JP3640716B2 - Inorganic material in which CdS ultrafine crystals are present, method for producing the same, and photoelectrochemical device using the same - Google Patents
Inorganic material in which CdS ultrafine crystals are present, method for producing the same, and photoelectrochemical device using the same Download PDFInfo
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- 229910010272 inorganic material Inorganic materials 0.000 title claims description 39
- 239000011147 inorganic material Substances 0.000 title claims description 39
- 239000013078 crystal Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000011148 porous material Substances 0.000 claims description 33
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 15
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 15
- ZOGWUHADSPTOEI-UHFFFAOYSA-L cadmium(2+);dicarbamodithioate Chemical compound [Cd+2].NC([S-])=S.NC([S-])=S ZOGWUHADSPTOEI-UHFFFAOYSA-L 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000862 absorption spectrum Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- UDWCKMMKPOGURO-UHFFFAOYSA-N 1,2-dihydropyrazolo[3,4-b]pyridin-4-one Chemical compound O=C1C=CNC2=C1C=NN2 UDWCKMMKPOGURO-UHFFFAOYSA-N 0.000 description 5
- 238000002189 fluorescence spectrum Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 238000004453 electron probe microanalysis Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001720 action spectrum Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- -1 CdI 2 Chemical class 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000001661 cadmium Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- GKXDJYKZFZVASJ-UHFFFAOYSA-M tetrapropylazanium;iodide Chemical compound [I-].CCC[N+](CCC)(CCC)CCC GKXDJYKZFZVASJ-UHFFFAOYSA-M 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/133—Renewable energy sources, e.g. sunlight
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- Hybrid Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Photovoltaic Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Description
【０００１】
【産業上の利用分野】
本発明は、無機材料が有する細孔内にＣｄＳ超微結晶を存在させてなる無機材料およびその製造方法ならびにそれを用いた光電気化学素子に関する。
【０００２】
【従来の技術】
ＣｄＳ超微結晶は、光学的および光電気化学的特性において興味が持たれている。ＣｄＳ超微結晶の作製方法としては種々の方法が知られており、たとえば、ＣｄＩ2 、ＣｄＣｌ2 、ＣｄＳＯ4 、Ｃｄ（ＣＨ3 ＣＯＯ）2 、Ｃｄ（ＮＯ3 ）2 などのカドミウム塩とＳＣ（ＮＨ2 ）2 とＮＨ4 ＯＨとを水溶液中で反応させる方法がある。また、単一原料系として有用な前駆体であるジチオカルバミン酸カドミウム錯体を用いる方法も知られている（Ｔｒｅｎｄｓ ｉｎ Ｉｎｏｒｇ．Ｃｈｅｍ．２．，７９（１９９１））。
【０００３】
【発明が解決しようとする課題】
前記のＣｄＳ超微結晶を無機材料が有する細孔内に存在させると、光物理的または光電気化学的機能という観点において適用可能性を有するものが得られると期待されている。
【０００４】
【課題を解決するための手段】
そこで、本発明者らは、ジチオカルバミン酸カドミウムの蒸気を用いると、これが、無機材料が有する細孔内に入り込み、次いで、このジチオカルバミン酸カドミウムを熱分解させると、無機材料が有する細孔内にＣｄＳ超微結晶を存在させることができること、しかも、細孔内にＣｄＳ超微結晶が存在してなる前記の無機材料は電極として有用なものであり、それを用いて光電気化学素子を構成することができることなどを見出し、本発明を完成した。
すなわち、本発明は、無機材料が有する細孔内にＣｄＳ超微結晶が存在してなる無機材料を提供することにある。また、本発明は、前記の無機材料を簡便、かつ、効率よく製造する方法を提供することにある。さらに、本発明は、前記の無機材料を電極として用いた光電気化学素子を提供することにある。
【０００５】
本発明は、多孔質酸化チタンが有する細孔内の全部または一部に、ＣｄＳ超微結晶が存在してなる無機材料である。本発明において、ＣｄＳ超微結晶とは、ナノメーターサイズの範囲（１〜１０００ｎｍ）の大きさを有するＣｄＳの結晶を言う。本発明において用いる無機材料は、細孔を有する多孔質のものである。細孔のサイズ（細孔直径）としてはナノメーターサイズの範囲（１〜１０００ｎｍ）が好ましい。ナノメーターサイズの細孔を有する無機材料を用いると、析出するＣｄＳ超微結晶のサイズを小さくすることができるとともに、ＣｄＳ超微結晶との接合面積を広くすることができることから、優れた光物理的または光電気化学的機能を有する材料が得られる。無機材料の材質としては酸化チタンが好ましく用いられる。また、無機材料の形状は粒状、膜状、板状などの形状のものが好ましく用いられる。無機材料の体積に対する細孔の体積の割合は、用途に応じて適宜設定できるが、１０〜９０％程度が適当である。膜状の無機材料を用いる場合には、膜あるいは支持体の面積１ｃｍ２あたり、無機材料の表面積が１０〜１００００ｃｍ２程度のものが適している。本発明の無機材料を製造するには、無機材料が有する細孔内に、ジチオカルバミン酸カドミウムの蒸気を導入し、次いで、熱分解する方法が好ましい。ジチオカルバミン酸カドミウムは、Ｃｄ（Ｓ2 ＣＮＲＲ’）2 （式中、Ｒ、Ｒ’はそれぞれアルキル基またはアリール基を示す。）で表される化合物であって、比較的高い熱安定性を有することが知られており、気化させることが可能である。気化したジチオカルバミン酸カドミウムは、無機材料が有する細孔内奥深くにまで拡散する。拡散したジチオカルバミン酸カドミウムを分解温度以上に加熱するとＣｄＳ超微結晶が析出する。このジチオカルバミン酸カドミウムを用いると単一原料によってＣｄＳ超微結晶を作製することができるため、得られるＣｄＳ超微結晶の組成比の制御性に優れている。たとえば、ジエチルジチオカルバミン酸カドミウムは次のような反応でＣｄＳ超微結晶に分解する。
【化１】
【０００６】
本発明の無機材料は、多孔質酸化チタンが有する細孔内にＣｄＳ超微結晶を存在させていることから、光電気化学的特性に優れており、光電導素子、電子写真材料、太陽電池素子、光電池素子などの光電気化学素子の電極として有用である。
【０００７】
【実施例】
以下に本発明の実施例を示すが、本発明はこれに限定されるものではない。
【０００８】
参考例１
無機材料として、多孔質シリカガラスを用いた。シリカガラスが有する細孔の平均サイズは４ｎｍであり、また、細孔の体積比は３０％である。真空下、ガラス管中に封じたジエチルジチオカルバミン酸カドミウムと多孔質シリカガラスとを３２０℃の温度まで加熱して（３０分間）、多孔質シリカガラスが有する細孔内にジエチルジチオカルバミン酸カドミウムの蒸気を導入し、次いで、熱分解して、シリカガラスの細孔内に、ＣｄＳ超微結晶を析出させてなる無機材料（試料Ａ）を得た。
【０００９】
実施例１
無機材料として、直径２０ｎｍの酸化チタン粒子から作製した多孔質酸化チタン膜（膜厚９μｍ）を用いた。この酸化チタン膜は導電性ＳｎＯ2 をコーティングしたガラス上に固定してある。この支持体の面積１ｃｍ2 あたりの酸化チタン膜の表面積は約１０００ｃｍ2 であった。真空下、ガラス管中に封じたジエチルジチオカルバミン酸カドミウムと多孔質酸化チタン膜とを３２０℃の温度まで加熱して（３０分間）、多孔質酸化チタン膜が有する細孔内にジエチルジチオカルバミン酸カドミウムの蒸気を導入し、次いで、熱分解して、酸化チタン膜の細孔内に、ＣｄＳ超微結晶を析出させてなる本発明の無機材料（試料Ｂ）を得た。
【００１０】
無機材料の細孔内にＣｄＳ超微結晶が析出したことを確認するために、試料のＥＰＭＡ測定（電子線マイクロアナライザーを用いた元素分析）を行った。これにより、試料Ａに存在するＣｄＳ超微結晶のシリカガラス内における深さ方向の分布を示した図が図１である。図１は、ＣｄＳ超微結晶がシリカガラスのナノメーターサイズの細孔内に０から１００μｍの範囲にわたって入った様子を示している。深さ方向５０μｍまでは、ＣｄＳ超微結晶がシリカガラスのナノメーターサイズの細孔内に入っていることがこの図１からわかった。この試料Ａの概念図を図２に示す。
試料Ｂに存在するＣｄＳ超微結晶の多孔質酸化チタン膜内における深さ方向の分布を示した図が図３である。図３は、ＣｄＳ超微結晶が酸化チタン膜のナノメーターサイズの細孔内に入った様子を示している。深さ方向２μｍまでは、ＣｄＳ超微結晶は酸化チタン膜のナノメーターサイズの細孔内全てに入っていると思われる。この試料Ｂの概念図を図４に示す。
【００１１】
次に、試料の紫外および可視部の吸収スペクトルと蛍光スペクトルとを測定した。試料Ａのスペクトルを図５に示す。この図５に示した紫外および可視吸収スペクトルから、吸収端が波長５２０ｎｍにあることがわかる。これは、６ｎｍ以上のサイズのＣｄＳ超微結晶のものに対応している。また、図５の蛍光スペクトルでは、波長５００ｎｍにピークが見られた。この蛍光のエネルギーはＣｄＳのバンドギャップと一致している。このことは、試料Ａに存在するＣｄＳ超微結晶には格子欠陥が少ないことを示唆している。
試料Ｂのスペクトルを図６に示す。この図６に示した紫外および可視吸収スペクトルから、吸収端は波長５２０〜５３０ｎｍと見積もられる。この値は６ｎｍ以上のサイズのＣｄＳ超微結晶の値と一致する。また、図６の蛍光スペクトルでは、波長５００ｎｍにピークが見られた。このことは、試料Ｂ内のＣｄＳ超微結晶には格子欠陥が少ないことを示唆している。
【００１２】
さらに、試料Ｂの光電気化学的特性を測定した。一つの電極として試料Ｂを用い、もう一方の電極にはＰｔを担持した導電ガラスを用いた。この二つの電極間に、０．５Ｍのヨウ化テトラプロピルアンモニウムと０．０５Ｍのヨウ素とをエチレンカーボナートとアセトニトリルとを体積比で８：２に混合した溶媒に溶解させた液を電解液として満たした。この二つの電極間にリード線を取付け、本発明の光電気化学素子（光電気化学電池）を形成した。
この光電気化学素子の、試料Ｂからなる電極に４００〜７００ｎｍの範囲の単色光を照射し、発生する光電流を測定した。これにより求めた入射フォトンに対する発生電子の割合（いわゆる光電流のアクションスペクトル）を図７に示す。図６の光吸収スペクトルと対比すると、ＣｄＳ超微結晶の光吸収に対応して光電流が発生していることがわかる。これにより本発明の素子は光電気化学素子としての性能を有することが確かめられた。
【００１３】
【発明の効果】
本発明は、無機材料が有する細孔内に、ＣｄＳ超微結晶を存在させてなる無機材料であって、存在するＣｄＳが格子欠陥の少ない超微結晶であることから、優れた光物理的または光電気化学的特性を有するものである。
また、本発明は、無機材料の細孔内に、ジチオカルバミン酸カドミウムの蒸気を導入し、次いで、熱分解する無機材料の製造方法であって、ＣｄＳ超微結晶を均一に存在させた所望の無機材料を簡便、かつ、効率よく製造することができる。
さらに、本発明は、前記の無機材料を電極として用いてなる光電気化学素子であって、優れた光電気化学特性を有するものである。
【図面の簡単な説明】
【図１】参考例１の試料ＡについてのＥＰＭＡにより測定したＣｄＳの深さ方向の分布である。
【図２】参考例１の試料Ａの概念図である。
【図３】実施例１の試料ＢについてのＥＰＭＡにより測定したＣｄＳの深さ方向の分布である。
【図４】実施例１の試料Ｂの概念図である。
【図５】参考例１の試料Ａについての紫外および可視部の吸収スペクトルと蛍光スペクトルとの測定チャートである。
【図６】実施例１の試料Ｂについての紫外および可視部の吸収スペクトルと蛍光スペクトルとの測定チャートである。
【図７】実施例１の試料Ｂを電極として用いた光電気化学素子についての光電流のアクションスペクトルを示した図である。[0001]
[Industrial application fields]
The present invention relates to an inorganic material in which CdS ultrafine crystals are present in pores of an inorganic material, a method for producing the same, and a photoelectrochemical device using the same.
[0002]
[Prior art]
CdS ultracrystallites are of interest in optical and photoelectrochemical properties. Various methods are known for producing CdS ultrafine crystals. For example, cadmium salts such as CdI 2 , CdCl 2 , CdSO 4 , Cd (CH 3 COO) 2 , Cd (NO 3 ) 2 and SC ( There is a method of reacting NH 2 ) 2 and NH 4 OH in an aqueous solution. A method using a cadmium dithiocarbamate complex which is a useful precursor as a single raw material system is also known (Trends in Inorg. Chem. 2, 79 (1991)).
[0003]
[Problems to be solved by the invention]
When the CdS ultrafine crystals are present in the pores of the inorganic material, it is expected that a material having applicability in terms of photophysical or photoelectrochemical functions can be obtained.
[0004]
[Means for Solving the Problems]
Therefore, when the present inventors use vapor of cadmium dithiocarbamate, this enters into the pores of the inorganic material, and then thermally decomposes the cadmium dithiocarbamate, so that CdS is contained in the pores of the inorganic material. Ultrafine crystals can be present, and the inorganic material having CdS ultrafine crystals in the pores is useful as an electrode, and a photoelectrochemical element is formed using the inorganic material. The present invention has been completed.
That is, the present invention is to provide an inorganic material in which CdS ultrafine crystals are present in the pores of the inorganic material. Moreover, this invention is providing the method of manufacturing the said inorganic material simply and efficiently. Furthermore, this invention is providing the photoelectrochemical element which used the said inorganic material as an electrode.
[0005]
The present invention is an inorganic material in which CdS ultrafine crystals are present in all or part of pores of porous titanium oxide . In the present invention, the CdS ultrafine crystal refers to a CdS crystal having a size in the nanometer size range (1 to 1000 nm). The inorganic material used in the present invention is a porous material having pores. The pore size (pore diameter) is preferably in the nanometer size range (1 to 1000 nm). When an inorganic material having nanometer-sized pores is used, the size of the precipitated CdS ultrafine crystal can be reduced, and the bonding area with the CdS ultrafine crystal can be widened. A material having a functional or photoelectrochemical function is obtained. As an inorganic material, titanium oxide is preferably used. In addition, the inorganic material preferably has a granular shape, a film shape, a plate shape or the like. The ratio of the volume of the pores to the volume of the inorganic material can be appropriately set according to the use, but about 10 to 90% is appropriate. In the case of using a film-like inorganic material, film or the
[Chemical 1]
[0006]
Since the inorganic material of the present invention has CdS ultrafine crystals present in the pores of porous titanium oxide , it has excellent photoelectrochemical characteristics, and is a photoconductive element, electrophotographic material, solar cell element. It is useful as an electrode of a photoelectrochemical element such as a photovoltaic cell element.
[0007]
【Example】
Examples of the present invention are shown below, but the present invention is not limited thereto.
[0008]
Reference example 1
As the inorganic material, porous silica glass was used. The average size of the pores of the silica glass is 4 nm, and the volume ratio of the pores is 30%. Under vacuum, cadmium diethyldithiocarbamate and porous silica glass sealed in a glass tube are heated to a temperature of 320 ° C. (30 minutes), and vapor of cadmium diethyldithiocarbamate is placed in the pores of the porous silica glass. introduced, then thermally decomposed in the pores of the silica glass was obtained inorganic materials that Do by precipitating CdS ultrafine crystals (sample a).
[0009]
Example 1
As the inorganic material, a porous titanium oxide film (thickness 9 μm) prepared from titanium oxide particles having a diameter of 20 nm was used. This titanium oxide film is fixed on glass coated with conductive SnO 2 . The surface area of the titanium oxide film per 1 cm 2 area of this support was about 1000 cm 2 . Under vacuum, cadmium diethyldithiocarbamate and a porous titanium oxide film sealed in a glass tube are heated to a temperature of 320 ° C. (30 minutes), and the cadmium diethyldithiocarbamate is placed in the pores of the porous titanium oxide film. Steam was introduced and then pyrolyzed to obtain an inorganic material (sample B) of the present invention in which CdS ultrafine crystals were precipitated in the pores of the titanium oxide film.
[0010]
In order to confirm that CdS ultrafine crystals were deposited in the pores of the inorganic material, the sample was subjected to EPMA measurement (elemental analysis using an electron beam microanalyzer). FIG. 1 is a diagram showing the distribution in the depth direction of the CdS ultrafine crystal existing in the sample A in the silica glass. FIG. 1 shows a state in which CdS ultrafine crystals have entered a nanometer-sized pore of silica glass over a range of 0 to 100 μm. It can be seen from FIG. 1 that CdS ultrafine crystals are contained in nanometer-size pores of silica glass up to the depth direction of 50 μm. A conceptual diagram of the sample A is shown in FIG.
FIG. 3 shows a distribution in the depth direction in the porous titanium oxide film of the CdS ultrafine crystal existing in the sample B. FIG. FIG. 3 shows a state in which CdS ultrafine crystals enter nanometer-sized pores of the titanium oxide film. Up to 2 μm in the depth direction, CdS ultrafine crystals are considered to be contained in all the nanometer-sized pores of the titanium oxide film. A conceptual diagram of this sample B is shown in FIG.
[0011]
Next, the absorption spectrum and fluorescence spectrum of the ultraviolet and visible parts of the sample were measured. The spectrum of sample A is shown in FIG. From the ultraviolet and visible absorption spectra shown in FIG. 5, it can be seen that the absorption edge is at a wavelength of 520 nm. This corresponds to a CdS ultrafine crystal having a size of 6 nm or more. In the fluorescence spectrum of FIG. 5, a peak was observed at a wavelength of 500 nm. The energy of this fluorescence coincides with the band gap of CdS. This suggests that the CdS ultrafine crystal existing in Sample A has few lattice defects.
The spectrum of Sample B is shown in FIG. From the ultraviolet and visible absorption spectra shown in FIG. 6, the absorption edge is estimated to have a wavelength of 520 to 530 nm. This value agrees with the value of CdS ultrafine crystals having a size of 6 nm or more. In the fluorescence spectrum of FIG. 6, a peak was observed at a wavelength of 500 nm. This suggests that the CdS ultrafine crystal in Sample B has few lattice defects.
[0012]
Further, the photoelectrochemical characteristics of Sample B were measured. Sample B was used as one electrode, and conductive glass carrying Pt was used as the other electrode. A solution obtained by dissolving 0.5 M tetrapropylammonium iodide and 0.05 M iodine in a solvent in which ethylene carbonate and acetonitrile are mixed at a volume ratio of 8: 2 is used as an electrolytic solution between the two electrodes. Satisfied. A lead wire was attached between the two electrodes to form the photoelectrochemical element (photoelectrochemical cell) of the present invention.
The photoelectrochemical device was irradiated with monochromatic light in the range of 400 to 700 nm on the electrode made of Sample B, and the generated photocurrent was measured. FIG. 7 shows the ratio of generated electrons to so-called incident photons (so-called photocurrent action spectrum). When compared with the light absorption spectrum of FIG. 6, it can be seen that a photocurrent is generated corresponding to the light absorption of the CdS ultrafine crystal. Thereby, it was confirmed that the element of the present invention has performance as a photoelectrochemical element.
[0013]
【The invention's effect】
The present invention is an inorganic material in which CdS ultrafine crystals are present in the pores of the inorganic material, and the CdS present is an ultrafine crystal with few lattice defects. It has photoelectrochemical properties.
The present invention also provides a method for producing an inorganic material in which vapor of cadmium dithiocarbamate is introduced into the pores of the inorganic material and then thermally decomposed, and the desired inorganic material in which CdS ultrafine crystals are uniformly present is provided. The material can be easily and efficiently manufactured.
Furthermore, the present invention is a photoelectrochemical element using the above-mentioned inorganic material as an electrode, and has excellent photoelectrochemical characteristics.
[Brief description of the drawings]
1 is a distribution in the depth direction of CdS measured by EPMA for Sample A of Reference Example 1. FIG.
2 is a conceptual diagram of Sample A of Reference Example 1. FIG.
3 is a distribution in the depth direction of CdS measured by EPMA for Sample B of Example 1. FIG.
4 is a conceptual diagram of a sample B of Example 1. FIG.
5 is a measurement chart of an absorption spectrum and a fluorescence spectrum in the ultraviolet and visible parts for Sample A of Reference Example 1. FIG.
6 is a measurement chart of an absorption spectrum and a fluorescence spectrum in the ultraviolet and visible parts for Sample B of Example 1. FIG.
7 is a diagram showing an action spectrum of a photocurrent for a photoelectrochemical element using the sample B of Example 1 as an electrode. FIG.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28659595A JP3640716B2 (en) | 1995-10-05 | 1995-10-05 | Inorganic material in which CdS ultrafine crystals are present, method for producing the same, and photoelectrochemical device using the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28659595A JP3640716B2 (en) | 1995-10-05 | 1995-10-05 | Inorganic material in which CdS ultrafine crystals are present, method for producing the same, and photoelectrochemical device using the same |
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| JPH09100122A JPH09100122A (en) | 1997-04-15 |
| JP3640716B2 true JP3640716B2 (en) | 2005-04-20 |
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| US8545734B2 (en) * | 2009-08-04 | 2013-10-01 | Precursor Energetics, Inc. | Methods for photovoltaic absorbers with controlled group 13 stoichiometry |
| JP6004528B2 (en) * | 2011-08-29 | 2016-10-12 | 地方独立行政法人東京都立産業技術研究センター | Method for producing porous silica-encapsulated particles and porous silica |
| JP6165937B2 (en) * | 2011-08-29 | 2017-07-19 | 地方独立行政法人東京都立産業技術研究センター | Method for producing porous silica-encapsulated particles |
| TWI502762B (en) * | 2014-12-22 | 2015-10-01 | Ind Tech Res Inst | Method for producing compound solar cell and sulfide single crystal nano particle film |
| US20180244534A1 (en) * | 2015-03-17 | 2018-08-30 | Board Of Regents Of The Nevada System Of Higher Education, On Behalf Of The University Of Nevada, | Chalcogenide materials, chalcogenide-based materials, and methods of making and using the same |
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