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JP3681925B2 - Displacement measuring device - Google Patents
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JP3681925B2 - Displacement measuring device - Google Patents

Displacement measuring device Download PDF

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Publication number
JP3681925B2
JP3681925B2 JP19201399A JP19201399A JP3681925B2 JP 3681925 B2 JP3681925 B2 JP 3681925B2 JP 19201399 A JP19201399 A JP 19201399A JP 19201399 A JP19201399 A JP 19201399A JP 3681925 B2 JP3681925 B2 JP 3681925B2
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Japan
Prior art keywords
light
optical waveguide
displacement measuring
face
terrace
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JP19201399A
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JP2001021314A (en
Inventor
廉士 澤田
栄治 日暮
高廣 伊藤
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NTT Inc
NTT Inc USA
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Nippon Telegraph and Telephone Corp
NTT Inc USA
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Description

【0001】
【発明の属する技術分野】
本発明は、半導体レーザのコーヒレンシ(可干渉性)を利用した位置決めあるいは変位センサ等の変位測定装置に関するものである。
【0002】
【従来の技術】
従来のこの種の方法が対象とする光学デバイスは我々が発表している論文「超小型ハイブリッドマイクロエンコーダ」1998年(平成10年)秋季第59回応用物理学会講演会予稿集NO.3、16a−ZC−1、pp.879ならびに、特願平9−82821号「変位測定装置」に記載されている。
【0003】
図6は従来の変位測定装置であり、ベース基板1上の電極およびはんだ形成パターン4に設けられた発光素子の半導体レーザ5、光導波路3、信号(A,B相信号)検出用ならびにモニタリング用などの受光素子である検出用フォトダイオード6、および外部ミラー7から構成されている。これらは受光発光素子ならびに導波路のコア高さが一致するようにしてあり、外部に反射ミラー7からなるスケールを有し、そのスケールの変位、移動量、あるいは回転角などを測定していた。この種の従来の光学装置は非常に小型で小さなモータやアクチュエータに内蔵し、回転角あるいは移動量を高分解能で検出できるという優れた特長があったものの、外部反射ミラーからの反射光が直接あるいは光導波路のコアを通過して発光素子へ再度入射するために、より正確な外部ミラーの変位等の測定に支障をきたすことが分かった。
【0004】
【発明が解決しようとする課題】
本発明は上記の事情に鑑みてなされたもので、戻り光がないようにし、且つ装置全体の寸法が大きくならない構成にした変位測定装置を提供することを目的とする。
【0005】
【課題を解決するための手段】
上記目的を達成するために本発明は、ベース基板上に、可干渉光発光素子、受光素子ならびに光導波路とを一体化構成した変位測定装置において、前記受光素子の検出部が前記光導波路の出射端面より高い位置にあり、前記光導波路の出射端面から出射する中心の最も光強度が大きいビームが外部に設けた反射ミラーに反射後前記受光素子の検出部に到達するように前記反射ミラーに対して前記ベース基板を含む前記変位測定装置を傾けてあり、前記出射端面から出射した中心から外れ広がっていくビームが前記外部反射ミラーに反射し再び前記出射端面に戻ることがないように、前記可干渉光発光素子あるいは前記光導波路の出射端面の前近傍に有するテラスで遮断するようにしたことを特徴とするものである。
【0007】
また本発明は、前記変位測定装置において、可干渉光発光素子が半導体レーザであることを特徴とするものである。
【0008】
また本発明は、前記変位測定装置において、受光素子がフォトダイオードであることを特徴とするものである。
【0009】
すなわち、発光素子あるいは光導波路からの光出射端面の前に出射高さの近傍の高さの遮光用のテラスを形成し、さらにベース基板を傾け、発光素子の出射高さと受光素子の受光部の高さを一致させないことにより、戻り光がなくなり、そのため、より正確な測定が可能になる。又、遮光テラスの導入により、戻り光を防止するためのベース基板の傾き角を大幅に減少させることができる。
【0010】
【発明の実施の形態】
以下図面を参照して本発明の実施形態例を詳細に説明する。
【0011】
[実施形態例1]
図1〜4は本発明の実施形態例1を説明する図である。図1に示すように、ベース基板1上に光導波路3、電極およびはんだ形成パターン4を形成し、可干渉光発光素子の半導体レーザ5、受光素子の検出用フォトダイオード6をボンディングして一体化構成にする。7は外部ミラーである。
【0012】
すなわち、光導波路3から出射した拡散(広がりをもつ)可干渉レーザの外部ミラー7から反射した光を検出し、その検出強度と外部ミラー7との移動量の関係を利用して、検出強度からミラー7の移動量を求める変位計測デバイスである。 図2に示すように、前記ベース基板1には遮光用のテラス2を形成する。このテラス2の高さは半導体レーザ5あるいは光導波路3の出射端面の前近傍になるようにしておく。本実施形態例1ではベース基板1には(100)方位のシリコンを、KOHの水溶液で異方性エッチングして形成し、その後0.5μmの熱酸化膜を形成したものを使用する。
【0013】
図3に示すように、前記半導体レーザ5あるいは前記光導波路3の出射端面部の中心の高さが一致するようにする。検出用フォトダイオード6は受光部61が光導波路3の出射端面部より上になるようにしてボンディングする。本実施形態例1では光導波路3のコア31および半導体レーザ5の発光部の中心の高さh1はほぼ一致しており6.5μmである。また、検出用フォトダイオード6の受光部61の高さh2は約200μmである。
【0014】
スケールの外部ミラー7に対してベース基板1を含むエンコーダ本体を角度α傾けて設置する。その最適の傾け角度αはα=(1/2)* Arctan{(h2−h1)/d1}で与えられる。この最適な角度αでは光導波路3の出射端面から出射する中心の最も光強度大きいビーム8が外部ミラー7で反射後検出用フォトダイオード6の受光部61に到達する。ただし、d1は外部ミラー7から検出用フォトダイオード6までの距離である。本実施形態例1で用いた変位測定装置では、d1=1330μmであるから、α=4度傾けた。戻り光を防止する効果を有する遮光用のテラス2の高さh3が4.5μm、すなわち、光導波路3のコア31と下部クラッド32の境界より下に2μmのとき、テラス2の長さ(光導波路3の出射端面からテラス2の前面までの距離)d2が100μmあれば最適傾き角度αが4度のときにも遮光ができ戻り光を防止できる。傾き角度αの場合、光導波路3の出射端面から出射するビームで中心から外れ広がっていくビームのうち広がり角度γが角度α近傍のビームは外部ミラー7で反射後再度光導波路3の出射端面に戻ってくる可能性がある。従って、角度αと同じ位かそれ以上の広がり角度で広がっていくビーム9をテラス2で遮蔽することにより、外部ミラー7で反射して再度光導波路3の端面に戻ってくる光を遮断できる。
【0015】
このテラス2は長いほど、光導波路3のコア31と下部クラッド32の境界ぎりぎりまでテラス2を高くすることにより大幅に改善できる。テラス2の高さh3を6.5μmすなわち、光導波路3のコア31と下部クラッド32の境界まで高くして、テラス2の長さd2を200μmまで長くすると、戻り光を防止するに必要なベース基板1の傾き角度αを1.5程度まで小さくすることができる。もし、遮光用のテラスを導入しなければ、図4に示すように、完全に戻り光を防止するために必要な傾き角度αはビーム垂直方向広がり角度(全値半角)γと等しい10度程度と途方もなく大きな角度になってしまう。
【0016】
[実施形態例2]
図5は本発明の実施形態例2であり、光導波路を有しない同様の変位を計測する変位測定装置である。図5中、図1と同一部分は同一符号を付してその説明を省略する。光導波路からの出射光でなく、発光素子である半導体レーザ5からの出射光を直接用いる場合、垂直方向広がり角度(全値半角)γは30〜50と、実施形態例1の光導波路のある場合の3〜5倍にも広がる。しかし、遮光の効果は出射端前面に形成したテラス2の高さと長さのみで決定され、半導体レーザ5からの出射光の広がり角度には無関係であることが分かった。
【0017】
以上、実施形態例1,2では、ビームの広がりを利用した変位測定装置について、戻り光防止の方法を述べているが、基本的にはベース基板上に発光素子と受光素子を有する変位測定装置において有効であることはいうまでもないことである。また、遮光用のテラスをシリコンの異方性エッチングを使用して作製したが、他の金属膜を堆積する方法などによっても同様な効果が期待できるのは明らかなことである。
【0018】
【発明の効果】
以上述べたように本発明によれば、最適のベース傾き角で遮光を実現できるために、強度が大きい、ノイズの小さい信号を簡単な構造で寸法もそれほど大きくすることなく(遮光用のテラスの長さ分大きくなるものの、そのテラスの長さは、高々200μmと小さいため)実現できた。
【図面の簡単な説明】
【図1】本発明の実施形態例1を示す斜視図である。
【図2】本発明の実施形態例1における遮光用のテラスを示す斜視図である。
【図3】本発明の実施形態例1の作用を示す説明図である。
【図4】本発明の実施形態例1を説明するための斜視図である。
【図5】本発明の実施形態例2を示す斜視図である。
【図6】従来の変位計測デバイスを示す斜視図である。
【符号の説明】
1 ベース基板
2 遮光用のテラス
3 光導波路
31 コア
32 下部クラッド
4 電極およびはんだ形成パターン
5 半導体レーザ(発光素子)
6 検出用フォトダイオード(受光素子)
61 検出用フォトダイオード(受光素子)の受光部
7 外部ミラー
8 導波路出射端面から出射する中心の最も光強度大きいビーム
9 αと同じ位かそれ以上の広がり角度で広がっていくビーム
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a displacement measuring apparatus such as a positioning or displacement sensor using the coherency (coherence) of a semiconductor laser.
[0002]
[Prior art]
The optical device that this type of conventional method is the target is the paper “We have published a paper“ Ultra-compact hybrid micro-encoder ”. 3, 16a-ZC-1, pp. 879, and Japanese Patent Application No. 9-82821 “Displacement Measuring Device”.
[0003]
FIG. 6 shows a conventional displacement measuring apparatus for detecting a semiconductor laser 5 of a light emitting element provided on an electrode on a base substrate 1 and a solder formation pattern 4, an optical waveguide 3, signals (A and B phase signals) and monitoring. The detection photodiode 6 is a light receiving element such as the above, and an external mirror 7. These are configured so that the core heights of the light receiving light emitting element and the waveguide coincide with each other, and have a scale composed of the reflection mirror 7 on the outside, and measure the displacement, movement amount, rotation angle, etc. of the scale. This type of conventional optical device is very small and built in a small motor or actuator, and has the excellent feature of being able to detect the rotation angle or the amount of movement with high resolution, but the reflected light from the external reflection mirror is directly or directly It has been found that since the light passes through the core of the optical waveguide and enters the light emitting element again, the measurement of the displacement of the external mirror and the like is hindered.
[0004]
[Problems to be solved by the invention]
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a displacement measuring apparatus configured to prevent return light and not to increase the overall size of the apparatus.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a displacement measuring apparatus in which a coherent light emitting element, a light receiving element, and an optical waveguide are integrally formed on a base substrate, wherein the detection unit of the light receiving element is emitted from the optical waveguide. The beam having the highest light intensity at the center exiting from the exit end face of the optical waveguide is reflected by the reflection mirror provided outside and reaches the detection unit of the light receiving element after being reflected by the reflection mirror. the Yes tilt the displacement measuring device comprising a base substrate, so that the beam which spreads out from the center emitted from the exit end face is prevented from returning to the reflected external reflection mirror the exit end face again Te, the accepted The interference light emitting element or the terrace provided in the vicinity of the front end face of the optical waveguide is cut off .
[0007]
In the displacement measuring apparatus, the coherent light emitting element is a semiconductor laser.
[0008]
According to the present invention, in the displacement measuring apparatus, the light receiving element is a photodiode.
[0009]
That is, a light-shielding terrace having a height close to the emission height is formed in front of the light emission end face from the light-emitting element or the optical waveguide, and the base substrate is tilted so that the emission height of the light-emitting element and the light-receiving portion of the light-receiving element By not matching the heights, there is no return light, thus allowing more accurate measurements. Moreover, the inclination angle of the base substrate for preventing the return light can be greatly reduced by introducing the light shielding terrace.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below in detail with reference to the drawings.
[0011]
[Embodiment 1]
1 to 4 are diagrams for explaining a first embodiment of the present invention. As shown in FIG. 1, an optical waveguide 3, electrodes and a solder formation pattern 4 are formed on a base substrate 1, and a semiconductor laser 5 as a coherent light emitting element and a detection photodiode 6 as a light receiving element are bonded and integrated. Make the configuration. Reference numeral 7 denotes an external mirror.
[0012]
That is, the light reflected from the external mirror 7 of the diffusing (expanding) coherent laser emitted from the optical waveguide 3 is detected, and the relationship between the detected intensity and the amount of movement of the external mirror 7 is used to determine the detected intensity. This is a displacement measuring device for obtaining the amount of movement of the mirror 7. As shown in FIG. 2, a light-shielding terrace 2 is formed on the base substrate 1. The height of the terrace 2 is set to be in the vicinity of the front of the emission end face of the semiconductor laser 5 or the optical waveguide 3. In the first embodiment, the base substrate 1 is formed by forming (100) oriented silicon by anisotropic etching with an aqueous solution of KOH and then forming a 0.5 μm thermal oxide film.
[0013]
As shown in FIG. 3, the heights of the centers of the emission end faces of the semiconductor laser 5 or the optical waveguide 3 are made to coincide with each other. The detection photodiode 6 is bonded so that the light receiving portion 61 is above the emission end face portion of the optical waveguide 3. In the first embodiment, the height h1 of the core 31 of the optical waveguide 3 and the center of the light emitting portion of the semiconductor laser 5 are substantially the same and is 6.5 μm. Further, the height h2 of the light receiving portion 61 of the detection photodiode 6 is about 200 μm.
[0014]
The encoder body including the base substrate 1 is installed at an angle α with respect to the external mirror 7 of the scale. The optimum tilt angle α is given by α = (1/2) * Arctan {(h2−h1) / d1}. At this optimum angle α, the beam 8 having the highest light intensity emitted from the emission end face of the optical waveguide 3 reaches the light receiving portion 61 of the detection photodiode 6 after reflection by the external mirror 7. Here, d1 is the distance from the external mirror 7 to the detection photodiode 6. In the displacement measuring apparatus used in the first embodiment, since d1 = 1330 μm, α is inclined by 4 degrees. When the height h3 of the light-shielding terrace 2 having the effect of preventing return light is 4.5 μm, that is, 2 μm below the boundary between the core 31 and the lower cladding 32 of the optical waveguide 3, the length of the terrace 2 (light guide If the distance d2 from the emission end face of the waveguide 3 to the front face of the terrace 2 is 100 μm, light can be shielded even when the optimum inclination angle α is 4 degrees, and return light can be prevented. In the case of the inclination angle α, of the beams emitted from the exit end face of the optical waveguide 3 and spreading out of the center, the beam having the spread angle γ of the vicinity of the angle α is reflected by the external mirror 7 and again on the exit end face of the optical waveguide 3. May come back. Therefore, by shielding the beam 9 spreading at an angle equal to or larger than the angle α with the terrace 2, it is possible to block the light reflected by the external mirror 7 and returning to the end face of the optical waveguide 3 again.
[0015]
The longer the terrace 2 is, the greater the improvement can be achieved by raising the terrace 2 to the borderline between the core 31 and the lower clad 32 of the optical waveguide 3. If the height h3 of the terrace 2 is 6.5 μm, that is, the height of the terrace 2 is increased to the boundary between the core 31 and the lower clad 32 and the length d2 of the terrace 2 is increased to 200 μm, the base necessary for preventing the return light The inclination angle α of the substrate 1 can be reduced to about 1.5. If a terrace for light shielding is not introduced, as shown in FIG. 4, the tilt angle α necessary to completely prevent the return light is about 10 degrees equal to the beam vertical spread angle (full value half angle) γ. And it becomes a tremendous big angle.
[0016]
[Embodiment 2]
FIG. 5 shows a second embodiment of the present invention, which is a displacement measuring device that measures the same displacement without an optical waveguide. In FIG. 5, the same parts as those in FIG. When light emitted from the semiconductor laser 5, which is a light emitting element, is used directly instead of light emitted from the optical waveguide, the vertical spread angle (full value half angle) γ is 30 to 50, which is the optical waveguide of the first embodiment. Spread 3 to 5 times the case. However, it has been found that the light shielding effect is determined only by the height and length of the terrace 2 formed on the front surface of the emission end, and is independent of the spread angle of the emitted light from the semiconductor laser 5.
[0017]
As described above, in the first and second embodiments, the method for preventing the return light is described for the displacement measuring device using the spread of the beam. Basically, the displacement measuring device having the light emitting element and the light receiving element on the base substrate. Needless to say, this is effective. Further, although the light-shielding terrace is manufactured by using anisotropic etching of silicon, it is obvious that the same effect can be expected by a method of depositing another metal film.
[0018]
【The invention's effect】
As described above, according to the present invention, since light can be shielded at an optimum base tilt angle, a signal having high strength and low noise can be realized with a simple structure and a large size (so that the size of the light shielding terrace can be reduced) Although the length of the terrace was large, it was realized because the length of the terrace was as small as 200 μm.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a first embodiment of the present invention.
FIG. 2 is a perspective view showing a light-shielding terrace according to Embodiment 1 of the present invention.
FIG. 3 is an explanatory diagram showing an operation of the first embodiment of the present invention.
FIG. 4 is a perspective view for explaining Embodiment 1 of the present invention.
FIG. 5 is a perspective view showing a second embodiment of the present invention.
FIG. 6 is a perspective view showing a conventional displacement measuring device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Base substrate 2 Terrace for light shielding 3 Optical waveguide 31 Core 32 Lower clad 4 Electrode and solder formation pattern 5 Semiconductor laser (light emitting element)
6 Photodiode for detection (light receiving element)
61 Light-receiving part 7 of detection photodiode (light-receiving element) External mirror 8 Beam 9 radiating from the waveguide exit end face The beam 9 having the highest light intensity at the center.

Claims (3)

ベース基板上に、可干渉光発光素子、受光素子ならびに光導波路とを一体化構成した変位測定装置において、
前記受光素子の検出部が前記光導波路の出射端面より高い位置にあり、
前記光導波路の出射端面から出射する中心の最も光強度が大きいビームが外部に設けた反射ミラーに反射後前記受光素子の検出部に到達するように前記反射ミラーに対して前記ベース基板を含む前記変位測定装置を傾けてあり、
前記出射端面から出射した中心から外れ広がっていくビームが前記外部反射ミラーに反射し再び前記出射端面に戻ることがないように、前記可干渉光発光素子あるいは前記光導波路の出射端面の前近傍に有するテラスで遮断するようにしたことを特徴とする変位測定装置。
In a displacement measuring device in which a coherent light emitting element, a light receiving element and an optical waveguide are integrated on a base substrate,
The detection part of the light receiving element is at a position higher than the emission end face of the optical waveguide,
The base substrate with respect to the reflection mirror includes the base substrate so that a beam having the highest light intensity at the center emitted from the emission end face of the optical waveguide is reflected by the reflection mirror provided outside and reaches the detection unit of the light receiving element. The displacement measuring device is tilted,
Near the front of the coherent light emitting element or the output end face of the optical waveguide so that the beam exiting from the center exiting from the exit end face is reflected by the external reflection mirror and does not return to the exit end face again. Displacement measuring device characterized in that it is blocked by a terrace .
可干渉光発光素子が半導体レーザであることを特徴とする請求項1記載の変位測定装置。2. The displacement measuring apparatus according to claim 1 , wherein the coherent light emitting element is a semiconductor laser. 受光素子がフォトダイオードであることを特徴とする請求項1又は2記載の変位測定装置。 3. The displacement measuring apparatus according to claim 1 , wherein the light receiving element is a photodiode.
JP19201399A 1999-07-06 1999-07-06 Displacement measuring device Expired - Lifetime JP3681925B2 (en)

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