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JP3640738B2 - Method for forming amorphous alloy thin film layer and method for attaching magnetic sensor to base material - Google Patents
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JP3640738B2 - Method for forming amorphous alloy thin film layer and method for attaching magnetic sensor to base material - Google Patents

Method for forming amorphous alloy thin film layer and method for attaching magnetic sensor to base material Download PDF

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JP3640738B2
JP3640738B2 JP19399496A JP19399496A JP3640738B2 JP 3640738 B2 JP3640738 B2 JP 3640738B2 JP 19399496 A JP19399496 A JP 19399496A JP 19399496 A JP19399496 A JP 19399496A JP 3640738 B2 JP3640738 B2 JP 3640738B2
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Prior art keywords
amorphous alloy
thin film
film layer
alloy thin
base material
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JP19399496A
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Japanese (ja)
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JPH1018051A (en
Inventor
一実 豊田
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Uchihashi Estec Co Ltd
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Uchihashi Estec Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明はベ−ス材にアモルファス合金薄膜層を形成する方法及びこの方法によりベ−ス材に磁気式センサ、例えば、磁気式非接触トルクセンサを付設する方法に関するものである。
【0002】
【従来の技術】
アモルファス合金はVillari効果を有し、この効果を利用して歪検出、更には捩れトルク⇒歪変換により回転軸に加わる回転トルクを検出することが公知である。
すなわち、直径dの軸に回転トルクTが作用すると、軸表面に式▲1▼で示される剪断応力τが発生し、
τ=16T/(πd3) ▲1▼
また、モ−ルの応力円から明らかなように、剪断方向に対し45°の方向に主応力が発生する。
【0003】
而して、軸表面にアモルファス合金薄膜を固着しておくと、上記の主応力方向に一軸磁気異方性が呈され、その異方性エネルギ−Kuは、飽和磁歪定数をλs、アモルファス合金薄膜の捩じれヤング率をGa、軸の捩じれヤング率をGsとすると、
Ku=48λsGa/(πd3Gs) ▲2▼
で与えられる。
従って、軸に磁界を作用させ、上記アモルファス合金薄膜を通る磁気回路の磁気抵抗から与えられる比導磁率μrの変化からトルクTの検出が可能となる。
【0004】
勿論、外部からの力によって歪を生じるベ−ス材の表面にアモルファス合金薄膜を固着しておくと、その力の方向に一軸磁気異方性が呈されるから、その歪を上記と同様にアモルファス合金薄膜を通る磁気回路の磁気抵抗から与えられる比導磁率μrの変化より測定でき、更には、歪み量と外力との関係を予め把握しておくことにより質量、圧力等のセンサとして使用可能である。
【0005】
【発明が解決しようとする課題】
従来、上記方法によりトルクや歪を検出するには、予め成形したアモルファス合金薄膜を回転軸にエポキシ樹脂等の接着剤で貼着している。
而るに、この貼着時の曲げ歪や薄膜成形時の加工歪のために、ある方向の一軸磁気異方性の付随が避けられず、この付随一軸磁気異方性の異方性エネルギ−Kbが上記トルクに基づく主応力方向の異方性エネルギ−Kuに重畳され、この重畳異方性エネルギ−のトルクに対する変動性が緩やかになり、Kbが高くなるほど検出感度の低下が余儀なくされる。
【0006】
本発明の目的は、ベ−ス材にアモルファス合金薄膜層を固着して、ベ−ス材に発生する歪をアモルファス合金薄膜のVillari効果により検出する場合、検出しようとする歪以外の付随歪の影響を排除して高感度の歪検出を保障できるアモルファス合金薄膜層を形成する方法及びベ−ス材に磁気式センサを付設する方法を提供することにある。
【0007】
【課題を解決するための手段】
本発明に係るアモルファス合金薄膜層の形成方法は、ベ−ス材にアモルファス合金片を接触させ、接触電極による瞬時通電で上記アモルファス合金片を溶融させ、通電遮断後、この溶融金属を電極からの放熱で急冷固化して再度アモルファス化することを特徴とする構成、または、上記アモルファス合金片に代え、未アモルファス合金材料を使用し、接触電極による瞬時通電で未アモルファス合金材料を溶融させ、通電遮断後、この溶融金属を電極からの放熱で急冷固化してアモルファス化することを特徴とする構成であり、何れの構成においても、アモルファス合金がCo70515Si10Fe45の組成の場合、電流の瞬時通電時間は300μs以下とすることが適切である。
本発明に係るベ−ス材に磁気式センサを付設する方法は、ベ−ス材(例えば回転軸)にアモルファス合金薄膜層を磁気式センサ(例えば、磁気式非接触トルクセンサ)として上記アモルファス合金薄膜層の形成方法により設けることを特徴とする構成である。
【0008】
【発明の実施の形態】
以下、図面を参照しつつ本発明の実施の形態について説明する。
本発明を実施するには、まず、図1の(イ)に示すように、ベ−ス金属材1にアモルファス合金片2を接触させ、更に、ベ−ス金属材1及びアモルファス合金片2にそれぞれ電極31,32を加圧接触させる。
次いで、電流を瞬時通電して、図1の(ロ)に示すようにアモルファス合金片を溶融させる。20は溶融金属を示している。
【0009】
この場合、アモルファス合金片2の電気抵抗(ベ−ス金属材1との接触抵抗を含めた電気抵抗)をベ−ス金属材1や電極31,32に較べて充分に高くしてあり、ジュ−ル熱が実質上、アモルファス合金片2(ベ−ス金属材1との接触界面を含む)のみに発生する。また、電流の通電時間を充分に短時間としてあり、上記ジュ−ル熱が発生したアモルファス合金片から、この通電時間内に逃げる熱量は無視できる。従って、アモルファス合金片の熱容量をC、アモルファス合金片の電気抵抗をR、平均電流値をI、通電時間をΔtとすれば、アモルファス合金片の上昇温度ΔTは、ほぼ
ΔT=RI2Δt/C ▲3▼
で与えられ、アモルファス合金片の融点をTm、常温をT0とすれば、通電電流Iは、ほぼ
I=〔C(Tm−T0)/(RΔt)〕1/2 ▲4▼
で与えられる。
【0010】
上記電流値IのΔt時間の通電中、ジュ−ル熱が発生したアモルファス合金片2から電極32やベ−ス金属材1への熱伝達量は実質上零であり、電極32及びベ−ス金属材1(アモルファス合金片との接触界面を除いたベ−ス金属材の大部分)がほぼ常温のままに保持されているから、通電遮断後はアモルファス合金片の熱が急速に電極32及びベ−ス金属材1に逃げて溶融金属20が冷却固化される。
この溶融金属の冷却において、結晶の成長を妨げるように、すなわち、凝集潜熱を奪い、結晶になるための原子の拡散を妨げるように急冷すれば、固化金属を再度アモルファス化でき、ベ−ス金属材表面にアモルファス合金薄膜層を形成できる。
而るに、本発明においては、アモルファス合金片を短時間で通電溶融し、その間、通電発熱量を電極32及びベ−ス金属材1に移動させずに電極及びベ−ス金属材温度をほぼ常温に保持できるから、通電遮断後、溶融金属の熱が電極32及びベ−ス金属材1に急速に移動し溶融金属が急冷されて再度のアモルファス化が保証される。
【0011】
本発明において、アモルファス合金片の合金組成としてはFeやCo等の遷移金属とBやSi等の非金属との合金で非金属量が10〜30原子%の組成系に限定されたもの、例えば、Co70515Si10Fe45(添字は原子%を示す。以下、同じ)やFe75Si1015が、結晶化する臨界冷却速度が比較的遅いので、上記の再アモルファス化上有利である。
【0012】
アモルファス合金片に代え、未アモルファス合金材料、例えば、Co粉末70.5%、B粉末15%、Si粉末10%、Fe粉末4.5%の混合材料、または、Fe粉末75%、Si粉末10%、B粉末15%の混合材料等、溶融・急冷によってアモルファス合金になる混合粉末材料の外、元素箔の積層物も使用できる。
更に通電時間は、300μs以下とされ、通電電流は溶融過剰による蒸発瀑飛を生じない電流値以下とされる。
【0013】
本発明の上記実施の形態では、一方の電極をアモルファス合金片または未アモルファス合金材料に接触させ、他方の電極をベ−ス金属材に接触させてアモルファス合金片または未アモルファス合金材料を通電によるジュ−ル熱で溶融させているが、双方の電極をアモルファス合金片または未アモルファス合金材料に接触させてアモルファス合金片または未アモルファス合金材料を通電によるジュ−ル熱で溶融させることもできる。後者の場合、電極間隔を広くし過ぎると、電極間のアモルファス合金片中間部分のベ−ス金属材への溶着が難しくなるので、電極間の間隔を狭くし、電極を複数回にわたり逐次アモルファス合金片の全面にわたって接触させて溶融・急冷・再アモルファス化を逐次に行っていくことが好ましい。
【0014】
本発明は、回転軸にアモルファス合金薄膜層を形成し、その回転軸に作用する回転トルクによって回転軸表面に発生する応力の主応力歪に基づく磁気的異方性エネルギ−の変化を、外部磁界の磁気抵抗の変化から検出して回転トルクを検知する場合のアモルファス合金薄膜層の形成に好適に使用できる。
また、本発明は、外力によって歪を発生するベ−ス材にアモルファス合金薄膜層を形成し、そのベ−スに発生する応力の歪に基づく磁気的異方性エネルギ−の変化を、外部磁界の磁気抵抗の変化から検出して歪を測定する場合のアモルファス合金薄膜層の形成に好適に使用できる。
【0015】
その外、アモルファス合金片を磁界センサ(アモルファス合金片に微小高周波電流を通電しその表皮効果によりインピ−ダンスが外部磁界で敏感に変化することを利用してそのアモルファス合金片両端間の出力電圧より外部磁界を検出する)として使用するために、セラミックス基板に高透磁率の金属膜を設け、その金属膜上にアモルファス合金薄膜層を形成するか、高透磁率金属上にアモルファス合金薄膜層を形成して磁界センサを製作する場合にも使用できる。
本発明において、磁気式センサとは上記歪の作用による磁気特性の変化を磁界を利用して検出するものや外部磁界をセンサの磁気特性の変化より検出するものの総称である。
【0016】
【実施例】
〔実施例〕
アモルファス合金片には、Co70515Si10Fe45細線の切断片を使用し、ベ−ス金属材には、厚み0.2mmのFe−Co−Ni合金板を使用し、通電時間を60μs、通電ピ−ク電流を700アンペアとした。
〔比較例〕
通電時間を950μs、通電ピ−ク電流を500アンペアとした以外、実施例と同じとした。
これらの実施例品及び比較例品について、一軸磁気異方性を検査したところ、実施例では一軸磁気異方性を有していたが、比較例では冷却速度が遅くアモルファス化が満足に達成されず一軸磁気異方性が認められなかった。
【0017】
【発明の効果】
本発明に係るアモルファス合金薄膜層の形成方法においては、アモルファス合金片または未アモルファス合金材料を溶融し、急冷してアモルファス化しているから、アモルファス合金片に加工歪が残留していても、溶融のために除去される。また、アモルファス合金薄膜を曲げて貼着する場合とは異なり、曲げ歪を排除できる。
尤も、急冷により熱収縮歪が付随するが、その歪は曲げ歪と薄膜加工歪との合計量に較べ充分に少なくできる。
更に、急冷によるアモルファス化のための特別の装置を必要としないので装置も簡単である。
【0018】
従って、本発明によれば、検出しようとする歪以外の付随歪の影響を排除して高感度かつ簡単な歪検出を保障できるアモルファス合金薄膜層を磁気式センサとしてベ−ス材に付設できる(例えば、磁気式非接触トルクセンサとして回転軸に付設できる)。
【図面の簡単な説明】
【図1】本発明に係るアモルファス合金薄膜層の形成方法を示す説明図であり、図1の(イ)はアモルファス合金の溶融前の状態を、図1の(ロ)は同じく溶融後の状態をそれぞれ示している。
【符号の説明】
1 ベ−ス金属材
2 アモルファス合金片
31 電極
32 電極
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for forming an amorphous alloy thin film layer on a base material and a method for attaching a magnetic sensor, for example, a magnetic non-contact torque sensor, to the base material by this method.
[0002]
[Prior art]
Amorphous alloys have a Villari effect, and it is known to use this effect to detect strain, and also to detect rotational torque applied to the rotating shaft by twisting torque → strain conversion.
That is, when the rotational torque T acts on the shaft of the diameter d, the shear stress τ represented by the formula (1) is generated on the shaft surface,
τ = 16T / (πd 3 ) (1)
Further, as is apparent from the stress circle of the mole, main stress is generated in the direction of 45 ° with respect to the shear direction.
[0003]
Thus, when the amorphous alloy thin film is fixed to the shaft surface, uniaxial magnetic anisotropy is exhibited in the principal stress direction, and the anisotropic energy Ku has a saturation magnetostriction constant of λs and the amorphous alloy thin film. Assuming that the torsional Young's modulus is Ga and the torsional Young's modulus of the shaft is Gs,
Ku = 48λsGa / (πd 3 Gs) (2)
Given in.
Therefore, it is possible to detect the torque T from the change in the relative magnetic permeability μr given from the magnetic resistance of the magnetic circuit passing through the amorphous alloy thin film by applying a magnetic field to the shaft.
[0004]
Of course, if an amorphous alloy thin film is fixed to the surface of a base material that generates strain due to external force, uniaxial magnetic anisotropy is exhibited in the direction of the force. It can be measured from the change in specific magnetic permeability μr given by the magnetic resistance of the magnetic circuit that passes through the amorphous alloy thin film. Furthermore, it can be used as a sensor for mass, pressure, etc. by grasping in advance the relationship between the amount of strain and external force. It is.
[0005]
[Problems to be solved by the invention]
Conventionally, in order to detect torque and strain by the above-described method, a previously formed amorphous alloy thin film is adhered to an axis of rotation with an adhesive such as an epoxy resin.
Therefore, due to the bending strain at the time of sticking and the processing strain at the time of thin film forming, the accompanying uniaxial magnetic anisotropy is unavoidable, and the anisotropic energy of the accompanying uniaxial magnetic anisotropy is inevitable. Kb is superimposed on the anisotropic energy -Ku in the main stress direction based on the torque, and the variability of the superimposed anisotropic energy with respect to the torque becomes gradual. As Kb increases, the detection sensitivity is inevitably lowered.
[0006]
An object of the present invention is to fix an amorphous alloy thin film layer to a base material, and to detect a strain generated in the base material by the Villari effect of the amorphous alloy thin film. An object of the present invention is to provide a method for forming an amorphous alloy thin film layer capable of ensuring high-sensitivity strain detection by eliminating the influence, and a method for attaching a magnetic sensor to a base material.
[0007]
[Means for Solving the Problems]
In the method for forming an amorphous alloy thin film layer according to the present invention, an amorphous alloy piece is brought into contact with a base material, the amorphous alloy piece is melted by instantaneous energization with a contact electrode, and after the energization is cut off, the molten metal is removed from the electrode. A structure characterized by rapid solidification by heat dissipation and amorphization again, or non-amorphous alloy material is used in place of the amorphous alloy piece, and the non-amorphous alloy material is melted by instantaneous energization with a contact electrode to cut off the energization Thereafter, the molten metal is rapidly cooled and solidified by heat radiation from the electrode to be amorphous, and in any structure, the amorphous alloy is Co 70 . 5 B 15 Si 10 Fe 4 . In the case of the composition of 5 , it is appropriate that the instantaneous current application time is 300 μs or less.
A method for attaching a magnetic sensor to a base material according to the present invention includes the above amorphous alloy using an amorphous alloy thin film layer as a magnetic sensor (for example, a magnetic non-contact torque sensor) on the base material (for example, a rotating shaft). The thin film layer is provided by a method for forming a thin film layer.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
In order to carry out the present invention, first, as shown in FIG. 1A, an amorphous alloy piece 2 is brought into contact with the base metal material 1, and further, the base metal material 1 and the amorphous alloy piece 2 are brought into contact with each other. The electrodes 31 and 32 are brought into pressure contact with each other.
Next, current is instantaneously applied to melt the amorphous alloy piece as shown in FIG. Reference numeral 20 denotes a molten metal.
[0009]
In this case, the electrical resistance of the amorphous alloy piece 2 (the electrical resistance including the contact resistance with the base metal material 1) is sufficiently higher than that of the base metal material 1 and the electrodes 31 and 32. -The heat of the heat is substantially generated only in the amorphous alloy piece 2 (including the contact interface with the base metal material 1). Further, the energization time of the current is sufficiently short, and the amount of heat that escapes from the amorphous alloy piece in which the Joule heat is generated within this energization time can be ignored. Therefore, if the heat capacity of the amorphous alloy piece is C, the electrical resistance of the amorphous alloy piece is R, the average current value is I, and the energization time is Δt, the temperature rise ΔT of the amorphous alloy piece is approximately ΔT = RI 2 Δt / C. ▲ 3 ▼
Given, if the melting point of the amorphous alloy flakes Tm, the normal temperature T 0, energization current I is approximately I = [C (Tm-T 0) / (RΔt) ] 1/2 ▲ 4 ▼
Given in.
[0010]
During the energization of the current value I for Δt time, the amount of heat transfer from the amorphous alloy piece 2 in which the Joule heat is generated to the electrode 32 or the base metal material 1 is substantially zero. Since the metal material 1 (the majority of the base metal material excluding the contact interface with the amorphous alloy piece) is held at almost normal temperature, the heat of the amorphous alloy piece is rapidly increased after the energization is cut off. The molten metal 20 is cooled and solidified by escaping to the base metal material 1.
In this cooling of the molten metal, the solidified metal can be amorphized again if it is quenched so as to prevent crystal growth, that is, depriving the latent heat of aggregation and preventing diffusion of atoms to become crystals. An amorphous alloy thin film layer can be formed on the material surface.
Therefore, in the present invention, the amorphous alloy pieces are energized and melted in a short time, and during this time, the temperature of the electrode and the base metal material is substantially reduced without transferring the amount of generated heat to the electrode 32 and the base metal material 1. Since it can be kept at room temperature, the heat of the molten metal rapidly moves to the electrode 32 and the base metal material 1 after the current supply is cut off, and the molten metal is rapidly cooled to ensure re-amorphization.
[0011]
In the present invention, the alloy composition of the amorphous alloy piece is an alloy of a transition metal such as Fe or Co and a nonmetal such as B or Si and is limited to a composition system having a nonmetal content of 10 to 30 atomic%, for example, Co 70 . 5 B 15 Si 10 Fe 4 . 5 (subscript indicates atomic%; the same applies hereinafter) and Fe 75 Si 10 B 15 are advantageous in terms of re-amorphization because the critical cooling rate for crystallization is relatively slow.
[0012]
Instead of an amorphous alloy piece, a non-amorphous alloy material, for example, a mixed material of Co powder 70.5%, B powder 15%, Si powder 10%, Fe powder 4.5%, or Fe powder 75%, Si powder 10 In addition to a mixed powder material that becomes an amorphous alloy by melting and quenching, such as a mixed material of 15% or B powder, a laminate of elemental foils can also be used.
Furthermore, the energization time is set to 300 μs or less, and the energization current is set to a current value or less that does not cause evaporative flying due to excessive melting.
[0013]
In the above-described embodiment of the present invention, one electrode is brought into contact with the amorphous alloy piece or the non-amorphous alloy material, and the other electrode is brought into contact with the base metal material so that the amorphous alloy piece or the non-amorphous alloy material is energized. -Although it is melted by the knurling heat, both the electrodes can be brought into contact with the amorphous alloy piece or the non-amorphous alloy material, and the amorphous alloy piece or the non-amorphous alloy material can be melted by the joule heat by energization. In the latter case, if the distance between the electrodes is too wide, it becomes difficult to weld the intermediate portion of the amorphous alloy piece between the electrodes to the base metal material. It is preferable to sequentially perform melting, quenching, and re-amorphization by bringing the entire surface into contact with each other.
[0014]
In the present invention, an amorphous alloy thin film layer is formed on a rotating shaft, and a change in magnetic anisotropy energy based on a principal stress strain of a stress generated on the surface of the rotating shaft by a rotating torque acting on the rotating shaft is measured. It can be suitably used for forming an amorphous alloy thin film layer when detecting the rotational torque by detecting the change in the magnetic resistance.
In addition, the present invention forms an amorphous alloy thin film layer on a base material that generates a strain due to an external force, and changes the magnetic anisotropy energy based on the strain of the stress generated in the base. It can be used suitably for the formation of an amorphous alloy thin film layer in the case where the strain is measured by detecting the change in the magnetic resistance.
[0015]
In addition, an amorphous alloy piece is used as a magnetic field sensor (by applying a minute high-frequency current to the amorphous alloy piece and the impedance changes sensitively by an external magnetic field due to the skin effect. For use as an external magnetic field), a ceramic film is provided with a high permeability metal film, and an amorphous alloy thin film layer is formed on the metal film, or an amorphous alloy thin film layer is formed on the high permeability metal. Thus, it can also be used when manufacturing a magnetic field sensor.
In the present invention, the magnetic sensor is a general term for a sensor that detects a change in magnetic characteristics due to the above-described distortion using a magnetic field and a sensor that detects an external magnetic field from a change in magnetic characteristics of the sensor.
[0016]
【Example】
〔Example〕
For amorphous alloy pieces, Co 70 . 5 B 15 Si 10 Fe 4 . Five fine wire cut pieces were used, and the base metal material was an Fe—Co—Ni alloy plate having a thickness of 0.2 mm. The energization time was 60 μs and the energization peak current was 700 amperes.
[Comparative example]
The same as the example except that the energization time was 950 μs and the energization peak current was 500 amperes.
When the uniaxial magnetic anisotropy was inspected for these Example products and Comparative Example products, the Examples had uniaxial magnetic anisotropy, but in the Comparative Examples, the cooling rate was slow and the amorphization was satisfactorily achieved. No uniaxial magnetic anisotropy was observed.
[0017]
【The invention's effect】
In the method for forming an amorphous alloy thin film layer according to the present invention, an amorphous alloy piece or a non-amorphous alloy material is melted and rapidly amorphized, so that even if processing strain remains in the amorphous alloy piece, To be removed. Further, unlike the case where the amorphous alloy thin film is bent and stuck, bending strain can be eliminated.
However, heat shrinkage strain is accompanied by rapid cooling, but the strain can be sufficiently reduced as compared with the total amount of bending strain and thin film processing strain.
Furthermore, since no special apparatus for amorphization by rapid cooling is required, the apparatus is simple.
[0018]
Therefore, according to the present invention, an amorphous alloy thin film layer capable of ensuring high sensitivity and simple strain detection by eliminating the influence of incidental strain other than strain to be detected can be attached to the base material as a magnetic sensor ( For example, it can be attached to the rotating shaft as a magnetic non-contact torque sensor).
[Brief description of the drawings]
FIG. 1 is an explanatory view showing a method for forming an amorphous alloy thin film layer according to the present invention, where FIG. 1 (a) shows the state before the amorphous alloy is melted, and FIG. 1 (b) shows the state after the melt. Respectively.
[Explanation of symbols]
1 Base metal material 2 Amorphous alloy piece 31 Electrode 32 Electrode

Claims (4)

ベ−ス材にアモルファス合金片を接触させ、接触電極による瞬時通電で上記アモルファス合金片を溶融させ、通電遮断後、この溶融金属を電極からの放熱で急冷固化して再度アモルファス化することを特徴とするアモルファス合金薄膜層の形成方法。The amorphous alloy piece is brought into contact with the base material, the amorphous alloy piece is melted by instantaneous energization with a contact electrode, and after the energization is cut off, the molten metal is rapidly cooled and solidified by heat radiation from the electrode, and is made amorphous again. A method for forming an amorphous alloy thin film layer. ベ−ス材に未アモルファス合金材料を接触させ、接触電極による瞬時通電で上記未アモルファス合金材料を溶融させ、通電遮断後、この溶融金属を電極からの放熱で急冷固化してアモルファス化することを特徴とするアモルファス合金薄膜層の形成方法。A non-amorphous alloy material is brought into contact with a base material, the non-amorphous alloy material is melted by instantaneous energization with a contact electrode, and after the energization is cut off, the molten metal is rapidly cooled and solidified by heat radiation from the electrode to become amorphous. A method for forming an amorphous alloy thin film layer. アモルファス合金組成がCo70515Si10Fe45であり、電流の瞬時通電時間が300μs以下である請求項1または請求項2記載のアモルファス合金薄膜層の形成方法。The amorphous alloy composition is Co 70 . 5 B 15 Si 10 Fe 4 . The method for forming an amorphous alloy thin film layer according to claim 1, wherein an instantaneous energization time of current is 300 μs or less. ベ−ス材にアモルファス合金薄膜層を磁気式センサとして請求項1乃至は3何れか記載のアモルファス合金薄膜層の形成方法により設けることを特徴とするベ−ス材に磁気式センサを付設する方法。4. A method for attaching a magnetic sensor to a base material, comprising the step of providing an amorphous alloy thin film layer as a magnetic sensor on the base material according to the method for forming an amorphous alloy thin film layer according to claim 1. .
JP19399496A 1996-07-04 1996-07-04 Method for forming amorphous alloy thin film layer and method for attaching magnetic sensor to base material Expired - Lifetime JP3640738B2 (en)

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