JP3733775B2 - Projection electrode forming device - Google Patents

Description

【００８３】
の反応を生じ、フッ素イオン（Ｆ^-）が半田ボールやＩＣの接続用導通部と反応し、表面をフッ化する。ところで半田ボールやＩＣの接続用導通部は金属であるので、表面が自然酸化膜によって覆われており、この酸化膜の酸素とＦ^-との置換反応が生じて表面がフッ化され、またはフッ素と酸素の混合した組成を有する表面が形成される。
【００８４】
本装置１０は、図示しない搬送手段を有しており、フッ化された半田ボールやＩＣを接合処理部１６に搬入できるようにしてある。接合処理部１６は、アルゴンガス供給部３４が接続されたチャンバ３２を備えており、当該チャンバ３２内をアルゴンガス（不活性ガス）で充填可能にしている。
【００８５】
またチャンバ３２内にはテーブル３６と抑え板３８とが上下に重なるように設けられるとともに、当該抑え板３８には加圧用の上下シリンダ４０が接続される。ここでテーブル３６と抑え板３８とには、接合治具４２Ｕ、４２Ｄが設けられ、この両者を密着させることで、ＩＣに対する半田ボールの接合を行えるようにしている。なお密着動作に加え、上下シリンダ４０を稼働させれは界面が加圧されるので両者の接合が促進される。またチャンバ３２の下部には、加熱手段としてのヒータ４４が設けてあって、半田ボールやＩＣを所定の温度に加熱制御し、両者の接合を促進できるようにしている。
【００８６】
また接合処理部１６の後段にはマガジンアンローダ４６が設けられ、半田ボールが接合されたＩＣを再び収納可能にしている。
【００８７】
ここで第１フッ化処理部１２、第２フッ化処理部１４、接合処理部１６における接合治具４２Ｕ、４２Ｄの具体的形態を示す。
【００８８】
図２は第１フッ化処理部１２の具体的形態を示した概略図である。同図（１）に示すように反応室１８を管状に形成するとともに、これを傾かせる。このように第１フッ化処理部１２を形成すると、半田ボール４８は管状端部の投入口から出口の間を転がりながらフッ化処理がなされるので、半田ボール４８の表面を均一にフッ化処理することが可能になるとともに、半田ボール４８の連続投入ができ、さらにＨＦガスの供給量を少なくすることができる。なお同図（１）では管状の反応室１８としたが、同図（２）に示すように矩形状の反応室１８としてもよい。
【００８９】
図３は第２フッ化処理部１４の具体的形態を示した概略図である。同図（１）に示すように反応室１８にＩＣ５０を投入する際には、当該ＩＣ５０のモールド５１側を包むようにカバー５２を装着する。このためＩＣ５０は接続用導通部５４側のみ露出した形態となるので、フッ化処理に用いるＨＦガスの供給量を少なくすることができる。さらにＨＦガスとの接触によって背面側のモールド５１に変色等が発生するのを防止することができる。
【００９０】
また同図（２）に示すようにＩＣ５０をカバー５２にて完全に覆うとともに、カバー５２に設けた露出孔５６から接続用導通部５４を露出させるようにしてもよい。このようにＨＦガス雰囲気中で接触用導通部５４のみ露出させれば、ＩＣ５０における他の部分はＨＦガスに全く触れることがないので、ＨＦガスの更なる使用量低減化と、変色等の発生を防止することができる。
【００９１】
図４は接合治具４２Ｕ、４２Ｄの具体的形態を示した概略図である。同図に示すように接合治具４２Ｕには真空吸着手段５８が備えられており、図示しない搬送手段によって移送されたＩＣ５０の背面側（モールド５１側）に密着させることでＩＣ５０の保持をなせるようにしている。また接合治具４２Ｕの下方には、接合対象となる半田ボール４８を保持可能とする接合治具４２Ｄが設けられている。当該接合治具４２Ｄは、接合治具４２Ｕに対面する平面にマスク６０を載せた形態となっており、このマスク６０には接続用導通部５４の位置に対応するように複数の貫通穴６２が形成されている。このため接合治具４２Ｄは上方より見ると多数の窪みが形成された形態となっている。ところで貫通穴６２はその内径が半田ボール４８の直径よりも大きく形成され、またその深さは半田ボール４８を入れた際、当該半田ボール４８が貫通穴６２の開口より突出するだけの寸法に設定される。そしてその寸法は、半田ボール４８を接続用導通部５４に接合させる際、当該半田ボール４８を押しつぶさすだけの寸法に設定される。
【００９２】
このように接合治具４２Ｕ、４２Ｄを構成すれば、半田ボール４８は貫通穴６２の深さに倣って一様に変形するので、接続用導通部５４から半田ボール４８の頂上までの高さを均一にすることができる。ここでマスク６０の材質にアルミを用いれば、当該アルミ材はフッ化しづらいことから半田ボール４８と貫通穴６２における内壁との接合力より、半田ボール４８と接続用導通部５４との接合力が強いことから、半田ボール４８が窪み内に残留することを防止することができる。またＩＣ５０におけるモールド５１の形状は接続用導通部５４の範囲において一定の厚みであることが望ましい。モールド５１の厚みを一定にすることで加圧時にＩＣ５０に反りが生じるのを防止することが可能となり、このため半田ボール４８を確実に接続用導通部５４に接合させることができる。
【００９３】
またＩＣ５０における接続用導通部５４と半田ボール４８（および貫通穴６２）との位置合わせは、接合用治具４２Ｕ側に付した目印を基準に位置合わせを行えばよい。図５は接続用治具４２Ｕ、４２Ｄの位置合わせを行うための構成を示した構成図である。同図によれば、ＩＣ５０における対角状に配置されたダミーの接続用導通部を目印６４とする。また接続用治具４２Ｄ側には前記目印６４を検出するためのマーキング検出手段となるＣＣＤ６６が設けられており、このＣＣＤ６６が検出した位置情報は接続用治具４２Ｕに設けられた図示しない移動手段に送られ、当該移動手段の稼働によって目印６４を移動させ、接続用導通部５４と半田ボール４８との位置合わせをなすようにしている。このように接続用治具４２Ｕ、４２Ｄの相対位置を検出するようにしたので、両者の位置合わせの精度を向上させることができる。
【００９４】
上述した第２フッ化処理部１４、接合治具４２Ｕ、４２Ｄの形態を応用することでＩＣ５０に半田ボール４８をつけ直す、いわゆるリペア工程にも適用することができる。
【００９５】
図６（１）は接続用導通部５４から半田ボール４８が欠落しているＩＣ５０の状態を示す説明図である。同図に示すように接続用導通部５４に半田ボール４８を接合したのち振動や衝撃等何らかの要因によって半田ボール４８が接続用導通部５４より脱落する可能性がある（図中ハッチング部）。図６（２）は周囲の半田ボール４８と干渉することなく単一の接続用導通部５４のみをフッ化処理する第２フッ化処理部１４の形態を示す。同図に示すように第２フッ化処理部１４は、内側管６８、外側管７０の２重管で構成する。そして内側管６８の開先位置を外側管７０の開先位置より引き込ませるよう段違いに配置するとともに、内側管６８の径を接続用導通部５４の径に対応させ、内側管６８よりＨＦガスを送気可能にした。このように第２フッ化処理部１４を構成したことにより、たとえ接続用導通部５４に幾つかの半田ボール４８が接合されていても、これら半田ボール４８に干渉することなく確実にリペア対象となる（再接合対象となる）接続用導通部５４にフッ化処理を行うことができる。またフッ化の対象となる接続用導通部５４以外にＨＦガスは触れることがないので当該ＨＦガスの使用量低減を行うことができる。
【００９６】
図７（１）はリペア工程の態様を示し、図７（２）はリペア工程に用いる接合治具４２Ｕ、４２Ｄの形態を示す。同図に示すように接合治具４２Ｄ側に設けられる穴マスク６０は、その中央に半田ボール４８を保持する貫通穴６２が一箇所設けられており、当該貫通穴６２の周囲、すなわち穴マスク６０における半田ボール４８が接合された接続用導通部５４と対面する位置には、半田ボール４８との干渉を避けるための逃げ穴７２が設けられている。また接合治具４２Ｕは図示しない移動手段によって、接合治具４２Ｄに対して平面方向に移動が可能となっている。このためＩＣ５０における半田ボール４８の欠落場所と貫通穴６２との位置を合わせ、対象となる接続用導通部５４と半田ボール４８とを合わせれば、接続用導通部５４に半田ボール４８を接合させることが可能になる。なおＩＣ５０に２箇所以上、半田ボール４８が欠落していれば、その都度接合治具４２Ｕを平面移動させ、１個ずつ半田ボール４８を接合させるようにすればよい。このように穴マスク６０に逃げ穴７２を設け、接合時に穴マスク６０とＩＣ５０に接続用導通部５４とを全面密着させたことから、ＩＣ５０に局部的な力が加わるのを防止することができ、このためＩＣ５０における加熱の片寄り、あるいはＩＣ５０の変形を防止することができる。
【００９７】
上記のごとく第１フッ化処理部１２、第２フッ化処理部１４、接合処理部１６における接合治具４２Ｕ、４２Ｄの具体的形態とその働きを示したが、これらを適時組み合わせることで、接続用導通部５４に半田ボール４８を接合させることができ、このためＩＣ５０に突起電極を形成することができる。
【００９８】
なお突起電極として半田ボール４８を用いたが、これは突起電極が形成されたＩＣ５０をさらに基板等にリフロー工程を用いて取り付けるためである。突起電極が形成されたＩＣ５０を上述の方法（フッ化処理し接合）で基板側に接合させるならば、突起電極を半田ボール４８にする必要は無く、例えば配線パターンが這わされたガラスの面上に突起電極を形成する場合などは、電気特性向上のため金ボールを用いるようにしてもよく、さらにその形状も球形だけでなく円柱状など用途に応じた様々な形態を用いるようにすればよい。
【００９９】
また上述した実施の形態では、突起電極の形成の対象物としてＩＣと半田ボールとしたが、その他の応用例として、ベアチップにおけるバンプ形成用に用いるようにしてもよい。すなわち従来においては、ベアチップにおけるバンプ形成は、多量のマスクや共通電極を必要としていた。しかし本装置を適用すれば、前述のマスクや共通電極形成のためのパターンを引き回す必要がない。このためベアチップに対して容易に突起電極を形成することができる。
【０１００】
なおこの接合のメカニズムは、次のように考えられる。被接合部材のフッ素と結合している表面部の原子は、他の被接合部材と接触することによりフッ素との結合が切れ、他の接合部材の原子と結合することにより接合が行なわれる。そして、結合が切れたフッ素は、フッ素を取り込みやすい被結合部材の内部に拡散して行くものと思われる。また前記実施の形態においては、ＨＦガスを用いてフッ化処理をする場合について説明したが、フッ酸を塗布したりフッ酸に漬けてフッ化処理を行なってもよい。
【０１０１】
そして、前記実施の形態においては、不活性ガスとしてＡｒガスを用いた場合について説明したが、不活性ガスはヘリウムやネオンなどの希ガスまたは窒素ガスであってもよい。さらに、前記実施の形態においては、ハロゲンがフッ素である場合について説明したが、ハロゲンは、接合する相手の相性や表面状態により、塩素やヨウ素、臭素などであってもよい。
【０１０２】
次に、上記実施形態をさらに具体化し、改良した実施形態について説明する。この実施形態において、先の上記実施形態に記載された第１フッ化処理部１２に対応するフッ化処理部が形成され、このフッ化処理部には図８に示すフッ化処理チャンバー１８０が設けられている。また、上記実施形態に記載された接合処理部１６に対応する接合処理部が形成され、この接合処理部には、図１０及び図１１に示す接合処理チャンバー１９０が設けられている。上記実施形態の第２フッ化処理部１４は設けられていてもいなくてもよい。
【０１０３】
この実施形態では、図８（１）に示すように、予め電気コンタクト用の金属粒である半田ボール４８を接合治具８０の表面上に形成された凹部８０ａ内に一つずつ収容することにより、上記のＩＣ５０に形成された接続用導通部５４の配列と対応するように配列した状態に保持し、上記フッ化処理チャンバー１８０内に導入する。ここで、接合治具８０は板状部材の表面に切削加工によって凹部８０ａを形成しているが、上述のように板状部材に貫通孔を形成したマスク部材を貼着することによって構成してもよい。接合治具８０の材質としては、ハロゲン耐性、半田との非反応性などの観点からステンレス鋼、セラミック、窒化アルミニウムなどが好ましい。凹部８０ａの深さは半田ボール４８の外径よりも浅く形成されており、半田ボール４８を凹部８０ａに収容したとき、半田ボール４８が接合治具８０の表面上から突出するように構成されている。本実施形態では接合治具８０をそのまま後述する接合工程においても用いるので、この場合凹部８０ａの深さは、後述する接合処理において充分に半田ボール４８をＩＣ５０の接続用導通部５４に加圧下において接合させることができるように半田ボール４８の外径よりも或る程度浅く形成する必要がある。
【０１０４】
次に、フッ化処理チャンバー１８０内を不活性ガスによって置換し、図８（２）に示すように、接合治具８０の上方から加圧板８１を降下させ、加圧板８１により半田ボール４８を加圧することにより、半田ボール４８の上部を平坦化する。この場合、半田ボール４８は加圧板８１により加圧されるので、図９（１）に示すように上部が平坦化され平坦面４８ａが形成される。なお、本実施形態のように加圧処理を施す場合、平坦面４８ａが形成されると同時に、凹部８０ａの内底面に接触している下部もまた平坦化され平坦面４８ｂが形成される。
【０１０５】
このようにして平坦面４８ａが形成されると、半田ボール４８の厚さ（高さ）ｄ₁は、球状の元の半田ボール４８の高さ（＝外径）ｄ₀よりも小さくなる。半田ボール４８のように球状の金属粒を導電部材として用いる場合、平坦化処理前後の厚さの比ｄ₁／ｄ₀は、０．６〜０．９の範囲内であることが好ましく、特に、０．７〜０．８８の範囲内であることが望ましい。これらの範囲を下回ると金属粒がつぶれすぎて後の接合処理が困難になり、突起電極としての形状も得られなくなる。これらの範囲を上回ると平坦化によって形成される平坦面の面積が小さくなり、平坦化処理による接合状態の向上、接合状態のばらつき低減、接合不良の低減などの効果が得られなくなる。具体的には、外径０．３５ｍｍの半田ボールの場合には平坦化処理後の厚さを約０．３ｍｍ、外径０．７６ｍｍの半田ボールの場合には平坦化処理後の厚さを約０．６ｍｍとする。なお、接合治具８０は後述するようにそのまま接合処理においても用いられるため、凹部８０ａの深さｄ₂は平坦化処理後の半田ボール４８の厚さｄ₁よりもさらに小さくなっている。すなわち、平坦化処理後においても半田ボール４８の上部は接合治具８０の表面（凹部８０ａの開口縁部）から突出している。
【０１０６】
なお、平坦化処理の利点としては接触面積が増大して接合状態が向上し、接合強度が高められる他に、上記のように複数配列された半田ボール４８を一括して平板などにより塑性変形させて平坦化する場合の利点として、複数の半田ボール４８の平坦面４８ａが相互に同じ高さになり、同一平面上に配置されるので、接合処理の際に加圧力が均等に加わり、接合状態のばらつきが低減され、接合不良などが発生しにくくなるという点がある。
【０１０７】
次に、このように平坦化処理が施された半田ボール４８の平坦面４８ａに対して図８（３）に示すようにフッ化処理を施す。このフッ化処理は、上記のようにフッ化水素（ＨＦ）と水蒸気とを混合したガスをフッ化処理チャンバー１８０内に導入し、このガスを平坦面４８ａに接触させることにより行われる。平坦面４８ａは加圧によって平坦化されているため、元の半田ボールの外皮が破壊され内部が露呈していることにより、上述のハロゲン化反応が促進され、より効果的に処理が行われる。また、平坦面４８ｂが形成されることにより、フッ化処理時から接合処理時まで、半田ボール４８を凹部８０ａ内にて転動しないため、ハロゲン化された平坦面４８ａが確実に後述する接続用導通部に接触し、確実且つ強力に接合されるという利点も有する。
【０１０８】
なお、平坦化処理としては、上記のように加圧による処理の他に、金属粒の接合面となるべき部分を除去して平坦面を形成することによって行うこともできる。この場合にも、形成された平坦面は金属粒の外皮が除去されたものであるため、ハロゲン化が促進される。
【０１０９】
上記のハロゲン化処理は、半田ボールの場合、例えば、処理時間として３０〜９０秒、フッ化物の濃度としてフッ化水素が４４００ｐｐｍ、半田ボールの表面温度を９０℃で行うことができる。処理時間は後述する接合条件との兼ね合いで上記の範囲で調整して行う。
【０１１０】
図９（２）は上記接合治具８０に形成される別の凹部８０ｂを示したものである。この凹部８０ｂの内底面には、半田ボール４８の外面（球面）とほぼ合致した凹曲面８０ｃが形成されており、半田ボール４８によって形成される突起電極の頂部形状を平坦化することなく、すなわち、平坦面４８ｂを形成することなく、平坦面４８ａのみを形成することができる。したがって、この場合には、上記の接続用導通部との接触面積の増大、ハロゲン化反応の促進、凹部内における半田ボールの転動防止などの効果の他に、突起電極の頂部の形状を元の半田ボール４８の外面形状を損なうことなく形成できるという利点がある。
【０１１１】
図９（３）及び（４）は、上記半田ボール４８のような球状の金属粒の代わりに用いることのできる金属粒の形状例を示すものである。図９（３）に示すものは円柱状の金属粒であり、図９（４）に示すものは直方体（立方体でもよい。）の金属粒である。このような形状の金属粒を用いることによって、上記の平坦化処理は不要となる。
【０１１２】
次に、上記のようにしてハロゲン化された表面を備えた半田ボール４８をＩＣ５０に接合させる工程について説明する。この工程は、図１０に示す接合処理チャンバー１９０内にて実施される。接合処理チャンバー１９０には窒素ガスなどの不活性ガスが充填されている。上述のように半田ボール４８を配列保持した接合治具８０は、接合処理チャンバー１９０内のホルダ９１に取り付けられる。ホルダ９１は上下に伸びるガイドロッド９２に沿ってスライド可能に構成され、図示しない駆動装置により昇降動作するようになっている。接合治具８０の上方には、図示しない駆動機構によって昇降動作する加圧ヘッド９３が配置されている。加圧ヘッド９３の内部にはヒータ９４が設けられている。加圧ヘッド９３の下部には真空吸着手段などで構成される把持部９５が設けられ、ＩＣ５０が把持されている。ＩＣ５０は上述のものと全く同様のものであり、その下面に露出した接続用導通部５４が格子状に配列された状態に設けられている。
【０１１３】
また、接合治具８０の下方には、平坦な表面を備えたテーブル９６が配置されており、このテーブル９６の内部にはヒータ９７が設けられている。さらに、接合治具８０と上方の加圧ヘッド９３との間には断熱板９８が配置され、接合治具８０と下方のテーブル９６との間にも断熱板９９が配置されている。これらの断熱板９８，９９は、いずれも図示のように接合治具８０の上下の遮蔽位置と、接合治具８０の上下位置からずれた待避位置との間において、略水平方向に移動可能に構成されている。
【０１１４】
この接合処理部においては、まず、断熱板９８，９９を図示のように接合治具８０の上下位置に配置し、ヒータ９４，９７を用いて予め加圧ヘッド９３及びテーブル９６を加熱しておく。半田ボール４８を用いる場合には、加圧ヘッド９３の加熱設定温度は１００〜１８０℃、テーブル９６の加熱設定温度は０〜１８０℃である。このとき、テーブル９６は補助的な加熱を行うように設定されているが、加圧ヘッド９３とテーブル９６を共に同程度に加熱してもよく、テーブル９６を主体的な加熱手段とし、加圧ヘッド９３側を補助的な加熱手段としてもよい。なお、これらの加熱設定温度は、上述と同様に、接合される半田ボール４８と接続用導通部５４のいずれの融点よりも低い温度に設定される。本実施形態の接合態様は固体接合であり、接合界面を溶融させることなく接合することができるからである。
【０１１５】
また、この状態では、断熱板９８，９９によって上方及び下方から放射される熱を遮断することができるので、ハロゲン化処理を施された半田ボール４８の表面が加熱されてハロゲン化された表面からハロゲンが離脱したり、酸化反応などにより表面状態が接合に適さない状態に変質したりすることを防止できる。なお、断熱板９８，９９は放射熱により加熱されるので、内部に液体通路や空気通路などを設け、液体冷却若しくは空冷などを施すことが好ましい。特に加圧ヘッド９３又はテーブル９６と接合治具８０との間の距離が短くなると、断熱板９８，９９自体が過熱して放射熱源となってしまうからである。逆に、当該距離を長くとると、加圧ヘッド９３や接合治具８０の移動距離が長くなり、移動機構の精度が低下して接合面方向の位置ずれが発生しやすくなる。したがって、断熱板はなるべく近距離でも充分に熱の遮断ができるようになっていることが好ましい。
【０１１６】
次に、上方の断熱板９８を図示矢印▲１▼に示すように待避させ、加圧ヘッド９３を図示矢印▲２▼に示すように降下させてＩＣ５０の接続用導通部５４を半田ボール４８に接触させる。ここで、接合治具８０の凹部８０ａは、予めＩＣ５０の表面（図示下面）に配列された接続用導通部５４の配列状態に対応させた状態に配列形成されているため、ＩＣ５０を降下させ、接触させるだけで各接続用導通部５４と半田ボール４８とが接触する。加圧ヘッド９３は、この時点で既に接合治具８０に対して或る程度の加圧力を及ぼすように構成してもよく、また、この時点ではまだ、充分な加圧力を及ぼさないようにしてもよい。
【０１１７】
次に、下方の断熱板９９を図示矢印▲３▼に示すように待避させた後に、ホルダ９１をガイドロッド９２に沿って降下させる。そして、接合治具８０の下面をテーブル９６の表面に接触させて、熱伝導によって間接的に半田ボール４８と接続用導通部５４との界面を加熱する。この状態により、上下の部材に挟持された半田ボール４８と接続用導通部５４とは安定した加圧力及び加熱を受けるので、両者の接合が進む。例えば、加圧力は半田ボール４８が外径０．３５ｍｍの場合、２００ｇ／個であり、接合に要する時間は１５秒以下である。
【０１１８】
接合処理が完了すると、ホルダ９１は上昇し、加圧ヘッド９３はＩＣ５０を解放して上方へ待避する。そして、断熱板９８，９９が繰り出して放射熱を遮断する。したがって、接合処理後にも余分な加熱を行わずに迅速に処理を終了することができる。
【０１１９】
この接合処理方法では、多数の半田ボールと接続用導通部の組に対して一括して熱を加えることができ、しかも、熱源は一定の温度に制御されているため、接合界面に対する加熱の均一性を確保することができ、接合状態を均一化することができる。他の加熱方法としては、レーザー光などを照射して個別的に加熱することも可能であるが、加熱状態の均一性を確保するという観点から見ると本実施形態の方が優れている。
【０１２０】
なお、図８（３）に示すハロゲン化処理を施された後、図１０に示す接合処理を行うまでの間は、少なくともハロゲン化された半田ボール４８の上部（平坦面）を大気に曝さないように、不活性ガス中に保持することが好ましい。また、ハロゲン化処理から接合処理までの時間はなるべく短い方が好ましく、例えばハロゲン化処理が終了してから３０分以内に接合を完了させることが望ましい。このようにすると、接合不良を著しく低減することができる。ちなみに、ハロゲン化処理から接合処理までの間に大気中（酸素を含む雰囲気中）に曝したり、３０分を越える時間が経過したりすると、接合不良が発生しやすくなることが確認されている。
【０１２１】
次に、図１１を参照して別の接合処理方法について説明する。この接合処理方法では、基本的に図１０に示す接合処理装置と同様の構造を備えた装置を用いることができるが、接合処理における加熱の方法が異なる。まず、加熱ヘッド９３のヒータ９４及びテーブル９６のヒータ９７は当初電力供給が行われず、発熱していない。この状態で、図示矢印▲１▼に示すように加圧ヘッド９３を降下させて接合治具８０に配置された半田ボール４８に接続用導通部５４を圧接させる。そして、さらに図示矢印▲２▼に示すように加圧ヘッド９３と接合治具８０を一体的に降下させて、接合治具８０をテーブル９６にも接触させる。そして、この状態で、ヒータ９４，９７に通電し、発熱を開始する。
【０１２２】
この加熱方法（パルスヒート方式）では、上記の加熱方法（コンスタントヒート方式）とは異なり、接合前に接合界面となるハロゲン化された表面（本実施形態の例では半田ボール４８の表面）を加熱してしまうことがないため、ハロゲン化された表面を変質させることなく、接合処理を行うことができる。ただし、このパルスヒート方式ではコンスタントヒート方式よりも接合界面を加熱するまでにタイムラグが発生するので、サイクルタイムが長くなる場合があり、また、加熱温度の均一性を得るために接合処理面積よりも大きめの加熱手段が必要となる場合もある。
【０１２３】
図１２（１）には、このようなパルスヒート方式の加熱方法によるヒータの制御温度とワーク（この場合には接合界面）との温度変化を示す。この場合、ワークの温度が所望の接合温度に到達し、必要な時間だけ接合温度が維持されることを経験的に若しくは測定などによって確認してヒータの発熱時間（パルス幅）を決定する。接合処理の前後においては図示のように接合界面には余分な加熱が施されない。一方、図１２（２）に示すように、コンスタントヒート方式の場合には、予め一定温度に加熱された熱媒に接触させることによってワークを加熱するため、接合処理前後の温度を充分に低減するには上述の断熱板のような熱伝達抑制手段が必要となる。このような熱伝達抑制手段を設けなければ、図示の特性よりもさらに接合処理前後の温度抑制が困難になる。特に、接合処理前にハロゲン化された表面を加熱してしまうと、加熱温度が低くても接合状態が悪化するので、接合不良が頻発する可能性がある。
【０１２４】
なお、上記各実施形態は本発明を実現するための例示に過ぎず、本発明は上記図示例に限定されることなく、本発明の要旨を変更しない範囲で種々変更することが可能である。
【０１２５】
【発明の効果】
本発明は、以上のように構成されているので、以下に記載されるような効果を奏する。
【０１２６】
請求項１に記載の突起電極の形成方法によれば、電気部品に設けた接続用導通部の表面に導電性部材を接合する突起電極の形成方法であって、前記接続用導通部と前記導電性部材との少なくとも一方の表面をハロゲン化し、これを前記接続用導通部と前記導電性部材との界面に位置するよう接触させ、固体接合させ前記電気部品に突起電極を形成することとしたので、２つの接合部材を溶融させずに接合させることができる。このためフラックスを不要とすることができ、さらに洗浄工程も削除することができる。また突起電極を形成するためにマスクや配線パターンの引き回しを形成する必要を無くすことができる。
【０１２７】
また請求項８に記載の突起電極の形成装置によれば、電気部品に設けた接続用導通部と導電性部材との少なくとも一方の表面をハロゲン化するハロゲン化処理部を設けるとともに、ハロゲン化された表面を界面として前記接続用導通部と前記導電性部材とを密着させる接合処理部を設けるように構成したので、上記と同様、フラックスを不要とすることができ、さらに洗浄工程も削除することができる。また突起電極を形成するためにマスクや配線パターンの引き回しを形成する必要を無くすことができる。
【０１２８】
さらに請求項１４に記載の突起電極の形成部品によれば、導電性部材を電気部品に設けた接続用導通部に接合させた突起電極の形成部品であって、接合は少なくとも一方の表面がハロゲン化された導電性部材と接続用導通部との密着によってなされるとともに、密着に要する加圧により接続用導通部からの導電性部材の高さが均一であることから、形成部品を例えば基板等に載せた際、導電性部材と基板等との間に隙間が生じることがない。このためリフロー工程に投入しても導電性部材と基板等との間に接続不良が発生するのを防止でき、形成部品実装の信頼性を向上させることができる。
【図面の簡単な説明】
【図１】本発明に係る実施形態である突起電極の形成装置の構成を示す説明図である。
【図２】第１フッ化処理部１２の具体的構造（１）及び（２）を示した概略図である。
【図３】第２フッ化処理部１４の具体的構造（１）及び（２）を示した概略図である。
【図４】接合治具４２Ｕ、４２Ｄを用いた接合過程の具体的態様（１）、（２）及び（３）を示した概略図である。
【図５】接続用治具４２Ｕ、４２Ｄの位置合わせを行うための構成を示した構成図（１）及び（２）である。
【図６】接続用導通部５４から半田ボール４８が欠落しているＩＣ５０の状態を示す説明図（１）及び周囲の半田ボール４８と干渉することなく単一の接続用導通部５４のみをフッ化処理する第２フッ化処理部１４の形態を示す構成図（２）である。
【図７】リペア工程を行う状態を示す説明図（１）及びリペア工程に用いる接合治具４２Ｕ、４２Ｄの形態を示す説明図（２）である。
【図８】本発明に係る別の実施形態における平坦化処理及びハロゲン化処理の方法並びに装置構成を模式的に示す概略説明図（１）〜（３）である。
【図９】図８に示す接合治具に配列された半田ボールの変形状態を示す拡大説明図（１）、別の接合治具の構造を示す拡大説明図（２）、別の金属粒の形状を示す拡大斜視図（３）及び（４）である。
【図１０】本発明に係る別の実施形態における接合処理の方法及び接合処理装置の構造を示す概略構成図である。
【図１１】本発明に係るさらに別の実施形態における接合処理の方法及び接合装置の構造を示す概略構成図である。
【図１２】図１０及び図１１に示す接合処理方法における加熱方式によるヒータ温度及びワーク温度の経時変化を示すグラフである。
【図１３】集積回路の構成を示す断面説明図である。
【符号の説明】
１ 集積回路
２ チップ
２Ａ 電極
３ 金ワイヤ
４ ランド
５ レジスト
６ 半田ボール
１０ 突起電極の形成装置
１２ 第１フッ化処理部
１４ 第２フッ化処理部
１６ 接合処理部
１８ 反応室
２０ 配管
２２ 配管
２４ ＨＦガス供給部
２６ 蒸気発生部
２８ 半田ボール保管庫
３０ マガジンローダ
３２ チャンバ
３４ アルゴンガス供給部
３６ テーブル
３８ 抑え板
４０ 上下シリンダ
４２Ｕ、Ｄ 接合治具
４４ ヒータ
４６ マガジンアンローダ
４８ 半田ボール
５０ ＩＣ
５１ モールド
５２ カバー
５４ 接続用導通部
５６ 露出孔
５８ 真空吸着手段
６０ 穴マスク
６２ 貫通穴
６４ 目印
６６ ＣＣＤ
６８ 内側管
７０ 外側管
７２ 逃げ穴
８０ 接合治具
８０ａ 凹部
９１ ホルダ
９２ ガイドロッド
９３ 加圧ヘッド
９４、９７ ヒータ
９５ 把持部
９６ テーブル
１８０ フッ化処理チャンバー
１９０ 接合処理チャンバー[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method and apparatus for forming a protruding electrode and an electrode forming component, and in particular, a protrusion that does not require a flux when forming the protruding electrode and has no restriction such as providing a common electrode for forming the protruding electrode. The present invention relates to an electrode forming method, a forming apparatus, and an electrode forming component.
[0002]
[Prior art]
When mounting an electrical component on a target object, a projection may be formed in a connection conductive portion of the electrical component, and the electrical component and the target object may be connected via the projection.
[0003]
As an example of the above, a case where the electrical component is an integrated circuit and the object is a printed board will be described.
[0004]
FIG. 13 is an explanatory cross-sectional view showing the configuration of the integrated circuit. As shown in the figure, in the integrated circuit 1, the gold wire 3 is drawn from the electrode 2 </ b> A of the chip 2, and the tip of the gold wire 3 is connected to the land 4 provided on the bottom surface of the integrated circuit 1. Conduction between the chip 2 and the outside thereof can be achieved. By the way, since such a land 4 is surrounded by the resist 5, the land 4 cannot be directly connected to the printed circuit board to be connected. A solder ball 6 serving as a conductive member is connected, and connection to the printed circuit board side is performed by the protrusion of the solder ball 6 (via the solder ball 6).
[0005]
Further, as a second example of forming protrusions on the connecting conductive parts of the electrical component, there is a bump forming method on the chip in the TAB manufacturing technique. The bumps are provided to prevent the inner leads from coming into contact with the periphery of the chip when connecting the inner leads to the chip and to connect only the electrodes of the chip. Such bumps are formed by forming a barrier metal (multilayer metal film) on a chip electrode and performing a plating process thereon, or by a wire bump method.
[0006]
[Problems to be solved by the invention]
However, in the first example in which the protrusion is formed in the connection conductive portion of the electrical component, it is necessary to melt the solder ball 6 in order to join the solder ball 6 to the land 4. For this reason, a flux has to be used, and a cleaning step is required to remove the flux after joining.
[0007]
Further, in the second example in which protrusions are formed in the conductive parts for connecting electrical parts, a large number of masks are required for bump formation by the plating process, and since common plating is used, a common electrode is required and wiring is restricted. was there. In addition, due to the characteristics of the alloy, there is a problem that different metals having adhesion and barrier properties must be formed in multiple layers.
[0008]
The present invention pays attention to the above-mentioned conventional problems, and does not require a flux at the time of forming the protruding electrode, and there is no restriction such as providing a common electrode for forming the protruding electrode. It aims at providing an electrode formation component.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, the bump electrode forming apparatus according to claim 1 is provided with a halogenation treatment portion for halogenating at least one surface of the connection conducting portion and the conductive member provided in the electric component. And a bonding treatment portion for bringing the connection conducting portion and the conductive member into close contact with each other with the halogenated surface as an interface, and the halogen treatment portion is constituted by a double tube comprising an inner tube and an outer tube, and the groove of the inner tube is formed. It is characterized in that the position of the inner tube is different from that of the groove position of the outer tube, and the diameter of the inner tube is made to correspond to the diameter of the connecting conductive portion, so that halogen gas can be supplied from the inner tube.
[0024]
According to the protruding electrode forming apparatus according to claim 1, even if several conductive members are already joined to the connection conductive portion, the connection conductive continuity is ensured without interfering with these conductive members. A new conductive member can be joined to the part. Further, since the halogen gas is introduced from the inner tube and discharged from between the outer tube and the inner tube, the halogen gas is not touched except for the connection conducting portion to be halogenated. For this reason, it is possible to prevent a failure such as discoloration from occurring in other portions.
[0025]
According to the protruding electrode forming apparatus of the first aspect, halogen can be added to at least one surface of the connecting conductive portion or the conductive member. Since the bonding conductive portion and the conductive member are brought into close contact with the surface halogenated in the bonding processing portion as an interface, the conductive member can be bonded to the connection conductive portion without melting the conductive member. it can. Further, since the conductive member is not melted, it is not necessary to use a flux, and the step of cleaning the flux can be eliminated. In addition, since bonding is possible without melting the bonding interface, it is not necessary to apply a high temperature to the bonding interface and its surroundings, so that a film that deteriorates electrical contact characteristics is formed on the surface of the protruding electrode. Undesirable alteration of electrodes and electrical components can be avoided.
[0026]
According to a second aspect of the present invention, there is provided a projection electrode forming apparatus comprising a halogen gas supply chamber and a halogen gas supply chamber provided with an inlet and an outlet for a conductive member. It is characterized by the formation of a slope between the two.
[0027]
According to the bump electrode forming apparatus of the second aspect, the conductive member moves while rolling from the inlet to the outlet in the chamber filled with the halogen gas, so that the surface of the conductive member is uniformly halogenated. In addition, the conductive member can be continuously charged and the supply amount of the halogen gas can be reduced.
[0028]
According to a third aspect of the present invention, there is provided a projection electrode forming apparatus comprising: a halogen treatment unit including a halogen gas supply chamber; and a cover that can be placed in the halogen gas supply chamber and that can surround an electrical component. An exposure hole corresponding to the conductive portion is provided so that the connection conductive portion can contact the atmosphere of the halogen gas supply chamber.
[0029]
According to the projection electrode forming apparatus of the third aspect, only the connection conducting portion is in contact with the atmosphere of the halogen gas supply chamber, and the other parts of the electrical components are not in contact with the atmosphere of the halogen gas supply chamber. For this reason, it is possible to prevent discoloration or the like from occurring in portions other than the connection conducting portion in the electrical component. Since the exposure range is only the connection conducting portion, the supply amount of halogen gas can be reduced.
[0030]
According to a fourth aspect of the present invention, there is provided the protruding electrode forming apparatus, wherein the bonding processing portion is provided with the conductive member storage portion and the conductive member storage portion provided above the conductive member storage portion and can be pressed against the conductive member storage portion. The electrical component pressing portion is provided, and a recess corresponding to the connection conducting portion is provided in the conductive member housing portion, and the recess depth is set so that the conductive member protrudes from the recess.
[0031]
According to the protruding electrode forming apparatus of the fourth aspect, when the electric component pressing portion is lowered, the connection conducting portion presses the conductive member. The connecting conductive portion is pressed against the conductive member until the electrical component pressing portion comes into contact with the conductive member storage portion. At this time, the conductive member is uniformly deformed according to the depth of the recess. The height from the conductive part for connection to the top of the conductive member can be made uniform.
[0034]
The protruding electrode forming apparatus according to claim 5 is characterized in that the electrical component is a bare chip, and the conductive member to be brought into close contact with the connection conductive portion is for bump formation in the bare chip.
[0035]
According to the protruding electrode forming apparatus of the fifth aspect, it is not necessary to provide a mask or a common electrode for forming a bump, so that restrictions for wiring routing can be eliminated. Furthermore, it is possible to eliminate the restriction of forming different kinds of metals in multiple layers.
[0052]
In the protruding electrode forming apparatus, the conductive member is a metal particle made of a metal material for forming an electrical contact. The metal particles are preferably solder balls.
[0053]
According to this protruding electrode forming apparatus, since the conductive member is a metal particle made of a metal material for forming an electrical contact, the protruding electrode of the electrical component is easily joined to the terminal of the other electrical member, An electrical contact can be constructed. As such metal particles, there can be used solder having various alloy compositions (lead-containing solder, lead-free solder), or particles containing metals or alloys that do not interfere with electrical contact properties such as gold and gold-tin. However, solder balls are particularly common. In this case, it is possible to join the electrical component and the printed circuit board etc. by mounting the electrical component to which the solder ball is joined on a printed circuit board or the like and through a normal reflow process.
[0054]
In the protruding electrode forming apparatus, it is preferable that the connection conducting portions are arranged in a lattice pattern on the surface of the electrical component.
[0055]
According to this protruding electrode forming apparatus, the heat applied to the electrical component is less than the melting point of the conductive member, so that thermal damage is reduced. For this reason, it becomes possible to ease the heat resistance conditions of the electrical component itself, and for example, the selection of the package member can be expanded.
[0056]
In the protruding electrode forming apparatus, the bonding processing section preferably has a heating means capable of heating the interface to a temperature lower than any melting point of the connection conducting section and the conductive member.
[0057]
According to this protruding electrode forming apparatus, the reaction during bonding can be promoted, bonding can be performed in a short time, and bonding strength can be increased.
[0058]
The protruding electrode forming apparatus is characterized in that the heating means substantially heats the interface after a time point when the connecting conductive portion and the conductive member are brought into contact with each other. As a specific configuration in this case, a heat insulating member is disposed between the heat source and at least one of the connecting conductive portion and the conductive member before the connecting conductive portion and the conductive member are in contact with each other. It is a structure which can move or exclude the said heat insulation member after the time when the conduction | electrical_connection part and a conductive member contact. Moreover, it is a structure which can start the heat_generation | fever of a heating means after the time of the connection conduction | electrical_connection part and a conductive member contacting.
[0059]
In this projection electrode forming apparatus, the bonding processing unit transfers heat to the surface so that the halogenated surface is not substantially heated before the connection conducting part and the conductive member are brought into contact with each other. It has the heat-transfer suppression means which suppresses. In this case, the heat transfer suppressing means includes a heat insulating member arranged in a heat path from a heat source to the connection conducting portion and / or the conductive member. This heat insulating member may reduce either heat radiation or heat conduction, or may reduce both.
[0060]
In the protruding electrode forming apparatus, it is preferable that the bonding processing section has a pressurizing means for increasing the contact pressure at the interface.
[0061]
According to this protruding electrode forming apparatus, by increasing the contact pressure, the adhesion between the connecting conductive portion and the conductive member is improved, and the bonding strength can be further increased.
[0062]
In the protruding electrode forming apparatus, the bonding processing section includes an inert gas supply chamber in which an electric component and a conductive member are arranged and an inert gas is supplied.
[0063]
According to this protruding electrode forming apparatus, when bonding is performed in the inert gas supply chamber, oxidation of the connecting conductive portion and the conductive member can be prevented, and the bonding strength can be improved.
[0064]
Preferably, the protruding electrode forming apparatus is configured to be able to hold the surface in an inert gas atmosphere from the halogenation of the surface to the contact between the connecting conductive portion and the conductive member. .
[0065]
By carrying out like this, since the alteration of the halogenated surface can be suppressed by maintaining in the atmosphere of the inert gas until the surface is contacted after being halogenated, the bonding state can be improved. In this case, it is possible to further improve the bonding state by holding in the inert gas until the bonding is completed after the contact as described in claim 8.
[0066]
It is preferable that the protruding electrode forming apparatus has a flattening means for flattening a surface of the conductive member to be bonded to the connection conducting portion.
[0067]
This protruding electrode forming apparatus has an array holding member that holds and arranges a plurality of the conductive members in correspondence with the arrangement state of the plurality of connecting conductive portions arranged, and holds the arrangement holding members. It is preferable that the surface of the conductive member is flattened in a state where it is formed, and then bonded to the connection conducting portion while being held by the array holding member.
[0068]
In this way, it is possible to perform a flattening process and a bonding process while holding the conductive members on the array holding member, so that it is not necessary to perform a rearrangement operation of the conductive members. The joining process can be easily performed without the need to arrange the portions.
[0069]
The protruding electrode forming apparatus is preferably configured to flatten the surface of the conductive member and then to halogenate the surface before joining the conductive portion for connection.
[0070]
In this case, since the halogenation process is also performed on the array holding member, the process can be further easily performed, and the bonding process can be easily performed without the necessity of aligning the halogenated surface portions.
[0071]
In the protruding electrode forming apparatus, the surface of the recess is preferably made of an aluminum material.
[0072]
According to this projection electrode forming apparatus, since the aluminum material is difficult to be halogenated, the bonding force between the conductive member and the connecting conductive portion is stronger than the bonding force between the conductive member and the inner wall of the recess. It is preferable to prevent the sex member from remaining in the recess.
[0073]
The protruding electrode forming apparatus attaches a marking for alignment to the surface of the electrical component having the connection conductive portion, and provides a marking detection means on the conductive member storage portion side, and the electrical component pressing portion has a marking detection means. It is preferable to provide moving means connected to the.
[0074]
According to this protruding electrode forming apparatus, since the relative position between the electric component pressing portion and the conductive member storage portion is detected, it is possible to improve the alignment accuracy of both.
[0075]
The protruding electrode forming apparatus provides a single recess in the central region of the conductive member storage portion, and provides a clearance hole having a diameter larger than that of the conductive member at the position of the connecting conductive portion corresponding to the periphery of the recess. It is preferable.
[0076]
According to this projection electrode forming apparatus, even if several conductive members are already joined to the connecting conductive portion, it is possible to ensure that the new conductive portion is securely connected to the empty connecting conductive portion without interfering with these conductive members. The adhesive member can be joined.
[0077]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a method and apparatus for forming a protruding electrode and a component for forming a protruding electrode according to the present invention will be described in detail with reference to the drawings.
[0078]
FIG. 1 is an explanatory view showing a configuration of a protruding electrode forming apparatus according to the present embodiment.
This apparatus forms a protruding electrode by bonding a solder ball to an IC connection conducting portion. As shown in the figure, the protruding electrode forming apparatus 10 (hereinafter referred to as forming apparatus 10) is a halogenated element. It has the 1st fluorination process part 12 and the 2nd fluorination process part 14 which are a process part, and the joining process part 16. The first fluorination treatment section 12 and the second fluorination treatment section 14 are for adding fluorine (F) to the surfaces to be joined, that is, the IC connection conduction section and the solder balls. The reaction chamber 18 is a halogen gas supply chamber for supplying hydrogen fluoride (HF) gas.
[0079]
An HF gas supply unit 24 and a steam generation unit 26 are connected to the reaction chamber 18 via pipes 20 and 22 so that a mixed gas of HF gas and water vapor is supplied. In addition, a solder ball storage 28 is provided in the front stage of the first fluorination processing unit 12, and a magazine loader 30 is provided in the front stage of the second fluorination processing unit 14.
[0080]
Then, a solder ball can be continuously supplied from the ball storage 28 to the first fluorination processing unit 12, and an IC can be continuously supplied from the magazine loader 30 to the second fluorination processing unit 14. By the way, in the present apparatus 10, the first fluorination processing section 12 and the second fluorination processing section 14 are provided, and the fluorination processing of the solder ball and the IC connection conduction section is performed. There is no particular concern and only one of them may be fluorinated.
[0081]
When the conductive part for connecting a solder ball or IC is exposed to a mixed gas of HF gas and water vapor, HF and H ₂ O on these surfaces,
[0082]
[Chemical 1]

[0083]
Of the fluorine ion (F ^- ) Reacts with the solder ball or the connecting conductive portion of the IC, and the surface is fluorinated. By the way, since the conductive part for connecting the solder ball and the IC is a metal, the surface is covered with a natural oxide film. ^- And the surface is fluorinated, or a surface having a mixed composition of fluorine and oxygen is formed.
[0084]
The apparatus 10 has a conveying means (not shown) so that a fluorinated solder ball or IC can be carried into the bonding processing section 16. The bonding processing unit 16 includes a chamber 32 to which an argon gas supply unit 34 is connected. The chamber 32 can be filled with argon gas (inert gas).
[0085]
In the chamber 32, a table 36 and a holding plate 38 are provided so as to overlap each other, and a pressurizing upper and lower cylinder 40 is connected to the holding plate 38. Here, the table 36 and the holding plate 38 are provided with joining jigs 42U and 42D, and by bringing them into close contact, solder balls can be joined to the IC. In addition to the contact operation, when the upper and lower cylinders 40 are operated, the interface is pressurized, so that the joining of both is promoted. In addition, a heater 44 as a heating means is provided at the lower portion of the chamber 32 so that the solder balls and the IC are controlled to be heated to a predetermined temperature so as to promote the bonding between them.
[0086]
Further, a magazine unloader 46 is provided at the subsequent stage of the bonding processing unit 16 so that the IC to which the solder balls are bonded can be stored again.
[0087]
Here, the specific form of the joining jigs 42U and 42D in the first fluorination treatment unit 12, the second fluorination treatment unit 14, and the joining treatment unit 16 is shown.
[0088]
FIG. 2 is a schematic view showing a specific form of the first fluorination processing unit 12. As shown in FIG. 1A, the reaction chamber 18 is formed in a tubular shape and tilted. When the first fluorination portion 12 is formed in this manner, the solder ball 48 is fluorinated while rolling from the inlet to the outlet of the tubular end, so that the surface of the solder ball 48 is uniformly fluorinated. In addition, the solder balls 48 can be continuously charged, and the supply amount of HF gas can be reduced. Although the tubular reaction chamber 18 is shown in FIG. 1A, a rectangular reaction chamber 18 may be used as shown in FIG.
[0089]
FIG. 3 is a schematic view showing a specific form of the second fluorination processing unit 14. As shown in FIG. 1A, when the IC 50 is put into the reaction chamber 18, a cover 52 is attached so as to wrap the IC 51 on the mold 51 side. For this reason, since the IC 50 is exposed only on the connection conducting portion 54 side, the supply amount of HF gas used for the fluorination treatment can be reduced. Furthermore, it is possible to prevent discoloration or the like from occurring in the mold 51 on the back side due to contact with HF gas.
[0090]
Further, as shown in FIG. 2B, the IC 50 may be completely covered with the cover 52, and the connection conducting portion 54 may be exposed from the exposure hole 56 provided in the cover 52. If only the contact conducting part 54 is exposed in the HF gas atmosphere in this way, the other parts of the IC 50 do not come into contact with the HF gas at all. Therefore, the use amount of the HF gas is further reduced and the occurrence of discoloration or the like occurs. Can be prevented.
[0091]
FIG. 4 is a schematic view showing a specific form of the joining jigs 42U and 42D. As shown in the figure, the bonding jig 42U is provided with a vacuum suction means 58, and the IC 50 can be held by being in close contact with the back side (the mold 51 side) of the IC 50 transferred by a conveying means (not shown). I am doing so. A joining jig 42D that can hold the solder balls 48 to be joined is provided below the joining jig 42U. The joining jig 42D has a form in which a mask 60 is placed on a plane facing the joining jig 42U. The mask 60 has a plurality of through holes 62 corresponding to the positions of the connecting conductive portions 54. Is formed. For this reason, the joining jig 42D has a form in which a number of depressions are formed when viewed from above. By the way, the through hole 62 is formed so that its inner diameter is larger than the diameter of the solder ball 48, and the depth is set such that the solder ball 48 protrudes from the opening of the through hole 62 when the solder ball 48 is inserted. Is done. The dimensions are set so as to squeeze the solder balls 48 when the solder balls 48 are joined to the connection conducting portions 54.
[0092]
If the joining jigs 42U and 42D are configured in this way, the solder ball 48 is uniformly deformed following the depth of the through hole 62, so that the height from the connecting conductive portion 54 to the top of the solder ball 48 is increased. It can be made uniform. Here, if aluminum is used as the material of the mask 60, the aluminum material is difficult to be fluorinated, so that the bonding force between the solder ball 48 and the inner wall of the through hole 62 has a bonding force between the solder ball 48 and the connecting conductive portion 54. Since it is strong, it is possible to prevent the solder ball 48 from remaining in the recess. Further, it is desirable that the shape of the mold 51 in the IC 50 is a constant thickness in the range of the connection conducting portion 54. By making the thickness of the mold 51 constant, it is possible to prevent the IC 50 from warping during pressurization, so that the solder ball 48 can be reliably bonded to the connection conducting portion 54.
[0093]
Further, the alignment of the connecting conductive portion 54 and the solder ball 48 (and the through hole 62) in the IC 50 may be performed with reference to a mark attached to the joining jig 42U. FIG. 5 is a configuration diagram showing a configuration for aligning the connection jigs 42U and 42D. According to the figure, the dummy connecting conductive portions arranged diagonally in the IC 50 are designated as marks 64. Further, a CCD 66 serving as a marking detection means for detecting the mark 64 is provided on the connection jig 42D side, and positional information detected by the CCD 66 is a moving means (not shown) provided in the connection jig 42U. The mark 64 is moved by the operation of the moving means so that the connection conducting portion 54 and the solder ball 48 are aligned. Since the relative positions of the connecting jigs 42U and 42D are detected in this way, the accuracy of alignment between the two can be improved.
[0094]
It can be applied to a so-called repair process in which the solder balls 48 are reattached to the IC 50 by applying the forms of the second fluorination processing unit 14 and the joining jigs 42U and 42D described above.
[0095]
FIG. 6A is an explanatory diagram showing a state of the IC 50 in which the solder ball 48 is missing from the connection conducting portion 54. As shown in the figure, after the solder ball 48 is joined to the connection conducting portion 54, the solder ball 48 may fall off the connection conducting portion 54 due to some factor such as vibration or impact (hatched portion in the figure). FIG. 6 (2) shows a form of the second fluorination treatment unit 14 that fluorinates only a single connection conducting portion 54 without interfering with the surrounding solder balls 48. As shown in the figure, the second fluorination processing unit 14 is constituted by a double tube of an inner tube 68 and an outer tube 70. Then, the groove position of the inner tube 68 is arranged in a step so as to be drawn from the groove position of the outer tube 70, and the diameter of the inner tube 68 is made to correspond to the diameter of the connecting conductive portion 54, and HF gas is discharged from the inner tube 68. Air supply is possible. By configuring the second fluorination processing unit 14 in this manner, even if several solder balls 48 are joined to the connection conducting unit 54, the repair target can be reliably treated without interfering with the solder balls 48. Thus, the fluorination treatment can be performed on the connection conductive portion 54 (to be rejoined). Further, since the HF gas is not touched except for the connection conducting portion 54 to be fluorinated, the amount of HF gas used can be reduced.
[0096]
FIG. 7 (1) shows the mode of the repair process, and FIG. 7 (2) shows the form of the joining jigs 42U and 42D used in the repair process. As shown in the figure, the hole mask 60 provided on the bonding jig 42D side is provided with one through hole 62 for holding the solder ball 48 at the center thereof, and the periphery of the through hole 62, that is, the hole mask 60. A clearance hole 72 for avoiding interference with the solder ball 48 is provided at a position facing the connection conducting portion 54 to which the solder ball 48 is joined. Further, the joining jig 42U can be moved in the plane direction with respect to the joining jig 42D by a moving means (not shown). For this reason, the solder ball 48 can be joined to the connecting conductive portion 54 by aligning the position of the missing portion of the solder ball 48 with the through hole 62 in the IC 50 and aligning the target connecting conductive portion 54 and the solder ball 48. Is possible. If two or more solder balls 48 are missing from the IC 50, the joining jig 42U is moved in a plane each time so that the solder balls 48 are joined one by one. As described above, the relief mask 72 is provided in the hole mask 60, and the connection masking portion 54 and the IC 50 are brought into close contact with each other at the time of bonding, so that it is possible to prevent a local force from being applied to the IC 50. Therefore, it is possible to prevent the IC 50 from being deviated from heating or the IC 50 from being deformed.
[0097]
As described above, the specific forms and functions of the bonding jigs 42U and 42D in the first fluorination processing unit 12, the second fluorination processing unit 14, and the bonding processing unit 16 have been shown. The solder ball 48 can be joined to the conductive portion 54, and thus a protruding electrode can be formed on the IC 50.
[0098]
The solder ball 48 is used as the protruding electrode because the IC 50 on which the protruding electrode is formed is attached to a substrate or the like by using a reflow process. If the IC 50 on which the protruding electrode is formed is bonded to the substrate side by the above method (fluorination treatment and bonding), the protruding electrode is not required to be the solder ball 48, for example, on the surface of the glass on which the wiring pattern is spread. In the case of forming a protruding electrode on the surface, a gold ball may be used to improve electrical characteristics, and the shape may be not only a spherical shape but also a various shape depending on the application such as a cylindrical shape. .
[0099]
In the above-described embodiment, the IC and the solder ball are used as the object for forming the protruding electrode. However, as another application example, it may be used for forming a bump in a bare chip. That is, conventionally, bump formation on a bare chip requires a large amount of masks and common electrodes. However, if this apparatus is applied, it is not necessary to route the pattern for forming the aforementioned mask or common electrode. For this reason, the protruding electrode can be easily formed on the bare chip.
[0100]
The bonding mechanism is considered as follows. The atoms of the surface portion that are bonded to the fluorine of the member to be bonded are disconnected from the fluorine by coming into contact with the other member to be bonded, and the bonding is performed by combining with the atoms of the other bonding member. Then, it is considered that the fluorine whose bond has been broken diffuses into the inside of the member to be bonded that easily takes in fluorine. In the above embodiment, the case where the fluorination treatment is performed using HF gas has been described. However, the fluorination treatment may be performed by applying hydrofluoric acid or immersing in hydrofluoric acid.
[0101]
In the embodiment described above, Ar gas is used as the inert gas. However, the inert gas may be a rare gas such as helium or neon or a nitrogen gas. Furthermore, although the case where the halogen is fluorine has been described in the above embodiment, the halogen may be chlorine, iodine, bromine, or the like depending on the compatibility and surface state of the partner to be bonded.
[0102]
Next, embodiments in which the above embodiment is further embodied and improved will be described. In this embodiment, a fluorination treatment section corresponding to the first fluorination treatment section 12 described in the previous embodiment is formed, and this fluorination treatment section is provided with a fluorination treatment chamber 180 shown in FIG. It has been. Further, a bonding processing unit corresponding to the bonding processing unit 16 described in the above embodiment is formed, and the bonding processing chamber 190 shown in FIGS. 10 and 11 is provided in this bonding processing unit. The second fluorination processing unit 14 of the above embodiment may or may not be provided.
[0103]
In this embodiment, as shown in FIG. 8 (1), solder balls 48, which are metal grains for electrical contacts, are accommodated one by one in a recess 80a formed on the surface of a joining jig 80 in advance. These are held in an arrangement corresponding to the arrangement of the connection conducting portions 54 formed in the IC 50 and introduced into the fluorination treatment chamber 180. Here, the joining jig 80 has a recess 80a formed by cutting on the surface of the plate-like member, and is configured by adhering the mask member in which a through hole is formed on the plate-like member as described above. Also good. The material of the joining jig 80 is preferably stainless steel, ceramic, aluminum nitride or the like from the viewpoints of halogen resistance, non-reactivity with solder, and the like. The depth of the recess 80 a is formed to be shallower than the outer diameter of the solder ball 48, and the solder ball 48 protrudes from the surface of the bonding jig 80 when the solder ball 48 is accommodated in the recess 80 a. Yes. In this embodiment, since the joining jig 80 is used as it is in the joining process described later, the depth of the concave portion 80a is set so that the solder ball 48 is sufficiently applied to the connecting conductive portion 54 of the IC 50 in the joining process described later. It is necessary to form the solder ball 48 to be somewhat shallower than the outer diameter of the solder ball 48 so that it can be bonded.
[0104]
Next, the inside of the fluorination treatment chamber 180 is replaced with an inert gas, and the pressure plate 81 is lowered from above the joining jig 80 and the solder ball 48 is added by the pressure plate 81 as shown in FIG. By pressing, the upper part of the solder ball 48 is flattened. In this case, since the solder ball 48 is pressurized by the pressure plate 81, the upper part is flattened to form a flat surface 48a as shown in FIG. In the case where the pressure treatment is performed as in the present embodiment, the flat surface 48a is formed, and at the same time, the lower portion in contact with the inner bottom surface of the recess 80a is also flattened to form the flat surface 48b.
[0105]
When the flat surface 48a is thus formed, the thickness (height) d of the solder ball 48 is reached. ₁ Is the height (= outer diameter) d of the original spherical solder ball 48 ₀ Smaller than. When a spherical metal particle is used as a conductive member like the solder ball 48, the thickness ratio d before and after the flattening process ₁ / D ₀ Is preferably in the range of 0.6 to 0.9, and particularly preferably in the range of 0.7 to 0.88. Below these ranges, the metal particles are too crushed, making subsequent bonding difficult, and the shape of the protruding electrode cannot be obtained. If it exceeds these ranges, the area of the flat surface formed by the planarization becomes small, and it becomes impossible to obtain effects such as improvement of the bonding state, reduction of variation in the bonding state, and reduction of bonding failure by the flattening treatment. Specifically, in the case of a solder ball having an outer diameter of 0.35 mm, the thickness after the planarization is about 0.3 mm, and in the case of a solder ball having an outer diameter of 0.76 mm, the thickness after the planarization is About 0.6 mm. In addition, since the joining jig 80 is used in the joining process as it is as described later, the depth d of the recess 80a. ₂ Is the thickness d of the solder ball 48 after the planarization treatment. ₁ Is even smaller. That is, even after the flattening process, the upper part of the solder ball 48 protrudes from the surface of the bonding jig 80 (opening edge of the recess 80a).
[0106]
As an advantage of the flattening treatment, the contact area is increased to improve the joining state and the joining strength is enhanced. In addition, the solder balls 48 arranged in a plurality as described above are collectively plastically deformed by a flat plate or the like. As an advantage in the case of flattening, since the flat surfaces 48a of the plurality of solder balls 48 have the same height and are arranged on the same plane, the applied pressure is evenly applied during the bonding process, and the bonded state Variation is reduced, and it is difficult for bonding failure to occur.
[0107]
Next, the flat surface 48a of the solder ball 48 that has been flattened as described above is subjected to a fluorination treatment as shown in FIG. This fluorination treatment is performed by introducing a gas in which hydrogen fluoride (HF) and water vapor are mixed as described above into the fluorination treatment chamber 180 and bringing this gas into contact with the flat surface 48a. Since the flat surface 48a is flattened by pressurization, the outer skin of the original solder ball is broken and the inside is exposed, whereby the halogenation reaction described above is promoted, and the treatment is performed more effectively. Also, since the flat surface 48b is formed, the solder ball 48 does not roll in the recess 80a from the time of fluorination to the time of bonding, so that the halogenated flat surface 48a is surely connected for later-described connection. There is also an advantage that the conductive portion comes into contact and is securely and strongly joined.
[0108]
In addition, as a planarization process, it can also carry out by removing the part which should become a joint surface of a metal grain and forming a flat surface other than the process by pressurization as mentioned above. Also in this case, since the formed flat surface is obtained by removing the outer skin of the metal grains, halogenation is promoted.
[0109]
In the case of solder balls, the above halogenation treatment can be performed, for example, at a processing time of 30 to 90 seconds, a fluoride concentration of 4400 ppm of hydrogen fluoride, and a solder ball surface temperature of 90 ° C. The treatment time is adjusted within the above range in consideration of the bonding conditions described later.
[0110]
FIG. 9 (2) shows another recess 80 b formed in the joining jig 80. A concave curved surface 80c that substantially matches the outer surface (spherical surface) of the solder ball 48 is formed on the inner bottom surface of the concave portion 80b, that is, without flattening the top shape of the protruding electrode formed by the solder ball 48, that is, Only the flat surface 48a can be formed without forming the flat surface 48b. Therefore, in this case, in addition to the effects such as an increase in the contact area with the connection conductive portion, acceleration of the halogenation reaction, prevention of solder ball rolling in the recess, the shape of the top of the bump electrode There is an advantage that the solder ball 48 can be formed without damaging the outer surface shape.
[0111]
FIGS. 9 (3) and 9 (4) show examples of metal particle shapes that can be used in place of the spherical metal particles such as the solder balls 48. What is shown in FIG. 9 (3) is a cylindrical metal particle, and what is shown in FIG. 9 (4) is a rectangular parallelepiped (or cubic) metal particle. By using metal particles having such a shape, the above-described flattening process becomes unnecessary.
[0112]
Next, a process for bonding the solder ball 48 having the halogenated surface as described above to the IC 50 will be described. This step is performed in the bonding processing chamber 190 shown in FIG. The bonding processing chamber 190 is filled with an inert gas such as nitrogen gas. As described above, the bonding jig 80 in which the solder balls 48 are arranged and held is attached to the holder 91 in the bonding processing chamber 190. The holder 91 is configured to be slidable along a guide rod 92 extending vertically, and is moved up and down by a driving device (not shown). A pressure head 93 that moves up and down by a driving mechanism (not shown) is disposed above the joining jig 80. A heater 94 is provided inside the pressure head 93. A holding part 95 configured by a vacuum suction means or the like is provided below the pressure head 93, and the IC 50 is held. The IC 50 is exactly the same as that described above, and the connection conductive portions 54 exposed on the lower surface thereof are provided in a state of being arranged in a grid pattern.
[0113]
A table 96 having a flat surface is disposed below the joining jig 80, and a heater 97 is provided inside the table 96. Further, a heat insulating plate 98 is disposed between the bonding jig 80 and the upper pressure head 93, and a heat insulating plate 99 is also disposed between the bonding jig 80 and the lower table 96. These heat insulating plates 98 and 99 are both movable in a substantially horizontal direction between the upper and lower shielding positions of the joining jig 80 and the retracted position shifted from the upper and lower positions of the joining jig 80 as shown in the figure. It is configured.
[0114]
In this joining processing unit, first, the heat insulating plates 98 and 99 are arranged at the upper and lower positions of the joining jig 80 as shown in the figure, and the pressure head 93 and the table 96 are heated in advance using the heaters 94 and 97. . When the solder ball 48 is used, the heating set temperature of the pressure head 93 is 100 to 180 ° C., and the heating set temperature of the table 96 is 0 to 180 ° C. At this time, the table 96 is set to perform auxiliary heating. However, both the pressure head 93 and the table 96 may be heated to the same extent, and the table 96 is used as a main heating means. The head 93 side may be used as auxiliary heating means. These heating set temperatures are set to temperatures lower than the melting points of the solder ball 48 to be joined and the connecting conductive portion 54 as described above. This is because the bonding mode of the present embodiment is solid bonding and can be bonded without melting the bonding interface.
[0115]
Further, in this state, the heat radiated from above and below can be blocked by the heat insulating plates 98 and 99, so that the surface of the solder ball 48 subjected to the halogenation treatment is heated to form the halogenated surface. It is possible to prevent the halogen from leaving or the surface state from changing to a state unsuitable for bonding due to an oxidation reaction or the like. Since the heat insulating plates 98 and 99 are heated by radiant heat, it is preferable to provide a liquid passage, an air passage, or the like inside to perform liquid cooling or air cooling. This is because particularly when the distance between the pressure head 93 or the table 96 and the joining jig 80 is shortened, the heat insulating plates 98 and 99 themselves are overheated to become a radiant heat source. On the other hand, if the distance is increased, the moving distance of the pressure head 93 and the joining jig 80 is increased, the accuracy of the moving mechanism is lowered, and the displacement in the joining surface direction is likely to occur. Therefore, it is preferable that the heat insulating plate can sufficiently block heat even as close as possible.
[0116]
Next, the upper heat insulating plate 98 is retracted as shown by the arrow (1) shown in the figure, and the pressure head 93 is lowered as shown by the arrow (2) shown in the figure to connect the connecting conductive portion 54 of the IC 50 to the solder ball 48. Make contact. Here, since the concave portions 80a of the joining jig 80 are arranged in a state corresponding to the arrangement state of the connection conducting portions 54 arranged in advance on the surface (the lower surface in the drawing) of the IC 50, the IC 50 is lowered. Each connection conducting portion 54 and the solder ball 48 are in contact with each other simply by making contact. The pressurizing head 93 may be configured to apply a certain amount of pressure to the joining jig 80 already at this time, and at this time, the pressure head 93 is not yet applied with sufficient pressure. Also good.
[0117]
Next, after the lower heat insulating plate 99 is retracted as shown by the arrow (3) in the figure, the holder 91 is lowered along the guide rod 92. Then, the lower surface of the joining jig 80 is brought into contact with the surface of the table 96, and the interface between the solder ball 48 and the connecting conductive portion 54 is indirectly heated by heat conduction. In this state, the solder ball 48 sandwiched between the upper and lower members and the connection conducting portion 54 are subjected to stable pressure and heating, and thus the joining of both proceeds. For example, when the solder ball 48 has an outer diameter of 0.35 mm, the applied pressure is 200 g / piece, and the time required for joining is 15 seconds or less.
[0118]
When the joining process is completed, the holder 91 rises and the pressure head 93 releases the IC 50 and retracts upward. Then, the heat insulating plates 98 and 99 are extended to block the radiant heat. Therefore, the process can be quickly completed without performing extra heating even after the bonding process.
[0119]
In this bonding processing method, heat can be applied collectively to a set of a large number of solder balls and connection conducting portions, and the heat source is controlled at a constant temperature, so that heating to the bonding interface is uniform. Can be ensured, and the joining state can be made uniform. As another heating method, it is possible to individually heat by irradiating a laser beam or the like, but this embodiment is superior from the viewpoint of ensuring the uniformity of the heating state.
[0120]
Note that at least the upper part (flat surface) of the halogenated solder ball 48 is not exposed to the atmosphere until the bonding process shown in FIG. 10 is performed after the halogenation process shown in FIG. Thus, it is preferable to hold in an inert gas. The time from the halogenation treatment to the bonding treatment is preferably as short as possible. For example, it is desirable to complete the bonding within 30 minutes after the halogenation treatment is completed. In this way, poor bonding can be significantly reduced. Incidentally, it has been confirmed that defective bonding is likely to occur when exposed to the atmosphere (in an atmosphere containing oxygen) between the halogenation process and the bonding process, or when a time exceeding 30 minutes elapses.
[0121]
Next, another bonding processing method will be described with reference to FIG. In this bonding processing method, an apparatus having basically the same structure as the bonding processing apparatus shown in FIG. 10 can be used, but the heating method in the bonding process is different. First, the heater 94 of the heating head 93 and the heater 97 of the table 96 are not initially supplied with power and do not generate heat. In this state, as shown by the arrow (1) in the figure, the pressure head 93 is lowered to bring the connecting conductive portion 54 into pressure contact with the solder ball 48 disposed on the joining jig 80. Further, as shown by the arrow (2), the pressure head 93 and the joining jig 80 are lowered integrally to bring the joining jig 80 into contact with the table 96 as well. In this state, the heaters 94 and 97 are energized to start heat generation.
[0122]
In this heating method (pulse heat method), unlike the above heating method (constant heat method), the halogenated surface (the surface of the solder ball 48 in the example of the present embodiment) that becomes the bonding interface is heated before bonding. Therefore, the bonding process can be performed without altering the halogenated surface. However, in this pulse heat method, a time lag occurs before the bonding interface is heated than in the constant heat method, so the cycle time may be longer, and in order to obtain a uniform heating temperature, it is more than the bonding treatment area. Larger heating means may be required.
[0123]
FIG. 12 (1) shows the temperature change between the control temperature of the heater and the workpiece (in this case, the bonding interface) by such a pulse heat type heating method. In this case, the heat generation time (pulse width) of the heater is determined by confirming empirically or by measurement that the workpiece temperature reaches the desired bonding temperature and is maintained for a required time. Before and after the bonding process, excessive heating is not applied to the bonding interface as shown in the figure. On the other hand, as shown in FIG. 12 (2), in the case of the constant heat method, the temperature before and after the joining process is sufficiently reduced because the workpiece is heated by being brought into contact with a heating medium heated to a predetermined temperature in advance. Requires heat transfer suppression means such as the above-mentioned heat insulating plate. Without such heat transfer suppression means, it becomes more difficult to suppress the temperature before and after the bonding process than the illustrated characteristics. In particular, if the halogenated surface is heated before the bonding treatment, the bonding state deteriorates even if the heating temperature is low, so that bonding defects may occur frequently.
[0124]
The above embodiments are merely examples for realizing the present invention, and the present invention is not limited to the illustrated examples, and various modifications can be made without changing the gist of the present invention.
[0125]
【The invention's effect】
Since this invention is comprised as mentioned above, there exists an effect as described below.
[0126]
According to the method for forming a protruding electrode according to claim 1, there is provided a method for forming a protruding electrode in which a conductive member is bonded to the surface of a connecting conductive portion provided in an electrical component, wherein the connecting conductive portion and the conductive member are connected. Since at least one surface of the conductive member is halogenated, this is brought into contact with the interface between the conductive portion for connection and the conductive member, and solid-bonded to form a protruding electrode on the electrical component. The two joining members can be joined without melting. For this reason, a flux can be made unnecessary and a cleaning process can be eliminated. Further, it is possible to eliminate the necessity of forming a mask or wiring pattern in order to form the protruding electrode.
[0127]
According to the protruding electrode forming apparatus of the eighth aspect, the halogenated portion is provided, and the halogenated portion for halogenating at least one surface of the conductive portion for connection and the conductive member provided in the electric component is provided. As described above, it is possible to eliminate the need for a flux and to eliminate the cleaning process as well. Can do. Further, it is possible to eliminate the necessity of forming a mask or wiring pattern in order to form the protruding electrode.
[0128]
Further, according to the protruding electrode forming component of claim 14, the protruding electrode forming component is obtained by bonding the conductive member to the connection conducting portion provided in the electric component, and at least one surface of the bonding electrode is halogenated. Since the height of the conductive member from the connecting conductive portion is uniform due to the close contact between the conductive member and the connecting conductive portion, and the pressurization required for the close contact, the formed component is, for example, a substrate When placed on the substrate, there is no gap between the conductive member and the substrate. For this reason, even if it inputs into a reflow process, it can prevent that a connection defect generate | occur | produces between an electroconductive member and a board | substrate etc., and can improve the reliability of formation component mounting.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing a configuration of a protruding electrode forming apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic view showing a specific structure (1) and (2) of the first fluorination treatment section 12;
FIG. 3 is a schematic view showing a specific structure (1) and (2) of a second fluorination treatment unit 14;
FIG. 4 is a schematic view showing specific modes (1), (2), and (3) of a joining process using joining jigs 42U and 42D.
FIGS. 5A and 5B are configuration diagrams (1) and (2) illustrating a configuration for aligning the connection jigs 42U and 42D. FIGS.
FIG. 6 is an explanatory diagram (1) showing a state of the IC 50 in which the solder ball 48 is missing from the connection conduction portion 54 and only a single connection conduction portion 54 without interfering with the surrounding solder balls 48; It is a block diagram (2) which shows the form of the 2nd fluorination process part 14 which performs a chemical conversion process.
FIG. 7 is an explanatory diagram (1) showing a state in which a repair process is performed, and an explanatory diagram (2) showing a form of joining jigs 42U and 42D used in the repair process.
FIGS. 8A and 8B are schematic explanatory views (1) to (3) schematically showing a method and an apparatus configuration of a planarization process and a halogenation process in another embodiment according to the present invention.
9 is an enlarged explanatory view (1) showing a deformation state of solder balls arranged in the joining jig shown in FIG. 8, an enlarged explanatory view (2) showing a structure of another joining jig, and another metal particle of FIG. It is an expansion perspective view (3) and (4) which show a shape.
FIG. 10 is a schematic configuration diagram showing a bonding processing method and a structure of a bonding processing apparatus according to another embodiment of the present invention.
FIG. 11 is a schematic configuration diagram illustrating a bonding processing method and a structure of a bonding apparatus according to still another embodiment of the present invention.
12 is a graph showing temporal changes in the heater temperature and the workpiece temperature by the heating method in the bonding processing method shown in FIGS. 10 and 11. FIG.
FIG. 13 is an explanatory cross-sectional view illustrating a configuration of an integrated circuit.
[Explanation of symbols]
1 Integrated circuits
2 chips
2A electrode
3 Gold wire
4 Land
5 resists
6 Solder balls
10. Projection electrode forming apparatus
12 First fluorination treatment section
14 Second fluorination treatment section
16 Bonding processing part
18 reaction chamber
20 Piping
22 Piping
24 HF gas supply unit
26 Steam generator
28 Solder ball storage
30 Magazine loader
32 chambers
34 Argon gas supply unit
36 tables
38 Retaining plate
40 Vertical cylinder
42U, D Joining jig
44 Heater
46 Magazine Unloader
48 Solder balls
50 IC
51 mold
52 Cover
54 Conducting part for connection
56 Exposed hole
58 Vacuum suction means
60 hole mask
62 Through hole
64 Placemark
66 CCD
68 inner tube
70 outer tube
72 Relief Hole
80 Joining jig
80a recess
91 Holder
92 Guide rod
93 Pressure head
94, 97 Heater
95 Gripping part
96 tables
180 Fluorination chamber
190 Bonding chamber

Claims (5)

Provided with a halogenation treatment portion for halogenating at least one surface of the connection conductive portion and the conductive member provided in the electrical component, and the connection conductive portion and the conductive member with the halogenated surface as an interface A protruding electrode forming apparatus provided with a bonding processing portion for closely attaching
The halogen treatment section is composed of a double pipe consisting of an inner pipe and an outer pipe, and the groove position of the inner pipe is arranged in a step so as to be drawn from the groove position of the outer pipe, and the diameter of the inner pipe is set. An apparatus for forming a protruding electrode, characterized in that a halogen gas can be supplied from the inner tube so as to correspond to the diameter of the connecting conductive portion.  The halogen processing section is constituted by a halogen gas supply chamber, and the halogen gas supply chamber is provided with an inlet and an outlet of the conductive member, and a slope is formed between the inlet and the outlet. The apparatus for forming a protruding electrode according to claim 1.  The halogen processing section is composed of a halogen gas supply chamber and a cover that can be put into the halogen gas supply chamber and can surround the electrical component, and the cover has an exposure hole corresponding to the connection conducting section. 2. The protruding electrode forming apparatus according to claim 1, wherein the connection conducting portion is in contact with an atmosphere of the halogen gas supply chamber.  The joining processing part is composed of a conductive member storage part and an electrical component pressing part provided above the conductive member storage part and capable of pressing the connection conductive part against the conductive member storage part, 4. The conductive member housing portion is provided with a recess corresponding to the connection conductive portion, and the recess depth is set so that the conductive member protrudes from the recess. The bump electrode forming apparatus according to any one of the above.  5. The protruding electrode forming apparatus according to claim 1, wherein the electrical component is a bare chip, and the conductive member to be in close contact with the connection conducting portion is for forming a bump in the bare chip. 6.

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