JP3624857B2 - Mounting structure of semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device mounting structure in which a semiconductor device such as a semiconductor chip is mounted on a substrate.
[0002]
[Prior art]
Mounting of a semiconductor device such as a semiconductor chip on a substrate is generally performed by joining metal bumps, which are protruding electrodes formed on the semiconductor chip, to terminal electrodes formed on the substrate. In joining the electrodes to each other, it is necessary to conduct all of the many electrodes satisfactorily. In general, the height dimensions and shapes of metal bumps and terminal electrodes are not necessarily uniform, and there may be cases where the electrodes are not completely in contact with each other due to variations in height, irregularities on the electrode surface, and the like. For this reason, when the semiconductor device is mounted, the semiconductor device is pressed against the substrate, and the higher electrodes among the electrodes with varying heights are crushed to obtain a uniform contact state.
[0003]
[Problems to be solved by the invention]
However, in conventional semiconductor device mounting, in order to obtain a uniform contact state, the electrode itself needs to be plastically deformed in the height direction, and thus a high pressing load is required during mounting. When the pressing load is not sufficient, there is a problem in that poor contact occurs partially and good conduction cannot be obtained, resulting in poor mounting.
[0004]
In view of the above, an object of the present invention is to provide a semiconductor device mounting structure capable of realizing a good conduction state with a low pressing load.
[0005]
[Means for Solving the Problems]
The mounting structure of a semiconductor device according to claim 1 is a mounting structure of a semiconductor device for mounting on a substrate a semiconductor device having an electrode having a protruding portion formed on a surface thereof, wherein the protruding portion of the electrode and the electrode has the protruding portion. The width dimension is larger than the width dimension of the terminal electrode formed on the substrate, and in a state where the electrode is pressed against the terminal electrode and joined, a part of the protruding portion comes into contact with the upper surface of the terminal electrode and is crushed. It is.
[0006]
The mounting structure of the semiconductor device according to claim 2 is the mounting structure of the semiconductor device according to claim 1, wherein the electrode is a plating bump formed on the semiconductor device by plating, and the protrusion is formed of the plating bump. It is a protrusion at the edge.
[0007]
According to the present invention, the width dimension of the electrode and the protrusion of the semiconductor device is set larger than the width dimension of the terminal electrode formed on the substrate, and when the electrode is pressed against the terminal electrode, only the protrusion is the terminal electrode. By contacting and crushing the upper surface, good conduction can be secured with a low pressing load.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings. 1A is a side view of a semiconductor device according to an embodiment of the present invention, FIG. 1B is a side view of an electrode of the semiconductor device according to an embodiment of the present invention, and FIG. 2 is a bottom perspective view of an electrode of a semiconductor device according to an embodiment, FIG. 2 is a process explanatory diagram of a semiconductor device mounting method according to an embodiment of the present invention, and FIG. 3A is an embodiment of the present invention. FIG. 3B is a cross-sectional view of the mounting structure according to the embodiment of the present invention, and FIG. 4A is a perspective view of the electrode of the semiconductor device according to the embodiment of the present invention. 4B is a perspective view of the mounting structure of the semiconductor device according to the embodiment of the present invention, and FIG. 4C is a cross-sectional view of the mounting structure of the embodiment of the present invention.
[0009]
First, the semiconductor device 1 will be described with reference to FIG. In FIG. 1A, the electrode 2 is formed on the lower surface of the semiconductor device 1. The electrode 2 is formed by plating. As shown in FIGS. 1B and 1C, the electrode 2 has a protrusion 2b (long side direction) protruding from the surface 2a along the edge, 2c (short side direction) is formed. The protrusions 2b and 2c are generated when the plating material is unevenly attached to the edge in the plating process. As the material of the protrusions 2b and 2c, a metal such as gold or solder, an alloy, or the like is used.
[0010]
Next, the mounting of the semiconductor device 1 on the substrate 3 will be described with reference to FIG. In FIG. 2A, a terminal electrode 4 is formed on the upper surface of the substrate 3. The terminal electrode 4 has an elongated shape (see FIG. 3A), and the width dimension d is set smaller than the width dimension (dimension in the short side direction) D of the electrode 2 (see FIG. 3A). Has been. A resin adhesive 5 is applied to the semiconductor device mounting position on the upper surface of the substrate 3. The method for supplying the resin adhesive 5 to the upper surface of the substrate 3 may be a method for applying a sheet-like adhesive in addition to the method for applying the paste-like resin adhesive 5.
[0011]
Next, as shown in FIG. 2B, the semiconductor device 1 is held by the mounting head 6 and aligned with the mounting position of the substrate 3. Next, as shown in FIG. 2C, the semiconductor device 1 is pressed against the substrate 3 by the mounting head 6. As a result, the electrode 2 is pressed against the terminal electrode 4, and the protrusion 2c in the short side direction is crushed by the pressing force among the protrusions at the edge of the electrode 2 as shown in FIG.
[0012]
At this time, the contact state between the electrode 2 and the terminal electrode 4 varies depending on each electrode, but all the electrodes 2 are electrically connected to the terminal electrode 4 satisfactorily by the protrusion 2c being crushed. Further, the pressing load F shown in FIG. 2 (c) may be a pressing load that only crushes only the protrusion 2c, and thus is smaller than the pressing load necessary to crush the entire electrode. Therefore, the semiconductor device 1 can be prevented from being damaged by being pressed with an excessive pressing load during mounting. After that, by heating the semiconductor device 1 in a state where the pressure is held, the resin adhesive 5 is thermoset, and the mounting structure of the semiconductor device 1 in which the electrode 2 is electrically connected to the terminal electrode 4 is completed.
[0013]
FIG. 3B shows an AA cross section of this mounting structure. In a state where the semiconductor device 1 is bonded by the resin adhesive 5, the protrusion 2 c is partially crushed, and thereby the displacement of the electrode 2 in the width direction (arrow a direction) with respect to the terminal electrode 4 is restrained. Therefore, it is possible to effectively restrain the lateral displacement generated in the joint due to the thermal stress after mounting, and to increase the mounting strength.
[0014]
In addition to the electrode 2 formed by the above-described solder plating, as shown in FIG. 4A, an electrode 7 provided with a protrusion 7a continuous in the short side direction at the center of the joint surface 7b with the terminal electrode 4 is provided. May be used. At this time, the width dimension D ′ of the electrode 7 and the protrusion 7 a is made larger than the width dimension d of the terminal electrode 4 in the same manner as the electrode 2 described above. Even when the semiconductor device 1 ′ having such an electrode 7 is mounted on the substrate 3 having the terminal electrode 4 formed thereon, as shown in FIGS. Is partially crushed by. Thereby, as shown in FIG. 4C (cross section BB), the displacement in the width direction (arrow b direction) of the electrode 7 is constrained, and the mounting strength can be increased as in the example shown in FIG. it can.
[0015]
Moreover, in the said embodiment, although the example which joins the semiconductor device 1 to the board | substrate 3 using the resin adhesive material 5 is shown, other joining methods, for example, the terminal electrode 4 is precoated with solder and the electrode 2 is used. Various joining methods can be applied, such as a solder joining method and a method in which the surfaces of the electrode 2 and the terminal electrode 4 are directly joined to each other by a method such as diffusion joining.
[0016]
【The invention's effect】
According to the present invention, the width dimension of the electrode and the protrusion of the semiconductor device is set larger than the width dimension of the terminal electrode formed on the substrate, and when the electrode is pressed against the terminal electrode, only the protrusion is the terminal electrode. By contacting and crushing the upper surface, good conduction can be secured with a low pressing load.
[Brief description of the drawings]
1A is a side view of a semiconductor device according to an embodiment of the present invention, FIG. 1B is a side view of an electrode of a semiconductor device according to an embodiment of the present invention, and FIG. 1C is a semiconductor according to an embodiment of the present invention. FIG. 2 is a bottom perspective view of an electrode of the device. FIG. 2 is a process explanatory diagram of a semiconductor device mounting method according to an embodiment of the invention. FIG. 3A is a perspective view of a mounting structure of a semiconductor device according to an embodiment of the invention. FIG. 4B is a cross-sectional view of a mounting structure according to an embodiment of the present invention. FIG. 4A is a perspective view of an electrode of a semiconductor device according to an embodiment of the present invention. Perspective view of mounting structure of semiconductor device (c) Cross-sectional view of mounting structure of one embodiment of the present invention
DESCRIPTION OF SYMBOLS 1 Semiconductor device 2, 7 Electrode 2b, 2c Projection 3 Substrate 4 Terminal electrode 5 Resin adhesive

Claims (2)

A mounting structure of a semiconductor device for mounting on a substrate a semiconductor device having an electrode having a protruding portion on the surface, wherein the width dimension of the protruding portion of the electrode and the electrode is that of a terminal electrode formed on the substrate A mounting of a semiconductor device characterized in that a part of the protrusion is pressed against an upper surface of the terminal electrode when the electrode is larger than a width dimension and pressed and joined to the terminal electrode. Construction. 2. The mounting structure of a semiconductor device according to claim 1, wherein the electrode is a plating bump formed on the semiconductor device by plating, and the protrusion is a protrusion at an edge of the plating bump.

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