crack is formed. It is easily broken or broken.
[0005]
In the infrared sensor 71, as shown in FIGS. 16A and 16B, a thermoelectric conversion element 73 is disposed on the surface of a dielectric thin film 72, and the surface of the dielectric thin film 72 is covered with an infrared absorbing film (not shown). It is a thing. When the infrared ray 74 is received, the infrared absorption film absorbs the infrared ray 74 and the temperature rises. Therefore, the electromotive force of the thermoelectric conversion element 73 due to the temperature rise is measured by the voltmeter 75 to measure the amount of received infrared ray. I do.
[0006]
When a crack occurs in the dielectric thin film 72 in such an infrared sensor 71, the corresponding portion of the dielectric thin film 72 is deformed as shown in FIG. Movement becomes unstable, and as a result, the value of the voltage measuring device 75 fluctuates, causing a problem that the measured value becomes unstable. Furthermore, as shown in FIG. 18, when the crack progresses from the crack, the thermoelectric conversion element 73 formed on the surface of the dielectric thin film 72 is also broken, and may not be used as the infrared sensor 71.
[0007]
Further, as shown in FIGS. 19A and 19B, the flow sensor 81 forms a dielectric thin film 83 on the surface of a silicon substrate 82 having a depression 84 formed on the surface, and A resistance element 85 serving as a heating element is provided, and thermoelectric conversion elements 86 are arranged on both sides thereof. A voltage is applied to the resistance element 85 from a power supply 88 to generate heat, and the temperature of the fluid is measured by a voltage measuring device 87 connected to thermoelectric conversion elements 86 arranged at symmetrical positions on both sides of the resistance element 85. . At this time, when the fluid passes through the surface of the flow sensor 81, the heat of the resistance element 85 is transported by the fluid, and the temperature decreases on the windward side and increases on the leeward side. Thus, the flow rate or flow velocity of the passing fluid can be measured.
[0008]
Even in such a flow sensor 81, when a crack occurs in the dielectric thin film 83, the corresponding portion of the dielectric thin film 83 is deformed as shown in FIG. 20, and the fluid flows around the deformed portion, and the flow of the fluid is disturbed. As a result, the values of the respective voltage measuring devices 87 fluctuate and the measured values become unstable, and the distribution of temperature associated with the upstream and downstream of the fluid does not occur, which hinders the flow rate measurement. Furthermore, as shown in FIG. 21, when the crack progresses from the crack, the resistance element 85 and the thermoelectric conversion element 86 formed on the surface of the dielectric thin film 83 are also broken, and cannot be used as the flow sensor 81.
[0009]
As a method of inspecting a defect in a manufacturing process, there is a method of directly checking a dielectric thin film for breakage visually. However, since a semiconductor device can collect several hundred or several thousand pieces from a single silicon wafer, when performing visual inspection, it is necessary to inspect such a large amount with the human eyes, which is extremely difficult. You have to work hard and inevitably make more mistakes. Therefore, it is desired that a defect can be inspected by an automatic inspection device.
[0010]
DISCLOSURE OF THE INVENTION
It is an object of the present invention to provide a semiconductor device capable of automatically detecting a defect such as a crack or break generated in a region between etching holes formed in a dielectric thin film (insulating thin film) by a resistance test. Is to do.
[0011]
A semiconductor device according to the present invention includes a semiconductor substrate having a recess formed on a surface thereof, an insulating thin film provided on a surface of the semiconductor substrate so as to cover the recess, and a circuit pattern provided on the insulating thin film. Equipmente,Etching holes for forming the pits by etching are arranged in portions of the insulating thin film facing the pits.Semiconductor devices,The insulating thin film passes through a region between adjacent etching holes.For breaking inspection consisting of conductor or resistor on topThe circuit pattern is wiredYou.
[0012]
In the semiconductor device according to the present invention, the insulating thin film is formed so as to pass through a region between adjacent etching holes.For breaking inspectionSince the circuit pattern is wired,For breaking inspectionBy checking the conduction state or resistance value of the circuit pattern, cracks and breaks in the region between adjacent etching holesInspectioncan do. As a result, breakage of the area between the etching holes by the automatic inspection deviceInspectionIt becomes possible to do.
[0013]
Of the present inventionIn one embodiment, the insulating thin film has a quadrilateral shape, and the etching hole isA plurality of etching holes are arranged in a cross shape so as to extend between two opposing two sides of the insulating thin film, and a circuit pattern is formed on the insulating thin film so as to pass through a region between the adjacent etching holes. At the intersection of the arrangement of the etching holes, the alignment is performed along the arrangement of the etching holes extending in the other direction from the arrangement of the etching holes extending in one direction.For breaking inspectionThe circuit pattern is wiredYou.
[0014]
According to this semiconductor device, the arrangement is such that the arrangement of the etching holes extending in one direction is along the arrangement of the etching holes extending in the other direction.For breaking inspectionBecause the circuit pattern is wired, even where the arrangement of the etching holes crosses in a cross shapeFor breaking inspectionThe circuit patterns can be kept electrically insulated from each other without crossing each other. Therefore, bothFor breaking inspectionConnect a resistance measurement device to the circuit patternFor breaking inspectionCircuit patternBreakToInspectionIn this case, the number of necessary resistance measuring devices can be reduced.
[0015]
In the embodiment of the present invention,For breaking inspectionIt is desirable that the circuit pattern be wired in a meandering manner along the arranged etching holes. Along the arranged etching holesFor breaking inspectionBy wiring the circuit pattern, one line is formed along a plurality of regions between the etching holes.For breaking inspectionCircuit pattern can be wired,For breaking inspectionThe number of circuit patterns can be reduced. In particular, when the etching hole is opened in a quadrilateral,For breaking inspectionWhat is necessary is just to wire a circuit pattern along three sides of an etching hole.
[0016]
Further, in the embodiment of the present invention,For breaking inspectionThe circuit pattern may be used for conducting current inspection when inspecting for breakage of the insulating thin film, and may be used as a heating heater when measuring a predetermined physical quantity. With this configuration, the break of the insulating thin film can be inspected by using the circuit pattern for the heating heater, and the break of the insulating thin film in the semiconductor device can be automatically inspected without increasing the manufacturing process of the semiconductor device. Can be.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
(1st Embodiment)
1A and 1B are a plan view and a sectional view showing an infrared sensor according to one embodiment of the present invention. In this infrared sensor 11, a dielectric thin film 13 is formed on a surface of a semiconductor substrate 12 such as a silicon substrate, and a recess 14 having a rectangular planar shape and a bottom is formed on the surface of the semiconductor substrate 12. The open portion of the depression 14 is covered with the dielectric thin film 13. In a region (bridge portion 19) of the dielectric thin film 13 which is supported in the air facing the depression 14, a first etching hole pattern 15 and a second etching hole pattern 16 arranged in a cross shape are formed. I have.
[0018]
FIG. 2 is a plan view showing a part of the first etching hole pattern 15 and the second etching hole pattern 16. As shown in FIGS. 1 and 2, the first and second etching hole patterns 15 and 16 are configured by arranging a plurality of parallelogram-shaped etching holes 17a and 17b close to each other. However, the two etching hole patterns 15 and 16 intersect in a cross shape at the center of the depression 14, and the etching hole 18 at the intersection is formed in a diamond shape. Furthermore, assuming a rectangle circumscribing each of the etching holes 17a, 17b, and 18, each of the etching holes 17a, 17b, and 18 is formed such that at least a part of a virtual rectangle in the adjacent etching holes 17a, 17b, and 18 contacts or overlaps. 18 are formed. A relatively narrow beam-shaped region (hereinafter referred to as a beam portion) 20 is formed between the adjacent etching holes 17a, 17b, and 18.
[0019]
In terms of crystal orientation, the semiconductor substrate 12 is formed of a silicon substrate having a {100} surface, and the two etching hole patterns 15 and 16 extend and intersect in the <110> direction. Each of the etching holes 17a and 17b includes a side parallel to the direction in which the etching hole patterns 15 and 16 extend (the <110> direction) and a side inclined by 45 degrees with respect to the side. For example, on a (001) plane silicon substrate, an etching pattern extending in the [110] direction and an etching pattern extending in the [-110] direction are formed, and they are crossed at the center and arranged in a cross shape as a whole. Each etching hole is composed of a side extending in the [110] direction or the [-110] direction and a side inclined by 45 degrees with respect to the side. Alternatively, an etching pattern extending in the [011] direction and an etching pattern extending in the [0-11] direction are formed on a (100) plane silicon substrate, and are crossed at the central portion and arranged in a cross shape as a whole. Each of the etching holes is constituted by a side extending in the [011] direction or the [0-11] direction and a side inclined by 45 degrees with respect to the side.
[0020]
In addition, a large number of thermoelectric conversion elements 21 (such as thermocouples) are arranged on the upper surface of the dielectric thin film 13, and are connected in series via a connection line 22. Then, both ends of the thermoelectric conversion element 21 connected in series are drawn out to the outer peripheral portion (heat sink portion 25) where the semiconductor substrate 12 and the dielectric thin film 13 are joined by the lead-out wiring 23 and connected to the external connection electrode 24. The signal detected by the thermoelectric conversion element 21 can be output to the outside.
[0021]
On the surface of the dielectric thin film 13, resistance patterns 26 and 27 are wired along the three sides of each of the etching holes 17a and 17b including the beam portion 20 so as to meander around each of the etching holes. . At the center of the dielectric thin film 13, as shown in FIG. 2, the resistance pattern 26 laid on the left half of the first etching hole pattern 15 and the upper half of the second etching hole pattern 16 were wired. The resistance pattern 26 connected to the lower half of the second etching hole pattern 16 and the resistance pattern 27 connected to the right half of the first etching hole pattern 15 are continuous. Both ends of the two resistance patterns 26 and 27 are connected to external connection electrodes 28 and 29 provided at the center of each side of the heat sink 25, respectively. Therefore, the resistance patterns 26 and 27 are electrically insulated from each other, and the resistance between the external connection electrodes 28 and the resistance between the external connection electrodes 29 are measured to detect the resistance value of each of the resistance patterns 26 and 27. can do.
[0022]
Next, a manufacturing process of the infrared sensor 11 will be described with reference to FIGS. 3 (a) to 3 (f) and FIGS. 4 (g) to 4 (n). First, a dielectric thin film 13 having a thickness of several μm is formed on the surface of a flat semiconductor substrate (wafer) 12 (FIGS. 3A and 3B), and a thermoelectric conversion element 21 is formed on the dielectric thin film 13. After forming the resistance patterns 26 and 27 and other circuit patterns, the surface of the dielectric thin film 13 is covered with a film 30 made of a photosensitive material (resist) [FIGS. 3 (c) and 3 (d)]. Next, a mask 32 on which an etching hole pattern 31 is drawn is superimposed on the photosensitive film 30, and the photosensitive film 30 is exposed through the mask 32 (FIGS. 3E and 3F).
[0023]
Next, when the photosensitive film 30 is developed using a developing solution, the photosensitive film 30 is partially removed in an area where an etching hole is to be formed, and an opening 33 is formed (FIG. 4G). h)]. The dielectric thin film 13 is etched through the opening 33, and etching hole patterns 15 and 16 are opened in the dielectric thin film 13 (FIGS. 4I and 4J), and the photosensitive film 30 on the dielectric thin film 13 is removed. [FIG. 4 (k) (l)]. Thereafter, the semiconductor substrate 12 is immersed in an etching solution such as an aqueous solution of potassium hydroxide (KOH) together with the semiconductor substrate 12 through the etching holes 17a, 17b and 18 to gradually bring the semiconductor substrate 12 into an anisotropic state. A desired recess 14 is formed on the surface of the semiconductor substrate 12 by reactive etching [FIGS. 4 (m) and (n)]. When performing this etching, a protective film is also formed on the back surface of the semiconductor substrate 12 so that the back surface of the semiconductor substrate 12 is not etched.
[0024]
Also, the etching hole patterns 15 and 16 as described above, for example, (001) of the semiconductor substrate (silicon substrate) 12 using the [110] direction and [−110] on the dielectric thin film 13 formed on the (001) plane. When the surface is anisotropically etched, the region exposed from each of the etching holes 17a, 17b, 18 is etched in a direction ([001] direction) perpendicular to the substrate surface. Further, in the direction parallel to the substrate surface, in the [110] direction and the [-110] direction parallel to the etching hole patterns 15 and 16, the (111) plane is exposed, so that the etching is difficult to proceed, and is inclined by 45 degrees. The etching proceeds toward a plane parallel to the side. As a result, first, a cross-shaped region along the etching hole patterns 15 and 16 is removed by etching on the surface of the semiconductor substrate 12. Since the regions thus etched cross each other in a cross shape, the fastest etching surface (411) appears, so that the etching proceeds rapidly in the [100] and [010] directions, and when the diagonal line is reached ( The (411) plane disappears, and the (001) plane governs the etching newly. As a result, a truncated pyramid-shaped depression 14 is formed between the dielectric thin film 13 and the semiconductor substrate 12 in a short time.
[0025]
FIG. 5 shows a process after a plurality of infrared sensors 11 are formed on a semiconductor substrate (wafer) 12 by a semiconductor process as described above until the products are shipped as a product. The semiconductor substrate 12 in which the plurality of infrared sensors 11 are built as described above (Step S1) is separated into individual infrared sensors 11 by dicing (Step S2), and then the dielectric thin film 13 is inspected for breakage. (Step S3).
[0026]
In this inspection process, as shown in FIG. 6, a resistance measuring device 34 is connected between the external connection electrodes 28 and 29 of the two resistance patterns 26 and 27, respectively, and the resistance values of the resistance patterns 26 and 27 are measured. Thus, a crack or break in the beam portion 20 of the dielectric thin film 13 is detected. For example, when the resistance values of the resistance patterns 26 and 27 are much larger than a predetermined value or are infinite, the resistance patterns 26 and 27 are partially or completely disconnected, and the beams of the dielectric thin film 13 It is determined that a crack or break has occurred in the part 20 or the like. At this time, since the resistance patterns 26 and 27 do not intersect each other, it is possible to measure the presence / absence of disconnection of the two resistance patterns 26 and 27 with two resistance measuring devices 34 as shown in FIG. When a crack or break in the dielectric thin film 13 is detected from the resistance values of the resistance patterns 26 and 27 in this way, the infrared sensor 11 may be immediately determined to be defective, or the infrared sensor 11 may be visually inspected again (using a microscope). You may. Then, the infrared sensor 11 finally determined as a defective product is discharged from the line as a defective product.
[0027]
According to such an inspection method, the inspection process for defective products can be mechanized, the required inspection time can be reduced to about 1/4 compared to the case of the visual inspection, and the cost can be reduced by the labor cost. Can be. Further, since the inspection accuracy is improved, there is an advantage that the possibility of mounting a defective product is reduced.
[0028]
The infrared sensor 11, which is determined to be non-defective in the inspection process, has the resistance measurement device 34 removed, and is mounted on a package, a circuit board, or the like (step S5). Then, the infrared sensor 11 that has passed the final inspection is shipped as a product (step S6).
[0029]
FIG. 7 shows a state of the infrared sensor 11 at the time of measurement (at the time of actual use). A voltage measuring device 35 is connected between the external connection electrodes 24 to which both ends of the thermoelectric conversion element 21 are connected. When the infrared sensor 11 is irradiated with infrared rays, the temperature of the heat sink portion 25 having a large heat capacity does not rise, but the temperature of the bridge portion 19 (the surface of which is covered with an infrared absorbing film) having a small heat capacity rises, resulting in thermoelectricity. Since an electromotive force is generated in the conversion element 21, the amount of infrared rays can be measured by measuring the electromotive force with the voltmeter 35.
[0030]
(Second embodiment)
8A and 8B are a plan view and a cross-sectional view of a flow sensor 41 according to another embodiment of the present invention. Also in this flow sensor 41, a recess 14 having a rectangular planar shape and a bottom is formed on the upper surface of the semiconductor substrate 12, and the dielectric thin film 13 is formed on the upper surface of the semiconductor substrate 12. A first etching hole pattern 15 and a second etching hole pattern 16 are formed in the bridge portion 19 of the dielectric thin film 13 supported on the depression 14, and the first and second etching hole patterns 15, Reference numerals 16 intersect at the center of the dielectric thin film 13 and are arranged so as to form a cross as a whole. Further, the shape of the etching holes 17a, 17b is a parallelogram, and assuming a rectangle circumscribing each of the etching holes 17a, 17b, 18, at least one virtual rectangle in the adjacent etching holes 17a, 17b, 18 is assumed. Parts touch or overlap. In the flow sensor 41, the crystal orientation of the semiconductor substrate 12 and the relationship between the crystal orientation and the etching hole pattern are the same as those in the first embodiment.
[0031]
On the dielectric thin film 13 of the flow sensor 41, a plurality of first thermoelectric conversion elements 42 connected in series are arranged in one region with the first etching hole pattern 15 interposed therebetween. A plurality of second thermoelectric conversion elements 43 connected in series are arranged in the other region with the hole pattern 15 interposed therebetween. Both ends of the first thermoelectric conversion element 42 are connected to external connection electrodes 44 formed at the corners of the dielectric thin film 13, and both ends of the second thermoelectric conversion element 43 are external connection electrodes 45 formed at the corners of the dielectric thin film 13. And the signals detected by the thermoelectric conversion elements 42 and 43 can be output from the external connection electrodes 44 and 45 to the outside. Further, an external connection electrode 44 connected to one end of the first thermoelectric conversion element 42 and an external connection electrode 45 connected to one end of the second thermoelectric conversion element 43 are connected to each other by a connection pattern 46.
[0032]
On the surface of the dielectric thin film 13, the resistance pattern 47 is formed so as to meander around the etching holes 17 a, 17 b, and 18 along the three sides of the etching holes 17 a, 17 b, and 18 including the beam portion 20. Are wired. In particular, at the center of the dielectric thin film 13, as shown in FIG. 9, the resistance pattern 47 wired in a meandering manner along the first etching hole pattern 15 and the wiring formed in a meandering manner along the second etching hole pattern 16. The resistance pattern 47 intersects (or the resistance pattern 47 is formed in an annular shape around the central etching hole 18), and both resistance patterns 47 are electrically connected to each other. Further, both ends of the resistance pattern 47 wired in a meandering manner along the first etching hole pattern 15 are connected to external connection electrodes 48 formed in the heat sink portion 25, and meandering along the second etching hole pattern 16. Both ends of the resistor pattern 47 wired in the shape are also connected to the external connection electrodes 49 formed on the heat sink 25. Reference numeral 50 denotes a resistance element for temperature correction.
[0033]
When the defective product inspection of the flow sensor 41 is performed, as shown in FIG. 10, of the four external connection electrodes 48 and 49, one of the four external connection electrodes 48 and 49 is used as a reference and the other three external connection electrodes are used as a reference. Three resistance measuring devices 34 are connected to the connection electrodes respectively, and any one of four positions between the intersection of the resistance patterns 47 and the external connection electrodes 48 and 49 based on the measurement value of each resistance measurement device 34. It is possible to detect whether or not the resistance pattern 47 is disconnected, and thereby it is possible to inspect whether or not the beam portion 20 is cracked or broken.
[0034]
When measuring the flow rate or the flow rate of the fluid (gas) with the flow sensor 41 determined to be non-defective, as shown in FIG. 11, the flow sensor 41 is sandwiched between the first thermoelectric conversion element 42 and the second thermoelectric conversion element 43. A voltage applying means 51 such as a DC voltage source or a battery is connected to the external connection electrodes 48 at both ends of the resistance pattern 47, and a constant current is applied only to the resistance pattern 47 around the first etching hole pattern 15 to generate heat. In addition, the voltage measuring device 35 is connected to the external connection electrodes 44 at both ends of the first thermoelectric conversion element 42, and the voltage measurement device 35 is also connected to the external connection electrodes 45 at both ends of the second thermoelectric conversion element 43. The temperature on both sides of the hole pattern 15 is measured. Since the first thermoelectric conversion element 42 and the second thermoelectric conversion element 43 are symmetrically arranged with the resistance pattern 47 around the first etching hole pattern 15 interposed therebetween, when the fluid does not flow on the surface of the flow sensor 41. In FIG. 11, the measured temperature of the first thermoelectric conversion element 42 and the measured temperature of the second thermoelectric conversion element 43 are equal, but, for example, from the first thermoelectric conversion element 42 side to the second thermoelectric conversion element 43 side as shown in FIG. When the fluid flows, the heat generated in the resistance pattern 47 by the fluid is transported toward the second thermoelectric conversion element 43, so that the measured temperature of the second thermoelectric conversion element 43 becomes the measured temperature of the first thermoelectric conversion element 42. The flow rate or flow rate of the fluid can be determined from the temperature difference.
[0035]
According to such a flow sensor 41, cracks and breaks in the beam portion 20 can be prevented.InspectionSince the resistance pattern for the heating and the resistance pattern for the heating heater can also serve as the resistance pattern 47, the structure of the flow sensor 41 is simplified, the manufacturing process is simplified, and the cost can be reduced.
[0036]
In this embodiment, the resistance pattern for heat generation isBreak inspectionCircuit pattern for the thermoelectric conversion element.Break inspectionIt is also possible to use the same as a circuit pattern.
[0037]
(Third embodiment)
FIGS. 12A and 12B are a plan view and a sectional view showing the structure of an infrared sensor 61 according to still another embodiment of the present invention. The infrared sensor 61 has substantially the same configuration as the infrared sensor 11 according to the first embodiment, but differs in that the resistance patterns 26 and 27 are connected in parallel. That is, according to this embodiment, both ends of the resistor pattern 26 wired in a meandering manner from the left half of the first etching hole pattern 15 to the upper half of the second etching hole pattern 16 are connected to the external connection electrodes 63 and 64. Then, both ends of the resistor pattern 27, which is arranged in a meandering manner from the lower half of the second etching hole pattern 16 to the right half of the first etching hole pattern 15, are connected to the same external connection electrodes 63, 64 via the routing circuit pattern 62. are doing. Also in this embodiment, the resistance pattern 26 and the resistance pattern 27 are separated from each other at the center of the dielectric thin film 13 (see FIG. 2).
[0038]
In the process of inspecting a defective product of the infrared sensor 61, as shown in FIG. 13, one resistance measuring device 34 is connected to two external connection electrodes 63 and 64. FIG. 14 is an equivalent circuit diagram at this time. The resistance pattern 26 and the resistance pattern 27 are connected in parallel, and the resistance measuring device 34 is connected to both ends. Assuming that the resistance value of the resistance pattern 26 is R1 and the resistance value of the resistance pattern 27 is R2, as shown in FIG. 14, if the resistance pattern 26 and the resistance pattern 27 are not disconnected, the resistance is measured by the resistance measuring device 34. The resistance value R is
R = (R1 · R2) / (R1 + R2)
It becomes. On the other hand, when only the resistance pattern 26 is disconnected, the resistance value R measured by the resistance measuring device 34 is R = R2, and when only the resistance pattern 27 is disconnected, the resistance measurement is performed. The resistance value R measured by the measuring device 34 is R = R1. Further, when both the resistance pattern 26 and the resistance pattern 27 are disconnected, the resistance value R measured by the resistance measuring device 34 becomes infinite (R = ∞). Therefore, it is possible to know from the measured value of the resistance measuring device 34 whether or not the resistance patterns 26 and 27 are disconnected and which of the resistance patterns is disconnected. it can.
[0039]
When this is used as the infrared sensor 61, a voltage measuring device 35 may be connected between the external connection electrodes 24 of the thermoelectric conversion element 21, as shown in FIG. 15, as in the first embodiment.
[0040]
In the above embodiment, the case of the infrared sensor and the flow sensor has been described. However, the semiconductor device of the present invention can be used as various semiconductor sensors such as a thermal sensor and a temperature sensor or as a micro heater. In the above-described embodiment, the thermoelectric conversion element and the resistance pattern are formed. However, in addition to the above, a resistance element having a predetermined shape and a constant heating action, and a second resistance element that captures a change in temperature are formed on the dielectric thin film In the inspection process, any one of the resistance elements may be used to inspect the beam for breakage.
[0041]
【The invention's effect】
According to the present invention, an insulating thin film is formed so as to pass through a region between adjacent etching holes.For breaking inspectionSince the circuit pattern is wired,For breaking inspectionBy checking the conduction state or resistance value of the circuit pattern, cracks and breaks in the region between adjacent etching holesInspectionThe automatic inspection equipment can break the area between the etching holes.InspectionIt becomes possible to do.
[Brief description of the drawings]
FIG. 1A is a plan view illustrating an infrared sensor according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line X1-X1 of FIG.
FIG. 2 is an enlarged view showing an intersecting portion between a first etching hole pattern and a second etching hole pattern in the infrared sensor.
3 (a) to 3 (f) are schematic plan views or schematic cross-sectional views for explaining a manufacturing process of the infrared sensor of FIG.
4 (g) to (n) are continuation diagrams of FIG.
FIG. 5 is a diagram showing each process from a manufacturing process of the infrared sensor of FIG. 1 by a semiconductor process to shipping.
FIG. 6 is a diagram illustrating an inspection process of the infrared sensor of FIG. 1;
FIG. 7 is a diagram illustrating a use state of the infrared sensor of FIG. 1;
FIGS. 8A and 8B are a plan view and a sectional view showing a flow sensor according to another embodiment of the present invention.
FIG. 9 is an enlarged view showing an intersection of a first etching hole pattern and a second etching hole pattern in the flow sensor of the above.
FIG. 10 is a diagram illustrating an inspection process of the flow sensor of FIG.
FIG. 11 is a diagram illustrating a use state of the flow sensor of FIG. 8;
12A and 12B are a plan view and a sectional view showing an infrared sensor according to still another embodiment of the present invention.
FIG. 13 is a diagram illustrating an inspection process of the infrared sensor of FIG.
14 is an equivalent circuit diagram of the inspection step in FIG.
FIG. 15 is a diagram illustrating a state of use of the infrared sensor of FIG. 12;
FIGS. 16A and 16B are a schematic plan view and a schematic sectional view showing the structure of a conventional infrared sensor.
FIG. 17 is a schematic cross-sectional view showing a state in which a dielectric thin film has been broken in the infrared sensor.
18 is a schematic plan view showing a state in which a dielectric thin film is broken in the infrared sensor of FIG.
FIGS. 19A and 19B are a schematic plan view and a schematic sectional view showing the structure of a conventional flow sensor.
FIG. 20 is a schematic sectional view showing a state in which a dielectric thin film is broken in the flow sensor of the above.
FIG. 2119FIG. 5 is a schematic plan view showing a state in which a dielectric thin film is broken in the flow sensor of FIG.

Claims (4)

A semiconductor substrate having a depression formed on its surface;
An insulating thin film provided on the surface of the semiconductor substrate so as to cover the depression,
E Bei a circuit pattern on said insulating film,
In a semiconductor device, an etching hole for forming the dent by etching is arranged at a portion of the insulating thin film facing the dent ,
A semiconductor device, wherein a break inspection circuit pattern made of a conductor or a resistor is wired on the insulating thin film so as to pass through a region between adjacent etching holes. The insulating thin film has a quadrilateral shape,
The etching holes are arranged in a cross shape so as to bridge between two opposite sides of the insulating thin film, and a circuit pattern is formed on the insulating thin film so as to pass through a region between adjacent etching holes. In the intersection of the arrangement of the etching holes, the circuit pattern for fracture inspection is wired from the arrangement of the etching holes extending in one direction to the arrangement of the etching holes extending in the other direction. 2. The semiconductor device according to claim 1, wherein: 2. The semiconductor device according to claim 1, wherein the break inspection circuit pattern is wired in a meandering shape along the arranged etching holes. 3. 3. The semiconductor device according to claim 2, wherein the break inspection circuit pattern is wired along three sides of the etching hole opened in a quadrilateral shape.

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