JP3661528B2 - Manufacturing method of semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device formed by stacking a plurality of semiconductor chips.
[0002]
[Prior art]
2. Description of the Related Art In recent years, with the increase in performance and miniaturization of electronic equipment, a plurality of semiconductor chips are arranged in one package to form a multichip package (hereinafter referred to as MCP). Functionalization and miniaturization are being attempted. The MCP includes a plurality of semiconductor chips arranged in a plane and a plurality of semiconductor chips stacked in the thickness direction. An MCP in which semiconductor chips are arranged in a plane requires a large mounting area, and therefore contributes little to downsizing of electronic devices. For this reason, development of stacked MCPs in which semiconductor chips are three-dimensionally stacked has been actively conducted.
[0003]
As this type of package structure, as disclosed in Japanese Patent No. 2870530, a module in which a semiconductor chip is mounted on an interposer is formed, and these modules are stacked by electrically connecting each other with conductive bumps. A structure is common. Further, there is a configuration disclosed in Japanese Patent No. 2871636 as a configuration example not using an interposer. This is done by laminating semiconductor chips with insulating resin interposed, forming holes in the electrode parts of this laminate by laser irradiation, filling the holes with conductive resin, and printing with conductive bumps on the lowermost chip part. It is structured to be mounted on a wiring board.
[0004]
[Problems to be solved by the invention]
However, in any of the above cases, since the package is directly mounted on the printed wiring board by the conductive bumps, the thermal expansion due to the temperature cycle of the chip causes relative difference in the thermal expansion coefficient between the printed wiring board and the package. There is a high possibility of disconnection due to a general positional displacement. As a countermeasure, it is necessary to fill the resin between the printed wiring board and the package with an underfill to absorb the stress. However, it is extremely difficult to perform the underfill after mounting, and it is not a general package. Therefore, as in the former, a chip-size package (CSP) can only implement a mounting method using solder bumps without intervening an interposer and having the same role as underfill. In the case of a package in which chips such as the latter are directly joined, it is still very difficult to mount on a board and has a problem of feasibility.
[0005]
An object of the present invention is to enable extremely easy conduction between common electrode pads in an MCP through a through hole. It is another object of the present invention to provide an MCP that can be mounted without an interposer and a method of manufacturing a semiconductor device using the MCP. A third object is to alleviate thermal stress generated between the MCP and a printed wiring board on which the MCP is mounted. A fourth object is to provide a structure that can minimize the mounting wiring distance of the MCP.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, an MCP manufacturing method according to the present invention includes stacking a plurality of semiconductor chips each having a through hole in a signal input / output electrode pad portion so that the through holes are arranged in a straight line. A columnar conductive resin shaft is formed in which conductive resin is pressurized and supplied from the openings of the through-holes arranged on the straight line so as to embed and enclose the conductive resin in a lump to conduct each electrode pad. . In this case, the resin sealing can be carried out in a short time by introducing a negative pressure suction to the opposite opening of the through hole to supply the resin under pressure. The semiconductor chip may be laminated through an adhesive layer having an opening corresponding to the electrode pad, and a conductive flange portion with the electrode pad may be integrally formed on the columnar conductive resin shaft. Furthermore, if the external connection terminal is integrally provided by inserting a conductive metal pin from the end face of the columnar conductive shaft after the encapsulation of the conductive resin and curing it, the external connection terminal as a package is provided on the back surface of the package, Since this directly becomes a connection terminal to the printed wiring board, the wiring distance can be set to the shortest.
[0007]
Also, in the MCP manufacturing method according to another configuration example of the present invention, after a through hole is formed in a signal input / output electrode pad portion, an insulating resin is sealed in the through hole, and then the back surface of each chip is formed. A thin film semiconductor chip is formed by wrapping, a through hole is formed in an insulating resin in a through hole of the thin film semiconductor chip, and the thin film semiconductor chip is stacked so that the through holes are arranged in a straight line. The conductive resin is pressurized and supplied from the openings of the arranged through-holes to form a columnar conductive resin shaft that embeds and encloses the conductive resin all together and conducts each electrode pad. Thereby, an MCP having a small package thickness can be manufactured.
[0008]
In the method of manufacturing a semiconductor device according to the present invention, a plurality of semiconductor chips each having a through hole formed in an electrode pad portion for signal input / output are stacked and integrated so that the through holes are arranged in a straight line. An MCP is produced by pressurizing and supplying a conductive resin from the openings of the through holes arranged in the same, thereby forming a columnar conductive resin shaft that embeds and encloses the conductive resin in a lump and conducts each electrode pad. An external electrode having the same arrangement pattern as the chip electrode is formed on the printed wiring board on which the chip is mounted, a conductive pin is erected on the external electrode, and the fixed height position is separated from the printed wiring board. The conductive pin is mounted by being inserted into the columnar conductive resin shaft. Since the conductive pin forms a gap between the printed wiring board and the package, it is possible to prevent thermal stress on the package side from affecting the printed wiring board side.
[0009]
Further, as another method for manufacturing a semiconductor device, a plurality of semiconductor chips each having a through hole formed in an electrode pad portion for signal input / output are stacked and integrated so that the through holes are arranged in a straight line. The conductive resin is pressurized and supplied from the openings of the through holes arranged in the above, thereby forming a columnar conductive resin shaft that embeds and encloses the conductive resin all together to conduct each electrode pad, and after the encapsulating of the conductive resin, A conductive metal pin is inserted from the end face of the columnar conductive shaft and cured to provide an MCP by integrally providing external connection terminals, and the same arrangement pattern as the chip electrode with respect to the printed wiring board on which the MCP is mounted The external connection terminal protruding from the back surface of the package is connected to the external electrode. It may be configured to and mounted.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, specific embodiments of a method for manufacturing an MCP and a semiconductor device according to the present invention will be described in detail with reference to the drawings.
[0011]
FIG. 1 shows a final process for establishing conduction between the common electrode pads between the stacked chips when the semiconductor MCP 10 according to the embodiment is manufactured. FIG. 2 is a partial schematic cross-sectional view of the semiconductor device 12 on which the manufactured MCP 10 is mounted. A plurality of semiconductor chips 14 (three in the illustrated example) constituting the semiconductor MCP 10 are stacked and integrated. When each chip 14 is configured as a memory element, the power supply line, data line, address line, and chip select electrodes can be shared. Therefore, since these chip electrodes can be arranged in common, by stacking the chips 14, the common electrodes are arranged in the vertical direction, and the chip electrode conduction between the upper and lower sides is achieved, so that the mounting density can be reduced. It can be increased up to the number of sheets.
[0012]
In this embodiment, a through hole 16 is formed through each electrode portion vertically with respect to each semiconductor chip 14 having chip electrodes arranged in common. First, as shown in FIG. 3, an aluminum film is formed on a silicon single crystal substrate 18 having a (100) crystal plane orientation on which various elements such as transistors, resistors, and wirings are formed via a silicon oxide film 21. An electrode pad 20 is formed. A silicon oxide film 22 to be a Si-resistant etching film is formed on the electrode pad 20 by a CVD method or the like (FIG. 2A). Similarly, a silicon oxide film 24 is formed on the back surface of the silicon single crystal substrate 18 (FIG. 2B). In this state, the preceding hole 26 penetrating the electrode pad 20 is formed by irradiating laser light ((c) in the figure). Next, anisotropic etching is performed to enlarge the diameter of the leading hole 26 ((d) in the figure). At this time, the electrode pad 20 made of aluminum is also enlarged by etching to form the through hole 16. A silicon oxide film 28 is formed by CVD or the like on the inner wall surface of the through-hole 16 and the pad inner peripheral edge expanded by anisotropic etching, and the surface of the electrode pad 20 is exposed ((e) in the figure).
[0013]
Since the through holes 16 are formed in the respective chip electrode portions in this way, when the diced semiconductor chips 14 are aligned and overlapped, the through holes 16 are arranged in a straight line at the common electrode portions. Therefore, the conductive resin 30 is collectively filled and sealed by pressurizing and supplying the conductive resin 30 from the upper (or lower) opening to the through holes 16, 16,... Arranged in a straight line. Thus, a columnar conductive resin shaft 32 that conducts each electrode pad 20 is formed.
[0014]
For this reason, as shown in FIG. 1, an adhesive layer 34 such as polyimide is attached to the active surface side of each semiconductor chip 14, and a semiconductor chip 14 is stacked on the upper layer to form a chip stack 14 </ b> M. . At this time, the electrode pad 20 portion is opened in the adhesive layer 34, and when the conductive resin 30 is absorbed later, the conductive resin 30 goes around the electrode pad 20. Then, the chip laminated body 14M with the adhesive layer 34 interposed is sandwiched by pressing jigs 36 and 38 from the front and back surfaces. A space 40 surrounding the electrode pad 20 in the uppermost semiconductor chip 14 is formed in the upper holding jig 36 in the same manner as the opening of the adhesive layer 20. Further, a space 42 surrounding the exit portion of the through hole 16 opened on the back surface of the chip laminated body 14M is formed in the lower pressing jig 38 in the same manner as the opening of the adhesive layer 20.
[0015]
A resin supply pipe 46 communicating with the pressurizing cylinder 44 is branched to the upper holding jig 36 and connected to each pad surrounding space 40. The pressure cylinder 44 is connected to a conductive resin tank 48, and a direction switching electromagnetic valve 52 of the resin supply pipe 46 is interposed between the pressure cylinder 44 and the suction pipe 50 from the tank 48. Thus, the tank 48 and the cylinder 44 are connected during the suction operation of the pressurizing cylinder 44 by the operation of the direction switching solenoid valve 52, and the cylinder 44 and the resin supply pipe 46 are connected during the pressurizing operation. The conductive resin 30 can be supplied to the space 40.
[0016]
On the other hand, a negative pressure introduction path 54 communicating with each through hole outlet surrounding space 42 is formed in the lower holding jig 38. This is connected to a compressor (not shown). Therefore, by applying a suction negative pressure to the through hole 16 through the negative pressure introducing passage 54, the pressure cylinder 44 assists the injection of the pressurized supply of the conductive resin 30 to the through hole 16.
[0017]
In the state where the chip laminated body 14M is sandwiched by the upper and lower pressing jigs 36 and 38 of the above-described conductive resin 30 supply means, suction negative pressure is introduced into the through holes 16 arranged in a straight line, and the pressure cylinder Once the conductive resin 30 is inhaled into 44, the supply path to the through hole 16 is opened by the operation of the direction switching solenoid valve 52, and the conductive resin 30 is pressurized and supplied. 16,... Can be filled with the conductive resin 30 all at once. As a result, the columnar conductive resin shafts 32 are easily formed in a large number of through-holes 16 of the chip laminated body 14M by a single injection operation. As a result, a conductive flange portion 32 </ b> F with the electrode pad 20 is integrally formed on the columnar conductive resin shaft 32. The conductive flange portion 32F exhibits an effect of strengthening the bonding of the semiconductor chips 14.
[0018]
In the MCP 10 obtained in this manner, the conductive resin cured portion formed by the through hole exit surrounding space 42 of the lower pressing jig 38 on the back surface can be used as an external connection pad as a package. Therefore, external electrode pads are arranged on the printed wiring board in the same manner as the electrode pads 20 of the semiconductor chip 14, and the external connection pads are welded to solder balls mounted on the external electrode pads. Can be implemented. In this way, the wiring distance can be set to the shortest.
[0019]
By the way, the MCP 10 generates heat due to repeated operation, and stress due to this thermal history may adversely affect the joint portion with the printed wiring board to be mounted. Therefore, as shown in FIG. 2, the conductive pin 56 is inserted and inserted from the end face of the columnar conductive resin shaft 32 of the MCP 10 and used as an external connection terminal. The conduction pin 56 is formed of a conductive metal material such as aluminum, tungsten, or copper, and has a structure that can be inserted into the opening diameter of the through hole 16 and has a diameter. Moreover, the pin length should just be what can be inserted in the through-hole 16 of the semiconductor chip 14 of at least one layer, and should just be about 200-500 micrometers in length. Of course, the length inserted into all the through holes 16 of the chip laminated body 14M may be used. The conduction pins 56 are set so as to protrude from the back surface of the package by a certain length, and are electrically connected to the external electrode pads 60 of the printed wiring board 58 by using solder balls 62 as shown in FIG. And mounting is performed so that a gap 64 is set between the MCP 10 and the printed wiring board 58. Thereby, thermal stress relaxation in the MCP 10 and the printed wiring board 58 can be relaxed by the conduction pins 56.
[0020]
Next, FIG. 4 shows a manufacturing process in the case where the semiconductor chip 14 is thinned to manufacture the MCP and the semiconductor device on which the MCP is mounted. Through holes 16 are formed in each semiconductor chip 14 by the method shown in FIG. 3 (FIG. 4 (1)), and then the inside of the through holes 16 is filled with a thermosetting insulating resin 66 and cured (FIG. 4). (2)). As a result, the through hole 16 is filled and cracking due to subsequent lapping can be prevented, so that the back surface side of the semiconductor chip 14 can be lapped, and the thinning process of the semiconductor chip 14 can be realized. Therefore, back wrapping is performed until the required thickness is reached (FIG. 4 (3)). The insulating resin 66 in each through hole 16 of the thinned semiconductor chip 14H is irradiated with laser light to open 50 to 100 μm through holes 68 (FIG. 4 (4)). Thereby, a conduction path is secured. Therefore, the thin film semiconductor chips 14H are stacked so that the through holes 68 are arranged in a straight line, and the conductive resin 30 is pressurized and supplied through the openings of the through holes 68 arranged in the straight line. A columnar conductive resin shaft 32 that embeds and encloses 30 to conduct each electrode pad 20 is formed (FIG. 4 (5)). The conductive resin 30 may be injected by a method similar to the method described with reference to FIG. Thereafter, the conductive pin 56 is inserted and inserted from the end face of the columnar conductive resin shaft 32, and this is used as an external connection terminal, and can be mounted by being connected to the external electrode pad 60 on the printed wiring board 58 (FIG. 4 ( 6)).
[0021]
In the above-described embodiment, an example in which the conduction pin 56 is attached in advance to the MCP 10 is shown. However, as shown in FIG. 5A, the conduction pin 56 is mounted on the external electrode pad 60 of the printed wiring board 58 by the multi-handling device 70. In a lump. Next, as shown in FIG. 5 (2), the MCP 10 on which the columnar conductive resin shaft 32 is formed is aligned with this, and the package 10 is moved downward so as to be inserted from the end surface of the columnar conductive resin shaft 32 on the back surface of the package 10. Then, the conductive resin 30 may be thermally cured.
[0022]
FIG. 6 shows a circuit board 1000 on which the semiconductor device 1100 according to the embodiment of the present invention is mounted. As the circuit board 1000, an organic substrate such as a glass epoxy substrate is generally used. On the circuit board 1000, for example, a bonding portion made of copper is formed to be a desired circuit. The bonding portion and the external electrode of the semiconductor device 1100 are mechanically connected to achieve electrical conduction therebetween.
[0023]
Note that since the mounting area of the semiconductor device 1100 can be reduced to a mounting area with a bare chip, if the circuit board 1000 is used for an electronic device, the electric device itself can be downsized. In addition, in the same area, more mounting space can be secured and higher functionality can be achieved.
[0024]
FIG. 7 shows a notebook personal computer 1200 as an electronic apparatus provided with the circuit board 1000. Since the notebook personal computer 1200 includes the circuit board 1000 with high functionality, the performance can be improved.
[0025]
【The invention's effect】
As described above, in the present invention, a plurality of semiconductor chips each having a through hole formed in a signal input / output electrode pad portion are stacked so that the through holes are arranged in a straight line, and the through holes arranged in the straight line are arranged. Since the conductive resin is pressurized and supplied from the openings, the conductive resin is collectively embedded and sealed to form the columnar conductive resin shaft that conducts each electrode pad. There is an effect that conduction can be realized very easily through a through hole.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a final process for establishing conduction between common electrode pads between stacked chips in a manufacturing process of a semiconductor multichip package according to an embodiment.
FIG. 2 is a partial schematic cross-sectional view of a semiconductor device mounted with a multichip package.
FIG. 3 is an explanatory diagram of a process for forming a through hole in a semiconductor chip.
FIG. 4 is a cross-sectional view showing a manufacturing process of a multichip package of a thin film semiconductor chip.
FIG. 5 is an explanatory diagram of a process of mounting a multichip package on a printed wiring board.
FIG. 6 is an explanatory diagram of an application example of the multichip package according to the embodiment to a circuit board.
FIG. 7 is an explanatory diagram of an application example of the multichip package according to the embodiment to an electronic device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Semiconductor multi package 12 Semiconductor device 14 Semiconductor chip (memory chip)
14M Chip laminated body 16 Through hole 18 Silicon single crystal substrate 20 Electrode pad (chip electrode)
22, 24 Silicon oxide film 26 Lead hole 28 Silicon oxide film 30 Conductive resin 32 Columnar conductive resin shaft 34 Adhesive layer 36 Upper pressing jig 38 Lower pressing jig 40 Pad surrounding space 42 Through hole outlet surrounding space 44 Pressure cylinder 46 Resin Supply pipe 48 Conductive resin tank 50 Suction pipe 52 Direction switching solenoid valve 54 Negative pressure introduction path 56 Conductive pin 58 Printed wiring board 60 External electrode pad 62 Solder ball 64 Air gap 66 Insulating resin 68 Laser through hole 70 Multi-handling device

Claims (6)

A plurality of semiconductor chips in which through holes are formed in the electrode pad portion for signal input / output are stacked so that the through holes are arranged in a straight line, and negative pressure suction is applied to the opening opposite to the through holes arranged in the straight line. And a conductive resin is pressurized and supplied from the opening of the through hole to form a columnar conductive resin shaft that embeds and encloses the conductive resin in a lump to conduct each electrode pad. Manufacturing method.   2. The semiconductor device according to claim 1, wherein the semiconductor chip is laminated through an adhesive layer having an opening corresponding to an electrode pad, and a conductive flange portion with the electrode pad is integrally formed on the columnar conductive resin shaft. Manufacturing method.   2. The method of manufacturing a semiconductor device according to claim 1, wherein the external connection terminals are integrally provided by inserting and curing a conductive metal pin from an end face of the columnar conductive shaft after sealing the conductive resin.   After forming a through hole in the signal input / output electrode pad portion, encapsulating an insulating resin in the through hole, and then wrapping the back of each chip to form a thin film semiconductor chip. In the through hole of the thin film semiconductor chip By drilling through holes in insulating resin, laminating thin film semiconductor chips so that the through holes are arranged in a straight line, and supplying conductive resin under pressure from the openings of the through holes arranged in the straight lines, A method of manufacturing a semiconductor device, comprising forming a columnar conductive resin shaft that embeds and encloses conductive resin in a lump to conduct each electrode pad.   A plurality of semiconductor chips in which through holes are formed in the signal input / output electrode pads are stacked and integrated so that the through holes are arranged in a straight line, and conductive resin is applied from the openings of the through holes arranged in the straight line. A multi-chip package is produced by forming a column-shaped conductive resin shaft that embeds and encloses a conductive resin in a lump by supplying pressure and energizes each electrode pad, and a printed wiring board on which the multi-chip package is mounted An external electrode having the same arrangement pattern as that of the chip electrode is formed, a conductive pin is erected on the external electrode, and the conductive pin is formed in the column shape at a fixed height position away from the printed wiring board. A method for manufacturing a semiconductor device, wherein the semiconductor device is mounted by being inserted into a conductive resin shaft.   A plurality of semiconductor chips in which through holes are formed in the signal input / output electrode pads are stacked and integrated so that the through holes are arranged in a straight line, and conductive resin is applied from the openings of the through holes arranged in the straight line. By supplying pressure, a conductive resin is collectively embedded and sealed to form a columnar conductive resin shaft that conducts each electrode pad. After the conductive resin is sealed, a conductive metal pin is inserted from the end surface of the columnar conductive shaft. The multi-chip package is manufactured by integrally providing the external connection terminals by curing with, and the external electrode having the same array pattern as the chip electrode is formed on the printed wiring board on which the multi-chip package is mounted. And connect the external connection terminal protruding from the back of the package to the external electrode. The method of manufacturing a semiconductor device, characterized in that to instrumentation.

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