JP3663400B2 - Deposition equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film forming apparatus for supplying a plurality of types of processing gas into a processing space and forming a film on the surface of an object to be processed using the processing gas.
[0002]
[Prior art]
Various types of film forming apparatuses of this type are known. As a prior art that seems to be the closest to the present invention, disclosed in “Patent Head Structure and Processing of Processing Apparatus” disclosed in Patent Document 1 below. Gas supply method ”and“ gas source molecular beam epitaxy apparatus ”disclosed in Patent Document 2. The above prior art shown in FIGS. 11 to 13 will be described below.
[0003]
First, Patent Document 1 will be described.
[0004]
A processing gas is ejected from a shower head body 61 attached to the processing container 60 in a vacuum state, and the processing gas is sprayed onto the surface of the semiconductor wafer W disposed in the processing container 60, and an insulating oxide film is formed on the surface. In addition, a metal film for wiring is formed. A support column 62 is provided at the bottom of the processing container 60, and a mounting table 63 is coupled thereon. A semiconductor wafer W is placed on the mounting table 63. In addition, the mounting table 63 is heated through a transmission window 65 made of quartz glass by a heating lamp 64 which is a heater arranged below the processing container 60, and the semiconductor wafer W is brought to a predetermined temperature suitable for the processing. Is maintained.
[0005]
The shower head body 61 is formed by integrating an upper block 66, a middle block 67, and a lower block 68 made of thick plate materials, and each block is provided with a source gas supply path 69 and a reducing gas supply path 70. ing. FIG. 11 shows the state where these supply paths 69 and 70 are branched in the form of an exploded view. The source gas supply path 69 is bifurcated in the upper block 66 to form bifurcated paths 69A and 69A, which are further bifurcated in the middle block 67 to form four branched paths 69B. In the lower block 68, four gas ejection passages 69C are formed for convenience.
[0006]
Similarly, the reducing gas supply path 70 is bifurcated in the upper block 66 to form branch paths 70A and 70A, which are further branched and bent in the middle block 67, respectively, for convenience. Furthermore, in the lower block 68, five gas ejection passages 70C are formed. In the above description, the gas ejection path 69C is described as 4 convenient, and the gas ejection path 70C is described as 5 convenient, but these are the numbers in the cross section of FIG. 11 and FIG. When viewed, a large number of gas ejection paths 69 </ b> C and 70 </ b> C are opened over the entire lower surface of the lower block 68.
[0007]
In order to prevent the processing gas from being deposited in the gas ejection path 69 </ b> C of the lower block 68 due to radiant heat from the semiconductor wafer W, a cooling water path 71 is provided in the shower head body 61. The water channel 71 descends from the vicinity of the end portion of the upper block 66, uniformly cools the gas ejection channels 69C and 70C of the lower block 68, and flows out from the upper block 66 on the opposite side. In addition, the heating unit 72 heats the middle block 67 and the upper block 66 that are not easily exposed to radiant heat from the semiconductor wafer W so that the processing gas is not liquefied or thermally decomposed. The exhaust passage 73 is connected to a vacuum pump (not shown), and the inside of the processing container 60 is evacuated during film formation.
[0008]
Next, Patent Document 2 will be described. In this description, the same reference numerals are used in FIG. 13 for the matters substantially the same as those described in Patent Document 1, and the description thereof is omitted.
[0009]
The shower head main body 61 is formed by laminating a diffusion chamber 74 to which a first source gas is supplied and a diffusion chamber 75 to which a second source gas is supplied. A horizontal diffusion plate 77 is disposed in the immediate vicinity of the opening of the first supply pipe 76 entering the diffusion chamber 74, where the first source gas is diffused. The diffusion chamber 75 is formed of a pan-shaped container, and a horizontal diffusion plate 79 is disposed in the immediate vicinity of the second supply pipe 78 opened at the bottom thereof, where the second source gas is diffused. The first and second source gases diffused in this manner are injected toward the wafer W from the gas ejection paths 69C and 70C, respectively.
[0010]
[Patent Document 1]
JP-A-8-291385
[Patent Document 2]
Japanese Patent Publication No. 8-11718
[0011]
[Problems to be solved by the invention]
The problem in Patent Document 1 will be described. In the case of the shower head main body 61 as described above, the flow path of the raw material gas and the reducing gas is formed through the blocks 66, 67, 68 in the thickness direction of the upper block 66, the middle block 67, and the lower block 68. ing. At the same time, since the source gas supply path 69 and the reducing gas supply path 70 are complicatedly branched in the upper block 66 and the middle block 67, the flow paths of the respective channels reaching the gas ejection paths 69C and 70C of the lower block 68 are as follows. The flow path configuration is such that the resistance is difficult to equalize. In particular, if the processing gas that has flowed into the upper block 66 is, for example, the raw material gas supply path 69, there are four locations where the flow path is bent at substantially right angles up to the gas ejection path 69C of the lower block 68. In addition, an increase in flow resistance and pressure loss due to such a large number of bent portions have a great influence on the state of ejection of the processing gas.
[0012]
Therefore, the flow rates of the processing gases ejected from the gas ejection channels 69C and 70C vary, the crystal growth on the surface of the semiconductor wafer W becomes uneven, and the crystal film thickness and other film quality requirements are satisfied. It will not be a thing. Such a problem occurs because the flow path configuration in which each processing gas such as a raw material gas and a reducing gas passes through the blocks 66, 67, and 68 in the thickness direction and branches is overlapped. It is the cause.
[0013]
Each of the upper block 66 and the middle block 67 is provided as a structure for branching the flow path of the processing gas, and finally, a large number of gas ejection paths 69C and 70C are formed in the lower block 68. It has a structure. Therefore, since it is necessary to form a plurality of completely different flow paths for each processing gas in each of the blocks 66, 67, 68, the flow path structure of each block becomes very complicated. It's not a good idea to manage the production of blocks. In addition, since the flow volume of the processing gas in the shower head increases with the complicated and diverse flow path configuration as described above, the residual gas at the time of forming the multilayer film may not be completely removed. This makes it impossible for ALD (Atomic Layer Deposition) to proceed properly.
[0014]
Further, when the blocks 66, 67, and 68 are stacked and integrated, for example, it is very important in terms of assembly accuracy to accurately connect the branch path 70A of the upper block 66 and the branch path 70B of the middle block 67. If this kind of communication is not ensured correctly, the flow area of the processing gas becomes small at this communication location, and an appropriate flow rate cannot be secured, resulting in film formation. It will adversely affect quality. Further, if the branch paths 70A and 70B are deviated at the communication location, a turbulent flow is generated in the flow of the processing gas, and the proper gas supply cannot be performed.
[0015]
Next, problems in Patent Document 2 will be described. The spatial shape of the diffusion chambers 74 and 75 here is such that the horizontal diffusion plates 77 and 79 are indispensable because the vertical space size in FIG. 13 is large. However, with this type of diffusion plate, there is a possibility that the gas flow to the gas ejection paths 69C and 70C hidden behind the diffusion plate will be significantly less than the other gas ejection paths. Therefore, similarly to Patent Document 1, there is a possibility that variations occur in the flow rates of the processing gases in the gas ejection channels 69C and 70C.
[0016]
Further, since the space dimensions of the diffusion chambers 74 and 75 are increased in the vertical direction, the supply gas pressure to the gas ejection paths 69C and 70C is hardly increased, the gas injection amount to the wafer W is reduced, and favorable film formation is performed. May cause trouble. And it becomes difficult to comprise the shower head main body 61 compactly for the above space dimensions.
[0017]
The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a film forming apparatus having a compact gas ejection head while the gas ejection state from each nozzle of the gas ejection head is optimized. .
[0018]
[Means for Solving the Problems]
  In order to achieve the above object, a film forming apparatus of the present invention has a gas ejection head for supplying a plurality of types of processing gas into a processing space, and forms a film on the surface of an object to be processed with the processing gas. The gas ejection head is provided with a plurality of nozzles for independently ejecting each processing gas on a head surface facing the object to be processed, and each processing gas is provided in the gas ejection head, respectively. A state in which a plurality of diffusion spaces introduced independently and a partition member that separates and separates the diffusion spaces, and the diffusion chamber units formed in the diffusion chamber of the processing gas into which the diffusion spaces are introduced are stacked The processing gas is supplied to the nozzle corresponding to each processing gas from each diffusion space.The introduction pipe forming the processing gas introduction path is embedded in the partition member.It is a summary.
[0019]
That is, in the film forming apparatus of the present invention, the gas ejection head is provided with a number of nozzles for independently ejecting each processing gas on the head surface facing the object to be processed. A diffusion chamber unit formed in the diffusion chamber of the processing gas into which the diffusion space is introduced, including a plurality of diffusion spaces into which the processing gases are introduced independently; and a partition member that separates and separates the diffusion spaces. The gas is present in a stacked state, and the processing gas is supplied from the diffusion spaces to the nozzles corresponding to the processing gas.
[0020]
With the configuration as described above, one kind of processing gas supplied to a specific diffusion space is dispersed in the diffusion space, fills the diffusion chamber, and is directed toward the nozzle for the processing gas. In addition, other types of processing gas supplied to other diffusion spaces are also directed toward the nozzle for the processing gas through a similar flow process. In each diffusion chamber unit having such a laminated structure, each processing gas is circulated toward the nozzle, so that the flow path structure of the processing gas toward the nozzle is simplified, and accordingly the flow path in each flow path The resistance is also easily uniformed. As a result, the amount of gas ejected from a large number of nozzles is made as uniform as possible, the film formation proceeds stably, and good film formation quality is obtained. In addition, since such stable film formation proceeds, the time required for film formation is shortened, which is effective for improving productivity.
[0021]
  The processing gas that has flowed into each diffusion space flows to a predetermined location, and is then redirected toward the nozzle for that processing gas. Since the processing gas can be ejected from a large number of nozzles at the same time based on such a flow form, it is possible to avoid the problems of increase in channel resistance and pressure loss as described above. In addition, since the gas ejection head is configured with a laminated structure of the diffusion chamber units, it is easy to reduce the size of the gas ejection head.In addition, since the introduction pipe forming the process gas introduction path is embedded in the partition member, the obstacle in the diffusion space is only the nozzle opening and / or the nozzle pipe, and the process gas introduction path is formed in the partition member. Since the parts can be formed without substantially protruding, the parts can be simplified.
[0022]
In the film forming apparatus of the present invention, the diffusion space and the partition member are arranged in a direction substantially along the head surface, and the diffusion space is flattened so as to cover at least a range where the nozzle is arranged on the head surface. In this case, the partition member is disposed in a direction substantially along the head surface, and accordingly, the diffusion space is also disposed in a direction substantially along the head surface. The flat space is a space that covers the arrangement range of the nozzles.
[0023]
For this reason, the processing gas injected into the diffusion space is immediately filled in the thickness direction of the flat space, and a gas flow component in the direction along the head surface is strongly generated. That is, since it is a flat diffusion space such as a narrow gap, the inflowing process gas quickly fills the entire diffusion space. Therefore, the processing gas is actively diffused over the entire flat space by the flow component in the direction along the head surface and is filled in the diffusion chamber, and the processing gas pressure in the diffusion chamber is maintained at a normal level.
[0024]
As a result, the processing gas supply pressure to each nozzle is sufficiently ensured, and the amount of processing gas ejected onto the surface of the object to be processed can be made as uniform as possible, which is the best for good film formation. A processing gas atmosphere can be obtained. Further, by making the diffusion space flat, the volume required for the flow of the processing gas in each diffusion chamber unit or a diffusion chamber member described later is remarkably reduced. Therefore, when the multilayer film is formed by changing the type of the processing gas, the residual gas is reduced and the type of the processing gas is quickly changed. For example, from the first film formation to the second film formation. The sharpness at the time of so-called multilayer film formation can be obtained well. Such an effect becomes even more remarkable with simplification of the flow path as described later.
[0025]
In the film forming apparatus of the present invention, a processing gas introduction path for independently introducing each processing gas is disposed in each diffusion space, and the processing gas introduction path is introduced into the diffusion space from the processing gas introduction path. In addition to the shape of the flat diffusion space as described above, the processing gas introduction path improves the processing gas distribution. Therefore, the processing gas is distributed as uniformly as possible over the entire diffusion space, and the processing gas is accurately supplied to the corresponding nozzle.
[0026]
In the film forming apparatus of the present invention, when the introduction port for introducing the processing gas into the diffusion space from the processing gas introduction path is open toward the inner wall surface of the diffusion chamber opposite to the head surface, Since the processing gas from the inlet is sprayed to the inner wall surface forming the diffusion chamber, the processing gas collides with the inner wall surface to form a radial diffusion flow, and immediately fills the entire diffusion chamber. The nozzle is accurately supplied.
[0027]
In the film forming apparatus of the present invention, the gas ejection head includes a small volume diffusion chamber that is set to be sufficiently smaller than the diffusion chamber by introducing a processing gas independently of the diffusion chamber unit, and the small volume. A diffusion chamber member provided with a supply flow path for supplying a processing gas to a nozzle corresponding to the processing gas branched from the diffusion chamber and introduced into the small volume diffusion chamber; In the case where the diffusion chamber units are disposed adjacent to each other, the advantages of the diffusion chamber members can be obtained synergistically in addition to the advantages of the diffusion chamber units such as process gas distribution. That is, the processing gas supplied to the small volume diffusion chamber independent of the diffusion chamber unit is directed to the nozzle corresponding to the processing gas via the supply flow path branched from the small volume diffusion chamber. Since this small volume diffusion chamber is set to be much smaller in volume than the above diffusion chamber, the processing gas is temporarily held at a certain high pressure in the small volume diffusion chamber with a small volume, and from that state to the nozzle Since the gas is supplied, the supply gas pressure with respect to the nozzle connected to the supply flow path can be maintained high, and the processing gas can be ejected through the diffusion chamber member without any shortage.
[0028]
Further, since the diffusion chamber members are arranged adjacent to any one of the diffusion chamber units, it is advantageous for making the gas ejection head compact. Since the volume of the small volume diffusion chamber is extremely small as described above, the volume required for the flow of the processing gas in the diffusion chamber member is significantly reduced. Therefore, when the multilayer film is formed by changing the type of the processing gas, the residual gas is reduced and the type of the processing gas is quickly changed. For example, from the first film formation to the second film formation. The sharpness at the time of so-called multilayer film formation can be obtained well. Such an effect becomes even more remarkable with simplification of the flow path as described later.
[0029]
In addition, since the diffusion chamber member having a small volume diffusion chamber that has a small volume and can perform processing gas switching more quickly and the above-described diffusion chamber unit are provided in a mixed manner, for example, more rapid switching can be performed. Necessary processing gas is introduced into the diffusion chamber member, and processing gas that does not require so much switching agility is introduced into the diffusion chamber unit.For example, the diffusion chamber unit and the diffusion chamber member are properly used according to the type of processing gas, A high-quality multilayer film can be formed with a low-cost apparatus.
[0030]
In the film forming apparatus of the present invention, when a plurality of processing gas ejection portions provided with nozzles for ejecting a plurality of different types of processing gas in the vicinity thereof are arranged on the head surface at a predetermined interval. The flow path of the processing gas obtained by the flow path configuration from each of the diffusion spaces stacked as described above opens to the head surface in the state of a nozzle to constitute the ejection section, and the ejection section is predetermined. Since a plurality of nozzles are arranged at intervals, the amount of the processing gas ejected from each ejection portion can be made as uniform as possible with respect to the object to be processed, which is the best for good film formation. A processing gas atmosphere can be obtained. In addition, in the case where a slight difference occurs in the amount of the processing gas ejected from the plurality of ejecting portions, the processing gas ejection state to the object to be processed is increased by increasing the arrangement density of the ejecting portions with a small amount of ejecting. Can be optimized.
[0031]
In the film forming apparatus of the present invention, the ejection section has a multiple structure in which nozzle openings and / or nozzle tubes are arranged so as to independently eject a plurality of different processing gases, and the nozzle tube is a head surface. And the nozzle opening and / or nozzle tube arranged concentrically is connected to a diffusion space or a supply flow channel into which the processing gas ejected by the nozzle tube is introduced. Since these are connected to the diffusion space or the supply flow path for introducing a plurality of different processing gases, different processing gases are ejected concentrically in an annular layer. Such ejection is performed in the vicinity of the head surface. Therefore, various processing gases are well mixed or reacted for film formation at or near the nozzle opening and / or the portion ejected from the nozzle tube. Further, since the nozzle tube is connected to the diffusion space or the supply flow path, when the diffusion chamber unit is stacked and assembled, the nozzle tube functions like a knock pin for positioning, and the assembly work is simplified. And the assembly accuracy is improved.
[0032]
In the film forming apparatus of the present invention, when the nozzle tube communicates with a diffusion space or a supply flow channel that is disposed on the side farther from the object to be processed as the nozzle tube located inside the multiple structure, Since the nozzle pipe located is connected to the diffusion space or supply flow path disposed on the side far from the object to be processed, the processing gas from the diffusion space or supply flow path on the far side is independently flowed by this nozzle pipe. It can be ejected as a road. Similarly, the outer nozzle tube of the inner nozzle tube is connected to the diffusion space or the diffusion space closer to the object to be processed than the supply flow path, so that different processing gases are supplied to the outer side. It can be ejected from the nozzle tube as an independent flow path. That is, since different processing gases are individually introduced into each of the stacked diffusion chamber units and diffusion chamber members, each of these processing gases is ejected from each concentric nozzle tube in an independent flow path form. Can do it.
[0033]
In the film forming apparatus of the present invention, in the gas ejection head, a diffusion chamber unit or diffusion chamber member positioned at least on the processing object side of each diffusion chamber unit or diffusion chamber member and a position opposite to the processing object. When the temperature of the diffusion chamber unit or the diffusion chamber member to be controlled is controlled independently, the diffusion chamber unit or the diffusion member positioned on the object to be processed is suitable for radiant heat from the object to be processed. Since the cooling is performed, it is possible to prevent the processing gas from being decomposed in the jetting part, that is, the nozzle opening and / or the nozzle tube or in the vicinity thereof, or a film forming phenomenon is prevented. Further, by heating the diffusion chamber unit or the diffusion chamber member until the diffusion chamber unit or the diffusion chamber member is heated by the radiant heat from the object to be processed, the processing gas has a low dew point and is easily condensed at a low temperature. In the case of using a gas, condensation of the processing gas in the flow path can be prevented, and film formation defects due to insufficient ejection of the processing gas can be prevented. Also, in the diffusion chamber unit or diffusion chamber member located on the side opposite to the object to be processed, the diffusion chamber unit or diffusion chamber member that is difficult to receive radiant heat from the object to be processed is subjected to appropriate temperature control. When a processing gas having a low dew point is used, condensation thereof is prevented and normal processing gas can be supplied. Then, as described above, the temperature of the diffusion chamber unit or diffusion chamber member positioned on the object to be processed side and the diffusion chamber unit or diffusion chamber member positioned on the side opposite to the object to be processed are controlled independently. Thus, the most suitable temperature control can be performed for the processing gas corresponding to each diffusion chamber unit or diffusion chamber member, and the properties of the injected processing gas are optimal for film formation.
[0034]
  In the film forming apparatus of the present invention, only the nozzle opening and / or the nozzle tube are provided in the diffusion space in the height direction of the diffusion space.In a state of penetrating the spaceIf present, the process gas introduced into the diffusion space spreads as a diffusion flow under the influence of only the minimum obstacles, that is, the nozzle opening and / or the nozzle tube. The diffusion flow of the liquid spreads as quickly and uniformly as possible throughout the entire area. Therefore, the flow rate of the processing gas from each nozzle opening and / or nozzle tube is an appropriate injection.
[0035]
In the film forming apparatus of the present invention, when the processing gas introduction path is arranged so as not to substantially protrude into the diffusion space, the obstacle in the diffusion space is only the nozzle opening and / or the nozzle tube. Therefore, the diffusion flow in the diffusion space expands as quickly and uniformly as possible over the entire area. Therefore, the flow rate of the processing gas from each nozzle opening and / or nozzle tube is an appropriate injection.
[0037]
In the film forming apparatus of the present invention, when temperature control is performed for each partition member, optimum temperature control can be performed for the processing gas in each diffusion space, and the properties of the processing gas can be appropriately maintained. Can do. In particular, since the entire gas ejection head is placed in a vacuum environment and the gas ejection head is in a vacuum insulation state, such temperature control for each partition member is extremely effective.
[0038]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described in detail.
[0039]
FIG. 1 shows an embodiment of a film forming apparatus of the present invention. In this apparatus, a separation plate 3 is provided in a processing container 2 whose inside is a processing space 1, and a wafer 5 (for example, a semiconductor wafer) that is an object to be processed in a state of being aligned with an opening 4 opened in the separation plate 3. ) Is placed. A heater H is disposed above the back surface of the wafer 5. A vacuum pump (not shown) for evacuating the processing space 1 is arranged, and air in the processing space 1 is sucked from the exhaust port 6.
[0040]
In order to supply a processing gas to the wafer 5, a gas ejection head 7 schematically shown in FIG. 1 is disposed in the processing space 1. A CVD (Chemical Vapor Deposition) process is performed on the surface of the wafer 5 by the processing gas ejected from the gas ejection head 7 to form an insulating oxide film, a wiring metal film, and the like. The illustrated gas ejection head 7 is of a type that ejects three types of processing gases A, B, and C, and a plurality of ejection portions 9 are arranged on a head surface 8 facing the wafer 5. As shown in FIG. 4 and FIG. 5 (A), a plurality of the ejection portions 9 are arranged on the head surface 8 at a predetermined interval.
[0041]
Next, the detailed structure of the gas ejection head 7 shown in FIG. Three types of processing gases A, B, and C are introduced into the gas ejection head 7, and a plurality of processing gases are ejected from a large number of ejection portions 9. The processing gases A and B are supplied to diffusion chamber units 10A and 10B described later, and the processing gas C is supplied to a diffusion chamber member 19C stacked on the diffusion chamber unit. The plurality of types of processing gases supplied in this way are guided to the ejection section 9 via the independent flow paths for the respective processing gases A, B, and C in the gas ejection head 7, and are then sent to the wafer W from there. It is jetted toward.
[0042]
Diffusion chamber units 10A and 10B are arranged in a stacked state in order to guide each processing gas A and B independently to the ejection section 9. Since both units 10A and 10B have substantially the same structure, the diffusion chamber unit 10A will be described in detail. One diffusion chamber unit, here 10A, is constituted by a diffusion chamber 12A formed by the diffusion space 11A and a partition member 13A for separating and independently separating the diffusion space 11A from the surrounding space. The partition member 13A is made of a thick circular stainless steel plate, and the space between the partition member 13B of the adjacent diffusion chamber unit 10B is a diffusion space 11A. As described above, the diffusion space 11A is a flat space formed by the flat inner wall surfaces 14A and 14B of the partition members 13A and 13B.
[0043]
The diffusion chamber 12A is also partitioned from the surrounding space by a coupling plate 15 in which the inner wall surfaces 14A and 14B and the diffusion chamber units 10A and 10B are integrated in a laminated state, and the diffusion chamber 12A is in a closed chamber state. Yes. In this example, the partition member 13A and the coupling plate 15 are separate members, but they may be integrated.
[0044]
The diffusion chamber unit 10B stacked on the lower side of the diffusion chamber unit 10A has the same structure as the diffusion chamber unit 10A as described above. Therefore, the diffusion space in each part of FIGS. 12B, 13B for the partition member, 14B for the inner wall surface, and 15 for the coupling plate.
[0045]
In order to supply the processing gas A to the diffusion space 11A, a processing gas introduction path 17A formed by the introduction pipe 16A is provided. The processing gas introduction path 17A extends from a gas supply pump (not shown), enters the diffusion space 11A, and an introduction port 18A opens at the center of the diffusion space 11A. The introduction port 18A opens at the end of the introduction pipe 16A toward the inner wall surface 14B of the diffusion space 11A opposite to the head surface 8.
[0046]
Also in the diffusion space 11B into which the processing gas B is introduced, a processing gas introduction path 17B similar to the processing gas introduction path 17A is provided, and the introduction port 18B has an inner wall surface 19B (on the opposite side to the head surface 8) ( It opens toward the inner wall surface of a diffusion chamber member 19C described later.
[0047]
Diffusion chamber members 19C are arranged in a stacked manner adjacent to the diffusion chamber unit 10B. The diffusion chamber member 19C is supplied with a processing gas C of a type different from the processing gases A and B, and an independent small volume diffusion chamber 20 is formed at a substantially central portion of the diffusion chamber member 19C and supplied from there. The flow path 21 is branched and communicates with the ejection portion 9 under an independent flow path configuration. The volume of the small volume diffusion chamber 20 is greatly reduced so as to be sufficiently smaller than the volume of the diffusion chambers 12A and 12B. The upper surface of the diffusion chamber member 19C is the inner wall surface 19B, which is one constituent surface that defines the diffusion chamber 12B.
[0048]
FIG. 3 shows a state of communication between the nozzle openings and / or nozzle tubes forming the ejection portion 9 and the diffusion spaces 11A and 11B and the supply flow path 21. The nozzle openings and / or nozzle tubes have a multiple structure arranged concentrically, and each nozzle opening and / or nozzle tube is connected to a different diffusion space 11A, 11B and supply flow path 21, respectively. The innermost nozzle tube 22 is connected to the supply channel 21 with its lower part fitted in the diffusion chamber member 19C. A large-diameter nozzle tube 23 concentrically disposed outside the nozzle tube 22 communicates with the diffusion space 11B in a state of being fitted to the partition member 13B. A nozzle opening 24 is disposed outside the large-diameter nozzle tube 23 and communicates with the diffusion space 11A. Each nozzle tube 22, 23 opens in the vicinity of the head surface 8.
[0049]
As shown in FIG. 6, the processing gas ejection portion 9 is open in the vicinity of the head surface 8, but the state of mixing and reaction of the processing gases A, B, and C sprayed onto the wafer 5 is changed. In order to improve further, it is advantageous to make the ejection part 9 protrude from the head surface 8. In FIG. 5B and FIG. 6, the nozzle tubes 22, 27, and 23 having small diameters, medium diameters, and large diameters are arranged in a triple so as to eject three kinds of processing gases. FIG. 6A shows the case where all the nozzle tubes 22, 27, and 23 have the same protruding length. (B) shows a case where the nozzle tubes 22, 27, 23 are cut obliquely and the end faces of the tubes are aligned on one virtual plane. (C) shows a case where the inner nozzle tube is shortened. (D) is a case where the ends of the nozzle tubes 22, 27, 23 are cut obliquely in the form as in (C).
[0050]
With the above configuration, the processing gas A supplied to the diffusion space 11A is dispersed in the diffusion space 11A and fills the diffusion chamber 12A, and is directed toward the nozzle opening 24 for the processing gas A. It is done. Further, the other types of processing gas B supplied to the other diffusion space 11B are also directed toward the nozzle tube 23 for the processing gas B through a similar flow process. In each of the diffusion chamber units 10A and 10B having the laminated structure as described above, each processing gas A and B is circulated toward the nozzle opening 24 and the nozzle pipe 23, so that the processing gas flow path toward the nozzle is routed. As a result, the flow resistance in each flow path is easily uniformed, and as a result, the amount of gas ejected from a large number of nozzles is made as uniform as possible, and stable film formation proceeds. Good film quality can be obtained. In addition, since such stable film formation proceeds, the time required for film formation is shortened, which is effective for improving productivity.
[0051]
The processing gases A and B that have flowed into the diffusion spaces 11A and 11B flow to a predetermined location, and are then turned toward the nozzle opening 24 and the nozzle tube 23 for the processing gas. Since the processing gas can be ejected from a large number of nozzles at the same time based on such a flow form, it is possible to avoid the problems of increase in channel resistance and pressure loss as described above. In addition, since the gas ejection head 7 is configured with the diffusion chamber units 10A and 10B having a laminated structure, the gas ejection head 7 can be easily downsized.
[0052]
The diffusion spaces 11A, 11B and the partition members 13A, 13B are arranged in a direction substantially along the head surface 8, and the diffusion spaces 11A, 11B are arranged with nozzle tubes 22, 23, nozzle openings 24, etc. at least on the head surface 8. This is a flat space that covers a wide area, and in this case, spreads to approximately the same area as the head surface. Further, since the partition members 13A and 13B are disposed in the direction substantially along the head surface 8, the diffusion spaces 11A and 11B are also disposed in the direction substantially along the head surface 8, accordingly. In addition, the diffusion spaces 11A and 11B, which are flat spaces, are wide enough to cover the arrangement range of the nozzle tubes 22, 23, the nozzle openings 24, and the like.
[0053]
For this reason, the processing gases A and B injected into the diffusion spaces 11A and 11B are immediately filled in the thickness direction of the flat space, and a gas flow component in the direction along the head surface 8 is strongly generated. Will be. That is, since the diffusion spaces 11A and 11B are flat like a narrow gap, the process gases A and B that have flowed in quickly fill the entire diffusion spaces 11A and 11B. Therefore, the processing gases A and B are actively diffused over the entire flat space by the flow component in the direction along the head surface 8, and are filled in the diffusion chambers 12A and 12B, and the processing in the diffusion chambers 12A and 12B is performed. Maintain gas pressure at a normal level.
[0054]
As a result, the processing gas supply pressure to each nozzle is sufficiently secured, and the amount of processing gas ejected onto the surface of the wafer 5 can be made as uniform as possible, which is the best processing for good film formation. A gas atmosphere is obtained. Then, by making the diffusion spaces 11A and 11B flat, the volume required for the flow of the processing gas C in each of the diffusion chamber units 10A and 10B and the diffusion chamber member 19C described later is remarkably reduced. Therefore, when the multilayer film is formed by changing the type of the processing gas, the residual gas is reduced and the type of the processing gas is quickly changed. For example, from the first film formation to the second film formation. The sharpness at the time of so-called multilayer film formation can be obtained well. Such an effect becomes even more remarkable with simplification of the flow path as described later.
[0055]
In addition to the shape of the flat diffusion spaces 11A and 11B as described above, the processing gas introduction passages 17A and 17B are arranged so as to improve the processing gas distribution, so that the processing gas is distributed over the entire diffusion spaces 11A and 11B. The processing gas is accurately distributed to the corresponding nozzle openings 24 and the nozzle tubes 23. Further, as shown in FIG. 7, the processing gas introduction passages 17A and 17B are radially branched as shown in FIG. 7A, or are bent like a ring as shown in FIG. , 11B can be distributed more uniformly over the entire area. Further, since the processing gases A and B from the introduction ports 18A and 18B are injected to the inner wall surfaces 14B and 19B forming the diffusion chambers 12A and 12B, the processing gases A and B collide with the inner wall surfaces 14B and 19B. As a result, a radial diffusion flow is formed, and the entire diffusion chambers 12A and 12B are immediately filled, and the processing gases A and B are accurately supplied to the corresponding nozzle openings 24 and nozzle tubes 23.
[0056]
The advantages of the diffusion chamber member 19C can be obtained synergistically in addition to the advantages of the diffusion chamber units 10A and 10B such as process gas distribution. That is, the processing gas C supplied to the small volume diffusion chamber 20 independent of the diffusion chamber units 10A and 10B passes through the supply flow path 21 branched from the small volume diffusion chamber 20 and corresponds to the processing gas C. Directed to tube 22. Since the small volume diffusion chamber 20 is set to be much smaller in volume than the diffusion chambers 12A and 12B, the processing gas C is temporarily held at a somewhat high pressure in the small volume diffusion chamber 20 having a small volume. Since the gas is supplied to the nozzle pipe 22 from this state, the supply gas pressure to the nozzle pipe 22 connected to the supply flow path 21 is kept high, and the process gas C is not sufficiently ejected through the diffusion chamber member 19C. Can be done without.
[0057]
Further, since the diffusion chamber member 19C is disposed adjacent to any one of the diffusion chamber units 10A and 10B, it is advantageous for making the gas ejection head 7 compact. Since the volume of the small volume diffusion chamber 20 is extremely small as described above, the volume necessary for the flow of the processing gas C in the diffusion chamber member 19C is remarkably reduced. Therefore, when the multilayer film is formed by changing the type of the processing gas, the residual gas is reduced and the type of the processing gas is quickly changed. For example, from the first film formation to the second film formation. The sharpness at the time of so-called multilayer film formation can be obtained well. Such an effect becomes even more remarkable with simplification of the flow path as described later.
[0058]
In addition, since the diffusion chamber member 19C having the small volume diffusion chamber 20 that has a small volume and can switch the processing gas more quickly and the diffusion chamber units 10A and 10B described above are provided in a mixed manner, for example, Diffusion chamber units 10A, 10B and diffusion chamber members are introduced such that a processing gas that requires more agile switching is introduced into diffusion chamber member 19C, and a processing gas that does not require so much switching agility is introduced into diffusion chamber units 10A, 10B. 19C can be used properly according to the type of processing gas, and a high-quality multilayer film can be formed with a low-cost apparatus.
[0059]
The flow paths of the processing gases A, B, and C obtained by the flow path configuration from the diffusion spaces 11A and 11B and the diffusion chamber member 19C stacked as described above open to the head surface 8 in a nozzle state. Since the plurality of the jetting portions 9 are arranged at a predetermined interval, the amount of the processing gas A, B, or C ejected from each jetting portion 9 is set to the workpiece. It can be made as uniform as possible, and the best processing gas atmosphere for good film formation can be obtained. Further, in the case where a slight difference occurs in the processing gas ejection amount of the plurality of ejection portions 9, the processing gas is ejected to the wafer 5 by increasing the arrangement density of the ejection portions 9 having a small ejection amount. The state can be optimized.
[0060]
The nozzle openings 24 and / or the nozzle tubes 22 and 23 arranged concentrically are connected to the diffusion spaces 11A and 11B or the supply flow channel 21 for introducing a plurality of different processing gases, respectively. The processing gases A, B, and C are ejected concentrically in an annular layer. Such ejection is performed in the vicinity of the head surface 8. Therefore, the various processing gases A, B, and C are mixed or reacted well for film formation at or near the locations where they are ejected from the nozzle openings 24 and / or the nozzle tubes 22 and 23. Further, since the nozzle tubes 22 and 23 are connected to the diffusion spaces 11A and 11B or the supply flow path 21, when the diffusion chamber units 10A and 10B are stacked and assembled, the nozzle tubes 22 and 23 are used for positioning. It functions like a knock pin, and the assembling work is simplified and the assembling accuracy is improved.
[0061]
The nozzle tube 22 located on the inner side is connected to the supply channel 21 arranged on the side far from the wafer 5, so that the processing gas C from the supply channel 21 on the far side is allowed to flow independently by this nozzle tube 22. It can be ejected as a road. Similarly, the outer nozzle tube 23 of the inner nozzle tube 22 is connected to the diffusion space 11B closer to the wafer 5 than the supply flow path 21, so that a different processing gas B is transferred to the outer side. The nozzle tube 23 can be ejected as an independent flow path. That is, since different processing gases A, B, and C are individually introduced into the laminated diffusion chamber units 10A and 10B and the diffusion chamber member 19C, the processing gases A and B are concentrically arranged in independent flow paths. It can be ejected from each nozzle tube. The nozzle opening 24 arranged on the outermost peripheral side communicates with the diffusion space 11A at the location closest to the wafer 5, from which the processing gas A is injected.
[0062]
In the gas ejection head 7, the diffusion chamber unit 10 </ b> A located at least on the wafer 5 side among the diffusion chamber units 10 </ b> A and 10 </ b> B or the diffusion chamber member 19 </ b> C and the diffusion chamber member 19 </ b> C located on the opposite side of the wafer 5 are respectively provided. The temperature is controlled independently. Therefore, as shown in FIGS. 2 and 5, a cooling pipe 25 that guides cooling water as a temperature control fluid is provided on the upper side of the partition member 13 </ b> A. The cooling pipe 25 is arranged with the surface portion of the partition member 13A along the head surface 8, and in order to cool the radiant heat from the wafer 5 to the head surface 8 as uniformly as possible, FIG. As shown, a curved channel is formed over the entire head surface 8.
[0063]
As a result, the diffusion chamber unit 10A located on the wafer 5 side is appropriately cooled with respect to the radiant heat from the wafer 5, so that the processing gas A is in the diffusion space 11A, in the ejection portion 9, that is, in the nozzle opening 24 or in the vicinity thereof. It is possible to prevent the decomposition or the film formation phenomenon from occurring. Further, by heating the diffusion chamber unit 10A until the diffusion chamber unit 10A is heated by the radiant heat from the wafer 5, a gas having a low dew point and being easily condensed at a low temperature is used as the processing gas A. Condensation of the processing gas in the flow path can be prevented, and film formation defects due to insufficient ejection of the processing gas A can be prevented.
[0064]
In addition, until the diffusion chamber unit 10A is heated by the radiant heat from the wafer 5, the diffusion chamber unit 10A can be heated by circulating hot water through the cooling pipe 25. In this way, when a gas having a low dew point and easily condensing at a low temperature is used as the processing gas A, the processing gas is prevented from condensing in the flow path, and film formation failure due to insufficient ejection of the processing gas A Can be prevented. Moreover, as a temperature control medium distribute | circulated to the cooling pipe 25, appropriate fluids, such as not only water but oil and gas, can be used.
[0065]
Also, in the diffusion chamber member 19C located on the side opposite to the wafer 5, the heating conduit 26 is configured to circulate inside the diffusion chamber member 19C in order to perform appropriate temperature control. Similarly to the cooling pipe 25 shown in FIG. 5 (A), the heating pipe 26 is also formed with a curved flow path over the entire interior of the diffusion chamber member 19C in order to uniformly heat the supply flow paths 21. doing. By doing so, the diffusion chamber member 19C that is difficult to receive radiant heat from the wafer 5 is subjected to appropriate temperature control, and therefore when the processing gases B and C having a low dew point are supplied to the supply flow path 21 and the diffusion space 11B. In addition, the condensation is prevented and a normal process gas can be supplied. As described above, the diffusion chamber unit 10A positioned on the wafer 5 side and the diffusion chamber member 19C positioned on the opposite side of the wafer 5 are independently controlled in temperature, so that each diffusion chamber unit 10A or The most suitable temperature control can be performed for the processing gases B and C corresponding to the diffusion chamber member 19C, and the properties of the injected processing gas are optimal for film formation.
[0066]
In addition, since the diffusion chamber member 19C has a small volume diffusion chamber 20 formed at a substantially central portion of the block-like member, when the temperature control is performed, the entire block-like member is stored in the internal processing gas. Heat transferred. For this reason, the temperature control effect with respect to the process gas which distribute | circulates an inside becomes very high, and it is effective when using the process gas for which severe temperature management is required. Since such a diffusion chamber member 19C and the above-described diffusion chamber units 10A and 10B are provided in a mixed manner, for example, a processing gas that requires more severe temperature management is introduced into the diffusion chamber member 19C. A processing gas that does not require such severe temperature control is introduced into the diffusion chamber units 10A and 10B. For example, the diffusion chamber units 10A and 10B and the diffusion chamber member 19C are properly used according to the type of the processing gas, thereby reducing the cost. A high-quality multilayer film can be formed.
[0067]
In addition, since such a diffusion chamber member 19C is disposed at a position opposite to the wafer 5 that is least susceptible to the influence of radiant heat from the wafer 5, the diffusion chamber member 19C is disposed against the processing gas flowing through the diffusion chamber member 19C. The temperature can be controlled more severely and appropriately without being affected by the radiant heat of the wafer 5.
[0068]
FIG. 8 shows a second embodiment of the gas ejection head in the film forming apparatus of the present invention.
[0069]
In FIG. 2, FIG. 3, etc., the nozzle opening 24 and / or the nozzle pipes 22, 23 have a multiple structure arranged concentrically, but this can be replaced with the form shown in FIG. That is, the pipelines that guide the processing gases A, B, and C to the ejection portion 9 are arranged close to each other in a state corresponding to the processing gases A, B, and C. The nozzle tube 22 is connected to the supply flow path 21 and extends to the head surface 8, the nozzle tube 23 communicates with the diffusion space 11B and extends to the head surface 8, and the nozzle tube 24A It communicates with the diffusion space 11 </ b> A and extends to the head surface 8. The nozzle tubes 22, 23, and 24A can be arranged close to each other in the form of an equilateral triangle as shown in FIG. 5B, and one straight line as shown in FIG. It is also possible to arrange them close to each other. Other than that, it is the same as that of the said embodiment, and the same code | symbol is attached | subjected to the same part.
[0070]
With the above-described configuration, the nozzle tubes 22, 23, 24A forming independent flow paths for the respective processing gases A, B, C are in close proximity to each other and penetrate through the diffusion chamber units 10A, 10B, and the diffusion chamber member 19C. Therefore, the flow path configuration of the processing gas can be achieved simply by arranging a straight nozzle tube, and the structure can be simplified and the advantages in terms of manufacturing can be ensured. Other than that, there exists an effect similar to the said embodiment.
[0071]
FIG. 9 shows a third embodiment of the gas ejection head in the film forming apparatus of the present invention.
[0072]
This embodiment shows a case where the flow shape and pressure state of the processing gas are improved by deforming the space shape of the diffusion space. In order to deform the space shape of the diffusion space 11A, the downward inner wall surface 14A of the partition member 13A is a concave taper surface, while the upward inner wall surface 14B of the partition member 13B is a convex taper surface. The space 11A has a space shape just like an umbrella. It should be noted that the same space shape is also deformed in the diffusion space 11B of the diffusion chamber units 10B stacked. Other than that, it is the same as that of each said embodiment, and attaches | subjects the same code | symbol to the same part.
[0073]
Therefore, the processing gas A ejected from the introduction port 18A is likely to flow along the inner wall surface 14B having a downward inclined surface, so that the gas flow to the peripheral portion of the diffusion space 11A having a low pressure is smoother. To be made. Moreover, since the inner wall surface 14A corresponding to the ceiling has a lower peripheral portion of the diffusion space 11A, the inner wall surface 14A functions to suppress the diffusion flow of the processing gas, and the height of the diffusion space 11A is increased. Since it becomes uniform in the direction, the pressure distribution in the diffusion space 11A tends to be uniform. As described above, the processing gas A is smoothly diffused over the entire diffusion space 11A by the function of the inner wall surfaces 14B and 14A with respect to the processing gas A, and the pressure is also maintained uniformly. Therefore, a processing gas with a sufficient flow rate is ejected from the nozzle opening 24 and the nozzle tube 23, and the film formation of the wafer 5 proceeds well. Other than that, there exists an effect similar to said each embodiment.
[0074]
FIG. 10 shows a fourth embodiment of the gas ejection head in the film forming apparatus of the present invention.
[0075]
In this embodiment, the diffusion chamber unit has three layers. In addition to the diffusion chamber units 10A and 10B described above, the diffusion chamber unit 10C is added, and the processing gas introduction channels 17A, 17B, and 17C are provided. The introduction pipes 16A, 16B, and 16C to be configured are embedded in the partition members 13A, 13B, and 13C. Therefore, in the diffusion spaces 11A, 11B, and 11C, only the nozzle openings 24 and / or the nozzle tubes 22 and 23 exist in a state of penetrating the spaces in the height direction of the respective diffusion spaces. Actually, the processing gas introduction paths 17A, 17B, and 17C are arranged so as not to substantially protrude into the diffusion spaces 11A, 11B, and 11C, and even a slight protrusion may hinder the processing gas diffusion phenomenon. Absent. The arrangement of the nozzle openings 24 and / or the nozzle tubes 22 and 23 is the same as that shown in FIG.
[0076]
Each partition member 13A, 13B, 13C is provided with a heater 28 for controlling the temperature of the processing gas in each diffusion space 11A, 11B, 11C. The heater 28 is arranged in an S shape, a meandering type, or the like in plan view in order to uniformly control the temperature of the processing gas in each diffusion space.
[0077]
Therefore, the processing gas introduced into the diffusion spaces 11A, 11B, and 11C spreads as a diffusion flow under the influence of the minimum obstacle, that is, the nozzle opening 24 and / or the nozzle tubes 22 and 23. The diffusion flow in the diffusion space expands as quickly and uniformly as possible throughout the entire area. Accordingly, the flow rate of the processing gas from each nozzle opening and / or nozzle tube is an appropriate injection. The obstacles in the diffusion spaces 11A, 11B, and 11C are only the nozzle opening 24 and / or the nozzle tubes 22 and 23, and parts are formed without the processing gas introduction passages 17A, 17B, and 17C protruding from the partition member. As a result, the parts can be simplified.
[0078]
Optimal temperature control can be performed for the processing gas in each of the diffusion spaces 11A, 11B, and 11C, and the properties of the processing gas can be appropriately maintained. In particular, since the entire gas ejection head is placed in a vacuum environment and the gas ejection head is in a vacuum insulation state, such temperature control for each partition member is extremely effective.
[0079]
【The invention's effect】
As described above, according to the film forming apparatus of the present invention, with the above-described configuration, one type of processing gas supplied to a specific diffusion space is dispersed in the diffusion space and filled in the diffusion chamber. , Directed towards the nozzle for the process gas. In addition, other types of processing gas supplied to other diffusion spaces are also directed toward the nozzle for the processing gas through a similar flow process. In each diffusion chamber unit having such a laminated structure, each process gas is circulated toward the nozzle, so that the structure of the process gas flow path toward the nozzle is simplified, and accordingly, in each flow path The flow path resistance is also easily uniformed. As a result, the amount of gas ejected from a large number of nozzles is made as uniform as possible, the film formation proceeds stably, and good film formation quality is obtained. In addition, since such stable film formation proceeds, the time required for film formation is shortened, which is effective for improving productivity.
[0080]
  The processing gas that has flowed into each diffusion space flows to a predetermined location, and is then redirected toward the nozzle for that processing gas. Since the processing gas can be ejected from a large number of nozzles on the basis of such a flow configuration, the gas flow path is bent in one place in this case, and the increase in flow path resistance and the pressure loss as described above. This problem can be avoided. In addition, since the gas ejection head is configured with a laminated structure of the diffusion chamber units, it is easy to reduce the size of the gas ejection head.In addition, since the introduction pipe forming the process gas introduction path is embedded in the partition member, the obstacle in the diffusion space is only the nozzle opening and / or the nozzle pipe, and the process gas introduction path is formed in the partition member. Since the parts can be formed without substantially protruding, the parts can be simplified.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a film forming apparatus according to an embodiment of the present invention.
FIG. 2 is a sectional view of a gas ejection head in the film forming apparatus.
FIG. 3 is a cross-sectional view illustrating a connection state between a diffusion space, a nozzle opening, and a nozzle tube.
FIG. 4 is a plan view showing a head surface of a gas ejection head.
5A is a plan view of a gas ejection head, and FIG. 5B is a plan view showing an opening of a nozzle tube.
FIG. 6 is a cross-sectional view showing a modified example of the nozzle tube.
FIG. 7 is a plan view showing a modification of the processing gas introduction path.
8A is a cross-sectional view of a gas ejection head according to a second embodiment, and FIGS. 8B and 8C are plan views showing the opening positions of nozzle openings.
FIG. 9 is a cross-sectional view showing a gas ejection head according to a third embodiment.
FIG. 10 is a cross-sectional view showing a gas ejection head according to a fourth embodiment.
FIG. 11 is a cross-sectional view showing a conventional film forming apparatus.
FIG. 12 is an exploded cross-sectional view of the block body of the film forming apparatus.
FIG. 13 is a cross-sectional view showing another conventional film forming apparatus.
[Explanation of symbols]
1 processing space
2 processing container
3 separator
4 opening
5 Wafer
H Heating heater
6 Exhaust port
7 Gas ejection head
8 Head surface
9 Spouting part
10A Diffusion chamber unit
10B Diffusion chamber unit
10C Diffusion chamber unit
11A diffusion space
11B Diffusion space
11C diffusion space
12A diffusion chamber
12B Diffusion chamber
12C Diffusion chamber
13A partition member
13B partition member
13C partition member
14A inner wall
14B inner wall
15 Bonding plate
16A introduction pipe
16B introduction pipe
16C introduction pipe
17A Process gas introduction path
17B Process gas introduction path
17C Process gas introduction path
18A inlet
18B inlet
18C inlet
19B inner wall
19C Diffusion chamber material
20 Small volume diffusion chamber
21 Supply flow path
22 Small diameter nozzle tube
23 Large diameter nozzle tube
24 Nozzle opening
24A nozzle tube
25 Cooling pipeline
26 Heating pipeline
27 Nozzle tube with medium diameter
28 Heater
60 processing container
61 Shower head body
62 prop
63 mounting table
64 Heating lamp
65 Transmission window
66 Upper block
67 Middle block
68 Lower block
69 Raw material gas supply path
69A fork
69B fork
69C Gas outlet
70 Reducing gas supply path
70B fork
70C gas outlet
71 Cooling channel
72 Heating means
73 Exhaust passage
74 Diffusion chamber
75 Diffusion chamber
76 First supply pipe
77 Horizontal diffuser
78 Second supply pipe
79 Horizontal diffuser

Claims (12)

A film forming apparatus having a gas ejection head for supplying a plurality of types of processing gas in a processing space, and forming a film on a surface of an object to be processed by the processing gas,
The gas ejection head is provided with a number of nozzles for independently ejecting each processing gas on the head surface facing the workpiece,
The gas ejection head includes a plurality of diffusion spaces into which the processing gases are independently introduced and a partition member that separates and separates the diffusion spaces, and is disposed in a diffusion chamber of the processing gas into which the diffusion spaces are introduced. The formed diffusion chamber unit exists in a stacked state,
A processing gas is supplied from each diffusion space to a nozzle corresponding to each processing gas, and an introduction pipe forming the processing gas introduction path is embedded in the partition member. Deposition device.   2. The diffusion space and the partition member are arranged in a direction substantially along the head surface, and the diffusion space is a flat space extending in an area covering at least a range where the nozzle is arranged on the head surface. Film forming equipment.   A processing gas introduction path for independently introducing each processing gas is disposed in each diffusion space, and the processing gas introduction path has a processing gas introduced from the processing gas introduction path into the diffusion space. The film forming apparatus according to claim 1, wherein the film forming apparatus is arranged so as to be distributed as uniformly as possible over the entire area.   The film forming apparatus according to claim 3, wherein the introduction port for introducing the processing gas into the diffusion space from the processing gas introduction path opens toward the inner wall surface of the diffusion chamber opposite to the head surface.   The gas ejection head includes a small volume diffusion chamber that is set to be sufficiently smaller than the diffusion chamber by introducing a processing gas independently of the diffusion chamber unit, and a small volume branched from the small volume diffusion chamber. A diffusion chamber member provided with a supply flow path for supplying a processing gas to a nozzle corresponding to the processing gas introduced into the volume diffusion chamber, wherein the diffusion chamber member is adjacent to any one of the diffusion chamber units. The film-forming apparatus as described in any one of Claims 1-4 arrange | positioned at the laminated form.   6. The process according to claim 1, wherein a plurality of processing gas ejection portions provided with nozzles for ejecting a plurality of different types of processing gases are arranged at predetermined intervals on the head surface. The film-forming apparatus of description.   The ejection part has a multiple structure in which nozzle openings and / or nozzle tubes for independently ejecting different types of different processing gases are arranged concentrically, and the nozzle tube has an opening in the vicinity of the head surface, The film forming apparatus according to claim 6, wherein the film forming apparatus communicates with a diffusion space or a supply channel into which a processing gas ejected by the nozzle tube is introduced.   The film forming apparatus according to claim 7, wherein the nozzle tube communicates with a diffusion space or a supply flow channel which is disposed on a side farther from the object to be processed as the nozzle tube located inside the multiple structure.   In the gas ejection head, among each diffusion chamber unit or diffusion chamber member, at least the diffusion chamber unit or diffusion chamber member positioned on the workpiece side, and the diffusion chamber unit or diffusion chamber member positioned on the opposite side of the workpiece. The film forming apparatus according to claim 1, wherein the temperature is controlled independently of each other. The composition according to any one of claims 1 to 9, wherein only the nozzle opening and / or the nozzle tube are present in the diffusion space of the diffusion chamber unit in a state of penetrating the space in the height direction of the diffusion space. Membrane device.   The film forming apparatus according to claim 1, wherein the processing gas introduction path is disposed so as not to substantially protrude into the diffusion space. Film forming apparatus according to any one of claims 1 to 1 1 adapted to the temperature control for each of the partition members.

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