JP3703281B2 - Substrate processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus that performs predetermined processing on a substrate while exhausting atmospheric gas in a rotation processing unit to the outside.
[0002]
[Prior art]
A substrate processing apparatus is used to supply a processing liquid to a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, or a glass substrate for an optical disk to perform a predetermined process.
[0003]
FIG. 4 is a schematic configuration diagram of a conventional rotary coating apparatus that is an example of a substrate processing apparatus. The rotary coating apparatus includes a substrate holding unit 1 and a rotation motor 2 for holding and rotating the substrate W in a horizontal posture. A hollow cup 3 is provided around the substrate W and the substrate holding unit 1 to prevent the processing liquid supplied to the substrate W from being scattered around.
[0004]
An opening 3 a is provided in the upper part of the hollow cup 3, and a drain port 3 b for discharging the processing liquid scattered from the substrate W and an exhaust port 3 c for discharging atmospheric gas in the cup 3 are provided in the lower part. Is provided. Further, an exhaust pipe 4 is connected to the exhaust port 3 c of the cup 3. The downstream end of the exhaust pipe 4 is connected to a utility connection port of a factory where the rotary coating apparatus is installed.
[0005]
A factory exhaust power facility includes an intake source such as a pump, and is connected to various substrate processing apparatuses installed in the factory via pipes. The exhaust capacity of the exhaust power facility is uniformly determined by the capacity of the intake source. For this reason, the amount of exhaust gas distributed to the rotary coating apparatus is constant.
[0006]
At the time of spin coating in the spin coater of FIG. 4, a clean air flow 10 is sent to the surface of the substrate W through the opening 3 a of the cup 3. In this state, the resist solution is discharged onto the substrate W and spread by the rotation of the substrate W.
[0007]
A mist (spray) of a processing solution such as a resist that scatters from the surface of the substrate W is carried away toward the outer periphery of the substrate W by a clean air flow 10. Then, the air flow 10 containing mist becomes an exhaust flow 10a, descends in the cup 3, passes through the exhaust pipe 4, and is discharged from the utility connection port to the exhaust power facility.
[0008]
[Problems to be solved by the invention]
However, if the fixed exhaust amount distributed to the rotary coating apparatus is too large, the outer peripheral portion of the resist film spread on the entire surface of the substrate W is dried in the inner peripheral portion in the film forming process after the resist solution is supplied. The resist is easily deposited on the outer peripheral side. As a result, there arises a disadvantage that the film thickness of the resist film is not uniform between the outer peripheral portion and the inner peripheral portion of the substrate W.
[0009]
In addition, if a certain exhaust amount distributed to the rotary coating apparatus is too small, the resist solution and the mist of the rinse solution are sufficiently discharged in the step of discharging the resist solution to the substrate W and the step of discharging the rinse solution. I can't do that. This causes a disadvantage that the mist adheres to the front surface or the back surface of the substrate and contaminates the substrate W.
[0010]
The objective of this invention is providing the substrate processing apparatus which can adjust the exhaust_gas | exhaustion amount from a rotation process part according to the process process of a board | substrate.
[0011]
[Means for Solving the Problems and Effects of the Invention]
A substrate processing apparatus according to a first aspect of the present invention is a substrate processing apparatus that is connected to an intake source for exhaust and performs predetermined processing on a substrate, and includes a rotation holding unit that rotates the substrate while holding the substrate, and a rotation holding unit A rotation processing unit including a processing liquid discharge unit that discharges a processing liquid onto a held substrate, an exhaust pipe that guides atmospheric gas in the rotation processing part to an intake source, and a flow rate of the atmospheric gas in the exhaust pipe are adjusted. A flow rate adjusting unit; and a control unit that controls the flow rate adjusting unit so that the flow rate of the atmospheric gas is higher than that before the discharge when the processing liquid is discharged by the processing liquid discharging unit. The control means includes a coating liquid discharge nozzle that discharges the coating liquid, and the control means has a flow rate of the atmospheric gas after a predetermined time has elapsed from the completion of the discharge of the coating liquid by the coating liquid discharge nozzle before the coating liquid is discharged by the coating liquid discharge nozzle. Atmosphere To be lower than the flow rate is to control the flow rate adjusting means.
[0012]
In the substrate processing apparatus according to the first aspect of the invention, the substrate is subjected to predetermined processing while the atmosphere in the rotation processing unit is exhausted by an external intake source to keep the atmosphere of the rotation processing unit in a clean state. When the processing liquid is discharged, the discharged processing liquid is scattered from the substrate and a large amount of mist is generated. Therefore, the flow rate adjusting means increases the flow rate of the atmospheric gas under the control of the control means, so that a large amount of mist is discharged and the inside of the rotation processing unit is maintained in a clean atmosphere. This prevents the substrate from being contaminated by mist adhesion even when the processing liquid is discharged.
[0013]
Further, after the coating liquid is discharged onto the substrate, the coating liquid is spread on the surface of the substrate by rotating the substrate. There is little generation of mist from the substrate at this time, and the atmosphere in the rotation processing section can be kept clean even if the flow rate of the atmospheric gas is reduced. Furthermore, by reducing the flow rate of the atmospheric gas, it is possible to prevent the coating film from becoming uneven between the outer peripheral portion and the inner peripheral portion of the substrate, and to form the coating film uniformly. Can do.
[0014]
In the substrate processing apparatus according to the second invention, in the configuration of the substrate processing apparatus according to the first invention, the control means maintains the flow rate of the atmospheric gas from the completion of the discharge of the coating liquid by the coating liquid discharge nozzle until a predetermined time has elapsed. After that, the flow rate adjusting means is controlled so that the flow rate of the atmospheric gas decreases.
[0015]
In this case, the coating liquid discharged from the coating liquid discharge nozzle is scattered not only at the time of discharge but also from the substrate outward for a predetermined time after the completion of the discharge, and mist is thereby generated continuously. Therefore, by maintaining the flow rate of the atmospheric gas high until the predetermined time has elapsed after the discharge of the coating liquid is completed by the flow rate adjusting means, it is possible to sufficiently discharge the mist and maintain the rotation processing unit in a clean atmosphere.
[0016]
A substrate processing apparatus according to a third aspect of the present invention is the substrate processing apparatus according to the first or second aspect of the invention, wherein the processing liquid discharge means further includes a rinsing liquid discharge nozzle for discharging a rinsing liquid as the processing liquid, The means controls the flow rate adjusting means so that the flow rate of the atmospheric gas when the rinse liquid is discharged by the rinse liquid discharge nozzle is higher than that before the rinse liquid is discharged.
[0017]
In this case, when the rinse liquid is discharged from the rinse liquid discharge nozzle, the discharged rinse liquid is scattered from the substrate, and the amount of mist generated increases. Therefore, the flow rate adjusting means discharges mist increased by increasing the flow rate of the atmospheric gas under the control of the control means, and the inside of the rotation processing unit is maintained in a clean atmosphere. Thereby, at the time of discharging the rinsing liquid, the mist of the rinsing liquid can adhere to the coating film formed on the substrate surface, thereby preventing the coating film from being contaminated.
[0018]
The substrate processing apparatus according to a fourth aspect of the present invention is the substrate processing apparatus according to the third aspect of the present invention, wherein the control means adjusts the flow rate so that the flow rate of the atmospheric gas decreases after the rinse liquid discharge by the rinse liquid discharge nozzle is completed. It controls the means.
[0019]
In this case, after the rinse liquid is discharged, scattering of the rinse liquid from the substrate is reduced, and the mist can be sufficiently discharged even if the flow rate of the atmospheric gas is reduced. In addition, by reducing the flow rate of the atmospheric gas, it is possible to reduce the time that imposes a burden on the exhaust amount of the exhaust system of another substrate processing apparatus connected to the common intake source with the substrate processing apparatus.
[0020]
The substrate processing apparatus according to a fifth aspect of the present invention is the substrate processing apparatus according to the fourth aspect of the present invention, wherein the control means is configured so that the flow rate of the atmospheric gas after the rinsing liquid discharge nozzle completes the rinsing liquid discharge nozzle The flow rate adjusting means is controlled so as to be higher than the flow rate of the atmospheric gas before the rinse liquid is discharged.
[0021]
In this case, the substrate can be rinsed while maintaining the atmosphere in the rotation processing section in a clean state by appropriately adjusting the flow rate of the atmosphere gas before, during and after the rinse liquid is discharged.
[0022]
Sixth substrate processing apparatus according to the present invention, in the configuration of a substrate processing apparatus according to the first invention, the treatment liquid ejection means further comprises a rinsing liquid discharge nozzle for discharging a rinsing liquid as treatment solution, the coating solution discharge After discharging the coating liquid by the nozzle, the rinsing liquid is discharged by the rinsing liquid discharge nozzle, and the control means has a higher flow rate of the atmospheric gas when discharging the coating liquid by the coating liquid discharging nozzle than before discharging the coating liquid, The flow rate adjusting means is controlled so that the flow rate of the atmospheric gas when the rinsing liquid is discharged by the rinsing liquid discharge nozzle is higher than before the rinsing liquid is discharged.
[0023]
In this case, when the coating liquid is discharged from the coating liquid discharge nozzle and when the rinsing liquid is discharged from the rinsing liquid, a large amount of mist is generated due to the discharged coating liquid and the rinsing liquid being scattered from the substrate. To do. Therefore, the flow rate adjusting means increases the flow rate of the atmospheric gas under the control of the control means, so that a large amount of mist is discharged and the inside of the rotation processing unit is maintained in a clean atmosphere. Accordingly, it is possible to prevent contamination of the substrate due to mist adhesion at the time of discharging the coating liquid and at the time of discharging the rinse liquid.
[0024]
According to a seventh aspect of the present invention, there is provided the substrate processing apparatus according to the sixth aspect , wherein the control means maintains the flow rate of the atmospheric gas from the completion of the discharge of the coating liquid by the coating liquid discharge nozzle until a predetermined time has elapsed. After that, the flow rate of the atmospheric gas is decreased, and the flow rate adjusting means is controlled so that the flow rate of the atmospheric gas decreases after the rinse liquid discharge nozzle completes the discharge of the rinse liquid.
[0025]
In this case, the coating liquid discharged from the coating liquid discharge nozzle is scattered to the outside of the substrate not only at the time of discharge but also for a predetermined time after the completion of discharge, and mist is thereby generated continuously. Therefore, by maintaining the flow rate of the atmospheric gas high until the predetermined time has elapsed after the discharge of the coating liquid is completed by the flow rate adjusting means, it is possible to sufficiently discharge the mist and maintain the rotation processing unit in a clean atmosphere.
[0026]
In addition, after the coating liquid is discharged and the rinse liquid is discharged, the coating liquid and the rinse liquid are less scattered from the substrate, and the mist can be sufficiently discharged even if the flow rate of the atmospheric gas is reduced. In addition, by reducing the flow rate of the atmospheric gas, it is possible to reduce the time that imposes a burden on the exhaust amount of the exhaust system of another substrate processing apparatus connected to the common intake source with the substrate processing apparatus. Thereby, duplication of the increase time of the flow rate of the atmospheric gas with other substrate processing apparatuses can be avoided.
[0027]
Eighth substrate processing apparatus according to the present invention, in the configuration of the substrate processing apparatus according to the seventh invention, the flow rate of the atmospheric gas after ejection completion of the rinsing liquid by Li Nsu liquid discharge nozzle of the rinsing liquid by rinsing liquid discharge nozzle The flow rate adjusting means is controlled so as to be higher than the flow rate of the atmospheric gas before discharge.
[0028]
In this case, the coating film forming process and the rinsing process are performed on the substrate while keeping the atmosphere in the rotation processing part clean by appropriately adjusting the flow rate of the atmospheric gas before, during and after the discharge of the coating liquid and the rinsing liquid. Can be applied.
[0029]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a rotary coating apparatus will be described as an example of one of the substrate processing apparatuses. FIG. 1 is a schematic configuration diagram of a rotary coating apparatus according to an embodiment of the present invention. In FIG. 1, the rotary coating apparatus includes a substrate holding unit 1 composed of a vacuum chuck or a mechanical chuck that holds a substrate W in a horizontal posture, and a rotation motor 2 that rotates the substrate holding unit 1 about a vertical axis.
[0030]
A hollow cup 3 is disposed around the substrate holding unit 1 and the substrate W. The cup 3 is provided to prevent the processing liquid supplied to the surface of the substrate W from splashing outward, and an opening 3a is formed in the upper portion thereof, and the lower portion is surrounded by the substrate W. A liquid discharge port 3b for discharging the processing liquid scattered to the outside and an exhaust port 3c for discharging the atmospheric gas in the cup 3 are formed.
[0031]
An exhaust pipe 4 is connected to the exhaust port 3 c of the cup 3. The downstream end of the exhaust pipe 4 is connected to a utility connection port of a factory exhaust power facility. An auto damper 5 whose opening degree is adjusted by the control unit 7 is arranged in the exhaust pipe 4.
[0032]
The control unit 7 detects the number of rotations of the rotary motor 2 and controls the exhaust pressure in the exhaust pipe 4 by adjusting the opening of the auto damper 5 in accordance with the rotation application processing sequence.
[0033]
Above the substrate W, a resist nozzle 8 for discharging a resist solution onto the substrate W is provided. The resist nozzle 8 is formed to be horizontally movable between the upper position of the substrate W and the standby position outside the cup 3 and to be movable up and down. Further, an edge rinse nozzle 9 that discharges a rinse liquid to the outer periphery of the substrate W is provided above the substrate W. The edge rinse nozzle 9 is provided so as to be horizontally movable and movable up and down between an upper position on the outer periphery of the substrate W and a standby position outside the cup 3. A back surface rinsing nozzle (not shown) for discharging a rinsing liquid to the back surface of the substrate W is provided below the substrate holding unit 1.
[0034]
In the present embodiment, the substrate holding unit 1 corresponds to the rotation holding unit of the present invention, the exhaust pipe 4 corresponds to the exhaust pipe, the auto damper 5 corresponds to the flow rate adjusting unit, and the control unit 7 serves as the control unit. The resist nozzle 8 corresponds to the coating liquid discharge nozzle, and the edge rinse nozzle 9 or the back surface rinse nozzle corresponds to the rinse liquid discharge nozzle. Further, the substrate holding unit 1, the rotation motor 2, the cup 3, the resist nozzle 8 and the edge rinse nozzle 9 correspond to the rotation processing unit of the present invention, and the resist nozzle 8, the edge rinse nozzle 9 or the back rinse nozzle discharges the processing liquid. Corresponds to means.
[0035]
Next, the operation of the rotary coating apparatus having the above configuration will be described. FIG. 2 is a schematic diagram showing the opening state of the auto damper 5, and FIG. 3 is an explanatory diagram showing changes in exhaust pressure (a), damper opening (b), and rotation speed (c) in the rotary coating apparatus. is there. As shown in FIG. 3, the spin coating process in the rotary coater includes a substrate carry-in process T1, a discharge process T2, a film forming process T3, a rinse process T4 and a drying process T5.
[0036]
Based on the control of the control unit 7, the auto damper 5 has a maximum opening V3 shown in FIGS. 2 (a) and 3 (b), an intermediate opening V2 shown in FIGS. 2 (b) and 3 (b), and 2C and FIG. 3B, it is formed so as to be adjustable in three stages of the minimum opening V1. In the following description, the state where the exhaust pressure is large means a state where the degree of negative pressure is large.
[0037]
First, in the substrate loading step T1, the opening degree of the auto damper 5 is adjusted to the intermediate opening degree V2 shown in FIG. 2B, and the exhaust pressure in the exhaust pipe 4 is set to the intermediate pressure P2. As a result, the atmospheric gas in the cup 3 is discharged with an intermediate exhaust amount. The rotary motor 2 is in a stationary state. In this state, the substrate W is placed on the substrate holder 1.
[0038]
Next, in a discharge process T2, a resist solution is discharged from the resist nozzle 8 onto the surface of the substrate W, and the substrate W is rotated at a low rotation speed R1 by driving the rotary motor 2. In the resist solution discharge step T2, the opening degree of the auto damper 5 is adjusted to the maximum opening degree V3 shown in FIG. 2A, and the exhaust pressure in the exhaust pipe 4 is set to the maximum pressure P3. Thereby, the atmospheric gas in the cup 3 is discharged at the maximum flow rate.
[0039]
At the time of discharging the resist solution, the resist solution discharged onto the substrate W is shaken off outward by the rotation of the substrate W, whereby a large amount of resist solution mist is generated. For this reason, the amount of exhaust from the cup 3 is increased, and a large amount of mist generated in the cup 3 is discharged to the outside through the exhaust pipe 4.
[0040]
Further, in the film forming process T3, after the discharge process T2, the opening degree of the auto damper 5 is maintained at the maximum opening degree V3 for a certain time Δt after the resist solution is discharged from the resist nozzle 8, and the exhaust gas is exhausted. The exhaust pressure in the pipeline 4 is maintained at the maximum pressure P3. This predetermined time Δt is, for example, 2 seconds. After the resist solution is discharged, the resist solution is scattered outward from the substrate W for a while, and mist generation is continued. For this reason, even after shifting from the discharge process T2 to the film forming process T3, the atmosphere gas is discharged from the cup 3 with a high exhaust amount for a certain time Δt, and the mist is discharged outward.
[0041]
After the lapse of a certain time Δt, the opening degree of the auto damper 5 is reduced to the minimum opening degree V1 shown in FIG. 2 (c), and the exhaust pressure in the exhaust pipe line 4 is reduced to the minimum pressure P1. On the other hand, the rotational speed of the rotary motor 2 is increased to the maximum rotational speed R3, and the resist solution discharged onto the substrate W is spread over the entire surface of the substrate W. In this film forming process, the substrate W is rotated at a high speed, but the amount of the resist solution scattered from the surface of the substrate W is small, and the mist can be sufficiently discharged even if the exhaust amount is reduced. Further, by reducing the exhaust amount from the cup 3, it is possible to suppress the drying of the outer peripheral portion of the resist film on the substrate W from being promoted as compared with the inner peripheral portion, whereby the film thickness of the resist film is not uniform. Is prevented from occurring. This film formation step T3 with a low displacement is performed for approximately 15 to 25 seconds.
[0042]
Further, in the rinsing step T4, the opening degree of the auto damper 5 is again increased to the maximum opening degree V3 shown in FIG. 2A, and the exhaust pressure in the exhaust pipe line 4 is adjusted to the maximum pressure P3. Thereby, the exhaust amount in the cup 3 is increased. Further, the rotational speed of the rotary motor 2 is reduced to the intermediate rotational speed R2, and in this state, the rinse liquid is discharged from the edge rinse nozzle 9 and the back rinse nozzle to the outer peripheral surface and the back surface of the substrate W.
[0043]
In the rinsing step T4, a large amount of mist is generated by the rinsing liquid discharged onto the substrate W. For this reason, the exhaust amount of the cup 3 is increased, and a large amount of the rinsing liquid mist generated in the cup 3 is discharged to the outside through the exhaust pipe 4.
[0044]
Further, in the drying step T5, the opening degree of the auto damper 5 is adjusted to the intermediate opening degree V2 shown in FIG. 2B, and the exhaust pressure of the exhaust pipe 4 is adjusted to the intermediate pressure P2. Further, the rotational speed of the rotary motor 2 is increased to the maximum rotational speed R3. Thereby, the rinse liquid discharged on the substrate W is shaken off, and the surface of the substrate W is dried.
[0045]
In this way, in the resist solution and rinse solution discharge processes T2 and T4, the opening degree of the auto damper 5 is increased, and thereby the exhaust amount from the cup 3 is increased. For this reason, resist solution or rinse solution mist generated in large quantities from the substrate W is discharged to the outside and is prevented from adhering to the substrate W in the cup 3 and contaminating the substrate W. The resist solution discharge step T2 and the rinse solution discharge step T4 take a short time of several seconds. For this reason, there are very few cases where the periods of the discharge process T2 and the rinsing process T4 in the rotary coating apparatus overlap with the periods of high displacement in other substrate processing apparatuses connected to the common exhaust power facility. For this reason, the displacement of the rotary coating apparatus can be adjusted to a desired high displacement in the discharge process T2 and the rinsing process T4.
[0046]
In the above embodiment, the rotary coating apparatus is described as an example of the substrate processing apparatus. However, the present invention can be applied to other substrate processing apparatuses such as a rotary developing apparatus and a rotary cleaning apparatus. .
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of a rotary coating apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic view showing an opening state of an auto damper.
FIG. 3 is a diagram showing changes in exhaust pressure, damper opening, and rotational speed in the rotary coating apparatus of FIG. 1;
FIG. 4 is a schematic configuration diagram of a conventional rotary coating apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Board | substrate holding part 2 Rotating motor 3 Cup 4 Exhaust pipe line 5 Auto damper 6 Manual damper 7 Control part 10 Air flow 10a Exhaust flow

Claims (8)

A substrate processing apparatus that is connected to an intake source for exhaust and performs predetermined processing on a substrate,
A rotation processing unit that includes a rotation holding unit that rotates while holding the substrate, and a processing liquid discharge unit that discharges the processing liquid onto the substrate held by the rotation holding unit;
An exhaust pipe for guiding the atmospheric gas in the rotation processing section to the intake source;
A flow rate adjusting means for adjusting the flow rate of the atmospheric gas in the exhaust pipe;
Control means for controlling the flow rate adjusting means so that the flow rate of the atmospheric gas is higher than that before the discharge when the treatment liquid is discharged by the treatment liquid discharge means,
The processing liquid discharge means includes a coating liquid discharge nozzle that discharges a coating liquid as the processing liquid,
It said control means, so that the flow rate of the atmospheric gas after a predetermined time has elapsed from the discharge completion of the coating liquid by the coating solution discharge nozzle is lower than the flow rate of the atmosphere gas before discharging the coating liquid by the coating solution discharge nozzle A substrate processing apparatus for controlling the flow rate adjusting means.   The control means controls the flow rate adjusting means so that the flow rate of the atmospheric gas decreases after the flow rate of the atmospheric gas is maintained from the completion of the discharge of the coating liquid by the coating liquid discharge nozzle until a predetermined time elapses. The substrate processing apparatus according to claim 1. The treatment liquid discharge means further includes a rinse liquid discharge nozzle that discharges a rinse liquid as the treatment liquid,
The control means controls the flow rate adjusting means so that the flow rate of the atmospheric gas when the rinsing liquid is discharged by the rinsing liquid discharge nozzle is higher than that before the rinsing liquid is discharged. Or the substrate processing apparatus of 2.   The substrate processing apparatus according to claim 3, wherein the control unit controls the flow rate adjusting unit so that the flow rate of the atmospheric gas decreases after the rinse liquid discharge by the rinse liquid discharge nozzle is completed.   The control means adjusts the flow rate adjusting means so that the flow rate of the atmospheric gas after the rinse liquid discharge by the rinse liquid discharge nozzle is completed is higher than the flow rate of the atmospheric gas before the rinse liquid discharge by the rinse liquid discharge nozzle. 5. The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus is controlled. The treatment liquid discharge means further includes a rinse liquid discharge nozzle for discharging a rinse liquid as the treatment liquid, and after discharging the coating liquid by the coating liquid discharge nozzle, the rinse liquid is discharged by the rinse liquid discharge nozzle,
The control means has a higher flow rate of the atmospheric gas when discharging the coating liquid by the coating liquid discharge nozzle than before discharging the coating liquid, and the atmosphere gas at the time of discharging the rinsing liquid by the rinsing liquid discharge nozzle. 2. The substrate processing apparatus according to claim 1, wherein the flow rate adjusting means is controlled so that the flow rate becomes higher than before the discharge of the rinse liquid.   The control means maintains the flow rate of the atmospheric gas from the completion of the discharge of the coating liquid by the coating liquid discharge nozzle until the lapse of a predetermined time, and then the flow rate of the atmospheric gas decreases, and the rinsing liquid discharge nozzle discharges the rinse liquid. The substrate processing apparatus according to claim 6, wherein the flow rate adjusting unit is controlled so that the flow rate of the atmospheric gas decreases after completion of the discharge.   The control means adjusts the flow rate adjusting means so that the flow rate of the atmospheric gas after the rinse liquid discharge by the rinse liquid discharge nozzle is completed is higher than the flow rate of the atmospheric gas before the rinse liquid discharge by the rinse liquid discharge nozzle. 8. The substrate processing apparatus according to claim 7, wherein the substrate processing apparatus is controlled.

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