JP3640290B2 - Positive photoresist coating liquid and display element substrate using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention is capable of forming a coating film with a uniform film thickness over the entire substrate, does not generate particles, and has excellent storage stability, and a non-chemically amplified positive photoresist coating solution and a coating solution using the coating solution The present invention relates to a display element base material provided with a coating film having excellent in-plane uniformity.
[0002]
[Prior art]
Conventionally, it is known to use a non-chemically amplified positive photoresist containing an alkali-soluble resin and a quinonediazide group-containing compound in the production of semiconductor elements, liquid crystal elements, and the like.
Such a photoresist is usually used in a form dissolved in an organic solvent. As the organic solvent, ethyl cellosolve acetate has been regarded as preferable so far.
However, in recent years, the safety of resist solvents has become a problem, and instead of ethyl cellosolve acetate which has been used so far, as a more safe solvent, for example, propylene glycol monomethyl ether acetate (Japanese Patent Laid-Open No. Sho 61). No. -7837), monooxymonocarboxylic acid esters (Japanese Patent Laid-Open No. Sho 62-123444) and the like have been proposed.
[0003]
However, when these solvents are used alone, they are insufficiently soluble in the quinonediazide group-containing compound that is a photosensitizer, so that particles are generated during storage as a coating solution, and the uniformity of the coating film and the substrate There is a drawback of poor adhesion. In order to improve these disadvantages, it has been proposed to use a mixture with butyl acetate, 2-heptanone or the like (Japanese Patent Laid-Open Nos. 5-34918, 6-67420, and 6-317901). JP, 7-56333, A, etc.).
On the other hand, it is also known to use γ-butyrolactone mixed with methyl lactate or 2-heptanone (Japanese Patent Laid-Open Nos. 4-362645 and 5-34919).
[0004]
By the way, the recent increase in size of substrates used for semiconductor devices and liquid crystal devices makes it difficult to form a coating film with a uniform film thickness over the entire substrate, and as a result, resist pattern dimensions faithful to the mask pattern cannot be obtained. The problem has arisen.
Also, once the particles are deposited, the mass production line for device manufacturing must be stopped. Therefore, a resist coating solution that does not generate particles and has excellent storage stability is desirable. Solvents that have been known so far can meet this demand. Thus, there has been a strong demand for the appearance of a resist coating solution that is more excellent in storage stability.
[0005]
The solvent for a chemically amplified resist, methyl 3-methoxypropionate or is a mixed solvent of propylene glycol monomethyl ether acetate and γ- butyrolactone is known (JP-A-10-133377), that a resin component Do different When this was used for a non-chemically amplified resist, it was completely unpredictable to form a stable solution over a long period of time.
[0006]
[Problems to be solved by the invention]
The present invention provides a non-chemically amplified positive photoresist coating solution that is capable of forming a coating film with a uniform film thickness over the entire substrate, is free of particles, and has excellent storage stability. It is made for the purpose of providing the base material for display elements in which the coating film excellent in in-plane uniformity was formed using.
[0007]
[Means for Solving the Problems]
As a result of intensive research to develop a non-chemically amplified positive photoresist coating solution having good coating properties and storage stability, the present inventors have used a mixed solvent having a specific composition as a solvent. The inventors have found that the above object can be achieved, and have completed the present invention based on this finding.
[0008]
That is, the present invention provides (A) an alkali-soluble resin and (B) a quinonediazide group-containing compound in (C) an organic solvent, a non-chemically amplified positive photoresist coating solution, positive photoresist coating liquid, which comprises using a mixed solvent of propylene glycol monomethyl ether acetate tape preparative 60-98 wt% and γ- butyrolactone 40-2 wt%, and, a coating of the positive photoresist coating liquid The present invention provides a display element base material formed on a glass square substrate.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
The positive photoresist coating solution of the present invention is of a non-chemical amplification type, and the alkali-soluble resin as component (A) has been used as an alkali-soluble resin in conventional non-chemical amplification type positive photoresists. Any of these can be selected and used as appropriate. As such, for example, novolak resins obtained by producing phenols such as m-cresol, p-cresol, xylenol, trimethylphenol and the like with formaldehyde or a mixed aldehyde of salicylaldehyde with an acid catalyst in a conventional manner and so on.
In particular, a cresol novolak resin obtained by condensing m-cresol and p-cresol with formaldehyde is preferable when used for a positive photoresist for liquid crystal, in which a glass square substrate is used as the substrate. .
These alkali-soluble resins may be used alone or in combination of two or more.
[0010]
On the other hand, as the quinonediazide group-containing compound as the component (B) in the positive photoresist coating solution of the present invention, among the compounds having a quinonediazide group conventionally used as a photosensitive component in non-chemically amplified positive resists. Any one can be appropriately selected and used. Examples of the quinonediazide group-containing compound include naphthoquinone-1,2-diazide-4-sulfonyl halide or naphthoquinone-1,2-diazide-5-sulfonyl halide, 2,3,4-trihydroxybenzophenone, 2,3, Polyhydroxybenzophenones such as 4,4'-tetrahydroxybenzophenone, or bis (4-hydroxy-3,5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl)- 2-hydroxyphenylmethane, bis (4-hydroxy-2,3,5-trimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2,3,5-trimethylphenyl) -3-hydroxyphenylmethane, Bis (4-hydroxy-2,3,5-to Methylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-2-methyl-5-cyclohexylphenyl) -3,4-hydroxyphenylmethane, bis (4-hydroxy-2-methyl-5-cyclohexylphenyl)- Trisphenols such as 4-hydroxyphenylmethane, 1- [1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene, triethylamine and triethanolamine In the presence of an amine catalyst such as the above, a condensation reaction in an organic solvent such as dioxane or γ-butyrolactone and complete esterification or partial esterification can be used.
[0011]
In particular, an ester obtained by reacting naphthoquinone-1,2-diazide 4 or 5-sulfonic acid chloride in a ratio of 2 to 4 moles per mole of 2,3,4,4′-tetrahydroxybenzophenone is Although the image characteristics and patterning characteristics of the pattern shape are very excellent and preferable, on the other hand, the solubility in conventional solvents was poor and it was the cause of particle generation, so it was inevitable that the application field was limited, According to the present invention, the problem of storage stability is solved, and thus a coating film having good patterning characteristics can be provided over a wide range.
[0012]
In this invention, this quinonediazide group containing compound of (B) component may be used 1 type, and may be used in combination of 2 or more type. Moreover, about the compounding quantity, it is preferable to use in the ratio of 10-40 weight part with respect to 100 weight part of alkali-soluble resin of the said (A) component. If this amount is less than 10 parts by weight, it is difficult to obtain a resist pattern having a practical shape, and if it exceeds 40 parts by weight, the sensitivity tends to decrease. In view of the shape and sensitivity of the resist pattern, the particularly preferred amount of the quinonediazide group-containing compound is in the range of 15 to 30 parts by weight with respect to 100 parts by weight of the alkali-soluble resin.
[0013]
In positive photoresist coating liquid of the present invention, (C) as a solvent component, (b) propylene glycol monomethyl ether acetate tape preparative 60-98 wt% and (b) .gamma.-butyrolactone 40-2% by weight mixed solvent of Must be used. When the amount of the component (b) is less than 2% by weight, the effect of storage stability is not sufficiently exerted, and when it exceeds 40% by weight, since this γ-butyrolactone has a high boiling point, the heat resistance of the resist pattern, This causes a decrease in the adhesion between the resist pattern and the substrate, the resist pattern shape, and the remaining film rate. Considering the storage stability, the heat resistance of the resist pattern, the adhesion between the substrates, the shape, the remaining film ratio, etc., the preferred mixing ratio of the component (a) and the component (b) is as follows. The component (b) is 30 to 5% by weight.
[0014]
Although there is no restriction | limiting in particular about the usage-amount of the solvent in this invention coating liquid, Usually, it uses so that solid content concentration may be in the range of 10 to 50 weight%, Preferably it is 20 to 30 weight%.
In the coating solution of the present invention, if necessary, a fluorine-based or silicon-based surfactant can be contained as the component (D).
[0015]
Although silicon wafers used for semiconductor element manufacturing currently use 8-inch substrates, they will be shifted to 12-inch substrates in the future. Further, the glass square substrate used for manufacturing the liquid crystal element is further increased in size from 360 mm × 460 mm to 550 mm × 650 mm, and further to 600 mm × 720 mm.
In such a large substrate, in order to further improve the in-plane uniformity of the resist coating film, a fluorine-based, silicon-based or fluorine-silicon-based surfactant is preferably added to the solid content of the coating solution. It is advantageous to contain it in a proportion of 0.01 to 0.5% by weight, more preferably 0.02 to 0.4% by weight.
[0016]
When such a surfactant is added to a conventionally used solvent such as propylene glycol monomethyl ether acetate, the in-plane uniformity of the resist coating on the substrate is improved, but by interaction with the photosensitive agent, Particles are more likely to be generated.
On the other hand, when the surfactant is contained in the coating solution of the present invention using the solvent of the component (C), the in-plane uniformity of the resist coating film is improved without causing the generation of particles. This is convenient.
[0017]
There is no restriction | limiting in particular as a fluorine-type surfactant, A conventionally well-known thing can be used. Examples of this fluorosurfactant include a nonionic fluorocarbon on a straight chain having a fluorinated alkyl group or a perfluoroalkyl group such as the trade names Florard FC-430 and FC-431 (manufactured by Sumitomo 3M). Surfactant is mentioned.
[0018]
There is no restriction | limiting in particular as a silicon type surfactant, A conventionally well-known thing can be used. Examples of this silicon-based surfactant include alkylsiloxane groups, ethyleneoxy groups, and propylene such as the trade name SI-10 series (manufactured by Takemoto Yushi Co., Ltd.) and MegaFuck Paintad 31 (manufactured by Dainippon Ink & Chemicals, Inc.). Nonionic silicon-based surfactant with oxy group bonded, perfluoroalkyl ester group bonded to alkylsiloxane group, ethyleneoxy group and propyleneoxy group such as trade name X-70-090 (manufactured by Shin-Etsu Chemical Co., Ltd.) And nonionic fluorine-containing silicon-based surfactants.
[0019]
These surfactants may be used alone or in combination of two or more.
[0020]
In the positive photoresist coating solution of the present invention, a low weight average molecular weight of about 200 to 600, such as trisphenol, which is an ester compound used as a raw material of the component (B), is used as a sensitivity improver, if necessary. A molecular weight phenol or the like may be used as an adhesion improver, a hydroxyalkyl nitrogen-containing heterocyclic compound such as 2-hydroxyethylpyridine, or an antihalation agent capable of absorbing irradiation radiation.
[0021]
Furthermore, if necessary, compatible additives such as additional resins, plasticizers, stabilizers for improving the performance of the resist film, or patterns obtained by development are made more visible. Conventional components such as colorants and contrast improvers can be added.
[0022]
The present invention also provides a substrate for a display element in which a coating film of the positive photoresist coating solution thus obtained is formed on a glass square substrate. This base material for a display element is suitably used for a glass square substrate of the above-mentioned 360 mm × 460 mm, 550 mm × 650 mm, 600 mm × 720 mm or more, particularly a glass square substrate for producing a liquid crystal element.
[0023]
【The invention's effect】
The positive photoresist coating solution of the present invention is of a non-chemical amplification type using a highly safe solvent, can form a coating film with a uniform film thickness over the entire substrate, and has no generation of particles. Excellent storage stability.
[0024]
【Example】
EXAMPLES Next, although an Example demonstrates this invention further in detail, this invention is not limited at all by these examples.
Various physical properties of the obtained positive photoresist coating solution were evaluated by the following methods.
[0025]
(1) In-plane uniformity The prepared positive photoresist coating solution is spinner-coated on a 360 mm × 460 mm glass square substrate on which a Cr film is formed to a film thickness of 1.5 μm, and then the temperature of the hot plate is set to 130. First drying was performed for 60 seconds at an interval of about 1 mm, and then a second drying was performed on a hot plate at 110 ° C. for 60 seconds to obtain a coating film.
The board | substrate with which this coating film was formed was observed visually, and the case where the coating film was uniformly formed in the whole substrate surface was set as (circle), and the case where there was uneven coating unevenness was set as x.
(2) Storage stability The prepared positive photoresist coating solution was stored in a brown bottle sealed at 30 ° C. for 1 month, and the number of 0.3 μm particles generated was examined.
(3) Patterning characteristics The prepared positive photoresist coating solution is spinner-coated on the glass substrate so as to have a film thickness of 1.5 μm, and then subjected to the first and second drying in (1) to form a test mask. Exposure was performed using a contact exposure apparatus MPA-600FA (manufactured by Canon Inc.) through the pattern.
Next, a resist pattern was formed by paddle development for 65 seconds with a 2.38 wt% tetramethylammonium hydroxide aqueous solution, and the resolution and the resist pattern shape were determined.
[0026]
Example 1
m-cresol and p-cresol were mixed at a weight ratio of 60:40, formalin was added thereto, and condensed by an ordinary method using an oxalic acid catalyst to produce a cresol novolak resin having a weight average molecular weight of 10,000. .
100 parts by weight of this cresol novolac resin, 27 parts by weight of an esterification reaction product of 1 mol of 2,3,4,4'-tetrahydroxybenzophenone and 2.3 mol of naphthoquinone-1,2-diazido-5-sulfonyl chloride Surfactant “FC-430” 0.3 parts by weight, propylene glycol monomethyl ether acetate (hereinafter abbreviated as PGMEA) 324 parts by weight and γ-butyrolactone (hereinafter abbreviated as γ-B) 36 parts by weight (weight ratio 9: 1) And a positive photoresist coating solution was prepared by filtration using a membrane filter having a pore size of 0.2 μm.
Table 1 shows the physical properties of this coating solution.
[0027]
Example 2
A positive photoresist coating solution was prepared in the same manner as in Example 1 except that the surfactant “Megafac Paintad 31” was used instead of the surfactant “FC-430” in Example 1. Table 1 shows the physical properties of this coating solution.
[0028]
Example 3
A positive photoresist coating solution was prepared in the same manner as in Example 1 except that the surfactant “X-70-090” was used instead of the surfactant “FC-430” in Example 1. Table 1 shows the physical properties of this coating solution.
[0029]
Example 4
In the same manner as in Example 3, except that a mixed solvent of PGMEA / γ-B (weight ratio 8: 2) was used instead of PGMEA / γ-B (weight ratio 9: 1) in Example 3, a positive type was used. A photoresist coating solution was prepared. Table 1 shows the physical properties of this coating solution .
[0030]
Comparative Examples 1-3
The mixed solvent in Example 3 was PGMEA alone, a mixed solvent of PGMEA / γ-B (weight ratio 5: 5), or a mixed solvent of 2-heptanone (hereinafter abbreviated to HP) and γ-B (weight ratio 9: 1). A positive photoresist coating solution was prepared in the same manner as in Example 3 except that the above was changed. Table 1 shows the physical properties of these coating solutions.
[0031]
[Table 1]

Claims (4)

In a non-chemically amplified positive photoresist coating solution obtained by dissolving (A) an alkali-soluble resin and (B) a quinonediazide group-containing compound in (C) an organic solvent, propylene glycol monomethyl ether acetate as component (C) A positive photoresist coating solution characterized by using a mixed solvent of 60 to 98% by weight of γ-butyrolactone and 40 to 2% by weight of γ-butyrolactone.   2. The positive photoresist coating solution according to claim 1, wherein the component (B) is an ester of 1 mol of 2,3,4,4′-tetrahydroxybenzophenone and 2 to 4 mol of naphthoquinone-1,2-diazidesulfonic acid.   The positive photoresist coating solution according to claim 1 or 2, comprising 0.01 to 0.5% by weight of a fluorine-based or silicon-based surfactant as a component (D) based on the solid content weight.   A base material for a display element, wherein a coating film of the positive photoresist coating solution according to any one of claims 1 to 3 is formed on a glass square substrate.