JP3711565B2 - Method for removing chlorine ions in etching solution and method for producing wiring board using this etching solution - Google Patents
Method for removing chlorine ions in etching solution and method for producing wiring board using this etching solution Download PDFInfo
- Publication number
- JP3711565B2 JP3711565B2 JP02661194A JP2661194A JP3711565B2 JP 3711565 B2 JP3711565 B2 JP 3711565B2 JP 02661194 A JP02661194 A JP 02661194A JP 2661194 A JP2661194 A JP 2661194A JP 3711565 B2 JP3711565 B2 JP 3711565B2
- Authority
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- Prior art keywords
- copper
- nickel
- etching
- etching solution
- chlorine ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005530 etching Methods 0.000 title claims description 97
- -1 chlorine ions Chemical class 0.000 title claims description 35
- 239000000460 chlorine Substances 0.000 title claims description 34
- 229910052801 chlorine Inorganic materials 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 120
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 96
- 239000010949 copper Substances 0.000 claims description 93
- 229910052802 copper Inorganic materials 0.000 claims description 89
- 239000000243 solution Substances 0.000 claims description 54
- 229910052759 nickel Inorganic materials 0.000 claims description 47
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 37
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 33
- 239000011889 copper foil Substances 0.000 claims description 30
- 238000007747 plating Methods 0.000 claims description 28
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 22
- 229910017604 nitric acid Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 150000007524 organic acids Chemical class 0.000 claims description 18
- 239000000654 additive Substances 0.000 claims description 16
- 230000000996 additive effect Effects 0.000 claims description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 14
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 14
- 239000003929 acidic solution Substances 0.000 claims description 13
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 13
- 238000007772 electroless plating Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 150000003852 triazoles Chemical class 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000011888 foil Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- 125000001425 triazolyl group Chemical group 0.000 claims 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 17
- 229910001096 P alloy Inorganic materials 0.000 description 14
- 239000002585 base Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000003513 alkali Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 235000011054 acetic acid Nutrition 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- ONMOULMPIIOVTQ-UHFFFAOYSA-N 98-47-5 Chemical compound OS(=O)(=O)C1=CC=CC([N+]([O-])=O)=C1 ONMOULMPIIOVTQ-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 229940045803 cuprous chloride Drugs 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- 229940116298 l- malic acid Drugs 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 229940099690 malic acid Drugs 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- ing And Chemical Polishing (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Description
【0001】
【産業上の利用分野】
本発明は、ニッケル又はニッケル合金をエッチングする液中の塩素イオンの除去方法及びそのエッチング液の使用方法に関する。
【0002】
【従来の技術】
プリント配線板は、電子機器の発達に伴い配線密度の高いものが要求され、配線の微細化が一つの大きな技術的課題となっている。
このようなプリント配線板の製造法としては、銅箔を絶縁基材に貼り合わせた銅張り積層板を出発材料とし、その銅箔の回路導体とならない箇所をエッチング除去して回路を形成するサブトラクティブ法、絶縁基材の表面に、必要な回路形状に無電解めっきを行って回路形成するアディティブ法、スルーホール内壁等の回路導体の一部を無電解めっきによって形成する部分アディティブ法等が一般的に知られている。
【0003】
中でも、サブトラクティブ法は古くから行われており、配線密度の向上には、通常、銅張り積層板の銅箔の厚さを薄くすることが行われている。この理由は、銅箔の表面に必要とする回路形状にエッチングレジストを形成し、エッチング溶液でエッチングレジストから露出した不要な回路部分の側面から銅が腐食されるいわゆるサイドエッチと呼ばれる現象が起こり、銅箔が厚いほど、サイドエッチによって除去される側面の銅が多くなるので、微細な回路を形成することが困難となるからである。
【0004】
このサブトラクト法のエッチングレジストに、はんだを用いるはんだ剥離法がある。はんだは配線形成後除去されるが、その剥離液として特開昭58−58280号公報に、鉄イオンとヒドロキシカルボン酸を主成分とする硝酸と過酸化水素の混合物が開示されている。
また、抵抗体付き回路基板用銅箔として銅箔にニッケル又はニッケル−リン合金が銅箔にめっきされたものが、USP3,808,576号公報に開示されている。
【0005】
さらに、第1の銅層1と、銅を腐食する溶液に対して耐食性の高い金属からなる中間層2と、第2の銅層3からなり、前記中間層2が前記第1の銅層1と前記第2の銅層3に挟まれている3層構造のプリント配線板用銅箔も、特開昭58−108785号公報により知られている。この中間層2には、ニッケルおよびニッケル−鉄、ニッケル−スズ合金が使用され、その剥離法には、硫酸とm−ニトロベンゼンスルホン酸とを含む酸性水溶液に浸漬し電解剥離を行う方法が、同公報により知られている。
3層構造の複合金属箔をプリント配線板に用いる場合、第2の銅層に絶縁基材を接合し、第1の銅層を選択的に除去し、さらに中間層2を除去して銅張り積層板として使用するのであるが、このときの中間層2に使用されるニッケル、ニッケル−鉄、ニッケル−スズを除去するには、公報に開示された硫酸とm−ニトロベンゼンスルホン酸を含む酸性水溶液に浸漬し、電解剥離を行わなければならず面倒である。
【0006】
さらに、市販のニッケル又はニッケル合金のエッチング液としては、アルカリ性のエンストリップNP(メルテックス社製、商品名)やメテックSCB(マクダーミッド社製、商品名)、トップリップAZ(奥野製薬社製、商品名)等の溶液に浸漬し剥離する方法や、酸性のメルストリップN−950(メルテックス社製、商品名)、メルストリップHN−841(メルテックス社製、商品名)等の溶液に浸漬し剥離する方法が知られている。
【0007】
しかし、化学的に除去する液エンストリップNP(メルテックス社製、商品名)を使用した場合には、中間層の未溶解残査であるスマットと呼ばれる変質層が生成し、このスマットを除去するのが困難である。メテックSCB(マクダーミッド社製、商品名)を使用すると、基質の銅層まで溶解してしまう場合があり、銅層を完全に残そうとするとニッケル合金の一部が残る。前者の場合には銅層が不連続になり、後者の場合には接着性が低下する。さらに、トップリップAZ(奥野製薬社製、商品名)を使用した場合には、溶解速度が非常に遅く実用的ではなかった。メルストリップN−950(メルテックス社製、商品名)やメルストリップHN−841(メルテックス社製、商品名)を使用した場合には、ニッケル−リン合金を剥離する時に黒色の皮膜が生じ銅が過剰にエッチングされるという欠点があった。
【0008】
このような課題を解決するものとして、本発明者らは、硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含むエッチング液を開発した。
【0009】
【発明が解決しようとする課題】
ところで、このエッチング液は、ニッケル又はニッケル合金のエッチング性が低下し、ニッケル又はニッケル合金残りが発生するという新たな課題を発生した。
本発明者らが鋭意検討した結果、このエッチング性の低下は、塩素イオンが30ppm以上混入することにより発生することを発見した。
【0010】
本発明は、簡便な方法でニッケル又はニッケル合金のエッチング液から塩素イオンを除去する方法とこの方法を用いて塩素イオンを除去したエッチング液を用いた配線板の製造方法を提供することを目的とするものである。
【0011】
【課題を解決するための手段】
本発明のエッチング液中の塩素イオンを除去する方法は、硝酸と過酸化水素を主成分とする酸性溶液に、添加剤として、カルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含む、ニッケル及び/又はニッケル合金のエッチング液に、銅を接触させることを特徴とする。
【0012】
ここで、硝酸はニッケルの剥離に必要な酸度を保持させるために使用され、その使用量は100〜300g/lである。硝酸の濃度を100〜300g/lとしたのは、100g/lより少ないと剥離作用が弱く、300g/lより多いと酸度が強すぎて基質として銅層を用いたときに、過度にエッチングする場合があるからである。
【0013】
また、過酸化水素は酸化剤として作用し、ニッケルを酸化してニッケルの剥離を促進するものであり、その使用量は5〜20ml/lが好ましい。その理由は、5ml/l未満では、酸化剤としての効果が充分でなく、20ml/lを越える場合には酸化作用が強すぎるため基質の銅層を過度にエッチングする場合があるからである。
【0014】
本発明における第1の添加剤成分のカルボキシル基を有する有機酸としては、酸の強さKaが10-3〜10-5のものが好ましく、例えば、蟻酸、酢酸、プロピオン酸、酪酸、コハク酸、グルタル酸、乳酸、リンゴ酸、クエン酸、酒石酸及びこれらの誘導体が挙げられる。このような有機酸は、ニッケル合金層を剥離した時に銅基質の溶解を充分抑制するのに効果的な量で使用するのが好ましい。この有機酸は、剥離液中で好ましくは、10〜200g/lである。
有機酸の濃度を10〜200g/lとした理由は、10g/l未満では基質の銅層の腐食抑制効果が小さく、200g/lを越える場合には、それ以上の効果が期待できず実用上不経済であるからである。したがって有機酸の濃度は、10〜200g/lが好ましい。
【0015】
本発明の第2の添加剤成分としては、環構成員として−NH−又は、=N−の形で窒素原子を含有している複素環式化合物で、酸性溶液に溶解可能なものであり、トリアゾール及びこれらの誘導体が挙げられる。トリアゾール又はその誘導体の添加量は1〜10g/lが好ましい。トリアゾール又はその誘導体の添加量を1〜10g/lとしたのは、1g/l未満では、基質の銅層の腐食抑制効果が小さく、10g/lを越える場合には、それ以上の効果が期待できず実用上不経済であるからである。したがってトリアゾール又はその誘導体の添加量は1〜10g/lが好ましい。
【0016】
本発明に使用する銅は、金属銅であれば良く、銅板、銅粒子、銅粉、銅フィルタ、MCL等があり、これらをエッチング液に接触させることにより塩素イオンを除去する。接触させる方法は、塩素イオンを除去できるならば何れの方法でも良く、浸漬、スプレーによる吹き付け等がある。
【0017】
このような、エッチング液から塩素イオンを除去する方法を用いて、以下の工程をにより、配線板を製造することができる。
A.絶縁基材表面に銅箔を張り合わせた銅張り積層板の銅表面に、めっきレジストを形成する工程
B.露出した箇所にニッケル又はニッケル合金のめっきを行い、めっきレジストを除去した後、露出した銅箔のみをエッチング除去する工程
C.硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含むエッチング液に銅を接触させ塩素イオンを除去する工程
D.上記塩素イオンを除去したエッチング液に基板を接触させることにより、ニッケル又はニッケル合金をエッチング除去する工程
【0018】
また、以下の工程とすることもできる。
A.絶縁基材表面に銅箔を張り合わせた銅張り積層板に穴をあけ穴内壁及び銅箔表面に無電解銅めっきを行い、その銅表面にめっきレジストを形成する工程
B.露出した箇所にニッケル又はニッケル合金のめっきを行い、めっきレジストを除去した後、露出した銅箔のみをエッチング除去する工程
C.硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含むエッチング液に銅を接触させ塩素イオンを除去する工程
D.上記塩素イオンを除去したエッチング液に基板を接触させることにより、ニッケル又はニッケル合金のみをエッチング除去する工程
【0019】
さらに、以下の工程とすることもできる。
A.絶縁基材表面に、第1の銅層と0.04〜1.5μmのニッケル又はニッケル合金の層と、第2の銅層を有する金属箔を第1の銅層が絶縁基材に接するように重ね加熱加圧して積層一体化する工程
B.前記積層板の第2の銅層のみをエッチング除去する工程
C.硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含むエッチング液に銅を接触させ塩素イオンを除去する工程
D.上記塩素イオンを除去したエッチング液に前記積層板を接触させることにより、ニッケル又はニッケル合金のみをエッチング除去する工程
E.その積層板に穴をあけ、穴内壁と露出した銅表面全面に無電解めっきを行い、必要な場合にはさらに電解めっきを行って、回路導体として必要な厚さを確保する工程
F.エッチングレジストを必要な回路の形状に形成し、露出した銅をエッチング除去する工程
【0020】
さらにまた、以下の工程とすることもできる。
A.絶縁基材表面に、第1の銅層と0.04〜1.5μmのニッケル又はニッケル合金の層と、第2の銅層を有する金属箔を第1の銅層が絶縁基材に接するように重ね加熱加圧して積層一体化する工程
B.前記積層板の第2の銅層のみをエッチング除去し穴をあける工程
C.硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含むエッチング液に銅を接触させ塩素イオンを除去する工程
D.上記塩素イオンを除去したエッチング液に前記基板を接触させることにより、ニッケル又はニッケル合金のみをエッチング除去する工程
E.穴内壁と露出した銅表面全面に無電解めっきを行い、必要な場合にはさらに電解めっきを行って、回路導体として必要な厚さを確保する工程
F.エッチングレジストを必要な回路の形状に形成し、露出した銅をエッチング除去する工程
【0021】
【作用】
本発明に用いるエッチング液の主成分は、硝酸と過酸化水素でありニッケルの溶解は下記の反応により進むと考えられている。
Ni+H2O2→NiO+H2O (1)
NiO+2HNO3→Ni(NO3)2+H2O (2)
また、銅も同じ様に反応して溶解すると考えられている。
Cu+H2O2→CuO+H2O (3)
CuO+2HNO3→Cu(NO3)2+H2O (4)
ここで、エッチング液中に塩素イオンが存在する場合、以下の(5)式の反応が起こると考えられ、塩化第1銅は、溶解度が低いため、ニッケル表面に付着することによりニッケルの溶解が阻害されていると考えられる。
Cu+Cu(NO3)2+2Cl-→2CuCl+2NO3 - (5)
本発明で用いられる塩素イオンの除去方法は、硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含む、ニッケル及び/又はニッケル合金のエッチング液に、銅を接触させることにより、銅表面に溶解度の低い塩化第1銅を生成させ塩素イオンを除去することができると考えられる。
【0022】
【実施例】
実施例1
ニッケル及び/又はニッケル合金のエッチング液として、下記の組成の液を用いて塩素イオンの除去処理を行った後、塩素イオン濃度の測定及び選択エッチング性を調べた結果を表1に示す。
(組成及び条件)
硝酸 200g/l
過酸化水素水 10ml/l
酢酸 100g/l
ベンゾトリアゾール 5g/l
塩素イオン濃度 50ppm
処理温度 50℃
銅板処理量 100dm2/l
処理時間 10分間
【0023】
実施例2
ニッケル及び/又はニッケル合金のエッチング液として、下記の組成の液を用いて塩素イオンの除去処理を行った後、塩素イオン濃度の測定及び選択エッチング性を調べた結果を表1に示す。
(組成)
硝酸 200g/l
過酸化水素水 10ml/l
りんご酸 100g/l
ベンドトリアゾール 5g/l
塩素イオン濃度 100ppm
処理温度 50℃
銅粒子処理量 100dm2/l
処理時間 10分間
【0024】
実施例3
ニッケル及び/又はニッケル合金のエッチング液として、下記の組成の液を用いて塩素イオンの除去処理を行った後、塩素イオン濃度の測定及び選択エッチング性を調べた結果を表1に示す。
(組成)
硝酸 200g/l
過酸化水素水 10ml/l
くえん酸 100g/l
ベンドトリアゾール 5g/l
塩素イオン濃度 50ppm
処理温度 50℃
銅フィルタ処理量 100dm2/l
処理時間 10分間
【0025】
比較例1
ニッケル及び/又はニッケル合金のエッチング液として、下記の組成の液を用いて塩素イオンの除去処理を行った後、塩素イオン濃度の測定及び選択エッチング性を調べた結果を表1に示す。
(組成)
硝酸 200g/l
過酸化水素水 10ml/l
酢酸 100g/l
ベンドトリアゾール 5g/l
塩素イオン濃度 50ppm
処理温度 50℃
【0026】
比較例2
ニッケル及び/又はニッケル合金のエッチング液として、下記の組成の液を用いて塩素イオンの除去処理を行った後、塩素イオン濃度の測定及び選択エッチング性を調べた結果を表1に示す。
(組成)
硝酸 200g/l
過酸化水素水 10ml/l
りんご酸 100g/l
ベンドトリアゾール 5g/l
塩素イオン濃度 100ppm
処理温度 50℃
【0027】
(試験)
(1)材料の調整
ニッケル及びニッケル−リン合金層を有する試料として、20×50mmのエポキシ銅張り積層板の銅上に以下のニッケル−リン合金めっき液及び条件で約0.2μmのニッケル−リン合金をめっきしたMCLを作製した。ニッケル及びニッケル−リン合金の膜厚は、蛍光X線膜厚計SFT−8000(セイコー電子株式会社製、商品名)を使用して測定した。
(ニッケルめっき液の組成)
硫酸ニッケル 240g/l
塩化ニッケル 45g/l
ほう酸 30g/l
(めっき条件)
温度 35℃
電流密度 1.5A/dm2
時間 4分間
(ニッケル−リンめっき液の組成)
硫酸ニッケル 240g/l
塩化ニッケル 45g/l
ほう酸 30g/l
亜りん酸 5g/l
(めっき条件)
温度 35℃
電流密度 1.5A/dm2
時間 4分間
【0028】
(2)選択エッチング性試験
塩素イオン除去処理を行ったものと行わないエッチング液に、上記MCLを浸漬し各試料のニッケル−リン合金のエッチング性及び素地銅箔の厚さの減少量を調べた。膜厚の測定には前記蛍光X線膜厚計を使用して測定した。ニッケル−リン合金が選択的にエッチングできているものを○、エッチング残りが発生するものを×とした。
【0029】
【表1】
【0030】
実施例4
エポキシ樹脂絶縁基材表面に銅箔を張り合わせた銅張り積層板であるMCL−E−67(日立化成工業株式会社、商品名)の銅箔表面に、めっきレジストを形成し、露出した箇所に、前記ニッケルめっきを行い、めっきレジストを除去した後、露出した銅箔のみをアルカリエッチャントでエッチング除去し、実施例1に用いたエッチング液に接触させることにより、ニッケルのみをエッチング除去し、片面の回路板とした。
【0031】
実施例5
エポキシ樹脂絶縁基材表面に銅箔を張り合わせた銅張り積層板であるMCL−E−67(日立化成工業株式会社、商品名)にドリルで穴をあけ、穴内壁及び銅箔表面に無電解めっきを行い、その銅表面にめっきレジストを形成し、前記ニッケル−リン合金めっきを行い、めっきレジストを除去した後、露出した銅箔のみをアルカリエッチャントでエッチング除去し、実施例2のエッチング液に接触させることにより、ニッケル−リンのみをエッチング除去し、両面回路板とした。
【0032】
実施例6
エポキシ樹脂絶縁基材表面に銅箔を張り合わせた銅張り積層板であるMCL−E−67(日立化成工業株式会社、商品名)を内層回路加工したものに、プリプレグE−67(日立化成工業株式会社、商品名)と、35μm厚さの銅箔を張り合わせた積層板に穴をあけ、穴内壁及び銅箔表面に無電解めっきを行い、その銅表面にめっきレジストを形成し、前記ニッケルめっきを行い、めっきレジストを除去した後、露出した銅箔のみをアルカリエッチャントでエッチング除去し、実施例3のエッチング液に接触させることにより、ニッケルのみをエッチング除去し、多層回路板とした。
【0033】
実施例7
絶縁基材プリプレグE−67(日立化成工業株式会社、商品名)の表面に、0.04〜1.5μmのニッケル−リン合金層と5μmの銅層を有する金属箔を、銅層が絶縁基材に接するように重ね、加熱加圧して積層一体化し、その積層板に穴をあけ実施例1のエッチング液に接触させることにより、ニッケル−リン合金層のみをエッチング除去し、その積層板の穴内壁と露出した銅表面全面に無電解めっきを20μm行いエッチングレジストを必要な回路の形状に形成し、露出した銅をエッチング除去して、両面回路板とした。
【0034】
実施例8
絶縁基材プリプレグE−67(日立化成工業株式会社、商品名)の表面に、1〜15μmの第1の銅層と0.04〜1.5μmのニッケル−リン合金層と第2銅層とを有する金属箔を、第1の銅層が絶縁基材に接するように重ね、加熱加圧して積層一体化し、第2の銅層のみをアルカリエッチャントでエッチング除去し、実施例2のエッチング液に接触させることにより、ニッケル−リン合金層のみをエッチング除去し、その積層板に穴をあけその積層板の穴内壁と露出した銅表面全面に無電解めっきを行い、さらに電解めっきを行って、回路導体として必要な35μmを確保し、エッチングレジストを必要な回路の形状に形成し、露出した銅をエッチング除去して、配線板とした。
【0035】
実施例9
エポキシ樹脂絶縁基材表面に銅箔を張り合わせた銅張り積層板であるMCL−E−67(日立化成工業株式会社、商品名)を内層回路加工したものに、プリプレグE−67(日立化成工業株式会社、商品名)と、1〜15μmの第1の銅層と0.04〜1.5μmのニッケル−リン合金層と第2銅層とを有する金属箔を、第1の銅層が絶縁基材に接するように重ね、加熱加圧して積層一体化し、第2の銅層のみをアルカリエッチャントでエッチング除去し、実施例3のエッチング液に接触させることにより、ニッケル−リン合金層のみをエッチング除去し、その積層板に穴をあけその積層板の穴内壁と露出した銅表面全面に無電解めっきを行い、さらに電解めっきを行って、回路導体として必要な35μmを確保し、エッチングレジストを必要な回路の形状に形成し、露出した銅をエッチング除去して、多層配線板とした。
【0036】
【発明の効果】
本発明によれば、銅をエッチング液に接触させることでエッチング液中に含まれる塩素イオンを除去し、ニッケル又はニッケル合金のエッチング性を改善することができる。[0001]
[Industrial application fields]
The present invention relates to a method for removing chlorine ions in a liquid for etching nickel or a nickel alloy and a method for using the etching liquid.
[0002]
[Prior art]
With the development of electronic devices, printed wiring boards are required to have high wiring density, and miniaturization of wiring has become one major technical issue.
As a method for manufacturing such a printed wiring board, a copper clad laminate in which a copper foil is bonded to an insulating substrate is used as a starting material, and a portion of the copper foil that does not become a circuit conductor is removed by etching to form a circuit. The active method, the additive method that forms the circuit by performing electroless plating on the surface of the insulating substrate, and the partial additive method that forms part of the circuit conductor such as the inner wall of the through hole by electroless plating Known.
[0003]
Among them, the subtractive method has been performed for a long time, and in order to improve the wiring density, the thickness of the copper foil of the copper-clad laminate is usually reduced. The reason for this is that an etching resist is formed in the required circuit shape on the surface of the copper foil, and a phenomenon called so-called side etching occurs in which copper is corroded from the side surface of the unnecessary circuit portion exposed from the etching resist with the etching solution, This is because the thicker the copper foil, the more copper on the side surface that is removed by side etching, and it becomes difficult to form a fine circuit.
[0004]
There exists the solder peeling method which uses a solder for the etching resist of this subtract method. The solder is removed after the wiring is formed. As a stripping solution, Japanese Unexamined Patent Publication (Kokai) No. 58-58280 discloses a mixture of nitric acid and hydrogen peroxide mainly composed of iron ions and hydroxycarboxylic acid.
US Pat. No. 3,808,576 discloses a copper foil for a circuit board with a resistor in which a copper foil is plated with nickel or a nickel-phosphorus alloy.
[0005]
Further, the first copper layer 1, an intermediate layer 2 made of a metal having high corrosion resistance against a solution that corrodes copper, and a second copper layer 3, the intermediate layer 2 being the first copper layer 1 A copper foil for a printed wiring board having a three-layer structure sandwiched between the second copper layer 3 and the second copper layer 3 is also known from JP-A-58-108785. The intermediate layer 2 is made of nickel, nickel-iron, or nickel-tin alloy, and the stripping method includes immersion in an acidic aqueous solution containing sulfuric acid and m-nitrobenzenesulfonic acid to perform electrolytic stripping. Known from the publication.
When using a composite metal foil with a three-layer structure for a printed wiring board, an insulating base material is bonded to the second copper layer, the first copper layer is selectively removed, and the intermediate layer 2 is further removed to be copper-clad. An acidic aqueous solution containing sulfuric acid and m-nitrobenzenesulfonic acid disclosed in the gazette is used to remove nickel, nickel-iron, and nickel-tin used in the intermediate layer 2 at this time. It is troublesome to immerse the film in the substrate and perform electrolytic peeling.
[0006]
Furthermore, commercially available nickel or nickel alloy etchants include alkaline Enstrip NP (Meltex, trade name), Metec SCB (McDermid, trade name), Top Lip AZ (Okuno Pharmaceutical, trade name). Soaked in a solution such as acid Melstrip N-950 (Meltex, trade name), Melstrip HN-841 (Meltex, trade name), etc. A method of peeling is known.
[0007]
However, when liquid enstrip NP (trade name, manufactured by Meltex Co.) that is chemically removed is used, an altered layer called smut, which is an undissolved residue of the intermediate layer, is generated, and this smut is removed. Is difficult. If Metec SCB (manufactured by McDermid, trade name) is used, even the copper layer of the substrate may be dissolved, and if the copper layer is completely left, a part of the nickel alloy remains. In the former case, the copper layer becomes discontinuous, and in the latter case, the adhesiveness decreases. Furthermore, when Top Lip AZ (trade name, manufactured by Okuno Pharmaceutical Co., Ltd.) was used, the dissolution rate was very slow and not practical. When Melstrip N-950 (Meltex, trade name) or Melstrip HN-841 (Meltex, trade name) is used, a black film is formed when the nickel-phosphorus alloy is peeled off. However, there is a disadvantage that the metal is excessively etched.
[0008]
In order to solve such a problem, the present inventors have added an acidic solution mainly composed of nitric acid and hydrogen peroxide, an organic acid containing a carboxyl group as an additive, and -NH- or = as a ring member. An etchant has been developed comprising a heterocyclic compound containing a nitrogen atom in the form of N-.
[0009]
[Problems to be solved by the invention]
By the way, this etching solution has a new problem that the etching property of nickel or nickel alloy is lowered and the remaining nickel or nickel alloy is generated.
As a result of intensive studies by the present inventors, it has been discovered that this decrease in etching property occurs when chlorine ions are mixed in at 30 ppm or more.
[0010]
An object of the present invention is to provide a method for removing chlorine ions from a nickel or nickel alloy etchant by a simple method and a method for producing a wiring board using an etchant from which chlorine ions have been removed using this method. To do.
[0011]
[Means for Solving the Problems]
The method for removing chlorine ions in the etching solution of the present invention includes an acidic solution mainly composed of nitric acid and hydrogen peroxide, an organic acid containing a carboxyl group as an additive, and —NH— or = as a ring member. Copper is brought into contact with an etching solution of nickel and / or a nickel alloy containing a heterocyclic compound containing a nitrogen atom in the form of N-.
[0012]
Here, nitric acid is used in order to maintain the acidity necessary for peeling of nickel, and the amount used is 100 to 300 g / l. The concentration of nitric acid is set to 100 to 300 g / l. When the concentration is less than 100 g / l, the peeling action is weak. When the concentration is more than 300 g / l, the acidity is too strong and the etching is excessive when a copper layer is used as a substrate. Because there are cases.
[0013]
Hydrogen peroxide acts as an oxidant and oxidizes nickel to promote nickel peeling. The amount used is preferably 5 to 20 ml / l. The reason is that if it is less than 5 ml / l, the effect as an oxidizing agent is not sufficient, and if it exceeds 20 ml / l, the oxidizing action is too strong and the copper layer of the substrate may be excessively etched.
[0014]
The organic acid having a carboxyl group as the first additive component in the present invention preferably has an acid strength Ka of 10 −3 to 10 −5 , for example, formic acid, acetic acid, propionic acid, butyric acid, succinic acid. , Glutaric acid, lactic acid, malic acid, citric acid, tartaric acid and derivatives thereof. Such an organic acid is preferably used in an amount effective to sufficiently suppress dissolution of the copper substrate when the nickel alloy layer is peeled off. This organic acid is preferably 10 to 200 g / l in the stripping solution.
The reason why the concentration of the organic acid is 10 to 200 g / l is that if the amount is less than 10 g / l, the effect of inhibiting the corrosion of the copper layer of the substrate is small, and if it exceeds 200 g / l, no further effect can be expected. Because it is uneconomical. Therefore, the concentration of the organic acid is preferably 10 to 200 g / l.
[0015]
The second additive component of the present invention is a heterocyclic compound containing a nitrogen atom in the form of -NH- or = N- as a ring member, and is soluble in an acidic solution. Triazoles and their derivatives are mentioned. The addition amount of triazole or a derivative thereof is preferably 1 to 10 g / l. The addition amount of triazole or a derivative thereof is set to 1 to 10 g / l. When the amount is less than 1 g / l, the corrosion inhibition effect of the copper layer of the substrate is small, and when the amount exceeds 10 g / l, a further effect is expected. This is because it is impossible and practically uneconomical. Therefore, the addition amount of triazole or a derivative thereof is preferably 1 to 10 g / l.
[0016]
The copper used for this invention should just be metallic copper, and there exist a copper plate, a copper particle, a copper powder, a copper filter, MCL, etc., A chlorine ion is removed by making these contact an etching liquid. The contact method may be any method as long as chlorine ions can be removed, such as immersion and spraying.
[0017]
Using such a method of removing chlorine ions from the etching solution, a wiring board can be manufactured by the following steps.
A. A step of forming a plating resist on the copper surface of a copper-clad laminate in which a copper foil is bonded to the surface of an insulating substrate. Step of performing nickel or nickel alloy plating on the exposed portion, removing the plating resist, and then etching away only the exposed copper foil. Heterocyclic compounds containing an organic acid containing a carboxyl group as an additive in an acidic solution mainly composed of nitric acid and hydrogen peroxide, and a nitrogen atom as a ring member in the form of -NH- or = N- D. removing chlorine ions by bringing copper into contact with an etching solution containing A step of etching and removing nickel or a nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed.
Moreover, it can also be set as the following processes.
A. A step of forming a plating resist on the copper surface by forming a hole in a copper-clad laminate in which a copper foil is bonded to the surface of the insulating base material, and performing electroless copper plating on the inner wall and the surface of the copper foil. Step of performing nickel or nickel alloy plating on the exposed portion, removing the plating resist, and then etching away only the exposed copper foil. Heterocyclic compounds containing an organic acid containing a carboxyl group as an additive in an acidic solution mainly composed of nitric acid and hydrogen peroxide, and a nitrogen atom as a ring member in the form of -NH- or = N- D. removing chlorine ions by bringing copper into contact with an etching solution containing A step of etching and removing only nickel or a nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed.
Furthermore, it can also be set as the following processes.
A. A metal foil having a first copper layer, a 0.04-1.5 μm nickel or nickel alloy layer, and a second copper layer on the surface of the insulating base so that the first copper layer contacts the insulating base Step of stacking and pressurizing and laminating and integrating. C. removing only the second copper layer of the laminate by etching; Heterocyclic compounds containing an organic acid containing a carboxyl group as an additive in an acidic solution mainly composed of nitric acid and hydrogen peroxide, and a nitrogen atom as a ring member in the form of -NH- or = N- D. removing chlorine ions by bringing copper into contact with an etching solution containing E. removing only nickel or nickel alloy by bringing the laminate into contact with the etching solution from which the chlorine ions have been removed; Steps for forming a hole in the laminated plate, performing electroless plating on the entire inner wall of the hole and the exposed copper surface, and further performing electrolytic plating when necessary to ensure a necessary thickness as a circuit conductor. A process of forming an etching resist in a necessary circuit shape and etching away the exposed copper.
Furthermore, the following steps can be performed.
A. A metal foil having a first copper layer, a 0.04-1.5 μm nickel or nickel alloy layer, and a second copper layer on the surface of the insulating base so that the first copper layer contacts the insulating base Step of stacking and pressurizing and laminating and integrating. B. etching and removing only the second copper layer of the laminate. Heterocyclic compounds containing an organic acid containing a carboxyl group as an additive in an acidic solution mainly composed of nitric acid and hydrogen peroxide, and a nitrogen atom as a ring member in the form of -NH- or = N- D. removing chlorine ions by bringing copper into contact with an etching solution containing E. removing only nickel or nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed; Step of performing electroless plating on the inner wall of the hole and the entire exposed copper surface, and further performing electrolytic plating if necessary to ensure a necessary thickness as a circuit conductor. Forming an etching resist into a necessary circuit shape and etching away the exposed copper;
[Action]
The main components of the etching solution used in the present invention are nitric acid and hydrogen peroxide, and the dissolution of nickel is considered to proceed by the following reaction.
Ni + H 2 O 2 → NiO + H 2 O (1)
NiO + 2HNO 3 → Ni (NO 3 ) 2 + H 2 O (2)
Copper is also considered to react and dissolve in the same way.
Cu + H 2 O 2 → CuO + H 2 O (3)
CuO + 2HNO 3 → Cu (NO 3 ) 2 + H 2 O (4)
Here, when chlorine ions are present in the etching solution, it is considered that the reaction of the following formula (5) occurs. Since cuprous chloride has low solubility, nickel is dissolved by adhering to the nickel surface. It is thought that it is inhibited.
Cu + Cu (NO 3 ) 2 + 2Cl − → 2CuCl + 2NO 3 − (5)
The method for removing chloride ions used in the present invention comprises an acidic solution mainly composed of nitric acid and hydrogen peroxide, an organic acid containing a carboxyl group as an additive, and a form of —NH— or ═N— as a ring member. In addition, copper is brought into contact with an etching solution of nickel and / or a nickel alloy containing a heterocyclic compound containing a nitrogen atom in order to produce cuprous chloride having low solubility on the copper surface, thereby generating chlorine ions. It can be removed.
[0022]
【Example】
Example 1
Table 1 shows the results of measurement of chlorine ion concentration and selective etching property after removing chlorine ions using a solution having the following composition as an etching solution for nickel and / or nickel alloy.
(Composition and conditions)
Nitric acid 200g / l
Hydrogen peroxide solution 10ml / l
Acetic acid 100g / l
Benzotriazole 5g / l
Chlorine ion concentration 50ppm
Processing temperature 50 ℃
Copper plate throughput 100 dm 2 / l
Processing time 10 minutes 【0023】
Example 2
Table 1 shows the results of measurement of chlorine ion concentration and selective etching property after removing chlorine ions using a solution having the following composition as an etching solution for nickel and / or nickel alloy.
(composition)
Nitric acid 200g / l
Hydrogen peroxide solution 10ml / l
Malic acid 100g / l
Bend triazole 5g / l
Chloride ion concentration 100ppm
Processing temperature 50 ℃
Copper particle throughput 100 dm 2 / l
Processing time 10 minutes [0024]
Example 3
Table 1 shows the results of measurement of chlorine ion concentration and selective etching property after removing chlorine ions using a solution having the following composition as an etching solution for nickel and / or nickel alloy.
(composition)
Nitric acid 200g / l
Hydrogen peroxide solution 10ml / l
Citric acid 100g / l
Bend triazole 5g / l
Chlorine ion concentration 50ppm
Processing temperature 50 ℃
Copper filter throughput 100 dm 2 / l
Processing time 10 minutes 【0025】
Comparative Example 1
Table 1 shows the results of measurement of chlorine ion concentration and selective etching property after removing chlorine ions using a solution having the following composition as an etching solution for nickel and / or nickel alloy.
(composition)
Nitric acid 200g / l
Hydrogen peroxide solution 10ml / l
Acetic acid 100g / l
Bend triazole 5g / l
Chlorine ion concentration 50ppm
Processing temperature 50 ℃
[0026]
Comparative Example 2
Table 1 shows the results of measurement of chlorine ion concentration and selective etching property after removing chlorine ions using a solution having the following composition as an etching solution for nickel and / or nickel alloy.
(composition)
Nitric acid 200g / l
Hydrogen peroxide solution 10ml / l
Malic acid 100g / l
Bend triazole 5g / l
Chloride ion concentration 100ppm
Processing temperature 50 ℃
[0027]
(test)
(1) Preparation of material As a sample having a nickel and nickel-phosphorus alloy layer, a nickel-phosphorus alloy plating solution and a condition of about 0.2 μm nickel-phosphorus on the copper of a 20 × 50 mm epoxy copper-clad laminate are as follows: An MCL plated with an alloy was prepared. The film thicknesses of nickel and nickel-phosphorus alloy were measured using a fluorescent X-ray film thickness meter SFT-8000 (trade name, manufactured by Seiko Electronics Co., Ltd.).
(Composition of nickel plating solution)
Nickel sulfate 240g / l
Nickel chloride 45g / l
Boric acid 30g / l
(Plating conditions)
Temperature 35 ° C
Current density 1.5A / dm 2
Time 4 minutes (composition of nickel-phosphorus plating solution)
Nickel sulfate 240g / l
Nickel chloride 45g / l
Boric acid 30g / l
Phosphorous acid 5g / l
(Plating conditions)
Temperature 35 ° C
Current density 1.5A / dm 2
Time 4 minutes 【0028】
(2) Selective etching property test The MCL was immersed in an etching solution with and without chlorine ion removal treatment, and the etching amount of the nickel-phosphorus alloy of each sample and the thickness reduction of the base copper foil were examined. . The film thickness was measured using the fluorescent X-ray film thickness meter. The case where the nickel-phosphorus alloy was selectively etched was indicated by ◯, and the case where etching residue occurred was indicated by ×.
[0029]
[Table 1]
[0030]
Example 4
A plating resist is formed on the copper foil surface of MCL-E-67 (Hitachi Kasei Kogyo Co., Ltd., trade name), which is a copper-clad laminate in which a copper foil is laminated on the surface of the epoxy resin insulating base material. After the nickel plating is performed and the plating resist is removed, only the exposed copper foil is removed by etching with an alkali etchant, and only the nickel is removed by contact with the etching solution used in Example 1, thereby providing a circuit on one side. A board was used.
[0031]
Example 5
Drill holes in MCL-E-67 (Hitachi Kasei Kogyo Co., Ltd., trade name), a copper-clad laminate with copper foil bonded to the surface of an epoxy resin insulating substrate, and electroless plating on the inner wall of the hole and the copper foil surface After forming a plating resist on the copper surface, performing the nickel-phosphorus alloy plating and removing the plating resist, only the exposed copper foil is removed by etching with an alkali etchant and contacted with the etching solution of Example 2 As a result, only nickel-phosphorus was removed by etching to obtain a double-sided circuit board.
[0032]
Example 6
Pre-preg E-67 (Hitachi Kasei Kogyo Co., Ltd.) is obtained by processing MCL-E-67 (Hitachi Kasei Kogyo Co., Ltd., trade name), a copper-clad laminate with copper foil laminated on the surface of an epoxy resin insulating substrate. Company, product name) and a laminated plate with 35μm thick copper foil, holes are made, electroless plating is performed on the inner wall of the hole and the copper foil surface, a plating resist is formed on the copper surface, and the nickel plating is performed. After removing the plating resist, only the exposed copper foil was removed by etching with an alkali etchant, and contacted with the etching solution of Example 3 to remove only nickel and obtain a multilayer circuit board.
[0033]
Example 7
A metal foil having a nickel-phosphorus alloy layer of 0.04 to 1.5 μm and a copper layer of 5 μm on the surface of an insulating substrate prepreg E-67 (Hitachi Chemical Industry Co., Ltd., trade name), the copper layer being an insulating group The layers are laminated so as to be in contact with each other, heated and pressurized to be laminated and integrated, and a hole is made in the laminated plate to bring it into contact with the etching solution of Example 1 so that only the nickel-phosphorus alloy layer is removed by etching. Electroless plating was performed on the inner wall and the entire exposed copper surface by 20 μm to form an etching resist in a necessary circuit shape, and the exposed copper was removed by etching to obtain a double-sided circuit board.
[0034]
Example 8
On the surface of the insulating base material prepreg E-67 (Hitachi Chemical Industry Co., Ltd., trade name), a 1 to 15 μm first copper layer, a 0.04 to 1.5 μm nickel-phosphorus alloy layer, and a second copper layer A metal foil having a thickness of 2 is stacked so that the first copper layer is in contact with the insulating base material, and is heated and pressed to be laminated and integrated, and only the second copper layer is removed by etching with an alkali etchant. By contacting, only the nickel-phosphorus alloy layer is removed by etching, a hole is made in the laminated plate, electroless plating is performed on the entire inner surface of the hole and the exposed copper surface of the laminated plate, and further, electrolytic plating is performed, 35 μm necessary as a conductor was secured, an etching resist was formed in a necessary circuit shape, and exposed copper was removed by etching to obtain a wiring board.
[0035]
Example 9
Pre-preg E-67 (Hitachi Kasei Kogyo Co., Ltd.) is obtained by processing MCL-E-67 (Hitachi Kasei Kogyo Co., Ltd., trade name), a copper-clad laminate with copper foil laminated on the surface of an epoxy resin insulating substrate. A metal foil having a first copper layer of 1 to 15 μm, a nickel-phosphorus alloy layer of 0.04 to 1.5 μm, and a second copper layer, the first copper layer being an insulating group The layers are laminated so as to be in contact with the material, and are laminated and integrated by heating, and only the second copper layer is etched away with an alkali etchant, and only the nickel-phosphorus alloy layer is removed by contact with the etching solution of Example 3. Then, a hole is made in the laminated board, electroless plating is performed on the hole inner wall of the laminated board and the entire exposed copper surface, and further electrolytic plating is performed to secure 35 μm necessary as a circuit conductor, and an etching resist is required. Formed in the shape of a circuit, the exposed copper is etched away to obtain a multilayer wiring board.
[0036]
【The invention's effect】
According to the present invention, chlorine ions contained in an etching solution can be removed by bringing copper into contact with the etching solution, and the etching property of nickel or a nickel alloy can be improved.
Claims (7)
A.絶縁基材表面に銅箔を張り合わせた銅張り積層板の銅表面に、めっきレジストを形成する工程
B.露出した箇所にニッケル又はニッケル合金のめっきを行い、めっきレジストを除去した後、露出した銅箔のみをエッチング除去する工程
C.硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含むエッチング液に銅を接触させ塩素イオンを除去する工程
D.上記塩素イオンを除去したエッチング液に基板を接触させることにより、ニッケル又はニッケル合金をエッチング除去する工程The manufacturing method of the wiring board characterized by including the following processes.
A. A step of forming a plating resist on the copper surface of a copper-clad laminate in which a copper foil is bonded to the surface of an insulating substrate. Step of performing nickel or nickel alloy plating on the exposed portion, removing the plating resist, and then etching away only the exposed copper foil. Heterocyclic compounds containing an organic acid containing a carboxyl group as an additive in an acidic solution mainly composed of nitric acid and hydrogen peroxide and a nitrogen atom as a ring member in the form of -NH- or = N- D. removing chlorine ions by bringing copper into contact with an etching solution containing Etching and removing nickel or nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed
A.絶縁基材表面に銅箔を張り合わせた銅張り積層板に穴をあけ穴内壁及び銅箔表面に無電解銅めっきを行い、その銅表面にめっきレジストを形成する工程
B.露出した箇所にニッケル又はニッケル合金のめっきを行い、めっきレジストを除去した後、露出した銅箔のみをエッチング除去する工程
C.硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含むエッチング液に銅を接触させ塩素イオンを除去する工程
D.上記塩素イオンを除去したエッチング液に基板を接触させることにより、ニッケル又はニッケル合金のみをエッチング除去する工程The manufacturing method of the wiring board characterized by including the following processes.
A. A step of forming a plating resist on the copper surface by forming a hole in a copper-clad laminate in which a copper foil is bonded to the surface of the insulating base material, and performing electroless copper plating on the inner wall and the surface of the copper foil. Step of performing nickel or nickel alloy plating on the exposed portion, removing the plating resist, and then etching away only the exposed copper foil. Heterocyclic compounds containing an organic acid containing a carboxyl group as an additive in an acidic solution mainly composed of nitric acid and hydrogen peroxide, and a nitrogen atom as a ring member in the form of -NH- or = N- D. removing chlorine ions by bringing copper into contact with an etching solution containing A step of etching and removing only nickel or a nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed.
A.絶縁基材表面に、第1の銅層と0.04〜1.5μmのニッケル又はニッケル合金の層と、第2の銅層を有する金属箔を第1の銅層が絶縁基材に接するように重ね加熱加圧して積層一体化する工程
B.前記積層板の第2の銅層のみをエッチング除去する工程
C.硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含むエッチング液に銅を接触させ塩素イオンを除去する工程
D.上記塩素イオンを除去したエッチング液に前記積層板を接触させることにより、ニッケル又はニッケル合金のみをエッチング除去する工程
E.その積層板に穴をあけ、穴内壁と露出した銅表面全面に無電解めっきを行い、必要な場合にはさらに電解めっきを行って、回路導体として必要な厚さを確保する工程
F.エッチングレジストを必要な回路の形状に形成し、露出した銅をエッチング除去する工程The manufacturing method of the wiring board characterized by including the following processes.
A. A metal foil having a first copper layer, a nickel or nickel alloy layer of 0.04 to 1.5 μm, and a second copper layer on the surface of the insulating base so that the first copper layer contacts the insulating base Step of stacking and pressurizing and laminating and integrating. C. removing only the second copper layer of the laminate by etching; Heterocyclic compounds containing an organic acid containing a carboxyl group as an additive in an acidic solution mainly composed of nitric acid and hydrogen peroxide, and a nitrogen atom as a ring member in the form of -NH- or = N- D. removing chlorine ions by bringing copper into contact with an etching solution containing E. removing only nickel or nickel alloy by bringing the laminate into contact with the etching solution from which the chlorine ions have been removed; Steps for forming a hole in the laminated plate, performing electroless plating on the entire inner wall of the hole and the exposed copper surface, and further performing electrolytic plating when necessary to ensure a necessary thickness as a circuit conductor. A process of forming an etching resist in the required circuit shape and removing the exposed copper by etching
A.絶縁基材表面に、第1の銅層と0.04〜1.5μmのニッケル又はニッケル合金の層と、第2の銅層を有する金属箔を第1の銅層が絶縁基材に接するように重ね加熱加圧して積層一体化する工程
B.前記積層板の第2の銅層のみをエッチング除去し穴をあける工程
C.硝酸と過酸化水素を主成分とする酸性溶液に、添加剤としてカルボキシル基を含む有機酸と、環構成員として−NH−又は=N−の形で窒素原子を含有している複素環式化合物とを含むエッチング液に銅を接触させ塩素イオンを除去する工程
D.上記塩素イオンを除去したエッチング液に前記基板を接触させることにより、ニッケル又はニッケル合金のみをエッチング除去する工程
E.穴内壁と露出した銅表面全面に無電解めっきを行い、必要な場合にはさらに電解めっきを行って、回路導体として必要な厚さを確保する工程
F.エッチングレジストを必要な回路の形状に形成し、露出した銅をエッチング除去する工程The manufacturing method of the wiring board characterized by including the following processes.
A. A metal foil having a first copper layer, a nickel or nickel alloy layer of 0.04 to 1.5 μm, and a second copper layer on the surface of the insulating base so that the first copper layer contacts the insulating base Step of stacking and pressurizing and laminating and integrating. B. etching and removing only the second copper layer of the laminate. Heterocyclic compounds containing an organic acid containing a carboxyl group as an additive in an acidic solution mainly composed of nitric acid and hydrogen peroxide, and a nitrogen atom as a ring member in the form of -NH- or = N- D. removing chlorine ions by bringing copper into contact with an etching solution containing E. removing only nickel or nickel alloy by bringing the substrate into contact with the etching solution from which the chlorine ions have been removed; Step of performing electroless plating on the inner wall of the hole and the entire exposed copper surface, and further performing electrolytic plating if necessary to ensure a necessary thickness as a circuit conductor. A process of forming an etching resist in the required circuit shape and removing the exposed copper by etching
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02661194A JP3711565B2 (en) | 1994-02-24 | 1994-02-24 | Method for removing chlorine ions in etching solution and method for producing wiring board using this etching solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02661194A JP3711565B2 (en) | 1994-02-24 | 1994-02-24 | Method for removing chlorine ions in etching solution and method for producing wiring board using this etching solution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07235752A JPH07235752A (en) | 1995-09-05 |
| JP3711565B2 true JP3711565B2 (en) | 2005-11-02 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02661194A Expired - Fee Related JP3711565B2 (en) | 1994-02-24 | 1994-02-24 | Method for removing chlorine ions in etching solution and method for producing wiring board using this etching solution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3711565B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8161637B2 (en) | 2009-07-24 | 2012-04-24 | Ibiden Co., Ltd. | Manufacturing method for printed wiring board |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW374802B (en) | 1996-07-29 | 1999-11-21 | Ebara Densan Ltd | Etching composition, method for roughening copper surface and method for producing printed wiring board |
| DE102005038414A1 (en) * | 2005-08-12 | 2007-02-15 | Basf Aktiengesellschaft | Stabilized etching solutions for etching Cu and Cu / Ni layers |
| JP5000446B2 (en) * | 2007-10-01 | 2012-08-15 | 日本メクトロン株式会社 | Method for manufacturing printed wiring board |
| CN113957442A (en) * | 2021-02-01 | 2022-01-21 | 江苏悦锌达新材料有限公司 | Nickel removing liquid medicine for nickel electroplating anti-corrosion layer, preparation method and chemical nickel removing process |
-
1994
- 1994-02-24 JP JP02661194A patent/JP3711565B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8161637B2 (en) | 2009-07-24 | 2012-04-24 | Ibiden Co., Ltd. | Manufacturing method for printed wiring board |
| US9113562B2 (en) | 2009-07-24 | 2015-08-18 | Ibiden Co., Ltd. | Manufacturing method for printed wiring board |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07235752A (en) | 1995-09-05 |
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