JP3604906B2 - Substrate processing apparatus and method - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
According to the present invention, an organic solvent is supplied to a thin substrate (hereinafter, simply referred to as a “substrate”) such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, and a substrate for an optical disk, which have been subjected to a cleaning treatment with pure water. After that, the present invention relates to a substrate processing apparatus and method for performing a drying process by reducing the pressure.
[0002]
[Prior art]
Conventionally, in the above-described substrate manufacturing process, the substrate is immersed in an etching solution such as hydrofluoric acid in a processing tank housed in a closed processing chamber to perform an etching process or a cleaning process, and then the etching solution in the processing bath. Is replaced with pure water to perform a cleaning process on the substrate, and then perform a reduced-pressure drying process in the processing chamber on the substrate pulled up from the pure water.
[0003]
In such an apparatus, usually, after the cleaning process with pure water is completed, before the substrate is pulled up from the pure water in the processing tank, or while the substrate is pulled up, the vapor of isopropyl alcohol (hereinafter referred to as “IPA”) as an organic solvent is vaporized. Is supplied into the processing chamber, and IPA is condensed on the surface of the substrate to replace water attached to the substrate with IPA. After the atmosphere in the processing chamber is replaced with nitrogen gas as an inert gas, and pure water in the processing tank is drained, the substrate is dried by reducing the pressure in the sealed processing chamber (drying under reduced pressure). processing).
[0004]
[Problems to be solved by the invention]
However, in this drying process, a phenomenon that particles adhered to the substrate surface after the reduced-pressure drying process was often observed. Particles attached in the drying process deteriorate the quality of the final product, such as a semiconductor device, and cause a problem of lowering the yield.
[0005]
The present invention has been made in view of the above problems, and has as its object to provide a substrate processing apparatus and method capable of preventing particles from adhering to a substrate when performing drying under reduced pressure.
[0006]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the invention according to claim 1 is to reduce the pressure after supplying the vapor of the organic solvent to the substrate after the cleaning treatment with the pure water to replace the pure water attached to the substrate with the organic solvent. A substrate processing apparatus that performs a drying process on the substrate by setting a state, a processing tank that performs the cleaning process, a processing chamber that houses the processing bath, and performs the drying process, and a vapor of the organic solvent is formed. By heating the organic solvent vapor heating means to be heated and the vapor of the organic solvent heated by the organic solvent vapor heating means into the processing chamber, the temperature of the substrate reduced by the reduced pressure state during the drying processing is reduced. An organic solvent vapor supply means for raising the temperature of the dew point of the water in the processing chamber and the dew point of the organic solvent at that time, whichever is higher, and the heated vapor of the organic solvent. And a, a pressure reducing means for reducing the pressure of the processing chamber after being.
[0007]
Further, according to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect of the present invention, after the inert gas heating means for heating the inert gas and the heated vapor of the organic solvent are supplied, And an inert gas supply unit configured to supply the inert gas heated by the inert gas heating unit into the processing chamber before depressurizing the processing chamber.
[0008]
The invention according to claim 3 is a substrate processing method for performing a drying process in a processing chamber on a substrate that has been subjected to a cleaning process with pure water, the method comprising: an organic solvent vapor heating step of heating an organic solvent vapor; An organic solvent vapor supply step of supplying vapor of the organic solvent heated after the completion of the cleaning process into the processing chamber to replace the pure water attached to the substrate with the organic solvent, and raising the temperature of the substrate. When the vacuum step of the vapor of the organic solvent which is heated to reduce the pressure inside the processing chamber after being supplied, provided with a water in the processing chamber at that time the temperature of the substrate decreases have you to the decompression step In the organic solvent vapor heating step, the vapor of the organic solvent is heated so as to be higher than any one of the dew point of the organic solvent and the dew point of the organic solvent.
[0009]
According to a fourth aspect of the present invention, in the substrate processing method according to the third aspect of the present invention, there is provided an inert gas heating step of heating an inert gas and after the heated vapor of the organic solvent is supplied. An inert gas supply step of supplying a heated inert gas into the processing chamber before reducing the pressure in the processing chamber.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
<A. Knowledge as the basis for solving the problem and principle of the present invention>
In order to solve the above-mentioned problem, that is, the problem of particle adhesion in the reduced-pressure drying process, the present inventors have made intensive studies and found the following findings.
[0013]
In the above-described conventional technique, although the atmosphere in the processing chamber is replaced with nitrogen gas before the drying under reduced pressure, it is considered that the vapor of IPA still remains in the processing chamber. Further, since water droplets adhere to the processing tank after draining, water vapor also exists in the processing chamber before the pressure reduction.
[0014]
On the other hand, when the pressure in the processing chamber is reduced, the internal energy of the gas in the processing chamber is reduced, and the vaporization of water droplets attached to the processing tank is promoted, so that the heat of vaporization is deprived, thereby lowering the temperature. Then, when the temperature of the substrate decreases and becomes lower than the dew point of water vapor or IPA vapor, water or IPA condenses on the substrate surface. This will be further described with reference to FIG.
[0015]
FIG. 6 is a diagram showing a saturated vapor pressure curve. As described above, before the pressure reduction, the water vapor and the IPA vapor exist in the processing chamber, and some of them remain even during the pressure reduction. Then, the vapor pressure of water or IPA in vacuo When P _1, as shown in FIG. 6, the temperature T ₁ is a dew point of water or IPA.
[0016]
Here, conventionally, the temperature of the substrate before decompression is T _2, gradually decreases the substrate temperature is the temperature drop due to pressure reduction, condensation of water or IPA substrate surface of results when eventually the temperature T ₁ of less It is. However, since the pressure in the processing chamber is reduced, it is considered that the vapor pressure of water or IPA is reduced and the dew point itself is also lowered. However, when the temperature drop of the substrate is larger than the drop of the dew point, It is presumed that the temperature falls below the dew point and dew condensation occurs. Further, as for water, it is presumed that the decompression promotes the vaporization of water droplets attached to the processing tank, and suppresses a decrease in water vapor pressure in the processing chamber.
[0017]
Water or IPA vapor in the processing chamber may adsorb fine particles floating in the processing chamber, and when water or IPA droplets condensed on the substrate surface are dried, the fine particles remain on the substrate surface, It is considered to be particles.
[0018]
The present inventors have investigated the above-mentioned phenomena regarding the cause of the generation of particles due to drying under reduced pressure, and completed the present invention based on this finding.
[0019]
That is, in FIG. 6, if the substrate temperature before vacuum drying to approximately T _3, even if the substrate temperature by vacuum is lowered, no longer be the dew point T ₁ or less, also eliminates the condensation on the substrate surface occurs. As a result, generation of particles due to drying of the condensed droplets can be prevented. Conversely, the substrate temperature before drying under reduced pressure is set to T ₃ so that the substrate temperature during the reduced-pressure drying process is higher than the higher temperature T ₁ of the dew point of water in the processing chamber and the dew point of IPA at that time. If it is raised to such a level, generation of particles can be prevented.
[0020]
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0021]
<B. Configuration of Substrate Processing Apparatus>
FIG. 1 is a perspective view illustrating an overall configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. As shown in the drawing, this apparatus has a cassette loading section 2 into which a cassette C containing unprocessed substrates is loaded, and a cassette C from the cassette loading section 2 placed thereon and a plurality of substrates taken out from the inside at the same time. A substrate unloading unit 3, a substrate processing unit 5 in which unprocessed substrates removed from the cassette C are sequentially subjected to a cleaning process, and a substrate storage in which a plurality of processed substrates after the cleaning process are simultaneously stored in the cassette C. And a cassette unloading unit 8 for unloading a cassette C containing processed substrates. Further, on the front side (−Y side) of the apparatus, a substrate transfer / transport mechanism 9 is arranged from the substrate unloading section 3 to the substrate storage section 7, and before, during and after the cleaning processing. The substrate is transported or transferred from one location to another.
[0022]
The cassette loading section 2 includes a cassette transfer robot CR1 capable of horizontal movement, vertical movement, and rotation about a vertical axis, and transfers a pair of cassettes C placed at predetermined positions on the cassette stage 2a to the substrate unloading section 3. Transfer.
[0023]
The substrate take-out unit 3 includes a pair of holders 3a and 3b that move up and down. A guide groove is formed in the upper surface of each of the holders 3a and 3b, so that the unprocessed substrates in the cassette C can be supported vertically and parallel to each other. Therefore, when the holders 3a and 3b are raised, the substrate is taken out of the cassette C. The substrate taken out of the cassette C is transferred to the transfer robot TR provided in the substrate transfer / transfer mechanism 9 and is loaded into the substrate processing unit 5 after being moved horizontally.
[0024]
The substrate processing section 5 includes a chemical processing section 52 having a chemical tank for storing a chemical liquid, a rinsing processing section 54 having a rinsing tank for storing pure water, and processing for performing various chemical processing and rinsing processing in a single tank. And a multi-function processing unit 56 having a tank 562.
[0025]
In the substrate processing section 5, a first substrate immersion mechanism 55 is disposed on the rear side (+ Y side) of the chemical processing section 52 and the rinsing processing section 54, and is provided with a lifter head LH1 that can move up and down and traverse. Then, the substrate received from the transport robot TR is immersed in the chemical tank of the chemical processing section 52 or in the washing tank of the water washing section 54. A second substrate immersion mechanism 57 is disposed behind the multi-function processing unit 56, and the substrate received from the transfer robot TR is transferred to the multi-function processing unit 56 by a vertically movable lifter head 563a. In the processing tank 562.
[0026]
The substrate storage unit 7 has the same structure as the substrate unloading unit 3, and receives a processed substrate held by the transport robot TR by a pair of vertically movable holders 7 a and 7 b and stores the processed substrate in the cassette C.
[0027]
The cassette unloading section 8 has the same structure as that of the cassette loading section 2 and includes a movable cassette transfer robot CR2, and a pair of cassettes C placed on the substrate storage section 7 are placed on the cassette stage 8a. To a predetermined position.
[0028]
The substrate transfer mechanism 9 includes a transfer robot TR that can move horizontally and vertically. The substrate supported by the holders 3a and 3b of the substrate unloading unit 3 is immersed in the substrate processing unit 5 by holding the substrate by the pair of rotatable hands 91 and 92 provided in the transfer robot TR. Transfer to the lifter head LH1 side provided in the mechanism 55, transfer from the lifter head LH1 side to the lifter head 563a side provided in the adjacent second substrate immersion mechanism 57, or use the lifter head 563a side to hold the substrate storage unit 7. 7a and 7b.
[0029]
Next, a configuration and a schematic operation of the multi-function processing unit 56 will be described with reference to FIGS.
[0030]
Multifunctional processing unit 56 is mainly provided with a casing (processing chamber) 560, a shutter 561, the processing tank 562, a lifter 563, a lifter drive unit 564, IPA · _{N 2} supply unit 565 and the _{N 2} supply unit 566.
[0031]
The casing 560 has a substrate loading / unloading port TO on the upper surface, a seal member 560a fixed around the casing, and a piping 560b for exhaust on the bottom surface.
[0032]
The shutter 561 includes a shielding plate 561a and a guide 561b provided at the upper end of the side surface of the casing 560 so as to sandwich the shielding plate 561a from the front and back. Open and close by sliding. The airtightness of the casing 560 is maintained when the shutter 561 is closed by the seal member 560a provided on the upper surface of the casing 560.
[0033]
The processing tank 562 can store hydrofluoric acid (HF) as an etching solution and pure water as a cleaning solution (hereinafter collectively referred to as “processing solution”). Processing and cleaning processing are performed. A pipe 562c for returning the processing liquid, a pipe 562d for the waste liquid, and a pipe 562e for supplying the processing liquid are connected to the bottom surface of the processing tank 562. Further, a processing liquid recovery groove 562a is provided at the upper end of the four outer surfaces of the processing tank 562, and a processing liquid recovery pipe 562b is connected to the processing liquid recovery groove 562a.
[0034]
The lifter 563 includes, between the lifter head 563a and the holding plate 563b, three substrate guides 563c having a large number of holding grooves for holding the substrate W at predetermined intervals.
[0035]
The lifter driving section 564 is connected to a timing belt 564b attached to a servomotor 564a, a shaft 564c having a vertical longitudinal direction is connected, and the upper end of the shaft 564c is connected to a lifter head 563a of the lifter 563. The lifter 563 and the plurality of substrates W held by the lifter 563 are moved up and down by driving the servo motor 564a, and the transfer position TP of the substrate W with the transfer robot TR, the drying position DR of the substrate W, the substrate W shown in FIGS. It is possible to position W at the immersion position DP in the processing liquid.
[0036]
The IPA · N ₂ supply unit 565 is configured such that the pair of IPA · N ₂ supply pipes 565a are held on the inner side surfaces of the casing 560 by the brackets 565b, respectively, so that the liquid level of the processing solution stored in the processing tank 562 (the processing level). (The upper end of the tank 562). The IPA · _{N 2} supply pipe 565a is provided with upwardly opening plurality of supply ports IO for supplying IPA is an organic solvent together with a carrier gas _{N 2.} Further, the pipe 565c (see FIG. 4) is coupled to the not shown in FIG. 2 and FIG. 3 IPA · _{N 2} supply pipe 565a.
[0037]
The N ₂ supply section 566 is also attached to the inner side surface of the casing 560 by holding a pair of N ₂ supply pipes 566a by brackets 566b. N ₂ supply pipes 566a plurality of supply ports for supplying the N ₂ is to NO (the denoted by reference numerals only in part in FIG. 3) is provided. Further, the pipe 566c to but _{N 2} supply pipe 566a is not shown in FIGS. 2 and 3 (see FIG. 4) is connected.
[0038]
FIG. 4 is a schematic diagram showing a mechanism for supplying and discharging gas to and from the multi-function processing unit 56. The gas supply / discharge mechanism of the multi-function processing unit 56 is roughly divided into a function of supplying IPA vapor to the casing 560 using N ₂ as a carrier gas, a function of supplying only N _2, and a function of exhausting the casing 560 to exhaust gas from the casing 560. And a function to reduce the pressure.
[0039]
The function of supplying IPA vapor to the casing 560 using N ₂ as a carrier gas is to send the carrier gas N ₂ from the N ₂ supply source 60 to the IPA supply source 61 through the piping 60 b and to connect the piping 61 a and the piping 565 c to the three-way valve V _2. It is realized by communicating. IPA vapor using N ₂ as a carrier gas is generated at the IPA supply source 61 and is supplied into the casing 560 from the IPA / N ₂ supply unit 565 via the pipe 61a, the filter F, and the pipe 565c. Here, the pipe 565c is provided with a heater H2, and can heat the IPA vapor supplied into the casing 560.
[0040]
Function of supplying the only _{N 2} to the casing 560 is achieved by communicating the piping 60c and piping 566c by opening the valve V1. N ₂ is supplied from the N ₂ supply unit 566 into the casing 560 via the pipe 60c and the pipe 566c. Heater H1 is provided in the piping 566c, it is possible to heat the N ₂ supplied into the casing 560. The supply path N ₂ only, so communication between the pipe 60a and the pipe 565c to the three-way valve V2, or a path for supplying the IPA · _{N 2} supply unit 565 into the casing 560. In this case, it is possible to heat the _{N 2} by the heater H2, provided in the pipe 565c. Note that the heaters H1 and H2 correspond to "gas heating means".
[0041]
The function of exhausting from the casing 560 is realized by opening the valve V3 and operating the exhaust pump AP. The pipe 560b is connected to an exhaust line in the facility, and the inside of the casing 560 is depressurized by discharging gas in the sealed casing 560 to the exhaust line.
[0042]
<C. Processing Procedure>
A processing procedure in the multi-function processing unit 56 of the substrate processing apparatus 1 having the above configuration will be described. In the multi-function processing unit 56 of the present embodiment,
(1) Etching of the substrate W by HF,
(2) Cleaning treatment with pure water,
(3) Supply of IPA vapor and lifting of substrate W,
▲ 4 ▼ feed and pure water drainage N _2,
5) Dry under reduced pressure,
A series of processes are executed according to the procedure described above.
[0043]
First, when the etching process of the substrate W by HF is completed, HF is discharged through the pipe 562d, and pure water is supplied to the processing tank 562 from the pipe 562e. Then, the HF adhering to the substrate W is cleaned by immersing the substrate W in pure water.
[0044]
Next, when the cleaning of the substrate W with the pure water is completed, the lifter 563 lifts the substrate W from the pure water. That is, the lifter 563 raises the substrate W from the immersion position DP to the drying position DR. The lifting speed at this time is 5 mm / sec. It is about. When pulling up the substrate W from the pure water, thereby connected to the pipe 565c and the pipe 61a to the three-way valve V2, to supply the IPA vapor from the IPA · _{N 2} supply unit 565 into the casing 560.
[0045]
Here, the IPA vapor supplied into the casing 560 is heated and raised to 125 ° C. (exit temperature of the heater H2) by the heater H2. By supplying the high-temperature IPA vapor to the periphery of the substrate W in the casing 560, the IPA vapor is easily condensed on the surface of the substrate W and replaced with water, and the temperature of the substrate W itself is increased.
[0046]
When the supply of the IPA vapor water surface of the substrate W is replaced with the IPA, by closing the three-way valve V2 stops the supply of the IPA vapor from the IPA · _{N 2} supply unit 565, _{N 2} supplied by opening the valve V1 Situated in drying position DR than part 566 toward the vicinity of the substrate guide 563c of the lifter 563 to supply N _2, blowing off the pure water remaining in the holding groove. In this case, _{N 2} is heated and raised to the 125 ° C. by the heater H1. At the same time, the pure water in the processing tank 562 is discharged from the pipe 562d.
[0047]
Then, by operating the three-way valve V2, connecting piping 60a to the pipe 565c, supply only _{N 2} from IPA · _{N 2} supply unit 565, filling the casing 560 in a nitrogen atmosphere. Also at this time, the supplied N ₂ is heated and heated to 125 ° C. by the heater H ₂ . By N ₂ supplied to the casing 560 by the heater H1 and the heater H2 is being heated, so that the state in which the temperature is increased of the substrate W can be maintained.
[0048]
After that, the valve V3 is opened, the atmosphere in the casing 560 is exhausted through the pipe 560b by the pipe 560b, and the pressure in the casing 560 sealed by the shutter 561 is reduced. Thereby, the IPA condensed on the substrate W is completely dried.
[0049]
At this time, as described above, the temperature decreases due to the decrease in the gas internal energy due to the pressure reduction. However, since the temperature of the substrate W is increased before the pressure reduction, the substrate W is present in the casing 560 during the pressure reduction. The temperature of the substrate W does not drop below the dew point of the water vapor or the IPA vapor. Therefore, water or IPA does not condense on the surface of the substrate W, and generation of particles due to drying of the condensed droplets can be prevented.
[0050]
Finally, the shutter 561 is opened to release to the atmosphere, and the lifter 563 is raised to the transfer position TP to take out the substrate W out of the casing 560, thereby completing a series of substrate processing.
[0051]
<D. Modification>
The embodiments of the present invention have been described above, but the present invention is not limited to the above examples. For example, in the multifunctional processing section 56 in the above embodiment, IPA was used as an organic solvent and N ₂ was used as an inert gas. However, the present invention is not limited to this, and other organic solvents such as ethanol and methanol may be used as organic solvents. Other inert gases such as helium gas and argon gas may be used as the gas.
[0052]
In the embodiment described above, increasing the temperature of the substrate W before vacuum by heating and raising the temperature of IPA vapor and N ₂ is supplied into the casing 560, had been preventing condensation in vacuo, the The invention is not limited to this approach. That is, any form may be used as long as the temperature of the substrate W during the reduced-pressure drying process can be higher than both the dew point of the steam present in the casing 560 at that time and the dew point of the IPA vapor. Specifically, for example, a multi-function processing unit 56 as shown in FIG. 5 may be used.
[0053]
FIG. 5 is a front sectional view showing another example of the multi-function processing unit 56. This multi-function processing unit 56 differs from the multi-function processing unit 56 of the above-described embodiment in FIG. 2 in that an infrared heater IR is provided on the inner wall of the casing 560. The infrared heater IR can irradiate infrared rays to the substrate W located at the drying position DR to heat and raise the temperature of the substrate W. Then, the infrared heater IR heats the substrate W during drying under reduced pressure, and if the temperature of the substrate W is higher than both the dew point of water vapor and the dew point of IPA vapor existing in the casing 560 under reduced pressure, the surface of the substrate W No condensation of water or IPA occurs, and the same effect as in the above embodiment can be obtained.
[0054]
Upwards Further, provided in a state where the supply port IO laterally toward above the lower position than the upper end of the processing tank 562 multifunction processor 56 in IPA · N ₂ supply unit 565 in the above embodiment, thereby the IPA vapor However, the present invention is not limited to this, and the installation position and the steam supply direction can be arbitrarily determined as long as the supply unit can supply the IPA steam into the casing 560. For example, it provided the IPA · _{N 2} supply unit 565 above the upper end of the processing tank 562 may further be provided with its feed opening IO obliquely upwardly. Further, IPA vapor may be supplied from the N ₂ supply unit 566.
[0055]
Further, in the above embodiment, the substrate W is exposed by lifting the substrate W from the pure water stored in the processing tank 562 by the lifter 563. May be realized.
[0056]
【The invention's effect】
As described above, according to the first and third aspects of the present invention, the temperature of the substrate, which decreases when the drying process is performed under reduced pressure, is one of the dew point of the water in the processing chamber and the dew point of the organic solvent at that time. Since the vapor of the heated organic solvent is supplied to the substrate so that it becomes higher than any of the higher temperatures, water or the organic solvent does not condense on the surface of the substrate during the drying process, and as a result, the condensed droplets Particles can be prevented from adhering due to drying.
[0057]
According to the second and fourth aspects of the present invention , the heated inert gas is further supplied into the processing chamber after the vapor of the organic solvent is supplied and before the pressure in the processing chamber is reduced. In addition, dew condensation on the substrate surface during the drying process can be more effectively prevented.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an overall configuration of a substrate processing apparatus according to the present invention.
FIG. 2 is a front sectional view of a multifunctional processing unit of the substrate processing apparatus of FIG. 1;
FIG. 3 is a side sectional view of a multifunctional processing unit of the substrate processing apparatus of FIG. 1;
FIG. 4 is a schematic view showing a mechanism for supplying and discharging gas to and from a multifunctional processing unit.
FIG. 5 is a front sectional view showing another example of the multi-function processing unit.
FIG. 6 is a diagram showing a saturated vapor pressure curve.
[Explanation of symbols]
1 substrate processing apparatus 56 multifunctional processing unit 560 casing 562 processing tank 565 IPA · _{N 2} supply unit 566 _{N 2} supply unit IR Infrared heaters H1, H2 heater W substrate

Claims (4)

Substrate processing for supplying a vapor of an organic solvent to a substrate that has been subjected to a cleaning process with pure water to replace the pure water attached to the substrate with the organic solvent, and then drying the substrate by reducing the pressure. A device,
A treatment tank for performing the cleaning treatment,
A processing chamber that houses the processing tank and performs the drying process;
Organic solvent vapor heating means for heating the vapor of the organic solvent,
By supplying the vapor of the organic solvent heated by the organic solvent vapor heating means into the processing chamber, the temperature of the substrate, which is reduced by the reduced pressure state during the drying process, is reduced by the water in the processing chamber at that time. Organic solvent vapor supply means to raise the dew point and the dew point of the organic solvent higher than any higher temperature,
Decompression means for decompressing the processing chamber after the heated vapor of the organic solvent is supplied,
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
Inert gas heating means for heating the inert gas,
An inert gas supply unit that supplies an inert gas heated by the inert gas heating unit into the processing chamber after the heated vapor of the organic solvent is supplied and before the pressure in the processing chamber is reduced. When,
A substrate processing apparatus, further comprising: A substrate processing method for performing a drying process in a processing chamber on a substrate after the cleaning process with pure water,
An organic solvent vapor heating step of heating the vapor of the organic solvent,
An organic solvent vapor that supplies the vapor of the organic solvent heated after the completion of the cleaning process with pure water into the processing chamber to replace the pure water attached to the substrate with the organic solvent, and raises the temperature of the substrate. Supply process,
A pressure reducing step of reducing the pressure in the processing chamber after the heated vapor of the organic solvent is supplied,
With
The As temperature of the substrate decreases have you to depressurization step is higher than either higher temperature among the dew point of the treatment chamber of the water and the dew point of the organic solvent at that time, in the organic solvent vapor heating step A substrate processing method, wherein the vapor of the organic solvent is heated. The substrate processing method according to claim 3,
An inert gas heating step of heating the inert gas,
An inert gas supply step of supplying a heated inert gas into the processing chamber after the heated vapor of the organic solvent is supplied and before the pressure in the processing chamber is reduced.
A substrate processing method, further comprising:

Images